CN113846315B

CN113846315B - Spatially isolated atomic layer deposition apparatus

Info

Publication number: CN113846315B
Application number: CN202111135780.7A
Authority: CN
Inventors: 陈蓉; 聂煜峰; 杨帆; 李邹霜; 邓匡举
Original assignee: Huazhong University of Science and Technology
Current assignee: Huazhong University of Science and Technology
Priority date: 2021-09-27
Filing date: 2021-09-27
Publication date: 2022-08-02
Anticipated expiration: 2041-09-27
Also published as: CN113846315A; WO2023045022A1

Abstract

The invention relates to a space isolation atomic layer deposition device, comprising: a housing, the interior of which is hollow to form an air duct; the partition plate is positioned in the shell, a main air duct is positioned on one side of the partition plate in the air duct, a static pressure chamber is positioned on the other side of the partition plate in the air duct, a slit is formed at the partition plate, the main air duct is communicated with the static pressure chamber through the slit, the direction of air flowing in the length direction of the main air duct is taken as a first direction, and the slit comprises a plurality of sections along the first direction; the air inlet is arranged on the shell and communicated with the main air duct; the air outlet is arranged on the shell and communicated with the static pressure chamber, and extends along a first direction; in the area near the end along the first direction, the width of the slit in at least partial interval is larger than that of the slit in the next interval, so that the amount of gas flowing into the static pressure chamber through the slit in the main air duct in each interval is equal.

Description

Spatially isolated atomic layer deposition apparatus

Technical Field

The invention relates to the technical field of atomic layer deposition, in particular to a space isolation atomic layer deposition device.

Background

Atomic layer deposition is an ultra-thin film fabrication technique by which a substance can be deposited as a monoatomic film, layer-by-layer, onto a substrate surface. The thickness of a film formed in the atomic layer deposition process is very small, the film can reach a nanometer level, and the consistency is good, so that the film is widely applied to the fields of micro-nano electronic devices, solar cells and the like. In the related art, in some atomic layer deposition apparatuses, gas flowing in from a gas inlet is divided for a plurality of times to increase the number of gas nozzles and nozzles, so that the length that the gas nozzles can cover is increased, thereby realizing large-area deposition. However, this method can make the height of the device larger, and the structure of the internal flow channel is more complicated, so that the processing is higher and the cost is higher. In other atomic layer deposition apparatuses, deposition uniformity is poor, although the apparatus can be simplified.

Disclosure of Invention

Based on the above, the invention provides the space isolation atomic layer deposition device, which can realize large-area atomic layer deposition, has a small height, and has a simple flow channel structure inside, so that the processing difficulty and the processing cost are reduced, and in addition, the uniformity during deposition is good.

A spatially isolated atomic layer deposition apparatus, comprising:

a housing having an interior hollow to form an air duct;

the partition plate is positioned in the shell, a main air duct is positioned on one side of the partition plate in the air duct, a static pressure chamber is positioned on the other side of the partition plate in the air duct, a slit is formed in the partition plate, the main air duct is communicated with the static pressure chamber through the slit, the direction of gas flowing in the length direction of the main air duct is taken as a first direction, and the slit comprises a plurality of sections along the first direction;

the air inlet is arranged on the shell and communicated with the main air duct;

the air outlet is arranged on the shell and communicated with the static pressure chamber, and the air outlet extends along the first direction;

in the area close to the tail end along the first direction, the width of the slit in at least partial interval is larger than that of the slit in the next interval, so that the amount of the gas flowing into the static pressure chamber through the slit in the main air duct in each interval is equal.

In one embodiment, the width of the slit in each interval is greater than the width of the slit in the next interval along the first direction.

In one embodiment, the width of the slit is gradually reduced along the first direction.

In one embodiment, the partition plate is provided with a plurality of first baffle plates extending into the static pressure chamber, and the height of the first baffle plate extending in each interval is greater than the height of the first baffle plate extending in the next interval along the first direction.

In one embodiment, the first baffle extends to a height gradually decreasing along the first direction.

In one embodiment, a plurality of second baffles extending into the main air duct are arranged on the inner wall of the casing, and the extending height of the second baffle in each section is greater than the extending height of the second baffle in the next section along the first direction.

In one embodiment, the height of the second baffle plate protruding in the first direction is gradually reduced.

In one embodiment, at least one side of the partition has a gap with an inner wall of the housing to form the slit.

In one embodiment, both sides of the partition board are connected with the inner wall of the shell, and the slit is arranged in the center area of the partition board along the width direction.

In one embodiment, along the first direction, the plurality of intervals are divided into a first interval and a second interval which are sequentially arranged, the width of the slit in each interval in the range of the first interval is smaller than that of the slit in the next interval, and the width of the slit in each interval in the range of the second interval is larger than that of the slit in the next interval.

Above-mentioned atomic layer deposition device is kept apart in space, be formed with the wind channel in the inside of casing, the wind channel is divided into main wind channel and static pressure room two parts by the baffle in the casing, through the slit intercommunication that forms in baffle department between main wind channel and the static pressure room, gaseous can follow the air inlet and get into main wind channel, on one side along the first direction towards main wind channel terminal flow, on one side through slit department towards the static pressure room flow, gaseous process buffering and the balance in the static pressure room, after the volume distribution of the gaseous of each region is more even on the first direction, finally flow from the gas outlet. The static pressure at the slits is gradually increased near the tail end region in the first direction, the larger the static pressure is, the more beneficial the flow rate of the gas flowing into the static pressure chamber at the slits is to be increased, the width of the slits in at least part of the regions near the tail end in the first direction is larger than the width of the slits in the next region, namely, in the regions near the tail end, the width of the slits in the regions near the tail end is smaller, and the width of the slits in the regions far from the tail end is larger, so that after the arrangement, the flow rate of the gas flowing into the static pressure chamber through the slits in the regions near the tail end is larger in the regions far from the tail end, and the flow rate of the gas flowing into the static pressure chamber through the slits in the regions near the tail end is smaller, thereby compensating the flow rate difference caused by the different static pressures, improving the uniformity of the flow rate at the slits in the regions along the first direction, and ensuring that the amount of the gas flowing into the regions corresponding to the regions in the static pressure chamber is more uniform, so that the outflow in the areas of the air outlet is more uniform, and correspondingly, the deposition uniformity is better. In addition, because the air outlet extends along the first direction, the air outlet can be formed by connecting a plurality of air outlets arranged at intervals along the first direction into a whole, and a large deposition area can be obtained without carrying out multiple shunting in the height direction as long as the length is enough. In addition, because the air inlet and the air outlet do not need to be shunted for multiple times in the height direction, the height difference between the air inlet and the air outlet is smaller, the occupied space of the device in the height direction is smaller, the structure of the internal flow channel is relatively simple without the need of multiple shunting, and the processing difficulty and the processing cost are reduced.

Drawings

FIG. 1 is a schematic diagram illustrating an overall structure of a spatially-isolated atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 2 is a schematic diagram of the internal structure of the spaced-apart ALD apparatus of FIG. 1;

FIG. 3 is a schematic diagram of the internal structure of the spaced-apart atomic layer deposition apparatus shown in FIG. 1 from a front view (with parts omitted);

FIG. 4 is a cross-sectional view of the spaced-apart atomic layer deposition apparatus of FIG. 1;

FIG. 5 is a schematic diagram illustrating an internal structure of a spatially-isolated atomic layer deposition apparatus according to another embodiment.

Reference numerals:

the shell 100, the main body part 110, the air inlet 111, the air outlet 112, the notch 113 and the side plate 120;

a partition board 200;

a main air duct 310, a static pressure chamber 320;

a slit 400;

a first baffle 500;

and a second barrier 600.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

Referring to fig. 1 to 4, the spatially-isolated atomic layer deposition apparatus according to an embodiment of the present invention includes a housing 100 and a partition 200, wherein the housing 100 is hollow to form an air channel for flowing gas. The partition 200 is located in the housing 100 and divides the air duct into two parts, wherein a main air duct 310 is located on one side of the partition 200, and a static pressure chamber 320 is located on the other side of the partition 200. A slit 400 is formed at the partition 200, and the main duct 310 communicates with the static pressure chamber 320 through the slit 400. The air inlet 111 and the air outlet 112 are both disposed on the housing 100, and the air inlet 111 is communicated with the main air duct 310, and the air outlet 112 is communicated with the static pressure chamber 320. After flowing into the main air duct 310 from the air inlet 111, the gas flows downward along the height direction while flowing toward the end along the length direction, and flows into the static pressure chamber 320 through the slit 400, and after buffering and balancing in the static pressure chamber 320, the gas is ejected onto the substrate from the air outlet 112 to realize atomic layer deposition. For convenience of description, the air outlet 112 extends in a first direction, taking as the first direction a direction in which air flows in the length direction of the main duct 310. In the first direction, the slits 400 may be divided into a plurality of sections, and in the region near the end in the first direction, the width of the slits 400 in at least some sections is greater than the width of the slits 400 in the next section, so that the amount of gas flowing from the main duct 310 into the static pressure chamber 320 through the slits 400 in each section is equal.

The static pressure at the slits 400 increases gradually in the area near the tip in the first direction, and the greater the static pressure, the more advantageous the flow rate of the gas flowing into the static pressure chamber 320 through the slits 400 in the main duct 310 increases. The slits 400 in at least some of the regions near the end in the first direction have a width larger than the width of the slits 400 in the next region, that is, in the region near the end, the slits 400 in the regions closer to the end have a smaller width, and the slits 400 in the regions farther from the end have a larger width, so that in the region near the end, the gas in the regions farther from the end flows into the static pressure chamber 320 through the slits 400 at a higher flow rate, and the gas in the regions closer to the end flows into the static pressure chamber 320 through the slits 400 at a lower flow rate, so that the difference in flow rate due to the difference in static pressure can be increased, thereby increasing the uniformity of the flow rate at the slits 400 in the regions along the first direction, making the gas flow in the regions corresponding to the regions in the static pressure chamber 320 more uniform, and making the outflow rate in the regions of the gas outlet 112 more uniform, accordingly, the uniformity of deposition is better. In addition, since the air outlet 112 extends along the first direction, the air outlet 112 may be formed by connecting a plurality of air outlets spaced along the first direction into a single body, and a large deposition area may be obtained without performing multiple flow distribution in the height direction as long as the length is sufficient. Because the flow is not required to be split for multiple times in the height direction, the height difference between the air inlet 111 and the air outlet 112 can be smaller, the occupied space of the device in the height direction is smaller, the structure of the internal flow channel can be relatively simple without multiple times of flow splitting, and the processing difficulty and the processing cost are reduced.

Referring to fig. 1 to 4, the direction opposite to the first direction is the x direction, and the flow rate q of the gas flowing into the slit 400 is obtained by the related formula _(x) The calculation is made by the following formula:

in the above formula: q. q.s _(x) Is the outflow at slit 400;

μ is an outflow coefficient, which can be regarded as a constant;

δ is the width of the slit 400;

P _(x)j is the static pressure thereat;

ρ is the gas density.

In the above formula: λ is an air duct resistance coefficient, which can be regarded as a constant;

d is the equivalent diameter of the main air duct 310, and the calculation formula is

P _(x＝0)j For the static pressure at the end of the main duct 310,

(i.e., the dynamic pressure at the end is 0 and the static pressure is equal to full pressure);

l is the length of the main duct 310;

v is the gas flow rate of the gas inlet 111.

As can be seen from equation (1), the flow rate at the slit 400 in each section is related to the static pressure and the slit width at that position. As can be seen from equation (2), the static pressure at each location is related to the value of x, i.e., the interval between the inlet 111 and the section in the first direction, the static pressure is a cubic function of x, and since the coefficient of the cubic term of the cubic function is greater than 0, the static pressure has a maximum value and a minimum value. Taking the derivative of equation (2) and making it equal to 0, the maximum position X1 and the minimum position X2 can be derived.

As can be seen from equation (3), the maximum is located at the end of the first direction, and if the minimum position X2 is greater than or equal to the length L of the main duct 310, the static pressure gradually increases in the first direction; if the minimum position X2 is less than the length L of the primary air chute 310, the static pressure decreases and then increases in the first direction. The analysis is performed in the following embodiment taking the first case (the minimum position X2 is greater than the length L of the main duct 310) as an example.

As described above, if the flow rates into the static pressure chamber 320 in the respective sections in the first direction are made equal, the flow rates out of the air outlets 112 can be made more uniform. As can be seen from the formula (1), the width of the slit 400 can be adjusted to equalize the flow rates of the gas flowing into the slit 400 in each section. Specifically, if the static pressure in a certain section is large, the width of the slit 400 in the section may be made slightly smaller; if the static pressure in a certain section is small, the width of the slit 400 in the section may be made slightly larger so that the flow rates at the slit 400 in the respective sections are made as equal as possible.

In the first case, the static pressure is gradually increased along the first direction, so in some embodiments, the width of the slits 400 in each section may be made larger than the width of the slits 400 in the next section along the first direction, i.e., the width of the slits 400 in each section is gradually decreased to adapt the static pressure magnitude in each section to make the flow rate at the slits 400 in each section as equal as possible. In the present embodiment, the width of the slit 400 in each section is not limited.

Specifically, in some embodiments, the width of the slits 400 within each zone may be equal. Can select a certain X ₀ Taking the position as a reference, and taking X at the position as a reference ₀ Substituting the value into the formula (2), calculating the static pressure value of the position, and dividing the interval of the position by the certain range of the fluctuation of the calculated static pressure value. For example by mixingThe static pressure value fluctuates up and down by 50 percent, namely the static pressure value of 0.5 time and 1.5 times is calculated, then the obtained static pressure value of 0.5 time and 1.5 times is substituted into the formula (2), and two X values X when the two static pressure values are taken are reversely calculated ₃ And X ₄ ，X ₃ And X ₄ Defining an interval within which the static pressure values of the various zones can be approximately considered as X ₀ At a static pressure value, i.e. X ₀ The value of the static pressure at (b) is taken as the average value of the static pressure in the interval. The division is performed for a plurality of times according to the method, namely, the whole length direction can be divided into a plurality of intervals.

Preferably, in some embodiments, the width of the slit 400 gradually decreases along the first direction. In this case, each cross section in the first direction is equivalent to one interval, that is, the interval in the previous embodiment is set to be infinitely small. In this embodiment, the width of the slit 400 is continuously changed in the first direction, so that the static pressure value at each position in the first direction can be better adapted, and the deposition uniformity at each position is better.

Referring to fig. 1 to 2, in particular, in some embodiments, the housing 100 includes a main body portion 110 and a side plate 120, a notch 113 is formed on one side of the main body portion 110, the side plate 120 is installed at the notch 113, and the side plate 120 is fixedly connected to the main body portion 110. For example, the side panel 120 and the main body 110 may be connected by a threaded fastener, or both may be snap-fit.

Referring to fig. 2 and 3, in some embodiments, at least one side of the partition 200 has a gap with an inner wall of the housing 100 to form a slit 400. Specifically, in some embodiments, the sidewall of one side of the partition board 200 is fixedly connected to the inner wall of the main body 110, and a gap, namely the slit 400, is formed between the sidewall of the other side of the partition board 200 and the side plate 120. Or, in some embodiments, two ends of the partition plate 200 are respectively and fixedly connected with corresponding positions on the inner wall of the main body portion 110, a gap is formed between the side wall of one side of the partition plate 200 and the side plate 120, a gap is formed between the side wall of the other side of the partition plate 200 and the inner wall of the main body portion 110 to form two slits 400, and the air in the main air duct 310 can flow downwards into the static pressure chamber 320 from the two slits 400, so that static pressure in the static pressure chamber 320 is balanced. When two slits 400 are provided, the distribution of the gas in the static pressure chamber 320 in the width direction is more uniform.

In the above embodiments, the slit 400 is formed between the partition board 200 and the case 100. In other embodiments, the slit 400 may also be disposed on the partition board 200. Specifically, in some embodiments, both sides of the partition board 200 are connected to the inner wall of the case 100, and the partition board 200 is provided with a slit 400 at a central region in the width direction. Therefore, the gas can flow downward into the static pressure chamber 320 from the widthwise central region of the partition plate 200. The arrangement can ensure that the gas flowing into the static pressure chamber 320 is distributed more uniformly in the width direction, the gas flow is more stable, and the vortex is not easy to form at the joint of the partition plate 200 and the shell 100. Alternatively, in some embodiments, the slots 400 may be discontinuous, for example, a plurality of holes may be provided in the partition 200 at intervals along the first direction, and the gas may flow downward from the holes into the corresponding positions of the static pressure chamber 320.

Preferably, in some embodiments, the partition 200 is removably connected to the housing 100. Thus, in use, the appropriate spacer 200 may be replaced as required. Specifically, the partition board 200 may be connected to the inner wall of the main body 110 by a snap, for example, a slot is formed on the inner wall of the main body 110, and the partition board 200 is directly snapped into the slot.

Referring to fig. 2 to 5, in some embodiments, the partition 200 is provided with a plurality of first baffles 500 extending into the static pressure chamber 320, and the height of the first baffles 500 extending in each interval is greater than the height of the first baffles 500 extending in the next interval along the first direction. Specifically, the first baffle 500 extends downwardly from the bottom surface of the partition 200 into the static pressure chamber 320. By providing the first baffle 500, the gas entering the static pressure chamber 320 can be blocked and collided, so that excessive gas is prevented from being collected at the tail end of the static pressure chamber 320, when the gas collides with the first baffle 500, the dynamic pressure speed and the dynamic pressure of the gas are both reduced, the static pressure speed and the static pressure speed are gradually increased, and the larger the extending height of the first baffle 500 is, the higher the collision probability is, and the larger the static pressure increase degree is. As previously mentioned, in the first case, the static pressure gradually increases in the first direction. In this embodiment, the height of the first baffle 500 extending out of each section is gradually reduced, which is beneficial to increase the static pressure of the section with smaller static pressure, so as to make the gas amount in each section in the static pressure chamber 320 as uniform as possible.

Preferably, in some embodiments, the height of the first barrier 500 that protrudes gradually decreases along the first direction. In this embodiment, the height of the first baffle 500 can be continuously changed in the first direction, so as to better adapt the static pressure value of each region in the static pressure chamber 320 in the first direction, and make the gas amount in each position as uniform as possible.

Referring to fig. 2 to 5, in some embodiments, a plurality of second baffles 600 extending into the main duct 310 are disposed on an inner wall of the casing 100, and the second baffles 600 in each section extend to a greater height than the second baffles 600 in the next section along the first direction. Specifically, the second baffle 600 extends downward into the main duct 310 from the inner wall of the main body 110. Through setting up second baffle 600, can block and collide the gas that gets into in the main wind channel 310 from air inlet 111 to the excessive terminal that gathers in main wind channel 310 of gas is avoided, and when gas collided second baffle 600, its dynamic pressure speed and dynamic pressure all reduced, and static pressure speed increase gradually, and the second baffle 600 stretches out the height more, and the probability of collision is higher, and the degree that the static pressure increases is bigger. As previously mentioned, in the first case, the static pressure gradually increases in the first direction. In this embodiment, the extending height of the second baffle 600 in each section is gradually reduced, which is beneficial to increase the static pressure of the original section with smaller static pressure, so that the gas amount in each section in the main air duct 310 is as uniform as possible.

Preferably, in some embodiments, the height of the second barrier 600 protruding is gradually reduced along the first direction. In this embodiment, the extending height of the second baffle 600 continuously changes in the first direction, so that the static pressure values of the regions in the main air duct 310 in the first direction can be better adapted, the air distribution at each position is more uniform, and the air volume in each region of the slit 400 in the first direction is as uniform as possible.

In the second case, the static pressure is first decreased and then increased in the first direction. Therefore, in some embodiments, along the first direction, the plurality of intervals are divided into a first interval and a second interval, which are sequentially arranged, in the first interval, the width of the slit 400 in each interval is smaller than the width of the slit 400 in the next interval, in the second interval, the width of the slit 400 in each interval is larger than the width of the slit 400 in the next interval. Specifically, in the first class of section, the widths of the slits 400 of the plurality of sections are gradually increased, and in the second class of section, the widths of the slits 400 of the plurality of sections are gradually decreased, that is, the widths of the slits 400 of the plurality of sections are first increased and then decreased.

As described above, if the flow rates into the static pressure chamber 320 in the respective sections in the first direction are made equal, the flow rates out of the air outlets 112 can be made more uniform. As can be seen from the formula (1), the width of the slit 400 can be adjusted to equalize the flow rates of the gas flowing into the slit 400 in each section. Specifically, if the static pressure in a certain section is large, the width of the slit 400 in the section may be made slightly smaller; if the static pressure in a certain section is small, the width of the slit 400 in the section may be slightly increased, so that the flow rate at the slit 400 in each section may be as uniform as possible. In this embodiment, the widths of the slits 400 in the plurality of sections are increased and then decreased, and may be adapted to the case where the static pressure is decreased and then increased, so that the flow rates at the slits 400 in the respective sections are as uniform as possible.

In the second case, the first baffle 500, the second baffle 600, and other components may also be provided to assist in improving deposition uniformity with reference to the various embodiments of the first case. The first embodiment can be referred to for the arrangement of the slits 400. The interval can be selected according to the embodiments of the first case.

The foregoing embodiments show the trend of the size change of the slit 400, the first barrier 500, the second barrier 600, and the like. In manufacturing the device, the individual components may be designed and manufactured according to the various embodiments described above. On the basis, the scheme can be further refined. For example, after the entire apparatus is divided into a plurality of sections in the above-described manner, the ratio of the average static pressure values corresponding to the plurality of sections may be obtained. As can be seen from the formula (1), in order to equalize the flow rates at the slits 400, the square of the static pressure value is inversely proportional to the width of the slits 400. The width ratio of the slits 400 in the sections can be obtained according to the obtained ratio of the average static pressure values corresponding to the sections, so that the width of the slits 400 can be designed according to the ratio. In addition, after the components are arranged according to the previous embodiments, fine adjustment can be performed according to simulation results, so that the deposition uniformity is better. In addition, in some embodiments, double-side intake or intermediate intake may also be used. In both cases, the settings of the respective components are finely adjusted based on the simulation results on the basis of the foregoing embodiments of the one-side intake.

One set of specific examples is provided below:

the main air duct 310 has a length of 200mm, a width of 10mm, a height of 20mm, an air inlet speed V of 2.3m/s, and X is calculated ₂ Approximately equal to 62mm, so the minimum value of the static pressure is that X is 62mm, and the minimum value can be divided into five sections, namely 200mm-160mm, 160mm-120mm, 120mm-80mm, 80mm-40mm and 40mm-0mm, and the slit width is 1mm, 1.5mm, 2mm, 2.5mm and 1.5mm respectively.

All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. Spatially isolated atomic layer deposition apparatus, comprising:

a housing having an interior hollow to form an air duct;

the air inlet is arranged on the shell and communicated with the main air duct;

2. The spatially isolated atomic layer deposition apparatus of claim 1, wherein a width of the slit in each interval is greater than a width of the slit in a next interval along the first direction.

3. The spatially isolated atomic layer deposition apparatus of claim 2, wherein a width of the slit is tapered along the first direction.

4. The spatially separated atomic layer deposition apparatus according to claim 3, wherein the partition is provided with a plurality of first baffles extending into the static pressure chamber, and wherein the first baffles extend over a greater height in each interval than in a next interval in the first direction.

5. The spatially isolated atomic layer deposition apparatus of claim 4, wherein a height of the first baffle plate that protrudes decreases gradually along the first direction.

6. The atomic layer deposition apparatus according to claim 1, wherein the inner wall of the housing has a plurality of second baffles extending into the main air duct, and the second baffles extend along the first direction to a greater extent in each interval than in the next interval.

7. The spatially separated atomic layer deposition apparatus according to claim 6, wherein a height of the second baffle plate protruding in the first direction is gradually reduced.

8. The spatially isolated atomic layer deposition apparatus of claim 1, wherein at least one side of the barrier has a gap with an inner wall of the housing to form the slit.

9. The spatially isolated atomic layer deposition apparatus according to claim 1, wherein both sides of the barrier are connected to an inner wall of the housing, and the slit is provided in a central region of the barrier in a width direction.

10. The apparatus according to claim 1, wherein along the first direction, the plurality of intervals are divided into a first interval and a second interval which are sequentially arranged, the width of the slit in each interval is smaller than that of the slit in the next interval in the range of the first interval, and the width of the slit in each interval is larger than that of the slit in the next interval in the range of the second interval.