CN113814887A - Chemical mechanical polishing equipment and method - Google Patents
Chemical mechanical polishing equipment and method Download PDFInfo
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- CN113814887A CN113814887A CN202111240802.6A CN202111240802A CN113814887A CN 113814887 A CN113814887 A CN 113814887A CN 202111240802 A CN202111240802 A CN 202111240802A CN 113814887 A CN113814887 A CN 113814887A
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- 238000005498 polishing Methods 0.000 title claims abstract description 118
- 239000000126 substance Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 230000003472 neutralizing effect Effects 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 30
- 230000001678 irradiating effect Effects 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 230000003068 static effect Effects 0.000 abstract description 16
- 230000005611 electricity Effects 0.000 abstract description 14
- 238000007517 polishing process Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000006386 neutralization reaction Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000007788 liquid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/06—Carrying-off electrostatic charges by means of ionising radiation
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application provides a chemical mechanical polishing device and a chemical mechanical polishing method, which comprises a bearing table, a polishing pad and an ultraviolet light emitting device, wherein the bearing table is used for placing a substrate to be polished, the substrate to be polished comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer, the polishing pad polishes the substrate to be polished, friction charges can be generated in the polishing process, after the substrate to be polished is polished, an area which is polished is irradiated by ultraviolet light emitted by the ultraviolet light emitting device, the ultraviolet light can ionize gas around the substrate to be polished and generate neutralization charges, and the neutralization charges can neutralize the generated friction charges, so that static electricity generated in the process of performing contact polishing on a sample to be polished by the polishing pad is weakened or even eliminated, the probability of electrostatic breakdown of the BOX film layer in the substrate to be polished is reduced, and the performance of a finally manufactured and formed semiconductor device is improved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to chemical mechanical polishing equipment and a chemical mechanical polishing method.
Background
In a semiconductor manufacturing process, a grinding process for a semiconductor film layer is often involved in order to obtain a relatively flat film layer. An apparatus frequently used in the Polishing process is a Chemical Mechanical Polishing (CMP) apparatus, and a Polishing pad in the CMP apparatus is used to perform contact Polishing with a sample to be polished.
However, during the contact polishing of the sample to be polished by the polishing pad, static electricity due to friction exists, and the static electricity can break down the film layer in the sample to be polished, resulting in the performance degradation of the finally manufactured semiconductor device.
Disclosure of Invention
In view of the above, the present disclosure provides a chemical mechanical polishing apparatus and a method thereof, which can reduce or eliminate static electricity generated during the contact polishing process of a sample to be polished by a polishing pad.
The embodiment of the application provides a chemical mechanical polishing equipment, includes: the polishing device comprises a polishing pad, a bearing table and an ultraviolet light emitting device;
the bearing table is used for placing a substrate to be ground, and the substrate to be ground comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer at least covering part of the BOX layer;
the grinding pad is used for grinding the substrate to be ground;
the ultraviolet light emitting device is used for emitting ultraviolet light to irradiate the substrate to be ground, the ultraviolet light ionizes gas around the substrate to be ground and generates neutralizing charges, and the neutralizing charges are used for neutralizing friction charges generated by the grinding pad and the substrate to be ground in the grinding process.
Optionally, the substrate to be ground comprises a first region and a second region;
the polishing pad is used for polishing the first area and the second area;
the ultraviolet light emitting device is used for irradiating the first area and the second area by using emitted ultraviolet light after the first area and the second area are both ground.
Optionally, the substrate to be ground comprises a first region and a second region;
the ultraviolet light emitting device is used for irradiating the first area by using the emitted ultraviolet light after the first area is ground;
the polishing pad is used for polishing the second area when the ultraviolet light emitting device irradiates the first area.
Optionally, the substrate to be ground comprises a first region and a second region;
the ultraviolet light emitting device is used for irradiating the first area by using the emitted ultraviolet light after the first area is ground;
the grinding pad is used for grinding the second area after the ultraviolet light emitting device irradiates the first area.
Optionally, the method further comprises: a gas conduit;
the gas pipeline is used for conveying neutralizing gas to the periphery of the substrate to be ground, and the neutralizing gas is used for being ionized by the ultraviolet light and generating neutralizing charges.
Optionally, the neutralizing gas is at least one of nitrogen, argon, and carbon dioxide.
Optionally, the flow rate of the neutralizing gas ranges from 500-.
Optionally, the method further comprises: a grinding disk;
the grinding disc is fixedly connected with the grinding pad and is positioned above the grinding pad;
the ultraviolet light emitting device is fixedly connected with the grinding disc, and the ultraviolet light emitting device is adjacent to the grinding pad.
Optionally, the light intensity range of the ultraviolet light emitting device is 100-2000mW/cm2And the time range of irradiating the substrate to be ground is 2-10 min.
An embodiment of the present application provides a chemical mechanical polishing method, which uses the chemical mechanical polishing apparatus in any one of the above embodiments, including:
grinding a substrate to be ground, wherein the substrate to be ground comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer at least covering a part of the BOX layer;
and irradiating the ground area of the substrate to be ground with ultraviolet light to ionize gas around the substrate to be ground by using the ultraviolet light and generate neutralizing charges, wherein the neutralizing charges are used for neutralizing friction charges generated in the grinding process.
The embodiment of the application provides chemical mechanical polishing equipment, including the plummer, grinding pad and ultraviolet emitter, the plummer is used for placing the substrate of treating to grind, including buried oxide BOX layer and silicon on insulator SOI layer in the substrate of treating to grind, the grinding pad is treated the grinding of grinding substrate, can produce friction charge in grinding process, after the substrate of treating to grind, utilize the ultraviolet irradiation of ultraviolet emitter transmission to irradiate the region after having ground, the ultraviolet can ionize the gas and produce neutralization charge that lie in treating to grind the substrate periphery, neutralization charge can neutralize the friction charge that produces, thereby weaken or even eliminate the grinding pad and treat the grinding sample and carry out the static that the contact grinding in-process produced, reduce the probability that the rete is broken down by the static in the substrate of treating to grind, improve the performance of the semiconductor device that final manufacturing formed.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram illustrating a chemical mechanical polishing apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a substrate to be polished according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating another exemplary chemical mechanical polishing apparatus according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of another chemical mechanical polishing apparatus provided in an embodiment of the present application;
fig. 5 is a flow chart illustrating a chemical mechanical polishing method according to an embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
The present application will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
In semiconductor manufacturing processes, especially in semiconductor devices based On Silicon-On-Insulator (SOI) substrates, such as Fully Depleted Silicon-On-Insulator (FD-SOI), the requirements for the smoothness and flatness of the surface of the SOI layer are high, and therefore, the surface of the SOI layer needs to be polished to improve the smoothness and flatness of the surface of the SOI layer.
The Polishing process of the surface of the SOI layer may be performed by using a Chemical Mechanical Polishing (CMP) apparatus, and the contact Polishing may be performed by using a Polishing pad in the CMP apparatus and a sample to be polished. When the sample to be polished is a semiconductor device based on an SOI substrate, static electricity due to friction may exist during contact polishing of the semiconductor device based on the SOI substrate by the polishing pad, and the static electricity may break down a film layer in the sample to be polished, resulting in a reduction in the performance of the finally manufactured semiconductor device.
Based on the above, the embodiment of the application provides a chemical mechanical polishing device, which comprises a bearing table, a polishing pad and an ultraviolet light emitting device, wherein the bearing table is used for placing a substrate to be polished, the substrate to be polished comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer, the polishing pad is used for polishing the substrate to be polished, after the substrate to be ground is ground, the ground area is irradiated by ultraviolet light emitted by an ultraviolet light emitting device, the ultraviolet light can ionize gas around the substrate to be ground and generate neutralizing charges, the neutralizing charges can neutralize the generated frictional charges, therefore, static electricity generated in the process of contact grinding of the grinding pad on the substrate to be ground is weakened or even eliminated, the probability of electrostatic breakdown of the BOX film layer in the substrate to be ground is reduced, and the performance of the finally manufactured semiconductor device is improved.
For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a schematic structural diagram of a chemical mechanical polishing apparatus according to an embodiment of the present disclosure is shown. The chemical mechanical polishing apparatus 100 according to the embodiment of the present disclosure includes a polishing pad 110, a carrier 120, and an ultraviolet light emitting device 130.
The carrier 120 is used for placing the substrate 140 to be polished, the carrier 120 can be located below the polishing pad 110, the polishing pad 110 is used for polishing the substrate 140 to be polished, the polishing pad 110 is located above the carrier 120, and the polishing pad 110 can rotate, so that when the substrate 140 to be polished and the polishing pad 110 are in contact, friction is generated to polish the substrate 140 to be polished. The carrier 120 can also be driven to rotate by external force, the carrier 120 drives the substrate 140 to be ground to rotate, and the rotation directions of the carrier 120 and the grinding pad 110 are opposite, so that the substrate 140 to be ground and the grinding pad 110 move relatively, and the grinding speed of the substrate 140 to be ground is increased.
In an embodiment of the present application, the substrate to be ground 140 may be a semiconductor substrate, such as an SOI substrate. The substrate to be ground 140 includes at least a buried oxide BOX layer 141 and a silicon-on-insulator SOI layer 142 covering at least a portion of the BOX layer 141. Referring to fig. 2, the substrate to be ground 140 may further include a silicon layer 143, and the silicon layer 143 is covered with a buried oxide BOX layer 141. Because the flatness and smoothness of the surface of the SOI layer 142 need to be improved, a silicon oxide material may be deposited on the substrate 140 to be polished to form a silicon oxide layer 144 covering the SOI layer 142 and the BOX layer 141, then the amorphous silicon layer 145 may be deposited on the silicon oxide layer 144, and then the amorphous silicon layer 145 and the silicon oxide layer 144 may be removed by chemical mechanical polishing, so as to obtain the SOI layer 142 with higher surface flatness. That is, it is necessary to polish the amorphous silicon layer 145 and the silicon oxide layer 144 with the polishing pad 110.
During the contact polishing of the substrate to be polished 140 by the polishing pad 110, there may be static electricity due to friction, which may break down the BOX layer 141 in the substrate to be polished 140, resulting in a reduction in the performance of the finally manufactured semiconductor device. At this time, the substrate 140 to be polished can be irradiated by ultraviolet light emitted by the ultraviolet light emitting device 130, the ultraviolet light can ionize gas around the substrate 140 to be polished and generate neutralizing charges, and the neutralizing charges can neutralize friction charges generated during the polishing process of the polishing pad 110 and the substrate 140 to be polished, so that static electricity generated during the contact polishing process of the polishing pad 110 on the substrate 140 to be polished is reduced or even eliminated, the probability of electrostatic breakdown of the BOX layer 141 in the substrate 140 to be polished is reduced, and the performance of a finally manufactured and formed semiconductor device is improved.
Specifically, the ultraviolet light emitting device 130 may be an ultraviolet lamp or an ultraviolet laser, and the wavelength range of the ultraviolet light may be 100 nm and 300 nm.
When the substrate 140 to be polished is irradiated by the ultraviolet light emitting device 130, there are three possible implementations:
the first realization mode is as follows: the substrate to be polished 140 includes a first region and a second region, and the polishing pad 110 can polish the first region and the second region in a fixed order, and after the first region and the second region are both polished, the ultraviolet light emitting device 130 irradiates the first region and the second region with the emitted ultraviolet light. That is, after the polishing pad 110 finishes polishing all the regions of the substrate 140 to be polished, the ultraviolet light emitting device 130 is used to irradiate the substrate 140 to be polished.
The second implementation manner is as follows: the substrate to be polished 140 includes a first region and a second region, the ultraviolet light emitting device 130 can irradiate the first region with the emitted ultraviolet light after the first region is polished, the polishing pad 110 does not polish the substrate to be polished 140, and the second region is polished after the ultraviolet light emitting device 130 irradiates the first region. That is, the ultraviolet light emitting device 130 may perform ultraviolet light irradiation on a certain region after the polishing pad 110 finishes polishing the region, so as to immediately reduce the charge amount of the friction charges and reduce the probability of static electricity generation, and during the ultraviolet light irradiation, the polishing pad 110 may continue to polish the next region after the ultraviolet light emitting device 130 irradiates the last region that has been polished.
The third implementation manner is as follows: the substrate to be polished 140 includes a first region and a second region, the ultraviolet light emitting device 130 can irradiate the first region with the emitted ultraviolet light after the first region is polished, and the polishing pad 110 can polish the second region while the ultraviolet light emitting device 130 irradiates the first region. That is, the uv light emitting device 130 can perform uv light irradiation on a certain area immediately after the polishing pad 110 finishes polishing, and meanwhile, in order to save the overall time of the chemical mechanical polishing, when the uv light emitting device 130 irradiates a previous polished area, the polishing pad 110 can continue polishing the next area.
In the embodiment of the present application, the ultraviolet light may directly ionize the air around the substrate 140 to be processed to generate neutralizing charges, and may also deliver a gas with higher purity to the periphery of the substrate 140 to be processed, so as to increase the efficiency of generating the neutralizing charges by ionization. Therefore, the chemical mechanical polishing apparatus 100 may further include a gas pipe 310, as shown with reference to fig. 3. The gas pipe 310 is used to deliver a neutralizing gas, which is ionized by ultraviolet light and generates neutralizing charges, to the surroundings of the substrate 140 to be polished.
Since in the embodiments of the present application, the material to be ground is generally silicon or silicon oxide, and the frictional charge generated in the mask process is generally negative charge, in order to neutralize the frictional charge, the neutralizing charge is positive charge, and at this time, the neutralizing gas may be at least one of nitrogen, argon, and carbon dioxide. The flow rate of the neutralizing gas may be in the range of 500-.
In the embodiment of the present application, the ultraviolet light emitting device 130 needs to be located at a position where ultraviolet light can irradiate the entire area of the substrate 140 to be processed, for example, the ultraviolet light emitting device 130 may be located directly above the substrate 140 to be processed. The number of the ultraviolet light emitting devices 130 may be plural so as to be able to provide all-directional ultraviolet light irradiation to the substrate 140 to be processed.
As a possible implementation manner, the chemical mechanical polishing apparatus 100 may further include a polishing disc 410, as shown in fig. 4, the polishing disc 410 is fixedly connected to the polishing pad 110, the polishing disc 410 is located above the polishing pad 110, the ultraviolet light emitting device 130 may also be disposed on the polishing disc 410 and fixedly connected to the polishing disc 410, and the ultraviolet light emitting device 130 is adjacent to the polishing pad 110.
In the embodiment of the present application, the generated triboelectric charges may be measured in real time during the polishing of the substrate 140 to be polished, so as to determine the required charge amount for neutralizing the charges according to the charge amount of the triboelectric charges. Neutralizing electricityThe amount of charge can be determined by the intensity of the ultraviolet light, the time during which the ultraviolet light irradiates the substrate 140 to be polished, and the amount of gas flow of the neutralizing gas. Specifically, the light intensity range of the ultraviolet light emitting device 130 can be 100-2000mW/cm2The time for irradiating the substrate 140 to be polished may be in the range of 2 to 10 min. If the irradiation time of the substrate 140 to be polished is short, the effect of ionizing the neutralizing gas to generate neutralizing charges cannot be obtained, and if the irradiation time of the substrate 140 to be polished is long, the overall polishing time is greatly prolonged, so that the overall polishing efficiency is reduced, the manufacturing time of the semiconductor device is increased, and the manufacturing cost of the semiconductor device is reduced.
In an embodiment of the present application, the chemical mechanical polishing apparatus may further include a polishing liquid supply device and a polishing liquid removal device, the polishing liquid supply device is configured to supply a polishing liquid to an unpolished region of the substrate to be polished, and then the unpolished region is polished by the polishing pad using the polishing liquid. The grinding fluid removing device is used for removing the grinding fluid in the ground area of the substrate to be ground. The ultraviolet light can irradiate the polished area before or after the removal of the polishing liquid, and can also irradiate the polished area in the process of removing the polishing liquid, so that the polishing time is further reduced, and the manufacturing cost of the semiconductor device is reduced.
The embodiment of the application provides chemical mechanical polishing equipment, which comprises a bearing table, a polishing pad and an ultraviolet light emitting device, wherein the bearing table is used for placing a substrate to be polished, the substrate to be polished comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer, the polishing pad polishes the substrate to be polished, friction charges can be generated in the polishing process, after the substrate to be polished is polished, an area which is polished is irradiated by ultraviolet light emitted by the ultraviolet light emitting device, the ultraviolet light can ionize gas around the substrate to be polished and generate neutralization charges, and the neutralization charges can neutralize the generated friction charges, so that static electricity generated in the process of contact polishing of the substrate to be polished by the polishing pad is weakened or even eliminated, the probability of electrostatic breakdown of a film layer in the substrate to be polished is reduced, and the performance of a finally manufactured and formed semiconductor device is improved.
In addition, the embodiment of the present application also provides a chemical mechanical polishing method, and reference is made to fig. 5, which is a schematic flow chart of the chemical mechanical polishing method provided in the embodiment of the present application. The chemical mechanical polishing method provided by the embodiment of the application utilizes the chemical mechanical polishing equipment provided by the embodiment, and the method comprises the following steps:
and S101, grinding the substrate to be ground.
In an embodiment of the present application, the substrate to be ground may be a semiconductor substrate, such as an SOI substrate. The substrate to be ground comprises at least a buried oxide BOX layer and a silicon-on-insulator SOI layer covering at least a portion of the BOX layer. The substrate to be polished may also include a silicon layer covered with a buried oxide BOX layer. Because the flatness and smoothness of the surface of the SOI layer need to be improved, a silicon oxide material is firstly deposited on a substrate to be ground to form a silicon oxide layer covering the SOI layer and the BOX layer, then an amorphous silicon layer is continuously deposited on the silicon oxide layer, and then the amorphous silicon layer and the silicon oxide layer are removed by utilizing chemical mechanical grinding, so that the SOI layer with higher surface flatness is finally obtained. That is, it is necessary to polish the amorphous silicon layer and the silicon oxide layer using a chemical mechanical polishing apparatus.
S102, carrying out ultraviolet irradiation on the ground area of the substrate to be ground.
In the embodiment of the application, during the contact grinding process of the substrate to be ground, static electricity caused by friction exists, and the static electricity can break down a BOX layer in the substrate to be ground, so that the performance of the finally manufactured semiconductor device is reduced. At this time, ultraviolet light can be used for irradiating the ground area in the substrate to be ground, the ultraviolet light can ionize gas around the substrate to be ground and generate neutralizing charges, and the neutralizing charges can neutralize friction charges generated in the grinding process, so that static electricity generated in the contact grinding process is weakened or even eliminated, the probability of electrostatic breakdown of a BOX layer in the substrate to be ground is reduced, and the performance of a finally manufactured and formed semiconductor device is improved.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (10)
1. A chemical mechanical polishing apparatus, comprising: the polishing device comprises a polishing pad, a bearing table and an ultraviolet light emitting device;
the bearing table is used for placing a substrate to be ground, and the substrate to be ground comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer at least covering part of the BOX layer;
the grinding pad is used for grinding the substrate to be ground;
the ultraviolet light emitting device is used for emitting ultraviolet light to irradiate the substrate to be ground, the ultraviolet light ionizes gas around the substrate to be ground and generates neutralizing charges, and the neutralizing charges are used for neutralizing friction charges generated by the grinding pad and the substrate to be ground in the grinding process.
2. The chemical mechanical polishing apparatus according to claim 1, wherein the substrate to be polished includes a first region and a second region;
the polishing pad is used for polishing the first area and the second area;
the ultraviolet light emitting device is used for irradiating the first area and the second area by using emitted ultraviolet light after the first area and the second area are both ground.
3. The chemical mechanical polishing apparatus according to claim 1, wherein the substrate to be polished includes a first region and a second region;
the ultraviolet light emitting device is used for irradiating the first area by using the emitted ultraviolet light after the first area is ground;
the polishing pad is used for polishing the second area when the ultraviolet light emitting device irradiates the first area.
4. The chemical mechanical polishing apparatus according to claim 1, wherein the substrate to be polished includes a first region and a second region;
the ultraviolet light emitting device is used for irradiating the first area by using the emitted ultraviolet light after the first area is ground;
the grinding pad is used for grinding the second area after the ultraviolet light emitting device irradiates the first area.
5. The chemical mechanical polishing apparatus as recited in any one of claims 1 to 4, further comprising: a gas conduit;
the gas pipeline is used for conveying neutralizing gas to the periphery of the substrate to be ground, and the neutralizing gas is used for being ionized by the ultraviolet light and generating neutralizing charges.
6. The chemical mechanical polishing apparatus of claim 5, wherein the neutralizing gas is at least one of nitrogen, argon, and carbon dioxide.
7. The chemical mechanical polishing apparatus as claimed in claim 5, wherein the flow rate of the neutralizing gas is in the range of 500-.
8. The chemical mechanical polishing apparatus as recited in any one of claims 1 to 4, further comprising: a grinding disk;
the grinding disc is fixedly connected with the grinding pad and is positioned above the grinding pad;
the ultraviolet light emitting device is fixedly connected with the grinding disc, and the ultraviolet light emitting device is adjacent to the grinding pad.
9. The chemical mechanical polishing apparatus as claimed in any one of claims 1 to 4, wherein the light intensity of the UV light emitting device is in the range of 100-2000mW/cm2And the time range of irradiating the substrate to be ground is 2-10 min.
10. A chemical mechanical polishing method using the chemical mechanical polishing apparatus according to any one of claims 1 to 9, comprising:
grinding a substrate to be ground, wherein the substrate to be ground comprises a buried oxide BOX layer and a silicon-on-insulator SOI layer at least covering a part of the BOX layer;
and irradiating the ground area of the substrate to be ground with ultraviolet light to ionize gas around the substrate to be ground by using the ultraviolet light and generate neutralizing charges, wherein the neutralizing charges are used for neutralizing friction charges generated in the grinding process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111240802.6A CN113814887B (en) | 2021-10-25 | 2021-10-25 | Chemical mechanical polishing equipment and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111240802.6A CN113814887B (en) | 2021-10-25 | 2021-10-25 | Chemical mechanical polishing equipment and method |
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| Publication Number | Publication Date |
|---|---|
| CN113814887A true CN113814887A (en) | 2021-12-21 |
| CN113814887B CN113814887B (en) | 2023-01-24 |
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| CN202111240802.6A Active CN113814887B (en) | 2021-10-25 | 2021-10-25 | Chemical mechanical polishing equipment and method |
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| CN112382605A (en) * | 2020-11-11 | 2021-02-19 | 上海华力集成电路制造有限公司 | Method for manufacturing FDSOI |
| CN112476228A (en) * | 2019-08-23 | 2021-03-12 | 台湾积体电路制造股份有限公司 | Method for operating chemical mechanical planarization tool |
| CN113325625A (en) * | 2021-06-24 | 2021-08-31 | 业成科技（成都）有限公司 | Preparation method of display panel |
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