CN113810011A - Bulk acoustic wave resonator and bulk acoustic wave filter - Google Patents
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/02007—Details of bulk acoustic wave devices
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- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
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Abstract
The application provides a bulk acoustic wave syntonizer and bulk acoustic wave filter relates to wave filter technical field, includes: the acoustic reflection structure, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked on the substrate, the top electrode, the piezoelectric layer, the bottom electrode and the acoustic reflection structure are provided with an overlapping area in the orthographic projection of the substrate, the overlapping area is an asymmetric area, the outline of the overlapping area is formed by connecting a first curve and a second curve end to end, and the first curve and the second curve are different in shape. So, when horizontal sound wave was propagated in the overlap area, because the outline of overlap area comprises two curves, consequently, horizontal sound wave can reflect with different angles after the reflection on curve limit to make the regularity of horizontal sound wave propagation path destroyed, demonstrate irregular state, thereby can effectively weaken the excitation of horizontal standing wave, restrain the horizontal pseudo-mode of bulk acoustic wave syntonizer, improve the Q value of device.
Description
Technical Field
The application relates to the technical field of filters, in particular to a bulk acoustic wave resonator and a bulk acoustic wave filter.
Background
With the rapid development of wireless communication, wireless signals become more and more crowded, and new requirements of integration, miniaturization, low power consumption, high performance, low cost and the like are provided for a filter working in a radio frequency band. The conventional saw filter will not meet such standards due to the limitations of frequency and power. Film Bulk Acoustic Resonators (FBARs) are becoming the focus of research in radio frequency filters due to their CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capability.
The Q value is an important index for measuring the performance of the resonator, and the reduction of the Q value of the resonator directly influences the in-band insertion loss and roll-off characteristics of the filter, thereby influencing the filtering performance of the filter. Therefore, how to suppress the lateral standing wave and increase the Q value of the bulk acoustic wave resonator is a technical problem to be solved.
In the existing bulk acoustic wave resonator structure, the effective working area is usually designed in a polygonal shape or an irregular shape combining a straight edge and a curved edge, but the arrangement of the straight edge can increase the probability of exciting the lateral standing wave of the bulk acoustic wave resonator, thereby affecting the device performance.
Disclosure of Invention
The present application aims to provide a bulk acoustic wave resonator and a bulk acoustic wave filter to reduce the probability of exciting a lateral standing wave of the bulk acoustic wave resonator and improve the device performance, aiming at the defects in the prior art.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
in an aspect of the embodiments of the present application, there is provided a bulk acoustic wave resonator, including: the acoustic reflection structure, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked on the substrate, the top electrode, the piezoelectric layer, the bottom electrode and the acoustic reflection structure are provided with an overlapping area in the orthographic projection of the substrate, the overlapping area is an asymmetric area, the outline of the overlapping area is formed by connecting a first curve and a second curve end to end, and the first curve and the second curve are different in shape.
Optionally, two connection points of the first curve and the second curve may define a first straight line, an orthographic projection of the first curve on the first straight line is located between the two connection points, and an orthographic projection of the second curve on the first straight line is located between the two connection points.
Optionally, a ratio of a distance from a peak of the first curve to the first straight line to a distance between the two connection points is greater than 0.5 and less than 1.5.
Optionally, a ratio of a distance from a peak of the second curve to the first straight line to a distance between the two connection points is less than 0.5.
Optionally, the first curve and the second curve are respectively located on two sides of the first straight line.
Optionally, the first curve and the second curve are both located on the same side of the first straight line.
Optionally, the second curve includes a plurality of sub-curves connected in sequence, and the orthographic projection of each sub-curve on the first straight line is different from the orthographic projection of the remaining sub-curves on the first straight line in length.
Optionally, the acoustic reflection structure is an air cavity or a high-low acoustic impedance stack; the first curve and the second curve are both non-regular trigonometric function linearity.
In another aspect of the embodiments of the present application, there is provided a bulk acoustic wave filter, including a plurality of bulk acoustic wave resonators according to any one of the above embodiments, where two adjacent bulk acoustic wave resonators are connected in series or in parallel.
Optionally, the opposite sides of the overlapping regions of two adjacent bulk acoustic wave resonators are concave-convex complementary.
The beneficial effect of this application includes:
the application provides a bulk acoustic wave resonator and bulk acoustic wave filter, include: the acoustic reflection structure, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked on the substrate, the top electrode, the piezoelectric layer, the bottom electrode and the acoustic reflection structure are provided with an overlapping area in the orthographic projection of the substrate, the overlapping area is an asymmetric area, the outline of the overlapping area is formed by connecting a first curve and a second curve end to end, and the first curve and the second curve are different in shape. So, when horizontal sound wave was propagated in the overlap area, because the outline of overlap area comprises two curves, consequently, horizontal sound wave can reflect with different angles after the reflection on curve limit to make the regularity of horizontal sound wave propagation path destroyed, demonstrate irregular state, thereby can effectively weaken the excitation of horizontal standing wave, restrain the horizontal pseudo-mode of bulk acoustic wave syntonizer, improve the Q value of device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a bulk acoustic wave resonator according to an embodiment of the present disclosure;
fig. 2 is a second schematic structural diagram of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 3 is a top view of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 4 is one of schematic shapes of overlapping regions of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 5 is a second schematic diagram illustrating the shape of the overlap region of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 6 is a schematic diagram illustrating an acoustic wave lateral propagation path of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 7 is a third schematic diagram illustrating a shape of an overlap region of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 8 is a fourth schematic diagram illustrating the shape of the overlapped region of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 9 is a fifth schematic view illustrating a shape of an overlap region of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of a bulk acoustic wave filter according to an embodiment of the present application;
fig. 11 is a schematic circuit diagram of a bulk acoustic wave filter according to an embodiment of the present application.
Icon: 100-a substrate; 110-a signal input; 120-a signal output; 200-an acoustic reflective structure; 300-bottom electrode; 400-a piezoelectric layer; 500-a top electrode; 600-an overlap region; 610-propagation path.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In an aspect of the embodiments of the present application, there is provided a bulk acoustic wave resonator, as shown in fig. 1, 2 and 3, including: a substrate 100, an acoustic reflection structure 200 disposed on the substrate 100, a bottom electrode 300 disposed on the acoustic reflection structure 200, a piezoelectric layer 400 disposed on the bottom electrode 300, and a top electrode 500 disposed on the piezoelectric layer 400, thereby forming a laminated structure, wherein the substrate 100 may be a Si substrate 100, SiO substrate2Substrate 100, SiC substrate 100, etc., the piezoelectric layer 400 material can be AlN, ScAlN, ZnO, PZT, and LiNO3And the like.
As shown in fig. 1 and 2, the orthographic projections of the top electrode 500, the piezoelectric layer 400, the bottom electrode 300 and the acoustic reflection structure 200 on the substrate 100 each have an overlap area 600, i.e. the active working area of the bulk acoustic wave resonator. After radio frequency signals are applied to the top electrode 500 and the bottom electrode 300, longitudinal mode vibration is generated in the effective working area, so that longitudinal sound waves are generated in the effective working area, and then the longitudinal sound waves are converted into electric signals by using the piezoelectric effect to be output. In addition, when longitudinal sound waves are generated, transverse vibration is correspondingly generated, and transverse parasitic modes are brought, so that the Q value of the device is reduced, and the performance of the device is influenced.
As shown in fig. 4, the overlapping area 600 is set as an asymmetric area, and the outline of the overlapping area 600 is formed by connecting two different strip-shaped curves end to end, that is, a first curve a and a second curve B end to end, and the intersection point of the first curve a and the second curve B is a connection point of the two curves, there are only two curves, that is, there is no intersection point in the portion of the first curve a and the second curve B between the two end points. The shapes of the first curve a and the second curve B may also be different, so as shown in fig. 6, when the transverse acoustic wave propagates in the overlap region 600, because the outline of the overlap region 600 is formed by two curves, the transverse acoustic wave may be reflected at different angles after being reflected by the curve edges, so that the regularity of the propagation path 610 of the transverse acoustic wave is destroyed, and a random state is presented, thereby effectively weakening the excitation of the transverse standing wave, suppressing the transverse pseudo mode of the bulk acoustic wave resonator, and improving the Q value of the device.
Alternatively, as shown in fig. 5, the two connection points of the first curve a and the second curve B may determine the first straight line L based on the principle of two points and one line, and only the portion of the first straight line L between the two connection points of the first curve a and the second curve B is shown in fig. 5. It should be noted that the first straight line L belongs to the auxiliary reference line, i.e. does not actually exist in the bulk acoustic wave resonator, and it is only used for understanding the technical solution of the present application.
As shown in fig. 5, an orthographic projection of the first curve a on the first straight line L is performed, that is, each point on the first curve a is taken as a perpendicular line from the point to the first straight line L, and then each point is projected to the first straight line L along the perpendicular line direction of the point, and an obtained line segment is an orthographic projection of the first curve a on the first straight line L. Similarly, the orthographic projection of the second curve B on the first straight line L is performed, that is, each point on the second curve B is taken as a perpendicular line from the point to the first straight line L, then each point is projected to the first straight line L along the perpendicular line direction of the point, and the obtained line segment is the orthographic projection of the second curve B on the first straight line L.
As shown in fig. 5, the orthographic projection of the first curve a on the first straight line L is located between two connection points, and meanwhile, the orthographic projection of the second curve B on the first straight line L is also located between two connection points, that is, the first straight line L is taken as the X axis, the first curve a and the second curve B each have a peak, the peaks of the first curve a and the second curve B are taken as the first perpendicular line L1 and the second perpendicular line L2 of the first straight line L, respectively, so that the intersection point of the first perpendicular line L1 and the first straight line L and the intersection point of the second perpendicular line L2 and the first straight line L are both located between two connection points of the first curve a and the second curve B, and thus, the device performance can be further improved.
Optionally, as shown in fig. 5, a distance L1 from the peak of the first curve a to the first straight line L and a distance ratio between two connection points are greater than 0.5 and less than 1.5.
Optionally, as shown in fig. 5, a ratio of a distance L2 from the peak of the second curve B to the first straight line L to a distance between two connection points is less than 0.5.
When the two curves forming the overlapping region 600 satisfy the above ratio, the aspect ratio of the shape of the bulk acoustic wave resonator can be limited, which is beneficial to drawing a layout, and the layout area of the bulk acoustic wave filter is reduced; on the other hand, the large length-width ratio can cause the internal stress of the prepared device to be large, and the performance of the bulk acoustic wave resonator is reduced.
Optionally, as shown in fig. 7, the first curve a and the second curve B may be respectively located on two sides of the first straight line (not shown in fig. 7), and the first curve a and the second curve B have different shapes, and the profile formed by connecting the first curve a and the second curve B is an asymmetric figure, at this time, the area of the overlapping region 600 is large, and the path length of the lateral propagation of the acoustic wave can be increased, so that the loss of the lateral propagation of the acoustic wave is increased, and the lateral pseudo mode of the bulk acoustic wave resonator is suppressed.
Optionally, as shown in fig. 4 and 5, the first curve a and the second curve B are both located on the same side of the first straight line L, and the first curve a and the second curve B have different shapes, and the profile formed by connecting the first curve a and the second curve B is also an asymmetric graph, so that the first curve a and the second curve B can be close to each other, the reflection times of the lateral propagation of the acoustic wave can be increased, and by virtue of the shapes of the first curve a and the second curve B, the regularity of the lateral propagation of the acoustic wave can be further reduced, and the lateral pseudo mode of the bulk acoustic wave resonator can be suppressed.
Optionally, the second curve includes a plurality of sub-curves connected in sequence, so that the complexity of the shape of the second curve can be increased, the diversity of the transverse sound wave when reflected by the second curve is increased, and the regularity of the propagation of the transverse sound wave is further reduced, that is, the regularity of the propagation path 610 is further disturbed by the plurality of sub-curves in the propagation process of the transverse sound wave, so as to improve the Q value of the bulk acoustic wave resonator.
On the basis, the lengths of the orthographic projections of the sub-curves on the first straight line can be further different pairwise, namely the length of the orthographic projection of one sub-curve on the first straight line is different from the lengths of the orthographic projections of the rest sub-curves on the first straight line. The orthographic projection of the sub-curve on the first straight line can be that a perpendicular line from each point on the sub-curve to the first straight line is drawn, then each point is projected to the first straight line along the perpendicular line direction of the point, and the obtained line segment is the orthographic projection of the sub-curve on the first straight line. Therefore, the complexity and the irregularity of the shape of the second curve can be further increased, so that when the transverse sound wave is transmitted to the second curve and reflected at the second curve, the regularity after reflection can be further destroyed, and the Q value of the bulk acoustic wave resonator is improved.
In some embodiments, when the second curve includes a plurality of sub-curves, the plurality of sub-curves may be all located on the same side of the first straight line as the first curve, or located on both sides of the first straight line as the first curve, or the second curve formed by the plurality of sub-curves crosses the first straight line.
In some embodiments, as shown in fig. 8, the second curve includes two sub-curves, one of which has the same concave-convex direction as the first curve, and the other of which has the opposite concave-convex direction as the first curve, and the two sub-curves have different lengths and different shapes. Therefore, the complexity of the second curve can be increased while the effective working area is increased, and the regularity of transverse sound wave propagation is weakened.
In some embodiments, as shown in fig. 9, the second curve includes 7 sub-curves, and the 7 sub-curves are connected in sequence, that is, the starting point of the first sub-curve coincides with one end point of the first curve, the end point of the first sub-curve coincides with the starting point of the second sub-curve, the end point of the second sub-curve coincides with the starting point of the third sub-curve, the end point of the third sub-curve coincides with the starting point of the fourth sub-curve, and so on, until the end point of the seventh sub-curve coincides with the other end point of the first curve, and the length and shape of each sub-curve and the length and shape of all the remaining sub-curves are different. As shown in fig. 9, the second curve may be a wave shape, so that the effective working area can be further increased, and the complexity of the second curve can be further increased, thereby further reducing the regularity of the transverse sound wave propagation.
In other embodiments, the number of sub-curves included in the second sub-curve may be greater, and when the number of sub-curves is greater, and the number of sub-curves with different shapes and lengths is also greater, the complexity of the second curve can be further increased, so as to further reduce the regularity of the transverse sound wave propagation.
In some embodiments, as shown in fig. 1, the acoustic reflection structure 200 is an air cavity, that is, a groove may be formed on the upper surface of the substrate 100 by an etching process, and then a piezoelectric stack structure formed by the lower electrode, the piezoelectric layer 400 and the upper electrode is disposed on the substrate 100, and the piezoelectric stack structure at least covers an opening of the groove, so that the performance of the bulk acoustic wave resonator can be improved.
In some embodiments, as shown in fig. 2, the acoustic reflection structure 200 may be a high-low acoustic impedance laminate, i.e., layers of high acoustic impedance and low acoustic impedance material are formed on the upper surface of the substrate 100 in an alternating fashion. Thus, the performance of the bulk acoustic wave resonator can be improved.
In some embodiments, the first curve and the second curve are both non-regular trigonometric functions linear, which can further increase the complexity of the contour of the overlap region 600, thereby further reducing the regularity of the transverse sound wave propagation.
In another aspect of the embodiments of the present application, there is provided a bulk acoustic wave filter including a plurality of bulk acoustic wave resonators according to any one of the above embodiments, wherein two adjacent bulk acoustic wave resonators may be connected in series or in parallel, and a circuit formed by the bulk acoustic wave resonators connected in series or in parallel is connected to a signal terminal and a ground terminal, so that the bulk acoustic wave filter is formed.
In some embodiments, as shown in fig. 10 and 11, the bulk acoustic wave filter includes two series connected bulk acoustic wave resonators with different frequencies, the left bulk acoustic wave resonator is connected to the signal input terminal 110, and the right bulk acoustic wave resonator is connected to the signal output terminal 120 and the ground terminal.
In some embodiments, when the overlapped regions 600 of the bulk acoustic wave resonators are disposed on the substrate 100, the opposite sides of two adjacent bulk acoustic wave resonators may adopt a concave-convex complementary arrangement, so that more bulk acoustic wave resonators can be placed in a limited region, thereby improving space utilization. As shown in fig. 10, by reasonable arrangement, the curved edge of the left bulk acoustic wave resonator adjacent to the right bulk acoustic wave resonator adopts a concave shape, and meanwhile, the curved edge of the right bulk acoustic wave resonator adjacent to the left bulk acoustic wave resonator adopts a convex shape, so that a concave-convex matching layout form is formed. Of course, the left side may be provided with a figure and the right side may be provided with a concave shape.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A bulk acoustic wave resonator, comprising: the acoustic reflection structure, the bottom electrode, the piezoelectric layer and the top electrode are sequentially stacked on the substrate, the top electrode, the piezoelectric layer, the bottom electrode and the acoustic reflection structure are provided with an overlapping area in the orthographic projection of the substrate, the overlapping area is an asymmetric area, the outline of the overlapping area is formed by connecting a first curve and a second curve in an end-to-end mode, and the first curve and the second curve are different in shape.
2. The bulk acoustic wave resonator according to claim 1, wherein two connection points of the first curve and the second curve define a first straight line, an orthogonal projection of the first curve on the first straight line is located between the two connection points, and an orthogonal projection of the second curve on the first straight line is located between the two connection points.
3. The bulk acoustic wave resonator according to claim 2, wherein a ratio of a distance from a peak of the first curve to the first straight line to a distance between the two connection points is greater than 0.5 and less than 1.5.
4. The bulk acoustic wave resonator according to claim 2, wherein a ratio of a distance from a peak of the second curve to the first straight line to a distance between the two connection points is less than 0.5.
5. The bulk acoustic wave resonator according to claim 2, wherein the first curve and the second curve are located on both sides of the first straight line, respectively.
6. The bulk acoustic wave resonator according to claim 2, wherein the first curve and the second curve are both located on the same side of the first straight line.
7. The bulk acoustic wave resonator according to claim 2, wherein the second curve comprises a plurality of sequentially connected sub-curves, and an orthogonal projection of each sub-curve on the first straight line is different from an orthogonal projection of the remaining sub-curves on the first straight line in length.
8. The bulk acoustic wave resonator according to any one of claims 1 to 7, wherein the acoustic reflection structure is an air cavity or a stack of high and low acoustic impedance layers; the first curve and the second curve are both non-regular trigonometric function linearity.
9. A bulk acoustic wave filter comprising a plurality of bulk acoustic wave resonators according to any one of claims 1 to 8, wherein adjacent two of said bulk acoustic wave resonators are connected in series or in parallel.
10. The bulk acoustic wave filter according to claim 9, wherein the sides of the two adjacent bulk acoustic wave resonators opposite to the overlapping region are concave-convex complementary.
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| CN114723110A (en) * | 2022-03-24 | 2022-07-08 | 武汉敏声新技术有限公司 | Automatic layout system and equipment for bulk acoustic wave filter |
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| US20200076403A1 (en) * | 2018-08-30 | 2020-03-05 | Skyworks Solutions, Inc. | Film bulk acoustic resonator having suppressed lateral mode |
| DE102019120558A1 (en) * | 2019-07-30 | 2021-02-04 | RF360 Europe GmbH | BAW resonator with reduced lateral modes |
| CN211791457U (en) * | 2020-05-15 | 2020-10-27 | 开元通信技术（厦门）有限公司 | Bulk acoustic wave device and filtering device |
| CN113037243A (en) * | 2021-03-24 | 2021-06-25 | 江苏物联网研究发展中心 | Film bulk acoustic resonator for suppressing parasitic clutter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114723110A (en) * | 2022-03-24 | 2022-07-08 | 武汉敏声新技术有限公司 | Automatic layout system and equipment for bulk acoustic wave filter |
| CN114723110B (en) * | 2022-03-24 | 2023-12-19 | 武汉敏声新技术有限公司 | Automatic layout system of bulk acoustic wave filter and electronic equipment |
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