CN113793814B - Method for representing electrode deposition damage of tellurium-cadmium-mercury infrared detector - Google Patents
Method for representing electrode deposition damage of tellurium-cadmium-mercury infrared detector Download PDFInfo
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- CN113793814B CN113793814B CN202110994584.9A CN202110994584A CN113793814B CN 113793814 B CN113793814 B CN 113793814B CN 202110994584 A CN202110994584 A CN 202110994584A CN 113793814 B CN113793814 B CN 113793814B
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000008021 deposition Effects 0.000 title claims abstract description 33
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 49
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000151 deposition Methods 0.000 claims description 34
- 238000012360 testing method Methods 0.000 claims description 33
- 238000001465 metallisation Methods 0.000 claims description 29
- 238000003466 welding Methods 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 238000007781 pre-processing Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 239000007788 liquid Substances 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000007737 ion beam deposition Methods 0.000 description 3
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for characterizing electrode deposition damage of a mercury cadmium telluride infrared detector, which can effectively characterize the electrode deposition damage of a preset mercury cadmium telluride chip, thereby optimizing electrode growth conditions, reducing the electrode deposition damage and finally improving the performance of the mercury cadmium telluride infrared detector.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for representing electrode deposition damage of a mercury cadmium telluride infrared detector.
Background
To date, development of infrared focal plane detectors has been mainly performed in the technical field of infrared detectors, and the mercury cadmium telluride infrared detector covers the whole infrared band from short wave to very long wave (1-16 μm), and each band shows better performance. Photocurrent formed by the large-scale pn junction array is transmitted to a read-out circuit through a metal electrode, so that signal conversion is completed. In the signal conversion process of the detector, the contact performance of a device with larger electrode deposition damage is poor, and large current noise is often accompanied, so that the pixel has no response signal or small response signal, and is judged as a blind pixel. How to detect the electrode deposition damage becomes a problem to be solved.
Disclosure of Invention
The invention provides a method for characterizing electrode deposition damage of a mercury cadmium telluride infrared detector, which aims to solve the problem that the electrode deposition damage cannot be well characterized in the prior art.
The invention provides a method for characterizing electrode deposition damage of a mercury cadmium telluride infrared detector, which comprises the following steps: measuring the carrier concentration of a preset mercury cadmium telluride chip before metal is not deposited, wherein the preset mercury cadmium telluride chip is an n-type mercury cadmium telluride chip or a p-type mercury cadmium telluride chip;
Growing a metal electrode on the whole surface of the preset tellurium-cadmium-mercury chip, and measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition;
Judging whether the variation increment of the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition and the carrier concentration of the preset tellurium-cadmium-mercury chip before metal deposition is larger than a preset concentration threshold value or not, if so, judging that the electrode deposition damage of the preset tellurium-cadmium-mercury chip is too large, and influencing the device processing technology of the preset tellurium-cadmium-mercury chip.
Optionally, before determining the carrier concentration of the preset mercury cadmium telluride chip before depositing the metal, the method further comprises: and preprocessing the preset mercury cadmium telluride chip, and testing the preprocessed preset mercury cadmium telluride chip.
Optionally, preprocessing the preset tellurium-cadmium-mercury chip includes: and cleaning the preset tellurium-cadmium-mercury chip, and drying.
Optionally, testing the pretreated preset tellurium-cadmium-mercury chip includes: and welding the lead wires to four corners of the preset tellurium-cadmium-mercury chip, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement.
Optionally, the determining the carrier concentration of the preset mercury cadmium telluride chip before the metal is not deposited comprises:
And measuring the carrier concentration of the whole preset tellurium-cadmium-mercury chip before metal deposition by Fan Debao method.
Optionally, after growing the metal electrode on the entire surface of the preset tellurium-cadmium-mercury chip, before measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after depositing the metal, the method further comprises: and stripping the metal electrode by a chemical method, welding the metal electrode to four corners of the preset tellurium-cadmium-mercury chip through a lead, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement.
Optionally, the chemically stripping the metal electrode includes: the electrode is removed by using concentrated HCl to remove metal or metal etchant.
Optionally, the soldering to four corners of the preset tellurium-cadmium-mercury chip through the lead wires and testing the preset tellurium-cadmium-mercury chip comprise: and welding the lead wires to four corners of the preset tellurium-cadmium-mercury chip, ensuring that the welding position of the lead wires is consistent with the welding position before metal deposition, enabling the linear contact of the electrodes to meet the preset contact requirement, and then testing the preset tellurium-cadmium-mercury chip.
Optionally, measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition includes: and measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition by Fan Debao method.
Optionally, setting the preset concentration threshold according to blind pixel data statistics of tellurium-cadmium-mercury chips under deposition damage of the historical record.
Optionally, the preset concentration threshold is 10%.
The invention has the following beneficial effects:
The method can effectively characterize the electrode deposition damage of the preset tellurium-cadmium-mercury chip, so that the electrode growth condition is optimized, the electrode deposition damage is reduced, and finally the performance of the tellurium-cadmium-mercury infrared detector is improved.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic flow chart of a method for characterizing mercury cadmium telluride infrared detector electrode deposition damage provided by an embodiment of the present invention;
FIG. 2 is a flow chart of another method for characterizing mercury cadmium telluride infrared detector electrode deposition damage provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a bonding wire to four electrodes on a mercury cadmium telluride surface using an indium press in an embodiment of the present invention;
fig. 4 is a graph showing the change in carrier concentration of four groups of samples before and after electrodeposition in accordance with an embodiment of the present invention.
Detailed Description
Aiming at the problem that the electrode deposition damage cannot be well represented in the prior art, the embodiment of the invention provides a method for representing the electrode deposition damage, so that the electrode growth condition is optimized, and the electrode deposition damage is reduced. The present invention will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the invention provides a method for representing electrode deposition damage of a mercury cadmium telluride infrared detector, which is shown in fig. 1 and comprises the following steps:
s101, measuring the carrier concentration of a preset HgCdTe chip before metal deposition, wherein the preset HgCdTe chip is an n-type HgCdTe chip or a p-type HgCdTe chip;
In particular, before step S101, the method further includes: and preprocessing the preset mercury cadmium telluride chip, and testing the preprocessed preset mercury cadmium telluride chip.
The pretreatment of the preset tellurium-cadmium-mercury chip comprises the following steps:
And cleaning the preset tellurium-cadmium-mercury chip, and drying.
Testing the pretreated preset tellurium-cadmium-mercury chip, wherein the testing comprises the following steps:
And welding the lead wires to four corners of the preset tellurium-cadmium-mercury chip, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement. Specifically, the lead is welded on four corners of the tellurium-cadmium-mercury surface, and a semiconductor parameter tester is adopted to observe electrode contact, so that the linearity is required to be more than 0.99.
S102, growing a metal electrode on the whole surface of the preset tellurium-cadmium-mercury chip, and measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition;
in a specific implementation, after growing the metal electrode on the whole surface of the preset tellurium-cadmium-mercury chip, the method further comprises the following steps of: and stripping the metal electrode by a chemical method, welding the metal electrode to four corners of the preset tellurium-cadmium-mercury chip through a lead, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement.
Specifically, the embodiment of the invention uses concentrated HCl to make metal fall off or metal corrosive liquid to remove the electrode.
And the embodiment of the invention is to weld the lead wires to the four corners of the preset tellurium-cadmium-mercury chip, ensure that the welding position of the lead wires is consistent with the welding position before metal deposition, ensure that the linear contact of the electrodes meets the preset contact requirement, and then test the preset tellurium-cadmium-mercury chip.
S103, judging whether the change increment of the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition and the carrier concentration of the preset tellurium-cadmium-mercury chip before metal deposition is larger than a preset concentration threshold value, if so, judging that the electrode deposition damage of the preset tellurium-cadmium-mercury chip is too large, and affecting the device processing technology of the preset tellurium-cadmium-mercury chip.
In specific implementation, the embodiment of the invention sets the preset concentration threshold according to blind element data statistics of tellurium-cadmium-mercury chips under deposition damage of historical records. For example, the preset concentration threshold is set to 10%. Of course, those skilled in the art may set other preset concentration thresholds according to actual needs, which is not particularly limited in the present invention.
The P-type or n-type mercury cadmium telluride in the embodiment of the invention is prepared by liquid phase epitaxy, and the metal electrode can be three common metal electrode materials of the infrared detector of mercury cadmium telluride of Cr, au and Pt. Ion beam deposition equipment grows metal electrodes, and the beam pressure range is: 300V-1500V, 100 mA-400 mA beam current, chemical method includes that concentrated HCl is used for leading metal to fall off or metal corrosive liquid is used for removing the electrode.
The method according to the embodiments of the present invention will be explained and illustrated in detail below with reference to fig. 2, 3 and 4 by means of two specific embodiments:
example 1
The embodiment of the invention provides a method for representing electrode deposition damage of a tellurium-cadmium-mercury infrared detector, which is used for optimizing electrode growth conditions and reducing the electrode deposition damage in the metallization process of the tellurium-cadmium-mercury infrared detector.
1. Selecting an N-type or p-type tellurium-cadmium-mercury chip, cleaning the surface of a material by sequentially adopting acetone and alcohol, and then drying the chip by using an N2 air gun;
2. Welding the lead wires to four corners of the tellurium-cadmium-mercury surface, observing electrode contact by using a semiconductor parameter tester, and requiring linearity to be more than 0.99;
3. measuring the carrier concentration of the whole p-type tellurium-cadmium-mercury chip before metal deposition by adopting Fan Debao method; after the test, removing the lead and In;
4. growing a metal electrode on the whole surface of the tellurium-cadmium-mercury chip by adopting an ion beam deposition technology;
5. Stripping the metal electrode by using a chemical method, wherein the stripping comprises the steps of enabling metal to fall off by using concentrated HCl or removing the electrode by using metal corrosive liquid;
6. Welding a lead to four corners of the tellurium-cadmium-mercury surface by using an In ball, ensuring that the welding position is In contact with the electrode by adopting a semiconductor parameter tester In the prior art, and requiring the linearity to be more than 0.99;
7. measuring the carrier concentration of the whole p-type tellurium-cadmium-mercury chip after metal deposition by adopting Fan Debao method;
8. Comparing the carrier concentration change of the p-type tellurium-cadmium-mercury chip before and after metal deposition; when the carrier concentration variation increment is more than 10% of the carrier concentration before metal deposition, the electrode deposition damage is considered to be larger, and the device processing technology is seriously affected.
Example 2
As shown in fig. 2, an embodiment of the present invention provides a method for characterizing electrode deposition damage of a mercury cadmium telluride infrared detector, which includes:
S101, selecting four groups of samples of p-type tellurium-cadmium-mercury chips a, b, c and d, adopting a Fourier thickness tester to represent the thickness of tellurium-cadmium-mercury, cleaning the surface of a material by adopting acetone and alcohol in sequence, and finally drying the chips by using an N 2 air gun. The thickness refers to the thickness of p-type tellurium-cadmium-mercury after the substrate is removed, and the thickness parameter of the material itself is required to be obtained in a Fan Debao-method test; and the acetone and alcohol are adopted to remove possible organic matters on the surface of the material, so that the stability of the subsequent In ball lead welding is enhanced.
S102, as shown in FIG. 3, in the embodiment of the invention, the lead is welded on the surface of tellurium-cadmium-mercury by utilizing an indium pressing method, and the positions of the four electrodes are kept highly symmetrical; the welding temperature is set to 160-170 ℃, and the prepared In ball is welded on four corners of tellurium cadmium mercury by using an electric iron; and then the other ends of the four leads are welded on a sample card, the sample card is placed in a liquid nitrogen cavity of an IV test system, high-purity liquid nitrogen is added into the liquid nitrogen cavity, the liquid nitrogen is added to the liquid nitrogen cavity, the liquid nitrogen is about 1cm away from a mouth of the liquid nitrogen cavity, and the liquid level is kept stable after waiting for 5 minutes. And observing electrode contact by using a semiconductor parameter tester at 77K, wherein the linearity of all electrode contacts in the test reaches more than 0.99. The Fan Debao method requires that the electrode contact must be a good ohmic contact and that the linearity of the resulting IV curve of the connection method such as 1212,1313,1414,2323,2424,3434 must be observed with a semiconductor parametric meter before the hall test is performed; the electrode contact at 77K was tested because of the fact that the mercury cadmium telluride infrared detector was considered to be practical for use.
S103, measuring the carrier concentration of the whole p-type tellurium-cadmium-mercury chip before metal deposition by adopting Fan Debao method at 77K; wherein the a group carrier concentration is 5.1×10 17/cm3, the b group carrier concentration is 5.3×10 17/cm3, the c group carrier concentration is 4.8×10 17/cm3, and the d group carrier concentration is 5.5×10 17/cm3; and after the test, uniformly removing the lead wires and In on the mercury cadmium telluride surface.
The embodiment of the invention adopts a low-temperature Hall test system, and the Hall test conditions are selected by: -100uA (step value 50 uA), -10KG (step value 10 mG), measuring to obtain a Hall coefficient (R H) under a 77K changing magnetic field, and obtaining the conductivity type, carrier concentration and mobility of the mercury cadmium telluride material through later analysis of software.
And S104, growing a metal electrode Cr on the whole surface of the tellurium-cadmium-mercury chip by utilizing an ion beam deposition system. The four groups of chips sequentially use different beam currents and beam pressure conditions of 200mA/600V,200mA/8000V,200mA/1000 and 200mA/1200V respectively; in order to maintain the consistent thickness of the metal electrode, the growth time of the four groups of chips a, b, c and d is not completely the same, and is sequentially 30min, 45min, 60min and 75min.
In the process of depositing a metal film by an ion beam, the beam pressure refers to energy carried by inert gas ions emitted from an ion source, and the beam current refers to the quantity of ions emitted from the ion source per unit area per unit time.
S105, placing the chip into 50mL of concentrated HCl, soaking for 10min to enable metal to automatically fall off, then flushing for 2min by pure water, vertically aligning the chip with an alcohol spray gun at a pressure of 1Kg to remove possible dirt, and finally observing the chip by an optical microscope to ensure that the dirt and the electrode are removed cleanly.
In the embodiment, the chemical method not only can adopt concentrated HCl to soak and make metal fall off, but also can directly corrode the metal electrode by using metal corrosive liquid.
S106, welding the lead wire on the surface of mercury cadmium telluride by utilizing an indium pressing method, and keeping the positions of four electrodes of each chip consistent with S102; the welding temperature is set to 160-170 ℃, and the prepared In ball is welded on four corners of tellurium cadmium mercury by using an electric iron; and then the other ends of the four leads are welded on a sample card, the sample card is placed in a liquid nitrogen cavity of an IV test system, high-purity liquid nitrogen is added into the liquid nitrogen cavity, the liquid nitrogen is added to the liquid nitrogen cavity, the liquid nitrogen is about 1cm away from a mouth of the liquid nitrogen cavity, and the liquid level is kept stable after waiting for 5 minutes. And observing electrode contact by using a semiconductor parameter tester at 77K, wherein the linearity of all electrode contacts in the test reaches more than 0.99.
S107, measuring the carrier concentration of the whole p-type tellurium-cadmium-mercury chip after metal deposition by adopting Fan Debao method at 77K; wherein the a group carrier concentration is 5.3×10 17/cm3, the b group carrier concentration is 6.5×10 17/cm3, the c group carrier concentration is 6.9×10 17/cm3, and the d group carrier concentration is 9.9×10 17/cm3; and after the test, uniformly removing the lead wires and In on the mercury cadmium telluride surface.
The embodiment of the invention adopts a low-temperature Hall test system, and the Hall test conditions are selected by: -100uA (step value 50 uA), -10KG (step value 10 mG), measuring to obtain a Hall coefficient (R H) under a 77K changing magnetic field, and obtaining the conductivity type, carrier concentration and mobility of the mercury cadmium telluride material through later analysis of software.
S108, comparing the carrier concentration changes of the p-type tellurium-cadmium-mercury chip before and after metal deposition. When the carrier concentration variation increment is larger than 10% of the carrier concentration before metal deposition, the deposition damage is considered to be larger, and the influence on the device processing technology is larger. As shown in fig. 4, four groups of experimental samples a, b, c and d, the carrier concentration increment Δn e is 2×1016/cm3,1.2×1017/cm3,2.1×1017/cm3,4.4×1017/cm3; in sequence, and compared with the carrier concentration of four groups of samples in S103, it is known that only group a in the four groups of samples meets the standard, other electrode deposition conditions have larger damage to mercury cadmium telluride, and the following IV test has poorer performance than the three groups b, c and d in the blind pixel diagram, so that the growth conditions should be removed in the metallization process of mercury cadmium telluride.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, and accordingly the scope of the invention is not limited to the embodiments described above.
Claims (7)
1. A method of characterizing mercury cadmium telluride infrared detector electrode deposition damage comprising:
Measuring the carrier concentration of a preset mercury cadmium telluride chip before metal is not deposited, wherein the preset mercury cadmium telluride chip is an n-type mercury cadmium telluride chip or a p-type mercury cadmium telluride chip;
Growing a metal electrode on the whole surface of the preset tellurium-cadmium-mercury chip, and measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition; i.e. after growing a metal electrode on the whole surface of the preset mercury cadmium telluride chip, before measuring the carrier concentration of the preset mercury cadmium telluride chip after depositing metal, the method further comprises: stripping the metal electrode by a chemical method, welding the metal electrode to four corners of the preset tellurium-cadmium-mercury chip through a lead, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement; the welding to four corners of the preset tellurium-cadmium-mercury chip through the lead wires and testing the preset tellurium-cadmium-mercury chip comprise the following steps: welding the lead wires to four corners of the preset tellurium-cadmium-mercury chip, ensuring that the welding positions of the lead wires are consistent with the welding positions before metal deposition, and then testing the preset tellurium-cadmium-mercury chip;
judging whether the variation increment of the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition and the carrier concentration of the preset tellurium-cadmium-mercury chip before metal deposition is larger than a preset concentration threshold value or not, if so, judging that the electrode deposition damage of the preset tellurium-cadmium-mercury chip is too large, and affecting the device processing technology of the preset tellurium-cadmium-mercury chip;
Before the measuring of the carrier concentration of the preset mercury cadmium telluride chip before the metal deposition, the method further comprises the following steps: preprocessing the preset mercury cadmium telluride chip, and testing the preprocessed preset mercury cadmium telluride chip;
Testing the pretreated preset tellurium-cadmium-mercury chip, wherein the testing comprises the following steps: and welding the lead wires to four corners of the preset tellurium-cadmium-mercury chip, and testing the preset tellurium-cadmium-mercury chip to determine that the linear contact of the electrode meets the preset contact requirement.
2. The method of claim 1, wherein pre-processing the pre-set mercury cadmium telluride chip comprises:
And cleaning the preset tellurium-cadmium-mercury chip, and drying.
3. The method of claim 1, wherein determining the carrier concentration of the pre-set mercury cadmium telluride chip prior to the deposition of the metal comprises:
And measuring the carrier concentration of the whole preset tellurium-cadmium-mercury chip before metal deposition by Fan Debao method.
4. The method of claim 1, wherein chemically stripping the metal electrode comprises:
The metal was stripped off using concentrated HCl.
5. The method of claim 1, wherein chemically stripping the metal electrode comprises:
The electrode is removed using a metal etchant.
6. The method of claim 1, wherein measuring the carrier concentration of the pre-set mercury cadmium telluride chip after depositing the metal comprises:
and measuring the carrier concentration of the preset tellurium-cadmium-mercury chip after metal deposition by Fan Debao method.
7. The method according to claim 1, wherein the method further comprises:
And setting the preset concentration threshold according to blind pixel data statistics of tellurium-cadmium-mercury chips under deposition damage of the historical record.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110994584.9A CN113793814B (en) | 2021-08-27 | 2021-08-27 | Method for representing electrode deposition damage of tellurium-cadmium-mercury infrared detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110994584.9A CN113793814B (en) | 2021-08-27 | 2021-08-27 | Method for representing electrode deposition damage of tellurium-cadmium-mercury infrared detector |
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| Publication Number | Publication Date |
|---|---|
| CN113793814A CN113793814A (en) | 2021-12-14 |
| CN113793814B true CN113793814B (en) | 2024-04-19 |
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| JP2000035469A (en) * | 1998-07-17 | 2000-02-02 | Toshiba Corp | Semiconductor hall sensor |
| CN102856223A (en) * | 2012-04-06 | 2013-01-02 | 中国电子科技集团公司第十一研究所 | Electrode processing method for tellurium cadmium mercury film electric property test |
| CN109116270A (en) * | 2018-06-27 | 2019-01-01 | 中国电子科技集团公司第十研究所 | The method that a kind of pair of mercury cadmium telluride pn-junction material is tested |
| CN113130674A (en) * | 2021-03-18 | 2021-07-16 | 上海交通大学 | Vertical germanium-silicon photoelectric detector with ITO electrode and preparation method thereof |
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| JP2000035469A (en) * | 1998-07-17 | 2000-02-02 | Toshiba Corp | Semiconductor hall sensor |
| CN102856223A (en) * | 2012-04-06 | 2013-01-02 | 中国电子科技集团公司第十一研究所 | Electrode processing method for tellurium cadmium mercury film electric property test |
| CN109116270A (en) * | 2018-06-27 | 2019-01-01 | 中国电子科技集团公司第十研究所 | The method that a kind of pair of mercury cadmium telluride pn-junction material is tested |
| CN113130674A (en) * | 2021-03-18 | 2021-07-16 | 上海交通大学 | Vertical germanium-silicon photoelectric detector with ITO electrode and preparation method thereof |
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