CN113787047B - Method for removing Sb-doped product corrosive liquid residues - Google Patents
Method for removing Sb-doped product corrosive liquid residues Download PDFInfo
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- CN113787047B CN113787047B CN202110947461.XA CN202110947461A CN113787047B CN 113787047 B CN113787047 B CN 113787047B CN 202110947461 A CN202110947461 A CN 202110947461A CN 113787047 B CN113787047 B CN 113787047B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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Abstract
The invention provides a method for removing Sb-doped product corrosive liquid residues, which comprises the following steps: step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution; step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution; step three, using deionized water to wash for one time; step four, using deionized water for secondary washing; step five, soaking and cleaning by using alkaline liquid medicine; step six, using deionized water to wash for one time; step seven, using deionized water for secondary washing; and step eight, washing with deionized water for three times. The method can effectively remove the residual liquid medicine on the surface.
Description
Technical Field
The invention relates to the technical field of silicon wafer processing, in particular to a method for removing Sb-doped product corrosive liquid residues.
Background
The chemical etching process of silicon is used in the aspects of surface cleaning treatment of semiconductor material silicon, removal of a surface damage layer after mechanical processing of a silicon wafer, thinning of a directly bonded silicon wafer, chemical etching of defects in silicon and the like.
The chemical corrosion of the silicon surface generally adopts a wet corrosion mode, the surface of the silicon chip is corroded to form tiny batteries which are randomly distributed, and the corrosion current is large and generally exceeds 100mA/cm 2 . However, due to the demands for high purity of the etching solution and reduction of possible contamination by metal ions, hydrofluoric acid (HF), nitric acid (HNO) are mainly used at present 3 ) And acetic acid (CH) 3 COOH) mixed acidic etching solution.
During the whole etching and cleaning process: and after the wafer is corroded, the wafer enters the overflow tank for water washing to clean the residual corrosive liquid on the surface of the silicon wafer. However, the liquid cleaning capability of the silicon wafer surface is different due to different doping types of the silicon wafer. Therefore, the chemical solution may remain in the partially doped type wafer.
At present, a method specially suitable for removing the residual Sb (antimony) -doped product corrosive liquid medicine is lacked.
Disclosure of Invention
The invention provides a method for removing Sb-doped product corrosive liquid residues, which solves at least one technical problem.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the invention provides a method for removing Sb-doped product corrosive liquid residues, which is characterized by comprising the following steps of:
step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution;
step two, performing secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution;
step three, using deionized water to wash for one time;
step four, using deionized water for secondary washing;
step five, soaking and cleaning by using alkaline liquid medicine;
step six, using deionized water to wash for one time;
step seven, using deionized water for secondary washing;
and step eight, washing with deionized water for three times.
Further preferably, the SC-1 cleaning solution in the first step and the second step is a mixed solution of ammonia water, hydrogen peroxide and deionized water.
Further preferably, in the step one, the volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide to deionized water of the SC-1 cleaning solution is (1: 5-1): 10;
the mass percentage concentration of the ammonia water is 28%;
the mass percentage concentration of the hydrogen peroxide is 30-35%.
Further preferably, in the step one, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
Further preferably, in the second step, the volume ratio of the ammonia water and the hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;
the mass percentage concentration of the ammonia water is 28%;
the mass percentage concentration of the hydrogen peroxide is 30-35%.
Further preferably, in the second step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
Further preferably, in the third step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.
Further preferably, in the fourth step, the temperature of the deionized water is 23 ℃, and the rinsing time is 3-6 min.
Further preferably, in the fifth step, the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40% -49%.
Further preferably, in the sixth step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
Further preferably, in the seventh step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic view of a silicon wafer surface after a conventional single-pass polishing pad cleaning and acid etching;
FIG. 3 is a schematic view of the wafer surface after the pad cleaning and the acid etching of the process of the present invention.
Detailed Description
The following embodiments are implemented on the premise of the technical scheme of the present invention, and give detailed implementation modes and specific operation procedures, but the protection scope of the present invention is not limited to the following embodiments.
Referring to fig. 1, a method for removing residue of Sb-doped article etching solution is characterized by comprising the following steps:
step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution; the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
The SC-1 cleaning solution is a mixed solution of ammonia water, hydrogen peroxide and deionized water. The volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10; the mass percentage concentration of the ammonia water is 28%; the mass percentage concentration of the hydrogen peroxide is 30-35%.
Step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution; the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
The SC-1 cleaning solution is a mixed solution of ammonia water, hydrogen peroxide and deionized water. The volume ratio of ammonia water to hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide to deionized water of the SC-1 cleaning solution is (1: 5-1): 10;
the mass percentage concentration of the ammonia water is 28%;
the mass percentage concentration of the hydrogen peroxide is 30-35%.
Step three, using deionized water to wash for one time; the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.
Step four, using deionized water for secondary washing; the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.
Step five, soaking and cleaning by using alkaline liquid medicine; the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40-49%.
Step six, using deionized water to wash for one time; the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
And step seven, using deionized water for secondary washing. The temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
And step eight, washing with deionized water for three times. The temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
The cleaning of the grinding plate and the acid etching.
And (5) carrying out abrasive disc cleaning before the first step, and carrying out acid corrosion after the eighth step. The acid etching adopts the traditional acid etching process. The acid etching uses hydrofluoric acid (HF), nitric acid (HNO) 3 ) And acetic acid (CH) 3 COOH) is added. Concentration of hydrofluoric acid: 6-10 wt%; nitric acid: 35-40 wt%; 15-20 wt% of acetic acid.
This patent adds a process step between the cleaning of the abrasive sheet and the acid etching. The process before the wafer is corroded is improved, so that the surface glossiness of the corroded silicon wafer is improved, the existence of liquid medicine residues on the surface of the corroded wafer is reduced, the liquid medicine residues on the surface can be effectively removed through conventional cleaning, and the surface of the wafer is shown in figure 3.
FIG. 2 is a schematic view of a conventional wafer surface which has not undergone direct acid etching after the cleaning of the lapping plate according to the step of this patent.
While the preferred embodiments of the present invention have been described in detail, it will be understood by those skilled in the art that the invention is not limited thereto, and that various changes and modifications may be made without departing from the spirit of the invention, and the scope of the appended claims is to be accorded the full scope of the invention.
Claims (9)
1. A method for removing Sb-doped silicon wafer etching liquid residue is characterized by comprising the following steps:
step one, carrying out primary cleaning by using a primary cleaning mixed solution, wherein the primary cleaning mixed solution is an SC-1 cleaning solution;
step two, carrying out secondary cleaning by using a secondary cleaning mixed solution, wherein the secondary cleaning mixed solution is an SC-1 cleaning solution;
step three, using deionized water to wash for one time;
step four, using deionized water for secondary washing;
step five, soaking and cleaning by using alkaline liquid medicine;
step six, using deionized water to wash for one time;
step seven, using deionized water for secondary washing;
step eight, using deionized water for three times for washing;
cleaning the grinding sheet before the first step, and performing acid corrosion after the eighth step;
in the fifth step, the alkaline liquid medicine is NaOH, and the mass percentage concentration is 40-49%.
2. The method for removing the Sb-doped silicon wafer etching solution residue according to claim 1, wherein the method comprises the following steps: the SC-1 cleaning solution in the first step and the second step is a mixed solution of ammonia water, hydrogen peroxide and deionized water.
3. The method for removing the Sb-doped silicon wafer etching solution residue as claimed in claim 2, wherein: in the first step, the volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide of the SC-1 cleaning solution to deionized water is (1: 5-1): 10;
the mass percentage concentration of the ammonia water is 28%;
the mass percentage concentration of the hydrogen peroxide is 30-35%.
4. The method for removing the Sb-doped silicon wafer etching solution residue as claimed in claim 1, wherein: in the first step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
5. The method for removing the Sb-doped silicon wafer etching solution residue according to claim 1, wherein the method comprises the following steps: in the second step, the volume ratio of ammonia water and hydrogen peroxide of the SC-1 cleaning solution is 1: 1; the volume ratio of hydrogen peroxide to deionized water of the SC-1 cleaning solution is (1: 5-1): 10;
the mass percentage concentration of the ammonia water is 28 percent;
the mass percentage concentration of the hydrogen peroxide is 30-35%.
6. The method for removing the Sb-doped silicon wafer etching solution residue according to claim 1, wherein the method comprises the following steps: in the second step, the temperature of the SC-1 cleaning solution is 50-65 ℃, and the cleaning time is 3-6 min.
7. The method for removing the Sb-doped silicon wafer etching solution residue according to claim 1, wherein the method comprises the following steps: in the third step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.
8. The method for removing the Sb-doped silicon wafer etching solution residue as claimed in claim 1, wherein: in the fourth step, the temperature of the deionized water is 23 ℃, and the washing time is 3-6 min.
9. The method for removing the Sb-doped silicon wafer etching solution residue according to claim 1, wherein the method comprises the following steps: in the sixth step, the temperature of the deionized water is 35-60 ℃, and the washing time is 3-6 min.
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| JP2004356252A (en) * | 2003-05-28 | 2004-12-16 | Sumitomo Mitsubishi Silicon Corp | Method for working silicon wafer |
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| CN106000977A (en) * | 2016-08-01 | 2016-10-12 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide single chip |
| CN106711248A (en) * | 2016-12-03 | 2017-05-24 | 河北工业大学 | Method for reducing surface reflectivity of ingot-cast polycrystalline silicon wafer |
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