CN113782561A - Micro-LED display device with high brightness and high reliability - Google Patents

Micro-LED display device with high brightness and high reliability Download PDF

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Publication number
CN113782561A
CN113782561A CN202111102022.5A CN202111102022A CN113782561A CN 113782561 A CN113782561 A CN 113782561A CN 202111102022 A CN202111102022 A CN 202111102022A CN 113782561 A CN113782561 A CN 113782561A
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micro
tft
electrode
transistor
double
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CN113782561B (en
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郭伟杰
郑曦
童长栋
高玉琳
郑振耀
吕毅军
陈忠
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Xiamen University
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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Abstract

The invention discloses a high-brightness high-reliability Micro-LED display device, which comprises a double-layer wiring bearing substrate and a TFT back plate which are arranged up and down, wherein each pixel unit is provided with a Micro-LED chip and a first transistor which are separated, and the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive through hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive through hole; the TFT unit is used for gating the corresponding pixel unit, the first transistor is used for supplying power to the corresponding pixel unit, heat dissipation can be enhanced, leakage current can be reduced, current compensation can be achieved, and then Micro-LED display with high brightness, high efficiency and high reliability can be achieved.

Description

Micro-LED display device with high brightness and high reliability
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a Micro-LED display device with high brightness and high reliability.
Background
The LED has the obvious advantages of energy conservation, small volume, long service life, rich colors, reliable performance and the like. Various kinds of Micro-LED displays have attracted general attention in recent years and have become internationally recognized next generation display technologies. The Micro-LED display has the advantages that the Micro-LED chips are closely arranged into an array one by one, each Micro-LED chip is independently driven to light to emit light, the excellent display effect is achieved, flexible, transparent and high-resolution display can be achieved, and the power consumption of the Micro-LED display is only about 10% of that of a liquid crystal panel.
Each Micro-LED chip is independently driven to light, an active driving back plate is needed, and an independent control element is configured for each Micro-LED chip. Existing driving backplanes include CMOS (complementary metal oxide semiconductor) backplanes, TFT (thin film transistor) backplanes. The CMOS backboard is produced by adopting an integrated circuit wafer process, can realize a pixel pitch of 5 microns or even smaller, can realize high-resolution Micro-LED display, but has the following defects: firstly, the driving back plate is produced by adopting an integrated circuit wafer process, so that the cost is high; secondly, the wafer size is limited, and large-size display cannot be realized; thirdly, the CMOS backplane is not transparent due to its silicon-based material, and is not suitable for transparent display. The TFT backplate can realize large tracts of land production, and the base plate adopts glass, can realize transparent demonstration, but has several not enough in the aspect of: firstly, because the current of the TFT is limited, the high-brightness Micro-LED display is difficult to realize; secondly, heat emitted by the Micro-LED chip is conducted out through the TFT backboard to dissipate heat, so that the temperature of a TFT device on the TFT backboard is increased and I-V characteristic drift occurs; thirdly, the Micro-LED chip emits light to irradiate the TFT backboard, so that a TFT device on the TFT backboard generates photoproduction leakage current, and I-V characteristic drift occurs; fourthly, the TFT backboard at least needs to adopt a 2T1C framework, namely each pixel needs 1 TFT for gating, and 1 TFT for supplying power, but because the consistency of TFT production is insufficient, a complex compensation design needs to be carried out, and generally each pixel needs 4-7 TFTs, resulting in complex driving, large pixel size, limited electron mobility of the TFT, limited current supplied to the Micro-LED chip, and difficult improvement of the brightness of the display screen.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a high-brightness and high-reliability Micro-LED display device which can enhance heat dissipation, reduce leakage current and realize current compensation, so that high-brightness, high-efficiency and high-reliability Micro-LED display can be realized.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a high-brightness and high-reliability Micro-LED display device realizes display through a plurality of pixel units arranged in an array mode and comprises a double-layer wiring bearing substrate and a TFT back plate which are arranged up and down, each pixel unit is provided with a Micro-LED chip and a first transistor which are separated, the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate, and electrodes of the Micro-LED chip and electrodes of the first transistor are respectively welded on the double-layer wiring bearing substrate; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive through hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive through hole; the TFT units are used for gating the corresponding pixel units, and the first transistors are used for supplying power to the Micro-LED chips in the corresponding pixel units.
Optionally, the double-layer wiring carrier substrate is provided with VDD wiring and GND wiring; the Micro-LED chip is provided with a first electrode and a second electrode, and the first transistor is provided with a first source electrode, a first drain electrode and a first grid electrode; the first electrode is electrically connected to a VDD wiring, the second electrode is electrically connected to a first source electrode, the first gate electrode is electrically connected to the TFT unit, and the first drain electrode is electrically connected to a GND wiring.
Optionally, a first electrode pad, a second electrode pad, a source pad, a gate pad and a drain pad are arranged on the upper surface of the double-layer wiring bearing substrate; the Micro-LED chip and the first transistor are inversely arranged on the double-layer wiring bearing substrate, the first electrode, the second electrode, the first source electrode, the first drain electrode and the first grid electrode are welded with the first electrode pad, the second electrode pad, the source electrode pad, the grid electrode pad and the drain electrode pad in a one-to-one correspondence mode, and the grid electrode pad is electrically conducted with the conductive through hole.
Optionally, the TFT unit includes a second transistor structure and a capacitor structure, the second transistor structure includes a second source, a second drain and a second gate, and the second drain is electrically connected to the first gate through the conductive via; the capacitor structure is connected between the first grid and the first drain in parallel; the TFT backplate is provided with a grounding end, and the grounding end is conducted with the GND wiring.
Optionally, the double-layer wiring carrier substrate is opaque.
Optionally, the top surface and the sidewall surface of the first transistor are coated with a light-shielding packaging substrate.
Optionally, a light-shielding packaging matrix is integrally coated on the surface of the Micro-LED chip except the upper surface, the upper surface of the double-layer wiring carrying substrate and the surface of the first transistor.
Optionally, the Micro-LED chips include red light Micro-LED chips, green light Micro-LED chips, and blue light Micro-LED chips, and the corresponding pixel units are red light pixel units, green light pixel units, and blue light pixel units.
Optionally, the Micro-LED chips are all blue light Micro-LED chips, a part of the blue light Micro-LED chips form blue light pixel units, another part of the blue light Micro-LED chips form red light pixel units and green light pixel units by arranging a fluorescence conversion layer, the shading packaging substrate is provided with grooves at positions corresponding to the blue light Micro-LED chips, and the fluorescence conversion layer is arranged in the grooves.
Optionally, light emitted by the Micro-LED chip is emitted downwards, the fluorescence conversion layer is disposed between the TFT units of the TFT backplane and aligned vertically with the Micro-LED chip, the double-layer wiring carrier substrate and the TFT backplane are made of a light-transmitting material, and a transparent adhesive layer is filled between the double-layer wiring carrier substrate and the TFT backplane.
The invention has the beneficial effects that:
1) the driving framework is divided into two parts, the TFT and the separated first transistor are adopted to realize hybrid driving, the TFT is responsible for gating the pixel unit required to be driven, and the separated first transistor is responsible for supplying power to the pixel unit required to be driven. The integrity of a driving framework is kept, the large-current capacity of the first discrete transistor can be exerted, and the problem that the output current of a thin film transistor structure in a traditional pure TFT backboard is limited is solved. The power supply to the Micro-LED chip with larger current can be realized, so that high-brightness display is realized;
2) the method not only exerts the advantages of large-area production of the TFT substrate, but also avoids the problem of TFT characteristic drift. The stability of the electrical characteristics of the product is improved, and high reliability is realized;
3) the Micro-LED chip and the first transistor can be welded on the upper surface of the bearing substrate by adopting the same die bonding or mass transfer process, the process compatibility is high, the welding is stable and reliable, when the whole screen is subjected to lighting test and a certain pixel unit is found to be invalid or uneven in light emission, the Micro-LED chip and the first transistor element of the pixel unit can be conveniently replaced and repaired, and the yield is high;
4) the first transistor is welded on the upper surface of the bearing substrate by adopting a die bonding or mass transfer process, and proper BIN welding of the first transistor can be carried out according to I-V characteristic mapping of a TFT device on the TFT backboard, so that 2T1C driving characteristic parameters formed by combining the first transistor and the TFT device are good in consistency, a complex compensation circuit required by a traditional pure TFT driving backboard is avoided, the structure is simple, and the cost is low;
5) the bearing substrate is used for thermally isolating the TFT and the Micro-LED chip, so that the problem of I-V characteristic drift caused by the temperature rise of a TFT device on a TFT backboard is solved;
6) the direct bearing substrate upper surface carries out full-color pixel distribution and arranges, can conveniently realize the full-color demonstration of red, green, blue three-colour of various different pixel array mode of arranging.
Drawings
FIG. 1 is a schematic plan view of a pixel unit of a Micro-LED display device according to an embodiment, showing the connection relationship of devices in the pixel unit;
FIG. 2 is an exploded schematic view of the Micro-LED display device according to embodiments 1-2 (a cross-sectional view of a pixel unit is shown in the figure);
FIG. 3 is a schematic view of an assembly structure of the Micro-LED display device according to embodiments 1-2 (a cross-sectional view of a pixel unit is shown in the figure);
FIG. 4 is a schematic circuit diagram of a 2T1C driving architecture of the Micro-LED display device according to an embodiment;
FIG. 5 is a schematic view of a pixel cell structure of a Micro-LED display device of embodiment 3 (three pixel cells are shown in cross-section);
FIG. 6 is a schematic view of a pixel cell structure of the Micro-LED display device of embodiment 4 (three pixel cells are shown in cross section);
FIG. 7 is a schematic view of a pixel cell structure of the Micro-LED display device of example 5 (three pixel cells are shown in cross-section);
FIG. 8 is a schematic view of a pixel cell structure of the Micro-LED display device of embodiment 6 (three pixel cells are shown in cross section);
FIG. 9 is a schematic view of a pixel cell structure of a Micro-LED display device of example 7 (three pixel cells are shown in cross-section);
fig. 10 is a schematic view of a pixel unit structure of the Micro-LED display device of embodiment 8 (a cross-sectional view showing three pixel units).
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. The definitions of the top and bottom relationships of the relative elements and the front and back sides of the figures described herein are understood by those skilled in the art to refer to the relative positions of the components and thus all of the components may be flipped to present the same components and still fall within the scope of the present disclosure.
Example 1
Referring to fig. 1 to 3, the Micro-LED display device of embodiment 1 is implemented by a plurality of pixel units arranged in an array, and includes a Micro-LED chip 800, a first transistor 900, a TFT backplane 700, and a double-layer wiring carrier substrate 600; the double-layer wiring bearing substrate 600 and the TFT backboard 700 are arranged up and down, each pixel unit is provided with a Micro-LED chip 800 and a first transistor 900 which are separated, and the Micro-LED chip 800 and the first transistor 900 are arranged on the double-layer wiring bearing substrate 600. The TFT backplane 700 has a TFT unit 701 on its upper surface corresponding to each pixel unit.
The Micro-LED chip 800 is provided with a surface light emitting layer 1, a first semiconductor layer 2, a multiple quantum well layer 3, a second semiconductor layer 4, an insulating layer 5, a first electrode 6, and a second electrode 7. The surface light emitting layer 1 is an epitaxial buffer layer or an epitaxial substrate layer of the Micro-LED chip.
The first transistor 900 is provided with a transistor substrate 11, a GaN layer 12, an AlGaN layer 13, an AlN spacer layer 14, and an AlGaN barrier layer 15. As is well known, the first transistor 900 has a first source, a first drain and a first gate, and the double-layered wiring carrier substrate 600 has a first electrode pad 8, a second electrode pad 9, a source pad 17, a gate pad 18 and a drain pad 19, which are connected to the first electrode 6, the second electrode 7, the first source, the first gate and the first drain by soldering through bumps 10 in a one-to-one correspondence. The double-layered wiring carrier substrate 600 is also provided with conductive vias 20. The gate pad 18 is disposed on and electrically connected to the conductive via 20.
TFT backplate 700 is provided with second transistor structure and capacitor structure, specifically includes: the organic light emitting diode comprises a glass back plate 21, a transparent medium 22, a second grid 23, a semiconductor channel layer 24, a second source 25, a second drain 26, a TFT insulation layer 27, a storage capacitor 28, a transparent medium 29 and a transparent electrode 30, wherein the second drain 26 is electrically communicated with the transparent electrode 30, and the transparent electrode 30 is electrically communicated with the first transistor 900 through a conductive through hole 20.
Fig. 1 is a schematic plan view of a pixel unit, which is provided with a VDD wiring 31, a GND wiring 32, a Micro-LED chip 800, a first transistor 900, and a conductive via 20; the P electrode (one of the first electrode 6 and the second electrode 7) of each Micro-LED chip 800 is electrically connected to the VDD interconnection 31 through a pad, the N electrode (the other of the first electrode 6 and the second electrode 7) pad of the Micro-LED chip is electrically connected to the source pad 17 of the first transistor 800, and the first gate electrode of the first transistor 800 is electrically connected to the transparent electrode 30 of the TFT backplane 700 through the gate pad 18 and the conductive via 20, so that the first gate electrode is connected to the second drain electrode. The first drain of the first transistor is electrically connected to the GND wiring 32 (ground terminal) of the two-layer wiring support substrate 600;
the Micro-LED chip 800 and the first transistor 900 are discrete devices, and are flip-chip bonded to respective pads. The term "discrete" as used herein means that the two are independent of each other, and the replacement of one device does not affect the existence of the other device.
The TFT backplane 700 has a TFT backplane ground disposed at an edge thereof, and the TFT backplane ground is connected to the GND wiring of the double-layered wiring carrier substrate 600 through an external wire. The external lead is a flexible circuit board.
The double-layered wiring carrier substrate 600 is opaque to light. The specific material is a multilayer glass fiber copper-clad circuit board, or a flexible circuit board, or a ceramic-based copper-clad circuit board, or a silicon wafer. Photons emitted by the Micro-LED chip 800 are prevented from irradiating the TFT unit 701 to generate photon-generated carriers, dark current is avoided, and reliability is improved.
Referring to fig. 4, the present embodiment splits the driving architecture into two parts, i.e., an LED and T2 (first transistor) on a two-layer wiring carrier substrate, and a T1 and a capacitor C on a TFT backplane (part of the dashed box in fig. 1). The TFT and the discrete first transistor are adopted to realize hybrid driving, the TFT is responsible for gating the pixel unit required to be driven, and the discrete first transistor is responsible for supplying power to the pixel unit required to be driven. The advantage of large-area production of the TFT substrate is exerted, and the problem of TFT characteristic drift is avoided. The integrity of a driving framework is kept, the characteristics of large current and flexible replacement of the first discrete transistor can be exerted, and the problem that the output current of T2 in the traditional pure TFT backboard is limited is solved.
In the display device, the pixel units are arranged in an array to realize display. In the display device, there are Micro-LED chips 800 that emit visible light of three different wavelengths, green, and blue, respectively, and there are three different pixel units of red, green, and blue, respectively, according to the difference in the emission wavelength of the Micro-LED chips 800.
Preferably, the blue Micro-LED chip emits blue light around 467nm, the green Micro-LED chip emits green light around 532nm, and the green Micro-LED chip emits red light around 625 nm.
For the blue light and green light Micro-LED chip, the first semiconductor layer 11 comprises a layer of n-type doped GaN, the first semiconductor layer 11 further comprises a buffer layer, and the multiple quantum well light-emitting layer 3 is formed by a chemical general formula of AlxInyGazN (wherein, x + y + z is 1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1) with different compositions and with different thicknesses, the second semiconductor layer 4 comprises a layer of p-type doped GaN, and the second semiconductor layer 4 comprises an electron blocking layer. For a red light Micro-LED chip, the multiple quantum well light emitting layer 3 is formed by alternately stacking semiconductor layers having different compositions and a nano-scale thickness, the two semiconductor layers having a chemical general formula of AlxGayInzP (where x + y + z is 1, x is 0 or more and less than 1, y is 0 or more and less than 1, and z is 0 or more and less than 1).
The bump 10 is made of any one or more of titanium, aluminum, gold, nickel, silver and other metals. The glass back plate 21 of the TFT back plate is made of transparent materials, and can be any one of glass, sapphire, silicon carbide and the like. The transparent electrode layer 30 is made of tin-doped indium oxide.
Example two
Referring to fig. 2, in the present embodiment, the first transistor is a HEMT transistor, and is provided with a transistor substrate 11, a GaN layer 12, an AlGaN layer 13, an AlN spacer layer 14, and an AlGaN barrier layer 15. The Al content of Al and Ga in the AlGaN layer 13 is 15%, and the Ga content is 85%; the AlGaN barrier layer 14 contains 30% of Al and 70% of Ga.
The rest is the same as in example 1.
EXAMPLE III
Referring to fig. 5, in the present embodiment, the pixel unit 100, the pixel unit 200, and the pixel unit 300 may be a blue pixel unit, a green pixel unit, and a red pixel unit, respectively. In the pixel array of the display device, the outer side wall of each first transistor 900 is coated with the light-shielding packaging substrate 37, so that the first transistors 900 are shielded from light, photons emitted by the Micro-LED chip 800 are prevented from irradiating the first transistors 900 to generate photon-generated carriers, dark current is avoided, and reliability is improved.
The rest is the same as the first embodiment.
Example four
As shown in FIG. 6, the Micro-LED chips 800 of the display device are all blue light Micro-LED chips. The red pixel unit and the green pixel unit are obtained by means of fluorescence conversion.
And directly etching a pit on the surface light emitting layer of the Micro-LED chip, then adding a metal light reflecting layer 35, and arranging a transparent substrate 36 in the pit to obtain the blue light pixel unit 100.
Further, for the green and red pixel cells, a green fluorescent conversion layer 38 (containing a transparent substrate and a green fluorescent material), a red fluorescent conversion layer 39 (containing a transparent substrate and a red fluorescent material) are respectively disposed in the pits, resulting in a green pixel cell 200, a red pixel cell 300;
the rest is the same as the embodiment.
EXAMPLE five
As shown in fig. 7, pits are directly etched on the surface light emitting layer of the Micro-LED chip, then a metal light reflecting layer 35 is added, and a transparent substrate 36 is disposed in the pits, so as to obtain a blue pixel unit 100, a green pixel unit 200, and a red pixel unit 300.
The rest is the same as the embodiment.
EXAMPLE six
Referring to fig. 8, the upper surface of the double-layered wiring carrier substrate 600 is covered with a light-shielding encapsulation matrix 37 except for the region corresponding to the top surface of the Micro-LED chip 800. A coherent light-shielding encapsulation matrix 37 is formed. That is, the package substrate 37 covers the surface of the first transistor 900, and also integrally covers the exposed upper surface of the dual-layer wiring carrier substrate 600 and the surface of the Micro-LED chip 800 outside the top surface area, so that the contrast of the display device is improved, the Micro-LED chip is protected from water and corrosion, and the reliability is improved.
The rest is the same as the embodiment.
EXAMPLE seven
Referring to fig. 9, in the embodiment 6, a light shielding packaging substrate 37 is formed with a groove at a position corresponding to the top surface of the Micro-LED chip 800.
For the blue pixel cell, the transparent substrate 36 is disposed in the groove of the Micro-LED chip, resulting in the blue pixel cell 100. For the green and red pixel cells, a green fluorescent conversion layer 38 (containing a transparent substrate and a green fluorescent material) and a red fluorescent conversion layer 39 (containing a transparent substrate and a red fluorescent material) are respectively disposed in the pits, resulting in a green pixel cell 200 and a red pixel cell 300.
The rest is the same as in example six.
Example eight
As shown in fig. 10, the double-layered wiring carrier substrate 600 is a transparent substrate made of glass.
The Micro-LED chip 800 firstly adopts the transparent adhesive layer 810 to coat all the side walls, then the whole surface of the double-layer wiring bearing substrate 600 is covered with the reflective packaging layer 820, and light rays emitted by the Micro-LED chip 800 are emitted from the lower surface of the transparent double-layer wiring bearing substrate 600.
The Micro-LED chips 800 all adopt blue light Micro-LED chips.
Fluorescent material regions are arranged between adjacent TFT units 701 on the TFT backboard 700, the fluorescent material regions comprise dams 830, the dams 830 form a groove, and fluorescent conversion materials are filled in the groove. For the blue pixel unit, a transparent substrate 840 is arranged in the groove of the Micro-LED chip to obtain the blue pixel unit. For the green and red pixel units, a green fluorescence conversion layer 841 (containing a transparent substrate and a green fluorescent material) and a red fluorescence conversion layer 842 (containing a transparent substrate and a red fluorescent material) are respectively arranged in the grooves, so that a green pixel unit and a red pixel unit are respectively obtained.
A transparent adhesive layer 850 is filled between the upper surface of the TFT backplane 700 and the lower surface of the dual-layer wiring carrier substrate 600.
The light emitted from the Micro-LED chip 800 sequentially passes through the transparent double-layered wiring carrier substrate 600, the transparent adhesive layer 850, the transparent substrate 840 (or the green fluorescence conversion layer 841 or the red fluorescence conversion layer 842), and the glass backplane 21, and exits from the lower side of the glass backplane 21.
The rest is the same as the first embodiment.
A significant advantage of this solution is that quantum fluorescent materials can be used. Quantum dots are ideal fluorescent conversion materials for realizing high color gamut display, but the fatal defect of the fluorescent conversion materials is that encapsulation protection for isolating water and oxygen is required, and once water and oxygen in air permeate into the quantum dots from a protective layer and contact the quantum dots, the quantum dots rapidly undergo fluorescence quenching and cannot emit light. The conventional polymer coating cannot completely isolate the water and oxygen permeation in the air, and the water and oxygen permeation can be caused to a certain degree. Glass is an all-inorganic material, and is the most ideal water-oxygen barrier material. The green fluorescence conversion layer 841 and the red fluorescence conversion layer 842 are sealed between the double-layer wiring carrier substrate 600 and the glass back plate 21, so that the best water and oxygen isolation sealing is realized, and the green fluorescence conversion layer 841 and the red fluorescence conversion layer 842 can dissipate heat by means of the glass back plate 21. The high-reliability quantum dot fluorescence conversion Micro-LED display is realized.
The green fluorescent material is InP quantum dots, CdSe/ZnS core-shell structure quantum dots, perovskite structure CsPbX3(X ═ Cl, Br, I) any one of quantum dots; eu (Eu)2+Doped with beta-Sialon, Eu2+Doping with Li2CaSiO4Any one of the above; or a combination of any two or three of the above.
The red fluorescent material is rare earth ion Eu2+Doped CaAlSiN3、Eu2+Doped with Ca0.8Li0.2Al0.8Si1.2N3、Eu2+Doped (Ca, Sr, Ba)2Si5N8:Eu2+Any one of the above; InP quantum dot, CdSe/ZnS core-shell structure quantum dot, perovskite structure CsPbX3(X ═ Cl, Br, I) any one of quantum dots; mn4+Doping with K2SiF6Phosphor powder, Mn4+Doping with K2GeF6Phosphor powder, Mn4+Doping with K2TiF6Any one of fluorescent powder; pr (Pr) of3+Doping YAG fluorescent powder; or a combination of any two or three of the above.
The above embodiments are only used to further illustrate a Micro-LED display device with high brightness and high reliability, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention fall within the protection scope of the technical solution of the present invention.

Claims (10)

1. The utility model provides a Micro-LED display device of high luminance high reliability, realizes showing through a plurality of pixel cell that array was arranged which characterized in that: the pixel unit comprises a double-layer wiring bearing substrate and a TFT (thin film transistor) back plate which are arranged up and down, wherein each pixel unit is provided with a Micro-LED chip and a first transistor which are separated from each other, the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate, and an electrode of the Micro-LED chip and an electrode of the first transistor are respectively welded on the double-layer wiring bearing substrate; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive through hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive through hole; the TFT units are used for gating the corresponding pixel units, and the first transistors are used for supplying power to the Micro-LED chips in the corresponding pixel units.
2. A Micro-LED display device according to claim 1, wherein: the double-layer wiring bearing substrate is provided with VDD wiring and GND wiring; the Micro-LED chip is provided with a first electrode and a second electrode, and the first transistor is provided with a first source electrode, a first drain electrode and a first grid electrode; the first electrode is electrically connected to a VDD wiring, the second electrode is electrically connected to a first source electrode, the first gate electrode is electrically connected to the TFT unit, and the first drain electrode is electrically connected to a GND wiring.
3. A Micro-LED display device according to claim 2, characterized in that: the upper surface of the double-layer wiring bearing substrate is provided with a first electrode pad, a second electrode pad, a source electrode pad, a grid electrode pad and a drain electrode pad; the Micro-LED chip and the first transistor are inversely arranged on the double-layer wiring bearing substrate, the first electrode, the second electrode, the first source electrode, the first drain electrode and the first grid electrode are welded with the first electrode pad, the second electrode pad, the source electrode pad, the grid electrode pad and the drain electrode pad in a one-to-one correspondence mode, and the grid electrode pad is electrically conducted with the conductive through hole.
4. A Micro-LED display device according to claim 2, characterized in that: the TFT unit comprises a second transistor structure and a capacitor structure, the second transistor structure comprises a second source electrode, a second drain electrode and a second grid electrode, and the second drain electrode is electrically connected with the first grid electrode through the conductive through hole; the capacitor structure is connected between the first grid and the first drain in parallel; the TFT backplate is provided with a grounding end, and the grounding end is conducted with the GND wiring.
5. A Micro-LED display device according to claim 1, wherein: the double-layer wiring bearing substrate is opaque.
6. A Micro-LED display device according to claim 1, wherein: the top surface and the side wall surface of the first transistor are coated with a light-shielding packaging substrate.
7. A Micro-LED display device according to claim 1, wherein: and a shading packaging matrix is integrally coated on the surface except the upper surface of the Micro-LED chip, the upper surface of the double-layer wiring bearing substrate and the surface of the first transistor.
8. A Micro-LED display device according to claim 1, wherein: the Micro-LED chips comprise red light Micro-LED chips, green light Micro-LED chips and blue light Micro-LED chips, and the corresponding pixel units are red light pixel units, green light pixel units and blue light pixel units.
9. A Micro-LED display device according to claim 7, characterized in that: the light shading packaging substrate is characterized in that the Micro-LED chips are all blue light Micro-LED chips, part of the blue light Micro-LED chips form blue light pixel units, the other part of the blue light Micro-LED chips form red light pixel units and green light pixel units by arranging a fluorescence conversion layer, grooves are formed in the positions, corresponding to the blue light Micro-LED chips, of the light shading packaging substrate, and the fluorescence conversion layer is arranged in the grooves.
10. A Micro-LED display device according to claim 1, wherein: the light emitted by the Micro-LED chip is emitted downwards, the fluorescence conversion layer is arranged between the TFT units of the TFT back plate and is vertically aligned with the Micro-LED chip, the double-layer wiring bearing substrate and the TFT back plate are made of light-transmitting materials, and a transparent bonding layer is filled between the double-layer wiring bearing substrate and the TFT back plate.
CN202111102022.5A 2021-09-18 2021-09-18 Micro-LED display device with high brightness and high reliability Active CN113782561B (en)

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