CN113782388B - Relay switch buffer circuit applied to power industry products - Google Patents
Relay switch buffer circuit applied to power industry products Download PDFInfo
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- CN113782388B CN113782388B CN202110038508.0A CN202110038508A CN113782388B CN 113782388 B CN113782388 B CN 113782388B CN 202110038508 A CN202110038508 A CN 202110038508A CN 113782388 B CN113782388 B CN 113782388B
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- relay
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- mos tube
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- 239000003990 capacitor Substances 0.000 claims description 28
- 230000001960 triggered effect Effects 0.000 claims description 5
- 238000010891 electric arc Methods 0.000 claims description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 230000003111 delayed effect Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
- H01H47/18—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay for introducing delay in the operation of the relay
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- Electronic Switches (AREA)
- Relay Circuits (AREA)
Abstract
The invention discloses a relay switch buffer circuit applied to products in the power industry. The relay switch buffer unit bypasses the strong electric contact of the relay, the buffer signal is generated by the buffer signal generating unit, and the relay is delayed to be closed or delayed to be opened by the relay delay switch unit. The relay switch buffer unit is in a closed state at the moment when the relay strong electric contact is closed or opened. The whole circuit does not adopt energy consumption elements such as a thermistor and the like as a current limiting device, but utilizes the switching characteristic of an MOS tube to reduce the voltage at two ends of a strong electric contact of the relay to be close to zero volt, thereby truly realizing zero-voltage on and off, effectively preventing arcing and contact adhesion phenomena occurring in the switching state of the relay, and effectively prolonging the service life of the relay.
Description
Technical Field
The invention belongs to the field of power management, and particularly relates to a relay switch buffer circuit applied to products in the power industry.
Background
In a power system, input and output are often connected through a relay, particularly in high-power occasions, but arc is easy to generate at contacts of the relay in the process of closing and opening the relay, the arc has a thermal effect, so that contact ablation and bonding are easy to cause, the service life of the relay is shortened, electromagnetic radiation is generated in the process of generating the arc, and surrounding equipment is disturbed. Therefore, it is necessary to add a buffer function to the relay used in high power applications to extinguish the arc.
Disclosure of Invention
The invention aims to provide a relay switch buffer circuit applied to products in the power industry, which is used for inhibiting impact current and impact voltage generated in the closing or opening process of a relay, effectively preventing arcing and contact adhesion phenomena in the switching state of the relay, and prolonging the service life of the relay.
In order to achieve the above purpose, the invention adopts the following technical scheme: a relay switch buffer circuit applied to products in the power industry comprises a buffer signal generating unit, a relay switch buffer unit, a relay switch control unit and a relay.
The buffer signal generating unit comprises resistors R1, R2, R3 and R4, triodes T1 and T2, capacitors C1 and C2, diodes D1 and D2, an NOT gate V1 and an NOT gate V2, a control signal CTRL-IN is connected with one end of the resistor R1, the other end of the resistor R1 is connected with the bases of the triodes T1 and T2, the collector of the triode T1 is connected with one end of the resistor R3 and the cathode of the diode D1, the emitter of the triode T1 is connected with one end of the triode T2, the capacitors C1 and C2, one end of the resistor R2 is connected with the base of the triode T2, the other end of the capacitor C1 is connected with the collector of the triode T2 and the input terminal VIN, the other end of the capacitor C1 is connected with one end of the resistor R3 and the anode of the diode D1 and serves as one input signal of the NOT gate V2, one end of the resistor R4 and the anode of the diode D2 are connected with the upper end of the resistor R4 and the cathode of the diode D2 as the other input signal of the NOT gate V1;
the relay switch buffer unit comprises resistors R5 and R6, a capacitor C3 and a MOS tube VT1, one end of the resistor R5 is connected with the upper ends of the resistor R6 and the capacitor C3 and the grid electrode of the MOS tube VT1, an input terminal-VIN is connected with the lower ends of the resistor R6 and the capacitor C3 and the source electrode of the MOS tube VT1, and the drain electrode of the MOS tube VT1 is connected to the output;
the relay switch delay unit comprises resistors R7 and R8, a capacitor C4 and a MOS tube VT2, one end of the resistor R7 is connected to a control signal CTRL-IN, the other end of the resistor R7 is connected to the upper ends of the capacitor C4 and the resistor R8 and the grid electrode of the MOS tube VT2, the lower end of the capacitor C4 and the lower end of the resistor R8 are connected to the source electrode of the MOS tube VT2, the source electrode of the MOS tube VT2 is connected with an input terminal-VIN, and the drain electrode is connected with a control contact of the relay.
Further, when the logic of the control signal of the relay is changed, the buffer signal generating unit is triggered to generate a buffer signal, so that the relay switch buffer unit is in a closed state within a period of time, and the relay switch buffer unit is in a closed state when the strong electric contact of the relay is closed or opened, so that the relay is ensured to be in a zero-voltage state in both closing and opening states, and arc discharge and contact adhesion in the relay switch state are prevented. The relay switch buffer unit bypasses the relay switch contacts, when a relay switch control signal arrives, the buffer signal generating unit and the relay delay switch unit are triggered, the buffer signal generating unit generates a buffer signal in the time of relay delay closing or delay opening, and the voltage at two ends of the relay strong electric contact is reduced to be close to zero, so that the relay is closed and opened.
The beneficial effects of the invention are as follows: the contact adhesion phenomenon caused by the fact that the relay is opened and closed under a heavy current load is solved, the arc discharge and contact adhesion phenomenon generated when the relay is sucked and disconnected are solved, and the service life of the relay is prolonged. Zero voltage on and off of the relay is realized through the control logic. The protection reliability is improved, and the circuit operation efficiency is improved.
Drawings
FIG. 1 is a block diagram of a circuit configuration of the present invention;
FIG. 2 is a schematic circuit diagram of the present invention;
FIG. 3 is a timing diagram of the control signals according to the present invention.
Detailed Description
The relay switch buffer circuit comprises a relay, a relay switch buffer unit, a relay delay switch unit and a buffer signal generating unit, wherein a control signal is connected with the buffer signal generating unit and the relay delay switch unit, and the other end of the buffer signal generating unit is connected with the relay switch buffer unit.
When the control signal CTRL-IN passes through the buffer signal generating unit, the buffer signal generating unit is triggered to generate a high-level pulse at each level transition time of the control signal CTRL-IN. The specific principle analysis is that when CTRL-IN is at low level, the point A is also at low level, the point B is at high level, the point C is at low level, the point D is at high level, and the point B and the point D can obtain the point E to be at low level after logic conversion of the NAND gate. When CTRL-IN jumps from low level to high level, namely, a rising edge occurs, the potential of the point A jumps from low level to high level, the potential of the point B is clamped at VCC through a diode D1, a capacitor C1 is rapidly discharged through the diode, and the potential jump occurs at the point C when the potential of the point A jumps due to the fact that the voltage of the capacitor C2 is 0, the point C is changed from low level to high level, the point D is changed from high level to low level, and the point E, which is logically and non-compared by B and D, is high level. As the capacitor C2 is charged through the resistor R4, the voltage thereon continuously increases the voltage at point CContinuously decreasing, when the voltage at point C decreases to the logic judgment threshold V of NOT gate V1 OL Then the D point potential is changed from low level to high level, and the E point potential is changed from high level to low level. When CTRL-IN jumps from high level to low level, namely, a falling edge occurs, the potential of the point A jumps from high level to low level, the potential of the point C is clamped at-Vin through a diode D2, the potential of the point D is still at high level, a capacitor C2 is rapidly discharged through the diode D2, and because the voltage on the capacitor C1 is 0, the potential jump occurs at the point B when the potential jump occurs at the point A, the potential jump is changed from high level to low level, and the point B and the point D are logically and NAND-compared to obtain the point E as high level. With the capacitor C1 charged through the resistor R3, the voltage at the point B is increased continuously, when the voltage at the point B is increased to the logic judgment threshold V of the NAND gate V2 OH After that, the E point potential is changed from the high level to the low level.
Therefore, when the potential jump of CTRL-IN, namely the rising edge or the falling edge, is shown IN fig. 3, CTRL-OUT can continuously have high level IN a period of time, and the MOS tube VT1 is controlled, so that the soft switching control of the relay is realized. The duration can be adjusted by the time constant of the corresponding resistor-capacitor.
When the control signal CTRL-IN passes through the relay delay switch unit, the switching waveform of the MOS transistor VT2 is always delayed for a period of time than the control signal CTRL-IN, and the delay time can be adjusted by adjusting the parameters of the resistor R8 and the capacitor C4. When CTRL-IN is changed from low level to high level, the MOS tube VT2 is turned on after the control signal CTRL-IN is delayed, when the MOS tube VT2 is turned on, the MOS tube VT1 is already IN an on state, so that zero voltage on of the relay can be realized, when CTRL-IN is changed from high level to low level, the MOS tube VT2 is turned off IN a delayed manner, and when the MOS tube VT2 is turned off, the MOS tube VT1 is still IN an on state, so that zero voltage off of the relay can be realized, and arcing and discharging phenomena can not be generated when the relay is turned on and off.
The key point of the invention is that when the logic of the control signal of the relay changes, the buffer signal generating unit is triggered to generate a buffer signal, so that the buffer unit of the relay switch is in a closed state in a period of time, and the buffer unit of the relay switch is in a closed state when the strong electric contact of the relay is closed or opened, thereby ensuring that the relay is in a zero-voltage state when the relay is closed or opened, effectively preventing arcing and contact adhesion phenomena in the relay switch state, and greatly prolonging the service life of the relay.
Claims (1)
1. Be applied to relay switch snubber circuit of electric power industry product, its characterized in that includes buffer signal generation unit, relay switch snubber unit, relay switch control unit, relay, wherein:
the buffer signal generating unit comprises resistors R1, R2, R3 and R4, triodes T1 and T2, capacitors C1 and C2, diodes D1 and D2, an NOT gate V1 and an NOT gate V2, a control signal CTRL-IN is connected with one end of the resistor R1, the other end of the resistor R1 is connected with the bases of the triodes T1 and T2, the collector of the triode T1 is connected with one end of the resistor R3 and the cathode of the diode D1, the emitter of the triode T1 is connected with one end of the triode T2, the capacitors C1 and C2, one end of the resistor R2 is connected with the base of the triode T2, the other end of the capacitor C1 is connected with the collector of the triode T2 and serves as an input signal of the NOT gate V2, one end of the resistor R4 and the anode of the diode D2 are connected with the collector of the triode T2, the other end of the capacitor C2 is connected with the other end of the resistor R4 and the cathode of the diode D2 as an output signal of the NOT gate V1;
the relay switch buffer unit comprises resistors R5 and R6, a capacitor C3 and a MOS tube VT1, one end of the resistor R5 is connected with the upper ends of the resistor R6 and the capacitor C3 and the grid electrode of the MOS tube VT1, an input terminal-VIN is connected with the lower ends of the resistor R6 and the capacitor C3 and the source electrode of the MOS tube VT1, and the drain electrode of the MOS tube VT1 is connected to the output;
the relay switch delay unit comprises resistors R7 and R8, a capacitor C4 and a MOS tube VT2, one end of the resistor R7 is connected to a control signal CTRL-IN, the other end of the resistor R7 is connected to the upper ends of the capacitor C4 and the resistor R8 and the grid electrode of the MOS tube VT2, the lower end of the capacitor C4 and the lower end of the resistor R8 are connected to the source electrode of the MOS tube VT2, the source electrode of the MOS tube VT2 is connected with an input terminal-VIN, and the drain electrode is connected with a control contact of the relay;
when the logic of the control signal of the relay is changed, the buffer signal generating unit is triggered to generate a buffer signal, so that the relay switch buffer unit is in a closed state in a period of time, and the relay switch buffer unit is in a closed state when the strong electric contact of the relay is closed or opened, so that the relay is ensured to be in a zero-voltage state in both closing and opening states, and arc discharge and contact adhesion in the relay switch state are prevented.
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CN202110038508.0A CN113782388B (en) | 2021-01-12 | 2021-01-12 | Relay switch buffer circuit applied to power industry products |
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CN202110038508.0A CN113782388B (en) | 2021-01-12 | 2021-01-12 | Relay switch buffer circuit applied to power industry products |
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CN113782388B true CN113782388B (en) | 2024-03-12 |
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CN114743831B (en) * | 2022-03-30 | 2024-01-02 | 中国船舶重工集团公司第七0七研究所九江分部 | Relay control enabling circuit |
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JP2002330538A (en) * | 2001-04-27 | 2002-11-15 | Sony Corp | Electronic equipment |
CN201949443U (en) * | 2011-02-18 | 2011-08-31 | 李永林 | External embedded photoelectric detection drip infusion controller |
CN202372616U (en) * | 2011-11-25 | 2012-08-08 | 比亚迪股份有限公司 | Signal fault detection circuit |
CN202741893U (en) * | 2012-07-09 | 2013-02-20 | 上海米勒焊接设备有限公司 | Control signal self-locking circuit of electric welding machine |
CN203859066U (en) * | 2014-02-28 | 2014-10-01 | 北京谊安医疗***股份有限公司 | Naesthesia machine power relay capacitive load contact protection circuit |
CN205159219U (en) * | 2015-12-09 | 2016-04-13 | 浙江绍兴苏泊尔生活电器有限公司 | Control circuit for controlling relay and food processor |
CN108790895A (en) * | 2018-06-21 | 2018-11-13 | 深圳市核达中远通电源技术股份有限公司 | A kind of structure and control method of alternating-current charging pile that opening control based on relay zero |
CN110504852A (en) * | 2019-09-14 | 2019-11-26 | 浙江大学 | A kind of the single-phase soft-switching charger topology and its modulator approach of decoupling with voltage |
JP2020141487A (en) * | 2019-02-28 | 2020-09-03 | 株式会社富士通ゼネラル | Power supply device |
CN211830731U (en) * | 2020-02-18 | 2020-10-30 | 天津亚东智鑫科技有限公司 | Arc extinction circuit of contact switch |
-
2021
- 2021-01-12 CN CN202110038508.0A patent/CN113782388B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002330538A (en) * | 2001-04-27 | 2002-11-15 | Sony Corp | Electronic equipment |
CN201949443U (en) * | 2011-02-18 | 2011-08-31 | 李永林 | External embedded photoelectric detection drip infusion controller |
CN202372616U (en) * | 2011-11-25 | 2012-08-08 | 比亚迪股份有限公司 | Signal fault detection circuit |
CN202741893U (en) * | 2012-07-09 | 2013-02-20 | 上海米勒焊接设备有限公司 | Control signal self-locking circuit of electric welding machine |
CN203859066U (en) * | 2014-02-28 | 2014-10-01 | 北京谊安医疗***股份有限公司 | Naesthesia machine power relay capacitive load contact protection circuit |
CN205159219U (en) * | 2015-12-09 | 2016-04-13 | 浙江绍兴苏泊尔生活电器有限公司 | Control circuit for controlling relay and food processor |
CN108790895A (en) * | 2018-06-21 | 2018-11-13 | 深圳市核达中远通电源技术股份有限公司 | A kind of structure and control method of alternating-current charging pile that opening control based on relay zero |
JP2020141487A (en) * | 2019-02-28 | 2020-09-03 | 株式会社富士通ゼネラル | Power supply device |
CN110504852A (en) * | 2019-09-14 | 2019-11-26 | 浙江大学 | A kind of the single-phase soft-switching charger topology and its modulator approach of decoupling with voltage |
CN211830731U (en) * | 2020-02-18 | 2020-10-30 | 天津亚东智鑫科技有限公司 | Arc extinction circuit of contact switch |
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