CN113774351A - Magnetron sputtering coating chamber, coating machine and coating method - Google Patents

Magnetron sputtering coating chamber, coating machine and coating method Download PDF

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CN113774351A
CN113774351A CN202111316908.XA CN202111316908A CN113774351A CN 113774351 A CN113774351 A CN 113774351A CN 202111316908 A CN202111316908 A CN 202111316908A CN 113774351 A CN113774351 A CN 113774351A
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magnetron
group
magnetrons
coating
magnetic field
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CN113774351B (en
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谭志
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Vitalink Industry Shenzhen Co ltd
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Wuhan Zhongwei Chuangfa Industrial Research Institute Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a magnetron sputtering coating chamber, a coating machine and a coating method. The magnetron sputtering coating cavity comprises a coating cover, a sample stage and a plurality of magnetron groups distributed from outside to inside. The magnetron groups are provided with even number of magnetrons, the number of the magnetrons in the magnetron group of the 1 st magnetron group is not less than 4, the number of the magnetrons in the magnetron group of the 2 nd magnetron group is not less than 2, the magnetrons comprise an inner magnet and two outer magnets positioned on two sides of the inner magnet, and the polarity of the inner magnet is opposite to that of the outer magnets. The polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same. At the moment, the magnetic force lines of the magnetron in the 2 nd magnetron group extend to the periphery and are bound by the magnetic force lines of the magnetron in the 1 st magnetron group, so that the sputtering depth of the plasma can be effectively improved, and the uniformity of the coating thickness on the surface of the large-size substrate is further improved.

Description

Magnetron sputtering coating chamber, coating machine and coating method
Technical Field
The invention relates to the technical field of coating, in particular to a magnetron sputtering coating chamber, a coating machine and a coating method.
Background
As a film coating mode, magnetron sputtering is widely applied due to the advantages of strong coating adhesion, easy control and the like. The coating principle is that substances on the surface of a target material are knocked out by sputtering ions, and the knocked-out substances are deposited on a base material to be coated, so that a coating is formed on the surface of the base material to be coated.
In the conventional magnetron sputtering coating, a coating with better performance can be obtained for a substrate with smaller size. However, as the speed of product replacement is continuously increased, the small size of the substrate is gradually difficult to meet the increasing consumer demand of consumers. However, when a large-sized substrate is coated by conventional magnetron sputtering, the uniformity of the thickness of the coating formed on the surface of the substrate tends to be poor.
Disclosure of Invention
Therefore, a magnetron sputtering chamber capable of effectively improving the thickness uniformity of a large-size substrate coating, a coating machine comprising the magnetron sputtering coating chamber and a coating method adopting the coating machine are needed to be provided.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a magnetron sputtering coating cavity comprises a coating cover, a sample stage and a plurality of magnetron groups; the sample stage and the magnetron groups are positioned in the coating cover, and the sample stage is arranged between two adjacent magnetron groups;
in the direction from outside to inside, the multiple magnetron groups are divided into a 1 st magnetron group and a 2 nd magnetron group … … mth magnetron group, and m is an integer more than or equal to 2;
wherein the 1 st magnetron group has a1Magnetron, … … the 2 nd p +1 th magnetron group has axA magnetron, p is an integer not less than 0, x is an integer not less than 1, a1、……axIs an even number, a1≥4；
The 2 nd magnetron group has b1Individual magnetrons, … … group of 2q magnetrons having byA magnetron, q is an integer not less than 1, y is an integer not less than 1, b1、……byIs an even number, b1≥2；
The magnetrons in the 1 st magnetron group are distributed around the center of the coating cover, and the magnetrons in the 2 nd magnetron group are distributed around the center of the coating cover; the magnetron comprises an inner magnet and two outer magnets positioned on two sides of the inner magnet, wherein the polarity of the inner magnet is opposite to that of the outer magnets; the polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same.
In one embodiment, m is an even number ≧ 2.
In one embodiment, axNot less than 4; and/or, by≥4。
In one embodiment, the magnetic field intensity of the outer magnet of the magnetron in the 2p +1 magnetron group is larger than or equal to that of the inner magnet; and/or the presence of a gas in the gas,
the magnetic field intensity of the outer magnet of the magnetron in the 2q magnetron group is larger than that of the inner magnet.
In one embodiment, the polarities of the outer magnets of two adjacent magnetrons in the 2p + 1-th magnetron group are opposite; and/or the presence of a gas in the gas,
the polarities of the outer magnets of two adjacent magnetrons in the 2q magnetron group are the same.
In one embodiment, the magnetrons in each magnetron group are distributed around the center of the coating mask.
In one embodiment, the number of magnetrons in each magnetron group is equal.
In one embodiment, the number of magnetrons in each magnetron group decreases in the outer-to-inner direction.
A coating machine comprises a plurality of targets and the magnetron sputtering coating chamber in any embodiment, wherein the targets correspond to the magnetrons one by one.
A coating method is adopted, and comprises the following steps:
placing a substrate to be coated on the sample table;
forming a back vacuum in the coating mask;
introducing gas capable of generating glow discharge into the coating cover;
and applying coating power to the target and applying coating bias to the substrate to be coated.
The magnetron sputtering coating cavity comprises a coating cover, a sample stage and a plurality of magnetron groups distributed from outside to inside. The sample stage and the magnetron groups are both positioned in the coating cover, and the sample stage is arranged between the two adjacent magnetron groups. Each magnetron group is provided with an even number of magnetrons, the number of the magnetrons in the 1 st magnetron group is more than or equal to 4, the number of the magnetrons in the 2 nd magnetron group is more than or equal to 2, each magnetron comprises an inner magnet and two outer magnets positioned at two sides of the inner magnet, and the polarity of the inner magnet is opposite to that of the outer magnets. The polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same. At the moment, the magnetic force lines of the magnetron in the 2 nd magnetron group extend to the periphery and are bound by the magnetic force lines of the magnetron in the 1 st magnetron group, so that the sputtering depth of the plasma can be effectively improved, and the uniformity of the coating thickness on the surface of the large-size substrate is further improved.
Drawings
FIG. 1 is a schematic diagram of a magnetron in a magnetron group according to an embodiment of the invention;
FIG. 2 is a simplified structural diagram of a magnetron in a magnetron group according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a magnetron sputtering coating chamber according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of a magnetron sputtering coating chamber in comparative example 1 of the present invention;
FIG. 5 is a schematic structural view of a magnetron sputtering coating chamber in comparative example 2 of the present invention;
FIG. 6 is a schematic view of a test point on a substrate when the thickness and hardness of a plated layer according to the present invention are tested.
The notation in the figure is:
100. a magnetron sputtering coating chamber; 200. a target material; 300. magnetic lines of force; 400. a magnetron; 401. an inner magnet; 402. an outer magnet; 500. a magnet fixing seat; 600. a target cover; 700. coating a film cover; 800. a sample stage; 900. an electron confinement region formed by the outer closed magnetic field; 901. the inner layer is an electron-bound region formed by a non-closed magnetic field.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the aforementioned objects, features and advantages of the invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It is understood that "N" and "S" in the present invention represent polarities of the magnets, respectively, while "N" and "S" represent opposite polarities.
Referring to fig. 1, a schematic diagram of two magnetrons according to an embodiment of the invention is shown. Specifically, referring to fig. 1 (a), a rectangular target is shown. The inner magnet 401 and the outer magnets 402 located at both sides thereof are fixed on the rectangular magnet holder 500, the target 200 is located on the magnet, and a part of the magnetic lines of force 300 is shown above the target 200. Further, as a characterization of the magnetron 400, referring to fig. 1 (b), the magnetron 400 includes an inner magnet 401 and two outer magnets 402 located at both sides of the inner magnet 401, and the magnetron has a rectangular parallelepiped shape.
Referring to fig. 1 (c), a cylindrical target is shown. The inner magnet 401 and the outer magnets 402 located at both sides thereof are fixed on a circular magnet fixing seat 500, the target 200 is located on the magnet, a target cover 600 is arranged on the outer surface of the target 200, and a part of magnetic lines of force 300 is shown above the target 200. Further, as a characterization of the magnetron 400, referring to fig. 1 (d), the magnetron 400 includes an inner magnet 401 and two outer magnets 402 disposed at both sides of the inner magnet 401, and the magnetron is cylindrical.
Referring to fig. 2, the positional relationship between the rectangular parallelepiped magnetron and the cylindrical magnetron is further simplified in fig. 2. In fig. 2, (a) shows a schematic view of two rectangular parallelepiped magnetrons arranged to face each other, and a closed magnetic field is formed between the two magnetrons. Fig. 2 (b) shows a schematic diagram of two rectangular parallelepiped magnetrons disposed adjacently, in which case a magnetic field bridging the two magnetrons can be formed. Fig. 2 (c) shows a schematic diagram of two cylindrical magnetrons arranged in a facing relationship, with a closed magnetic field formed between the two magnetrons. Fig. 2 (d) shows a schematic diagram of two cylindrical magnetrons arranged adjacently, in which case a magnetic field bridging the two magnetrons can be formed. As can be seen from fig. 2 (a) - (d), the way and principle of binding electrons of the two magnetrons are consistent whether they are directly opposite or adjacent in relative position. In this regard, fig. 2 (e) shows the arrangement of two magnetrons, wherein the two magnetrons may be both rectangular magnetrons or both cylindrical magnetrons. In addition, in the actual installation position of the actual magnetron, the adjacent arrangement or the relative arrangement of the two magnetrons can be characterized by the form shown in fig. 2 (e).
Referring to FIG. 3, a magnetron sputter coating chamber 100 is provided according to one embodiment of the present invention. The magnetron sputtering coating chamber 100 comprises a coating cover 700, a sample stage 800 and a plurality of magnetron groups; the sample stage and the multiple magnetron groups are both positioned in the coating cover, and the sample stage is arranged between the two adjacent magnetron groups. In the direction from outside to inside, the multiple magnetron groups are divided into a 1 st magnetron group and a 2 nd magnetron group … … mth magnetron group, and m is an integer more than or equal to 2; wherein the 1 st magnetron group has a1Magnetron, … … the 2 nd p +1 th magnetron group has axA magnetron, p is an integer not less than 0, x is an integer not less than 1, a1、……axIs an even number, a1Not less than 4. The 2 nd magnetron group has b1Individual magnetrons, … … group of 2q magnetrons having byA magnetron, q is an integer not less than 1, y is an integer not less than 1, b1、……byIs an even number, b1Not less than 2. The magnetrons in the 1 st magnetron group are distributed around the center of the coating cover, and the magnetrons in the 2 nd magnetron group are distributed around the center of the coating cover; the magnetron 400 includes an inner magnet and two outer magnets positioned at both sides of the inner magnet, the polarity of the inner magnet is opposite to that of the outer magnets; the polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same.
In the magnetron sputtering coating chamber of the embodiment, the sample stage 800 and a plurality of magnetron groups are both located inside the coating cover 700, and the sample stage 800 is arranged between two adjacent magnetron groups. The magnetron groups are provided with even number of magnetrons, the number of the magnetrons in the magnetron group of the 1 st magnetron group is not less than 4, the number of the magnetrons in the magnetron group of the 2 nd magnetron group is not less than 2, the magnetrons comprise an inner magnet and two outer magnets positioned on two sides of the inner magnet, and the polarity of the inner magnet is opposite to that of the outer magnets. The polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same. At this time, magnetic lines of force of the magnetron in the 2 nd magnetron group extend to the periphery to form an electron bound region 901 formed by the inner layer non-closed magnetic field, and are bound by magnetic lines of force of the magnetron in the 1 st magnetron group (the magnetic lines of force of the magnetron in the 1 st magnetron group form an electron bound region 900 formed by the outer layer closed magnetic field), so that the sputtering depth of plasma can be effectively improved, and the uniformity of the coating thickness on the surface of the large-size substrate is further improved.
Among substrates subjected to magnetron sputtering, substrates having a length and width of more than 60mm × 60mm are considered to be large-sized substrates. The traditional magnetron sputtering method is easy to cause the problem of uneven coating thickness in the coating process of large-size substrates.
It is understood that the plurality of magnetron groups are divided into a 1 st magnetron group and a 2 nd magnetron group … … mth magnetron group in the outer-to-inner direction. At this time, the 1 st magnetron group represents the outermost magnetron group, the 2 nd magnetron group represents the next outermost magnetron group, and so on.
It is understood that the outer magnet represents magnets at both ends of the magnetron and the inner magnet represents a magnet in the middle of the magnetron. The magnetron shown in this embodiment includes an inner magnet and two outer magnets, the outer magnets having opposite polarity to the inner magnet. In practical designs, one or more magnets may also be disposed between the inner and outer magnets.
In one specific example, m is an even number ≧ 2. At this time, on the arrangement mode of the magnetron groups, one or more groups of magnetron groups distributed in the form of a "1 st magnetron group-a 2 nd magnetron group" can be formed.
Further, axNot less than 4; and/or, byNot less than 4. In the example shown in FIG. 3, there are 2 magnetron groups, with 6 magnetrons in the 1 st magnetron group and 6 magnetrons in the 2 nd magnetron group. It is understood that the number of magnetron groups is greater than or equal to 2. Such asThe number of magnetron groups may be, but is not limited to, 2, 3, 4, 5, 6, 7, 8, etc. Further, the number of magnetron groups may be, but is not limited to, 2, 4, 6, 8, etc. The number of magnetrons in each magnetron group can also be selected according to actual requirements.
Further, for convenience of distinguishing the magnetrons in each magnetron group, in a specific example, the magnetrons in the 1 st magnetron group are sequentially numbered W1, W2, W3 and … … Wn in the clockwise direction, and the magnetrons in the 2 nd magnetron group are sequentially numbered N1, N2, N3 and … … Nn in the clockwise direction. In the example shown in fig. 3, the polarities of the outer magnets of adjacent two magnetrons of W1, W2, W3, … … Wn are opposite. The polarities of the outer magnets of two adjacent magnetrons in N1, N2, N3 and … … Nn are the same. Specifically, the polarities of the outer magnets of adjacent two magnetrons of W1, W2, W3, W4, W5 and W6 are opposite, and the polarities of the outer magnets of adjacent two magnetrons of N1, N2, N3, N4, N5 and N6 are the same.
In a specific example, the magnetic field strength of the outer magnet of the magnetron in the 2p + 1-th magnetron group is larger than or equal to that of the inner magnet thereof; and/or the presence of a gas in the gas,
the magnetic field intensity of the outer magnet of the magnetron in the 2q magnetron group is larger than that of the inner magnet.
Further, the polarities of the outer magnets of two adjacent magnetrons in the 2p + 1-th magnetron group are opposite; and/or the polarities of the outer magnets of two adjacent magnetrons in the 2q magnetron group are the same. At this time, it can be understood that, in the magnetron groups ordered as an odd number in the outer-to-inner direction, the polarities of the outer magnets of the adjacent two magnetrons are opposite. In the magnetron groups ordered as an even number, the polarities of the outer magnets of the two adjacent magnetrons are the same.
As a specific example of the arrangement of the magnetron groups, the magnetrons in each magnetron group are distributed around the center of the coating mask. Furthermore, the magnetrons in each magnetron group are uniformly distributed along the center of the coating cover. Furthermore, the magnetrons in each magnetron group are distributed in a ring shape along the center of the coating cover. It can be understood that the distance between two adjacent magnetron groups is equal. At this time, the magnetron groups are distributed on the rings with equal distance.
In one particular example, the number of magnetrons in each magnetron group is equal. Furthermore, the magnetrons in each magnetron group are in one-to-one parallel correspondence. Furthermore, the magnetrons in two adjacent magnetron groups are arranged opposite to each other.
In another specific example, the number of magnetrons in each magnetron group decreases in the outer-to-inner direction.
Regarding the arrangement of the sample tubes in the magnetron sputtering coating chamber, a plurality of sample stages 800 are provided, and the sample stage 800 is arranged between each two adjacent magnetron groups. Further, there may be a plurality of sample stages 800 between two adjacent magnetron groups.
It is understood that the sample stage 800 is rotatably coupled to the plating housing 700 while the sample stage 800 is capable of revolving around the center of the plating housing 700. Further, when the number of magnetrons in each magnetron group is equal, one sample stage 800 is disposed between two mutually corresponding magnetrons 400.
In a specific example, the magnetron sputtering coating chamber 100 comprises a coating cover 700, a sample stage 800 and two magnetron groups; the sample stage and the two magnetron groups are both positioned in the coating cover, and the sample stage is arranged between the two adjacent magnetron groups. In the direction from outside to inside, the two magnetron groups are divided into a 1 st magnetron group and a 2 nd magnetron group. That is, m =2, the 1 st magnetron group is located at the outermost layer, and the 2 nd magnetron group is located at the next outermost layer.
Wherein the 1 st magnetron group has an even number of magnetrons, and a1Not less than 4. For example, the number of magnetrons in group 1 can be 4, 6, 8, 10, etc. The 2 nd magnetron group has an even number of magnetrons, and b1Not less than 2. For example, the number of magnetrons in the group 2 magnetron may be 2, 4, 6, 8, 10, etc. Further, the 2 nd magnetron group has an even number of magnetrons, and b1Not less than 4. For example, the number of magnetrons in the group 2 magnetron may be 4, 6, 8, 10, etc.
In this example, the magnetrons in the 1 st magnetron group are distributed around the center of the coating enclosure 700 and the magnetrons in the 2 nd magnetron group are distributed around the center of the coating enclosure 700. The magnetrons in the 1 st magnetron group and the 2 nd magnetron group respectively comprise an inner magnet 401 and two outer magnets 402 positioned at two sides of the inner magnet 401, and the polarity of the inner magnet 401 is opposite to that of the outer magnets 402; for example, the arrangement of the inner and outer magnets in the magnetron may be N-S-N or S-N-S.
The polarities of the outer magnets 402 of the adjacent two magnetrons in the 1 st magnetron group are opposite. Taking the number of the magnetrons in the 1 st magnetron group as 4 as an example, the arrangement of the 4 magnetrons in the 1 st magnetron group can be N-S-N, S-N-S, N-S-N, S-N-S in sequence, at this time, a closed magnetic field can be formed between the magnetrons at the outermost layer, and all electrons can be bound in an interval formed by the magnetron groups at the outermost layer in the film coating process, thereby effectively reducing the annihilation of the electrons. Taking the number of the magnetron in the 1 st magnetron group as 6 as an example, the arrangement of the 6 magnetrons in the 1 st magnetron group can be N-S-N, S-N-S, N-S-N, S-N-S, N-S-N, S-N-S in sequence.
In this example, the polarities of the outer magnets 402 of the adjacent two magnetrons in the 2 nd magnetron group are the same. Taking the number of the magnetrons in the 2 nd magnetron group as 4 as an example, the arrangement of the 4 magnetrons in the 2 nd magnetron group can be N-S-N, N-S-N, N-S-N, N-S-N in sequence. Taking the number of the magnetrons in the 2 nd magnetron group as 2 as an example, the arrangement of the 2 magnetrons in the 2 nd magnetron group can be N-S-N, N-S-N in sequence. Taking the number of the magnetrons in the 2 nd magnetron group as 6 as an example, the arrangement of the 6 magnetrons in the 2 nd magnetron group can be N-S-N, N-S-N, N-S-N, N-S-N, N-S-N, N-S-N in sequence.
In one particular example, the outer magnets of the magnetrons in the 2q magnetron group have a magnetic field strength equal to the magnetic field strength of the magnets therein. For example, the magnetic field strength of the two outer magnets and the magnetic field strength of the inner magnet of the magnetron in the 2q magnetron group are 4000 Gausses (GS), or the magnetic field strength of the two outer magnets and the magnetic field strength of the inner magnet of the magnetron in the 2q magnetron group are 2500 GS.
In one specific example, the magnetic field strength of the outer magnet of the magnetron in the 2q magnetron group is greater than the magnetic field strength of the inner magnet thereof. For example, the magnetic field strength of two outer magnets of the magnetrons in the 2q magnetron group is 4000GS, and the magnetic field strength of the inner magnet thereof is 2500 GS.
In one specific example, the magnetic field strength of the outer magnet of the magnetron in the 2q magnetron group is less than the magnetic field strength of the inner magnet thereof. For example, the magnetic field strength of two outer magnets of the magnetrons in the 2q magnetron group is 2500GS, and the magnetic field strength of the inner magnet thereof is 4000 GS.
In one specific example, the outer magnet of the magnetron in the 2p +1 th magnetron group has a magnetic field strength less than that of the inner magnet thereof. For example, the magnetic field strength of two outer magnets of the magnetron in the 2p +1 th magnetron group is 2500GS, and the magnetic field strength of the inner magnet thereof is 4000 GS.
In one particular example, the magnetic field strength of the outer magnet of the magnetron in the 2p +1 th magnetron group is equal to the magnetic field strength of the magnet therein. For example, the magnetic field strength of the two outer magnets and the magnetic field strength of the inner magnet of the magnetron in the 2p + 1-th magnetron group are both 4000 Gausses (GS), or the magnetic field strength of the two outer magnets and the magnetic field strength of the inner magnet of the magnetron in the 2p + 1-th magnetron group are both 2500 GS.
In one specific example, the magnetic field strength of the outer magnet of the magnetron in the 2p +1 th magnetron group is greater than the magnetic field strength of the inner magnet thereof. For example, the magnetic field strength of two outer magnets of the magnetron in the 2p +1 th magnetron group is 4000GS, and the magnetic field strength of the inner magnet thereof is 2500 GS.
In a specific example, the magnetic field intensity of the outer magnet of the magnetron in the 1 st magnetron group is smaller than that of the inner magnet thereof; or the magnetic field intensity of the outer magnet of the magnetron in the 1 st magnetron group is larger than that of the inner magnet; or the magnetic field intensity of the outer magnet of the magnetron in the 1 st magnetron group is equal to that of the inner magnet thereof. And/or the magnetic field intensity of the outer magnet of the magnetron in the 2 nd magnetron group is smaller than that of the inner magnet thereof; or the magnetic field intensity of the outer magnet of the magnetron in the 2 nd magnetron group is larger than that of the inner magnet; or the magnetic field intensity of the outer magnet of the magnetron in the 2 nd magnetron group is equal to that of the inner magnet thereof.
Further, the magnetic field strength of the two outer magnets of the magnetron in the 1 st magnetron group is 4000GS and the magnetic field strength of the inner magnet thereof is 2500GS, or the magnetic field strength of the two outer magnets of the magnetron in the 1 st magnetron group is 2500GS and the magnetic field strength of the inner magnet thereof is 4000GS, or the magnetic field strength of the two outer magnets of the magnetron in the 1 st magnetron group is 4000GS and the magnetic field strength of the inner magnet thereof is 4000GS, or the magnetic field strength of the two outer magnets of the magnetron in the 1 st magnetron group is 2500GS and the magnetic field strength of the inner magnet thereof is 2500 GS.
Further, the magnetic field strength of the two outer magnets of the magnetron in the 2 nd magnetron group is 4000GS and the magnetic field strength of the magnet therein is 2500GS, or the magnetic field strength of the two outer magnets of the magnetron in the 2 nd magnetron group is 2500GS and the magnetic field strength of the magnet therein is 4000GS, or the magnetic field strength of the two outer magnets of the magnetron in the 2 nd magnetron group is 4000GS and the magnetic field strength of the magnet therein is 4000GS, or the magnetic field strength of the two outer magnets of the magnetron in the 2 nd magnetron group is 2500GS and the magnetic field strength of the magnet therein is 2500 GS.
In a specific example, the magnetic field strength of the outer magnet of the magnetron in the 2p + 1-th magnetron group is larger than or equal to that of the inner magnet thereof; and/or the magnetic field intensity of the outer magnet of the magnetron in the 2q magnetron group is larger than that of the inner magnet.
Specifically, the magnetic field intensity of the outer magnet of the magnetron in the 1 st magnetron group is larger than or equal to that of the inner magnet thereof, and the magnetic field intensity of the outer magnet of the magnetron in the 2 nd magnetron group is larger than that of the inner magnet thereof. In a specific example, there are 3 magnetron groups, which are the 1 st magnetron group, the 2 nd magnetron group and the 3 rd magnetron group from outside to inside. Wherein the 1 st magnetron group has an even number of magnetrons, and a1And > 4, for example, 4, 6, 8, 10, etc. The 2 nd magnetron group has an even number of magnetrons, and b1For example, the number of the cells is 2, 4, 6, 8, 10, etc. The 3 rd magnetron group has an even number of magnetrons, and a2≧ 2, for example, can2, 4, 6, 8, 10, etc. Further, when there are 3 magnetron groups, b1≥4，a2≥4。
In a specific example, there are 4 magnetron groups, which are, from outside to inside, the 1 st magnetron group, the 2 nd magnetron group, the 3 rd magnetron group and the 4 th magnetron group. Wherein the 1 st magnetron group has an even number of magnetrons, and a1And > 4, for example, 4, 6, 8, 10, etc. The 2 nd magnetron group has an even number of magnetrons, and b1For example, the number of the cells is 2, 4, 6, 8, 10, etc. The 3 rd magnetron group has an even number of magnetrons, and a2And > 2, for example, 2, 4, 6, 8, 10, etc. The 4 th magnetron group has an even number of magnetrons, and b2For example, the number of the cells is 2, 4, 6, 8, 10, etc. Further, when there are 4 magnetron groups, b1≥4，a2≥4，b2≥4。
Another embodiment of the invention provides a coater. The coating machine comprises a plurality of targets and the magnetron sputtering coating cavity, wherein the targets correspond to the magnetrons one by one.
In one particular example, the target is located above the magnetron. Optionally, the distance between the target and the magnetron is less than or equal to 15 cm. Optionally, the distance between the target and the magnetron is 6 cm-12 cm. Further, the distance between the target and the sample table is 7 cm-15 cm. In the actual coating process, the distance between the base material on the sample table and the target is controlled to be 7-15 cm.
In yet another embodiment of the present invention, a method of coating a film is provided. The coating method adopts the coating machine, and comprises the following steps:
placing a base material to be coated on a sample table;
forming back vacuum in the coating cover;
introducing gas capable of generating glow discharge into the coating cover;
and applying coating power to the target and applying coating bias to the substrate to be coated.
In one specific example, the coating power is 4W/cm2~6W/cm2The coating bias is-200V to-50V.
In another specific example, the step of applying the coating power to the target and the coating bias to the substrate to be coated further comprises the following steps: and carrying out plasma cleaning on the base material to be coated.
Specifically, the negative pressure of the plasma cleaning is set to be-1000V to-500V, and the plasma cleaning time is 10min to 30 min. And during plasma cleaning, the pressure in the coating cover is 1.5-3 Pa.
The following are specific examples.
Example 1
In this embodiment, a coater including the magnetron sputtering coating chamber shown in fig. 3 is used. The base material to be coated is stainless steel 148mm × 210mm and 3mm in thickness. The magnetic field intensity of the outer magnet in the magnetron of W1, W2, W3, W4, W5 and W6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The magnetic field intensity of the outer magnet in the magnetron of N1, N2, N3, N4, N5 and N6 is 4000GS, and the magnetic field intensity of the inner magnet is 2500 GS. The Cr targets with the purity of 99% are mounted on W1, W2, W3, W4, W5, W6, N1, N2, N3, N4, N5 and N6.
The coating method in the embodiment comprises the following steps:
s101: pretreatment: placing the base material to be coated in acetone solution, ultrasonic cleaning for 15min, placing in alcohol solution, ultrasonic cleaning for 15min, blow-drying with nitrogen, spreading the base material to be coated on the sample stage of coating machine, vacuumizing the vacuum chamber to 5 × 10- 4Pa, heating to 200 ℃, and keeping the temperature for 15 min.
S102: plasma cleaning: introducing Ar gas, keeping the pressure in the film coating chamber at 2.0Pa, starting bias voltage, setting the bias voltage at-900V, carrying out plasma cleaning for 20min, and removing the micro impurities on the surface of the substrate to be coated by using plasma etching.
S103: depositing a buffer film: the revolving frame is started, the set rotating speed is 6 circles/minute, the revolving frame rotates and is driven by the revolution gear, and the transmission ratio is 3: 1. Introducing Ar gas into the Cr target by adopting a radio frequency auxiliary direct current power supply, keeping the pressure in the coating chamber to be 0.5Pa, starting bias voltage, setting the bias voltage to be-100V, and controlling the power of the Cr targets of W1, W2, W3, W4, W5 and W6The density was set to 4.2W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 4.8W/cm2And forming a buffer film with the target thickness of 300nm on the surface of the base material to be plated by controlling the film forming time.
S104: depositing a CrN layer: introduction of N2And keeping Ar: n is a radical of2The gas amount ratio of (A) was 5:1, the pressure in the plating chamber was kept at 0.5Pa, and the power density of Cr targets of W1, W2, W3, W4, W5 and W6 was set to 4.5W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 5.2W/cm2By controlling the film formation time, a CrN layer having a target thickness of 2.0 μm was obtained.
Example 2
In this embodiment, a coater including the magnetron sputtering coating chamber shown in fig. 3 is used. The base material to be coated is stainless steel 148mm × 210mm and 3mm in thickness. The magnetic field intensity of the outer magnet in the magnetron of W1, W2, W3, W4, W5 and W6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The magnetic field intensity of the outer magnet in the magnetron of N1, N2, N3, N4, N5 and N6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The Cr targets with the purity of 99% are mounted on W1, W2, W3, W4, W5, W6, N1, N2, N3, N4, N5 and N6.
The coating method in the embodiment comprises the following steps:
s101: pretreatment: placing the base material to be coated in acetone solution, ultrasonic cleaning for 15min, placing in alcohol solution, ultrasonic cleaning for 15min, blow-drying with nitrogen, spreading the base material to be coated on the sample stage of coating machine, vacuumizing the vacuum chamber to 5 × 10- 4Pa, heating to 200 ℃, and keeping the temperature for 15 min.
S102: plasma cleaning: introducing Ar gas, keeping the pressure in the film coating chamber at 2.0Pa, starting bias voltage, setting the bias voltage at-900V, carrying out plasma cleaning for 20min, and removing the micro impurities on the surface of the substrate to be coated by using plasma etching.
S103: depositing a buffer film: the revolving frame is started, the set rotating speed is 6 circles/minute, the revolving frame rotates and is driven by the revolution gear, and the transmission ratio is 3: 1. The Cr target is electrified by adopting a radio frequency auxiliary direct current power supply, Ar gas is introduced, the pressure in the film coating chamber is kept at 0.5Pa, and the Cr target is openedStarting bias voltage, setting bias voltage to-100V, and setting power density of Cr targets of W1, W2, W3, W4, W5 and W6 to 4.2W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 4.8W/cm2And forming a buffer film with the target thickness of 300nm on the surface of the base material to be plated by controlling the film forming time.
S104: depositing a CrN layer: introduction of N2And keeping Ar: n is a radical of2The gas amount ratio of (A) was 5:1, the pressure in the plating chamber was kept at 0.5Pa, and the power density of Cr targets of W1, W2, W3, W4, W5 and W6 was set to 4.5W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 5.2W/cm2By controlling the film formation time, a CrN layer having a target thickness of 2.0 μm was obtained.
Example 3
In this embodiment, a coater including the magnetron sputtering coating chamber shown in fig. 3 is used. The base material to be coated is stainless steel 148mm × 210mm and 3mm in thickness. The magnetic field intensity of the outer magnet in the magnetron of W1, W2, W3, W4, W5 and W6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The magnetic field strength of the outer magnet in the magnetron of N1, N2, N3, N4, N5 and N6 is 2500GS, and the magnetic field strength of the inner magnet is 2500 GS. The Cr targets with the purity of 99% are mounted on W1, W2, W3, W4, W5, W6, N1, N2, N3, N4, N5 and N6.
The coating method in the embodiment comprises the following steps:
s101: pretreatment: placing the base material to be coated in acetone solution, ultrasonic cleaning for 15min, placing in alcohol solution, ultrasonic cleaning for 15min, blow-drying with nitrogen, spreading the base material to be coated on the sample stage of coating machine, vacuumizing the vacuum chamber to 5 × 10- 4Pa, heating to 200 ℃, and keeping the temperature for 15 min.
S102: plasma cleaning: introducing Ar gas, keeping the pressure in the film coating chamber at 2.0Pa, starting bias voltage, setting the bias voltage at-900V, carrying out plasma cleaning for 20min, and removing the micro impurities on the surface of the substrate to be coated by using plasma etching.
S103: depositing a buffer film: the revolving frame is started, the set rotating speed is 6 circles/minute, the revolving frame rotates and is driven by the revolution gear, and the transmission ratio is 3: 1. The Cr target adopts radio frequencyIntroducing Ar gas, maintaining the pressure in the film coating chamber at 0.5Pa, opening the bias voltage, setting the bias voltage at-100V, and setting the power density of Cr targets of W1, W2, W3, W4, W5 and W6 at 4.2W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 4.8W/cm2And forming a buffer film with the target thickness of 300nm on the surface of the base material to be plated by controlling the film forming time.
S104: depositing a CrN layer: introduction of N2And keeping Ar: n is a radical of2The gas amount ratio of (A) was 5:1, the pressure in the plating chamber was kept at 0.5Pa, and the power density of Cr targets of W1, W2, W3, W4, W5 and W6 was set to 4.5W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 5.2W/cm2By controlling the film formation time, a CrN layer having a target thickness of 2.0 μm was obtained.
Comparative example 1
In this comparative example, a coater including the magnetron sputtering coating chamber shown in fig. 4 was used. The base material to be coated is stainless steel 148mm × 210mm and 3mm in thickness. The polarities of the outer magnets of the adjacent magnetrons in W1, W2, W3, W4, W5 and W6 are opposite, and the polarities of the outer magnets of the adjacent magnetrons in N1, N2, N3, N4, N5 and N6 are opposite. The magnetic field intensity of the outer magnet in the magnetron of W1, W2, W3, W4, W5 and W6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The magnetic field intensity of the outer magnet in the magnetron of N1, N2, N3, N4, N5 and N6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The Cr targets with the purity of 99% are mounted on W1, W2, W3, W4, W5, W6, N1, N2, N3, N4, N5 and N6.
The coating method in this comparative example includes the steps of:
s101: pretreatment: placing the base material to be coated in acetone solution, ultrasonic cleaning for 15min, placing in alcohol solution, ultrasonic cleaning for 15min, blow-drying with nitrogen, spreading the base material to be coated on the sample stage of coating machine, vacuumizing the vacuum chamber to 5 × 10- 4Pa, heating to 200 ℃, and keeping the temperature for 15 min.
S102: plasma cleaning: introducing Ar gas, keeping the pressure in the film coating chamber at 2.0Pa, starting bias voltage, setting the bias voltage at-900V, carrying out plasma cleaning for 20min, and removing the micro impurities on the surface of the substrate to be coated by using plasma etching.
S103: depositing a buffer film: the revolving frame is started, the set rotating speed is 6 circles/minute, the revolving frame rotates and is driven by the revolution gear, and the transmission ratio is 3: 1. Introducing Ar gas into the Cr target by adopting a radio frequency auxiliary direct current power supply, keeping the pressure in the coating chamber to be 0.5Pa, starting the bias voltage, setting the bias voltage to be-100V, and setting the power density of the Cr targets of W1, W2, W3, W4, W5 and W6 to be 4.2W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 4.8W/cm2And forming a buffer film with the target thickness of 300nm on the surface of the base material to be plated by controlling the film forming time.
S104: depositing a CrN layer: introduction of N2And keeping Ar: n is a radical of2The gas amount ratio of (A) was 5:1, the pressure in the plating chamber was kept at 0.5Pa, and the power density of Cr targets of W1, W2, W3, W4, W5 and W6 was set to 4.5W/cm2The power density of Cr targets of N1, N2, N3, N4, N5 and N6 was set to 5.2W/cm2By controlling the film formation time, a CrN layer having a target thickness of 2.0 μm was obtained.
Comparative example 2
In this comparative example, a coater including the magnetron sputtering coating chamber shown in fig. 5 was used. The base material to be coated is stainless steel 148mm × 210mm and 3mm in thickness. The polarities of the outer magnets of adjacent magnetrons in W1, W2, W3, W4, W5 and W6 are opposite. N1, N2, N3, N4, N5, N6 were not provided. The magnetic field intensity of the outer magnet in the magnetron of W1, W2, W3, W4, W5 and W6 is 4000GS, and the magnetic field intensity of the inner magnet is 4000 GS. The Cr targets with the purity of 99% are mounted on W1, W2, W3, W4, W5 and W6.
The coating method in this comparative example includes the steps of:
s101: pretreatment: placing the base material to be coated in acetone solution, ultrasonic cleaning for 15min, placing in alcohol solution, ultrasonic cleaning for 15min, blow-drying with nitrogen, spreading the base material to be coated on the sample stage of coating machine, vacuumizing the vacuum chamber to 5 × 10- 4Pa, heating to 200 ℃, and keeping the temperature for 15 min.
S102: plasma cleaning: introducing Ar gas, keeping the pressure in the film coating chamber at 2.0Pa, starting bias voltage, setting the bias voltage at-900V, carrying out plasma cleaning for 20min, and removing the micro impurities on the surface of the substrate to be coated by using plasma etching.
S103: depositing a buffer film: the revolving frame is started, the set rotating speed is 6 circles/minute, the revolving frame rotates and is driven by the revolution gear, and the transmission ratio is 3: 1. Introducing Ar gas into the Cr target by adopting a radio frequency auxiliary direct current power supply, keeping the pressure in the coating chamber to be 0.5Pa, starting the bias voltage, setting the bias voltage to be-100V, and setting the power density of the Cr targets of W1, W2, W3, W4, W5 and W6 to be 4.2W/cm2And forming a buffer film with the target thickness of 300nm on the surface of the base material to be plated by controlling the film forming time.
S104: depositing a CrN layer: introduction of N2And keeping Ar: n is a radical of2The gas amount ratio of (A) was 5:1, the pressure in the plating chamber was kept at 0.5Pa, and the power density of Cr targets of W1, W2, W3, W4, W5 and W6 was set to 4.5W/cm2By controlling the film formation time, a CrN layer having a target thickness of 2.0 μm was obtained.
Test example
The thickness and hardness of the surface coating layer of the stainless steel obtained in examples 1 to 3 and comparative examples 1 to 2 were measured, and the test results are shown in table 1.
The thickness test adopts a DEKTAK 150 model step tester produced by VEECO in America to test the thickness of each film, the diameter of a probe is 2.5 mu m, the pressure is 3mg, and 3 data tested by each test point are averaged. Wherein the test points are shown in fig. 6.
Hardness test the hardness of each film was tested using an NHT3 nanoindenter model manufactured by Anton-Paar, Austria, equipped with a tetrahedral Berkvich indenter, set the indentation depth to 100nm, with the load varying with indentation depth, and the average value was taken after testing 5 matrix points for each test point. Wherein the test points are shown in fig. 6.
The standard deviation calculation is calculated using the following formula, where x is the sample mean and n is the sample size:
Figure 422262DEST_PATH_IMAGE001
。
TABLE 1
Figure DEST_PATH_IMAGE002
As can be seen from Table 1, through analysis of hardness data of the examples and the comparative examples, hardness values of the examples 1-3 are between those of the comparative examples 1 and 2, are all more than or equal to 15GPa, and meet industrial standards, and the coating method in the embodiment of the invention can form a compact and high-hardness film.
Through the analysis of the standard deviation data of hardness and thickness of the examples and the comparative examples, the standard deviation performance is approximate on the data results of the groups of data of L1, La, Lb, Lc and Ld, and the standard deviation performance meets the industrial requirements. However, the data results of L1, L2, L3, L4 and L5 show great differences, specifically: the example data is better in uniformity than the comparative example data, specifically, in examples 1 to 3, the standard deviation of hardness is 0.48-1.48, the standard deviation of film thickness is 0.1-0.24, the industrial standard (the standard deviation of hardness is less than or equal to 2.5, and the standard deviation of film thickness is less than or equal to 0.25) is met, and the excellent uniformity is shown in example 1, wherein the uniformity is the most excellent, as a preferred embodiment of the invention, in comparative examples 1 to 2, the standard deviation of hardness is 3.17-3.57, and the standard deviation of film thickness is 0.5-0.64, and the poor uniformity is shown, especially, the difference between L3 and L1, L5 is larger, in the comparative examples, because of adopting the single/double closed magnetic field design, the electron confinement and the plasma confinement in the magnetron area can form a closed loop, which can cause the collision energy generated in the long-range sputtering particles to weaken in the long-range sputtering process, which can cause the small hardness of the film formed on the L3 point in the central area of the sample, The thickness is thin, and because the inner ring adopts the non-closed magnetic field in the embodiment, magnetic lines of force repel each other, so that electrons and plasma fly to the center of the workpiece, sputtering particles are driven to sputter for a long distance, the thin films at the center and the periphery of the sample are uniform, and the scheme in the embodiment can obtain more uniform coating thickness on the large-size workpiece.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the patent of the invention is subject to the appended claims, and the description can be used for explaining the contents of the claims.

Claims (10)

1. A magnetron sputtering coating chamber is characterized by comprising a coating cover, a sample stage and a plurality of magnetron groups; the sample stage and the magnetron groups are positioned in the coating cover, and the sample stage is arranged between two adjacent magnetron groups;
in the direction from outside to inside, the multiple magnetron groups are divided into a 1 st magnetron group and a 2 nd magnetron group … … mth magnetron group, and m is an integer more than or equal to 2;
wherein the 1 st magnetron group has a1Magnetron, … … the 2 nd p +1 th magnetron group has axA magnetron, p is an integer not less than 0, x is an integer not less than 1, a1、……axIs an even number, a1≥4；
The 2 nd magnetron group has b1Individual magnetrons, … … group of 2q magnetrons having byA magnetron, q is an integer not less than 1, y is an integer not less than 1, b1、……byIs an even number, b1≥2；
The magnetrons in the 1 st magnetron group are distributed around the center of the coating cover, and the magnetrons in the 2 nd magnetron group are distributed around the center of the coating cover; the magnetron comprises an inner magnet and two outer magnets positioned on two sides of the inner magnet, wherein the polarity of the inner magnet is opposite to that of the outer magnets; the polarities of the outer magnets of the two adjacent magnetrons in the 1 st magnetron group are opposite, and the polarities of the outer magnets of the two adjacent magnetrons in the 2 nd magnetron group are the same.
2. The magnetron sputter coating chamber of claim 1, wherein m is an even number greater than or equal to 2.
3. The magnetron sputter coating chamber of claim 1 wherein axNot less than 4; and/or, by≥4。
4. The magnetron sputter coating chamber of claim 1 wherein the outer magnets of the magnetrons in the 2p +1 magnetron group have a magnetic field strength greater than or equal to the magnetic field strength of the inner magnets thereof; and/or the presence of a gas in the gas,
the magnetic field intensity of the outer magnet of the magnetron in the 2q magnetron group is larger than that of the inner magnet.
5. The magnetron sputter coating chamber of claim 1 wherein the outer magnets of adjacent two magnetrons in the 2p +1 magnetron group are of opposite polarity; and/or the presence of a gas in the gas,
the polarities of the outer magnets of two adjacent magnetrons in the 2q magnetron group are the same.
6. The magnetron sputter coating chamber of any one of claims 1 to 5, wherein the magnetrons in each magnetron group are distributed around the center of said coating enclosure.
7. The magnetron sputter coating chamber of claim 6 wherein the number of magnetrons in each magnetron group is equal.
8. The magnetron sputter coating chamber of claim 6 wherein the number of magnetrons in each magnetron group decreases in the outer-to-inner direction.
9. A coating machine, characterized by comprising a plurality of targets and the magnetron sputtering coating chamber as claimed in any one of claims 1 to 8, wherein the targets correspond to the magnetrons one by one.
10. A coating method using the coating machine according to claim 9, characterized by comprising the steps of:
placing a substrate to be coated on the sample table;
forming a back vacuum in the coating mask;
introducing gas capable of generating glow discharge into the coating cover;
and applying coating power to the target and applying coating bias to the substrate to be coated.
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