CN113773920A - Silicon wafer single-component cleaning agent and preparation method thereof - Google Patents
Silicon wafer single-component cleaning agent and preparation method thereof Download PDFInfo
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- CN113773920A CN113773920A CN202111084976.8A CN202111084976A CN113773920A CN 113773920 A CN113773920 A CN 113773920A CN 202111084976 A CN202111084976 A CN 202111084976A CN 113773920 A CN113773920 A CN 113773920A
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- 239000012459 cleaning agent Substances 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000006184 cosolvent Substances 0.000 claims abstract description 19
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 239000003112 inhibitor Substances 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000002738 chelating agent Substances 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 16
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 16
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 14
- 239000006172 buffering agent Substances 0.000 claims abstract description 14
- 150000007529 inorganic bases Chemical class 0.000 claims abstract description 14
- 239000000375 suspending agent Substances 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 13
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000000047 product Substances 0.000 claims description 10
- 239000011265 semifinished product Substances 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000006011 modification reaction Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 4
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 4
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 4
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 4
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 4
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 4
- 235000015497 potassium bicarbonate Nutrition 0.000 claims description 4
- 229910000028 potassium bicarbonate Inorganic materials 0.000 claims description 4
- 239000011736 potassium bicarbonate Substances 0.000 claims description 4
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 claims description 4
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 4
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- MKJXYGKVIBWPFZ-UHFFFAOYSA-L calcium lactate Chemical compound [Ca+2].CC(O)C([O-])=O.CC(O)C([O-])=O MKJXYGKVIBWPFZ-UHFFFAOYSA-L 0.000 claims description 3
- 239000001527 calcium lactate Substances 0.000 claims description 3
- 229960002401 calcium lactate Drugs 0.000 claims description 3
- 235000011086 calcium lactate Nutrition 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 3
- 239000004299 sodium benzoate Substances 0.000 claims description 3
- 235000010234 sodium benzoate Nutrition 0.000 claims description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 239000000872 buffer Substances 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 7
- 239000006260 foam Substances 0.000 abstract description 7
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 239000011863 silicon-based powder Substances 0.000 abstract description 4
- 239000012634 fragment Substances 0.000 abstract description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical group [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
- C11D1/831—Mixtures of non-ionic with anionic compounds of sulfonates with ethers of polyoxyalkylenes without phosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/10—Carbonates ; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/373—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicones
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/143—Sulfonic acid esters
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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Abstract
The invention discloses a silicon wafer single-component cleaning agent and a preparation method thereof, wherein the silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water; the cleaning agent adopts a single-component formula, is convenient to add, has a good cleaning effect, has strong removal capacity on the pollution of the photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the process of cleaning the silicon wafer, reduces the silicon powder pollution, edge breakage and fragment on the surface of the silicon wafer caused by abnormal cleaning of a floating piece, and has lower cost and better cleaning effect on the surface of the silicon wafer compared with the existing cleaning agent.
Description
Technical Field
The invention relates to the technical field of silicon wafer cleaning agents, in particular to a silicon wafer single-component cleaning agent and a preparation method thereof.
Background
Silicon is a very common element, but the silicon rarely appears in the nature in the form of a simple substance, but widely exists in rocks, gravels and dust in the form of complex silicate or silicon dioxide, the content of the silicon element in the crust reaches 25.8%, and an inexhaustible source is provided for the production of monocrystalline silicon;
at present, a cleaning agent used in the market is generally an aqueous alkali of potassium hydroxide, the cleaning agent is easy to generate a large amount of foam and has poor cleaning effect, and a silicon wafer can float to cause the silicon wafer to leak out of a water surface by 2-20mm, so that silicon powder on the edge of the silicon wafer surface is polluted, edge breakage, fragment breakage and the like are abnormal.
Disclosure of Invention
Aiming at the problems, the invention aims to provide a silicon wafer single-component cleaning agent and a preparation method thereof, the cleaning agent adopts a single-component formula, is convenient to use and add, has a good cleaning effect, has strong removal capability on the contamination of a photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the process of cleaning the silicon wafer, and reduces the silicon powder contamination, edge breakage and fragment on the surface of the silicon wafer caused by the abnormal cleaning of a floating piece.
In order to achieve the purpose of the invention, the invention is realized by the following technical scheme: the silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water.
The further improvement lies in that: the feed comprises the following raw materials in parts by weight: 5 parts of inorganic base, 5 parts of chelating agent, 3 parts of buffering agent, 2 parts of dispersing agent, 15 parts of composite nonionic surfactant, 4 parts of suspending agent, 3 parts of cosolvent, 3 parts of sulfonic acid, 2 parts of defoaming agent, 2 parts of corrosion inhibitor, 8 parts of deionized water and 25 parts of pure water.
The further improvement lies in that: the composite nonionic surfactant is prepared by mixing two or three of nonylphenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.
The further improvement lies in that: the inorganic alkali is selected from one or two of sodium hydroxide and potassium hydroxide, and the chelating agent is selected from one or two or three of disodium ethylene diamine tetraacetate, tetrasodium ethylene diamine tetraacetate and sodium citrate.
The further improvement lies in that: the buffer is selected from one or two of sodium bicarbonate and potassium bicarbonate, and the dispersant is selected from one or two of sodium dodecyl benzene sulfonate and sodium dodecyl sulfate.
The further improvement lies in that: the cosolvent is selected from one of sodium benzoate, citric acid and calcium lactate, the defoaming agent is selected from one of non-silicon defoaming agent, polyether defoaming agent and organic silicon defoaming agent, and the corrosion inhibitor is selected from one of organic corrosion inhibitor and polymer corrosion inhibitor.
A preparation method of a silicon wafer single-component cleaning agent comprises the following steps:
the method comprises the following steps: premixing raw materials
Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;
step two: modification reaction
According to the first step, adding a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water into the semi-finished product of the cleaning agent in sequence, continuously mixing and stirring, uniformly stirring, and standing for 30-60 minutes to prepare a modified cleaning agent;
step three: filling finished products
And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.
The invention has the beneficial effects that: the cleaning agent adopts a single-component formula, is convenient to add, has a good cleaning effect, has strong removal capacity on the pollution of the photovoltaic silicon wafer, has small foam, can meet the cleaning requirement of the silicon wafer, has a cloud point of more than 60 ℃, can be used at a high temperature, reduces the cost in the cleaning process of the silicon wafer and reduces silicon powder pollution, edge breakage and breakage on the surface of the silicon wafer caused by abnormal cleaning of a floating wafer, has lower cost and better cleaning effect on the surface of the silicon wafer compared with the existing cleaning agent, and is worthy of wide popularization.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart of the preparation process of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example one
The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: the composite nonionic surfactant is prepared by mixing nonyl phenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, wherein the inorganic base is sodium hydroxide, the chelating agent is disodium ethylenediamine tetraacetate, the buffering agent is sodium bicarbonate, the dispersing agent is sodium dodecyl benzene sulfonate, the cosolvent is sodium benzoate, the defoaming agent is non-silicon defoaming agent, and the corrosion inhibitor is organic corrosion inhibitor.
Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:
the method comprises the following steps: premixing raw materials
Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;
step two: modification reaction
According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;
step three: filling finished products
And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.
Example two
The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: the composite nonionic surfactant is prepared by mixing alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, the inorganic base is potassium hydroxide, the chelating agent is tetrasodium ethylenediamine tetraacetate, the buffering agent is potassium bicarbonate, the dispersing agent is sodium dodecyl sulfate, the cosolvent is citric acid, the defoaming agent is a polyether defoaming agent, and the corrosion inhibitor is an organic corrosion inhibitor.
Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:
the method comprises the following steps: premixing raw materials
Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;
step two: modification reaction
According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;
step three: filling finished products
And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.
EXAMPLE III
The embodiment provides a silicon wafer single-component cleaning agent which comprises the following raw materials in parts by weight: 10 parts of inorganic base, 10 parts of chelating agent, 5 parts of buffering agent, 5 parts of dispersing agent, 20 parts of composite nonionic surfactant, 6 parts of suspending agent and 5 parts of cosolvent, 5 parts of sulfonic acid, 3 parts of defoaming agent, 3 parts of corrosion inhibitor, 10 parts of deionized water and 30 parts of pure water, wherein the composite nonionic surfactant is prepared by mixing nonyl phenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether, the inorganic base is prepared by mixing sodium hydroxide and potassium hydroxide, the chelating agent is prepared by mixing disodium ethylenediamine tetraacetate, tetrasodium ethylenediamine tetraacetate and sodium citrate, the buffering agent is prepared by mixing sodium bicarbonate and potassium bicarbonate, the dispersing agent is prepared by mixing sodium dodecyl benzene sulfonate and sodium dodecyl sulfate, the cosolvent is calcium lactate, the defoaming agent is an organic silicon type defoaming agent, and the corrosion inhibitor is a polymer corrosion inhibitor.
Referring to fig. 1, this embodiment further provides a preparation method of the silicon wafer single-component cleaning agent, including the following steps:
the method comprises the following steps: premixing raw materials
Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;
step two: modification reaction
According to the first step, firstly, a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water are sequentially added into a semi-finished product of the cleaning agent to be continuously mixed and stirred, the mixture is uniformly stirred and then is kept stand for 30-60 minutes to prepare a modified cleaning agent, fine particles on the surface of a silicon wafer are stably suspended in water by adding the suspending agent to avoid secondary pollution caused by re-adsorption, the raw materials are better mutually dissolved by adding the cosolvent to improve the preparation efficiency, the oxide on the surface of the silicon wafer is reduced by adding the sulfonic acid, and the foam yield of the cleaning agent is reduced by adding the defoaming agent;
step three: filling finished products
And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.
The weight parts of the raw materials used in examples 1-3 are shown in table 1:
TABLE 1
The silicon wafer single-component cleaning agent prepared in the embodiment 1, the embodiment 2 and the embodiment 3 and the existing cleaning agent are subjected to cleaning effect test, and the test results are shown in the following table 2:
TABLE 2
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. The silicon wafer single-component cleaning agent comprises the following raw materials in parts by weight: 2-10 parts of inorganic base, 1-10 parts of chelating agent, 1-5 parts of buffering agent, 1-5 parts of dispersing agent, 10-20 parts of composite nonionic surfactant, 2-6 parts of suspending agent, 2-5 parts of cosolvent, 2-5 parts of sulfonic acid, 1-3 parts of defoaming agent, 1-3 parts of corrosion inhibitor, 5-10 parts of deionized water and 20-30 parts of pure water.
2. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the feed comprises the following raw materials in parts by weight: 5 parts of inorganic base, 5 parts of chelating agent, 3 parts of buffering agent, 2 parts of dispersing agent, 15 parts of composite nonionic surfactant, 4 parts of suspending agent, 3 parts of cosolvent, 3 parts of sulfonic acid, 2 parts of defoaming agent, 2 parts of corrosion inhibitor, 8 parts of deionized water and 25 parts of pure water.
3. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the composite nonionic surfactant is prepared by mixing two or three of nonylphenol polyoxyethylene ether, alkylphenol polyoxyethylene ether and alkylphenol polyoxyethylene ether.
4. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the inorganic alkali is selected from one or two of sodium hydroxide and potassium hydroxide, and the chelating agent is selected from one or two or three of disodium ethylene diamine tetraacetate, tetrasodium ethylene diamine tetraacetate and sodium citrate.
5. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the buffer is selected from one or two of sodium bicarbonate and potassium bicarbonate, and the dispersant is selected from one or two of sodium dodecyl benzene sulfonate and sodium dodecyl sulfate.
6. The silicon wafer single-component cleaning agent as claimed in claim 1, wherein the cleaning agent comprises: the cosolvent is selected from one of sodium benzoate, citric acid and calcium lactate, the defoaming agent is selected from one of non-silicon defoaming agent, polyether defoaming agent and organic silicon defoaming agent, and the corrosion inhibitor is selected from one of organic corrosion inhibitor and polymer corrosion inhibitor.
7. A preparation method of a silicon wafer single-component cleaning agent is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: premixing raw materials
Firstly, adding inorganic base, chelating agent, buffering agent, dispersing agent, composite nonionic surfactant and pure water in specified weight parts into a mixing container, mixing and stirring to prepare a semi-finished product of the cleaning agent;
step two: modification reaction
According to the first step, adding a suspending agent, a cosolvent, sulfonic acid, a defoaming agent, a slow-release agent and deionized water into the semi-finished product of the cleaning agent in sequence, continuously mixing and stirring, uniformly stirring, and standing for 30-60 minutes to prepare a modified cleaning agent;
step three: filling finished products
And according to the second step, the prepared modified cleaning agent is sealed and filled into a packaging container prepared in advance to prepare a cleaning agent finished product, and then the surface of the packaging container is sprayed with a label code and conveyed to a cool and ventilated warehouse for temporary storage.
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