CN113755946A - 一种半导体三极管表面lpcvd钝化膜及其制备方法 - Google Patents
一种半导体三极管表面lpcvd钝化膜及其制备方法 Download PDFInfo
- Publication number
- CN113755946A CN113755946A CN202110936925.7A CN202110936925A CN113755946A CN 113755946 A CN113755946 A CN 113755946A CN 202110936925 A CN202110936925 A CN 202110936925A CN 113755946 A CN113755946 A CN 113755946A
- Authority
- CN
- China
- Prior art keywords
- triode
- silane
- lpcvd
- mixture
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000077 silane Inorganic materials 0.000 claims abstract description 22
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 13
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000000206 photolithography Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
一种半导体三极管表面LPCVD钝化膜及其制备方法，属于芯片钝化膜制备技术领域。本发明的目的是为了解决现有半导体三极管性能不稳定的问题，所述钝化膜由硅氧多结构混合物和氮化硅两层组成，其中硅氧多结构混合物贴近三极管，氮化硅在外侧贴近外界。在现有三极管光刻之后，将三极管放入LPCVD设备中，同时通入笑气、硅烷和惰性气体的混合物，控制笑气与硅烷的体积比为20:80，沉积掺氧多晶硅，然后再改为通入氨气、硅烷和惰性气体的混合物，控制氮气和硅烷的体积比为50:18，沉积氮化硅。本发明加入LPCVD工艺作为表面保护结构，强化其可靠性，稳定性。由原产品参数在‑50℃～150℃和室温的参数变化率25～30％，降至20％以下。
Description
技术领域
本发明属于芯片钝化膜制备技术领域，具体涉及一种半导体三极管表面LPCVD钝化 膜及其制备方法。
背景技术
目前现有的半导体三极管的具体工艺流程为：氧化→光刻→硼扩散→光刻→磷扩散→ 光刻→玻璃钝化→光刻→蒸铝→光刻→铝合金→光刻→背面减薄→背面多层金属化→划片 →管芯测试→烧结→压线→封帽→中测→印字→筛选包装入库。由于用户需求的高可靠性， 半导体三极管在较极端的高温环境和低温环境等，出现不稳定的情况，已经不能满足目前 的用户需求，急需开发新的工艺或对已有工艺进行改进，使三极管性能更加稳定。
发明内容
本发明的目的是为了解决现有半导体三极管性能不稳定的问题，提供一种半导体三极 管表面LPCVD钝化膜及其制备方法。
LPCVD全称是高温低压气相沉积钝化膜技术，也指这种由硅氧多结构混合物和氮化硅 复合的钝化膜。原三极管分立器件生产中工艺中并没有该工艺，作为优化在三极管的芯片 之上加入LPCVD工艺。
为实现上述目的，本发明采取的技术方案如下：
一种半导体三极管表面LPCVD钝化膜，所述钝化膜由硅氧多结构混合物和氮化硅两 层组成，其中硅氧多结构混合物贴近三极管，氮化硅在外侧贴近外界。
一种上述的半导体三极管表面LPCVD钝化膜的制备方法，在现有三极管光刻之后，将三极管放入LPCVD设备中，同时通入笑气、硅烷和惰性气体的混合物，控制笑气与硅 烷的体积比为20:80，在低气压100PS、600℃的温度下反应80分钟沉积得到掺氧多晶硅， 然后再改为通入氨气、硅烷和惰性气体的混合物，控制氮气和硅烷的体积比为50:18，在 低气压100PS、800℃的温度下反应120分钟沉积氮化硅。
本发明相对于现有技术的有益效果为：
(1)LPCVD表面复合钝化技术为一种半导体中表面保护工艺，而这时该项工艺我厂首次用于大功率三极管分立器件生产中。
(2)LPCVD表面复合钝化工艺优化，在原有三极管生产流程中使用LPCVD设备， 加入LPCVD工艺作为表面保护结构，强化其可靠性，稳定性。由原产品参数在-50℃～150℃ 和室温的参数变化率25～30％(高温及低温测定参数与常温测定参数差值与室温比例)，降至20％以下。
(3)该工艺为在原结构上添加一层非金属复合钝化膜，可以提升可靠性方面的性能 参数，大部分为非直接测定需要通过试验得出。为我厂成熟工艺，但之前仅用于二极管产 品，在三极管中加入需要对工艺进行适应性调整。
(4)为我厂自创的成熟工艺，LPCVD设备为我厂常用设备，但是之前并不用于三 级管系列产品中之前仅用于二极管产品，在三极管中加入为首次。
具体实施方式
下面结合实例对本发明的技术方案作进一步的说明，但并不局限于此，凡是对本发明 技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围，均应涵盖在本 发明的保护范围中。
本发明流程：氧化→光刻→硼扩散→光刻→磷扩散→光刻→LPCVD→玻璃钝化→光 刻→蒸铝→光刻→铝合金→光刻→背面减薄→背面多层金属化→划片→管芯测试→烧结 →压线→封帽→中测→印字→筛选包装入库。
具体实施方式一：本实施方式记载的是一种半导体三极管表面LPCVD钝化膜，所述钝化膜由硅氧多结构混合物和氮化硅两层组成，其中硅氧多结构混合物为氧占比例 23-27％左右，氮化硅为Si3N4的沉积层，硅氧多结构混合物贴近三极管，氮化硅在外侧贴 近外界。所述氧占比例优选为为24-26％，进一步优选为25％。
具体实施方式二：一种具体实施方式一所述的半导体三极管表面LPCVD钝化膜的制 备方法，在现有三极管光刻之后，将三极管放入LPCVD设备中，同时通入笑气、硅烷和 惰性气体的混合物，控制笑气与硅烷的体积比为20:80，在低气压100PS(气压单位)、600℃ 的温度下反应80分钟沉积得到掺氧多晶硅，然后再改为通入氨气、硅烷和惰性气体的混 合物，控制氮气和硅烷的体积比为50:18，在低气压100PS(气压单位)、800℃的温度下 反应120分钟沉积氮化硅。
具体实施方式三：具体实施方式二所述的一种半导体三极管表面LPCVD钝化膜的制 备方法，所述硅烷为甲硅烷。
实施例1：
一种半导体三极管表面LPCVD钝化膜的制备方法，在现有三极管光刻之后，将三极管放入LPCVD设备中，同时通入笑气、甲硅烷和惰性气体的混合物，控制笑气与甲硅烷 的体积比为20:80，在低气压100PS(气压单位)、600℃的温度下反应80分钟沉积得到掺 氧多晶硅，然后再改为通入氨气、甲硅烷和惰性气体的混合物，控制氮气和甲硅烷的体积 比为50:18，在低气压100PS(气压单位)、800℃的温度下反应120分钟沉积氮化硅。
测试条件：将成品三极管接好导线放入125℃的恒温烘箱，将导线引出烘箱，在烘箱 外使用测试设备我们较QT2型半导体图示仪(测试设备)进行测定。低温也是同理将产品放入低温冰箱用导线引出测量。
经过试验，在三极管室温时的共发射极正向电流传输比静态值与在125℃～-55℃时 的共发射极正向电流传输比静态值的差值与未加入LPCVD设备及工艺时共发射极正向电流传输比静态值的差值的降低5％极端。产品在极端工作温度下的其它参数也有明显的改善。在不改变其它生产过程和工艺的情况下，可有效的提高产品的稳定性，有效控制成本的增减，在有限的成本增加获得较高的性能提升。
Claims (3)
1.一种半导体三极管表面LPCVD钝化膜，其特征在于：所述钝化膜由硅氧多结构混合物和氮化硅两层组成，其中硅氧多结构混合物贴近三极管，氮化硅在外侧贴近外界。
2.一种权利要求1所述的半导体三极管表面LPCVD钝化膜的制备方法，其特征在于：在现有三极管光刻之后，将三极管放入LPCVD设备中，同时通入笑气、硅烷和惰性气体的混合物，控制笑气与硅烷的体积比为20:80，在低气压100PS、600℃的温度下反应80分钟沉积得到掺氧多晶硅，然后再改为通入氨气、硅烷和惰性气体的混合物，控制氮气和硅烷的体积比为50:18，在低气压100PS、800℃的温度下反应120分钟沉积氮化硅。
3.根据权利要求2所述的一种半导体三极管表面LPCVD钝化膜的制备方法，其特征在于：所述硅烷为甲硅烷。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110936925.7A CN113755946A (zh) | 2021-08-16 | 2021-08-16 | 一种半导体三极管表面lpcvd钝化膜及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110936925.7A CN113755946A (zh) | 2021-08-16 | 2021-08-16 | 一种半导体三极管表面lpcvd钝化膜及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113755946A true CN113755946A (zh) | 2021-12-07 |
Family
ID=78789457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110936925.7A Pending CN113755946A (zh) | 2021-08-16 | 2021-08-16 | 一种半导体三极管表面lpcvd钝化膜及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113755946A (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931284A (zh) * | 2012-11-14 | 2013-02-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种晶体硅太阳能电池SiOx-SiNx叠层膜的制备方法 |
| CN110335901A (zh) * | 2019-08-12 | 2019-10-15 | 无锡松煜科技有限公司 | 光伏电池表面钝化***及钝化方法 |
| CN110335811A (zh) * | 2019-07-09 | 2019-10-15 | 山东宝乘电子有限公司 | 一种含氧多晶硅钝化膜的沉积方法及具有该钝化膜的芯片 |
-
2021
- 2021-08-16 CN CN202110936925.7A patent/CN113755946A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931284A (zh) * | 2012-11-14 | 2013-02-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种晶体硅太阳能电池SiOx-SiNx叠层膜的制备方法 |
| CN110335811A (zh) * | 2019-07-09 | 2019-10-15 | 山东宝乘电子有限公司 | 一种含氧多晶硅钝化膜的沉积方法及具有该钝化膜的芯片 |
| CN110335901A (zh) * | 2019-08-12 | 2019-10-15 | 无锡松煜科技有限公司 | 光伏电池表面钝化***及钝化方法 |
Non-Patent Citations (1)
| Title |
|---|
| 冯国进等: "采用LPCVD生长的SIPOS薄膜的钝化性质研究和应用", 《半导体情报》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kern et al. | Advances in deposition processes for passivation films | |
| JPS61275136A (ja) | ホウ素とリンをド−プした酸化シリコン層の形成方法 | |
| CN104498908B (zh) | 一种用于制备组件晶硅太阳能电池pecvd镀膜工艺 | |
| CN105977342A (zh) | 一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺 | |
| CN113755946A (zh) | 一种半导体三极管表面lpcvd钝化膜及其制备方法 | |
| US20150235917A1 (en) | Passivation Layer and Method of Making a Passivation Layer | |
| CN104037264B (zh) | 一种pecvd沉积低表面复合太阳电池介电层的方法 | |
| KR20050062132A (ko) | 혼합유전막을 구비한 캐패시터 형성방법 | |
| KR20040085675A (ko) | 유기발광소자 | |
| CN112760615B (zh) | 一种二氧化硅薄膜及其低温制备方法 | |
| JPS60224231A (ja) | 半導体装置 | |
| WO2020220664A1 (zh) | 一种可并联组合的整流二极管芯片的制造工艺 | |
| CN103205727A (zh) | 非晶硅光学薄膜折射率调节方法 | |
| JP2668043B2 (ja) | 保護絶縁膜を有する半導体装置，その製造方法およびその製造装置 | |
| CN216698382U (zh) | 一种光敏芯片钝化结构 | |
| JPS61256735A (ja) | 半導体装置及びその製造方法 | |
| KR100268804B1 (ko) | 반도체소자의 금속배선 형성방법 | |
| Hall et al. | The use of silane silicon dioxide films to contour oxide edges | |
| CN209029385U (zh) | 一种功率器件 | |
| JPH04505035A (ja) | 新規なガラスの蒸着時の粘弾性流動法 | |
| JP2700351B2 (ja) | 半導体装置およびその製造方法 | |
| JP3445902B2 (ja) | 半導体装置の製造方法 | |
| JPH0499026A (ja) | 半導体装置 | |
| JPH02218131A (ja) | 半導体装置およびその製造方法 | |
| CN115483316A (zh) | Perc电池的热氧工艺及perc电池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211207 |