CN113755946A - 一种半导体三极管表面lpcvd钝化膜及其制备方法 - Google Patents
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000077 silane Inorganic materials 0.000 claims abstract description 22
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 13
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
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- 238000000034 method Methods 0.000 claims description 13
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种半导体三极管表面LPCVD钝化膜及其制备方法,属于芯片钝化膜制备技术领域。本发明的目的是为了解决现有半导体三极管性能不稳定的问题,所述钝化膜由硅氧多结构混合物和氮化硅两层组成,其中硅氧多结构混合物贴近三极管,氮化硅在外侧贴近外界。在现有三极管光刻之后,将三极管放入LPCVD设备中,同时通入笑气、硅烷和惰性气体的混合物,控制笑气与硅烷的体积比为20:80,沉积掺氧多晶硅,然后再改为通入氨气、硅烷和惰性气体的混合物,控制氮气和硅烷的体积比为50:18,沉积氮化硅。本发明加入LPCVD工艺作为表面保护结构,强化其可靠性,稳定性。由原产品参数在‑50℃~150℃和室温的参数变化率25~30%,降至20%以下。
Description
技术领域
本发明属于芯片钝化膜制备技术领域,具体涉及一种半导体三极管表面LPCVD钝化 膜及其制备方法。
背景技术
目前现有的半导体三极管的具体工艺流程为:氧化→光刻→硼扩散→光刻→磷扩散→ 光刻→玻璃钝化→光刻→蒸铝→光刻→铝合金→光刻→背面减薄→背面多层金属化→划片 →管芯测试→烧结→压线→封帽→中测→印字→筛选包装入库。由于用户需求的高可靠性, 半导体三极管在较极端的高温环境和低温环境等,出现不稳定的情况,已经不能满足目前 的用户需求,急需开发新的工艺或对已有工艺进行改进,使三极管性能更加稳定。
发明内容
本发明的目的是为了解决现有半导体三极管性能不稳定的问题,提供一种半导体三极 管表面LPCVD钝化膜及其制备方法。
LPCVD全称是高温低压气相沉积钝化膜技术,也指这种由硅氧多结构混合物和氮化硅 复合的钝化膜。原三极管分立器件生产中工艺中并没有该工艺,作为优化在三极管的芯片 之上加入LPCVD工艺。
为实现上述目的,本发明采取的技术方案如下:
一种半导体三极管表面LPCVD钝化膜,所述钝化膜由硅氧多结构混合物和氮化硅两 层组成,其中硅氧多结构混合物贴近三极管,氮化硅在外侧贴近外界。
一种上述的半导体三极管表面LPCVD钝化膜的制备方法,在现有三极管光刻之后,将三极管放入LPCVD设备中,同时通入笑气、硅烷和惰性气体的混合物,控制笑气与硅 烷的体积比为20:80,在低气压100PS、600℃的温度下反应80分钟沉积得到掺氧多晶硅, 然后再改为通入氨气、硅烷和惰性气体的混合物,控制氮气和硅烷的体积比为50:18,在 低气压100PS、800℃的温度下反应120分钟沉积氮化硅。
本发明相对于现有技术的有益效果为:
(1)LPCVD表面复合钝化技术为一种半导体中表面保护工艺,而这时该项工艺我厂首次用于大功率三极管分立器件生产中。
(2)LPCVD表面复合钝化工艺优化,在原有三极管生产流程中使用LPCVD设备, 加入LPCVD工艺作为表面保护结构,强化其可靠性,稳定性。由原产品参数在-50℃~150℃ 和室温的参数变化率25~30%(高温及低温测定参数与常温测定参数差值与室温比例),降至20%以下。
(3)该工艺为在原结构上添加一层非金属复合钝化膜,可以提升可靠性方面的性能 参数,大部分为非直接测定需要通过试验得出。为我厂成熟工艺,但之前仅用于二极管产 品,在三极管中加入需要对工艺进行适应性调整。
(4)为我厂自创的成熟工艺,LPCVD设备为我厂常用设备,但是之前并不用于三 级管系列产品中之前仅用于二极管产品,在三极管中加入为首次。
具体实施方式
下面结合实例对本发明的技术方案作进一步的说明,但并不局限于此,凡是对本发明 技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,均应涵盖在本 发明的保护范围中。
本发明流程:氧化→光刻→硼扩散→光刻→磷扩散→光刻→LPCVD→玻璃钝化→光 刻→蒸铝→光刻→铝合金→光刻→背面减薄→背面多层金属化→划片→管芯测试→烧结 →压线→封帽→中测→印字→筛选包装入库。
具体实施方式一:本实施方式记载的是一种半导体三极管表面LPCVD钝化膜,所述钝化膜由硅氧多结构混合物和氮化硅两层组成,其中硅氧多结构混合物为氧占比例 23-27%左右,氮化硅为Si3N4的沉积层,硅氧多结构混合物贴近三极管,氮化硅在外侧贴 近外界。所述氧占比例优选为为24-26%,进一步优选为25%。
具体实施方式二:一种具体实施方式一所述的半导体三极管表面LPCVD钝化膜的制 备方法,在现有三极管光刻之后,将三极管放入LPCVD设备中,同时通入笑气、硅烷和 惰性气体的混合物,控制笑气与硅烷的体积比为20:80,在低气压100PS(气压单位)、600℃ 的温度下反应80分钟沉积得到掺氧多晶硅,然后再改为通入氨气、硅烷和惰性气体的混 合物,控制氮气和硅烷的体积比为50:18,在低气压100PS(气压单位)、800℃的温度下 反应120分钟沉积氮化硅。
具体实施方式三:具体实施方式二所述的一种半导体三极管表面LPCVD钝化膜的制 备方法,所述硅烷为甲硅烷。
实施例1:
一种半导体三极管表面LPCVD钝化膜的制备方法,在现有三极管光刻之后,将三极管放入LPCVD设备中,同时通入笑气、甲硅烷和惰性气体的混合物,控制笑气与甲硅烷 的体积比为20:80,在低气压100PS(气压单位)、600℃的温度下反应80分钟沉积得到掺 氧多晶硅,然后再改为通入氨气、甲硅烷和惰性气体的混合物,控制氮气和甲硅烷的体积 比为50:18,在低气压100PS(气压单位)、800℃的温度下反应120分钟沉积氮化硅。
测试条件:将成品三极管接好导线放入125℃的恒温烘箱,将导线引出烘箱,在烘箱 外使用测试设备我们较QT2型半导体图示仪(测试设备)进行测定。低温也是同理将产品放入低温冰箱用导线引出测量。
经过试验,在三极管室温时的共发射极正向电流传输比静态值与在125℃~-55℃时 的共发射极正向电流传输比静态值的差值与未加入LPCVD设备及工艺时共发射极正向电流传输比静态值的差值的降低5%极端。产品在极端工作温度下的其它参数也有明显的改善。在不改变其它生产过程和工艺的情况下,可有效的提高产品的稳定性,有效控制成本的增减,在有限的成本增加获得较高的性能提升。
Claims (3)
1.一种半导体三极管表面LPCVD钝化膜,其特征在于:所述钝化膜由硅氧多结构混合物和氮化硅两层组成,其中硅氧多结构混合物贴近三极管,氮化硅在外侧贴近外界。
2.一种权利要求1所述的半导体三极管表面LPCVD钝化膜的制备方法,其特征在于:在现有三极管光刻之后,将三极管放入LPCVD设备中,同时通入笑气、硅烷和惰性气体的混合物,控制笑气与硅烷的体积比为20:80,在低气压100PS、600℃的温度下反应80分钟沉积得到掺氧多晶硅,然后再改为通入氨气、硅烷和惰性气体的混合物,控制氮气和硅烷的体积比为50:18,在低气压100PS、800℃的温度下反应120分钟沉积氮化硅。
3.根据权利要求2所述的一种半导体三极管表面LPCVD钝化膜的制备方法,其特征在于:所述硅烷为甲硅烷。
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