CN113732936B - Polishing temperature control device, chemical mechanical polishing system and method - Google Patents
Polishing temperature control device, chemical mechanical polishing system and method Download PDFInfo
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- CN113732936B CN113732936B CN202111247657.4A CN202111247657A CN113732936B CN 113732936 B CN113732936 B CN 113732936B CN 202111247657 A CN202111247657 A CN 202111247657A CN 113732936 B CN113732936 B CN 113732936B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a polishing temperature control device, a chemical mechanical polishing system and a method, wherein the polishing temperature control device comprises a first temperature adjusting mechanism, a second temperature adjusting mechanism and a polishing solution control mechanism, wherein the first temperature adjusting mechanism comprises a heat transfer roller, an installation seat and a driving seat, the driving seat is arranged on a machine table plate of polishing equipment, the installation seat is arranged on the driving seat, the heat transfer roller is arranged on one side of the driving seat in a cantilever manner, the outer peripheral side of the heat transfer roller is abutted against the upper side of a polishing pad, and the rotating polishing pad drives the heat transfer roller to rotate around the axis of the rotating polishing pad so as to control the temperature of the polishing pad and the temperature of polishing solution; the second temperature adjusting mechanism is arranged in the wafer transmission path and used for ejecting fluid to the wafer passing through the second temperature adjusting mechanism so as to control the temperature of the bottom surface of the wafer.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a polishing temperature control device, a chemical mechanical polishing system and a chemical mechanical polishing method.
Background
The integrated circuit industry is the core of the information technology industry and plays a key role in the process of upgrading the boosting manufacturing industry to digitalization and intellectualization transformation. The chip is a carrier of an integrated circuit, and the chip manufacturing relates to the process flows of chip design, wafer manufacturing, wafer processing, electrical property measurement, cutting packaging, testing and the like. Wherein, the chemical mechanical polishing belongs to the wafer manufacturing process.
Chemical Mechanical Polishing (CMP) is an ultra-precise surface processing technique for global Planarization. Chemical mechanical polishing generally attracts a wafer to a bottom surface of a carrier head, the surface of the wafer having a deposition layer is pressed against an upper surface of a polishing pad, and the carrier head rotates in the same direction as the polishing pad under the actuation of a driving assembly and gives a downward load to the wafer; meanwhile, the polishing solution is supplied to the upper surface of the polishing pad and distributed between the wafer and the polishing pad, so that the chemical mechanical polishing of the wafer is completed under the combined action of chemistry and machinery.
During polishing, a large amount of heat is generated due to friction between the wafer and the polishing pad and micro-cutting action, resulting in excessive temperature. However, for chemical mechanical polishing, chemical components in the polishing solution and chemical action on the surface of the wafer need to be performed at a certain temperature, and if the temperature is too high, the chemical action is too fast, and the chemical action and mechanical removal action are unbalanced, so that the processing quality of the wafer is greatly affected.
In addition, during the process of moving the wafer from the loading cup to the position above the polishing pad, there may be a temperature difference between the surface of the wafer and the surface of the polishing pad, so that heat generated by the polishing pad and the polishing liquid thereon is lost, and the temperature of the polishing liquid in the wafer contact area is different from that in other areas, which may also affect the polishing effect of the wafer to some extent.
Therefore, it is necessary to control the temperature during the cmp process to improve the overall performance of the cmp.
Disclosure of Invention
The present invention aims to solve at least to some extent one of the technical problems existing in the prior art.
To this end, the embodiment of the invention provides a polishing temperature control device, a chemical mechanical polishing system and a method, which includes a first temperature adjusting mechanism, which includes a heat transfer roller, a mounting seat and a driving seat, wherein the driving seat is arranged on a machine platen of a polishing device, the mounting seat is arranged on the driving seat, the heat transfer roller is arranged on one side of the driving seat in a cantilever manner, the peripheral side of the heat transfer roller is abutted against the upper side of a polishing pad, and the rotating polishing pad drives the heat transfer roller to rotate around the axis thereof under the action of friction force so as to adjust the temperature of the polishing pad and polishing liquid; the second temperature adjusting mechanism is arranged in the wafer transmission path and used for ejecting fluid to the wafer to adjust the temperature of the bottom surface of the wafer.
As a preferred embodiment, the heat transfer roller is a conical roller, and a fluid pipeline is arranged inside the heat transfer roller; the fluid pipeline is communicated with an external fluid supply source and is connected into the heat transfer roller through a rotary joint at the end part of the heat transfer roller.
As a preferred embodiment, the first temperature adjustment mechanism further includes a rotary motor that is disposed outside the rotary joint and intermittently drives the heat transfer roller to rotate so as to change a contact area of the heat transfer roller with the polishing pad.
As a preferred embodiment, the second temperature adjustment mechanism is arranged between the polishing disk and the loading cup and comprises a fluid buffer part and a nozzle; the nozzle is arranged at the top of the fluid buffer part, and the fluid buffer part is communicated with an external fluid supply source through a pipeline.
As a preferred embodiment, the nozzles are uniformly arranged along the length direction of the fluid buffer part, and the arrangement length of the nozzles is greater than or equal to the diameter of the wafer.
As a preferred embodiment, the driving seat is arranged on the outer peripheral side of the polishing disk and can drive the mounting seat and the heat transfer roller on the mounting seat to rotate so as to adjust the arrangement position of the heat transfer roller.
As a preferred embodiment, the driving seat can drive the heat transfer roller to rotate to the upper side of the second temperature adjusting mechanism, and the nozzle of the second temperature adjusting mechanism ejects the fluid toward the heat transfer roller to clean the outer peripheral side thereof.
As a preferred embodiment, the heat transfer roller is made of a material having high thermal conductivity to maintain the heat transfer roller in a low temperature state by a low temperature fluid circulating in a fluid line.
In addition, the invention also discloses a chemical mechanical polishing system which comprises the polishing temperature control device.
Furthermore, the present invention also discloses a chemical mechanical polishing method using the above chemical mechanical polishing system, comprising:
s1, the polishing disk rotates, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s2, the liquid supply part stops spraying deionized water and supplies polishing liquid to the polishing pad, the heat transfer roller of the first temperature adjusting mechanism is driven to rotate by the rotating polishing pad, and the temperature of the polishing pad and the polishing liquid is adjusted in a contact mode;
s3, the carrier head sucks the wafer placed in the loading cup and moves towards the polishing disk, the carrier head rotates when passing through the second temperature adjusting mechanism, and the nozzle of the second temperature adjusting mechanism sprays fluid towards the rotating wafer to adjust the temperature of the bottom surface of the wafer in a non-contact mode;
and S4, moving the carrier head to the upper side of the polishing disk and pressing the wafer against the polishing pad, and rotating and horizontally moving the carrier head to implement the chemical mechanical polishing of the wafer.
The beneficial effects of the invention include:
(1) a first temperature adjusting structure is configured for the polishing pad, and the temperature of the polishing pad and the temperature of the polishing solution are adjusted in a contact mode so as to change the polishing condition of the wafer and improve the polishing uniformity of the wafer;
(2) a second temperature regulating mechanism is arranged in the wafer transmission path to eject fluid to the passing wafer, so as to control the temperature of the bottom surface of the wafer and avoid the influence of temperature difference between the wafer to be polished and the polishing pad and the polishing solution on the removal rate of polishing;
(3) the heat transfer roller of the first temperature adjusting mechanism can rotate to the position above the second temperature adjusting mechanism, and the surface of the heat transfer roller is cleaned in a spraying mode, so that the service life of the first temperature adjusting mechanism is prolonged.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only, and which do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic view showing the construction of a polishing temperature control apparatus according to the present invention;
FIG. 2 is a schematic structural diagram of a first temperature adjustment mechanism according to the present invention;
FIG. 3 is a schematic structural diagram of a second temperature adjustment mechanism according to the present invention;
fig. 4 to 6 are sectional views of the first temperature adjustment mechanism according to the present invention;
FIG. 7 is a schematic view of a chemical mechanical polishing system of the present invention;
FIG. 8 is a flow chart of a method of chemical mechanical polishing according to the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other embodiments that are obvious based on the disclosure of the claims and their description, including those that employ any obvious substitutions and modifications to the embodiments described herein.
The drawings accompanying this specification are for the purpose of illustrating the concepts of the invention and are not necessarily to scale, the drawings being schematic representations of the shapes of the parts and their interrelationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the present invention, "Chemical Mechanical Polishing (CMP)" is also referred to as "Chemical Mechanical Planarization (CMP)", and Wafer (Wafer) is also referred to as Substrate (Substrate), which means equivalent to actual effects.
In the chemical mechanical polishing process, the chemical reaction of the polishing liquid depends on the temperature of the polishing liquid, and the chemical reaction speed is related to the temperature. Therefore, temperature is an important process control parameter for chemical mechanical polishing. The removal rate of wafer polishing needs to be adjusted by controlling the temperature of the polishing pad and the polishing solution thereon, so as to participate in the control of global planarization of the wafer and realize the uniformity of wafer polishing.
FIG. 1 is a schematic diagram of a polishing temperature control apparatus configured in a chemical mechanical polishing system to control a temperature associated with polishing a wafer. The polishing temperature control device comprises a first temperature adjusting mechanism 10 and a second temperature adjusting mechanism 20, wherein the first temperature adjusting mechanism 10 is used for controlling the temperature of a polishing pad on a polishing disc 40 and polishing liquid on the polishing pad, and the second temperature adjusting mechanism 20 is used for controlling the temperature of a wafer in a wafer transmission process so as to reduce the temperature difference between the temperature of the wafer and the temperature of the polishing pad and the temperature of the polishing liquid.
Further, the first temperature adjustment mechanism 10 includes a heat transfer roller 11, a mounting seat 12, and a driving seat 13, as shown in fig. 2, the driving seat 13 is disposed on a platen 30 of the polishing apparatus, the mounting seat 12 is disposed on the driving seat 13, the heat transfer roller 11 is disposed on one side of the driving seat 13 in a cantilevered manner, an outer peripheral side of the heat transfer roller 11 abuts against an upper side of the polishing pad, and the rotating polishing pad drives the heat transfer roller 11 to rotate around its axis to control the temperature of the polishing pad and the temperature of the polishing liquid.
Further, the second temperature adjusting mechanism 20 is disposed in the wafer transmission path to eject the fluid to the wafer passing through the second temperature adjusting mechanism to control the temperature of the bottom surface of the wafer. In the embodiment shown in fig. 1, the second temperature adjustment mechanism 20 is disposed between the polishing platen 40 and the loading cup 50 to adjust the temperature of the wafer during the transfer from the loading cup 50 to the polishing platen 40.
Fig. 3 is a schematic structural diagram of a second temperature adjustment mechanism 20 according to the present invention, the second temperature adjustment mechanism 20 includes a fluid buffer portion 21 and a nozzle 22, the nozzle 22 is disposed on the top of the fluid buffer portion 21, and the fluid buffer portion 21 is communicated with an external fluid supply source (not shown) through a pipeline.
The nozzles 22 are uniformly arranged along the length direction of the fluid buffer portion 21, and the arrangement length of the nozzles 22 is greater than or equal to the diameter of the wafer, so that the fluid sprayed by the nozzles 22 covers the bottom surface of the wafer.
As an embodiment of the present invention, the fluid sprayed from the nozzle 22 may be deionized water and/or clean air with a certain temperature to control the temperature of the bottom surface of the wafer, so that the temperature of the bottom surface of the wafer is approximately the same as the temperature of the polishing pad and the polishing liquid thereon. With such an arrangement, the wafer can be prevented from being used as an external cold source to interfere the control of the first temperature adjustment mechanism 10 on the temperature of the polishing pad. As an embodiment of the invention, the temperature at which the nozzle 22 ejects the fluid is dependent on the polishing process, and typically the temperature at which the nozzle 22 ejects the fluid is 30-50 ℃.
As an embodiment of the present invention, the heat transfer roller 11 is a tapered roller, and a fluid line 11a is disposed inside the tapered roller, and as shown in FIG. 4, the fluid line 11a is connected to the heat transfer roller 11 through a rotary joint 14 at an end of the heat transfer roller 11, and the fluid line 11a is communicated with an external fluid supply source (not shown). The heat transfer roller 11 is provided as a tapered roller such that the contact area of the heat transfer roller 11 with the polishing pad is different in the radial direction to flexibly control the temperature of the polishing pad and the polishing liquid thereon. As a variation of this embodiment, a separate temperature control module may be disposed inside the heat transfer roller 11 to control the temperature of each temperature control module as required to adjust the temperature of different regions of the polishing pad.
In FIG. 4, the first temperature adjusting mechanism 10 further includes a rotary motor 15 disposed outside the rotary joint 14 and adapted to intermittently drive the heat transfer roller 11 to rotate so as to change the contact area of the heat transfer roller 11 with the polishing pad. With this arrangement, it is possible to effectively prevent the polishing crystallization from increasing due to the local part of the heat transfer roller 11 always coming into contact with the polishing pad.
As another embodiment of the present invention, the fluid pipeline 11a is disposed inside the heat transfer roller 11 of the first temperature adjusting mechanism 10, and the fluid pipeline 11a is disposed in a zigzag manner along the longitudinal direction of the heat transfer roller 11, as shown in fig. 5, so as to increase the uniformity and density of the disposition of the fluid pipeline 11a and improve the effectiveness of the heat transfer roller 11.
Further, a plurality of independent heat conducting modules may be disposed inside the heat transfer roller 11, and the heat conducting modules may be disposed along the length direction of the heat transfer roller 11. In the embodiment shown in fig. 6, a first heat conduction module 11b and a second heat conduction module 11c may be provided inside the heat transfer roller 11. The temperature of the fluid introduced into the first heat conduction module 11b and the second heat conduction module 11c can be flexibly set according to the requirements of working conditions, so that the temperature of the polishing pad along the radius direction is different, the chemical mechanical polishing speed is controlled, and the material removal speed is controlled.
It can be understood that the heat transfer roller 11 has a tapered structure, and a heat conduction module with a larger size is arranged in an area with a larger cross-sectional size of the heat transfer roller, so as to increase the temperature control of the edge area of the polishing pad and enhance the polishing control of the edge part of the wafer.
In fig. 2, the drive base 13 is provided on the outer peripheral side of the polishing platen 40, and can swing the mounting base 12 and the heat transfer roller 11. Specifically, the heat transfer roller 11 of the first temperature adjustment mechanism 10 is usually disposed on the upper side of the polishing pad, and when the polishing pad does not need to be temperature-adjusted, the mechanism provided to the drive base 11 can swing the heat transfer roller 11 to the outside of the polishing pad. In one aspect of this embodiment, the driving seat 13 can also drive the heat transfer roller 11 to swing to the upper side of the second temperature adjusting mechanism 20, and the nozzle 22 of the second temperature adjusting mechanism 20 sprays fluid toward the heat transfer roller 11 to clean the outer peripheral side thereof, so as to reduce polishing crystals on the outer peripheral side of the heat transfer roller 11 and prolong the service life of the first temperature adjusting mechanism 10.
As an embodiment of the present invention, the heat transfer roller 11 is made of a high thermal conductivity material to keep the heat transfer roller 11 at a low temperature by a low temperature fluid circulating in the fluid line 11 a.
The heat transfer roll 11 is disposed above the polishing pad and can be moved down into contact with the polishing pad surface or into contact with the polishing slurry on the polishing pad surface. The heat transfer roller 11 is passively free-rolling by frictional force while being in contact with the polishing pad, thereby cooling the polishing pad or the polishing liquid.
The surface of the heat transfer roller 11 is kept at a low temperature to cool the polishing pad or the polishing liquid in contact with the surface of the heat transfer roller 11, thereby lowering the polishing temperature. In some embodiments, the heat transfer roller 11 may also be driven to roll by the rotating motor 1, and when the polishing pad rotates, the heat transfer roller 11 automatically rolls around its central axis under the action of contact friction between the heat transfer roller 11 and the polishing pad, so as to improve the temperature regulation capability of the heat transfer roller 11 on the polishing pad and the polishing solution.
As an embodiment of the present invention, the heat transfer roller 11 is made of plastic, and the outer peripheral side thereof is coated with a stain-resistant coating to prevent the polishing crystals from adhering to the outer peripheral side of the heat transfer roller 11. Preferably, the stain resistant coating is parylene C, which has a thickness of 0.01mm to 0.1 mm. The stain-resistant coating needs to be uniformly applied to the outer peripheral side of the heat transfer roller 11 to ensure the stain resistance of the heat transfer roller 11.
Furthermore, the invention also discloses a chemical mechanical polishing system, which comprises the polishing temperature control device, wherein the polishing temperature control device comprises a first temperature regulating mechanism 10 and a second temperature regulating mechanism 20, as shown in fig. 7. The chemical mechanical polishing system further includes a polishing disk 40, a polishing pad, a carrier head 60, a dresser 70, and a liquid supply section 80; the polishing pad is disposed on the upper surface of the polishing disk 40 and rotates therewith along the axis Ax; a horizontally movable carrier head 60 disposed above the polishing pad, the lower surface of which receives a wafer to be polished; the dresser 70 includes a dresser arm and a dresser head, which are provided on one side of the polishing disk 40, the dresser arm driving the rotating dresser head to swing to dress the surface of the polishing pad; the liquid supply part 80 is provided at an upper side of the polishing pad to distribute the polishing liquid to the surface of the polishing pad.
During polishing operation, the carrier head 60 presses the surface of the wafer to be polished against the surface of the polishing pad, and the carrier head 60 rotates and reciprocates along the radial direction of the polishing disk 40 to gradually remove the surface of the wafer contacting with the polishing pad; at the same time, the polishing platen 40 rotates, and the liquid supply part 80 sprays polishing liquid onto the surface of the polishing pad. Under the chemical action of the polishing liquid, the wafer is rubbed against the polishing pad by the relative movement of the carrier head 60 and the polishing pad 40 for polishing.
The polishing solution composed of submicron or nanometer abrasive particles and a chemical solution flows between a wafer and a polishing pad, the polishing solution is uniformly distributed under the action of transmission and rotation centrifugal force of the polishing pad to form a layer of liquid film between the wafer and the polishing pad, chemical components in the liquid and the wafer generate chemical reaction to convert insoluble substances into soluble substances, then the chemical reactants are removed from the surface of the wafer through micro-mechanical friction of the abrasive particles and dissolved in the flowing liquid to be taken away, namely, surface materials are removed in the alternate process of chemical film forming and mechanical film removing to realize surface planarization treatment, thereby achieving the purpose of global planarization.
The conditioner 70 is used to condition and activate the topography of the polishing pad during chemical mechanical polishing. The dresser 70 can remove foreign particles remaining on the surface of the polishing pad, such as abrasive particles in the polishing slurry and waste materials falling off from the surface of the wafer, and can also flatten the deformation of the surface of the polishing pad caused by grinding, thereby ensuring the consistency of the surface topography of the polishing pad during polishing and further stabilizing the polishing removal rate.
In addition, the present invention also discloses a chemical mechanical polishing method, using the above-mentioned chemical mechanical polishing system, whose flow chart, as shown in fig. 8, comprises the following steps:
s1, the polishing disk 40 rotates, and the liquid supply part 80 sprays deionized water to the polishing pad to remove impurities on the surface and wet the surface of the polishing pad;
this step is a preparation before wafer polishing, and in order to prevent the polishing pad from being disturbed by the foreign matter on the upper portion of the polishing pad, it is necessary to remove the foreign matter on the surface of the polishing pad. In order to secure the state of the polishing liquid on the upper portion of the polishing pad, it is necessary to perform an appropriate wetting treatment on the polishing pad.
S2, the liquid supply part 80 stops spraying deionized water and supplies polishing liquid to the polishing pad, the heat transfer roller 11 of the first temperature adjusting mechanism 10 is driven to rotate by the rotating polishing pad, and the temperature of the polishing pad and the polishing liquid are adjusted in a contact manner;
in this step, it is necessary to preset parameters related to the first temperature adjustment mechanism 10. If the temperature of the fluid supply source to the fluid line 11a inside the heat transfer roll is set to 50 + -2 deg.C, the fluid rate is 30ml/min to regulate the temperature of the polishing pad and the polishing liquid thereon.
In some embodiments, in order to better control the polishing pad and the polishing solution thereon, a temperature measuring device is disposed above the polishing pad, and the temperature measuring device is in signal connection with the first temperature adjusting mechanism 10, so as to flexibly adjust the temperature of the fluid supply source and the fluid speed through closed-loop control such as PID, and thus, the temperature of the polishing pad and the polishing solution can be accurately controlled.
S3, the carrier head 60 sucks the wafer placed in the loading cup 50 and moves towards the polishing disk 40, the carrier head 60 rotates when passing through the second temperature adjusting mechanism 20, and the nozzle 22 of the second temperature adjusting mechanism 20 sprays fluid towards the rotating wafer to adjust the temperature of the bottom surface of the wafer in a non-contact manner;
specifically, the carrier head 60 rotates around its trace at a low speed, such as 20-50 prm; the nozzle 22 sprays a fluid having a certain temperature to adjust the temperature of the bottom surface of the wafer. In this step, the setting of the first temperature control means 10 in step S2 may be referred to as the parameter setting of the fluid supply source that communicates with the fluid buffer portion 21 of the second temperature control means 20.
S4, the carrier head 60 moves to the upper side of the polishing platen 40 and presses the wafer against the polishing pad, and the carrier head 60 rotates and moves horizontally to perform chemical mechanical polishing of the wafer.
Specifically, the temperature of the polishing pad and the polishing solution thereon is controlled within a process requirement range, and the temperature of the bottom surface of the wafer attracted by the carrier head 60 is substantially the same as the temperature of the polishing pad, or the temperature difference is relatively small, so that the temperature during chemical mechanical polishing is accurately controlled, and the uniformity of wafer polishing is favorably improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (5)
1. A polishing temperature control apparatus, comprising:
the first temperature adjusting mechanism comprises a heat transfer roller, a mounting seat and a driving seat, the driving seat is arranged on a machine platen of the polishing equipment, the mounting seat is arranged on the driving seat, the heat transfer roller is arranged on one side of the driving seat in a cantilever manner, the peripheral side of the heat transfer roller is abutted against the upper side of the polishing pad, and the rotating polishing pad drives the heat transfer roller to rotate around the axis of the rotating polishing pad under the action of friction force so as to adjust the temperature of the polishing pad and polishing liquid;
the second temperature regulating mechanism is arranged in the wafer transmission path and is used for spraying fluid to the passing wafer to regulate the temperature of the bottom surface of the wafer;
the heat transfer roller is a conical roller, and a fluid pipeline is arranged in the heat transfer roller; the fluid pipeline is communicated with an external fluid supply source and is connected into the heat transfer roller through a rotary joint at the end part of the heat transfer roller;
the first temperature adjusting mechanism also comprises a rotating motor which is arranged outside the rotating joint and drives the heat transfer roller to rotate intermittently so as to change the contact area of the heat transfer roller and the polishing pad;
the second temperature adjusting mechanism is arranged between the polishing disk and the loading cup and comprises a fluid buffer part and a nozzle; the nozzle is arranged at the top of the fluid buffer part, and the fluid buffer part is communicated with an external fluid supply source through a pipeline;
the nozzles are uniformly arranged along the length direction of the fluid cache part, and the arrangement length of the nozzles is greater than or equal to the diameter of the wafer; the driving seat is arranged on the outer peripheral side of the polishing disk and can drive the mounting seat and the heat transfer roller thereon to rotate so as to adjust the arrangement position of the heat transfer roller.
2. A polishing temperature controlling apparatus according to claim 1, wherein said driving base is capable of driving the heat transfer roller to rotate to an upper side of the second temperature adjusting mechanism, and the nozzle of the second temperature adjusting mechanism ejects the fluid toward the heat transfer roller to clean an outer peripheral side thereof.
3. The polishing temperature control apparatus according to claim 1, wherein the heat transfer roller is made of a material having high thermal conductivity to maintain the heat transfer roller in a low temperature state by a low temperature fluid circulating in the fluid line.
4. A chemical mechanical polishing system comprising the polishing temperature control apparatus according to any one of claims 1 to 3.
5. A chemical mechanical polishing method using the chemical mechanical polishing system of claim 4, comprising:
s1, the polishing disk rotates, and the liquid supply part sprays deionized water to the polishing pad to remove impurities on the surface of the polishing pad and wet the surface of the polishing pad;
s2, the liquid supply part stops spraying deionized water and supplies polishing liquid to the polishing pad, the heat transfer roller of the first temperature adjusting mechanism is driven to rotate by the rotating polishing pad, and the temperature of the polishing pad and the polishing liquid is adjusted in a contact mode;
s3, the carrier head sucks the wafer placed in the loading cup and moves towards the polishing disk, the carrier head rotates when passing through the second temperature adjusting mechanism, and the nozzle of the second temperature adjusting mechanism sprays fluid towards the rotating wafer to adjust the temperature of the bottom surface of the wafer in a non-contact mode;
and S4, moving the carrier head to the upper side of the polishing disk and pressing the wafer against the polishing pad, and rotating and horizontally moving the carrier head to implement the chemical mechanical polishing of the wafer.
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