CN113725076B - Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor - Google Patents
Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor Download PDFInfo
- Publication number
- CN113725076B CN113725076B CN202110790401.1A CN202110790401A CN113725076B CN 113725076 B CN113725076 B CN 113725076B CN 202110790401 A CN202110790401 A CN 202110790401A CN 113725076 B CN113725076 B CN 113725076B
- Authority
- CN
- China
- Prior art keywords
- hydrogen
- diamond
- ohmic contact
- deposited
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 67
- 239000010432 diamond Substances 0.000 title claims abstract description 67
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000001257 hydrogen Substances 0.000 title claims abstract description 62
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000005641 tunneling Effects 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 238000004381 surface treatment Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Abstract
According to the preparation method of the hydrogen terminal diamond tunneling ohmic contact resistor, the ultra-thin high work function dielectric layer is adopted to form the ultra-high concentration hole layer on the surface of the hydrogen terminal diamond, then a layer of metal is deposited, ohmic contact is formed by utilizing the tunneling principle, and the ohmic contact resistor is greatly reduced. The invention can be compatible with the existing technology, has simple operation and low cost, does not need extra technology equipment, and has good application prospect.
Description
Technical Field
The invention belongs to the technical field of microelectronic technology material growth, and particularly relates to a preparation method of a hydrogen termination diamond tunneling ohmic contact resistor.
Background
The diamond is a new generation ultra-wide band gap semiconductor material after the third generation wide band gap semiconductor material GaN, has the advantages of large band gap, high carrier mobility and the like, and has great application potential in high-frequency and high-power electronic devices. While diamond bulk doping has been difficult to achieve, hydrogen terminated diamond with c—h bond covered surfaces has become the mainstay of choice for diamond field effect transistor research.
Research has shown that ohmic contact resistance is large, which can seriously hinder the characteristics of the device. At present, the hydrogen terminal diamond ohmic contact is mainly prepared based on metals such as Au, ti/Au, pd and the like, and the ohmic contact resistance value is reduced to a certain extent through annealing and other processes in the preparation process, but is at least an order of magnitude higher than that of other semiconductors such as Si, gaN and the like.
Therefore, the ohmic contact resistance value of the hydrogen termination diamond prepared by the existing preparation method is larger, and the performance requirement of the device cannot be met.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a preparation method of a hydrogen termination diamond tunneling ohmic contact resistor. The technical problems to be solved by the invention are realized by the following technical scheme:
The preparation method of the hydrogen termination diamond tunneling ohmic contact resistor provided by the invention comprises the following steps:
selecting CVD epitaxial hydrogen termination diamond as a substrate;
sequentially cleaning the substrate in acetone, alcohol and deionized water;
carrying out hydrogen plasma surface treatment on the cleaned substrate to form hydrogen terminal diamond;
depositing a layer of high work function medium with the thickness of 0.5-1.0nm on the hydrogen-terminated diamond so as to form a high-concentration hole layer on the surface of the hydrogen-terminated diamond;
Depositing a metal layer on the surface of the hydrogen terminal diamond deposited with the high work function medium so as to form low ohmic contact resistance with the hydrogen terminal diamond;
And annealing the deposited hydrogen-terminated diamond.
Optionally, the thickness of the substrate is 0.3-1.0mm, and the time for cleaning the substrate is 5-30min.
Optionally, the performing hydrogen plasma surface treatment on the cleaned substrate to form a hydrogen terminated diamond includes:
And placing the cleaned substrate in a Microwave Plasma Chemical Vapor Deposition (MPCVD) system, and performing hydrogen plasma surface treatment to form the hydrogen-terminated diamond.
Optionally, when the substrate is subjected to hydrogen plasma surface treatment, the hydrogen flow of the Microwave Plasma Chemical Vapor Deposition (MPCVD) system is 200-1000 sccm, the temperature is 600-900 ℃, the pressure is 50-200mbar, the microwave power is 1000-3000W, the treatment time is 10-30min, and the methane concentration is 0.1-1%.
Optionally, the high work function medium is M oO3、WO3 or V 2O5.
Optionally, depositing a metal layer on the hydrogen terminated diamond surface where the high work function medium is deposited includes:
And depositing a layer of Au layer with the thickness of 20-100nm on the surface of the hydrogen terminal diamond deposited with the high work function medium.
Optionally, the annealing treatment of the deposited hydrogen terminated diamond includes:
and annealing the deposited hydrogen-terminated diamond in a rapid thermal annealing device for 2-10min to finish the preparation of the ohmic contact resistance, wherein the annealing temperature is 300-700 ℃.
According to the preparation method of the hydrogen terminal diamond tunneling ohmic contact resistor, the ultra-thin high work function dielectric layer is adopted to form the ultra-high concentration hole layer on the surface of the hydrogen terminal diamond, then a layer of metal is deposited, ohmic contact is formed by utilizing the tunneling principle, and the ohmic contact resistor is greatly reduced. The invention can be compatible with the existing technology, has simple operation and low cost, does not need extra technology equipment, and has good application prospect. The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic flow chart of a method for preparing a hydrogen termination diamond tunneling ohmic contact resistor;
Fig. 2 is a schematic view of an ohmic contact structure according to the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Real-time example 1
As shown in fig. 1, the preparation method of the hydrogen termination diamond tunneling ohmic contact resistor provided by the invention comprises the following steps:
s1, selecting CVD epitaxial hydrogen terminal diamond as a substrate;
the crystal orientation of the substrate is not limited, and the thickness of the substrate is 0.3-1.0mm.
S2, cleaning the substrate in acetone, alcohol and deionized water in sequence;
Wherein the time for cleaning the substrate is 5-30min.
S3, performing hydrogen plasma surface treatment on the cleaned substrate to form hydrogen terminal diamond;
S4, depositing a layer of high work function medium with the thickness of 0.5-1.0nm on the hydrogen terminal diamond so that the high work function medium forms a high concentration hole layer on the surface of the hydrogen terminal diamond;
Wherein the high work function medium is M oO3、WO3 or V 2O5.
It can be understood that the materials such as M oO3、WO3 or V 2O5 have large work functions, and a layer of two-dimensional hole gas with extremely high carrier concentration can be formed on the surface of the hydrogen-terminated diamond through transfer doping.
S5, depositing a metal layer on the surface of the hydrogen terminal diamond deposited with the high work function medium so as to enable the metal layer, the high concentration hole layer and the hydrogen terminal diamond to form low ohmic contact resistance;
And S6, annealing the deposited hydrogen terminal diamond.
Referring to fig. 2, when a voltage is applied to the metal layer (metal electrode), the current of the metal layer tunnels the high concentration hole layer (ultra-thin dielectric layer) to the surface of the hydrogen termination diamond, exhibiting low ohmic contact resistance characteristics. Based on the phenomenon, the preparation method of the hydrogen termination diamond tunneling ohmic contact resistance can realize ultralow ohmic contact resistance.
According to the preparation method of the hydrogen terminal diamond tunneling ohmic contact resistor, the ultra-thin high work function dielectric layer is adopted to form the ultra-high concentration hole layer on the surface of the hydrogen terminal diamond, then a layer of metal is deposited, ohmic contact is formed by utilizing the tunneling principle, and the ohmic contact resistor is greatly reduced. The invention can be compatible with the existing technology, has simple operation and low cost, does not need extra technology equipment, and has good application prospect.
As an alternative embodiment of the present invention, the performing a hydrogen plasma surface treatment on the cleaned substrate to form a hydrogen terminated diamond includes:
And placing the cleaned substrate in a Microwave Plasma Chemical Vapor Deposition (MPCVD) system, and performing hydrogen plasma surface treatment to form the hydrogen-terminated diamond.
As an alternative embodiment of the invention, when the substrate is subjected to hydrogen plasma surface treatment, the hydrogen flow rate of the Microwave Plasma Chemical Vapor Deposition (MPCVD) system is 200-1000 sccm, the temperature is 600-900 ℃, the pressure is 50-200mbar, the microwave power is 1000-3000W, the treatment time is 10-30min, and the methane concentration is 0.1% -1%.
As an alternative embodiment of the present invention, the depositing a metal layer on the hydrogen terminated diamond surface where the high work function dielectric is deposited includes:
And depositing a layer of Au layer with the thickness of 20-100nm on the surface of the hydrogen terminal diamond deposited with the high work function medium.
As an alternative embodiment of the present invention, the annealing the deposited hydrogen terminated diamond includes:
and annealing the deposited hydrogen-terminated diamond in a rapid thermal annealing device for 2-10min to finish the preparation of the ohmic contact resistance, wherein the annealing temperature is 300-700 ℃.
Example two
In particular implementations, the present invention may employ an octagonal HPHT diamond-based substrate for growing diamond epitaxial films. The specific ohmic contact structure preparation process is as follows:
In this example, single crystal diamond with a crystal orientation of (100) and a thickness of 0.3mm was selected as a substrate, and the substrate was sequentially washed in acetone, alcohol, and deionized water for 5 minutes.
And placing the cleaned substrate in a Microwave Plasma Chemical Vapor Deposition (MPCVD) system for hydrogen plasma surface treatment to form the hydrogen-terminated diamond. In the treatment process, the hydrogen flow is 200sccm, the temperature is 600 ℃, the pressure is 50mbar, the microwave power is 1000W, the treatment time is 10min, and the methane concentration is 0.1%;
Placing the hydrogen-terminated diamond in a thermal evaporation device, and depositing a layer of high work function medium MoO3 with the thickness of 0.5 nm;
Depositing a layer of Au film on the surface of the sample on which the medium is deposited, wherein the thickness of the Au film is 20nm; . And (3) annealing the sample in a rapid thermal annealing device for 2min at the annealing temperature of 300 ℃ to finish the preparation of ohmic contact.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (6)
1. The preparation method of the hydrogen termination diamond tunneling ohmic contact resistor is characterized by comprising the following steps of:
selecting CVD epitaxial hydrogen termination diamond as a substrate;
sequentially cleaning the substrate in acetone, alcohol and deionized water;
carrying out hydrogen plasma surface treatment on the cleaned substrate to form hydrogen terminal diamond;
Depositing a layer of high work function medium with the thickness of 0.5-1.0nm on the hydrogen-terminated diamond so as to form a high-concentration hole layer on the surface of the hydrogen-terminated diamond; the high work function medium is M oO3、WO3 or V 2O5;
Depositing a metal layer on the surface of the hydrogen terminal diamond deposited with the high work function medium so as to form low ohmic contact resistance with the hydrogen terminal diamond;
And annealing the deposited hydrogen-terminated diamond.
2. The method of claim 1, wherein the substrate has a thickness of 0.3-1.0mm and is cleaned for a period of 5-30 minutes.
3. The method of preparing as claimed in claim 1, wherein the subjecting the cleaned substrate to a hydrogen plasma surface treatment to form a hydrogen terminated diamond comprises:
And placing the cleaned substrate in a Microwave Plasma Chemical Vapor Deposition (MPCVD) system, and performing hydrogen plasma surface treatment to form the hydrogen-terminated diamond.
4. The method according to claim 3, wherein the hydrogen flow rate of the Microwave Plasma Chemical Vapor Deposition (MPCVD) system is 200-1000 sccm, the temperature is 600-900 ℃, the pressure is 50-200mbar, the microwave power is 1000-3000W, the treatment time is 10-30min, and the methane concentration is 0.1% -1%.
5. The method of claim 1, wherein depositing a metal layer on the hydrogen terminated diamond surface where the high work function dielectric is deposited comprises:
And depositing a layer of Au layer with the thickness of 20-100nm on the surface of the hydrogen terminal diamond deposited with the high work function medium.
6. The method of preparing as claimed in claim 1, wherein the annealing the deposited hydrogen terminated diamond comprises:
and annealing the deposited hydrogen-terminated diamond in a rapid thermal annealing device for 2-10min to finish the preparation of the ohmic contact resistance, wherein the annealing temperature is 300-700 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110790401.1A CN113725076B (en) | 2021-07-13 | Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110790401.1A CN113725076B (en) | 2021-07-13 | Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113725076A CN113725076A (en) | 2021-11-30 |
| CN113725076B true CN113725076B (en) | 2024-06-25 |
Family
ID=
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104123973A (en) * | 2013-04-25 | 2014-10-29 | 技术研究及发展基金有限公司 | Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104123973A (en) * | 2013-04-25 | 2014-10-29 | 技术研究及发展基金有限公司 | Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof |
Non-Patent Citations (1)
| Title |
|---|
| " Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer";Zeyang Ren et.al.;《Results in Physics》;第1-4页 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gildenblat et al. | High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method | |
| CN102403209B (en) | Preparation method for ohmic contact electrode based on diamond film field effect transistor | |
| JPWO2007086196A1 (en) | Method for manufacturing silicon carbide semiconductor device | |
| CN103000669A (en) | Source-drain buried graphene transistor device on diamond-like carbon substrate and manufacture method | |
| CN105336579A (en) | Semiconductor element and preparation method thereof | |
| CN109004029A (en) | With metal oxide/silica gatestack GaN base MOS-HEMT device and preparation method thereof | |
| CN1012775B (en) | Semiconductor bottom material | |
| CN108550624A (en) | A kind of high heat dispersion double grid gallium oxide field-effect thin film transistor (TFT) and preparation method thereof | |
| CN113725076B (en) | Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor | |
| CN113725006A (en) | High-voltage-resistance low-leakage silicon-based AlN capacitor and preparation method thereof | |
| US5155559A (en) | High temperature refractory silicide rectifying contact | |
| CN113725076A (en) | Preparation method of hydrogen terminal diamond tunneling ohmic contact resistor | |
| CN115394758B (en) | Gallium oxide Schottky diode and preparation method thereof | |
| CN208368513U (en) | Based on metal oxide/silica gatestack GaN base MOS-HEMT device | |
| CN103745923A (en) | Method for growing gate dielectric on gallium nitride substrate and electrical performance testing method | |
| CN107331701A (en) | A kind of diamond channel conduction characteristic optimizing method | |
| CN113871473A (en) | Device and method for controlling van der Waals epitaxy and remote epitaxy growth modes | |
| CN112133741A (en) | Enhanced hydrogen terminal diamond field effect transistor and preparation method thereof | |
| CN110071044A (en) | The preparation method and field-effect tube of field-effect tube | |
| CN111223925A (en) | Bidirectional blocking power device based on AlN/GaN superlattice channel and manufacturing method | |
| CN205542792U (en) | Reduce gaN device of leakage current | |
| CN116732485A (en) | High-carrier mobility hydrogen-terminated diamond and preparation method thereof | |
| WO2023162448A1 (en) | Radio-frequency device substrate, and method for manufacturing same | |
| Miyata et al. | Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure using polycrystalline diamond films | |
| CN114864662B (en) | Schottky structure based on TiN/TaN template and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |