CN113725073A - Manufacturing method of nitrogen-doped graphene field effect transistor - Google Patents

Manufacturing method of nitrogen-doped graphene field effect transistor Download PDF

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Publication number
CN113725073A
CN113725073A CN202010453463.9A CN202010453463A CN113725073A CN 113725073 A CN113725073 A CN 113725073A CN 202010453463 A CN202010453463 A CN 202010453463A CN 113725073 A CN113725073 A CN 113725073A
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nitrogen
field effect
effect transistor
graphene field
graphene
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岳峻逸
孙连峰
任红轩
池建义
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Baotou Rare Earth Research And Development Center Chinese Academy Of Sciences
National Center for Nanosccience and Technology China
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Baotou Rare Earth Research And Development Center Chinese Academy Of Sciences
National Center for Nanosccience and Technology China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Abstract

The embodiment of the invention relates to the technical field of transistors, and discloses a manufacturing method of a nitrogen-doped graphene field effect transistor. The method for manufacturing the nitrogen-doped graphene field effect transistor comprises the steps of immersing the graphene field effect transistor to be processed into a nitrogen-containing solution, and irradiating an exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by laser to obtain the nitrogen-doped graphene field effect transistor. Therefore, the nitrogen-doped graphene field effect transistor is manufactured by irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution with laser, the manufacturing performance is better, and the technical problem that the doping operation is difficult to perform better is solved; meanwhile, high-temperature heating is not needed, so that the metal electrode in the graphene FET can be prevented from being damaged by high-temperature heat treatment; and the nitrogen doping operation can be carried out at the laser irradiation position, so that the doping position can be accurately controlled.

Description

Manufacturing method of nitrogen-doped graphene field effect transistor
Technical Field
The invention relates to the technical field of transistors, in particular to a manufacturing method of a nitrogen-doped graphene field effect transistor.
Background
As the nano-scale of the conventional silicon-based Field Effect Transistor (FET) gradually approaches the theoretical limit, graphene having ultra-high carrier mobility, bipolar Field Effect and monoatomic layer thickness is regarded as an ideal material for replacing silicon as a FET conduction channel.
Wherein the ultra-high carrier mobility may be about 200000cm2V-1s-1The monoatomic layer thickness can be about 0.35 nm.
As for a specific use mode of graphene, in order to use graphene as a FET conduction channel material, the graphene may be doped to regulate its conduction type. For example, if the modulation is n-type, the conduction can be achieved through electrons; if the modulation is p-type, conduction can be achieved through holes.
However, at present, there is no doping method that can achieve the doping operation for the graphene FET well.
Disclosure of Invention
In order to solve the technical problem that the doping operation for the graphene FET is difficult to achieve better in the conventional doping mode, the embodiment of the invention provides a manufacturing method of a nitrogen-doped graphene field effect transistor.
The embodiment of the invention provides a manufacturing method of a nitrogen-doped graphene field effect transistor, which comprises the following steps:
immersing the graphene field effect transistor to be processed with the exposed channel in a nitrogen-containing solution;
and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by laser to obtain the nitrogen-doped graphene field effect transistor.
Preferably, the step of immersing the graphene field effect transistor to be treated with the exposed channel into a nitrogen-containing solution specifically comprises:
immersing the graphene field effect transistor to be treated with the exposed channel in a container containing a nitrogen-containing solution;
correspondingly, the exposing channel of the graphene field effect transistor to be processed in the nitrogen-containing solution is irradiated by laser to obtain the nitrogen-doped graphene field effect transistor, and the method specifically comprises the following steps:
and moving the container through a moving platform, and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution through laser to obtain the nitrogen-doped graphene field effect transistor.
Preferably, the nitrogen-containing solution is a saturated aqueous ammonium chloride solution.
Preferably, the laser is a femtosecond laser.
Preferably, before the graphene field effect transistor to be processed with the exposed channel is immersed in the nitrogen-containing solution, the method for manufacturing the nitrogen-doped graphene field effect transistor further comprises:
forming graphene on a substrate;
and forming a source electrode and a drain electrode on the graphene to obtain the graphene field effect transistor to be processed with the exposed channel.
Preferably, before forming the graphene on the substrate, the method for manufacturing the nitrogen-doped graphene field effect transistor further includes:
and forming a dielectric layer on the back gate to obtain the substrate.
Preferably, before forming the graphene on the substrate, the method for manufacturing the nitrogen-doped graphene field effect transistor further includes:
and carrying out ultrasonic treatment and etching treatment on the substrate.
Preferably, the forming a source and a drain on the graphene to obtain a graphene field effect transistor to be processed with an exposed channel specifically includes:
and forming a source electrode and a drain electrode on the graphene by a standard electron beam exposure method or a magnetron sputtering method to obtain the graphene field effect transistor to be processed with the exposed channel.
Preferably, the source electrode and the drain electrode are molybdenum electrodes.
Preferably, the source electrode and the drain electrode have a thickness of 80nm to 120 nm.
According to the manufacturing method of the nitrogen-doped graphene field effect transistor, the graphene field effect transistor to be processed with the exposed channel can be immersed in a nitrogen-containing solution; and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by laser to obtain the nitrogen-doped graphene field effect transistor. Therefore, the nitrogen-doped graphene field effect transistor is manufactured in a mode of irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by using laser, the manufacturing performance of the manufacturing mode is better, and the technical problem that the doping operation facing the graphene FET is difficult to achieve better in the conventional doping mode is solved; meanwhile, high-temperature heating is not needed, so that the metal electrode in the graphene FET can be prevented from being damaged by high-temperature heat treatment; meanwhile, the nitrogen doping operation time is short, and the efficiency is high; and, since the nitrogen doping operation occurs only at the laser irradiation position, the doping position can be precisely controlled.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a nitrogen-doped graphene field effect transistor according to an embodiment of the present invention;
fig. 2 is a flowchart illustrating a method for fabricating a nitrogen-doped graphene field effect transistor according to another embodiment of the present invention;
FIG. 3 is a block diagram of a transistor fabrication framework of the type provided in accordance with yet another embodiment of the present invention;
fig. 4 is a flowchart illustrating a method for fabricating a nitrogen-doped graphene field effect transistor according to yet another embodiment of the present invention;
FIG. 5a is a schematic diagram of a first structure in the fabrication of a transistor according to yet another embodiment of the present invention;
FIG. 5b is a schematic diagram illustrating a second structure in the fabrication of a transistor according to yet another embodiment of the present invention;
FIG. 5c is a schematic view of a substrate structure according to yet another embodiment of the present invention;
FIG. 6a shows Raman spectra of an exposed channel before and after nitrogen doping according to yet another embodiment of the present invention;
FIG. 6b shows N-1s spectra of a conductive channel before and after nitrogen doping according to yet another embodiment of the present invention;
fig. 6c is a graph illustrating a transfer curve of a conductive channel before and after nitrogen doping according to yet another embodiment of the present invention.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
101 Dielectric layer 401 Container with a lid
102 Back grid 402 Femtosecond laser
201 Graphene 403 Laser
301 Source electrode 404 Mobile platform
302 Drain electrode
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Fig. 1 is a flowchart of a method for manufacturing a nitrogen-doped graphene field effect transistor according to an embodiment of the present invention, as shown in fig. 1, the method includes:
s1, immersing the graphene field effect transistor to be processed with the exposed channel into a nitrogen-containing solution;
s2, irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution through laser to obtain the nitrogen-doped graphene field effect transistor.
It is understood that there is no doping method that can achieve the doping operation for the graphene FET. For ease of understanding, an example of a currently available preparation is set forth herein to distinguish it from the examples of the present invention.
More specifically, the doping operation may be specifically a nitrogen doping operation.
Currently available preparation methods are that an undoped graphene FET is prepared, and then, high-temperature heat treatment is performed in a nitrogen-containing atmosphere to obtain a nitrogen-doped graphene FET.
However, such approaches involve high temperatures above 1000 degrees, and heat treatment may damage the metal electrodes of the FETs; moreover, the heat treatment process is complex and has high requirements on equipment; meanwhile, such a method can only uniformly dope the entire surface of the substrate, and cannot accurately control the doping position.
It can be seen that the currently available preparation methods have many defects, and the doping operation for the graphene FET cannot be well achieved.
Therefore, a new doping operation facing the graphene FET is provided in the embodiment of the present invention, and specifically, the graphene field effect transistor with the exposed graphene channel structure may be immersed in a saturated nitrogen-containing solution, and the graphene channel of the graphene field effect transistor in the solution is irradiated with laser light, so as to obtain the nitrogen-doped graphene field effect transistor.
Therefore, the nitrogen-doped graphene field effect transistor can be manufactured through laser assistance.
Obviously, the embodiment of the invention does not need high-temperature heating, so that the damage of high-temperature heat treatment on the metal electrode in the graphene FET can be avoided; moreover, the process is simpler, and the requirement on equipment is lower; meanwhile, the nitrogen doping operation time is short, and the efficiency is high; and, because the laser irradiation position can only take place nitrogen doping operation, can control the position of doping accurately, be favorable to processing the PN junction.
Therefore, the embodiment of the invention can better overcome the defects in the currently available preparation method.
Wherein embodiments of the present invention will dope nitrogen at the exposed channel.
The metal electrodes in the graphene FET relate to a source and a drain.
Further, regarding the operation of irradiating the graphene channel of the graphene field effect transistor in the solution with laser, a defect and a dangling bond can be induced on the surface of graphene, namely the conductive channel, and a nitrogen-containing radical is ionized in the solution near the surface and combined with the defect and the dangling bond on the surface of the graphene, so that the nitrogen-doped graphene field effect transistor can be prepared.
Therefore, the embodiment of the invention has the advantages of simple process, short time, high efficiency and accurate and controllable nitrogen doping position.
According to the manufacturing method of the nitrogen-doped graphene field effect transistor, the graphene field effect transistor to be processed with the exposed channel can be immersed in a nitrogen-containing solution; and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by laser to obtain the nitrogen-doped graphene field effect transistor. Therefore, the nitrogen-doped graphene field effect transistor is manufactured in a mode of irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by using laser, the manufacturing performance of the manufacturing mode is better, and the technical problem that the doping operation facing the graphene FET is difficult to achieve better in the conventional doping mode is solved; meanwhile, high-temperature heating is not needed, so that the metal electrode in the graphene FET can be prevented from being damaged by high-temperature heat treatment; meanwhile, the nitrogen doping operation time is short, and the efficiency is high; and, since the nitrogen doping operation occurs only at the laser irradiation position, the doping position can be precisely controlled.
Fig. 2 is a flowchart of a method for manufacturing a nitrogen-doped graphene field effect transistor according to another embodiment of the present invention, which is based on the embodiment shown in fig. 1.
In this embodiment, the S1 specifically includes:
and S11, immersing the graphene field effect transistor to be processed with the exposed channel in a container containing a nitrogen-containing solution.
It can be understood that the embodiment of the present invention may provide a specific implementation scenario of a type of nitrogen doping operation.
Reference may be made, among other things, to a frame for the fabrication of transistors of the type shown in fig. 3.
Specifically, a vessel 401 may be provided, the vessel 401 containing a nitrogen-containing solution.
Correspondingly, the S2 specifically includes:
s21, moving the container through the moving platform, and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution through laser to obtain the nitrogen-doped graphene field effect transistor.
Specifically, by moving the container 401, the position of the exposed channel of the graphene field effect transistor to be processed in the container 401 can be moved to precisely control the position where the exposed channel of the graphene FET is irradiated with the laser 403.
Further, referring to fig. 3, mobile platform 404 may be coupled to container 401, and in particular, container 401 may be secured to mobile platform 404, resulting in a movement of the orientation of container 401 by moving the orientation of the entire mobile platform 404.
It can be seen that the FETs can be moved by moving the entire moving platform 404 in order to control the irradiation position.
According to the manufacturing method of the nitrogen-doped graphene field effect transistor, provided by the embodiment of the invention, the position of the exposed channel of the graphene FET, which is irradiated by the laser 403, can be accurately controlled by using the high-precision translation stage.
In addition to the above embodiments, preferably, the nitrogen-containing solution is a saturated aqueous ammonium chloride solution.
Further, the nitrogen-containing solution may be an aqueous ammonia solution.
On the basis of the above embodiment, preferably, the laser 403 is a femtosecond laser.
Further, the femtosecond laser may have a center wavelength of 800nm, a repetition frequency of 1000Hz, and a pulse width of 100 fs.
Further, the power of the femtosecond laser can be above 100uW and below 200uW, for example, 100 uW; the irradiation time may be 1 minute or more and 5 minutes or less, for example, 2 minutes.
Specifically, the exposed channel of the graphene FET to be processed in a saturated ammonium chloride aqueous solution may be irradiated with femtosecond laser light emitted from the femtosecond laser 402.
Fig. 4 is a flowchart of a method for manufacturing a nitrogen-doped graphene field effect transistor according to yet another embodiment of the present invention, which is based on the embodiment shown in fig. 1.
In this embodiment, before S1, the method for manufacturing a nitrogen-doped graphene field effect transistor further includes:
and S01, forming graphene on the substrate.
It will be appreciated that a class of fabrication approaches to fabricating graphene field effect transistors to be processed in which an exposed channel is present may be provided herein.
Specifically, the graphene 201 may be formed on the substrate first, for example, the graphene 201 may be formed on the substrate by a mechanical lift-off method.
The graphene 201 serves as a conductive channel.
Reference may be made to the first schematic structure of the transistor fabrication shown in fig. 5 a.
And S02, forming a source electrode and a drain electrode on the graphene to obtain the graphene field effect transistor to be processed with the exposed channel.
Then, a source 301 and a drain 302 may be formed on the graphene 201, so as to obtain a graphene field effect transistor to be processed with an exposed channel.
Reference may be made to the second schematic diagram of the transistor fabrication shown in fig. 5 b.
The exposed channel refers to a remaining region on the surface of the graphene 201 except for a region occupied by the source 301 and the drain 302, and more specifically, the exposed channel refers to a spacing region between the source 301 and the drain 302 on the graphene 201.
The method for manufacturing the nitrogen-doped graphene field effect transistor provided by the embodiment of the invention provides a specific manufacturing mode of a to-be-processed graphene field effect transistor with an exposed channel.
Reference is also made, among other things, to a transistor fabrication framework of the type shown in fig. 3.
On the basis of the foregoing embodiment, preferably, before forming the graphene on the substrate, the method for manufacturing the nitrogen-doped graphene field effect transistor further includes:
a dielectric layer 101 is formed on the back gate 102 to obtain a substrate.
It will be appreciated that one type of substrate fabrication may be provided herein.
Specifically, the substrate may include a back gate 102, a dielectric layer 101.
See fig. 5c for a schematic view of the substrate structure.
More specifically, a heavily doped silicon layer may serve as the back gate 102 and a silicon dioxide layer may serve as the dielectric layer 101.
The thickness of the heavily doped silicon layer with good conductivity, i.e. the back gate 102, may be 300nm to 500nm, for example, 500 um; the thickness of the silicon dioxide layer may be 300nm or more and 500nm or less, for example, 300 nm.
As can be seen, the graphene field effect transistor to be processed provided by the embodiment of the present invention includes, from bottom to top, a heavily doped silicon layer, a silicon dioxide layer, graphene 201, and a source 301 and a drain 302.
On the basis of the above embodiment, preferably, before forming the graphene 201 on the substrate, the method for manufacturing the nitrogen-doped graphene field effect transistor further includes:
and carrying out ultrasonic treatment and etching treatment on the substrate.
Specifically, after the dielectric layer 101 is formed on the back gate 102 to obtain a substrate, ultrasonic processing and etching processing may be performed on the substrate, and then the graphene 201 is formed on the processed substrate.
For example, the substrate may be sequentially subjected to ultrasonic treatment in an isopropanol solution and an acetone solution for 5 to 10 minutes; then, the substrate was etched using an oxygen plasma etching system for 1 minute at an etching power of 20 w.
Further, the substrate may have a clean, hydrophilic surface.
In particular, the upper surface of the silicon dioxide layer has a clean, hydrophilic surface.
On the basis of the foregoing embodiment, preferably, the forming a source 301 and a drain 302 on the graphene 201 to obtain a graphene field effect transistor to be processed with an exposed channel specifically includes:
and forming a source electrode 301 and a drain electrode 302 on the graphene 201 by a standard electron beam exposure method or a magnetron sputtering method to obtain the graphene field effect transistor to be processed with an exposed channel.
On the basis of the above embodiment, the source electrode 301 and the drain electrode 302 are preferably molybdenum electrodes.
Further, the metal electrodes of the nitrogen-doped graphene field effect transistor comprise a source electrode 301 and a drain electrode 302.
In addition to the above embodiments, the thickness of the source electrode 301 and the drain electrode 302 is preferably 80nm to 120 nm.
For example, the thickness of the source 301 and the drain 302 may be 100 nm.
Further, in order to facilitate understanding of the quality of the nitrogen-doped graphene field effect transistor manufactured according to the embodiment of the present invention and the manufacturing performance of the manufacturing link, reference may be made to the raman spectrum of the exposed channel before and after nitrogen doping shown in fig. 6 a.
Wherein the horizontal axis of the Raman spectrum represents the wavenumber (cm)-1) The vertical axis represents the signal Intensity (a.u.).
As can be seen, the graphene has a G peak and a 2D peak before nitrogen doping, and shows typical Raman spectrum characteristics of defect-free graphene; after nitrogen doping, a D peak, i.e., a defect peak, appears. This indicates that, through laser irradiation, a defect and a dangling bond appear on the surface of the graphene 201, and the defect and the dangling bond are active sites for the graphene 201 to combine with a nitrogen-containing radical.
Further, reference may be made to the N-1s spectrum of the conduction channel before and after nitrogen doping as shown in FIG. 6 b.
FIG. 6b shows an X-ray photoelectron spectroscopy (XPS) N-1s spectrum of the graphene 201 channel before and after nitrogen doping for comparison.
Wherein the horizontal axis represents Binding Energy (eV), and the vertical axis represents signal Intensity (a.u.).
Specifically, from the N-1s spectrum, it can be seen that the graphene 201 conduction channel of the graphene FET, after nitrogen doping, shows a peak at 400eV, which is a carbon-nitrogen bond (C-NH 2); but not before nitrogen doping. This indicates that the nitrogen is not from the graphene FET itself, but in the ammonium chloride NH4The Cl solution is introduced by laser irradiation.
Fig. 6a and 6b show that the principle of nitrogen doping is that the femtosecond laser interacts with the graphene 201, that is, the surface of the graphene 201 induces defects and generates dangling bonds, and the defects and dangling bonds combine with nitrogen-containing radicals ionized by high-concentration ammonium ions near the surface of the graphene 201, so that nitrogen doping is realized.
Further, reference may be made to the transfer curve of the conductive channel before and after the nitrogen doping as shown in fig. 6 c.
Therein, fig. 6c records the transfer curves of graphene FETs before and after nitrogen doping for comparison.
The horizontal axis represents the gate voltage vbg (v), and the vertical axis represents the source-drain current id (ua).
Specifically, the solid dotted line is before nitrogen doping, and the hollow dotted line is after nitrogen doping. The result shows that the transfer curve of the graphene FET before and after nitrogen doping moves towards the negative gate voltage (namely-Vbg) direction; and in the range of 5V to 10V of gate voltage, the conductivity types of the graphene FETs before and after nitrogen doping are changed. This is because the doped nitrogen radical is an electron donor, which increases the electron concentration in the channel of the graphene FET, thereby changing the conductivity type to n-type.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions may be embodied in the form of a software product, which can be stored in a computer-readable storage medium such as ROM/RAM, magnetic disk, optical disk, etc., and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the methods described in the embodiments or some parts of the embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A method for manufacturing a nitrogen-doped graphene field effect transistor is characterized by comprising the following steps:
immersing the graphene field effect transistor to be processed with the exposed channel in a nitrogen-containing solution;
and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution by laser to obtain the nitrogen-doped graphene field effect transistor.
2. The method for manufacturing the nitrogen-doped graphene field effect transistor according to claim 1, wherein the step of immersing the graphene field effect transistor to be processed with the exposed channel in a nitrogen-containing solution specifically comprises the following steps:
immersing the graphene field effect transistor to be treated with the exposed channel in a container containing a nitrogen-containing solution;
correspondingly, the exposing channel of the graphene field effect transistor to be processed in the nitrogen-containing solution is irradiated by laser to obtain the nitrogen-doped graphene field effect transistor, and the method specifically comprises the following steps:
and moving the container through a moving platform, and irradiating the exposed channel of the graphene field effect transistor to be processed in the nitrogen-containing solution through laser to obtain the nitrogen-doped graphene field effect transistor.
3. The method according to claim 1, wherein the nitrogen-containing solution is a saturated aqueous ammonium chloride solution.
4. The method of manufacturing a nitrogen-doped graphene field effect transistor according to claim 1, wherein the laser is a femtosecond laser.
5. The method for manufacturing a nitrogen-doped graphene field effect transistor according to any one of claims 1 to 4, wherein before the step of immersing the graphene field effect transistor to be processed in which the exposed channel exists in the nitrogen-containing solution, the method for manufacturing a nitrogen-doped graphene field effect transistor further comprises:
forming graphene on a substrate;
and forming a source electrode and a drain electrode on the graphene to obtain the graphene field effect transistor to be processed with the exposed channel.
6. The method of manufacturing a nitrogen-doped graphene field effect transistor according to claim 5, wherein before the forming of the graphene on the substrate, the method of manufacturing a nitrogen-doped graphene field effect transistor further comprises:
and forming a dielectric layer on the back gate to obtain the substrate.
7. The method of manufacturing a nitrogen-doped graphene field effect transistor according to claim 5, wherein before the forming of the graphene on the substrate, the method of manufacturing a nitrogen-doped graphene field effect transistor further comprises:
and carrying out ultrasonic treatment and etching treatment on the substrate.
8. The method according to claim 5, wherein forming a source and a drain on the graphene to obtain the graphene field effect transistor to be processed with the exposed channel comprises:
and forming a source electrode and a drain electrode on the graphene by a standard electron beam exposure method or a magnetron sputtering method to obtain the graphene field effect transistor to be processed with the exposed channel.
9. The method according to claim 5, wherein the source and the drain are molybdenum electrodes.
10. The method of manufacturing a nitrogen-doped graphene field effect transistor according to claim 5, wherein the thickness of the source electrode and the drain electrode is 80nm to 120 nm.
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