CN113725067A - SAMO substrate single crystal substrate for epitaxial chip growth - Google Patents
SAMO substrate single crystal substrate for epitaxial chip growth Download PDFInfo
- Publication number
- CN113725067A CN113725067A CN202110783478.6A CN202110783478A CN113725067A CN 113725067 A CN113725067 A CN 113725067A CN 202110783478 A CN202110783478 A CN 202110783478A CN 113725067 A CN113725067 A CN 113725067A
- Authority
- CN
- China
- Prior art keywords
- substrate
- samo
- single crystal
- chip
- epitaxial chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 239000013078 crystal Substances 0.000 title claims abstract description 72
- 238000004963 SAMO calculation Methods 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 abstract description 9
- 239000010980 sapphire Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
Abstract
The invention relates to the technical field related to chip epitaxial growth, and discloses an SAMO substrate single crystal substrate for epitaxial chip growth, which comprises an SAMO substrate single crystal substrate and an epitaxial chip, wherein the SAMO substrate single crystal substrate is made of ScAl MgO4 material, the SAMO substrate single crystal substrate is circular or regular hexagon, and the surface of the SAMO substrate single crystal substrate is subjected to polishing treatment. This SAMO substrate single crystal baseplate for epitaxial chip grows, the lattice mismatch rate between the characteristic that SAMO substrate single crystal baseplate has and the epitaxial chip crystal is 1.8%, be far below with the silicon substrate, the sapphire substrate, the crystal dislocation between carborundum substrate or gallium arsenide substrate and the crystal, be convenient for epitaxial chip's peeling off, growth buffer layer in the traditional handicraft has been reduced, the aluminium nitrogen layer is the process of basic substrate, thereby the effectual machining efficiency who improves the product, and reduce the processing of middle buffer process, can effectually reduce the impurity layer that produces in the chip growth, and then effectively improve epitaxial chip's the working medium that adds.
Description
Technical Field
The invention relates to the technical field related to epitaxial growth of chips, in particular to an SAMO substrate single crystal substrate for epitaxial chip growth.
Background
GaN is a typical representative of third-generation wide bandgap semiconductors, has been widely used in semiconductor illumination, microwave power devices, power electronic devices, and the like, and shows great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material, and such homoepitaxy (i.e. the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film, reduce the dislocation density, prolong the service life of the device, improve the luminous efficiency and improve the working current density of the device. However, the gallium nitride single crystal growth is difficult and expensive, and large-scale homoepitaxial growth is not possible at present. Therefore, at present, heteroepitaxy is still adopted in the preparation of gallium nitride single crystals, such as silicon substrates, sapphire substrates, silicon carbide substrates and the like.
Currently, substantially all commercial GaN substrates (wafers, substrates) are fabricated by HVPE. But their size is still typically limited to 2 inches, with larger sizes such as 4 inches being limited by the radius of curvature. In HVPE, however, due to heteroepitaxy, the stress caused by the lattice constant and the thermal expansion coefficient causes gallium nitride to crack when grown thick or when cooled.
The existing solution is to grow several microns of GaN thin film on the sapphire surface by using MOCVD and carry out interface treatment to form various masks, on one hand, the initial defect during growth is reduced and a stress yielding type substrate is formed, so that the critical thickness of GaN growth is as large as possible, such as several hundred microns or even several millimeters; another aspect is to create a weak interface that can cause self-peeling of GaN and sapphire or other substrates due to shear stress induced by the difference in the number of thermal expansions at the cool down. The essence of the method is that the transition layer is inserted into the interface of the foreign substrate, so as to achieve the purpose of reducing dislocation and stress during growth, and the grown gallium nitride is easy to be stripped from the substrate such as sapphire during cooling.
However, since the sapphire-based HVPE employs a heterogeneous material with a lattice mismatch constant of-13.9%, the dislocation ratio of the grown gallium nitride crystal is high, the expansion to 4 inches is limited by a stress curvature radius of 10 m or less, the yield is low due to complex stripping and dislocation reduction processes, and finally the production cost is too high due to the single wafer method, so the inventor designs an SAMO substrate single crystal substrate for epitaxial chip growth, and solves the above technical problems.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides the SAMO substrate single crystal substrate for epitaxial chip growth, which solves the problem that the production efficiency is reduced due to high crystal dislocation and complex process of HVPE based on sapphire.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: the SAMO substrate single crystal baseplate for the growth of the epitaxial chip comprises a SAMO substrate single crystal baseplate and an epitaxial chip, wherein the SAMO substrate single crystal baseplate is made of ScAlMgO material, and the epitaxial chip is deposited and grown on the surface of the SAMO substrate single crystal baseplate.
Preferably, the SAMO substrate single crystal substrate is circular or regular hexagonal.
Preferably, the surface of the SAMO substrate single crystal substrate is polished, the SAMO substrate single crystal substrate has an atomic layer surface, the surface roughness is not more than 0.5nm, and the c-plane OFFCUT is 0-1.5 degrees.
Preferably, the SAMO-based single crystal substrate belongs to a hexagonal system, has a lattice constant of 0.3246nm and a lattice constant of 2.5195nm, and has a rhombohedral layered structure.
Preferably, the lattice mismatch ratio between the SAMO substrate single crystal substrate and the GaN crystal is 1.8%.
Preferably, the epitaxial chip is obtained by processing a SAMO substrate single crystal substrate, and the epitaxial chip is one of a power chip, a radio frequency chip, an LED high brightness chip, or a laser epitaxial chip.
(III) advantageous effects
The invention provides a SAMO substrate single crystal substrate for epitaxial chip growth. The method has the following beneficial effects:
this SAMO substrate single crystal substrate for epitaxial chip grows, SAMO substrate single crystal substrate adopts ScAlMgO4 material to make, the lattice mismatch rate between the characteristic that its own material has and the epitaxial chip crystal is 1.8%, be far below with the silicon substrate, sapphire substrate, the crystal dislocation between carborundum substrate or gallium arsenide substrate and the crystal, be convenient for epitaxial chip's peeling off, the process of growing the buffer layer in the traditional handicraft, the aluminium nitrogen layer is the base substrate has been reduced, thereby the machining efficiency of effectual improvement product, and reduce the processing of intermediate buffer process, the impurity layer that produces in can effectual reduction chip growth, and then effectively improve epitaxial chip's processingquality.
Drawings
FIG. 1 is a schematic view of a structural layer of the present invention.
In the figure: 1SAMO substrate single crystal substrate, 2 epitaxial chips.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the present invention provides a technical solution: an SAMO substrate single crystal substrate for epitaxial chip growth comprises an SAMO substrate single crystal substrate 1 and an epitaxial chip 2, wherein the SAMO substrate single crystal substrate 1 is made of ScAlMgO4 material, the SAMO substrate single crystal substrate 1 is circular or regular hexagonal, the surface of the SAMO substrate single crystal substrate 1 is polished, the SAMO substrate single crystal substrate 1 has an atomic layer surface, the surface roughness is not more than 0.5nm, c-plane FCUT is 0-1.5 degrees, the SAMO substrate single crystal substrate 1 belongs to a hexagonal system, the lattice constant a is 0.3246nm, c is 2.5195nm, the SAMO substrate single crystal substrate 1 has a rhombohedral layered structure, the lattice mismatch ratio between the SAMO substrate single crystal substrate 1 and a GaN crystal is 1.8%, the epitaxial chip 2 is obtained by processing the SAMO substrate single crystal substrate 1, the epitaxial chip 2 is one of a power chip, a radio frequency chip, an LED high brightness chip or a laser epitaxial chip, the epitaxial chip 2 is deposited and grown on the surface of the SAMO substrate single crystal substrate 1, the epitaxial chip 2 is obtained by processing the SAMO substrate single crystal substrate 1, and the epitaxial chip 2 is one of a power chip, a radio frequency chip, an LED high-brightness chip or a laser epitaxial chip.
In conclusion, the SAMO substrate single crystal substrate adopts ScAlMgO4, the lattice mismatch rate between the material and the crystal of the epitaxial chip is 1.8%, which is far lower than the crystal dislocation between the crystal and the silicon substrate, the sapphire substrate, the silicon carbide substrate or the gallium arsenide substrate, so that the epitaxial chip is conveniently stripped, the processes of growing the buffer layer and the aluminum nitrogen layer as the base substrate in the traditional process are reduced, the processing efficiency of the product is effectively improved, the processing of the intermediate buffer process is reduced, the impurity layer generated in the growth of the chip can be effectively reduced, and the processing quality of the epitaxial chip is effectively improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a reference structure" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A SAMO substrate single crystal substrate for epitaxial chip growth, comprising a SAMO substrate single crystal substrate and an epitaxial chip, characterized in that: the SAMO substrate single crystal substrate is made of ScAlMgO materials, and the epitaxial chip is deposited and grown on the surface of the SAMO substrate single crystal substrate.
2. A SAMO substrate single crystal substrate for epitaxial chip growth, according to claim 1, characterized in that: the SAMO substrate single crystal substrate is circular or regular hexagonal.
3. A SAMO substrate single crystal substrate for epitaxial chip growth, according to claim 1, characterized in that: the surface of the SAMO substrate single crystal substrate is polished, the SAMO substrate single crystal substrate is provided with an atomic layer surface, the surface roughness is not more than 0.5nm, and the c-plane OFFCUT is 0-1.5 degrees.
4. A SAMO substrate single crystal substrate for epitaxial chip growth, according to claim 1, characterized in that: the SAMO substrate single crystal substrate belongs to a hexagonal system, has a lattice constant a of 0.3246nm and a lattice constant c of 2.5195nm, and has a rhombohedral layered structure.
5. A SAMO substrate single crystal substrate for epitaxial chip growth, according to claim 1, characterized in that: the lattice mismatch ratio between the SAMO substrate single-crystal substrate and the GaN crystal is 1.8%.
6. A SAMO substrate single crystal substrate for epitaxial chip growth, according to claim 1, characterized in that: the epitaxial chip is obtained by processing the SAMO substrate single crystal substrate, and is one of a power chip, a radio frequency chip, an LED high-brightness chip or a laser epitaxial chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110783478.6A CN113725067A (en) | 2021-07-12 | 2021-07-12 | SAMO substrate single crystal substrate for epitaxial chip growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110783478.6A CN113725067A (en) | 2021-07-12 | 2021-07-12 | SAMO substrate single crystal substrate for epitaxial chip growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113725067A true CN113725067A (en) | 2021-11-30 |
Family
ID=78673317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110783478.6A Pending CN113725067A (en) | 2021-07-12 | 2021-07-12 | SAMO substrate single crystal substrate for epitaxial chip growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113725067A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030017626A1 (en) * | 2001-07-23 | 2003-01-23 | Motorola Inc. | Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices |
| JP2003073195A (en) * | 2001-08-30 | 2003-03-12 | Shin Etsu Handotai Co Ltd | Method for producing gallium nitride crystal and gallium nitride crystal |
| JP2015178448A (en) * | 2014-02-28 | 2015-10-08 | 国立大学法人東北大学 | Method for manufacturing single crystal substrate and method for manufacturing laser device |
| CN106158592A (en) * | 2016-08-29 | 2016-11-23 | 华南理工大学 | GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application |
| CN111607824A (en) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | Based on ScAlMgO4Gallium nitride single crystal of substrate and method for producing same |
-
2021
- 2021-07-12 CN CN202110783478.6A patent/CN113725067A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030017626A1 (en) * | 2001-07-23 | 2003-01-23 | Motorola Inc. | Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices |
| JP2003073195A (en) * | 2001-08-30 | 2003-03-12 | Shin Etsu Handotai Co Ltd | Method for producing gallium nitride crystal and gallium nitride crystal |
| JP2015178448A (en) * | 2014-02-28 | 2015-10-08 | 国立大学法人東北大学 | Method for manufacturing single crystal substrate and method for manufacturing laser device |
| CN106158592A (en) * | 2016-08-29 | 2016-11-23 | 华南理工大学 | GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application |
| CN111607824A (en) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | Based on ScAlMgO4Gallium nitride single crystal of substrate and method for producing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220372652A1 (en) | Gallium nitride single crystal based on a scalmgo4 substrate and preparation method thereof | |
| JP5125098B2 (en) | Manufacturing method of nitride semiconductor free-standing substrate | |
| US20070096117A1 (en) | Nitride Semiconductor Wafer | |
| US9822465B2 (en) | Method of fabricating group III nitride with gradually degraded crystal structure | |
| US20080217745A1 (en) | Nitride Semiconductor Wafer | |
| JP2007519591A5 (en) | ||
| CN109585269A (en) | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone | |
| JP6526811B2 (en) | Method of processing a group III nitride crystal | |
| CN111593408B (en) | Oversized self-supporting gallium nitride single crystal and preparation method thereof | |
| CN111501102A (en) | HVPE-based self-supporting gallium nitride single crystal and preparation method thereof | |
| US7468103B2 (en) | Method of manufacturing gallium nitride-based single crystal substrate | |
| RU2162902C1 (en) | MONOCRYSTALLINE SILICON CARBIDE SiC AND METHOD OF ITS PRODUCTION (VERSIONS) | |
| CN113725067A (en) | SAMO substrate single crystal substrate for epitaxial chip growth | |
| US20160076169A1 (en) | Substrates for growing group iii nitride crystals and their fabrication method | |
| CN112779603A (en) | High-quality low-defect silicon carbide single crystal, and preparation method and application thereof | |
| EP3191626A1 (en) | Substrates for growing group iii nitride crystals and their fabrication method | |
| KR100890085B1 (en) | Method for manufacturing substrate of Nitride chemical semiconductor | |
| CN111607825A (en) | Substrate, self-supporting GaN single crystal based on substrate and preparation method of self-supporting GaN single crystal | |
| CN116752233A (en) | Method for growing monocrystalline diamond based on heteroepitaxy | |
| CN113035689A (en) | Method for manufacturing gallium nitride single crystal substrate | |
| CN117867646A (en) | Large-size bulk aluminum nitride single crystal growth method | |
| CN113161226A (en) | Method for manufacturing gallium nitride single crystal substrate based on plasma CVD | |
| JP3531205B2 (en) | Substrate for epitaxial growth and epitaxial wafer | |
| CN113046712A (en) | Method for manufacturing gallium nitride single crystal substrate based on magnetron sputtering aluminum nitride | |
| JP2000247790A (en) | Substrate for semiconductor element, semiconductor element and production of nitrogen compound single crystal substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |