CN113703224A - Four-wafer Mini LED backlight module - Google Patents
Four-wafer Mini LED backlight module Download PDFInfo
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- CN113703224A CN113703224A CN202110986131.1A CN202110986131A CN113703224A CN 113703224 A CN113703224 A CN 113703224A CN 202110986131 A CN202110986131 A CN 202110986131A CN 113703224 A CN113703224 A CN 113703224A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
- G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133611—Direct backlight including means for improving the brightness uniformity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Planar Illumination Modules (AREA)
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Abstract
The invention discloses a four-wafer MiniLED backlight module, which comprises a back plate, a PCB (printed Circuit Board), MiniLED lamp beads, a backlight driver, fixing screws, supporting columns, reflecting paper, a diffusion sheet, a diffusion plate, a prism sheet and a liquid crystal screen, wherein the back plate is provided with a plurality of LED light sources; the upper surface of the PCB is provided with MiniLED lamp beads, four wafers are welded on the upper surface of the PCB, and the four wafers are independently controlled by backlight drive; four wafers in the MiniLED lamp bead respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6; the width of the wafer in the MiniLED lamp bead is less than 200 mu m; the distance between the light mixing distance OD of the backlight module and the MiniLED lamp beads is 1:2 at most. The invention has the characteristics of improving the brightness, improving the energy utilization rate, reducing the cost, uniformly mixing light and improving the light-emitting uniformity of the backlight module.
Description
Technical Field
The invention relates to a four-wafer Mini LED backlight module, in particular to a four-wafer Mini LED backlight module which has the advantages of improving the brightness, improving the energy utilization rate, reducing the cost, uniformly mixing light and improving the light-emitting uniformity of the backlight module.
Background
With the requirements of ultra-light and thin television and high definition image quality, the Mini LED technology is gradually used in high-end backlight products, and the Mini LED backlight technology adopting zone control can realize the functional advantages of high dynamic contrast, energy conservation, high color gamut, ultra-light and thin and the like.
The Mini LED backlight technology can easily realize HDR image quality, the peak brightness easily reaches more than 1000nit, the Mini LED requires that the width size of a wafer is less than 200um, so the driving current is relatively small, the number of LEDs used in the backlight is multiplied compared with the conventional backlight in the same size, the ultra-thin backlight design can be easily realized by the advantages brought by the Mini LED backlight, and the thickness of the module can be easily realized by 5-10 mm from the conventional 35 mm;
in order to realize high image quality, high color gamut and improved color difference reduction degree of the conventional Mini LED backlight, a backlight source is generally realized by a blue light chip and a quantum dot film.
The existing Mini LED backlight technology is based on blue light, white light conversion is realized by matching a quantum dot film, and as the quantum dot film is expensive and has cadmium pollution, the phenomenon that blue light leakage cannot be converted by 100% easily occurs in the light mixing process of a blue light chip and the quantum dot film; because the design is realized by exciting the quantum dot film by blue light, the photoelectric conversion efficiency is low and the energy consumption is high. In order to avoid the problems, the invention adopts the RGB three primary colors Mini LED wafer to directly provide the backlight source without using the quantum dot film, thereby greatly improving the luminous flux, and simultaneously, the color gamut and the color difference reduction degree have more advantages compared with the quantum dot film product; and the cost is reduced compared with the quantum dot film.
Disclosure of Invention
The invention aims to provide a four-wafer Mini LED backlight module which has the advantages of improving the brightness, improving the energy utilization rate, reducing the cost, uniformly mixing light and improving the light-emitting uniformity of the backlight module.
The purpose of the invention can be realized by the following technical scheme:
a four-wafer Mini LED backlight module comprises a back plate, a PCB (printed Circuit Board), Mini LED lamp beads, a backlight driver, fixing screws, supporting columns, reflecting paper, a diffusion sheet, a diffusion plate, a prism sheet and a liquid crystal screen;
the upper surface of the PCB is provided with Mini LED lamp beads, four wafers are welded on the upper surface of the PCB, and the four wafers are independently controlled by backlight drive;
four wafers in the Mini LED lamp bead respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6;
the width of the wafer in the Mini LED lamp bead is less than 200 mu m;
the maximum distance between the light mixing distance OD of the backlight module and the Mini LED lamp beads is 1: 2;
the four wafers in the Mini LED lamp beads comprise a first Mini LED wafer, a second Mini LED wafer, a third Mini LED wafer and a fourth Mini LED wafer, and the first Mini LED wafer, the second Mini LED wafer, the third Mini LED wafer and the fourth Mini LED wafer are arranged in a 2 x 2 mode; the first Mini LED chip, the second Mini LED chip, the third Mini LED chip and the fourth Mini LED chip are red light chips, green light chips, blue light chips and chip size package CSPs; the chip scale package CSP is formed by covering a blue light flip chip with fluorescent powder and packaging glue;
the outer sides of the four wafers of the Mini LED lamp beads are provided with reflecting walls which are arc-shaped bumps, and the inner side surfaces of the reflecting walls are inclined outwards; the four reflecting walls are distributed along the center of the Mini LED lamp bead according to a circular matrix;
the PCB is provided with a fixing screw hole, and the fixing screw is used for fixedly mounting the PCB on the back plate through the fixing screw hole; the upper surface of the PCB is fixedly provided with a support column, and the surface of the PCB is covered with reflection paper; a diffusion sheet, a diffusion plate, a prism sheet and a liquid crystal screen are sequentially arranged above the PCB, and the diffusion sheet is supported by the support columns;
the back side of the PCB is provided with a backlight driver;
a silica gel lens is arranged on the Mini LED lamp bead, and the silica gel lens covers and wraps the four wafers;
the silica gel lens is prepared by solidifying thermosetting silica gel, and diffusion powder is contained in the silica gel lens; the diffusion powder is made of TiO2Powder composition;
the surface of each of the four wafers of the Mini LED lamp bead is of a fan-shaped structure, the four wafers of the Mini LED lamp bead are respectively a first fan-shaped Mini LED wafer, a second fan-shaped Mini LED wafer, a third fan-shaped Mini LED wafer and a fourth fan-shaped Mini LED wafer, and the first fan-shaped Mini LED wafer, the second fan-shaped Mini LED wafer, the third fan-shaped Mini LED wafer and the fourth fan-shaped Mini LED wafer are combined to form a circle.
The invention provides a four-wafer Mini LED backlight module which has the characteristics of improving the brightness, improving the energy utilization rate, reducing the cost, uniformly mixing light and improving the light-emitting uniformity of the backlight module. The invention has the beneficial effects that: red light, green light and blue light emitted by the red light wafer, the green light wafer and the blue light wafer are used as three primary colors and are mixed to form white light, and the other wafer emits white light to increase the brightness of the Mini LED lamp beads, so that the brightness of the backlight module is improved; the mode that the blue Mini LED wafer is matched with the quantum dot film is replaced by the mode that the four wafers emit red light, green light, blue light and white light, the quantum dot film is high in cost and has cadmium pollution, blue light leakage easily occurs in the process that the blue Mini LED wafer and the quantum dot film are mixed, and the blue light cannot be converted by 100 percent, and the design is realized by exciting the quantum dots in the quantum dot film by the blue light, so that the photoelectric conversion efficiency is low, and the energy consumption is high; the backlight module adopts RGB three-primary-color chips, directly provides a backlight source, and does not use a quantum dot film, so that the luminous flux can be greatly improved, and simultaneously, the color gamut and the color difference reduction degree have more advantages compared with quantum dot film products; meanwhile, compared with a quantum dot film, the cost is also reduced;
four wafers in the Mini LED lamp beads are inverted Mini LED wafers, the general light emitting surface of each inverted Mini LED wafer is the bottom side, light from the light emitting surface of each inverted Mini LED wafer towards two sides is not easy to utilize, and light transmitted by the upper surface of the PCB is refracted to a diffusion sheet by arranging the inner side surfaces of the four wafers, which are inclined outwards, of the reflection walls on the outer sides of the four wafers, so that the brightness of the backlight module is improved; in addition, the four wafers 2 x 2 are arranged, and the light emitting intensity of the wafer in the light emitting direction at the outer side of each wafer is reduced through the reflecting wall formed by the four arc-shaped convex blocks, so that the red, green, blue and white mixed light effects respectively emitted by the four wafers in the Mini LED lamp beads are avoided, and the light emitting uniformity of the backlight module is improved;
the backlight driver is welded on the back of the PCB, so that the thickness of the backlight module is reduced;
the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer in the Mini LED lamp bead are respectively red light wafers, green light wafers and blue light wafers, and the outer sides of the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer are not protected by organic silica gel, so that the service life is easily corroded by air and water vapor, and the service life is influenced; the silica gel lens wraps the first Mini LED chip, the second Mini LED chip, the third Mini LED chip and the fourth Mini LED chip, and the four chips are protected from air and water vapor;
the silica gel lens contains diffusion powder, and the silica gel lens promotes the light-emitting uniformity after mixing the red light, green light, blue light, the white light diffusion that four wafers sent.
Drawings
In order to facilitate understanding for those skilled in the art, the present invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of a four-chip Mini LED backlight module according to the present invention;
FIG. 2 is an enlarged view of FIG. 1 at A;
FIG. 3 is a schematic diagram of a die bonding PCB structure of a four-chip Mini LED backlight module according to the present invention;
FIG. 4 is an enlarged view of FIG. 3 at B;
FIG. 5 is a schematic diagram of a PCB structure of a four-chip Mini LED backlight module according to the present invention;
FIG. 6 is an enlarged view at C of FIG. 5;
fig. 7 is a schematic structural diagram of a die bond PCB structure of embodiment 1;
fig. 8 is an enlarged view of fig. 7 at D.
In the figure: 1. a back plate; 2. a PCB board; 21. fixing screw holes; 3. a Mini LED lamp bead; 31. a first Mini LED chip; 32. a second Mini LED chip; 33. a third Mini LED chip; 34. a fourth Mini LED chip; 35. a silicone lens; 36. a reflective wall; 37. a first fan-shaped Mini LED wafer; 38. a second fan-shaped Mini LED wafer; 39. a third fan-shaped Mini LED chip; 310. a fourth fan-shaped Mini LED wafer; 4. driving the backlight; 5. fixing screws; 6. a support pillar; 7. a reflective paper; 8. a diffusion sheet; 9. a diffusion plate; 10. a prism sheet; 11. a liquid crystal panel.
Detailed Description
The purpose of the invention can be realized by the following technical scheme:
a four-wafer Mini LED backlight module is shown in figures 1-6 and comprises a back plate 1, a PCB 2, Mini LED lamp beads 3, a backlight driver 4, fixing screws 5, support columns 6, reflecting paper 7, a diffusion sheet 8, a diffusion plate 9, a prism sheet 10 and a liquid crystal screen 11;
the upper surface of the PCB 2 is provided with Mini LED lamp beads 3, the Mini LED lamp beads 3 are formed by welding four wafers on the upper surface of the PCB 2, and the four wafers are independently controlled by a backlight driver 4;
four wafers in the Mini LED lamp bead 3 respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6; red light, green light and blue light emitted by the red light wafer, the green light wafer and the blue light wafer are used as three primary colors and are mixed to form white light, and the other wafer emits white light to increase the brightness of the Mini LED lamp beads 3, so that the brightness of the backlight module is improved; the mode that the blue Mini LED wafer is matched with the quantum dot film is replaced by the mode that the four wafers emit red light, green light, blue light and white light, the quantum dot film is high in cost and has cadmium pollution, blue light leakage easily occurs in the process that the blue Mini LED wafer and the quantum dot film are mixed, and the blue light cannot be converted by 100 percent, and the design is realized by exciting the quantum dots in the quantum dot film by the blue light, so that the photoelectric conversion efficiency is low, and the energy consumption is high; the backlight module adopts RGB three-primary-color chips, directly provides a backlight source, and does not use a quantum dot film, so that the luminous flux can be greatly improved, and simultaneously, the color gamut and the color difference reduction degree have more advantages compared with quantum dot film products; meanwhile, compared with a quantum dot film, the cost is also reduced;
the width of the wafer in the Mini LED lamp bead 3 is less than 200 mu m;
the distance between the light mixing distance OD of the backlight module and the Mini LED lamp beads 3 is 1:2 at most;
the four chips in the Mini LED bead 3 include a first Mini LED chip 31, a second Mini LED chip 32, a third Mini LED chip 33 and a fourth Mini LED chip 34, and the first Mini LED chip 31, the second Mini LED chip 32, the third Mini LED chip 33 and the fourth Mini LED chip 34 are arranged in a 2 x 2 arrangement manner; the first Mini LED chip 31, the second Mini LED chip 32, the third Mini LED chip 33 and the fourth Mini LED chip 34 are red chips, green chips, blue chips and chip size package CSPs; the chip scale package CSP is that a blue light flip chip is covered with fluorescent powder and packaging glue, and the blue light flip chip emits blue light which irradiates the fluorescent powder to emit white light;
the outer sides of the four wafers of the Mini LED lamp beads 3 are provided with reflecting walls 36, the reflecting walls 36 are arc-shaped bumps, and the inner side surfaces of the reflecting walls 36 are inclined outwards; the four reflecting walls 36 are distributed along the center of the Mini LED lamp bead 3 according to a circular matrix; four wafers in the Mini LED lamp bead 3 are inverted Mini LED wafers, the general light emitting surface of the inverted Mini LED wafers is the bottom side, light from the light emitting surface of the inverted Mini LED wafers towards two side directions is not easy to be utilized, and the light transmitted by the upper surface of the PCB board 2 is refracted to the diffusion sheet 8 by the inner side surfaces of the four wafers, which are arranged on the outer sides of the four wafers and are inclined outwards, so that the brightness of the backlight module is improved; in addition, the four wafers 2 × 2 are arranged, and the light emitting intensity of the wafer in the light emitting direction at the outer side of each wafer is reduced through the reflecting wall 36 formed by the four arc-shaped bumps, so that the red, green, blue and white mixed light effects respectively emitted by the four wafers in the Mini LED lamp beads 3 are avoided, and the light emitting uniformity of the backlight module is improved;
the PCB 2 is provided with a fixing screw hole 21, and the fixing screw 5 fixedly installs the PCB 2 on the back plate 1 through the fixing screw hole 21; the upper surface of the PCB 2 is fixedly provided with a support column 6, and the surface of the PCB 2 is covered with a piece of reflection paper 7; a diffusion sheet 8, a diffusion plate 9, a prism sheet 10 and a liquid crystal screen 11 are sequentially arranged above the PCB 2, and the diffusion sheet 8 is supported by the support columns 6;
the back side of the PCB 2 is provided with a backlight driver 4, the backlight driver 4 is welded on the back side of the PCB 2, and the thickness of the backlight module is reduced;
a silica gel lens 35 is arranged on the Mini LED lamp bead 3, and the silica gel lens 35 covers and wraps four wafers; the first Mini LED wafer 31, the second Mini LED wafer 32 and the third Mini LED wafer 33 in the Mini LED lamp bead 3 are red light wafers, green light wafers and blue light wafers respectively, and the outer sides of the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer are not protected by organic silicon gel, so that the service life is easily corroded by air and water vapor, and the service life is influenced; the silica gel lens 35 wraps the first Mini LED chip 31, the second Mini LED chip 32, the third Mini LED chip 33 and the fourth Mini LED chip 34, and protects the four chips from air and water vapor;
the silica gel lens 35 is made by solidifying thermosetting silica gel, and the silica gel lens 35 contains diffusion powder; the diffusion powder is made of TiO2Powder composition of TiO2The powder diffuses and mixes red light, green light, blue light and white light emitted by the four wafers, so that the light emitting uniformity is improved;
example 1
As shown in fig. 7 to 8, a four-chip Mini LED backlight module includes a back plate 1, a PCB 2, Mini LED beads 3, a backlight driver 4, fixing screws 5, support columns 6, reflective paper 7, a diffusion sheet 8, a diffusion plate 9, a prism sheet 10, and a liquid crystal screen 11;
the PCB 2 is provided with a fixing screw hole 21, and the fixing screw 5 fixedly installs the PCB 2 on the back plate 1 through the fixing screw hole 21; the upper surface of the PCB 2 is fixedly provided with a support column 6, and the surface of the PCB 2 is covered with a piece of reflection paper 7; a diffusion sheet 8, a diffusion plate 9, a prism sheet 10 and a liquid crystal screen 11 are sequentially arranged above the PCB 2, and the diffusion sheet 8 is supported by the support columns 6;
the upper surface of the PCB 2 is provided with Mini LED lamp beads 3, the Mini LED lamp beads 3 are formed by welding four wafers on the upper surface of the PCB 2, and the four wafers are independently controlled by a backlight driver 4;
four wafers in the Mini LED lamp bead 3 respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6;
the width of the wafer in the Mini LED lamp bead 3 is less than 200 mu m;
the distance between the light mixing distance OD of the backlight module and the Mini LED lamp beads 3 is 1:2 at most;
the outer sides of the four wafers of the Mini LED lamp beads 3 are provided with reflecting walls 36, the reflecting walls 36 are arc-shaped bumps, and the inner side surfaces of the reflecting walls 36 are inclined outwards; the four reflecting walls 36 are distributed along the center of the Mini LED lamp bead 3 according to a circular matrix;
a backlight driver 4 is arranged on the back side of the PCB 2;
a silica gel lens 35 is arranged on the Mini LED lamp bead 3, and the silica gel lens 35 covers and wraps four wafers;
the silica gel lens 35 is made by solidifying thermosetting silica gel, and the silica gel lens 35 contains diffusion powder; the diffusion powder is made of TiO2Powder composition;
the surfaces of four wafers of the Mini LED lamp beads 3 are all fan-shaped structures, the four wafers of the Mini LED lamp beads 3 are respectively a first fan-shaped Mini LED wafer 37, a second fan-shaped Mini LED wafer 38, a third fan-shaped Mini LED wafer 39 and a fourth fan-shaped Mini LED wafer 310, and the first fan-shaped Mini LED wafer 37, the second fan-shaped Mini LED wafer 38, the third fan-shaped Mini LED wafer 39 and the fourth fan-shaped Mini LED wafer 310 are combined to form a circle; the first fan-shaped Mini LED chip 37, the second fan-shaped Mini LED chip 38, the third fan-shaped Mini LED chip 39 and the fourth fan-shaped Mini LED chip 310 are respectively a red light chip, a green light chip, a blue light chip and a chip size package CSP; four reflecting walls 36 are respectively arranged on the upper surface of the PCB 2 at the outer sides of the first fan-shaped Mini LED wafer 37, the second fan-shaped Mini LED wafer 38, the third fan-shaped Mini LED wafer 39 and the fourth fan-shaped Mini LED wafer 310; the four fan-shaped wafers are welded on the bonding pads on the upper surface of the PCB board 2, the photosynthetic uniformity emitted by the four fan-shaped wafers is enhanced, and the four fan-shaped wafers are matched with the reflecting walls 36 arranged on the upper surface of the PCB board 2 at the outer sides of the four wafers; the mixed light irradiates a diffusion sheet 8 above the Mini LED lamp beads 3;
the working principle of the invention is as follows:
according to the invention, the Mini LED lamp beads 3 are arranged on the upper surface of the PCB 2, the Mini LED lamp beads 3 are formed by welding four wafers on the upper surface of the PCB 2, and the four wafers are independently controlled by the backlight driver 4; four wafers in the Mini LED lamp bead 3 respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6; red light, green light and blue light emitted by the red light wafer, the green light wafer and the blue light wafer are used as three primary colors and are mixed to form white light, and the other wafer emits white light to increase the brightness of the Mini LED lamp beads 3, so that the brightness of the backlight module is improved; the mode that the blue Mini LED wafer is matched with the quantum dot film is replaced by the mode that the four wafers emit red light, green light, blue light and white light, the quantum dot film is high in cost and has cadmium pollution, blue light leakage easily occurs in the process that the blue Mini LED wafer and the quantum dot film are mixed, and the blue light cannot be converted by 100 percent, and the design is realized by exciting the quantum dots in the quantum dot film by the blue light, so that the photoelectric conversion efficiency is low, and the energy consumption is high; the backlight module adopts RGB three-primary-color chips, directly provides a backlight source, and does not use a quantum dot film, so that the luminous flux can be greatly improved, and simultaneously, the color gamut and the color difference reduction degree have more advantages compared with quantum dot film products; meanwhile, compared with a quantum dot film, the cost is also reduced;
four wafers in the Mini LED lamp bead 3 are inverted Mini LED wafers, the general light emitting surface of the inverted Mini LED wafers is the bottom side, light from the light emitting surface of the inverted Mini LED wafers towards two side directions is not easy to be utilized, and the light transmitted by the upper surface of the PCB board 2 is refracted to the diffusion sheet 8 by the inner side surfaces of the four wafers, which are arranged on the outer sides of the four wafers and are inclined outwards, so that the brightness of the backlight module is improved; in addition, the four wafers 2 × 2 are arranged, and the light emitting intensity of the wafer in the light emitting direction at the outer side of each wafer is reduced through the reflecting wall 36 formed by the four arc-shaped bumps, so that the red, green, blue and white mixed light effects respectively emitted by the four wafers in the Mini LED lamp beads 3 are avoided, and the light emitting uniformity of the backlight module is improved;
the backlight driver 4 is welded on the back of the PCB 2, so that the thickness of the backlight module is reduced;
the first Mini LED wafer 31, the second Mini LED wafer 32 and the third Mini LED wafer 33 in the Mini LED lamp bead 3 are red light wafers, green light wafers and blue light wafers respectively, and the outer sides of the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer are not protected by organic silicon gel, so that the service life is easily corroded by air and water vapor, and the service life is influenced; the silica gel lens 35 wraps the first Mini LED chip 31, the second Mini LED chip 32, the third Mini LED chip 33 and the fourth Mini LED chip 34, and protects the four chips from air and water vapor;
the silica gel lens 35 contains diffusion powder, and the silica gel lens 35 diffuses and mixes red light, green light, blue light and white light emitted by the four wafers, so that the light emitting uniformity is improved.
The invention provides a four-wafer Mini LED backlight module which has the characteristics of improving the brightness, improving the energy utilization rate, reducing the cost, uniformly mixing light and improving the light-emitting uniformity of the backlight module. The invention has the beneficial effects that: red light, green light and blue light emitted by the red light wafer, the green light wafer and the blue light wafer are used as three primary colors and are mixed to form white light, and the other wafer emits white light to increase the brightness of the Mini LED lamp beads, so that the brightness of the backlight module is improved; the mode that the blue Mini LED wafer is matched with the quantum dot film is replaced by the mode that the four wafers emit red light, green light, blue light and white light, the quantum dot film is high in cost and has cadmium pollution, blue light leakage easily occurs in the process that the blue Mini LED wafer and the quantum dot film are mixed, and the blue light cannot be converted by 100 percent, and the design is realized by exciting the quantum dots in the quantum dot film by the blue light, so that the photoelectric conversion efficiency is low, and the energy consumption is high; the backlight module adopts RGB three-primary-color chips, directly provides a backlight source, and does not use a quantum dot film, so that the luminous flux can be greatly improved, and simultaneously, the color gamut and the color difference reduction degree have more advantages compared with quantum dot film products; meanwhile, compared with a quantum dot film, the cost is also reduced;
four wafers in the Mini LED lamp beads are inverted Mini LED wafers, the general light emitting surface of each inverted Mini LED wafer is the bottom side, light from the light emitting surface of each inverted Mini LED wafer towards two sides is not easy to utilize, and light transmitted by the upper surface of the PCB is refracted to a diffusion sheet by arranging the inner side surfaces of the four wafers, which are inclined outwards, of the reflection walls on the outer sides of the four wafers, so that the brightness of the backlight module is improved; in addition, the four wafers 2 x 2 are arranged, and the light emitting intensity of the wafer in the light emitting direction at the outer side of each wafer is reduced through the reflecting wall formed by the four arc-shaped convex blocks, so that the red, green, blue and white mixed light effects respectively emitted by the four wafers in the Mini LED lamp beads are avoided, and the light emitting uniformity of the backlight module is improved;
the backlight driver is welded on the back of the PCB, so that the thickness of the backlight module is reduced;
the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer in the Mini LED lamp bead are respectively red light wafers, green light wafers and blue light wafers, and the outer sides of the first Mini LED wafer, the second Mini LED wafer and the third Mini LED wafer are not protected by organic silica gel, so that the service life is easily corroded by air and water vapor, and the service life is influenced; the silica gel lens wraps the first Mini LED chip, the second Mini LED chip, the third Mini LED chip and the fourth Mini LED chip, and the four chips are protected from air and water vapor;
the silica gel lens contains diffusion powder, and the silica gel lens promotes the light-emitting uniformity after mixing the red light, green light, blue light, the white light diffusion that four wafers sent.
The foregoing is merely exemplary and illustrative of the present invention and various modifications, additions and substitutions may be made by those skilled in the art to the specific embodiments described without departing from the scope of the invention as defined in the following claims.
Claims (10)
1. A four-wafer Mini LED backlight module comprises a back plate (1), a PCB (printed circuit board) board (2), Mini LED lamp beads (3), a backlight driver (4), fixing screws (5), supporting columns (6), reflecting paper (7), a diffusion sheet (8), a diffusion plate (9), a prism sheet (10) and a liquid crystal screen (11), and is characterized in that;
mini LED lamp beads (3) are arranged on the upper surface of the PCB (2), four wafers are welded on the upper surface of the PCB (2) by the Mini LED lamp beads (3), and the four wafers are independently controlled by a backlight driver (4);
four wafers in the Mini LED lamp beads (3) respectively emit red light, green light, blue light and white light, and the ratio of the driving currents of the corresponding wafers is 1:3:6: 6.
2. The four-chip Mini LED backlight module set forth in claim 1, wherein the width of the chip in the Mini LED bead (3) is less than 200 μm.
3. The four-chip Mini LED backlight module as claimed in claim 1, wherein the light mixing distance OD of the backlight module is at most 1:2 to the distance between the Mini LED lamp beads (3).
4. The four-chip Mini LED backlight module according to claim 1, wherein the four chips of the Mini LED beads (3) comprise a first Mini LED chip (31), a second Mini LED chip (32), a third Mini LED chip (33), and a fourth Mini LED chip (34), and the first Mini LED chip (31), the second Mini LED chip (32), the third Mini LED chip (33), and the fourth Mini LED chip (34) are arranged in a 2 x 2 arrangement; the first Mini LED chip (31), the second Mini LED chip (32), the third Mini LED chip (33) and the fourth Mini LED chip (34) are red chips, green chips, blue chips and chip size package CSP; the CSP is a blue flip chip covered with phosphor and packaging glue.
5. The four-chip Mini LED backlight module as claimed in claim 1, wherein the outer sides of the four chips of the Mini LED lamp beads (3) are provided with reflective walls (36), the reflective walls (36) are arc-shaped bumps, and the inner side surfaces of the reflective walls (36) are inclined outwards; the four reflecting walls (36) are distributed along the center of the Mini LED lamp beads (3) according to a circular matrix.
6. The four-chip Mini LED backlight module according to claim 1, wherein the PCB (2) is provided with fixing screw holes (21), and the fixing screws (5) are used for fixedly mounting the PCB (2) on the back plate (1) through the fixing screw holes (21); the upper surface of the PCB (2) is fixedly provided with a support column (6), and the surface of the PCB (2) is covered with a piece of reflection paper (7); a diffusion sheet (8), a diffusion plate (9), a prism sheet (10) and a liquid crystal screen (11) are sequentially arranged above the PCB (2), and the diffusion sheet (8) is supported by support columns (6).
7. The four-chip Mini LED backlight module according to claim 1, wherein the back side of the PCB board (2) is provided with a backlight driver (4).
8. The four-chip Mini LED backlight module as claimed in claim 1, wherein the Mini LED lamp beads (3) are provided with a silicone lens (35), and the silicone lens (35) covers and wraps the four chips.
9. The four-chip Mini LED backlight module as claimed in claim 1, wherein the silicone lens (35) is made by curing thermosetting silicone, and the silicone lens (35) contains diffusion powder; the diffusion powder is made of TiO2Powder constitution。
10. The four-wafer Mini LED backlight module according to claim 1, wherein the four wafer surfaces of the Mini LED lamp beads (3) are all fan-shaped structures, the four wafers of the Mini LED lamp beads (3) are respectively a first fan-shaped Mini LED wafer (37), a second fan-shaped Mini LED wafer (38), a third fan-shaped Mini LED wafer (39) and a fourth fan-shaped Mini LED wafer (310), and the first fan-shaped Mini LED wafer (37), the second fan-shaped Mini LED wafer (38), the third fan-shaped Mini LED wafer (39) and the fourth fan-shaped Mini LED wafer (310) are combined to form a circle.
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CN115598887A (en) * | 2022-11-04 | 2023-01-13 | 安徽芯瑞达科技股份有限公司(Cn) | Improve ultra-thin Mini LED backlight of polycrystal COB of colour gamut |
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