CN113702446A - Method for testing micro-resistance of through hole of ceramic substrate - Google Patents
Method for testing micro-resistance of through hole of ceramic substrate Download PDFInfo
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- CN113702446A CN113702446A CN202111034394.9A CN202111034394A CN113702446A CN 113702446 A CN113702446 A CN 113702446A CN 202111034394 A CN202111034394 A CN 202111034394A CN 113702446 A CN113702446 A CN 113702446A
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 239000000919 ceramic Substances 0.000 title claims abstract description 62
- 238000012360 testing method Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 238000010998 test method Methods 0.000 claims abstract description 12
- 238000009713 electroplating Methods 0.000 claims abstract description 8
- 239000000523 sample Substances 0.000 claims abstract description 8
- 238000001883 metal evaporation Methods 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 239000011799 hole material Substances 0.000 abstract description 68
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000011056 performance test Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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Abstract
The invention discloses a method for testing micro-resistance of a through hole of a ceramic substrate, which comprises the steps of preparing holes with different apertures on the ceramic substrate, filling the holes by adopting a metal evaporation or electroplating process, then carrying out metal interconnection on the upper surface and the lower surface of the ceramic substrate, adopting a multi-probe mode, finally obtaining the surface resistivity value of the through hole by measuring and calculating, and then multiplying the surface resistivity value by different areas to obtain the resistance values of different through holes, thereby realizing the rapid test of the on-resistance of the through hole material of the ceramic substrate, measuring the density and the quality of the through hole filling, fitting the tested resistance values, realizing the resistance test of various through hole sizes, effectively simplifying the test procedures, improving the test efficiency and the test precision, reducing the possibility of device failure, being applicable to the resistance test of large-size through holes, such as the performance test of a vertical packaging substrate of a large-through-hole compact power device, the method is not limited to the field of integrated circuits, comprises high-power ceramic substrate power devices and has wide application range.
Description
Technical Field
The invention relates to the technical field of micro-resistance testing, in particular to a method for testing through hole micro-resistance of a ceramic substrate.
Background
With the development of the technology, the integration level of the ceramic substrate is higher and higher, more and more power devices are included in the system, the through holes are generally prepared in a laser drilling mode, the interconnection is performed by filling metal materials, the interconnection lines are more and more complex, and the sizes of the through holes are smaller and smaller.
The principle of measuring the on-resistance of a via is generally: and (3) adopting a test structure, manufacturing a test substrate, and measuring the resistance of the test structure to finally obtain the through hole resistance.
The invention patent with the publication number of CN101762750A and the name of through hole resistance measurement structure and method discloses a through hole resistance measurement structure and method, the structure comprises a plurality of mutually vertical interconnection lines, a plurality of resistance measurement points are arranged on the interconnection lines, but the test structure calculates the through hole resistance when the distance is zero according to linear fitting, only the resistance with fixed through hole size can be evaluated, and repeated measurement is needed. When the size of the through hole changes, the test circuit needs to be redesigned, which is time-consuming and labor-consuming. And only can measure the resistance of the small-size through hole in the field of integrated circuits, and the application range is narrow.
Disclosure of Invention
In view of the above-mentioned shortcomings, the present invention provides a method for testing the micro-resistance of a via hole of a ceramic substrate, which can test the surface resistivity of the via hole and estimate the resistance of the via hole with different apertures.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a method for testing through hole micro-resistance of a ceramic substrate comprises the following steps:
(1) preparing ceramic substrates, e.g. AlN, Al2O3The high-thermal-conductivity dielectric materials such as SiN, ZrO2 and diamond are processed into a plurality of through holes with inconsistent apertures on the ceramic substrate by adopting laser, photoetching or etching, for example, the aperture of each through hole can be selected within the range of 1-500 um, and the depth of each through hole is 100-5 mm; the number of the through holes is 2-10;
(2) coating films on the upper and lower surfaces of the ceramic substrate in a metal evaporation or electroplating mode to form an upper metal layer and a lower metal layer;
(3) filling a through hole on the ceramic substrate by adopting metal materials such as Cu, Au, Al, Ni, Ti and the like through electroplating, sputtering, evaporation or spin coating to form a conductor which leads the upper metal layer and the lower metal layer to be conducted;
(4) the upper metal layer or/and the lower metal layer on the surface of the ceramic substrate are photoetched to form the upper test electrode and the lower test electrode which can separate and insulate the conductors in different apertures and conduct the conductors in the same aperture, preferably, the area sizes of the different upper test electrodes and the different lower test electrodes are preferably consistent, and the consistency of test conditions is ensured;
(5) and testing the resistance value of each through hole by adopting a multi-probe mode, obtaining the surface resistivity value of the through hole through calculation, and obtaining the actual resistance value by multiplying the surface resistivity value by the aperture size. Specifically, a four-probe method is adopted to test the resistance value of each through hole, then the square of the radius is used as an X axis, the resistance value is used as a Y axis, curve drawing is carried out, a curve is fitted, the slope is the value of the surface resistivity, and for the through holes with any aperture, the surface resistivity obtained through fitting is combined according to the area of the through holes, so that the actual resistance value is calculated.
The invention has the beneficial effects that: the invention prepares holes with different apertures on the ceramic substrate, fills the holes by adopting a metal evaporation or electroplating process, then performs metal interconnection on the upper surface and the lower surface of the ceramic substrate, adopts a multi-probe mode, finally obtains the surface resistivity value of the through hole through measurement and calculation, then obtains the resistance values of different through holes by multiplying the surface resistivity value by different areas, realizes the rapid test of the on-resistance of the through hole material of the ceramic substrate, measures the filling density and quality of the through hole, and fits the tested resistance values, realizes the resistance test of various through hole sizes, effectively simplifies the test procedures, improves the test efficiency and precision, thereby reducing the possibility of device failure, being applicable to the resistance test of large-size through holes, such as the performance test of a large-through hole compact power device vertical packaging substrate, not limited in the field of integrated circuits, and comprising the high-power ceramic substrate power device, the application range is wide.
The invention is further described with reference to the following figures and examples.
Drawings
Fig. 1 is a structure diagram of a through hole resistance test in embodiment 1 of the present invention.
FIG. 2 is a graph of experimental test data and fit curves for example 1 of the present invention.
FIG. 3 is a graph of experimental test data and fit curves for example 2 of the present invention.
Detailed Description
Example 1: the embodiment provides a method for testing through hole micro-resistance of a ceramic substrate, which comprises the following steps:
(1) in the embodiment, the ceramic substrate 1 is made of AlN high thermal conductivity dielectric material with a thickness of 1mm, and can be used for heat dissipation of the high-power integrated light source. Adopting laser to vertically process four through holes 11 with the apertures of 10um, 50um, 100um and 200um on the ceramic substrate 1;
(2) coating films on the upper and lower surfaces of the ceramic substrate 1 in a metal evaporation mode to form an upper metal layer 2 and a lower metal layer 3;
(3) filling the through holes 11 on the ceramic substrate 1 by adopting metal materials such as Cu, Au, Al, Ni, Ti and the like in an electroplating mode to form a conductor which leads the upper metal layer 2 and the lower metal layer 3 to be conducted;
(4) photoetching and patterning the lower metal layer 3 on the surface of the ceramic substrate 1 to form lower test electrodes which enable all conductors to be separated and insulated, wherein the areas of all the lower test electrodes are preferably consistent, and the consistency of test conditions is ensured; the upper metal layer 2 of the ceramic substrate 1 is not processed, and an upper test electrode which enables all conductors to be communicated is correspondingly formed; in other embodiments, the upper metal layer 2 of the ceramic substrate 1 may be processed to form an upper test electrode, which allows the conductors in different apertures to be isolated and insulated and the conductors in the same aperture to be conducted;
(5) the through holes 11 with the apertures of 10um, 50um, 100um and 200um are tested by adopting a four-probe method, and the resistance values of the through holes 11 with four different apertures are obtained, and the specific numerical values are shown in table 1.
TABLE 1
| Aperture (um) | 10 | 50 | 100 | 200 |
| Resistance (m omega) | 4.011 | 3.6484 | 2.816 | 0.4669 |
Then, the square of the radius is taken as the X axis, the resistance value is taken as the Y axis, and a curve is plotted and fitted, and the result is shown in fig. 2. The slope is the value of the surface resistivity, and the surface resistivity obtained by combining the through hole area and fitting is 8.6E-5 omega/um2In the case of a ceramic substrate having a thickness of 1mm, holes having a radius of 100um had a resistance of 2.7004 Ω according to the calculation formula "plane resistivity X area", and so on for the other holes.
Example 2: the embodiment provides a method for testing through hole micro-resistance of a ceramic substrate, which comprises the following steps:
(1) a ceramic substrate is prepared, in this example, with AlN or Al having a thickness of 100um2O3The high-thermal-conductivity dielectric material is used as a ceramic substrate and can be used for heat dissipation of low-power discrete devices. Four through holes with the apertures of 2um, 5um, 10um and 20um are vertically processed on the ceramic substrate by adopting photoetching and etching;
(2) coating films on the upper and lower surfaces of the ceramic substrate in a metal evaporation mode to form an upper metal layer and a lower metal layer;
(3) filling the through holes on the ceramic substrate with metal materials such as Cu, Au, Al, Ni, Ti and the like in an electroplating mode to form a conductor which enables the upper metal layer and the lower metal layer to be conducted;
(4) photoetching and patterning the lower metal layer on the surface of the ceramic substrate to form lower test electrodes which enable all conductors to be separated and insulated, wherein the areas of all the lower test electrodes are preferably consistent, so that the consistency of test conditions is ensured; the upper metal layer of the ceramic substrate is not processed, and an upper test electrode which enables all conductors to be communicated is correspondingly formed;
(5) adopt four probe modes to test the through-hole that the aperture is 2um, 5um, 10um, 20um, obtain the resistance value of four different diameter through-holes, specific numerical value is shown in table 2.
TABLE 2
| Aperture (um) | 5 | 10 | 15 | 20 |
| Resistance (m omega) | 1.5196 | 1.2568 | 0.7665 | 0.0934 |
Then, the square of the radius is taken as the X axis, the resistance value is taken as the Y axis, and a curve is plotted and fitted, and the result is shown in fig. 3. The slope is the value of the surface resistivity, and the surface resistivity obtained by combining the through hole area and fitting is 3.82E-4 omega/um2For a ceramic substrate having a thickness of 100um, a hole having a radius of 10um has a resistance of 0.18388 Ω according to the calculation formula "plane resistivity X area", and so on for other hole diameters.
The above examples are only preferred embodiments of the present invention, and the present invention is not limited to all embodiments, and any technical solution using one of the above examples or equivalent changes made according to the above examples is within the scope of the present invention. The invention prepares the holes with different apertures on the ceramic substrate, then fills the holes, then performs metal interconnection on the upper surface and the lower surface of the ceramic substrate, obtains the surface resistivity value of the through hole by testing the resistance values of the through holes with different apertures and calculating, thereby obtaining the actual resistance value by multiplying the surface resistivity value by the aperture, the test is more accurate for the through hole with large size, the repeated measurement of the resistance value without process change due to the size change of the through hole is reduced, the test procedure is simplified, the application range is wide, and the application materials comprise AlN ceramic and Al ceramic2O3The ceramic, SiN, ZrO2, diamond and the like are not limited to the field of integrated circuits, and for example, the performance test of a vertical packaging substrate of a large-through-hole compact power device and the test of a power device of a high-power ceramic substrate can be applied.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. Other methods, which may be obtained by the same or similar steps as those described in the above embodiments of the present invention, are within the scope of the present invention.
Claims (10)
1. A method for testing through hole micro-resistance of a ceramic substrate is characterized by comprising the following steps:
(1) preparing a ceramic substrate, and processing a plurality of through holes with inconsistent apertures on the ceramic substrate;
(2) coating films on the upper surface and the lower surface of the ceramic substrate to form an upper metal layer and a lower metal layer;
(3) filling the through holes on the ceramic substrate with a metal material to form a conductor which enables the upper metal layer and the lower metal layer to be communicated;
(4) photoetching an upper metal layer or/and a lower metal layer on the surface of the ceramic substrate to form an upper test electrode and a lower test electrode which can separate and insulate conductors in different apertures and conduct the conductors in the same aperture;
(5) and testing the resistance value of each through hole by adopting a multi-probe mode, obtaining the surface resistivity value of the through hole through calculation, and obtaining the actual resistance value by multiplying the surface resistivity value by the aperture size.
2. The ceramic substrate via micro-resistance test method of claim 1, wherein: and (2) processing a through hole on the ceramic substrate by adopting laser, photoetching or etching in the step (1).
3. The ceramic substrate via micro-resistance test method of claim 1, wherein: and (2) coating by adopting a metal evaporation or electroplating mode.
4. The ceramic substrate via micro-resistance test method of claim 1, wherein: the ceramic substrate is AlN or Al2O3、SiN、ZrO2And diamond.
5. The ceramic substrate via micro-resistance test method of claim 1, wherein: the aperture of the through hole is 1-500 um, and the depth is 100 um-5 mm.
6. The ceramic substrate via micro-resistance test method of claim 1, wherein: the metal material is any one of Cu, Au, Al, Ni and Ti.
7. The ceramic substrate via micro-resistance test method of claim 1, wherein: and (3) filling the through holes on the ceramic substrate by adopting an electroplating, sputtering, evaporation or spin coating mode.
8. The ceramic substrate via micro-resistance test method of claim 1, wherein: the number of the through holes is 2-10.
9. The ceramic substrate via micro-resistance test method of claim 1, wherein: the area sizes of different upper and lower test electrodes are consistent.
10. The ceramic substrate via micro-resistance test method according to any one of claims 1 to 7, wherein: the step (5) specifically comprises the following steps:
and testing the resistance value of each through hole by adopting a four-probe method, then drawing a curve by taking the square of the radius as an X axis and the resistance value as a Y axis, fitting the curve, wherein the slope is the value of the surface resistivity, and for the through holes with any aperture, combining the surface resistivity obtained by fitting according to the area of the through holes so as to calculate the actual resistance value.
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