CN113699495B - Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method - Google Patents
Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method Download PDFInfo
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- CN113699495B CN113699495B CN202110684599.5A CN202110684599A CN113699495B CN 113699495 B CN113699495 B CN 113699495B CN 202110684599 A CN202110684599 A CN 202110684599A CN 113699495 B CN113699495 B CN 113699495B
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 106
- 230000007246 mechanism Effects 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 58
- 239000010408 film Substances 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 abstract description 32
- 238000006243 chemical reaction Methods 0.000 abstract description 23
- 238000000151 deposition Methods 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 14
- 239000013077 target material Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a magnetron sputtering component, which comprises a fixed disk, a rotary driving mechanism and a magnetron arranged on the fixed disk, wherein the rotary driving mechanism is used for driving the fixed disk to rotate, the magnetron comprises a plurality of magnetic poles, the plurality of magnetic poles are sequentially arranged along a plurality of mutually nested spiral curves, the polarity of the plurality of magnetic poles arranged along any spiral curve is opposite to the polarity of the plurality of magnetic poles arranged along the adjacent spiral curve, and the polarity of at least one magnetic pole positioned in the center of the curve in the plurality of magnetic poles arranged along any spiral curve is opposite to the polarity of other magnetic poles. The technical scheme provided by the invention improves the field intensity distribution uniformity of the magnetic field generated by magnetron rotation, thereby improving the uniformity of the film deposition rate in the magnetron sputtering reaction. The invention also provides a magnetron sputtering device and a magnetron sputtering method.
Description
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a magnetron sputtering assembly, a magnetron sputtering device comprising the magnetron sputtering assembly and a magnetron sputtering method applied to the magnetron sputtering device.
Background
In recent years, with the rapid development of ultra-large scale integrated circuit technology, the feature size of electronic devices in the circuit is continuously reduced, the device density is continuously increased, and RC Delay (RC Delay, i.e. signal Delay caused by resistance (R) and capacitance (C)) caused by metallization interconnection is already becomingReducing RC hysteresis is a key factor in impeding ultra-high density integrated circuit performance and speed, and has become the dominant direction of attack in the semiconductor industry in recent years. In integrated circuit fabrication, metal lines are typically embedded in an interlayer dielectric (ILD, interlevel dielectric) material having a low dielectric constant, and in damascene interconnect processes, etch stop layers are typically deposited on separate ILD layers and metal lines and used in patterning of IC fabrication processes to protect the material underlying these layers from etching during patterning, while the etch stop layers are typically not completely removed and remain as a thin film between thicker ILD layers in the final fabricated semiconductor device. Aluminum oxide (AlO) x ) AlO used in advanced processes of technology generation below 10 nm due to its excellent etching selectivity, good insulation and proper dielectric constant x The etching stop layer of the material can reduce the crosstalk between metal lines and RC delay and protect the porous low-K material (insulating material) of the bottom layer while not causing oxidation of the metal layer.
Preparation of AlO x The thin film is usually formed by adopting a magnetron sputtering technology in a PVD (Physical Vapor Deposition ) process, and compared with a CVD (Chemical VaporDeposition ) process, the magnetron sputtering technology has the advantages of good uniformity, low impurity, high density and the like. The technical generation below 10 nanometers has more severe requirements on the overall performance of the film, the requirement on the thickness non-uniformity of the grown film is less than 2 percent, and meanwhile, the uniformity of the components of the film is ensured, so that the uniformity of subsequent wet etching is ensured, the penetration phenomenon is avoided, and the product yield of the wafer is improved.
However, when the non-conductive oxide film is prepared by adopting an aluminum target and oxygen through reactive sputtering in the traditional PVD method, the magnetic field and the reactive gas are unevenly distributed, and the requirement of the technical generation below 10 nanometers on the thickness uniformity of the aluminum oxide film is difficult to be met. Therefore, how to provide a magnetron sputtering device structure capable of improving uniformity of preparing a thin film by a magnetron sputtering technology is a technical problem to be solved in the field.
Disclosure of Invention
The invention aims to provide a magnetron sputtering assembly, a magnetron sputtering device and a magnetron sputtering method, wherein the magnetron sputtering assembly can improve the uniformity of a film deposition rate in a magnetron sputtering reaction and the product yield of a wafer.
In order to achieve the above object, as one aspect of the present invention, there is provided a magnetron sputtering assembly in a semiconductor process apparatus including a fixed disk, a rotation driving mechanism for driving the fixed disk to rotate around an axis of the fixed disk, and a magnetron provided on the fixed disk, the magnetron including a plurality of magnetic poles sequentially arranged along a plurality of mutually nested spiral curves, a polarity of the plurality of magnetic poles arranged along any one spiral curve being opposite to a polarity of the plurality of magnetic poles arranged along an adjacent spiral curve, and a polarity of at least one magnetic pole located at a center of the spiral curve among the plurality of magnetic poles arranged along any one spiral curve being opposite to a polarity of other magnetic poles.
Optionally, the magnetron sputtering assembly includes a first magnetic pole group and a second magnetic pole group, where a plurality of the magnetic poles in the first magnetic pole group are sequentially arranged along a first spiral curve, a plurality of the magnetic poles in the second magnetic pole group are sequentially arranged along a second spiral curve, the first spiral curve is sleeved in the second spiral curve, the polarities of the plurality of the magnetic poles in the first magnetic pole group are opposite to those of the plurality of the magnetic poles in the second magnetic pole group, the polarities of the magnetic poles in the first magnetic pole group at the center of the first spiral curve are opposite to those of the other magnetic poles in the first magnetic pole group, and the polarities of the magnetic poles in the second magnetic pole group at the center of the second spiral curve are opposite to those of the other magnetic poles in the second magnetic pole group.
Optionally, the first spiral curve includes a first sub-curve and a second sub-curve which are sequentially connected, the second spiral curve includes a third sub-curve, a fourth sub-curve and a fifth sub-curve which are sequentially connected, the shape of the first sub-curve is consistent with that of the third sub-curve, and the first sub-curve and the third sub-curve are symmetrically arranged about the center of the fixed disk; the first spiral curve is arranged on the outer side of the third sub-curve in a surrounding mode, the fifth sub-curve is arranged on the outer side of the first spiral curve in a surrounding mode, and the free end of the fourth sub-curve, which bypasses the second sub-curve, is connected with the third sub-curve and the fifth sub-curve.
Optionally, the first, second, third and fifth sub-curves extend helically in a clockwise direction on the fixed disk, and the fourth sub-curve extends helically in a counter-clockwise direction on the fixed disk.
Optionally, the polarity of the magnetic pole in the center of the first spiral curve in the first magnetic pole group is a south pole, the polarity of the other magnetic poles in the first magnetic pole group is a north pole, the polarity of the magnetic pole in the center of the second spiral curve in the second magnetic pole group is a north pole, and the polarity of the other magnetic poles in the second magnetic pole group is a south pole.
As a second aspect of the present invention, there is provided a magnetron sputtering apparatus comprising a process chamber and a magnetron sputtering assembly disposed on the process chamber for applying a magnetic field into the process chamber, the magnetron sputtering assembly being the magnetron sputtering assembly described above.
As a third aspect of the present invention, there is provided a magnetron sputtering method applied to the magnetron sputtering apparatus as described above, comprising:
a first process step of introducing an oxidizing sputtering gas into the process chamber;
the second process step, exciting the oxidizing sputtering gas into plasma, and simultaneously controlling the magnetron sputtering component to apply a magnetic field into the process chamber to perform magnetron sputtering to generate an oxide film;
and a third process step of introducing a reducing gas into the process chamber to reduce the oxygen content of the oxide film edge.
Optionally, the oxidizing sputtering gas comprises oxygen and the reducing gas comprises hydrogen.
Optionally, in the third process step, the pressure in the process chamber is 50-500mTorr.
Optionally, the first process step, the second process step and the third process step are cyclically performed until the thickness of the oxide thin film reaches a preset target thickness.
In the magnetron sputtering component and the magnetron sputtering device provided by the embodiment of the invention, the magnetic poles are sequentially arranged along a plurality of spiral curves, and the polarity of the magnetic pole arranged along any spiral curve is opposite to the polarity of the magnetic pole arranged along the adjacent spiral curve, so that the magnetic poles with the same polarity are arranged in a single row no matter in a central area or an edge area, the field intensity distribution uniformity of a magnetic field generated by magnetron rotation is improved, the polarity of at least one magnetic pole positioned at the inner side in the magnetic pole arranged along the same spiral curve is opposite to the polarity of other magnetic poles on the same curve, the field intensity distribution uniformity of the magnetic field in the central area of the magnetron is ensured, the uniformity of film deposition rate in the magnetron sputtering reaction is further improved, the thickness uniformity of a film is finally obtained, and the product yield of a wafer is improved.
In the magnetron sputtering method provided by the invention, after the oxide sputtering gas reacts with the target material to generate the oxide of the target material, the reducing gas introduced in the third process step can react with oxygen element in the compound, so that the oxygen element content in the compound is consumed, the distribution of oxygen atoms in the film is changed, the uniformity of film components is improved, and the product yield of chip devices on a wafer is further improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:
FIG. 1 is a schematic view of a conventional magnetron sputtering apparatus;
FIG. 2 is a schematic view of the shape of a magnetron in a conventional magnetron sputtering apparatus;
FIG. 3 is a schematic view showing the distribution of magnetic poles of a magnetron in a conventional magnetron sputtering apparatus;
FIG. 4 is a schematic diagram showing the magnetic pole distribution of a magnetron in a magnetron sputtering assembly according to an embodiment of the invention;
FIG. 5 is a schematic diagram showing the magnetic pole distribution of a magnetron in a magnetron sputtering assembly according to an embodiment of the invention;
FIG. 6 is a schematic diagram showing the magnetic pole distribution of a magnetron in a magnetron sputtering assembly according to an embodiment of the invention;
FIG. 7 is a schematic view of a corrosion track on a target corresponding to a magnetron sputtering assembly provided by an embodiment of the invention;
FIG. 8 is a schematic diagram showing the distribution of magnetic field intensity on the surface of a target material compared with the prior art when the magnetron sputtering equipment provided by the embodiment of the invention performs the magnetron sputtering reaction;
FIG. 9 is a schematic diagram comparing the thickness distribution of a film obtained by performing a magnetron sputtering reaction by using a magnetron sputtering apparatus according to an embodiment of the present invention with the prior art;
FIG. 10 is a schematic diagram showing the thickness distribution of a thin film obtained by performing a magnetron sputtering reaction in a magnetron sputtering apparatus according to an embodiment of the present invention after performing wet etching, compared with the prior art;
FIG. 11 is a schematic diagram showing the correspondence between the non-uniformity of the film thickness and the target loss time obtained when performing a plurality of magnetron sputtering reactions in a magnetron sputtering apparatus according to an embodiment of the present invention;
FIG. 12 is a schematic diagram showing a correspondence between thickness unevenness and target loss time after wet etching of a thin film obtained by performing a plurality of magnetron sputtering reactions in a magnetron sputtering apparatus according to an embodiment of the present invention;
fig. 13 is a schematic flow chart of a magnetron sputtering method according to an embodiment of the invention.
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
As shown in fig. 1, a magnetron sputtering apparatus for a conventional PVD sputtering process has a circular process chamber 1, and a carrier plate 5 (having a heating or cooling function) provided in the process chamber 1 for carrying a wafer. The vacuum pump system 2 can evacuate the process chamber 1 to a background vacuum level of greater than 10-6Torr in the interior of the process chamber 1. The gas source 4 may provide process gases (e.g., argon, oxygen, etc.) required for sputtering to the process chamber 1 via the flow meter 3. A target 6 (either metal or metal compound) is provided on top of the process chamber 1. The upper sealing cavity 7 is made of insulating material (such as G10 material), the bottom of the upper sealing cavity 7 is connected with the target 6 in a sealing way, and the upper sealing cavity 7 is filled with deionized water 8.
In performing the sputtering reaction, a pulsed DC power supply applies power to the target 6to have a negative bias with respect to the grounded chamber, such that argon/oxygen ionizes the discharge to generate a plasma and attracts positively charged ions to the negatively biased target 6. When the energy of the ions is high enough, metal atoms are allowed to escape the target surface and deposit on the wafer. The magnetron 9 at the back of the target 6 comprises inner and outer poles of opposite polarity. The motor 12 drives the magnetron 9 to rotate, so that a uniform magnetic field is generated at all angles, and the sputtering deposition rate is greatly improved by the magnetic field, so that the metal oxide film is uniformly and efficiently deposited.
As shown in fig. 2, the magnetron in the existing magnetron sputtering device has a magnetic pole distribution shown in fig. 3 (the solid circle and the circular ring pattern in fig. 3 respectively show two polarities, for example, the solid circle shows a south pole and the circular ring shows a north pole), the inner ring magnetic pole of the magnetron shows a south pole (S pole), the outer ring magnetic pole shows a north pole (N pole), the magnetic poles near the central areas of the inner ring magnetic pole and the outer ring magnetic pole show double-row arrangement, the magnetic field intensity of the central area of the magnetic field generated by rotation is large, the marginal magnetic field intensity is small, the ion bombardment energy of the central area is high, the ion bombardment energy of the marginal area is low, the deposition rate of the central area of the film is high, the thickness of the film is large, and the uniformity of the film thickness of the film surface is further reduced (the annular area between the radius of the target material is 58mm-75mm, the radius is 120mm-150mm, the annular area between the radius is 210mm-222mm is a light corrosion track, namely the annular area between the radius is 0mm-58mm, the radius is 75mm-120mm, and the annular area between the radius is 150mm-210mm in fig. 3 is a heavy corrosion track).
In order to solve the technical problems and improve the thickness uniformity of a film prepared by magnetron sputtering reaction, as one aspect of the invention, a magnetron sputtering assembly is provided, which comprises a fixed disk, a rotary driving mechanism and a magnetron arranged on the fixed disk, wherein the rotary driving mechanism is used for driving the fixed disk to rotate around the axis of the fixed disk. As shown in fig. 4 and 5, the magnetron includes a plurality of magnetic poles (solid circle patterns and circular ring patterns respectively indicate magnetic poles of two polarities), the plurality of magnetic poles are sequentially arranged along mutually nested spiral curves, the polarity of the plurality of magnetic poles arranged along any spiral curve is opposite to the polarity of the plurality of magnetic poles arranged along adjacent spiral curves, and the polarity of at least one magnetic pole located at the center of the spiral curve among the plurality of magnetic poles arranged along any spiral curve is opposite to the polarity of other magnetic poles.
In the invention, the magnetic poles are sequentially arranged along a plurality of spiral curves, and the polarity of the magnetic pole arranged along any spiral curve is opposite to the polarity of the magnetic pole arranged along the adjacent spiral curve, so that the magnetic poles with the same polarity are arranged in a single row no matter in a central area or an edge area (namely, the situation that two rows of magnetic poles with the same polarity extend side by side in the same direction does not occur), the field intensity distribution uniformity of a magnetic field generated by magnetron rotation is improved, and the polarity of at least one magnetic pole positioned at the inner side in the magnetic pole arranged along the same spiral curve is opposite to the polarity of other magnetic poles on the same curve, thereby ensuring the field intensity distribution uniformity of the magnetic field in the central area of the magnetron, further improving the uniformity of film deposition rate in magnetron sputtering reaction and finally obtaining the thickness uniformity of films, and improving the product yield of wafers.
As an alternative embodiment of the present invention, as shown in fig. 4 to 6, the magnetron sputtering assembly includes a first magnetic pole group and a second magnetic pole group, wherein a plurality of magnetic poles in the first magnetic pole group are sequentially arranged along a first spiral curve 100, a plurality of magnetic poles in the second magnetic pole group are sequentially arranged along a second spiral curve 200, the first spiral curve 100 is sleeved in the second spiral curve 200, the polarity of the plurality of magnetic poles in the first magnetic pole group is opposite to the polarity of the plurality of magnetic poles in the second magnetic pole group, the polarity of the magnetic pole in the center of the first spiral curve 100 in the first magnetic pole group is opposite to the polarity of other magnetic poles in the first magnetic pole group, and the polarity of the magnetic pole in the center of the second spiral curve 200 in the second magnetic pole group is opposite to the polarity of the other magnetic poles in the second magnetic pole group.
The embodiment of the present invention does not specifically limit how the first spiral curve 100 and the second spiral curve 200 are nested with each other, as long as the first magnetic pole group and the second magnetic pole group are uniformly distributed and the double-row distribution of the magnetic poles of the single magnetic pole group does not occur, for example, as an optional implementation manner of the present invention, as shown in fig. 4 to 6, the first spiral curve 100 includes a first sub-curve 110 and a second sub-curve 120 sequentially connected, the second spiral curve 200 includes a third sub-curve 210, a fourth sub-curve 220, and a fifth sub-curve 230 sequentially connected, the shape of the first sub-curve 110 is consistent with the shape of the third sub-curve 210, and the first sub-curve 110 and the third sub-curve 210 are symmetrically arranged about the center of the fixed disk; the first spiral curve 100 is disposed around the outside of the third sub-curve 210, the fifth sub-curve 230 is disposed around the outside of the first spiral curve 100, and the fourth sub-curve 220 bypasses the free end (i.e., the end not connected to the first sub-curve 110) of the second sub-curve 120 to connect the third sub-curve 210 and the fifth sub-curve 230.
In the embodiment of the present invention, the first spiral curve 100 (including the first sub-curve 110 and the second sub-curve 120 which are sequentially connected), the third sub-curve 210 and the fifth sub-curve 230 are all spiral lines or similar spiral lines, and the rotation directions of the three are the same, and the fourth sub-curve 220 connects the third sub-curve 210 and the fifth sub-curve 230 in a smooth transition manner. The first spiral curve 100 corresponding to the first magnetic pole group is arranged around the outer side of the third sub-curve 210 corresponding to the second magnetic pole group, and the fifth sub-curve 230 corresponding to the second magnetic pole group is arranged around the outer side of the first spiral curve 100, so that a plurality of magnetic poles with the same polarity at any position are arranged in a single row, and the field intensity distribution uniformity of a magnetic field generated by magnetron rotation is improved through single row arrangement.
The angle at which the first spiral curve 100, the third sub-curve 210, and the fifth sub-curve 230 extend around the center of the fixed disk is not particularly limited in the embodiment of the present invention, for example, alternatively, as shown in fig. 5 and 6, the first spiral curve 100 and the fifth sub-curve 230 may extend around the center of the fixed disk for one revolution, and the third sub-curve 210 may extend around the center half of the fixed disk. That is, both ends of the first spiral curve 100, one end of the third sub-curve 210 located at the outside, and both ends of the fifth sub-curve 230 are located at the same side of the center of the fixed disk, and both ends of the third sub-curve 210 are located at opposite sides of the center of the fixed disk, respectively.
The spiral extending direction of the first spiral curve 100 and the second spiral curve 200 on the fixed disk is not particularly limited in the embodiments of the present invention, for example, optionally, as shown in fig. 4 to 6, the first sub-curve 110, the second sub-curve 120, the third sub-curve 210 and the fifth sub-curve 230 spirally extend in a clockwise direction on the fixed disk, and the fourth sub-curve 220 spirally extends in a counterclockwise direction on the fixed disk.
In the embodiment of the present invention, the polarities of the magnetic poles in the first magnetic pole group and the second magnetic pole group are not specifically limited, for example, alternatively, the polarity of the magnetic pole in the center of the first spiral curve 100 in the first magnetic pole group is a south pole (i.e. shown by a solid circle pattern in the figure), the polarity of the other magnetic poles in the first magnetic pole group is a north pole (i.e. shown by a circle pattern in the figure), the polarity of the magnetic pole in the center of the first spiral curve 100 in the second magnetic pole group is a north pole, and the polarity of the other magnetic poles in the second magnetic pole group is a south pole.
Compared with the existing magnetron, the magnetron magnetic field distribution in the magnetron sputtering assembly provided by the embodiment of the invention has more uniform energy distribution of ions sputtered by the corresponding target in the central area of the wafer, and the effect is shown in fig. 8 (the horizontal axis represents the radius of the wafer (from-R to +R, for example, when the radius of the wafer is 150mm, the horizontal axis represents-150 mm to +150 mm), and the vertical axis represents the magnetic field intensity).
When the magnetron sputtering component provided by the embodiment of the invention is used for providing a magnetic field for the target, the corrosion track formed on the surface of the target after sputtering reaction is shown in figures 4-7, the annular zone with the radius of 35-50 mm, the radius of 95-115 mm and the radius of 140-150 mm on the surface of the target is a light corrosion track, namely a shadow part area in the figure, the annular zone with the radius of 0-35 mm, the radius of 50-95 mm and the radius of 115-140 mm is a heavy corrosion track. The magnetron sputtering component provided by the embodiment of the invention changes the magnetic field intensity distribution of the target surface and the corrosion track of the target surface, thereby changing the ion distribution and the energy distribution in the film forming process, changing the thickness distribution trend of the film and improving the uniformity of the film thickness distribution in the magnetron sputtering reaction.
As a second aspect of the present invention, there is provided a magnetron sputtering apparatus comprising a process chamber and a magnetron sputtering assembly disposed above the process chamber, the magnetron sputtering assembly being configured to apply a magnetic field into the process chamber, wherein the magnetron sputtering assembly is provided by an embodiment of the present invention.
In the magnetron sputtering equipment provided by the invention, the magnetic poles are sequentially arranged along the plurality of spiral curves, and the polarity of the magnetic pole arranged along any spiral curve is opposite to the polarity of the magnetic pole arranged along the adjacent spiral curve, so that the magnetic poles with the same polarity are arranged in a single row no matter in a central area or an edge area (namely, the situation that two rows of magnetic poles with the same polarity extend side by side in the same direction) is avoided, the field intensity distribution uniformity of a magnetic field generated by magnetron rotation is improved, and the polarity of at least one magnetic pole positioned at the inner side in the magnetic pole arranged along the same spiral curve is opposite to the polarity of other magnetic poles on the same curve, the field intensity distribution uniformity of the magnetic field in the central area of the magnetron is ensured, the uniformity of film deposition rate in the magnetron sputtering reaction and the thickness uniformity of a finally obtained film are further improved, and the product yield of a wafer is improved.
As a third aspect of the present invention, there is provided a magnetron sputtering method applied to a magnetron sputtering apparatus provided by an embodiment of the invention, as shown in fig. 13, the method including:
a first process step S1, wherein an oxidizing sputtering gas is introduced into a process chamber;
a second process step S2, namely exciting the oxidizing sputtering gas into plasma, and simultaneously controlling a magnetron sputtering assembly to apply a magnetic field into the process chamber to perform magnetron sputtering to generate an oxide film;
and a third process step S3, introducing a reducing gas into the process chamber to reduce the oxygen content of the edge of the oxide film.
The magnetron sputtering method provided by the embodiment of the invention is realized by the magnetron sputtering device, in the magnetron sputtering device, the magnetic poles are sequentially arranged along a plurality of spiral curves, and the polarity of the magnetic pole arranged along any spiral curve is opposite to the polarity of the magnetic pole arranged along the adjacent spiral curve, so that the magnetic poles with the same polarity are arranged in a single column no matter in a central area or an edge area (namely, the situation that two columns of magnetic poles with the same polarity extend in the same direction side by side does not occur), the field intensity distribution uniformity of a magnetic field generated by magnetron rotation is improved, and the polarity of at least one magnetic pole positioned at the inner side in the magnetic pole arranged along the same spiral curve is opposite to the polarity of other magnetic poles on the same curve, so that the field intensity distribution uniformity of the magnetic field in the central area of the magnetron is ensured, the uniformity of film deposition rate in the magnetron sputtering reaction is improved, and finally the thickness uniformity of the film is obtained, and the product yield of wafers is improved.
In the magnetron sputtering method provided by the invention, after the oxidized sputtering gas reacts with the target material to generate the oxide of the target material, the reducing gas introduced in the third process step S3 can react with oxygen element in the compound, so that the oxygen element content in the compound is consumed, the distribution of oxygen atoms in the film is changed, the uniformity of film components is improved (in physical vapor deposition process equipment, the process chamber is generally edge air inlet, the reaction rate of the reducing gas and the oxide of the edge area is higher than the reaction rate of the reducing gas and the oxide of the central area in the step S3, so that the difference of the oxygen content of the edge area and the central area is further reduced, the uniformity of the oxygen content is improved, and the product yield of chip devices on a wafer is improved.
In some embodiments of the present invention, for example, when an oxide film having a thickness exceeding 10 nm is to be formed, the first process step S1, the second process step S2, and the third process step S3 may be cyclically performed until the thickness of the oxide film reaches a preset target thickness.
As an alternative embodiment of the present invention, the oxidizing sputtering gas may comprise oxygen and the reducing gas comprises hydrogen. After oxidizing sputtering gas oxidizes metal target material to generate metal oxide of target material metal, for example, after oxidizing aluminum oxide target material to generate oxide of aluminum (AlOX), maintaining the process pressure and temperature state of the chamber, introducing hydrogen into the process chamber, changing oxygen atom distribution in the film by utilizing the reducibility of the hydrogen, realizing secondary oxidation, reducing the oxygen content at the edge of the film, and improving the uniformity of film components.
In some embodiments of the invention, the oxidizing sputtering gas may also include an inert gas, e.g., the oxidizing sputtering gas may include oxygen and argon (Ar).
In order to adapt to the process requirements of different kinds of oxide films, preferably, the reducing gas may also be a mixed gas, for example, the reducing gas may include hydrogen and oxygen, and in the third process step S3, the reducing capability of the reducing gas may be changed by adjusting the component ratio between the hydrogen and the oxygen for different kinds of oxide films, so as to accurately control the reducing reaction rate at the edge of the film.
The embodiment of the present invention does not specifically limit the pressure inside the process chamber in each process step, for example, as an alternative embodiment of the present invention, in the first process step S1, the pressure in the process chamber is 3 to 20mTorr; in a third process step S3, the pressure within the process chamber is 50-500mTorr (preferably 200 mTorr).
The embodiment of the invention improves the performance and the process stability of the whole film through the cooperative optimization of the process method. As shown in fig. 9, when the magnetron sputtering assembly provided by the embodiment of the invention is used for providing a magnetic field to the target, the thickness of the central area of the film layer formed after the sputtering reaction is performed on the target is reduced, and such a thickness distribution profile is more beneficial to improving the process rate of the central area in the subsequent wet etching process (fig. 10 shows the thickness distribution situation of the film layer obtained after the wet etching is performed again on the film obtained by deposition).
As shown in FIG. 11, the thickness non-uniformity of the film obtained by the sputtering reaction according to the magnetron sputtering scheme provided by the embodiment of the invention is less than 2%, as shown in FIG. 12, the thickness non-uniformity of the film obtained by the subsequent wet etching is less than 3%, key process indexes such as uniformity of film components and the like are also greatly improved, in addition, as the corrosion rate of each part of the target material in the magnetron sputtering reaction is more uniform, the service life of the target material is also improved, and the magnetron sputtering scheme provided by the embodiment of the invention can improve the service life of the target material from 700 kilowatt hours to 2000 kilowatt hours, thereby reducing the process cost of the magnetron sputtering reaction and improving the overall performance of equipment.
For the convenience of understanding of those skilled in the art, the present invention also provides a specific embodiment of the above process steps:
in the first step (first process step S1), the carrier plate is controlled to be lifted to a process position, O2 (or mixed gas of Ar and O2) is introduced, the flow rate of O2 is 0-500 sccm (preferably 50-200 sccm, and the Ar flow rate is 0-500 sccm, preferably 0-200 sccm), and the pressure in the process chamber is maintained at 3-20 mTorr.
And a second step (a second process step S2), wherein the pressure in the process chamber is kept unchanged, the magnetron sputtering component is controlled to provide a magnetic field for a target in the process chamber, meanwhile, the DC is controlled to provide direct current voltage for the target, and aluminum atoms and oxygen atoms generated by bombardment of plasma on the surface of the target react on the surface of the wafer to form an AlOx film (the DC power is 0-20000W, preferably 1000-10000W).
And thirdly (a third process step S3), continuously introducing H2 (or mixed gas of O2 and H2), maintaining the pressure in the process chamber at 50-500mTorr (preferably 200 mTorr), and changing the oxygen atom distribution in the film by using H2 when the carrying disc is in a high-temperature state in the process.
It should be noted that the magnetron sputtering scheme provided in the embodiment of the invention is not only suitable for the process of forming the AlOx film, but also suitable for the magnetron sputtering reaction for preparing other material films, such as titanium dioxide (TiO 2), silicon dioxide (SiO 2), hafnium oxide (HfO), tantalum oxide (TaO), titanium oxynitride (TiON), silicon oxynitride (SiON), hafnium oxynitride (HfON), tantalum oxynitride (TaON), etc.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (10)
1. The magnetron sputtering component in the semiconductor process equipment comprises a fixed disk, a rotary driving mechanism and a magnetron arranged on the fixed disk, wherein the rotary driving mechanism is used for driving the fixed disk to rotate around the axis of the fixed disk.
2. The magnetron sputtering assembly of claim 1, wherein the magnetron sputtering assembly comprises a first magnetic pole group and a second magnetic pole group, a plurality of the magnetic poles in the first magnetic pole group are sequentially arranged along a first spiral curve, a plurality of the magnetic poles in the second magnetic pole group are sequentially arranged along a second spiral curve, the first spiral curve is sleeved in the second spiral curve, the polarities of the plurality of the magnetic poles in the first magnetic pole group are opposite to the polarities of the plurality of the magnetic poles in the second magnetic pole group, the polarities of the magnetic poles in the first magnetic pole group located at the center of the first spiral curve are opposite to the polarities of the other magnetic poles in the first magnetic pole group, and the polarities of the magnetic poles in the second magnetic pole group located at the center of the second spiral curve are opposite to the polarities of the other magnetic poles in the second magnetic pole group.
3. The magnetron sputtering assembly of claim 2, wherein the first spiral curve comprises a first sub-curve and a second sub-curve connected in sequence, the second spiral curve comprises a third sub-curve, a fourth sub-curve and a fifth sub-curve connected in sequence, the shape of the first sub-curve is consistent with the shape of the third sub-curve, and the first sub-curve and the third sub-curve are symmetrically arranged about the center of the fixed disk; the first spiral curve is arranged on the outer side of the third sub-curve in a surrounding mode, the fifth sub-curve is arranged on the outer side of the first spiral curve in a surrounding mode, and the free end of the fourth sub-curve, which bypasses the second sub-curve, is connected with the third sub-curve and the fifth sub-curve.
4. The magnetron sputtering assembly of claim 3 wherein the first, second, third and fifth sub-curves extend helically in a clockwise direction on the fixture disk and the fourth sub-curve extends helically in a counter-clockwise direction on the fixture disk.
5. The magnetron sputtering assembly of any of claims 2 to 4, wherein the poles of the first set of poles at the center of the first helical curve have a south pole, the poles of the other poles of the first set of poles have a north pole, the poles of the second set of poles at the center of the second helical curve have a north pole, and the poles of the other poles of the second set of poles have a south pole.
6. Magnetron sputtering apparatus comprising a process chamber and a magnetron sputtering assembly disposed on the process chamber for applying a magnetic field into the process chamber, characterized in that the magnetron sputtering assembly is a magnetron sputtering assembly according to any of claims 1 to 5.
7. A magnetron sputtering method applied to the magnetron sputtering apparatus as claimed in claim 6, comprising:
a first process step of introducing an oxidizing sputtering gas into the process chamber;
the second process step, exciting the oxidizing sputtering gas into plasma, and simultaneously controlling the magnetron sputtering component to apply a magnetic field into the process chamber to perform magnetron sputtering to generate an oxide film;
and a third process step of introducing a reducing gas into the process chamber to reduce the oxygen content of the oxide film edge.
8. The magnetron sputtering method of claim 7, wherein the oxidizing sputtering gas comprises oxygen and the reducing gas comprises hydrogen.
9. The magnetron sputtering method of claim 7, wherein in the third process step, the pressure in the process chamber is 50-500mTorr.
10. The magnetron sputtering method of claim 7, wherein the first process step, the second process step, and the third process step are cyclically performed until the thickness of the oxide thin film reaches a preset target thickness.
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| CN202110684599.5A CN113699495B (en) | 2021-06-21 | 2021-06-21 | Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method |
| TW111120111A TWI828169B (en) | 2021-06-21 | 2022-05-30 | Magnetron sputtering component, magnetron sputtering equipment and magnetron sputtering method |
| PCT/CN2022/095894 WO2022267833A1 (en) | 2021-06-21 | 2022-05-30 | Magnetron sputtering assembly, magnetron sputtering apparatus and magnetron sputtering method |
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| TW202300680A (en) | 2023-01-01 |
| WO2022267833A1 (en) | 2022-12-29 |
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