CN113686437A - Time domain spectral imaging chip based on super-structure surface - Google Patents
Time domain spectral imaging chip based on super-structure surface Download PDFInfo
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- 238000001914 filtration Methods 0.000 claims abstract description 41
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- 230000008859 change Effects 0.000 claims abstract description 10
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- 238000001228 spectrum Methods 0.000 claims description 33
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- 239000002086 nanomaterial Substances 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
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- 230000007547 defect Effects 0.000 abstract description 5
- 239000012782 phase change material Substances 0.000 abstract description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention discloses a time domain spectral imaging chip based on a super-structure surface, which sequentially comprises a CMOS image processor, a super-structure surface substrate, an ITO (indium tin oxide) conducting layer I, a dynamic super-structure surface structure and an ITO conducting layer II. The novel super-structure surface can carry out light regulation and control through a thin-layer structure with sub-wavelength thickness, the filter realized by utilizing the medium super-structure surface based on the Mie resonance theory overcomes the defects of high loss and low efficiency, the wavelength selection function can be realized by changing the size of the sub-wavelength structure, and the sub-wavelength structures with different sizes are arrayed in a small-amplitude range to realize narrow-wavelength filtering in a wide-band range on a single chip. On the basis, the time division filtering mode is that the variable refractive index materials such as phase change materials and liquid crystal materials are integrated on the filter, the time dimension is fully utilized, the time dynamic change of the filtering wave peak is realized through an electric control means, and the multichannel filtering is not required to be carried out through a method of adjusting and arraying the sub-wavelength structures.
Description
Technical Field
The invention relates to a time domain spectral imaging chip based on a super-structured surface, and belongs to the technical field of spectral imaging.
Background
The spectral imager is a device combining spectral characteristics and spatial image information, the core technology of the spectral imager is a spectral imaging technology, and the spectral imager is mainly used for performing spatial light splitting, modulation processing or calculation approximation and the like on light with complex components absorbed or emitted by a substance to restore spectral information of incident light and analyzing the composition and relative content of the substance on a lossless basis. Spectral imagers are generally composed of an optical portion and a control display portion, wherein the optical portion determines optical performance (such as spectral resolution, spectral sensitivity, imaging efficiency, etc.) of the spectral imager, and the spectral imager can be classified into three categories according to the light reconstruction principle of the optical system: dispersive spectral imager, filter spectral imager, and modulation spectral imager.
The dispersive type spectral imager disperses the optical signal into a plurality of light beams according to the wavelength on the space by utilizing dispersive elements such as a prism and a diffraction grating and focuses the light beams on a photoelectric detector; the modulation type multispectral imager is a non-spatial light splitting device which utilizes the modulation principle (such as Fourier transform) of circular hole light entering. The two multispectral imagers face the defects of heavy weight and large volume, and in order to adapt to the characteristics of light weight and miniaturization of the current equipment, the filter is used as a light splitting element to realize the stacking of the multispectral imager and a photoelectric detector in the vertical dimension, so that the weight and the volume of an optical system are greatly reduced, and the continuous sampling of a spectrum image region and a space image region is realized. For the selection of filters, most of the filters can be roughly classified into two types: the planar distribution multi-channel narrow-band filter and the planar distribution multi-channel wide-band filter can be collectively called as a space division filtering and light splitting filtering method, the former is similar to a reconstruction method of dispersion light splitting, and the latter calculates an approximate reconstruction spectrum by using algorithms based on compressed sensing and the like. Compared with the prior art, the reconstruction method using the narrow-band filter has very high requirements on the filtering performance (such as half-peak width, filtering efficiency and the like) of the filter; the reconstruction method using the broadband filter can have relatively loose requirements on the broadband filter, but has very high requirements on algorithm optimization, but no matter the narrowband filtering or the broadband filtering is based on a space division filtering light splitting method, the precision of a reconstructed spectrum needs to be increased by increasing a filtering channel, which means that the portability of the spectral imager is sacrificed by increasing the plane size while the spectral imaging performance is enhanced.
The invention provides a novel filtering spectral imaging chip technology, in particular to a time division filtering spectral imaging chip based on a super-structure surface. The novel super-structure surface can carry out light regulation and control through a thin-layer structure with sub-wavelength thickness, the filter realized by utilizing the medium super-structure surface based on the Mie resonance theory overcomes the defects of high loss and low efficiency, the wavelength selection function can be realized by changing the size of the sub-wavelength structure, and the sub-wavelength structures with different sizes are arrayed in a small-amplitude range to realize narrow-wavelength filtering in a wide-band range on a single chip. On the basis, the time division filtering mode is to integrate variable refractive index materials such as phase change materials and liquid crystal materials on a filter (such as a super-structure surface filter), fully utilize time dimension, realize the time dynamic change of a filtering peak through an electric control means, and do not need to carry out multi-channel filtering by a method of adjusting and arraying a sub-wavelength structure, which means that a spectral imaging function on a very small area can be realized by only using a single-channel filter. The time division filtering method realized by combining the super-structure surface and the phase-change material not only realizes extreme reduction on three-dimensional size, but also can realize high-quality spectral reconstruction without high-difficulty calculation optimization algorithm, and is undoubtedly the best choice for the performance, volume, weight and simplicity of the spectral imager.
The spatial division narrowband filtering spectroscopy is limited to arranging a plurality of narrowband filtering channels on a two-dimensional plane to improve the performance of the reconstructed spectrum (such as spectral resolution, reconstruction accuracy and the like), and therefore, a relatively large area is inevitably occupied. Meanwhile, the spectrum reconstruction realized by using the narrow-band filtering has very high performance requirements on the narrow-band filtering, such as accurate peak, small half-peak width, high efficiency and the like. For the super-structure surface of narrow-band filtering, the micro-nano manufacturing technology is relatively difficult to prepare a high-precision and stable micro-nano structure, and the arrangement of a multi-channel narrow-band filter undoubtedly increases the difficulty of the preparation of the micro-nano structure.
The core method of the space division broadband filtering light splitting method is that an irregular broadband frequency spectrum is used as a sub-sampling process of a compressed sensing algorithm, a preset spectrum Hi (lambda) is used as an observation matrix, and an intensity signal I acquired by a CMOS (complementary metal oxide semiconductor) is used as an intensity signal IiAs observed values, the following formula
And finally, calculating to obtain the spectrum f (lambda) to be measured. This approach can achieve a higher resolution (i.e., larger M) restored spectrum with fewer filter channels N.
Like the space division narrowband filtering and splitting method, the space division broadband filtering and splitting method can make up for the difference of optical performance by using a calculation method without high-quality filtering performance, and can realize high-resolution high-precision spectrum reconstruction relative to the narrowband filtering method without too many channels, but generally, the performance is still limited by the number of filtering channels, so that a relatively large plane area still needs to be occupied. Meanwhile, the spectrum reconstruction by using the calculation method needs to optimize the algorithm to make up the deficiency of the optical performance, so the technology still has the defects. TIABC ═ (ultra-surface OR ultra-structured surface ORmetasurface) AND TIABC ═ (variable refractive index OR variable phase change material OR liquid crystal material); filtering TIABC (super surface or super structure surface) AND TIABC (variable refractive index or refractive index variable or variable material or liquid crystal material).
Disclosure of Invention
The invention combines the super-structure surface with the refractive index variable material to realize the dynamically adjustable super-structure surface filter as the core element of the spectral imaging chip, can fully utilize the time dimension, ensures that one dynamic filter can respectively have the spectral characteristics of a plurality of different static filters at different moments, converts the means of improving the spectral resolution of the frequency domain from increasing the number of the filters to increasing the measurement times (refractive index change times), realizes the compression of the number of the filters, and makes it possible to obtain excellent spectral frequency domain resolution and imaging spatial resolution simultaneously.
The invention aims to optimize the defects of the filtering type spectral imaging instrument, most filtering type spectral imaging instruments are filters based on spatial distribution, the invention breaks through the inherent method model, replaces the traditional filter by utilizing the dynamically adjustable super-structure surface of the refractive index variable material and the super-structure surface technology, greatly reduces the volume and the weight of the traditional filter, and can realize the spectral imaging chip with high performance, small volume, light weight, simple process and small algorithm requirement by combining with the super-structure surface technology.
The time domain spectroscopic imaging chip mainly comprises the following 5 components. The CMOS image processor 1, the super-structure surface substrate 2, the ITO conducting layer I3, the dynamic super-structure surface structure 4 and the ITO conducting layer II 5 are sequentially arranged respectively. The super-structure surface base 2 is a quartz substrate with high transmittance, and ITO with an ITO conductive layer I of hundred nanometers is deposited on the quartz substrate to act as a conductive layer and a fixed layer. The dynamic nanostructured surface structure 4 is mainly composed of two parts: the first part is a super-structure surface structure which is composed of an array structure with a sub-wavelength scale, the material is a full dielectric medium such as titanium dioxide, unit structure parameters, shapes and periods of the full dielectric medium can be used for regulating and controlling spectral performance, the second part is a refractive index variable layer which is commonly a liquid crystal material and the like, and the super-structure surface is combined with a liquid crystal layer through a liquid crystal packaging process to form a dynamic super-structure surface structure. The basic structure and the material of the ITO conducting layer II are the same as those of the ITO conducting layer I3, and the ITO conducting layer II is mainly used for conducting electricity, separating a fixed layer, a spacing layer and the like.
As shown in fig. 1, the structure of the time-domain spectroscopic imaging chip is schematically illustrated, and the invention is composed of two parts, namely a principle scheme, a chip structure and an integration method.
The super-structure surface is a novel super-flat, ultra-thin and ultra-light optical element composed of sub-wavelength scale structures. By taking the mie resonance theory as a guiding theory, the dielectric nano structure can excite stronger dipole resonance in a visible light wave band range, a strong scattering phenomenon depending on wavelength can be generated under the resonance interaction of an electric dipole and a magnetic dipole, and the resonance wavelength is influenced by the refractive index of the structure and the surrounding environment. By changing the refractive index of the structure (e.g., phase change of the structure material), or the refractive index of the environment (e.g., molecular orientation of the liquid crystal material), the resonant frequency can be changed, changing the position of the reflection peak in the spectrum. The dielectric nano structure with the sub-wavelength scale is combined with the Mie's theory, and the visible light filter with the extremely small volume can be obtained to be used as a light splitting element of the spectral imaging chip.
It can be known that the optical signal input into the spectral imaging chip usually does not change with time, so that different refractive indexes can be set at different times, and the dielectric nanostructure of the same filtering pixel can generate resonant reflection peaks with different frequencies at different times. The reflection spectrum of the static filter is fixed and cannot be changed, and if higher frequency domain resolution is required, the number of the filters can be increased to obtain more spectra, so that the spatial resolution of imaging is reduced, and the manufacturing difficulty and cost are increased. This patent effectively utilizes the time dimension, makes a dynamic filter can possess the spectral characteristic of a plurality of different static filters respectively at different moments, and the means that will improve frequency domain spectral resolution turns into from increasing filter quantity and increases the measurement number of times (refracting index change number of times), has realized the compression of filter quantity, lets obtain outstanding spectrum frequency domain resolution simultaneously and forms images spatial resolution and becomes possible.
Compared with a metal nano structure, the invention uses the dielectric nano material as the resonance unit of the array structure, avoids the inherent metal internal loss, can obtain the reflection spectrum with high reflectivity and narrow half-peak width, and can flexibly adjust the resonance characteristic in a visible light wave band by changing the shape, the geometric parameters and the array period of the nano structure, and the principle schematic diagram is shown in fig. 2 and fig. 3. Therefore, the filter with high efficiency, high resolution, low cost and small volume is designed.
The invention has the following beneficial effects:
the vertical stacking of the CMOS array and the super-structure surface filter can realize the miniaturization of the integration of the multispectral imaging chip, and the performance (spectral resolution, filtering efficiency and the like) of the filter realized by utilizing the super-structure surface is more excellent. In addition, different from the static filter plate commonly used, the dynamic filter plate can collect optical signals with different frequencies at different moments, and then the optical signals are calculated and synthesized to obtain higher spectral resolution, so that the requirement of the filter plate on the spatial distribution quantity is greatly reduced, and the contradiction that the high spatial resolution and the high frequency domain resolution of the multispectral imager cannot be obtained simultaneously is alleviated.
In the present invention, the refractive index changeable material may include other means (such as light-induced change, thermal change, micro flow channel, etc.) for changing the environmental refractive index besides using liquid crystal and common phase change material.
Drawings
Fig. 1 is a schematic structural diagram of a time-domain spectroscopic imaging chip.
FIG. 2 is a schematic diagram of a time-domain spectroscopic imaging chip.
FIG. 3 is a schematic diagram of a spectrum principle of a time-domain spectroscopic imaging chip.
Detailed Description
The specific implementation method can be summarized as follows: after being irradiated by light (which can be daily irradiation or specific irradiation), an object enters a time-domain spectral imaging chip, and the chip acquires light intensity data I1 at the moment from a CMOS part (at the moment, I1 is a data set and refers to light intensity data acquired by all pixels on the chip at the moment). By regulating and controlling the refractive index variable layer and changing the environment refractive index, the filtering parameters of the filter in the chip can be changed, thereby obtaining the light intensity data I2Again, by changing several times, the light intensity data I is obtained1.23.4 …, after the data set meeting the requirements is collected, the spectrum collection function can be realized by collecting and processing data at the PC and the host, and the spectrum imaging function is finally realized by combining the imaging function of the CMOS.
The specific scheme is as follows: each group of array pixels consists of M multiplied by M filtering pixels, the 1 st to M2-1 st filtering pixels consist of medium nano array structures with different geometric shapes and geometric parameters, each pixel can also change the refractive index for N times at different moments, corresponds to different reflection spectrum characteristics and covers the whole arrayThe wavelength of the reflection peak in the visible light band is recorded as lambdam,n(M is the pixel number, n is the index sequence), the M2 th pixel will not be structured as a reference pixel for receiving the unfiltered optical signal. During the spectral measurement, the incident light passes through the filter and is recorded by the CMOS photodetector, and the light signals received by the 1 st to M2-1 st pixels under the refractive index at the nth moment are marked as I (I)1,n、I2,n......Im2-1,n) The optical signal received by the reference pixel is IoFrom the subscript n, it is seen that the number of optical signals finally used for spectrum reconstruction is linear with the detection times (number of moments), i.e. the frequency domain resolution of the final spectrum can be continuously improved as the total detection time length is increased. As the filter plate belongs to the reflection type filter plate, the light intensity signal acquired by the CMOS is a polychromatic light intensity signal, and the spectral response curve of the appointed monochromatic light can be obtained by subtracting each filter pixel from the unfiltered reference pixel and is marked as I '(I'1,n、I’2,n……I’m2-1,n) And combining the preset reflection spectrum of each pixel, and obtaining the incident light reconstruction spectrum of each imaging pixel in a multivariate matrix calculation mode. I intensity signal intensity, subscripts M and N mainly represent the serial number and timing of the pixel. I' refers to the intensity of light obtained after pixel calculation.
Claims (6)
1. Time domain spectral imaging chip based on super structure surface, its characterized in that: the device comprises a CMOS image processor (1), a super-structure surface substrate (2), an ITO conductive layer I (3), a dynamic super-structure surface structure (4) and an ITO conductive layer II (5) in sequence; the super-structure surface base (2) is a quartz substrate with high transmittance, and the ITO conductive layer I is ITO deposited on the quartz substrate at hundred nanometer level and acts as a conductive layer and a fixed layer; the dynamic nanostructured surface structure is composed of two parts: the first part is a super-structure surface structure and consists of an array structure with a sub-wavelength scale, the material is a full dielectric medium such as titanium dioxide, unit structure parameters, shapes and periods are used for regulating and controlling spectral performance, and the second part is a refractive index variable layer made of a liquid crystal material; and combining the super-structure surface with the liquid crystal layer through a liquid crystal packaging process to form a dynamic super-structure surface structure.
2. The chip of claim 1, wherein: the basic structure and the material of the ITO conducting layer II are the same as those of the ITO conducting layer I (3), and the ITO conducting layer II is used for conducting electricity and separating a fixed layer and a spacing layer.
3. The chip of claim 1, wherein: the super-structured surface is a novel super-flat, ultra-thin and ultra-light optical element composed of sub-wavelength scale structures; by taking the Mie's resonance theory as a guiding theory, the dielectric nano structure can excite stronger dipole resonance in a visible light wave band range, a strong scattering phenomenon depending on the wavelength can be generated under the resonance interaction of an electric dipole and a magnetic dipole, and the resonance wavelength is influenced by the refractive index of the structure and the surrounding environment; the resonance frequency can be changed by changing the refractive index of the structure or the environmental refractive index, and the position of a reflection peak in a frequency spectrum is changed; the dielectric nano structure with the sub-wavelength scale is combined with the Mie's theory, and then a visible light filter with a very small volume is obtained to be used as a light splitting element of the spectral imaging chip.
4. The chip of claim 1, wherein: the dielectric nano material is used as a resonance unit of the array structure, inherent metal internal loss is avoided, a reflection spectrum with high reflectivity and narrow half-peak width is obtained, and the resonance characteristic is flexibly adjusted in a visible light wave band by changing the shape, the geometric parameters and the array period of the nano structure.
5. The chip of claim 1, wherein: after being irradiated by light, the object enters a time domain spectral imaging chip, and the chip acquires light intensity data I from the CMOS part at the moment1At this time I1The data set refers to the light intensity data obtained by all pixels on the chip at the moment; by passingThe refractive index variable layer is regulated and controlled, the environmental refractive index is changed, and the filtering parameters of the filter in the chip can be changed, so that light intensity data I can be obtained2Again, by changing several times, the light intensity data I is obtained1.23.4 …, after the data set meeting the requirements is collected, the spectrum collection function can be realized by collecting and processing data at the PC and the host, and the spectrum imaging function is finally realized by combining the imaging function of the CMOS.
6. The chip of claim 5, wherein: each group of array pixels consists of M multiplied by M filtering pixels, the 1 st to M2-1 st filtering pixels consist of medium nano array structures with different geometric shapes and geometric parameters, each pixel can also change the refractive index for N times at different moments, corresponds to different reflection spectrum characteristics, covers the whole visible light wave band, and the reflection peak wavelength is recorded as lambdam,nM is the pixel number, n is the refractive index sequence, the M2 th pixel will not be structured as a reference pixel for receiving the unfiltered optical signal; during the spectral measurement, the incident light passes through the filter and is recorded by the CMOS photodetector, and the light signals received by the 1 st to M2-1 st pixels under the refractive index at the nth moment are marked as I (I)1,n、I2,n......Im2-1,n) The optical signal received by the reference pixel is IoAs shown by the subscript n, the number of the optical signals finally used for spectrum reconstruction and the detection times are in a linear relationship, that is, the frequency domain resolution of the final spectrum can be continuously improved along with the increase of the total detection time; as the filter plate belongs to the reflection type filter plate, the light intensity signal acquired by the CMOS is a polychromatic light intensity signal, and the spectral response curve of the appointed monochromatic light can be obtained by subtracting each filter pixel from the unfiltered reference pixel and is marked as I '(I'1,n、I’2,n……I’m2-1,n) Combining the preset reflection spectrum of each pixel, and obtaining the incident light reconstruction spectrum of each imaging pixel in a multivariate matrix calculation mode; i, the intensity of the light intensity signal, subscripts M and N mainly represent the serial number and the time sequence of the pixel; i' refers to the intensity of light obtained after pixel calculation.
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| CN115174794A (en) * | 2022-08-11 | 2022-10-11 | 哈尔滨工业大学（深圳） | Double-light fusion imaging chip and double-light image fusion processing method |
| CN115174794B (en) * | 2022-08-11 | 2023-09-22 | 哈尔滨工业大学（深圳） | Double-light fusion imaging chip and double-light picture fusion processing method |
| CN115793342A (en) * | 2022-12-07 | 2023-03-14 | 西北工业大学宁波研究院 | All-solid-state multi-channel dynamically adjustable spectral filter and preparation method thereof |
| CN115793342B (en) * | 2022-12-07 | 2024-03-26 | 西北工业大学宁波研究院 | All-solid-state multichannel dynamic adjustable spectrum filter device and preparation method thereof |
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