CN113683413B - Millimeter wave dielectric ceramic - Google Patents
Millimeter wave dielectric ceramic Download PDFInfo
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- CN113683413B CN113683413B CN202110942470.XA CN202110942470A CN113683413B CN 113683413 B CN113683413 B CN 113683413B CN 202110942470 A CN202110942470 A CN 202110942470A CN 113683413 B CN113683413 B CN 113683413B
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Abstract
The invention provides a millimeter wave dielectric ceramic, the general expression of the formula is as follows: xHfO 2 ·yTiO 2 ·zSiO 2 . Wherein x is more than or equal to 75.0mol% and less than or equal to 97.0mol%, and x is more than or equal to 3.0mol% and less than or equal to 97.0mol%y is less than or equal to 25.0mol percent, z is more than or equal to 0mol percent and less than or equal to 5.0mol percent, and x + y + z is 100 percent. The dielectric constant of the millimeter wave dielectric ceramic provided by the invention is 10-20, the Q value is as high as 5,000-9,000 (at 30GHz), and the ceramic has a near-zero resonant frequency temperature coefficient. The millimeter wave dielectric ceramic provided by the invention can enable microwave components such as dielectric resonators, filters and the like to be suitable for millimeter wave application, and is expected to solve the problem of key materials for future mobile communication. Therefore, the present invention is of great value in industry.
Description
Technical Field
The invention relates to the field of millimeter wave communication, in particular to millimeter wave dielectric ceramics for a resonator and a filter.
Background
In recent years, with the rapid development of mobile communication and satellite communication technologies, there has been an increasing demand for microwave dielectric ceramics for microwave components such as dielectric resonators and filters. With the rapid development of mobile communication to millimeter wave band, the requirements for low dielectric constant and ultra-low loss millimeter wave dielectric ceramics are urgent. The basic performance requirements are as follows: dielectric constant ε r Less than or equal to 20, quality factor Q equal to 5,000GHz (at millimeter wave frequency), and temperature coefficient of resonance frequency tau f ＝0±10ppm/℃。
Although the existing Ba-based composite perovskite ceramics have ultra-low loss and near-zero temperature coefficient of its frequency, their dielectric constants are too high (>20) And the requirement of millimeter wave application cannot be met. MgAl 2 O 4 ,、Mg 2 SiO 4 、Zn 2 SiO 4 Ceramics and the like have problems that the temperature coefficient of the resonance frequency is too large and the Q value is difficult to control.
On the basis of comprehensively inspecting the existing microwave dielectric ceramic system, the invention finally finds out a new formula of the low-dielectric-constant and ultra-low-loss millimeter wave dielectric ceramic by focusing on the hafnium oxide based solid solution.
Disclosure of Invention
The general expression of the formula of the millimeter wave ceramic provided by the invention is as follows: xHfO 2 ·yTiO 2 ·zSiO 2 . Wherein x is more than or equal to 75.0mol% and less than or equal to 97.0mol%, y is more than or equal to 1.0 mol% and less than or equal to 25.0mol%, z is more than or equal to 0mol% and less than or equal to 3.0mol%, and x + y + z is 100%.
The millimeter wave dielectric ceramic in the formula has x being 0.9, y being 0.09 and z being 0.01.
The millimeter wave dielectric ceramic with the formula has the characteristics of low dielectric constant (10-20), ultra-low loss (Q ═ 5,000-9,000 at 30GHz) and good temperature stability, is used as a key material of a resonator and a filter, and is suitable for the field of millimeter wave communication.
The invention has the advantages of
1. The existing Ba-based composite perovskite ceramics and the like have ultralow loss and near-zero temperature coefficient of the fidelity frequency, but the dielectric constant is too large (>20), so that the requirements of millimeter wave application cannot be met. The dielectric ceramic provided by the invention has the characteristic of low dielectric constant (less than or equal to 20) and is suitable for millimeter wave application.
2、MgAl 2 O 4 ,、Mg 2 SiO 4 、Zn 2 SiO 4 Ceramics and the like have problems that the temperature coefficient of the resonance frequency is too large and the Q value is difficult to control. The dielectric ceramic provided by the invention has the characteristics of ultra-low loss (Q is 5,000-9,000 at 30GHz) and good temperature stability, and can provide a key base material for future millimeter wave communication
3. The millimeter wave dielectric ceramic provided by the invention is a hafnium oxide-based solid solution, and has good compatibility with semiconductor materials such as silicon and the like.
4、HfO 2 Small ionic polarizability, resulting in a low dielectric constant. But simple HfO 2 The microwave performance is not good, so that the microwave is in contact with TiO 2 After the solid solution is formed, the non-simple harmonic vibration can be effectively reduced, so that the dielectric loss of the material is obviously reduced. At the same time, due to TiO 2 Has a positive temperature coefficient of resonance frequency, and HfO 2 The negative resonant frequency temperature coefficients cancel each other out, thereby facilitating obtaining the near-field resonant frequency temperature coefficient. Adding SiO 2 The purpose of the composition is to further reduce the temperature coefficient of the resonance frequency and improve the ceramic densification characteristics.
Detailed Description
Firstly, HfO with a purity of 99.9% or more is introduced 2 、TiO 2 With SiO 2 Mixing at a certain ratio by wet ball milling for 24 hr (solvent is absolute ethanol), adding binder, granulating, and molding under uniaxial pressure at 1000kg/cm 2 Preparing a ceramic blank with the diameter of 6mm and the thickness of 3-6mm under the pressure of (1), and finally sintering the ceramic blank for 3 hours at 1375-1450 ℃ in atmospheric atmosphere to prepare the required ceramicThe millimeter wave dielectric ceramic of (1).
The dielectric properties of millimeter waves were evaluated at 30GHz by a high-order mode cylindrical dielectric resonator method.
The relationship between the millimeter wave dielectric properties and the composition of the materials in the examples is shown in table 1. As can be seen from Table 1, in the ceramic system of the present invention, TiO is accompanied by TiO 2 The content is increased, the dielectric constant of the material tends to increase, and tau f Moving towards positive values, while the Q increases significantly first, then decreases slightly. In the formulation of all the components of this example, HfO 2 ＝90.0mol％，TiO 2 ＝9.0mol％,SiO 2 The formula of 1.0 mol% has the best millimeter wave dielectric property: epsilon r 15, Q8,000 at 30GHz,. tau f ＝-3.5ppm/℃。
TABLE 1 relationship between millimeter wave dielectric properties and composition
Claims (3)
1. The millimeter wave dielectric ceramic is characterized in that the formula is as follows: xHfO 2 • yTiO 2 •zSiO 2 (ii) a Wherein x is more than or equal to 75.0mol% and less than or equal to 97.0mol%, y is more than or equal to 3.0mol% and less than or equal to 25.0mol%, z is less than or equal to 5.0mol% in 0mol%, and x + y + z = 100%.
2. The millimeter wave dielectric ceramic of claim 1, wherein x =0.9, y =0.09, and z = 0.01.
3. The millimeter wave dielectric ceramic according to claim 1 or 2, wherein the ceramic is used as a key material for millimeter wave resonators and filters in the field of millimeter wave communication.
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| CN202110942470.XA CN113683413B (en) | 2021-08-17 | 2021-08-17 | Millimeter wave dielectric ceramic |
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| CN202110942470.XA CN113683413B (en) | 2021-08-17 | 2021-08-17 | Millimeter wave dielectric ceramic |
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| CN113683413A CN113683413A (en) | 2021-11-23 |
| CN113683413B true CN113683413B (en) | 2022-07-26 |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3938064A (en) * | 1973-09-04 | 1976-02-10 | Bell Telephone Laboratories, Incorporated | Devices using low loss dielectric material |
| TWI240288B (en) * | 2003-01-31 | 2005-09-21 | Murata Manufacturing Co | Dielectric ceramic and the manufacturing method thereof, and the laminated ceramic condenser |
| CN1317226C (en) * | 2005-09-09 | 2007-05-23 | 华中科技大学 | Low dielectric constant microwave dielectric ceramic material |
| CN111430228B (en) * | 2020-04-26 | 2023-03-28 | 上海师范大学 | Preparation method of dielectric film with ultrahigh dielectric constant |
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