CN113671719A - Super-structure lens array device - Google Patents
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- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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- G—PHYSICS
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Abstract
The invention discloses a super-structure lens array device, wherein a circuit board, a photosensitive element, OCA optical cement, a super-structure surface, indium tin oxide and a silicon oxide transparent substrate of a CMOS image processor are sequentially connected in a way of depending on the adhesion force among molecules, and the connection mode is not provided with a connection structure except OCA optical cement 3. The super-structure surface is a dielectric nano-structure array. The invention can realize the polarization detection of full Stokes, and the super-structured lens can simultaneously obtain the intensities of four polarizations and can be used as a Hardman sensor. The four-focus lens array can be used for carrying out different polarized light field imaging, and embodies the advantage of multiple functions. The invention designs the imaging distance of the lens made on the surface of the super-structure as the sum of the thickness of the glue and the distance between the CMOS packaging layer and the photosensitive chip, can directly integrate the surface of the super-structure on the CMOS photosensitive chip, and the CMOS can directly extract the light intensity information, thereby greatly reducing the space volume of the system and embodying the characteristic of super-compactness.
Description
Technical Field
The invention relates to a super-structure lens array device, and belongs to the field of nano optics.
Background
The traditional polarization imaging system and the light field imaging system are separated, the optical system is often complex, the processing precision requirement is high, the processing is difficult, and the device is difficult to integrate due to the heavy volume. With the development of intelligent devices, various devices of optical systems are developed in the direction of miniaturization, integration, multifunction and high performance. In recent years, a super-structure surface formed by arranging structures with sub-wavelength sizes and intervals in a two-dimensional plane is proposed to regulate and control electromagnetic wave parameters, the super-structure surface can realize the random regulation and control of all parameters of phase, amplitude, polarization and frequency of light by reasonably designing the shape, size, position and direction of the structures, and the characteristics of ultra-thin and ultra-flat super-structure surface are added, so that the traditional optical element is redesigned into a novel element with light weight, thinness and multiple functions, and a new scheme is expected to be provided for reducing the complexity of an optical system.
At present, researchers at home and abroad explore polarization imaging of a super-structured surface, wherein circularly polarized light is realized by using the conjugate characteristic of a geometric phase, linearly polarized light is detected by using an anisotropic propagation phase, and polarization measurement of a full stokes parameter is realized by using the two phases. However, in the current research, the polarization detection and imaging both use the super-structured surface as a single element, and still need a larger spatial light path, and do not embody the ultra-thin characteristic. In addition, the current polarization detection imaging function is single, and extra information cannot be obtained. In fact, one of the main advantages of the super-structured surface is the sub-wavelength regulation and control of polarization, and by utilizing the characteristic, the super-structured surface can be designed into imaging of a full stokes polarization channel, and can be designed into a more complex lens array for optical field imaging, so that more object information can be obtained.
Disclosure of Invention
The invention provides a polarization detection and polarized light field integrated imaging device based on a super-structure surface and an implementation method.
The device is formed by integrating a super-structure surface consisting of a transparent dielectric medium substrate and a dielectric medium nano-pillar structure array with a CMOS (complementary metal oxide semiconductor) photosensitive device. The device relies primarily on the design and fabrication of the superstructure surface. The super-structure surface is a super-structure lens array used for light field imaging, and each super-structure lens is provided with four focuses in the transverse direction and is respectively sensitive to four kinds of polarized light for polarization detection and imaging. And integrating the designed and manufactured super-structure surface with a CMOS photosensitive chip, and processing by a CMOS processor to obtain the effects of polarization detection and polarization light field imaging.
The invention aims to provide a device for polarization detection and polarized light field integrated imaging based on a super-structure surface and an implementation method.
A super-structure lens array device is characterized in that a circuit board 1 of a CMOS image processor, a photosensitive element 2, OCA optical cement 3, a super-structure surface 4, indium tin oxide 5 and a silicon oxide transparent substrate 6 are sequentially connected in a mode of depending on adhesion force among molecules, and the OCA optical cement 3 is not connected with a structure. The nanostructured surface 4 is a dielectric nanostructure array.
Furthermore, the type of the CMOS image processor used for the circuit board 1 and the photosensitive element 2 of the CMOS image processor is not limited, and the DMM 27UJ003-ML camera image processor of thorlab corporation is used in the experiment, and the pixel size is 1.67 μm, and the number of pixels is 3856 × 2764.
Furthermore, the OCA optical adhesive 3 is a resistance type double-sided adhesive tape with the thickness of 50 μm and the light transmittance of more than 99%.
Further, the textured material and dimensions of the textured surface 4 are described below, and the dimensions are made in accordance with the CMOS image processor to cover the photosensitive areas of the CMOS image processor.
Further, indium tin oxide 5 is a transparent electrode material. The thickness is tens of nm.
Further, the silicon oxide transparent substrate 6 is made as large as the CMOS packaging glass with a thickness of 300 μm.
The technical scheme mainly comprises two parts: the specific flow of the design method and the manufacturing and integration method of the super-structure surface and the CMOS image processor is shown in FIG. 1.
A method for realizing a super-structure surface design and a polarization multichannel comprises the following steps: rectangular, elliptical or other anisotropic shapes are chosen as the cross-section of the nanopillars for linear polarization sensitivity. And simulating the phase change of the nano-column with a certain height and the sizes of the long axis and the short axis within the range of 20nm to 500nm under the incident light with specific wavelength by using computer FDTD software so as to establish a database. The phase required in the design is the phase of the polarization direction of incident light, while the phase in the other direction adopts a random phase, and then the direction of the axis of the nano-column containing the designed phase is always consistent with the polarization direction, so that the nano-column realizes the single polarization sensitive function. For circularly polarized light, a geometric phase, namely a nanostructure with the function of a half-wave plate is adopted, and twice of the angle is the designed phase.
The design of a super-structure surface and the implementation method of polarization and light field integrated imaging are as follows: for polarization imaging and measurement of the full stokes parameter, four polarization channels were selected: the four nano structures corresponding to the four polarizations are combined into a pixel unit through linearly polarized light and left circularly polarized light channels in the horizontal direction, the vertical direction and the 45-degree direction, the required structure is calculated and placed according to the position of each pixel unit to form a four-focus ultra-structured lens, and then N × N arrays are carried out to finally obtain the ultra-structured surface.
The device manufacturing method comprises the following steps: selecting a transparent dielectric substrate (without an ITO layer) with an indium tin oxide transparent electrode ITO deposited on the surface, then spin-coating polymethyl methacrylate on the substrate, heating and drying, exposing by using electron beams, and then developing and fixing to obtain the designed structural pattern. Then depositing dielectric material by using atomic layer deposition technology to fill the obtained pattern, etching off the deposited higher layer by using ion beams, and removing the residual polymethyl methacrylate by using a chemical method to obtain the final super-structured surface. And (3) facing the side with the structure on the surface of the super-structure to the CMOS photosensitive chip, and adhering the surface of the super-structure to the CMOS photosensitive chip by using optical glue to obtain the device.
Optionally, the material of the nano-pillar structure of the dielectric nano-structure array comprises TiO2、HfO2、ZrO2、GaN、Si2N3Si, GaAs, ZnS or AlN.
Optionally, the height range of the nanorod structures of the dielectric nanostructure array is 200nm to 1500nm, the size of the nanorod structures on the surface of the dielectric substrate is 20nm to 1000nm, and the nanorod structures are randomly arranged on the surface of the dielectric substrate.
The ultra-compact polarization and light field integrated imaging camera provided by the invention integrates the array of the super-structure lens and the CMOS, can simultaneously realize three functions of polarization detection, polarization imaging and light field imaging of full Stokes, and has the advantages of ultra-compact structure, high integration level, multiple functions and the like. Compared with the existing polarization camera and light field camera, the polarization imaging system has the advantages of high integration level, multiple functions, easiness in processing and the like, and can simultaneously realize three functions of polarization detection, polarization imaging and light field imaging. TIABC ═ (four focal points OR four polarization channels) AND TIAB ═ i (a superstructured lens OR supersurface OR metamaterial surface).
Compared with the prior art, the invention has the following advantages and effects:
1. the invention can realize the polarization detection of full Stokes, and the super-structured lens can simultaneously obtain the intensities of four polarizations and can be used as a Hardman sensor.
2. The four-focus lens array can be used for carrying out different polarized light field imaging, and embodies the advantage of multiple functions.
3. The invention designs the imaging distance of the lens made on the surface of the super-structure as the sum of the thickness of the glue and the distance between the CMOS packaging layer and the photosensitive chip, can directly integrate the surface of the super-structure on the CMOS photosensitive chip, and the CMOS can directly extract the light intensity information, thereby greatly reducing the space volume of the system and embodying the characteristic of super-compactness.
Drawings
FIG. 1 is a flow chart of the method of the present invention.
Fig. 2 is a composition schematic diagram of a multifunctional tunable micro-nano integrated device based on a super-structured surface.
FIG. 3 is a schematic view of an arrangement of a microstructured surface.
FIG. 4 is a schematic diagram of the operation of a super-structured lens array
FIG. 5 is a view of the focal point of the super-structured lens, which is a polarized light and a polarized light with 0 degree, respectively; b. 90-degree polarized light; c. 135 degree polarized light; d. right-hand polarized light.
Detailed Description
In order to make the principle and advantages of the scheme of the invention more clear, the invention is further explained in detail by taking the case of simply designing the nano-pillar ultrastructural surface with a rectangular cross section. It is to be understood that the description herein is intended to illustrate and not to limit the invention.
Fig. 2 is a composition schematic diagram of the multifunctional tunable micro-nano integrated device based on the super-structured surface. The CMOS camera comprises a CMOS camera circuit board 1, a CMOS photosensitive element 2, an optical adhesive 3, an electric dielectric nano-column super-structure surface layer 4, an ITO (optional) layer 5 for conducting electricity to prevent electron beam deflection during exposure, and a top transparent dielectric substrate 6.
FIG. 3 is a schematic view of an arrangement of the super-structured surface structures. The left diagram shows that the nanostructured surface is composed of N × N square units, each unit is composed of a four-focus metamaterial lens, each focus is different polarized light as shown by arrows in the diagram, the focus respectively represents linearly polarized light and left circularly polarized light in the horizontal direction, the vertical direction and the 45-degree direction, the middle diagram shows a schematic diagram of arrangement of nano-structures, nano-columns are arranged in unit cells with periodic sizes, each unit is composed of four nano-columns, the sizes and angles of the nano-columns are different, and the four structures are respectively sensitive to four kinds of polarization. The right panel is a schematic diagram of a single nanostructure of the nanostructured surface.
Fig. 4 is a schematic diagram of the functional implementation of the present invention. Each of the lenses acts to focus the beam, wherein the phase distribution of the lenses is given by the formula:
wherein λ is the wavelength of light, r is the distance between the position of the nanopillar on the lens and the center, f is the focal length of each lens,
that is, the phase retardation formed by the nano-pillars, the generated phase is wavelength dependent, and C is a constant.
Each nano-pillar structure is regarded as a linear birefringent unit, incident light and emergent light are converted through a Jones matrix, and the nano-pillar structure with the in-plane angle theta can be expressed by the Jones matrix:
wherein theta is the included angle between the long axis direction of the nano-column and the vibration plane direction of the polarized light, phixAnd phiyThe phase delays of the incident light along the long axis and the short axis of the nanostructure, i.e. the phase values in two directions at different sizes in the database, T, respectively0Is a jones matrix with angle theta being zero and R (theta) is a rotation matrix.
For linearly polarized light, the required phase retardation can be obtained by the size of the structure as long as the direction angle of the structure is consistent with the direction angle of the linearly polarized light, that is, no rotation matrix is provided.
For circularly polarized light, an additional phase related to the in-plane angle theta of the nano-pillar structure is generated, and the expression of an emergent field is deduced as follows:
wherein EiAnd EoRespectively representing incident electric fieldsAnd an emergent electric field, e is a natural index, i represents an imaginary part in a complex number, and is a common expression mode for converting the trigonometric function expression of the light wave into a complex exponential form in physical optics. Where ± corresponds to left-handed circularly polarized light and right-handed circularly polarized light, respectively, where the first term on the right side represents a circularly polarized beam having the same handedness as the incident light and the second term represents a circularly polarized beam having the opposite handedness, the additional geometric phase being 2 θ, explaining that twice the aforementioned intermediate structure angle is the resulting phase. Therefore, the size of the nano-pillar structure is kept unchanged, the in-plane angle is rotated from 0 degrees to 180 degrees, and the phase of the emergent light can cover the range of 0-2 pi.
The design, fabrication and functional principles of the superstructure surface are introduced above, with the following integration method: the optical cement is cut into a square ring shape, the middle space is reserved for the nanostructure of the super-structure surface, one function of the optical cement is to integrate the super-structure surface with the CMOS photosensitive chip, and the other function is to control the distance between the super-structure surface and the photosensitive chip, namely b in figure 4.
Example 1 Hardmann sensor
For the polarization detection function, i.e. obtaining the light intensities of the four polarization components in the foregoing, the size of b in fig. 4 is close to f, because the polarization detection is to obtain four parameters of the polarization stokes, the expression of the parameters is:
and the expression for obtaining the light intensity information is as follows:
wherein I is the light intensity, δ is the phase difference between light in two orthogonal directions, the polarization state can be calculated by simple linear transformation, and the distribution of several common polarized lights can be obtained according to the distribution of the focal spot of the lens, as shown in fig. 5. The four focuses of the super-structured lens are respectively sensitive to four kinds of polarized light, the four focuses of the super-structured lens are respectively 0-degree polarized light, 90-degree polarized light, 45-degree polarized light and left-hand polarized light from left to right and from top to bottom, when the polarized light of the orthogonal component of the super-structured lens is incident, the corresponding positions of the focuses do not appear, in addition, the positions of the focuses can reflect the phase of the incident light, and the simultaneous detection of the polarization state and the phase is realized according to the use method of the Hardman sensor.
Example 2 polarized light field Camera
The focal length f in fig. 4 is then close to the distance between them, depending on the designed image size. The image size depends on the object distance a and the image distance b, and the imaging formula is as follows:
the image size of the final obtained image is different, so that the imaging of objects with different depths can be selected by selecting the sub image blocks with different sizes on the CMOS photosensitive chip. In order to obtain the light field information and ensure that the sub-images are not overlapped, the image is reduced by more than two times, namely a is more than two times of b, the relation between f and b can be obtained aiming at the common Keplerian and Galileo imaging modes,
f/2< b < f or f < b <3f/2
The light intensity information is acquired by the photosensitive chip, image blocks corresponding to different polarized lights are selected, and images of light fields of the different polarized lights can be obtained by correcting, reconstructing and rendering the images by a computer.
Claims (9)
1. A super-structured lens array device, characterized in that: the circuit board, the photosensitive element, the OCA optical cement, the super-structure surface, the indium tin oxide and the silicon oxide transparent substrate of the CMOS image processor are sequentially connected in a way of depending on the adhesion force among molecules except that the OCA optical cement has no connection structure; the super-structure surface is a dielectric nano-structure array.
2. A superstructured lens array device according to claim 1, wherein: the OCA optical adhesive is a resistance type double-sided adhesive with the thickness of 50 mu m and the light transmittance of more than 99 percent.
3. A superstructured lens array device according to claim 1, wherein: the dimensions of the super-structured surface are made according to the CMOS image processor to cover the photosensitive area of the CMOS image processor.
4. A superstructured lens array device according to claim 1, wherein: indium tin oxide is a transparent electrode material.
5. A superstructured lens array device according to claim 1, wherein: the silicon oxide transparent substrate is manufactured to have the same external dimension as the CMOS packaging glass and the thickness of 300 microns.
6. A superstructured lens array device according to claim 1, wherein: the design method of the super-structure surface and the manufacturing and integration method with the CMOS image processor comprise the following specific flows:
a method for realizing a super-structure surface design and a polarization multichannel comprises the following steps: selecting a rectangular, elliptical or other anisotropic shape as the cross section of the nano-pillar for realizing linear polarization sensitivity; simulating the phase change of the nano-column with a certain height and the sizes of the long axis and the short axis in a certain range under the incident light with specific wavelength by using computer FDTD software, thereby establishing a database; the phase required in the design is the phase of the polarization direction of incident light, while the phase in the other direction adopts a random phase, and then the direction of the axis of the nano-column containing the designed phase is always consistent with the polarization direction, so that the nano-column realizes the single polarization sensitive function; for circularly polarized light, a geometric phase, namely a nanostructure with a half-wave plate function is adopted, and twice of the angle is the designed phase;
the design of a super-structure surface and the implementation method of polarization and light field integrated imaging are as follows: for polarization imaging and measurement of the full stokes parameter, four polarization channels were selected: combining four nano structures corresponding to the four polarizations into a pixel unit through linearly polarized light and left circularly polarized light channels in the horizontal direction, the vertical direction and the 45-degree direction, calculating and placing a required structure according to the position of each pixel unit to form a four-focus ultra-structured lens, and performing N × N arrays to finally obtain an ultra-structured surface;
selecting a transparent dielectric substrate with an indium tin oxide transparent electrode ITO deposited on the surface, spin-coating polymethyl methacrylate on the substrate, heating and drying, exposing by using an electron beam, and then carrying out development and fixation to obtain a designed structural pattern; then depositing a dielectric material by using an atomic layer deposition technology to fill the obtained pattern, etching off a deposited higher layer by using ion beams, and removing the residual polymethyl methacrylate by using a chemical method to obtain a final super-structured surface; and (3) facing the side with the structure on the surface of the super-structure to the CMOS photosensitive chip, and adhering the surface of the super-structure to the CMOS photosensitive chip by using optical glue to obtain the device.
7. A superstructured lens array device according to claim 1, wherein: the material of the nano-pillar structure of the dielectric nano-structure array comprises TiO2、HfO2、ZrO2、GaN、Si2N3Si, GaAs, ZnS or AlN.
8. A superstructured lens array device according to claim 1, wherein: the height range of the nano-column structure of the dielectric nano-structure array is 200nm-1500nm, the size of the nano-column structure on the surface of the dielectric substrate is 20nm-1000nm, and the nano-column structure is randomly arranged on the surface of the dielectric substrate.
9. A superstructured lens array device according to claim 1, wherein: each of the lenses acts to focus the beam, wherein the phase distribution of the lenses is given by the formula:
wherein λ is the wavelength of light, r is the distance between the position of the nanopillar on the lens and the center, f is the focal length of each lens,
namely the phase retardation formed by the nano-pillars, the generated phase is related to the wavelength, and C is a constant;
each nano-pillar structure is regarded as a linear birefringent unit, incident light and emergent light are converted through a Jones matrix, and the nano-pillar structure with the in-plane angle theta is expressed by the Jones matrix:
wherein theta is the included angle between the long axis direction of the nano-column and the vibration plane direction of the polarized light, phixAnd phiyThe phase delays of the incident light along the long axis and the short axis of the nanostructure, i.e. the phase values in two directions at different sizes in the database, T, respectively0A Jones matrix with an angle theta of zero, and R (theta) is a rotation matrix;
for linearly polarized light, the required phase delay can be obtained through the size of the structure as long as the direction angle of the structure is consistent with that of the linearly polarized light, namely no rotation matrix exists;
for circularly polarized light, an additional phase related to the in-plane angle theta of the nano-pillar structure is generated, and the expression of an emergent field is deduced as follows:
wherein EiAnd EoRespectively representing an incident electric field and an emergent electric field, wherein e is a natural index, i represents an imaginary part in a complex number, and is a common expression mode for converting the trigonometric function expression of light waves into a complex index form in physical optics; wherein ± corresponds to left-handed circularly polarized light and right-handed circularly polarized light, respectively, wherein the first term on the right side in the formula represents a circularly polarized light beam having the same handedness as the incident light, the second term represents a circularly polarized light beam having the opposite handedness, the additional geometric phase is 2 θ, explaining that twice the aforementioned intermediate structure angle is the resulting phase; therefore, the size of the nano-pillar structure is kept unchanged, the in-plane angle is rotated from 0 degrees to 180 degrees, and the phase of the emergent light can cover the range of 0-2 pi.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114397754A (en) * | 2021-12-31 | 2022-04-26 | 中山大学 | Design method of high-numerical-aperture super-structured lens and high-numerical-aperture super-structured lens |
| CN114815228A (en) * | 2022-05-16 | 2022-07-29 | 中山大学 | Design and preparation method of high-density image integrated super-structure surface device |
| CN115327677A (en) * | 2022-04-14 | 2022-11-11 | 西北工业大学 | Vector super surface for realizing polarization information encryption and design method |
| WO2023185915A1 (en) * | 2022-04-02 | 2023-10-05 | 维沃移动通信有限公司 | Polarization imaging sensor and electronic apparatus |
| CN117928399A (en) * | 2024-03-22 | 2024-04-26 | 中国空气动力研究与发展中心超高速空气动力研究所 | Coaxial thermocouple insulating layer thickness measuring device and method based on polarized light imaging |
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| CN112188072A (en) * | 2020-10-26 | 2021-01-05 | 湖南大学 | Imaging module |
| CN112505808A (en) * | 2020-12-09 | 2021-03-16 | 华中科技大学 | Long-wave infrared broadband achromatic super-surface lens |
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| CN112188072A (en) * | 2020-10-26 | 2021-01-05 | 湖南大学 | Imaging module |
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| CN114397754A (en) * | 2021-12-31 | 2022-04-26 | 中山大学 | Design method of high-numerical-aperture super-structured lens and high-numerical-aperture super-structured lens |
| CN114397754B (en) * | 2021-12-31 | 2023-06-30 | 中山大学 | Design method of high-numerical-aperture super-structure lens and high-numerical-aperture super-structure lens |
| WO2023185915A1 (en) * | 2022-04-02 | 2023-10-05 | 维沃移动通信有限公司 | Polarization imaging sensor and electronic apparatus |
| CN115327677A (en) * | 2022-04-14 | 2022-11-11 | 西北工业大学 | Vector super surface for realizing polarization information encryption and design method |
| CN115327677B (en) * | 2022-04-14 | 2024-01-30 | 西北工业大学 | Vector super-surface for realizing polarization information encryption and design method |
| CN114815228A (en) * | 2022-05-16 | 2022-07-29 | 中山大学 | Design and preparation method of high-density image integrated super-structure surface device |
| CN114815228B (en) * | 2022-05-16 | 2023-08-08 | 中山大学 | Design and preparation method of high-density image integrated super-structured surface device |
| CN117928399A (en) * | 2024-03-22 | 2024-04-26 | 中国空气动力研究与发展中心超高速空气动力研究所 | Coaxial thermocouple insulating layer thickness measuring device and method based on polarized light imaging |
| CN117928399B (en) * | 2024-03-22 | 2024-05-28 | 中国空气动力研究与发展中心超高速空气动力研究所 | Coaxial thermocouple insulating layer thickness measuring device and method based on polarized light imaging |
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