CN113643950A - Device and method for generating coupled gas cluster ion beam doped with alkali metal or halogen - Google Patents
Device and method for generating coupled gas cluster ion beam doped with alkali metal or halogen Download PDFInfo
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- CN113643950A CN113643950A CN202110866354.4A CN202110866354A CN113643950A CN 113643950 A CN113643950 A CN 113643950A CN 202110866354 A CN202110866354 A CN 202110866354A CN 113643950 A CN113643950 A CN 113643950A
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- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 42
- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 42
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 42
- 229910052736 halogen Inorganic materials 0.000 title claims abstract description 40
- 150000002367 halogens Chemical class 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 13
- 150000002500 ions Chemical class 0.000 claims abstract description 132
- 230000007935 neutral effect Effects 0.000 claims abstract description 25
- 239000000126 substance Substances 0.000 claims description 18
- 238000003860 storage Methods 0.000 claims description 11
- 230000000087 stabilizing effect Effects 0.000 claims description 9
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- -1 halogen anion Chemical class 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000013467 fragmentation Methods 0.000 abstract description 3
- 238000006062 fragmentation reaction Methods 0.000 abstract description 3
- 150000001793 charged compounds Chemical class 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 33
- 125000004429 atom Chemical group 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 150000001450 anions Chemical class 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910025794 LaB6 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000000752 ionisation method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011829 room temperature ionic liquid solvent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001518 atomic anions Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/026—Cluster ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention designs a device for generating a coupled gas cluster ion beam of doping single charge state alkali metal positive ions or halogen negative ions and provides a method for generating the cluster ion beam. The invention aims to generate coupled gas cluster ion beams by doping low-energy single-charge-state alkali metal positive ions or halogen negative ions generated by a surface ionization ion source so as to improve the working efficiency of the device. In the reaction process, the monoatomic ions are used for replacing molecular ions or complex ions, so that the fragmentation phenomenon of doping ions in the doping process is avoided. The present invention forms a coupled gas cluster ion beam by capturing low-energy singly-charged alkali metal positive ions or halogen negative ions through a neutral gas cluster beam composed of a large number of gas atoms (e.g., Ar).
Description
Technical Field
The invention relates to a device and a method for generating coupled gas cluster ion beams doped with alkali metals or halogens, belonging to the fields of cluster ion sources and ion beams and ion beam micro-nano processing.
Background
The cluster consisting of 500-5000 atoms can be doped by compounding alkali metal positive ions or halogen negative ions in a single charge state, and the ion beam of the cluster doped in the way can carry out surface modification, ultrafine polishing and shallow layer injection on various materials (including insulators), and can also carry out layer-by-layer and local microscopic analysis on complex inorganic materials, biological materials and various organisms (including thin films) and be used for exciting chemical reactions on the surfaces of the complex inorganic materials, the biological materials and the organisms.
The state of the art and production processes are capable of producing HCl, H doped with chemically active molecules2O and CH4Coupled argon cluster ion beams. In these devices, gaseous or vaporous reactive dopants are injected into the coupling chamber of the ion source at a partial pressure of 1-5% relative to the argon pressure, where they are embedded in the Ar cluster structure, and the formed coupled clusters are then ionized by an electron beam in an ionizer. The fundamental disadvantage of this solution is that it is not possible to generate negatively charged cluster ions, which is necessary for dielectric material processing (e.g. polishing of glass) and for the analysis of low-conductive organic materials, since the negative charge of the primary ions compensates for the surface discharge of the material surface due to ion-electron emission. Technically, the design of the apparatus becomes more complicated due to the need to add a coupling chamber for introducing the reaction gas, evacuating and controlling the pressure.
The method and the device are known at present, and cations and anions extracted from the room-temperature ionic liquid are doped into clusters, so that coupled gas cluster ion beams with two polarities are formed. From a technical point of view, this device is a gas particle source of a neutral cluster beam of rare gas, behind the exit diaphragm of which a conical ion source with an axial slit is mounted. The ion source operates in a field evaporation mode to generate positive and negative ion beams of room temperature ionic liquid. In the chamber, a neutral cluster of rare gas interacts with the dopant ions and then forms a dopant doped with room temperature ionsRare gas cluster ion beams of cations or anions of the daughter liquid, i.e., coupled cluster ion beams with positive or negative charges. One disadvantage of this prototype is due to the adiabatic expansion (E) of the working gas from the nozzlekin100eV) to form a neutral cluster beam having a significant difference in kinetic energy, and thus the coupled cluster ion beam generation efficiency is low for both polarities. Ions formed by field evaporation of cations or anions in room temperature liquids with sharp edges of a slit ion source (E)kinNot less than 1500 eV). The retardation of these ions causes the ion beam to be defocused, reducing its density and reducing the probability of ions being captured by the neutral gas cluster beam. In addition, the cations and anions of the room temperature liquid are complex ions that may be decomposed when interacting with the neutral cluster beams.
Disclosure of Invention
The invention aims to design and manufacture a gas dynamic source capable of generating alkali metal positive ions or halogen negative ions doped with single charge state coupled cluster ion beams, because the energy of the doped ions is greatly reduced, the working efficiency is higher than that of the existing prototype, and the problem of decomposition does not exist when the monatomic ions are used for doping and interact with neutral cluster beams.
In order to solve the problem, the invention provides a method for generating a coupled gas cluster ion beam doped with alkali metal or halogen, a neutral gas cluster beam formed by a gas power source enters an ionization chamber formed by an ion source, the ion source generates an ion beam formed by alkali metal positive ions or halogen negative ions in a single charge state through surface ionization, the direction of the ion beam is perpendicular to the direction of the neutral gas cluster beam, and the neutral gas cluster beam captures the alkali metal positive ions or the halogen negative ions in a single charge state to form the coupled gas cluster ion beam doped with the alkali metal or the halogen.
And the neutral gas cluster beam is ArnThe size of the cluster is more than or equal to 500 and less than or equal to 5000, and the energy is within the range of 30-300 eV.
And the alkali metal positive ion is Cs+The halogen anion is Br-Or I-。
The device for generating the coupled gas cluster ion beam doped with the alkali metal or the halogen at least comprises an ion source, the ion source comprises a cathode ionizer, a working substance storage tank and a heater from inside to outside, and the cathode ionizer is made of porous tungsten or LaB pressed into porous graphite6The working substance storage tank is heated by a heater to generate alkali metal positive ions or halogen negative ions.
Furthermore, the ion source is in the shape of a hollow cylinder, the hollow part of which forms an ionization chamber.
The ion source can be heated by a heater until working substances are melted, atoms generated by melting the working substances form alkali metal positive ions or halogen negative ions through a cathode ionizer, and the alkali metal positive ions or the halogen negative ions enter the ionization chamber to be coupled with the neutral gas clusters to form coupled gas cluster ions; the outlet of the ionization chamber is provided with an extraction electrode, and the coupled gas cluster ions are extracted by the extraction electrode to form coupled gas cluster ion beams which enter an ion transmission cylinder formed by a diaphragm, a mass separator, a focusing lens, a deflection electrode and the like.
And the working substance stored in the working substance storage tank is CsI or CsBr.
The heater is a resistance heater, the resistance heater is electrically connected with a current stabilizing power supply, and the current stabilizing power supply supplies power to the resistance heater; the resistance heater and the current stabilizing power supply are connected with a stabilized voltage power supply which provides negative high voltage, and the stabilized voltage power supply provides kinetic energy for ions.
The ion source is arranged on a stainless steel carrier, namely a cathode ionizer, a working substance storage tank, a resistance heater and the stainless steel carrier are sequentially arranged from inside to outside, and two ends of the ion source are sealed by graphite diaphragms.
And the interaction region of the inlet and the outlet of the ionization chamber is provided with a permanent magnet, and the interaction region is a region in which alkali metal positive ions or halogen negative ions are coupled with neutral gas clusters.
The technology successfully improves the performance and efficiency of the device by forming the coupled gas cluster ion beam by using low-energy alkali metal positive ions or halogen negative ions with single charge as doping ions, wherein the doping ions are generated by a hollow cylindrical ion source with surface ionization. This geometry provides a high density of dopant ions in the ionization chamber. In addition, monoatomic ions are used instead of molecular ions or complex ions, so that fragmentation of doped ions is eliminated, and the use performance of the ion beam is improved.
Drawings
Fig. 1 is a schematic view of an alkali metal positive ion or halogen negative ion coupled cluster ion beam generating apparatus doped with a single charge state. In the figure: the method comprises the following steps of 1-a gas power source, 2-neutral cluster beam, 3-a beam splitter, 4-a coupling chamber, 5-a cathode ionizer, 6-a working substance storage tank, 7-a resistance heater, 8-a current stabilizing power supply, 9-doped ions, 10-a voltage stabilizing power supply, 11-a grounding electrode, 12-a leading-out electrode, 13-electrons, 14-a permanent magnet and 15-a graphite membrane.
Fig. 2 is a schematic circuit diagram of a resistance heater and a regulated power supply connected to a regulated power supply providing a negative high voltage.
Detailed Description
As shown in FIG. 1, the gas power source 1 is provided with a high-pressure gas flow which can form a neutral cluster beam 2, such as ArnWherein n is more than or equal to 500 and less than or equal to 5000. The gas power source is formed by connecting a conical supersonic nozzle with a high-pressure (5-10bar) gas source. The nozzle made of metal has a bore diameter of 50 to 100 μm, a length of the spouting portion of 30mm, and a taper angle of 5 to 10 degrees. The neutral cluster beam 2 is guided by a beam splitter 3 into an ionization chamber 4 in which a positive alkali metal ion source (e.g., Cs) is installed+) Or a source of halide anions (e.g. Br)-Or I-). The ion source is hollow cylinder type and made of stainless steel as a carrier, the hollow part of the ion source forms an ionization chamber, and two ends of the ion source are sealed by graphite film sheets 15. The ion source comprises a cathode ionizer 5 made of porous tungsten (for generating positive ions) or LaB intercalated in porous graphite6Powder (for generating negative ions). Below the cathode ionizer there is a reservoir 6 filled with a working substance (for example CsI or CsBr). The ion source is composed of a resistorThe heater wire or resistance heater 7 is heated and is powered by a current stabilizing power supply 8. That is, the whole structure of the hollow cylindrical ion source is sequentially provided with a cathode ionizer, a working substance storage tank, a resistance heater and a stainless steel carrier from inside to outside, the ionization chamber is not a structure which is independently arranged or additionally prepared, but the hollow part of the hollow cylindrical ion source can be directly used as the ionization chamber when in actual use, and the ion source shown in fig. 1 has a cross-sectional structure. The vapors of the working substance diffuse through the porous cathode ionizer to the surface where singly charged positive or negative ions 9 are formed according to different modes of operation (polarity on the cathode). The kinetic energy of the ions depends on the acceleration voltage and is controlled by regulated power supply 10. A zero-potential cylindrical electrode 11 (grounding electrode) is made of a tungsten grid with 90% transmittance, and the interaction area of doped ions (namely singly-charged alkali metal positive ions or halogen negative ions) and neutral inert gas beams is controlled. The doped ions in the region are coupled with clusters, and the formed coupled cluster ion beam is led out by an extraction electrode 12 and enters an ion transmission cylinder formed by a diaphragm, a mass separator, a focusing lens, a deflection electrode and the like.
Fig. 2 is a schematic diagram showing a specific circuit in which the resistance heater and the steady-current power supply are connected to a regulated power supply for supplying a negative high voltage, and the resistance heater and the steady-current power supply are connected to the regulated power supply for supplying the negative high voltage, so that the negative ions are accelerated to move toward the center of the ion source under the action of the negative high voltage. The energy of the ion depends on the value of the negative high voltage, so the kinetic energy of the ion is controlled by the stabilized voltage power supply.
In the negative ion generation mode, the cathode ionizer 5 also emits electrons 13. To prevent electrons from entering the interaction region of the inlet and outlet of the ionization chamber, permanent magnets 14 are mounted at these two locations, whose magnetic field causes significant deflection of the electrons, and which do not alter the trajectories of the dopant ions due to the large difference in mass of the electrons and ions.
The coupled cluster ions are formed by: neutral gas cluster beam (e.g., Ar) formed from a gas power sourcen) Entering into an ionization chamber, wherein the size of the cluster is more than or equal to 500 and less than or equal to 5000, and the energy is within the range of 30-300 eV. The ion source is heated to 700 ℃ and 1200 ℃, at which temperature the working species occursMelting (the melting points of CsI and CsBr are 621 ℃ and 636 ℃ respectively), forming positive ions or negative ions by the emitted atoms through a cathode ionizer, and coupling the positive ions or the negative ions with the argon cluster in a coupling chamber to form coupled cluster ions.
To form positively charged alkali metal dopant ions, e.g. having a first ionization energy EiDiffusion of cesium vapor at 3.9eV into work function through porous tungsten powder
The heated surface undergoes a surface ionization process. Degree of ionization alpha under thermal equilibrium conditions+I.e. the number of positive ions n in the same flow of evaporated material+With a neutral number of atoms noThe ratio of (c) can be described by the Saha-Langmuir formula under a first approximation:
wherein g is+、goStatistical weights for formed cation and initial atom (g for monovalent atom in thermodynamic equilibrium), respectively+＝1，go2). At T1000K, ionization degree alpha of cesium atoms on surface of tungsten cathode ionizer+About 500 a. Ionization coefficient beta of cesium atom+I.e. the fraction of cesium atoms that acquire a positive charge (lose electrons), can be described by the following formula:
to form negatively charged halogen dopant ions, e.g. with electron affinity SaIodine vapor of 3.06eV is diffused to LaB of 2.66eV work function by a heated storage device6The surface of a cathode ionizer. As in the case of generating alkali metal positive ions on the surface of the cathode ionizer, a surface ionization process of halogen atoms occurs. The first approximation of the degree of anion ionization can also be described by the Saha-Langmuir formula:
wherein g is-、goStatistical weights for the anion formed and the initial atom (g for a monovalent atom in thermodynamic equilibrium), respectively-＝1，go2). When T is 1000K, LaB6Ionization degree alpha of iodine atoms on surface of cathode ionizer-About 500 a. Ionization coefficient beta of iodine atom-That is, the portion representing the total number of iodine atoms to which a negative charge (electron) is obtained, can be described by the following formula:
thus, in the manner described above, surface ionized atoms of alkali metals or halogens can provide a positive ionization coefficient and a negative ionization coefficient close to 1. In the negative ion generation mode, the cathode ionizer will also emit electrons in the apparatus shown in fig. 1, but the electrons cannot enter the ionization chamber due to the deflection of the magnetic field of the permanent magnet. Because of LaB6Chemically active at high temperatures and can react with stainless steel components, thus isolating the cathode ionizer from the cylindrical stainless steel chamber through the graphite diaphragm.
Positive and negative doped ions accelerated in the space between the cathode ionizer and the grid, having an energy of up to 20keV or more, form chemically active positive or negative cluster ions when interacting with the cluster beam of the working gas. Beta due to ionization coefficient of dopant ions+And beta-(see equations (2) and (4)) is independent of the acceleration voltage that occurs in the field evaporation case, so the operating efficiency of the apparatus of the present invention is higher than that of the prior art apparatus. The device can control the energy of the evaporated ions in a wider range so as to increase the capture section of the neutral gas cluster and reduce the possibility of cluster fragmentation when colliding with the doped ions. The hollow cylindrical structure of the ion source provides high density dopant ions in the ionization chamber, which also enhancesThe working efficiency of the equipment of the invention.
Claims (10)
1. A method of generating an alkali metal or halogen doped coupled gas cluster ion beam, characterized by: the method comprises the following steps that neutral gas cluster beams formed by a gas power source enter an ionization chamber formed by an ion source, the ion source generates ion beams formed by single-charge alkali metal positive ions or halogen negative ions through surface ionization, the direction of the ion beams is perpendicular to the direction of the neutral gas cluster beams, and the neutral gas cluster beams capture the single-charge alkali metal positive ions or the single-charge halogen negative ions to form alkali metal or halogen-doped coupling gas cluster ion beams.
2. The method of generating an alkali metal or halogen doped coupled gas cluster ion beam of claim 1, wherein: neutral gas cluster beam is ArnThe size of the cluster is more than or equal to 500 and less than or equal to 5000, and the energy is within the range of 30-300 eV.
3. The method of generating an alkali metal or halogen doped coupled gas cluster ion beam of claim 1, wherein: the alkali metal positive ion is Cs+The halogen anion is Br-Or I-。
4. An apparatus for generating a coupled gas cluster ion beam doped with an alkali metal or halogen for use in the method of claim 1, wherein: at least comprises an ion source which is sequentially provided with a cathode ionizer, a working substance storage tank and a heater from inside to outside, wherein the cathode ionizer is made of porous tungsten or LaB pressed into porous graphite6The working substance storage tank is heated by a heater to generate alkali metal positive ions or halogen negative ions.
5. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 4, wherein: the ion source is in a hollow cylinder shape, and the hollow part of the ion source forms an ionization chamber.
6. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 5, wherein: the ion source can be heated by a heater until working substances are melted, atoms generated by melting the working substances form alkali metal positive ions or halogen negative ions through a cathode ionizer, and the alkali metal positive ions or the halogen negative ions enter the ionization chamber to be coupled with the neutral gas clusters to form coupled gas cluster ions; the outlet of the ionization chamber is provided with an extraction electrode, and the coupled gas cluster ions are extracted by the extraction electrode to form coupled gas cluster ion beams which enter an ion transmission cylinder formed by a diaphragm, a mass separator, a focusing lens, a deflection electrode and the like.
7. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 5, wherein: the working substance stored in the working substance storage tank is CsI or CsBr.
8. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 5, wherein: the heater is a resistance heater, the resistance heater is electrically connected with a current stabilizing power supply, and the current stabilizing power supply supplies power to the resistance heater; the resistance heater and the current stabilizing power supply are connected with a stabilized voltage power supply which provides negative high voltage, and the stabilized voltage power supply provides kinetic energy for ions.
9. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 5, wherein: the ion source is arranged on a stainless steel carrier, namely a cathode ionizer, a working substance storage tank, a heater and the stainless steel carrier are sequentially arranged from inside to outside, and two ends of the ion source are sealed by graphite diaphragms.
10. The apparatus for generating an alkali metal or halogen doped coupled gas cluster ion beam as claimed in claim 6, wherein: permanent magnets are arranged in interaction areas of an inlet and an outlet of the ionization chamber, and the interaction areas are areas where alkali metal positive ions or halogen negative ions are coupled with neutral gas clusters.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4231325A1 (en) * | 2022-02-16 | 2023-08-23 | Japan Atomic Energy Agency | Negative ion source and negative ion generation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010199036A (en) * | 2009-02-27 | 2010-09-09 | Japan Aviation Electronics Industry Ltd | Generating method of gas cluster ion beam, and processing method of solid surface using its method |
| US20130059444A1 (en) * | 2011-09-01 | 2013-03-07 | Tel Epion, Inc. | Gas cluster ion beam etching process for metal-containing materials |
| CN109786204A (en) * | 2019-01-18 | 2019-05-21 | 东莞亚纳纳米科技有限公司 | A kind of method and ion source for drawing ion beam current using cluster gas sputtering target material |
| CN113178372A (en) * | 2021-04-19 | 2021-07-27 | 江苏集创原子团簇科技研究院有限公司 | Apparatus and method for forming gas cluster ion beam using low pressure source |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010199036A (en) * | 2009-02-27 | 2010-09-09 | Japan Aviation Electronics Industry Ltd | Generating method of gas cluster ion beam, and processing method of solid surface using its method |
| US20130059444A1 (en) * | 2011-09-01 | 2013-03-07 | Tel Epion, Inc. | Gas cluster ion beam etching process for metal-containing materials |
| CN109786204A (en) * | 2019-01-18 | 2019-05-21 | 东莞亚纳纳米科技有限公司 | A kind of method and ion source for drawing ion beam current using cluster gas sputtering target material |
| CN113178372A (en) * | 2021-04-19 | 2021-07-27 | 江苏集创原子团簇科技研究院有限公司 | Apparatus and method for forming gas cluster ion beam using low pressure source |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4231325A1 (en) * | 2022-02-16 | 2023-08-23 | Japan Atomic Energy Agency | Negative ion source and negative ion generation method |
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