CN113638043A - Purging and cooling system, method and device for epitaxial furnace, electronic equipment and storage medium - Google Patents

Purging and cooling system, method and device for epitaxial furnace, electronic equipment and storage medium Download PDF

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Publication number
CN113638043A
CN113638043A CN202110936866.3A CN202110936866A CN113638043A CN 113638043 A CN113638043 A CN 113638043A CN 202110936866 A CN202110936866 A CN 202110936866A CN 113638043 A CN113638043 A CN 113638043A
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cooling
purging
gas
epitaxial wafer
temperature
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CN113638043B (en
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盛飞龙
毛朝斌
罗骞
伍三忠
胡承
王鑫
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Ji Huahengyi Foshan Semiconductor Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the technical field of epitaxial growth, and particularly discloses a purging and cooling system, a purging and cooling method, a purging and cooling device, electronic equipment and a storage medium for an epitaxial furnace, wherein the purging and cooling system comprises: the cooling chamber is used for placing an epitaxial wafer and filled with purging gas for purging and cooling the epitaxial wafer; the gas thermometer is used for acquiring first temperature information of the purge gas; a temperature adjustment mechanism; the temperature detector is used for acquiring second temperature information of the epitaxial wafer; a gas circulation mechanism; the controller is used for controlling the purge gas to circularly flow so as to circularly purge and cool the epitaxial wafer, and controlling the temperature regulating mechanism to regulate the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer; the system controls the temperature adjusting mechanism to adjust the first temperature information of the purging gas according to the second temperature information, and avoids generating plastic deformation and dislocation when the epitaxial wafer is cooled due to the fact that the temperature difference between the purging gas and the epitaxial wafer is too large.

Description

Purging and cooling system, method and device for epitaxial furnace, electronic equipment and storage medium
Technical Field
The application relates to the technical field of epitaxial growth, in particular to a purging and cooling system, a purging and cooling method, a purging and cooling device, electronic equipment and a storage medium for an epitaxial furnace.
Background
Devices made of semiconductor materials are important basic products in the electronic industry and are widely applied to the fields of satellites, rockets, automobiles, communication and the like. The production process of the semiconductor material is complex in working procedure, and an epitaxial process is a key process in the production process of the semiconductor material; at the end of the epitaxial growth process, the epitaxial wafer needs to be placed in a cooling chamber for purging and cooling.
The existing purging cooling mode is generally to continuously send purging gas into a cooling chamber directly to cool the epitaxial wafer, and the cooled epitaxial wafer is taken out at regular time according to the cooling experience. In the purging and cooling mode, the temperature of the purging gas cannot be adjusted according to the current temperature of the epitaxial wafer, and the epitaxial wafer is easy to form thermal contraction and stress due to overlarge temperature difference between the gas and the epitaxial wafer, different crystal lattices and thermal expansion coefficients of the epitaxial wafer and the like, so that the epitaxial wafer is finally subjected to plastic deformation and dislocation, and the quality of the epitaxial wafer is reduced.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the embodiment of the application is to provide a purging and cooling system, a purging and cooling method, a purging and cooling device, electronic equipment and a storage medium for an epitaxial furnace, so that generation of plastic deformation and dislocation during cooling of an epitaxial wafer caused by an overlarge temperature difference between a purging gas and the epitaxial wafer is prevented.
In a first aspect, an embodiment of the present application provides an epitaxial furnace purging and cooling system, configured to purge and cool an epitaxial wafer, the system including:
the cooling chamber is used for placing an epitaxial wafer and filled with purging gas for purging and cooling the epitaxial wafer;
the gas thermometer is used for acquiring first temperature information of the purge gas;
the temperature adjusting mechanism is used for adjusting first temperature information of the purge gas;
the temperature detector is used for acquiring second temperature information of the epitaxial wafer;
the gas circulating mechanism is used for driving the purging gas to circularly flow inside and outside the cooling chamber;
and the controller is used for controlling the purge gas to circularly flow so as to circularly purge and cool the epitaxial wafer, and controlling the temperature regulating mechanism to regulate the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer.
The purging and cooling system for the epitaxial furnace, which is provided by the embodiment of the application, utilizes the controller to control the operation of the gas circulation mechanism, the purge gas circularly flows to circularly purge and cool the epitaxial wafer, the purge gas takes away the heat on the epitaxial wafer in the circulating flow process to cool the epitaxial wafer, the controller controls the temperature adjusting mechanism to adjust the first temperature information of the purge gas according to the second temperature information so as to realize real-time adjustment of the first temperature information, namely, the temperature of the purge gas entering the cooling chamber based on the circulating flow is adjusted according to the temperature of the epitaxial wafer so that the temperature of the purge gas entering the cooling chamber is slightly lower than the temperature of the epitaxial wafer, and sweep the cooling treatment to the epitaxial wafer, produce plastic deformation and dislocation when preventing to sweep the too big epitaxial wafer cooling that leads to of temperature difference between gas and the epitaxial wafer to improve epitaxial wafer output quality.
The purging and cooling system for the epitaxial furnace, wherein the temperature adjusting mechanism comprises:
a heating mechanism for heating the purge gas;
a cooling mechanism for cooling the purge gas;
the controller is used for when first temperature information is higher than the normal atmospheric temperature, according to second temperature information control heating mechanism adjusts the first temperature information of sweeping gas so that the epitaxial wafer cools down gradually, the controller still is used for when first temperature information is less than or equal to the normal atmospheric temperature, according to second temperature information control cooling mechanism adjusts the first temperature information of sweeping gas so that the epitaxial wafer cools down gradually.
The purging and cooling system for the epitaxial furnace is characterized in that the heating mechanism and the cooling mechanism are arranged outside the cooling chamber.
The purging and cooling system for the epitaxial furnace, wherein the system further comprises:
the gas supply mechanism is used for supplying purge gas to the cooling chamber;
the waste gas treatment mechanism is used for treating impurity gas;
the controller is used for controlling the gas supply mechanism to generate purge gas to fill the cooling chamber, and discharging impurity gas in the cooling chamber to the waste gas treatment mechanism for treatment.
The purging and cooling system for the epitaxial furnace is characterized in that the controller stores purging time information, and the controller sets the adjusting range of the temperature adjusting mechanism for adjusting the first temperature information and/or the flow speed of the purging gas driven by the gas circulating mechanism to circularly flow according to the purging time information.
The purging and cooling system for the epitaxial furnace is characterized in that a tower lamp used for reflecting the cooling progress of the epitaxial wafer is arranged on the cooling chamber.
In a second aspect, an embodiment of the present application further provides a purging and cooling method for an epitaxial furnace, which is used for purging and cooling an epitaxial wafer, wherein the epitaxial furnace is provided with a cooling chamber, the cooling chamber is used for placing the epitaxial wafer and is internally filled with a purging gas for purging and cooling the epitaxial wafer, and the purging and cooling method comprises the following steps:
acquiring first temperature information of purge gas;
acquiring second temperature information of the epitaxial wafer;
controlling the circulation flow of a purge gas inside and outside the cooling chamber;
and adjusting the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer.
The purging and cooling method for the epitaxial furnace, disclosed by the embodiment of the application, has the advantages that the purging gas circularly flows to circularly purge and cool the epitaxial wafer, the first temperature information of the purging gas is adjusted according to the second temperature information in the cooling process, so that the temperature of the purging gas entering the cooling chamber can be slightly lower than the temperature of the epitaxial wafer, the purging and cooling treatment is carried out on the epitaxial wafer, the generation of plastic deformation and dislocation when the epitaxial wafer is cooled due to the overlarge temperature difference between the purging gas and the epitaxial wafer is prevented, and the output quality of the epitaxial wafer is improved.
In a third aspect, an embodiment of the present application further provides an epitaxial furnace purging and cooling device, configured to purge and cool an epitaxial wafer, where the cooling chamber is used to place an epitaxial wafer and is internally filled with a purging gas for purging and cooling the epitaxial wafer, and the device includes:
the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring first temperature information of purge gas and second temperature information of an epitaxial wafer;
the circulation module is used for controlling the circulation flow of the purge gas inside and outside the cooling chamber;
and the adjusting module is used for adjusting the first temperature information of the purging gas according to the second temperature information so as to gradually cool the epitaxial wafer.
The utility model provides an epitaxial furnace sweeps cooling device, utilize circulation module control to sweep gaseous circulation flow and circulate to sweep the cooling to the epitaxial wafer, the first temperature information that the module was obtained according to the second temperature information of acquireing the module and adjusted the module regulation and adjust the sweeping gas in the cooling process, the temperature that makes the sweeping gas that gets into in the cooling chamber can be slightly less than the temperature of epitaxial wafer, and sweep the cooling process to the epitaxial wafer, produce plastic deformation and dislocation when preventing to sweep the too big epitaxial wafer cooling that leads to of the temperature difference between gaseous and the epitaxial wafer, thereby improve epitaxial wafer output quality.
In a fourth aspect, embodiments of the present application further provide an electronic device, which includes a processor and a memory, where the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the steps in the method as provided in the second aspect are executed.
In a fifth aspect, the present application further provides a storage medium, on which a computer program is stored, where the computer program runs the steps in the method provided in the second aspect when being executed by a processor.
Therefore, the embodiment of the application provides a purging and cooling system, a purging and cooling method, a purging and cooling device, electronic equipment and a storage medium for an epitaxial furnace, wherein the purging and cooling system utilizes purging gas to take away heat on an epitaxial wafer in a circulating flow process to cool the epitaxial wafer, and controls a temperature adjusting mechanism to adjust first temperature information of the purging and cooling gas according to second temperature information to realize real-time adjustment of the first temperature information, so that the temperature of the purging and cooling gas entering a cooling chamber is slightly lower than the temperature of the epitaxial wafer, purging and cooling treatment is performed on the epitaxial wafer, and generation of plastic deformation and dislocation during cooling of the epitaxial wafer caused by an overlarge temperature difference between the purging and the epitaxial wafer is prevented, and thus the output quality of the epitaxial wafer is improved.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial furnace purging and cooling system according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an epitaxial furnace purging and cooling system in embodiment 1 according to an embodiment of the present disclosure.
Fig. 3 is a flowchart of a purging and cooling method for an epitaxial furnace according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of a purging and cooling device for an epitaxial furnace according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Reference numerals: 100. a cooling chamber; 200. a gas thermometer; 300. a temperature adjustment mechanism; 400. a temperature detector; 500. a gas circulation mechanism; 600. a controller; 700. an electronic device; 101. an epitaxial wafer; 102. a tower lamp; 301. cooling the rows; 302. a water temperature meter; 303. a cooling water circulation mechanism; 304. an electric heater; 501. a filter; 502. a first pneumatic valve; 503. a flow meter; 504. a circulation pump; 505. a second pneumatic valve; 601. an acquisition module; 602. a circulation module; 603. an adjustment module; 701. a processor; 702. a memory; 703. a communication bus; 801. an air supply mechanism; 802. a third pneumatic valve; 803. a fourth pneumatic valve; 804. an exhaust gas treatment device.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In a first aspect, please refer to fig. 1, fig. 1 is a purging and cooling system for an epitaxial furnace in some embodiments of the present application, for purging and cooling an epitaxial wafer, the system including:
a cooling chamber 100 in which an epitaxial wafer 101 is placed and which is filled with a purge gas for purging and cooling the epitaxial wafer 101;
a gas thermometer 200 for acquiring first temperature information of the purge gas;
a temperature adjusting mechanism 300 for adjusting first temperature information of the purge gas;
the temperature detector 400 is used for acquiring second temperature information of the epitaxial wafer 101;
a gas circulation mechanism 500 for driving purge gas to circulate inside and outside the cooling chamber 100;
and the controller 600 is used for controlling the purge gas to circularly flow so as to circularly purge and cool the epitaxial wafer 101, and controlling the temperature adjusting mechanism 300 to adjust the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer 101.
Specifically, the first temperature information is the temperature at which the purge gas enters the cooling chamber 100, and therefore, the controller 600 controls the temperature adjustment mechanism 300 to adjust the first temperature information of the purge gas to adjust the temperature at which the purge gas enters the cooling chamber 100.
Specifically, the second temperature information is the real-time temperature of the epitaxial wafer 101 placed in the cooling chamber 100.
In the purging and cooling system for the epitaxial furnace according to the embodiment of the present application, the controller 600 is used to control the operation of the gas circulation mechanism 500, so that the purging gas circularly flows to perform circular purging and cooling on the epitaxial wafer 101, the purging gas takes away heat on the epitaxial wafer 101 in the circular flowing process to cool the epitaxial wafer 101, the controller 600 controls the temperature adjustment mechanism 300 according to the second temperature information to adjust the first temperature information of the purging gas to realize real-time adjustment of the first temperature information, that is, the temperature of the purging gas entering the cooling chamber 100 based on the circular flowing is adjusted according to the temperature of the epitaxial wafer 101, so that the temperature of the purging gas entering the cooling chamber 100 is slightly lower than the temperature of the epitaxial wafer 101, and the purging and cooling treatment is performed on the epitaxial wafer 101 to prevent the generation of plastic deformation and dislocation when the epitaxial wafer 101 is cooled due to an excessively large temperature difference between the purging gas and the epitaxial wafer 101, thereby improving the yield quality of the epitaxial wafer 101.
In addition, the gas circulation mechanism 500 is adopted to drive the purge gas to circularly flow inside and outside the cooling chamber 100, so that the purge gas has natural cooling capacity based on circular flow, the adjusting load of the temperature adjusting mechanism 300 is reduced, the purge gas is favorable for taking away the heat of the epitaxial wafer 101 to cool the epitaxial wafer 101, and the purge gas can be circularly used to save the gas cost; in addition, the purging gas is more uniform and ordered in temperature based on the flowing mixing of the gas when the purging gas circularly flows, and the influence on the cooling effect of the epitaxial wafer 101 caused by the fact that the purging gas with larger temperature difference distribution contacts the surface of the epitaxial wafer 101 is avoided.
In some preferred embodiments, the temperature adjustment mechanism 300 includes:
a heating mechanism for heating the purge gas;
a cooling mechanism for cooling the purge gas;
the controller 600 is configured to control the heating mechanism to adjust the first temperature information of the purge gas according to the second temperature information when the first temperature information is higher than the normal temperature, so as to gradually cool the epitaxial wafer 101, and the controller 600 is further configured to control the cooling mechanism to adjust the first temperature information of the purge gas according to the second temperature information, so as to gradually cool the epitaxial wafer 101 when the first temperature information is lower than or equal to the normal temperature.
Specifically, since the epitaxial wafer 101 is taken from the reaction chamber of the epitaxial furnace to the cooling chamber 100 for purging and cooling, it has a high temperature, and therefore, the purging gas needs to be preheated by the heating mechanism to a temperature close to that of the epitaxial wafer 101 for gradually cooling.
More specifically, in the process of purging and cooling the epitaxial wafer 101, the initial temperature of the epitaxial wafer 101 is far higher than the normal temperature, the purged gas introduced at the time is also far higher than the normal temperature, the purged gas can be naturally cooled due to the circulation flow when purging and cooling the epitaxial wafer 101, and at the moment, the purged gas needs to be continuously heated by using the heating mechanism, so that the first temperature information of the purged gas is adjusted by controlling the heating mechanism according to the second temperature information to gradually cool the epitaxial wafer 101, and the phenomenon that the temperature of the purged gas is excessively fast and the excessive temperature difference is generated between the purged gas and the epitaxial wafer 101 is avoided.
More specifically, the process of adjusting the first temperature information by the heating mechanism is to gradually reduce the heating efficiency, so that the first temperature information can be gradually reduced, that is, the purge gas can be matched with the gradual reduction of the temperature of the epitaxial wafer 101 and the temperature of the purge gas is always kept below the temperature of the epitaxial wafer 101, so that the purge cooling system of the embodiment of the present application can continuously utilize the purge gas to purge and cool the epitaxial wafer 101 on the premise of avoiding the excessive temperature difference between the purge gas and the epitaxial wafer 101.
More specifically, when the first temperature information is reduced to the normal temperature level, which indicates that the heater has suspended heating and cannot adjust the purge gas to a lower temperature, the controller 600 controls the cooling mechanism to start to adjust the temperature of the purge gas to be lower than the normal temperature and continues purge cooling of the epitaxial wafer 101, so that the epitaxial wafer 101 can continue the low-temperature purge cooling process lower than the normal temperature.
Specifically, the cooling mechanism cools the purge gas by using a cooling liquid, and the cooling liquid may be a common cooling liquid such as cooling water or cooling oil.
More specifically, the process of adjusting the first temperature information by the cooling mechanism is to gradually increase the cooling efficiency, so that the first temperature information can be gradually reduced, that is, the purge gas can gradually decrease in temperature matching with the epitaxial wafer 101 and the temperature of the purge gas is always kept below the temperature of the epitaxial wafer 101, so that the purge cooling system of the embodiment of the present application can continuously perform low-temperature purge cooling on the epitaxial wafer 101 by using the purge gas on the premise of avoiding an excessive temperature difference between the purge gas and the epitaxial wafer 101 when the purge cooling temperature is lower than the normal temperature.
Specifically, the normal temperature is the ambient temperature outside the purging system of the epitaxial furnace, and purging and cooling of the epitaxial wafers 101 made of different materials have different cooling temperature requirements, so that the purging and cooling system provided by the application can cool the epitaxial wafers 101 to the specified temperature regardless of the outdoor normal temperature, and the application range of the purging and cooling system provided by the embodiment of the application is expanded; in addition, performing a suitable low-temperature purge process on a general epitaxial wafer 101 is also advantageous in stabilizing the structure of the epitaxial wafer 101.
Specifically, the temperature adjusting mechanism 300 includes a heating mechanism and a cooling mechanism, and can enable the adjustment process of the first temperature information of the purge gas to be seamlessly transited, that is, the adjustment process can be smoothly adjusted to be lower than the room temperature under the condition of being higher than the room temperature, and the cooling effect of the epitaxial wafer 101 is optimized.
In some preferred embodiments, both the heating mechanism and the cooling mechanism are provided outside the cooling chamber 100.
Specifically, the heating mechanism and the cooling mechanism are arranged outside the cooling chamber 100 to regulate the temperature of the purge gas which circularly flows to the outside of the cooling chamber 100, so that the purge gas flows into the cooling chamber 100 to purge and cool the epitaxial wafer 101 after the temperature of the purge gas is stable, the temperature of the purge gas is ensured to be uniform, and the problem of uneven temperature or gas turbulence caused by directly regulating the temperature of the purge gas in the cooling chamber 100 is avoided.
In some preferred embodiments, the gas circulation mechanism 500 includes a circulation pipeline having two ends connected to the reaction chamber, and the heating mechanism and the cooling mechanism are both disposed on the circulation pipeline, and the temperature of the purge gas can be adjusted while ensuring the gas tightness of the purge gas flow region by adjusting the first temperature information of the purge gas by heating and cooling the outer wall of the circulation pipeline, respectively.
In some preferred embodiments, the system further comprises:
a gas supply mechanism 801 for supplying purge gas to the cooling chamber 100;
the waste gas treatment mechanism is used for treating impurity gas;
the controller 600 is used for controlling the gas supply mechanism 801 to generate purge gas to fill the cooling chamber 100, and discharging the impurity gas in the cooling chamber 100 to the exhaust gas treatment mechanism for treatment.
Specifically, after epitaxial growth of the epitaxial wafer 101 is completed in the reaction chamber of the epitaxial furnace, the epitaxial wafer 101 is transferred to the cooling chamber 100, so that impurity gas is brought into the cooling chamber 100, therefore, the gas supply mechanism 801 is required to generate purge gas to supply the purge gas to the cooling chamber 100, the cooling chamber 100 is filled with the purge gas for purging and cooling, the impurity gas originally existing in the cooling chamber 100 is extruded to the exhaust gas treatment mechanism, the exhaust gas treatment mechanism performs exhaust gas treatment on the impurity gas, the influence on the purging and cooling effect of the epitaxial wafer 101 due to the fact that the purge gas is mixed with the impurity gas in the purging and cooling process of the epitaxial wafer 101 is avoided, and therefore the output quality of the epitaxial wafer 101 is improved.
More specifically, after the epitaxial wafer 101 is placed in the cooling chamber 100, the controller 600 controls the gas supply mechanism 801 and the exhaust gas treatment mechanism to be activated for impurity gas treatment, and after all the impurity gas is discharged from the cooling chamber 100, the controller 600 controls the corresponding valves of the gas supply mechanism 801 and the exhaust gas treatment mechanism to be closed, and then the temperature adjustment mechanism 300 and the gas circulation mechanism 500 are activated again to perform circulation purge cooling treatment on the epitaxial wafer 101.
More specifically, the controller 600 judges whether the impurity gas is completely discharged into the exhaust gas treatment mechanism or not based on the volume of the cooling chamber 100 and the total flow rate of the purge gas generated by the gas supply mechanism 801.
More specifically, the gas supply mechanism 801 is connected to the circulation pipeline, and when the gas supply mechanism 801 supplies purge gas to the cooling chamber 100, the heating mechanism heats the purge gas generated by the gas supply mechanism 801, so that the temperature of the purge gas firstly entering the cooling chamber 100 is close to the temperature of the epitaxial wafer 101, that is, the difference between the temperature of the purge gas and the temperature of the epitaxial wafer 101 in the process of discharging impurity gas is ensured to be within a process range, and the epitaxial wafer 101 is prevented from generating plastic deformation and dislocation.
In some preferred embodiments, the controller 600 stores the purge time information, and the controller 600 sets the temperature adjustment mechanism 300 to adjust the adjustment range of the first temperature information and/or the flow rate of the purge gas circulating flow driven by the gas circulation mechanism 500 according to the purge time information.
Specifically, the purge time information is the duration of the entire purge cooling process, i.e., the time for purging and cooling the epitaxial wafer 101 to the predetermined final cooling temperature, and the purge time information is set by the user input on the controller 600.
Specifically, the controller 600 formulates a cooling curve according to the second temperature information of the epitaxial wafer 101 at the beginning and the final cooling temperature of the epitaxial wafer 101, wherein the cooling curve is a temperature change curve of the epitaxial wafer 101 based on time, and the controller 600 dynamically adjusts the adjustment amplitude of the first temperature information of the purge gas and/or the gas flow rate of the gas circulation mechanism 500 according to the cooling curve so that the change of the second temperature information conforms to the cooling curve, so that the epitaxial wafer 101 smoothly completes the purge cooling process in the set time, and the purge cooling effect of the epitaxial wafer 101 is better.
Specifically, the adjustment range of the first temperature information and the dynamic adjustment of the gas flow rate of the gas circulation mechanism 500 are performed based on the deviation between the second temperature information and the cooling curve, for example, the second temperature information is higher than the corresponding point on the cooling curve at a time, which proves that the cooling speed of the epitaxial wafer 101 is lower than the expected value, and the controller 600 decreases the first temperature information according to the preset adjustment amount and/or increases the circulation flow speed of the purge gas appropriately to slightly increase the cooling speed of the epitaxial wafer 101, so that the variation of the second temperature information of the epitaxial wafer 101 returns to the cooling curve.
More specifically, a flow meter is disposed on the circulation pipeline of the gas circulation mechanism 500, and is used for obtaining flow information of the purge gas in the circulation flow, where the flow information includes a flow speed and a flow rate in the circulation pipeline of the purge gas, and the controller 600 can more accurately adjust the circulation flow speed of the purge gas after obtaining the flow information measured by the flow meter.
In addition, a flow rate threshold is arranged in the controller 600, when the flow rate of the purge gas reaches the flow rate threshold, the controller 600 controls the gas circulation mechanism 500 to prevent the flow rate of the purge gas from being increased, so that the adjustment of the first temperature information due to the too fast flow rate of the purge gas is prevented, and the purge effect of the epitaxial wafer 101 due to the too large purge force of the purge gas in the reaction chamber is prevented.
In some preferred embodiments, the cooling chamber 100 is provided with a dome lamp 102 for reflecting the cooling progress of the epitaxial wafer 101.
Specifically, the tower lamp 102 is controlled by the controller 600, and a plurality of indicator lamps for reflecting the purging cooling stage are provided thereon.
More specifically, the plurality of indicator lights include at least indicator lights for reflecting the stages of no load, cooling above room temperature, cooling below room temperature, and cooling completion of the cooling chamber 100, so that a user can visually check the purging and cooling conditions of the epitaxial wafer 101 from the outside of the cooling chamber 100.
Example 1
As shown in fig. 2, the purging and cooling system for the epitaxial furnace includes a cooling chamber 100, a gas circulation mechanism 500, a gas supply mechanism 801, a heating mechanism, a cooling mechanism, an exhaust gas treatment mechanism, a gas thermometer 200, a thermometer 400, a tower lamp 102, and a controller (not shown).
A tray for placing the epitaxial wafer 101 and purging and cooling the epitaxial wafer 101 is disposed in the cooling chamber 100, and the temperature detector 400 is connected to the tray to obtain the temperature of the tray and the temperature of the epitaxial wafer 101.
The gas circulation mechanism 500 includes a circulation pipeline having two ends connected to the cooling chamber 100, a filter 501, a first pneumatic valve 502, a flow meter 503, a circulation pump 504, and a second pneumatic valve 505 sequentially disposed on the circulation pipeline, and the gas thermometer 200 is disposed on the circulation pipeline and located at one end of the second pneumatic valve 505 close to the cooling chamber 100.
Wherein the cooling mechanism is provided on the circulation pipe and between the circulation pump 504 and the second air-operated valve 505, and it includes a cooling bank 301 provided on the circulation pipe, a cooling water circulation mechanism 303 for supplying cooling water to the cooling bank 301, and a water temperature meter 302 for detecting the temperature of the cooling water.
Wherein the heating mechanism is an electric heater 304, which is disposed on the circulation pipeline and between the second pneumatic valve 505 and the gas thermometer 200.
The air supply mechanism 801 is an external air source, and is connected to the circulation pipeline through a third pneumatic valve 802, and the connection position is on the installation position of the heating mechanism.
The exhaust gas treatment means includes an exhaust gas pipe connected to the cooling chamber 100, and a fourth pneumatic valve 803 and an exhaust gas treatment device 804 which are provided in this order on the exhaust gas pipe.
Specifically, the cooling chamber 100 has a sealing door, the sealing door of the cooling chamber 100 is closed after the epitaxial wafer 101 is placed on the tray of the cooling chamber 100, and then the controller 600 controls the components to cooperate to perform purging cooling on the epitaxial wafer 101, wherein the purging cooling process is as follows:
the controller closes the first pneumatic valve 502 and the second pneumatic valve 505, opens the third pneumatic valve 802 and the fourth pneumatic valve 803, starts the gas supply mechanism 801 to generate purge gas, starts the exhaust indicator lamp in the tower lamp 102, obtains the tray temperature through the temperature detector 400, namely obtains the current temperature of the epitaxial wafer 101, the purge gas is heated by the electric heater 304, the controller obtains the heating power of the electric heater 304 through the gas thermometer 200 to adjust the temperature of the purge gas, so that the temperature of the purge gas rises to be similar to the temperature of the epitaxial wafer 101, the purge gas generated by the gas supply mechanism 801 is heated and then continuously input into the cooling chamber 100, and the originally existing impurity gas in the cooling chamber 100 is expelled into the exhaust gas pipeline, the impurity gas is processed by the exhaust gas processing device 804, the controller judges whether the impurity gas is completely eliminated in the cooling chamber 100 according to the total amount of the gas input by the gas supply mechanism 801, if it is completely excluded, the total control gas supply mechanism 801 stops, closes the third pneumatic valve 802 and the fourth pneumatic valve 803, opens the first pneumatic valve 502 and the second pneumatic valve 505, and then controls the circulation pump 504 to start circulating flow of the purge gas, and starts the cooling indicator lamp in the tower lamp 102.
A user sets cooling time in a controller according to the cooling process of the epitaxial wafer 101, the controller adjusts the input power of a circulating pump 504 according to the cooling time, the circulating flow speed of the purge gas is accurately adjusted by combining a flowmeter 503, the electric heater 304 continuously heats the purge gas in the process of purging and cooling the epitaxial wafer 101 by the initial gas circulating flow, the controller respectively obtains the temperatures of the purge gas and the epitaxial wafer 101 through a gas thermometer 200 and a temperature measurer 400, the output power of the electric heater 304 is gradually reduced according to a certain slope, so that the temperature of the purge gas is gradually reduced and slightly lower than the temperature of the epitaxial wafer 101, the temperature between the epitaxial wafer 101 and the purge gas is small and the cooling is gradually carried out, when the temperature difference of the purge gas is reduced to the room temperature (the temperature outside the furnace), the purge gas cannot be naturally cooled in the circulating flow process, and the controller controls the electric heater 304 to be closed at the moment, the cooling mechanism is started, the cooling row 301 containing cooling water flowing circularly is used for cooling the circulating pipeline, so that the temperature of the purge gas can be continuously reduced, the controller respectively obtains the temperature of the purge gas, the temperature of the epitaxial wafer 101 and the temperature of the cooling water through the gas thermometer 200, the temperature measurer 400 and the water temperature meter 302, the temperature of the cooling water is gradually reduced according to a certain slope, the temperature of the purge gas can still be gradually reduced and is slightly lower than the temperature of the epitaxial wafer 101 after being equal to or lower than the room temperature, the temperature difference between the epitaxial wafer 101 and the purge gas is small, the epitaxial wafer 101 can be gradually cooled, and the temperature of the epitaxial wafer 101 can be reduced to the cooling temperature specified by the process.
After the epitaxial wafer 101 has cooled to the specified temperature, the controller turns off the first and second pneumatic valves 502 and 505 and activates the completion indicator light in the tower light 102 to complete the entire epitaxial wafer 101 purge cooling process.
In a second aspect, please refer to fig. 3, fig. 3 is a purging and cooling method for an epitaxial furnace, provided in some embodiments of the present application, for purging and cooling an epitaxial wafer 101, the epitaxial furnace is provided with a cooling chamber 100, the cooling chamber 100 is used for placing the epitaxial wafer 101 and is filled with a purging gas for purging and cooling the epitaxial wafer 101, and the method includes the following steps:
s1, acquiring first temperature information of the purge gas;
s2, acquiring second temperature information of the epitaxial wafer 101;
s3, controlling the circular flow of the purge gas inside and outside the cooling chamber 100;
and S4, adjusting the first temperature information of the purge gas according to the second temperature information to gradually cool the epitaxial wafer 101.
According to the purging and cooling method for the epitaxial furnace, purging gas circularly flows to perform circular purging and cooling on the epitaxial wafer 101, the first temperature information of the purging gas is adjusted according to the second temperature information in the cooling process, so that the temperature of the purging gas entering the cooling chamber 100 can be slightly lower than the temperature of the epitaxial wafer 101, purging and cooling treatment is performed on the epitaxial wafer 101, the phenomenon that the epitaxial wafer 101 is cooled due to the fact that the temperature difference between the purging gas and the epitaxial wafer 101 is too large is prevented, and therefore the output quality of the epitaxial wafer 101 is improved.
In some preferred embodiments, further comprising steps performed between steps S2 and S3:
s2', heating the purge gas located outside the cooling chamber 100 according to the second temperature information, and introducing the heated purge gas into the cooling chamber 100 to remove the impurity gas.
Specifically, after the impurity gas in the cooling chamber 100 is removed, the purge gas is used to perform the circulating purge cooling on the epitaxial wafer 101, so that the impurity gas can be prevented from affecting the cooling quality of the epitaxial wafer 101.
In a third aspect, referring to fig. 4, fig. 4 is a purging and cooling apparatus for an epitaxial furnace according to an embodiment of the present application, configured to purge and cool an epitaxial wafer 101, where a cooling chamber 100 is used to hold the epitaxial wafer 101 and is filled with a purging gas for purging and cooling the epitaxial wafer 101, and the apparatus includes:
the acquiring module 601 is used for acquiring first temperature information of the purge gas and second temperature information of the epitaxial wafer 101;
a circulation module 602 for controlling the circulation of the purge gas inside and outside the cooling chamber 100;
and the adjusting module 603 is configured to adjust the first temperature information of the purge gas according to the second temperature information to gradually cool the epitaxial wafer 101.
The utility model provides an epitaxial furnace sweeps cooling device, utilize circulation module 602 control to sweep gaseous circulation flow and carry out circulation sweep cooling to epitaxial wafer 101, the first temperature information that the second temperature information that obtains module 601 and obtain comes control adjusting module 603 to adjust the sweep gas in the cooling process, the temperature that makes the sweep gas that gets into in cooling chamber 100 can be slightly less than epitaxial wafer 101's temperature, and sweep cooling process to epitaxial wafer 101, prevent that the temperature difference between sweep gas and epitaxial wafer 101 is too big to lead to epitaxial wafer 101 to cool off and produce plastic deformation and dislocation, thereby improve epitaxial wafer 101 output quality.
In a fourth aspect, please refer to fig. 5, fig. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application, and the present application provides an electronic device 700, including: the processor 701 and the memory 702, the processor 701 and the memory 702 being interconnected and communicating with each other via a communication bus 703 and/or other form of connection mechanism (not shown), the memory 702 storing a computer program executable by the processor 701, the processor 701 executing the computer program when the computing device is running to perform the method in the implementation of the above-described embodiment.
In a fifth aspect, the present application provides a storage medium, and when being executed by a processor, the computer program performs the method in the implementation manner of the foregoing embodiment. The storage medium may be implemented by any type of volatile or nonvolatile storage device or combination thereof, such as a Static Random Access Memory (SRAM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), an Erasable Programmable Read-Only Memory (EPROM), a Programmable Read-Only Memory (PROM), a Read-Only Memory (ROM), a magnetic Memory, a flash Memory, a magnetic disk, or an optical disk.
In summary, the embodiment of the present application provides a purging and cooling system, a purging and cooling method, an apparatus, an electronic device, and a storage medium for an epitaxial furnace, wherein the system utilizes purging gas to take away heat from an epitaxial wafer 101 in a circulating flow process to cool the epitaxial wafer 101, and controls a temperature adjustment mechanism 300 to adjust first temperature information of the purging gas according to second temperature information to realize real-time adjustment of the first temperature information, so that the temperature of the purging gas entering a cooling chamber 100 is slightly lower than the temperature of the epitaxial wafer 101, and the purging and cooling process is performed on the epitaxial wafer 101 to prevent a large temperature difference between the purging gas and the epitaxial wafer 101 from generating plastic deformation and dislocation when the epitaxial wafer 101 is cooled, thereby improving the output quality of the epitaxial wafer 101.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. An epitaxial furnace purge cooling system for purge cooling an epitaxial wafer, the system comprising:
the cooling chamber is used for placing an epitaxial wafer and filled with purging gas for purging and cooling the epitaxial wafer;
the gas thermometer is used for acquiring first temperature information of the purge gas;
the temperature adjusting mechanism is used for adjusting first temperature information of the purge gas;
the temperature detector is used for acquiring second temperature information of the epitaxial wafer;
the gas circulating mechanism is used for driving the purging gas to circularly flow inside and outside the cooling chamber;
and the controller is used for controlling the purge gas to circularly flow so as to circularly purge and cool the epitaxial wafer, and controlling the temperature regulating mechanism to regulate the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer.
2. The epitaxial furnace purging and cooling system of claim 1, wherein the temperature adjustment mechanism comprises:
a heating mechanism for heating the purge gas;
a cooling mechanism for cooling the purge gas;
the controller is used for when first temperature information is higher than the normal atmospheric temperature, according to second temperature information control heating mechanism adjusts the first temperature information of sweeping gas so that the epitaxial wafer cools down gradually, the controller still is used for when first temperature information is less than or equal to the normal atmospheric temperature, according to second temperature information control cooling mechanism adjusts the first temperature information of sweeping gas so that the epitaxial wafer cools down gradually.
3. The purging and cooling system for an epitaxial furnace according to claim 2, wherein the heating mechanism and the cooling mechanism are both disposed outside the cooling chamber.
4. The epitaxial furnace purging and cooling system of claim 1, further comprising:
the gas supply mechanism is used for supplying purge gas to the cooling chamber;
the waste gas treatment mechanism is used for treating impurity gas;
the controller is used for controlling the gas supply mechanism to generate purge gas to fill the cooling chamber, and discharging impurity gas in the cooling chamber to the waste gas treatment mechanism for treatment.
5. The purging and cooling system for the epitaxial furnace according to claim 1, wherein the controller stores purging time information, and the controller sets the temperature adjusting mechanism to adjust the adjusting amplitude of the first temperature information and/or the flow speed of the purging gas circulating mechanism to drive the purging gas to flow circularly according to the purging time information.
6. The purging and cooling system for the epitaxial furnace according to claim 1, wherein a tower lamp for reflecting the cooling progress of the epitaxial wafer is arranged on the cooling chamber.
7. An epitaxial furnace purging and cooling method for purging and cooling an epitaxial wafer, wherein the epitaxial furnace is provided with a cooling chamber for placing the epitaxial wafer and filled with purging gas for purging and cooling the epitaxial wafer, the method comprising the steps of:
acquiring first temperature information of purge gas;
acquiring second temperature information of the epitaxial wafer;
controlling the circulation flow of a purge gas inside and outside the cooling chamber;
and adjusting the first temperature information of the purge gas according to the second temperature information so as to gradually cool the epitaxial wafer.
8. An epitaxial furnace purging and cooling device for purging and cooling an epitaxial wafer, wherein the cooling chamber is used for placing the epitaxial wafer and is internally filled with a purging gas for purging and cooling the epitaxial wafer, the device comprising:
the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring first temperature information of purge gas and second temperature information of an epitaxial wafer;
the circulation module is used for controlling the circulation flow of the purge gas inside and outside the cooling chamber;
and the adjusting module is used for adjusting the first temperature information of the purging gas according to the second temperature information so as to gradually cool the epitaxial wafer.
9. An electronic device comprising a processor and a memory, the memory storing computer readable instructions which, when executed by the processor, perform the steps of the method of claim 7.
10. A storage medium having a computer program stored thereon, wherein the computer program when executed by a processor performs the steps of the method of claim 7.
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