CN113634878A - Optical system and method for laser cutting multilayer materials - Google Patents
Optical system and method for laser cutting multilayer materials Download PDFInfo
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- CN113634878A CN113634878A CN202110943188.3A CN202110943188A CN113634878A CN 113634878 A CN113634878 A CN 113634878A CN 202110943188 A CN202110943188 A CN 202110943188A CN 113634878 A CN113634878 A CN 113634878A
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- 239000000463 material Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000003698 laser cutting Methods 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 238000007493 shaping process Methods 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 6
- 230000008646 thermal stress Effects 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 34
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The invention discloses a method for cutting a multilayer material by laser, wherein the multilayer material comprises stacked materials or embedded stacked materials which are sequentially stacked, and the method is characterized by comprising the following steps of: dividing beams emitted by the laser into beams by a light path system, shaping the beams, and enabling the beams to pass through the same laser cutting head; at least two different laser beams are focused by a laser cutting head onto the multilayer material, respectively, such that each laser beam is exposed on a different material layer of the multilayer material. The invention also discloses a laser cutting system, comprising: the laser beam is emitted by the laser beam, is corrected by the optical lens and then is exposed on different material layers of the multilayer material through the laser cutting head. The method and the system are particularly suitable for cutting the wafer of the semiconductor device, so that the cutting efficiency is effectively improved, the cut is tidy, the uncontrollable or large-scale damage cannot occur to multiple layers, the subsequent work amount is reduced, the work amount is reduced, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of laser processing materials, and particularly relates to an optical system and a method for laser cutting of a multilayer material.
Background
Semiconductor device wafers are a complex substrate. The device stacked on the silica gel wafer is a heterogeneous material with multi-layer mixing and special properties, and is a typical device stacking structure. After the entire production process of the semiconductor chip factory is completed, the mother wafer is divided into individual crystal slices. Wafer dicing is traditionally done by using a saw to grind the material between the dice and separate the dice. As wafer geometries become smaller (e.g., 10nm and below), wafer density increases and the gap between wafers becomes very narrow. In addition, the new complex wafer structure uses several new materials that place high demands on the performance of the wafer.
The existing mechanical slicing method has great damage risks to the wafers due to the following reasons: (a) as the gap between the chips becomes narrower, it becomes increasingly difficult to accurately and repeatedly center the saw in the gap. The result is that the designer is forced to maintain a certain gap width when designing the crystal to accommodate the limitations of the sawing process. Therefore, it is very difficult to increase the packing density of the wafer. (b) New materials in complex wafer stacks have significantly different mechanical properties, e.g. the hardness of the material makes the mechanical cutting technique difficult to use. A common failure example is tearing/cracking of the material during sawing, resulting in an increase of leakage current in the wafer. To overcome this problem, manufacturers are forced to use "crack arrest" lasers around the wafer, resulting in a waste of valuable wafer resources. (c) The dicing saw must be operated very slowly to minimize damage, resulting in reduced production efficiency.
When mechanically cutting or laser cutting, each material in the stack reacts differently, making uniform cuts through the stack of materials is a challenge faced by this patent.
Disclosure of Invention
In view of the above problems, the present invention provides an optical system and method for laser cutting a multilayer material to improve cutting speed and efficiency.
The purpose of the invention and the technical problem to be solved are realized by adopting the following technical scheme.
The invention provides a method for cutting a multilayer material by laser, wherein the multilayer material comprises stacked materials or embedded stacked materials which are sequentially stacked, and the method is characterized by comprising the following steps:
dividing beams emitted by the laser into beams by a light path system, shaping the beams, and enabling the beams to pass through the same laser cutting head;
at least two different laser beams are focused by a laser cutting head onto the multilayer material, respectively, such that each laser beam is exposed on a different material layer of the multilayer material.
Further, the method further comprises: and utilizing the at least two different laser beams to make relative motion with the multilayer material so as to enable the at least two different laser beams to respectively act on different material layers of the multilayer material and form etching paths in the different material layers of the multilayer material.
Further, the method further comprises: and separating the multilayer material by taking the etching path as a separation path.
Further, the method for separating the multilayer material is as follows: mechanical separation and/or laser separation.
Furthermore, the mechanical separation is carried out by utilizing the action of thermal stress in the material.
Further, the at least two different laser beams are emitted by separate laser sources.
Further, the at least two different laser beams are separated into a plurality of branches by one laser source via a laser and focused individually by the array.
The purpose of the invention and the technical problem to be solved are also realized by adopting the following technical scheme.
The invention provides a system for laser cutting of a multilayer material, which is characterized by comprising: the laser beam is emitted by the laser beam, is corrected by the optical lens and then is exposed on different material layers of the multilayer material through the laser cutting head.
Further, the laser cutting head has at least two paths for passing the laser beam.
By the technical scheme, the invention at least has the following advantages: the invention provides a system and a method for laser multilayer materials, which realize the processing of multilayer materials laminated by materials with different characteristics through exposing different laser beams on the material layers of the multilayer materials through a mechanical separation or laser separation method. The mechanical separation is realized by utilizing the mechanical principle after laser heating, and is not realized by a mechanical processing means. The method is particularly suitable for cutting the wafer of the semiconductor device, so that the cutting efficiency is effectively improved, different laser beams correspond to different material layers, the cut is tidy, uncontrollable or large-scale damage cannot occur to multiple layers, the subsequent work amount is reduced, the work amount is reduced, and the production efficiency is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of the cutting principle of one embodiment of the present invention;
FIG. 2 is a schematic diagram of the cutting principle of one embodiment of the present invention;
FIG. 3 is a schematic diagram of the cutting principle of another embodiment of the present invention;
fig. 4 is a schematic diagram of the cutting principle of another embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the invention easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A method of laser cutting a multilayer material according to the present invention, the multilayer material including a stack material or an embedded stack material stacked in sequence, the method comprising:
dividing beams emitted by the laser into beams by a light path system, shaping the beams, and enabling the beams to pass through the same laser cutting head;
at least two different laser beams are focused by a laser cutting head onto the multilayer material, respectively, such that each laser beam is exposed on a different material layer of the multilayer material.
Preferably, the method further comprises: and utilizing the at least two different laser beams to make relative motion with the multilayer material so as to enable the at least two different laser beams to respectively act on different material layers of the multilayer material and form etching paths in the different material layers of the multilayer material.
Preferably, the method further comprises: and separating the multilayer material by taking the etching path as a separation path.
Preferably, the method of separating the multilayer material is: mechanical separation and/or laser separation.
Preferably, the mechanical separation is performed by utilizing the action of thermal stress in the material.
Preferably, the at least two different laser beams are emitted by separate laser sources.
Preferably, the at least two different laser beams are separated into a plurality of branches by one laser source via a laser and focused individually by the array.
Preferably, the surface of the multilayer material may also be provided with a thin film layer for capturing any debris generated during the dicing process and preventing contamination of the circuitry of the wafer.
A system for laser cutting a multilayer material according to the present invention comprises: the laser beam is emitted by the laser beam, is corrected by the optical lens and then is exposed on different material layers of the multilayer material through the laser cutting head.
Preferably, the laser cutting head has at least two paths for passing the laser beam.
Example 1
The process of continuously cutting the whole silica gel wafer is described by taking the silica gel wafer as a specific multi-layer material.
As shown in fig. 1 and 2, in this embodiment, the continuous cutting comprises a process of cutting the 1 st layer (device layer) and the 2 nd layer (silicone wafer body) with two tailored laser beams. Both cutting processes are deployed by separate cutting blades. Different laser beams are focused on the substrate, respectively, such that a first laser beam passes through the material stack and is exposed at the bottom layer and a second laser beam passes through the silica gel substrate. In some cases, the second laser beam may simply configure the silicone wafer body to be preferentially weakened along the cutting path and mechanically separated along the next step. The laser beams may be emitted by two separate laser sources or by one laser source via optical splitting.
The specific process is as follows: the laser beam is emitted by the laser, is corrected by the optical lens, acts on the cutting head along different paths of the laser cutting head, is exposed on the corresponding material layer, and cuts the corresponding material layer by the laser cutting head through different paths.
For cutting different layer materials, lasers with corresponding parameters are selected according to different thicknesses and different laser cutting processes, so that laser beams with proper wavelength, power, frequency and pulse width are selected.
The laser cutting head is used for focusing laser rays and cutting by utilizing the focal depth of the focused laser rays, the simplest structure is a condensing lens and a mirror bracket, but because the requirements on the focal position, the focal depth and the size of focal spots of the laser rays are different, a plurality of optical lenses can form the cutting head or the cutting head which drives the condensing lens to scan by utilizing a motor is a galvanometer.
The mechanical separation can also be replaced by a laser. After the second laser beam is completely processed, a third laser beam can be used for mechanical separation by utilizing the internal thermal stress of the material, so that the mechanical separation step is completed.
Example 2
As shown in fig. 3, in this embodiment, on the basis of the above embodiment 1, a film layer (layer 3) for adhering the wafer cutting powder can be further coated on the outermost side of the silicon wafer body for capturing any fragments generated during the cutting process and preventing the circuit of the wafer from being contaminated. In this embodiment, three separate cutting processes may be used for each layer. On the other hand, it is possible to integrate the cutting of multiple layers into one cutting process.
Example 3
As shown in fig. 4, in this embodiment, on the basis of embodiment 2, cutting can be performed by four laser beams, that is, the cutting head height is changed, and the laser beam required for cutting the wafer of the next layer is moved to the depth of focus range, so that the previous laser beam is recorded on the previous layer and the next layer is exposed to the next laser beam. The number and focus of the beam arrays is determined by the thickness and composition of the material being scribed. A single laser beam can be split into multiple branches from the output of a single laser and focused individually through an array.
In summary, the present invention provides a system and method for laser processing a multi-layer material, which can process a multi-layer material laminated by different materials with different characteristics by exposing different laser beams to the material layers of the multi-layer material through a mechanical separation or laser separation method. The method is particularly suitable for cutting the wafer of the semiconductor device, so that the cutting efficiency is effectively improved, different laser beams correspond to different material layers, the cut is tidy, uncontrollable or large-scale damage cannot occur to multiple layers, the subsequent work amount is reduced, the work amount is reduced, and the production efficiency is improved.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method of laser cutting a multilayer material comprising a stack of materials or an embedded stack of materials stacked in sequence, the method comprising:
dividing beams emitted by the laser into beams by a light path system, shaping the beams, and enabling the beams to pass through the same laser cutting head;
at least two different laser beams are focused by a laser cutting head onto the multilayer material, respectively, such that each laser beam is exposed on a different material layer of the multilayer material.
2. The method of laser cutting a multilayer material of claim 1, further comprising: and utilizing the at least two different laser beams to make relative motion with the multilayer material so as to enable the at least two different laser beams to respectively act on different material layers of the multilayer material and form etching paths in the different material layers of the multilayer material.
3. The method of laser cutting a multilayer material of claim 2, further comprising: and separating the multilayer material by taking the etching path as a separation path.
4. A method of laser cutting a multilayer material according to claim 3, characterized in that the multilayer material is separated by: mechanical separation and/or laser separation.
5. A method for laser cutting a multilayer material according to claim 4, characterized in that the mechanical separation is a separation by the action of thermal stresses within the material.
6. The method of laser cutting a multilayer material according to claim 1, wherein the at least two different laser beams are emitted by separate laser sources.
7. The method of claim 1, wherein the at least two different laser beams are separated into multiple branches by a laser source and individually focused by an array.
8. The method of claim 1, wherein the surface of the multilayer material is further provided with a thin film layer for capturing any debris generated during the dicing process and preventing contamination of the electrical circuit of the wafer.
9. A system for laser cutting a multilayer material, comprising: the laser beam is emitted by the laser beam, is corrected by the optical lens and then is exposed on different material layers of the multilayer material through the laser cutting head.
10. The system of claim 9, wherein the laser cutting head has at least two paths for passing the laser beam.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110943188.3A CN113634878A (en) | 2021-08-17 | 2021-08-17 | Optical system and method for laser cutting multilayer materials |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110943188.3A CN113634878A (en) | 2021-08-17 | 2021-08-17 | Optical system and method for laser cutting multilayer materials |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114871597A (en) * | 2022-07-08 | 2022-08-09 | 广东国玉科技有限公司 | Cutting method and cutting system for composite film layer |
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