CN113634831A

CN113634831A - Seamless hologram pattern transfer method

Info

Publication number: CN113634831A
Application number: CN202010392509.0A
Authority: CN
Inventors: 林刘恭
Original assignee: K Laser Technology Inc
Current assignee: K Laser Technology Inc; KLASER Tech Inc
Priority date: 2020-05-11
Filing date: 2020-05-11
Publication date: 2021-11-12

Abstract

A seamless hologram pattern transfer method for forming a pattern on a metal roller, comprising the steps of: forming a photoresist layer on the metal roller; performing a photolithography process on the photoresist layer to pattern the photoresist layer into a patterned photoresist layer; applying an electric field to the metal roller, and performing an anisotropic etching step by using the patterned photoresist layer as a mask to etch the pattern on the metal roller; and removing the patterned photoresist layer. By using the pattern transfer method of the invention, the yield and the cost can be optimized.

Description

Seamless hologram pattern transfer method

Technical Field

The present invention relates to a hologram pattern transfer process, and more particularly, to a pattern transfer method for forming a seamless hologram.

Background

In the prior art, referring to fig. 1 and 2, when a hologram pattern is to be transferred, a sheet-like hologram plate 11 is assembled on a roller 10, and then a hologram grain pattern on the hologram plate 11 is transferred onto a material 20, so that the material 20 has a corresponding hologram grain pattern 21. In the hologram grain pattern transfer method, a gap 22 corresponding to the seam 12 of the hologram plate 11 is left between two adjacent hologram grain patterns 21 on the transferred material 20. Therefore, the transferred material 20 is wasted greatly due to the existence of the gap 22 when the material 20 is used later. An improved technique is shown in fig. 3, which utilizes photoresist fabrication and development to transfer the pattern, wherein the roller 10 is tilted when forming the photoresist layer, the photoresist material is slowly coated on the roller 10 by means of drop coating (drop coating), the process procedure takes over a dozen days, and the uniformity of coating is not very good, which affects the subsequent transfer process.

In view of the above-mentioned shortcomings of the known structures, a pattern transfer method that is good in manufacturing quality, cost-effective and suitable for hologram pattern transfer is an object of great effort.

Disclosure of Invention

The invention provides a seamless hologram pattern transfer method, which directly transfers a pattern to a metal roller in an etching mode so as to achieve the optimization of yield and cost.

The invention provides a seamless hologram pattern transfer method for forming a pattern on a metal roller, which comprises the following steps: forming a photoresist layer on the metal roller; performing a photolithography process on the photoresist layer to pattern the photoresist layer into a patterned photoresist layer; applying an electric field to the metal roller, and performing an anisotropic etching step by using the patterned photoresist layer as a mask to etch the pattern on the metal roller; and removing the patterned photoresist layer.

The purpose, technical content, features and effects of the present invention will be more readily understood by the following detailed description of the embodiments taken in conjunction with the accompanying drawings.

Drawings

The drawings described herein are for illustration purposes only and are not intended to limit the scope of the present disclosure in any way. In addition, the shapes, the proportional sizes, and the like of the respective members in the drawings are merely schematic for facilitating the understanding of the present invention, and do not specifically limit the shapes, the proportional sizes, and the like of the respective members of the present invention. Those skilled in the art, having the benefit of the teachings of this invention, may choose from the various possible shapes and proportional sizes to implement the invention as a matter of case.

Fig. 1 to 3 are schematic views of the prior art of the present invention.

Fig. 4 is a flowchart illustrating a seamless hologram pattern transfer method according to an embodiment of the invention.

Fig. 5-1 to 5-4 are schematic cross-sectional views illustrating a method for fabricating a patterned photosensitive layer according to an embodiment of the invention.

Description of reference numerals:

10. a roller;

11. a holographic plate;

12. seaming;

20. a material;

21. hologram grain pattern;

22. a gap;

100. a metal roller;

200. a photoresist layer;

201. patterning the photoresist layer;

202. a first patterned photosensitive adhesive layer;

l, line width;

s, line distance;

H. depth;

s100, forming a photoresist layer on the metal roller;

s101, performing a photolithography process on the photoresist layer to pattern the photoresist layer into a patterned photoresist layer;

s102, applying an electric field to the metal roller, and carrying out an anisotropic etching step by using the patterned photoresist layer as a shield so as to etch the pattern on the metal roller;

s103, removing the patterned photoresist layer.

Detailed Description

The following detailed description of the embodiments of the invention is provided in connection with the accompanying drawings. Aside from the details given herein, this invention is capable of broad application to other embodiments and that various other substitutions, modifications, and equivalents may be made in the embodiments without departing from the scope of the invention as defined by the appended claims. In the description of the specification, numerous specific details are set forth in order to provide a more thorough understanding of the invention; however, the present invention may be practiced without some or all of these specific details. In other instances, well-known steps or elements have not been described in detail so as not to unnecessarily obscure the present invention. The same or similar components in the drawings will be denoted by the same or similar symbols. It is noted that the drawings are merely schematic and do not represent actual sizes or quantities of elements, and some details may not be fully drawn for brevity of the drawings.

The invention provides a seamless hologram pattern transfer method for forming a pattern on a metal roller, which comprises the following steps: a photoresist layer is formed on the metal roller in a proper manner, then the photoresist layer is patterned, and then the pattern on the photoresist layer is transferred to the metal roller. The detailed description is as follows.

Referring to fig. 4 and fig. 5-1 to 5-4, fig. 4 is a schematic flow chart illustrating a seamless hologram pattern transfer method according to an embodiment of the invention; and fig. 5-1 to 5-4 are schematic cross-sectional views illustrating a manufacturing method according to an embodiment of the present invention. First, referring to fig. 4 and 5-1, a metal roller 100 is provided, in an embodiment, the metal roller is a cylindrical metal roller, wherein the material of the metal roller includes, but is not limited to, stainless steel. In an appropriate manner, a photoresist layer 200 is formed on the metal roller 100 (step S100). Next, a photolithography process (lithography) is performed on the photoresist layer 200 to pattern the photoresist layer 200 into a patterned photoresist layer 201 (step S101), it is understood that the photolithography process includes exposure and development steps, which are not described herein again. In one embodiment, referring to fig. 5-2, in the photolithography process, the ratio of a line width L of the pattern to a line spacing S is 1, and in another embodiment, the line width L of the pattern may range from 0.1 micrometer (um) to 1.5 micrometer (um) and the line spacing S may range from 0.1 micrometer (um) to 1.5 micrometer (um) according to different pattern designs.

Referring to fig. 5-3, an electric field is applied to the metal roller 100, and an anisotropic etching step is performed using the patterned photoresist layer 201 as a mask to etch a pattern on the metal roller 100 (step S102). In one embodiment, the anisotropic etching step includes, but is not limited to, an electrochemical-mechanical Etching (ECM) step. In another embodiment, the maximum depth H of the pattern etched on the metal roller is between 0.1 micrometer (um) and 2 micrometers (um). Finally, the patterned photoresist layer is removed (step S103), and the structure after removal is shown in FIG. 5-4. The invention directly engraves the pattern on the metal roller, thereby effectively reducing the cost.

According to the above, the seamless hologram pattern transfer method of the present invention uses a coating method to form the photoresist, and does not use an electroplating process, thereby reducing the processing time and cost. The final seamless hologram product (end product) can use film-to-film (film-to-film) hot pressing process to effectively achieve the seamless purpose.

In summary, the seamless hologram pattern transfer method of the present invention directly transfers the pattern to the metal roller by etching, so as to achieve the optimization of yield and cost.

The above-mentioned embodiments are merely illustrative of the technical spirit and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the invention, so that the scope of the claims of the present invention should not be limited by the above-mentioned embodiments, and all equivalent changes and modifications made in the spirit of the present invention should be covered by the scope of the claims of the present invention.

Claims

1. A seamless hologram pattern transfer method for forming a pattern on a metal roller, comprising the steps of:

forming a photoresist layer on the metal roller;

performing a photolithography process on the photoresist layer to pattern the photoresist layer into a patterned photoresist layer;

applying an electric field to the metal roller, and performing an anisotropic etching step by using the patterned photoresist layer as a mask to etch the pattern on the metal roller; and

removing the patterned photoresist layer.

2. The method as claimed in claim 1, wherein in the step of photolithography, a ratio of a line width to a line pitch of the pattern is 1.

3. The method according to claim 2, wherein the line width is 0.1 to 1.5 μm and the line pitch is 0.1 to 1.5 μm.

4. The method according to claim 1, wherein the anisotropic etching step is an electrochemical process etching step.

5. The method according to claim 1, wherein the pattern is etched on the metal roller to a maximum depth of 0.1-2 μm.

6. The method according to claim 1, wherein the metal roller is made of stainless steel.