CN113628982A - Packaging mold and preparation method thereof - Google Patents

Packaging mold and preparation method thereof Download PDF

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Publication number
CN113628982A
CN113628982A CN202110900820.6A CN202110900820A CN113628982A CN 113628982 A CN113628982 A CN 113628982A CN 202110900820 A CN202110900820 A CN 202110900820A CN 113628982 A CN113628982 A CN 113628982A
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packaging
metal layer
coating
mold
layer
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Inventor
李庆超
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Nashi New Materials Co ltd
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Nashi New Materials Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The application relates to a packaging mold with a self-adjusting anti-sticking coating and a preparation method of the packaging mold. The application provides a packaging mold, it includes: an encapsulation film substrate and a coating. The coating is disposed on a portion of a surface of the packaging film substrate, wherein the coating includes a metal layer having a columnar crystal structure, and the metal layer includes one of copper or chromium. The packaging structure can effectively reduce the adhesion between the packaging material and the surface of the die-filling substrate, thereby improving the stability of the packaging process and the yield of products.

Description

Packaging mold and preparation method thereof
Technical Field
The application relates to the technical field of packaging processes and coatings, in particular to a packaging mold with an anti-sticking coating.
Background
One of the problems faced by current packaging molds during the use of packaging process is that the packaging material and the mold surface are easily adhered to each other. The encapsulant (e.g., epoxy) is most likely a non-newtonian fluid with a high viscosity coefficient, which tends to form sticky residues with the surface of the encapsulant mold. The residual encapsulating material on the mold not only affects the stability of the encapsulating process, but also the appearance of the product, and even the performance of the product in some high-precision sealing processes.
With the rise of the LED industry, the development and application of the packaging material containing silicon (Si) glue is increased, and compared with the traditional resin, the packaging material containing silicon (Si) glue is more likely to adhere to the surface of the packaging mold. Therefore, further research and improvement on the surface or coating of the packaging mold are needed.
Disclosure of Invention
The application provides a packaging mold with a self-adjusting anti-sticking coating and a preparation method of the packaging mold, wherein the self-adjusting anti-sticking coating is a copper layer or a chromium layer with a columnar crystal structure, and can form a tightly combined structure with the surface of a packaging mold base body, so that sticking of a packaging material and the surface of the packaging mold base body is effectively reduced, and the stability of a packaging process and the yield of products are improved.
According to one aspect of the present application, there is provided an encapsulation mold, including: an encapsulation film substrate and a coating. The coating is disposed on a portion of a surface of the substrate, wherein the coating comprises a metal layer having a columnar crystal structure, and the metal layer comprises one of copper or chromium.
In some embodiments, the coating further comprises an oxide layer disposed on the surface of the metal layer, the oxide layer being one of copper oxide or chromium oxide.
In some embodiments, the oxide layer has a thickness of 100nm to 1 μm.
In some embodiments, the coating thickness is 2 μm to 10 μm.
In some embodiments, the columnar crystal structure of the metal layer has a cubic crystal structure, and the crystal structure belongs to a body-centered cubic structure.
In some embodiments, the grain size of the columnar crystal structure of the metal layer is 30nm to 100 nm.
According to another aspect of the present application, there is provided a method of manufacturing a package mold, including the steps of: providing a packaging film substrate and forming a metal layer with a columnar crystal structure on the surface of the packaging film substrate by adopting a magnetron sputtering process, wherein the metal layer contains one of copper or chromium.
In some embodiments, the bias voltage used in the magnetron sputtering process is 30V to 100V, and the target power is 5Kw to 15 Kw.
In some embodiments, the closed chamber furnace in the magnetron sputtering process has a gas pressure of 0.1Pa to 1Pa and a sputter deposition time of 40 minutes to 120 minutes.
In some embodiments, after forming the metal layer, the method further comprises the steps of: and placing the packaging mold in a pure oxygen environment to form an oxide layer on the surface of the metal layer, wherein the oxide layer is one of copper oxide or chromium oxide.
In some embodiments, the temperature in the oxygen-containing environment is 75 ℃ to 90 ℃.
In some embodiments, after the step of providing the encapsulation film substrate and before the step of forming the metal layer, the method further comprises the step of cleaning the surface of the encapsulation film substrate with argon ions, wherein the step of cleaning with argon ions comprises the following steps: argon is introduced into a closed chamber furnace, a bias voltage of 100V to 800V is applied, and the surface of the packaging film substrate is cleaned.
The application provides a packaging mold with anti gluing coating of being stained with of self-interacting, the metallic copper layer or the metallic chromium layer that have the column crystal structure that form through magnetron sputtering technology can form inseparable coating structure to its column crystal structure has typical growth preferred, is favorable to the diffusion of oxygen element in the air, thereby can form stable metal oxide layer at coating surface layer self-interacting, and reduced the interfacial energy on coating surface, helps anti gluing effect. Therefore, when the packaging mold with the self-adjusting anti-sticking coating is used for a packaging process, the stability of the packaging process and the product quality can be effectively improved.
Additional aspects and advantages of embodiments of the present application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the present application.
Drawings
Drawings necessary for describing embodiments of the present application or the prior art will be briefly described below in order to describe the embodiments of the present application. It is to be understood that the drawings in the following description are only some of the embodiments of the present application. It will be apparent to those skilled in the art that other embodiments of the drawings can be obtained from the structures illustrated in these drawings without the need for inventive work.
Fig. 1 is a cross-sectional schematic view of an encapsulation mold according to some embodiments of the present application.
Fig. 2 is a cross-sectional electron microscope view of a coating of an encapsulation mold according to an embodiment of the present application.
Fig. 3 is a top electron microscope view of a coating of an encapsulation mold according to an embodiment of the present application.
Fig. 4 is a cross-sectional schematic view of an encapsulation mold according to some embodiments of the present application.
FIG. 5 is a cross-sectional electron microscope view of a coating of an encapsulation mold according to one embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in detail below. Throughout the specification, the same or similar components and components having the same or similar functions are denoted by like reference numerals. The embodiments described herein with respect to the figures are illustrative in nature, are diagrammatic in nature, and are used to provide a basic understanding of the present application. The embodiments of the present application should not be construed as limiting the present application.
As used herein, the terms "about", "substantially", "essentially" are used to describe and describe small variations. When used in conjunction with an event or circumstance, the terms can refer to both an instance in which the event or circumstance occurs precisely as well as an instance in which the event or circumstance occurs in close proximity. For example, when used in conjunction with numerical values, the terms can refer to a range of variation of less than or equal to ± 10% of the numerical value, such as less than or equal to ± 5%, less than or equal to ± 0.5%, or less than or equal to ± 0.05%. For example, two numerical values may be considered "substantially" the same if the difference between the two numerical values is less than or equal to ± 10% of the mean of the values.
In the packaging process, one of the main problems encountered by the currently used packaging mold is how to prevent the packaging material from adhering to the surface of the packaging mold, and the adhesion between the packaging material and the surface of the packaging mold can cause part of the packaging material to remain on the surface of the packaging mold, thereby affecting the stability of the packaging process, and in severe cases, can cause the defects of the packaged product. Therefore, the application provides a packaging mold with an anti-sticking coating, which is used for effectively improving the stability of the packaging process and the product quality in the packaging process.
Fig. 1 is a schematic cross-sectional view of an encapsulation mold 10 according to some embodiments of the present application.
According to one aspect of the present application, there is provided an encapsulation mold. As shown in fig. 1, the package mold 10 includes: encapsulating film base 101 and coating 102. The coating 102 is disposed on a portion of the surface of the substrate 101, wherein the coating includes a metal layer 102A having a columnar crystal structure, and the metal layer 102A is a metal copper layer or a metal chromium layer.
Fig. 2 and 3 are cross-sectional and top electron microscope views, respectively, of a coating of an encapsulation mold according to one embodiment of the present application.
As shown in fig. 2, a metallic copper layer or a metallic chromium layer 102A having a columnar crystal structure can form a stable coating structure closely combined with the surface of the package mold 101. As shown in fig. 3, the coating surface of the columnar crystal structure can form a dense dot structure, and the dot structure of the metal copper layer or the metal chromium layer can effectively reduce the interfacial energy of the coating surface, thereby reducing the sticking condition between the packaging material and the coating.
In some embodiments, the crystal structure of the columnar crystal structure of the metallic copper layer or the metallic chromium layer is a cubic system, the crystal structure belongs to a body-centered cubic structure, and the columnar crystal structure of the cubic system has a tighter coating structure and a smoother coating surface structure. In some embodiments, the grain size of the columnar crystal structure of the metallic copper layer or the metallic chromium layer is 30nm to 100nm, so as to optimize the arrangement of the coating structure and the coating surface structure and improve the anti-sticking effect of the coating.
In some embodiments, the thickness of the coating is 2 μm to 10 μm, and within this thickness range, the prepared metal layer has excellent bonding force with the substrate of the encapsulation mold, and the coating has good structural strength.
Fig. 4 is a cross-sectional schematic view of an encapsulation mold 20 according to some embodiments of the present application.
As shown in fig. 4, in some embodiments, the coating 102 can further include an oxide layer 102B disposed on the surface of the metal layer, the oxide layer 102B being a copper oxide layer or a chromium oxide layer.
Fig. 5 is a cross-sectional electron microscope image of a metallic copper coating with a columnar grain structure of an encapsulation mold according to one embodiment of the present application.
As shown in fig. 5, since the metallic copper layer 102A with a columnar crystal structure has a typical growth preference, it is advantageous for the oxygen element in the air to diffuse in the columnar crystal structure. Therefore, the metal copper layer with the columnar crystal structure can form a metal oxide layer 102B on the coating surface, and the metal oxide layer 102B (copper oxide layer) has lower interfacial energy, which can further reduce the adhesion between the packaging material and the coating. In some embodiments of the present disclosure, the metal chromium layer with a columnar crystal structure can also form a metal oxide layer on the surface of the coating, and the chromium oxide layer has a lower interfacial energy, which can further reduce the adhesion between the packaging material and the coating.
Although the metal oxide layer has a dense structure, the transient oxidation may cause the columnar crystal structure in the metal layer to be damaged, thereby affecting the structural stability of the whole coating. In some embodiments, the thickness of the oxide layer is 100nm to 1 μm, so as to improve the bonding force between the oxide layer and the metal layer, thereby improving the overall structural strength of the coating. In some embodiments, the oxide layer has a thickness of less than or equal to 0.8 μm.
According to another aspect of the present application, there is provided a method of manufacturing a package mold, including the steps of: providing a packaging film substrate and forming a metal layer with a columnar crystal structure on the surface of the packaging film substrate by adopting a magnetron sputtering process, wherein the metal layer contains one of copper or chromium.
In some embodiments, the bias voltage used in the magnetron sputtering process is 30V to 100V, and the target power is 5Kw to 15 Kw.
In some embodiments, the closed chamber furnace in the magnetron sputtering process has a gas pressure of 0.1Pa to 1Pa and a sputter deposition time of 40 minutes to 120 minutes.
In some embodiments, after forming the metal layer, the method further comprises the steps of: and placing the packaging mold in an oxygen-containing environment to form an oxide layer on the surface of the metal layer, wherein the oxide layer is one of copper oxide or chromium oxide.
In some embodiments, the temperature in the oxygen-containing environment is 75 ℃ to 90 ℃ to reduce the time for the formation of the oxide layer and to improve the structural strength of the oxide layer.
In some embodiments, the oxygen-containing ambient may be pure oxygen ambient to further form a more compact oxide layer structure.
In some embodiments, the thickness of the metal oxide layer can be controlled by adjusting the oxygen content, temperature and oxidation time in the oxidation environment. In some embodiments, after the oxidation step, the metal oxide layer is placed in an atmospheric environment and at a normal temperature, the metal oxide layer can form a stable structure with a fixed thickness and compactness, and can effectively prevent the metal layer from contacting with an oxidizing component in the atmosphere to prevent the metal in the metal layer from being oxidized continuously, so that a double-layer structure of the metal layer and the metal oxide layer in the coating is maintained, and the coating has good structural stability and long service life. In some embodiments, after the step of providing the encapsulation film substrate and before the step of forming the metal layer, the method further comprises the step of cleaning the surface of the encapsulation film substrate with argon ions, wherein the step of cleaning with argon ions comprises the following steps: argon is introduced into a closed chamber furnace, a bias voltage of 100V to 800V is applied, and the surface of the packaging film substrate is cleaned. The argon plasma cleaning of the surface of the packaging mold base can improve the bonding strength of the metal layer and the surface of the packaging mold base.
The preparation method of the application adopts the magnetron sputtering process, the metal copper layer or the metal chromium layer with the specific columnar crystal structure can be formed by controlling the bias range and the power in the magnetron sputtering process, and the metal copper layer or the metal chromium layer and the packaging mold base body form a compact coating structure, and the columnar crystal structure has typical growth preference and is beneficial to the diffusion of oxygen elements in air, so that a stable metal oxide layer can be formed on the surface layer of the coating in a self-adjusting manner, the interface energy of the surface of the coating is reduced, and the anti-sticking effect is facilitated.
To further illustrate the beneficial effects of the self-regulating anti-stiction coating encapsulation mold of the present application, the present application provides the following embodiments and the results of the adhesion force and high temperature contact angle tests:
example 1
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then closing the cleaning power supply, opening the copper target material, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 80 min.
And then, cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, basically detecting no surface oxidation layer, measuring the metal layer to be 7 microns, measuring the bonding force between the coating and the substrate to be 80N, and measuring the contact angle between the surface of the die and the resin to be 60 +/-5 ℃ by a high-temperature contact angle measuring instrument.
Example 2
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then closing the cleaning power supply, opening the copper target material, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 80 min.
Subsequently, the prepared mold was furnace-cooled to 80 ℃ in vacuum, and then high-purity oxygen was introduced for a set time of 90 min. And cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, wherein the surface oxidation layer is 1.5 mu m, the metal layer is 7 mu m, the bonding force between the coating and the substrate is 30N, and measuring the contact angle between the surface of the die and the resin to be 75 +/-5 degrees by a high-temperature contact angle measuring instrument.
Example 3
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then closing the cleaning power supply, opening the copper target material, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 80 min.
Subsequently, the prepared mold was furnace-cooled to 80 ℃ in vacuum, and then high-purity oxygen was introduced for a set time of 40 min. And cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, wherein the surface oxidation layer is 0.8 mu m, the metal layer is 7 mu m, the bonding force between the coating and the substrate is 60N, and measuring the contact angle between the surface of the die and the resin to be 85 +/-5 ℃ by a high-temperature contact angle measuring instrument.
Example 4
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then, closing the cleaning power supply, opening the copper target, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 120 min.
Subsequently, the prepared mold was furnace-cooled to 80 ℃ in vacuum, and then high-purity oxygen was introduced for a set time of 40 min. And cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, wherein the surface oxidation layer is 0.8 mu m, the metal layer is 10 mu m, the bonding force between the coating and the substrate is 55N, and measuring the contact angle between the surface of the die and the resin to be 84 +/-5 degrees by a high-temperature contact angle measuring instrument.
Example 5
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then, closing the cleaning power supply, opening the copper target, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 160 min.
Subsequently, the prepared mold was furnace-cooled to 80 ℃ in vacuum, and then high-purity oxygen was introduced for a set time of 40 min. And cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, wherein the surface oxidation layer is 0.8 mu m, the metal layer is 12 mu m, the bonding force between the coating and the substrate is 40N, and measuring the contact angle between the surface of the die and the resin to be 80 +/-5 degrees by a high-temperature contact angle measuring instrument.
Example 6
Uniformly loading the pretreated uncoated die on a coating machine rotating stand, adjusting the rotating speed of the stand to 5rpm, and sealing the furnace chamber. When the closed furnace chamber is vacuumized to reach 3x10-3And when Pa, turning on a heater, heating to 500 ℃, introducing argon, turning on an ion cleaning power supply, setting the bias voltage to 600V, and cleaning the substrate by using argon plasma for 40 minutes. And then closing the cleaning power supply, opening the copper target material, introducing nitrogen until the air pressure of the closed furnace chamber is 0.5Pa, setting the power to be 12Kw, biasing the substrate to be 60v, and depositing a copper metal layer for 30 min.
Subsequently, the prepared mold was furnace-cooled to 80 ℃ in vacuum, and then high-purity oxygen was introduced for a set time of 40 min. And cooling the prepared die, discharging the die, measuring the thickness of the film by a film thickness ball mill, wherein the surface oxidation layer is 0.8 mu m, the metal layer is 2 mu m, the bonding force between the coating and the substrate is 50N, and measuring the contact angle between the surface of the die and the resin to be 76 +/-5 degrees by a high-temperature contact angle measuring instrument.
And (3) testing the binding force:
a scratch tester (model: WS-2005, Kyowa Kagaku technologies, Inc. of Kyowa, Lanzhou) is used for testing the bonding force, and the specific test parameters are as follows: the load was 100N, the scratch rate was 2mm/min, the load rate was 100N/min and the scratch length was 2 mm. And placing the sample in a scratch tester, locking and fixing the sample, and adjusting the position of a pointer and the force applied. The load pressure was then gradually increased until the coating was scratched off and a scratch exposing the substrate was generated, and the force applied by the pointer at the time of scratch generation was recorded to obtain the bonding force of the coating of the sample to the substrate.
High temperature contact angle test:
a high-temperature contact angle measuring instrument is adopted, the coating to be measured is horizontally placed in the high-temperature contact angle measuring instrument, and a static contact angle of the coating is measured by adopting resin (the model is CYD-128 epoxy resin) at the temperature of 60 ℃.
TABLE 1
Figure BDA0003199748330000081
According to the test result, the packaging mold with the anti-sticking coating can effectively reduce the interfacial energy on the surface of the packaging mold, can reach a contact angle of more than 60 +/-5 degrees in a contact angle test of packaging resin, can even improve the surface contact angle of the packaging mold with the coating of the oxidation layer to 85 +/-5 degrees, and has a certain binding force with the packaging mold. In addition, through the thickness of control surface oxide layer, can consequently, the encapsulation mould of this application can effectively reduce encapsulating material and its surperficial be stained with and glue. The packaging mold with the self-adjusting anti-sticking coating is used for a packaging process, and the stability and the product quality of the packaging process can be effectively improved.
Reference throughout this specification to "some embodiments," "one embodiment," "another example," "an example," "a specific example," or "some examples" means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. Thus, throughout the specification, descriptions appear, for example: "in some embodiments," "in an embodiment," "in one embodiment," "in another example," "in one example," "in a particular example," or "by example," which do not necessarily refer to the same embodiment or example in this application. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.
Although illustrative embodiments have been illustrated and described, it will be appreciated by those skilled in the art that the above embodiments are not to be construed as limiting the application and that changes, substitutions and alterations can be made to the embodiments without departing from the spirit, principles and scope of the application.

Claims (12)

1. A packaging mold, comprising:
packaging the film substrate; and
a coating disposed on a portion of a surface of the encapsulation film substrate, wherein the coating comprises a metal layer having a columnar crystal structure, and the metal layer comprises one of copper or chromium.
2. The packaging mold of claim 1, wherein the coating further comprises an oxide layer disposed on a surface of the metal layer, the oxide layer being one of copper oxide or chromium oxide.
3. The packaging mold of claim 2, wherein the oxide layer has a thickness of 100nm to 1 μ ι η.
4. The encapsulation mold of any of claims 1-3, wherein the coating thickness is 2 μ ι η to 10 μ ι η.
5. The packaging mold according to any one of claims 1 to 3, wherein a crystal structure of the columnar crystal structure of the metal layer is a cubic system, the crystal structure belonging to a body-centered cubic structure.
6. The packaging mold of any of claims 1 to 3, wherein the grain size of the columnar crystalline structure of the metal layer is 30nm to 100 nm.
7. A preparation method of a packaging mold comprises the following steps:
providing an encapsulation film substrate; and
and forming a metal layer with a columnar crystal structure on the surface of the packaging film substrate by adopting a magnetron sputtering process, wherein the metal layer contains one of copper or chromium.
8. The method for manufacturing a package mold according to claim 7, wherein the bias voltage used in the magnetron sputtering process is 30V to 100V, and the target power is 5Kw to 15 Kw.
9. The method for preparing a packaging mold according to claim 7, wherein the pressure of the closed chamber furnace in the magnetron sputtering process is 0.1Pa to 1Pa, and the sputtering deposition time is 40 minutes to 120 minutes.
10. The method for preparing a package mold according to claim 7, further comprising the steps of, after forming the metal layer: and placing the packaging mold in an oxygen-containing environment to form an oxide layer on the surface of the metal layer, wherein the oxide layer is one of copper oxide or chromium oxide.
11. The method of making an encapsulation mold according to claim 10, wherein the temperature in the oxygen containing environment is 75 ℃ to 90 ℃.
12. The method for preparing an encapsulation mold according to any one of claims 7 to 11, wherein after the step of providing the encapsulation film base and before the step of forming the metal layer, further comprising cleaning a surface of the encapsulation film base with argon ions, the step of cleaning with argon ions comprising the steps of:
and introducing argon gas into a closed chamber furnace, applying a bias voltage of 100V to 800V, and cleaning the surface of the packaging film substrate.
CN202110900820.6A 2021-08-06 2021-08-06 Packaging mold and preparation method thereof Pending CN113628982A (en)

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