CN113624999B - Low-quality factor micro-cantilever probe, preparation method thereof and microscope - Google Patents
Low-quality factor micro-cantilever probe, preparation method thereof and microscope Download PDFInfo
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- CN113624999B CN113624999B CN202110901520.XA CN202110901520A CN113624999B CN 113624999 B CN113624999 B CN 113624999B CN 202110901520 A CN202110901520 A CN 202110901520A CN 113624999 B CN113624999 B CN 113624999B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
- G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
Abstract
The invention provides a low-quality factor micro-cantilever probe which is an AM-AFM and/or SNOM micro-cantilever probe. Also provides a preparation method of the low-quality factor micro-cantilever probe and a microscope. The micro-nano structure is processed on the cantilever beam of the micro-cantilever probe by utilizing the micro-processing means, structural defects are introduced, the intrinsic energy dissipation rate of the micro-cantilever probe is increased, the quality factor Q of the micro-cantilever probe is reduced, and the imaging rate of the AM-AFM and the SNOM in a vacuum environment can be effectively improved.
Description
Technical Field
The invention belongs to the technical field of scanning probe microscopes, and particularly relates to a low-quality factor micro-cantilever probe and a preparation method thereof.
Background
The microcantilever probe is a mechanical sensing element of an amplitude modulated atomic force microscope (Amplitude Modulation Atomic Force Microscope, AM-AFM). When the AM-AFM is in operation, the microcantilever probe vibrates around its natural frequency, and its amplitude is maintained at a constant value by a closed loop feedback control system by adjusting the spacing between the probe tip and the sample in real time. The morphology information of the sample surface can be obtained by two-dimensionally scanning the probe tip on the sample surface. Meanwhile, the micro-cantilever probe is also an optical sensing element of a Scanning Near-field optical microscope (Scanning Near-Field Optical Microscope, SNOM) based on AM-AFM. When the probe vibrates, the distance between the tip and the sample changes periodically, and the near-field optical signal of the sample surface scattered by the tip of the probe is modulated periodically. Because the dependence of near field optical signal strength on probe tip-sample surface spacing is nonlinear, the near field optical signal to the photodetector contains higher harmonic components of the probe vibration frequency. The near-field optical imaging of the sample surface can be realized by extracting the higher harmonic signals by using a lock-in amplifier.
In the AM-AFM and SNOM scanning imaging process, the amplitude of the micro-cantilever probe can change along with the change of the surface morphology of the sample, and the controller carries out feedback adjustment by sensing the change of the amplitude so as to maintain the probe amplitude at a set value. The time required for this feedback adjustment process is proportional to the quality factor Q of the microcantilever probe. In gas phase and liquid phase environments, larger medium damping is a main way for probe vibration energy dissipation, and the Q value of the probe is smaller; while in a vacuum environment, the smaller intrinsic energy dissipation of the probe results in a larger Q value. In summary, to increase the imaging rate of AM-AFM and SNOM in vacuum environments, we have to use microcantilever probes with low intrinsic quality factors.
Disclosure of Invention
Therefore, the invention aims to overcome the defects in the prior art and provide a low-quality factor micro-cantilever probe and a preparation method thereof aiming at the requirements of improving scanning imaging rate of vacuum AM-AFM and vacuum-low temperature SNOM.
Before setting forth the present disclosure, the terms used herein are defined as follows:
the term "AM-AFM" refers to: amplitude modulation type atomic force microscope.
The term "SNOM" refers to: scanning near field optical microscopy based on amplitude modulation atomic force microscopy.
To achieve the above object, a first aspect of the present invention provides a low quality factor micro-cantilever probe, which is an AM-AFM and/or SNOM micro-cantilever probe;
preferably, the AM-AFM and/or SNOM is vacuum AM-AFM and/or vacuum-low temperature SNOM; and/or
Preferably, the raw materials of the micro-cantilever probe are as follows: bulk probes or whole wafers that are not singulated.
The low quality factor micro-cantilever probe according to the first aspect of the present invention, wherein the amplitude response time of the micro-cantilever probe is a key factor limiting the AM-AFM and SNOM imaging rates, the response time of the micro-cantilever probe amplitude is given by the following formula:
wherein Q is the quality factor omega of the micro-cantilever probe 0 Is the natural angular frequency of the probe;
preferably, the quality factor Q of the micro-cantilever probe determines the imaging rate of AM-AFM and SNOM; and/or
More preferably, the quality factor Q of the microcantilever probe is dependent on the dissipation rate of the microcantilever probe vibration energy;
further preferably, the faster the dissipation rate of the vibration energy of the micro-cantilever probe, the smaller the quality factor Q of the micro-cantilever probe.
A second aspect of the present invention provides a method for preparing the low quality factor microcantilever probe as described in the first aspect, the method comprising: processing a micro-nano structure on a cantilever beam of a micro-cantilever probe by utilizing a micro-processing technology, introducing structural defects, increasing the dissipation rate of the vibration energy of the micro-cantilever probe, and reducing the quality factor Q of the micro-cantilever probe so as to obtain the low-quality factor micro-cantilever probe;
preferably, the micromachining process is: laser direct writing or focused ion beam etching; and/or
The micro-nano structure is selected from one or more of the following: through holes, blind holes, surface engraving and/or hollowed-out characters and lines.
The preparation method according to the second aspect of the present invention, wherein when the micromachining process is laser direct writing, the process includes the steps of:
(1) Designing a processing drawing, and transmitting the drawing to a laser processing control system;
(2) Horizontally placing and fixing a probe to be processed in a processing table, and adjusting the horizontal and vertical positions of the probe through a displacement table to enable a cantilever beam to be processed site of the probe to be aligned with a cross wire of a microscope;
(3) The laser processing is started after adjusting typical parameters of laser processing of the laser.
According to the preparation method of the second aspect of the invention, in the step (1), software used by the design processing drawing is selected from one or more of the following: CAD, soildworks, CAXA.
The preparation method according to the second aspect of the present invention, wherein in the step (3), the laser processing typical parameters include: laser wavelength, repetition frequency, power, scanning speed, and scanning times; wherein, the liquid crystal display device comprises a liquid crystal display device,
the laser wavelength is 355nm;
the repetition frequency is 30-50kHz, preferably 30-45kHz, more preferably 35-45kHz, most preferably 40kHz;
the power is 10-30W, preferably 10-25W, more preferably 10-20W, most preferably 15W;
the scanning speed is 100-400mm/s, preferably 100-300mm/s, more preferably 100-250mm/s, most preferably 200mm/s; and/or
The number of scans is 1 to 3, preferably 1 to 2, most preferably 1.
The preparation method according to the second aspect of the present invention, wherein, when the micromachining process is focused ion beam lithography, the process includes the steps of:
(1) Designing an etching layout;
(2) The layout is imported to a focused ion beam control system, and the length and width of the etching pattern are set in the control system;
(3) Fixing a probe to be processed on a sample stage etched by an ion beam by using conductive adhesive, and adjusting the horizontal position of the probe by using a displacement stage;
(4) Typical parameters of focused ion beam etching are set, the sample surface is adjusted to the focus plane of the ion beam, and etching is started.
The preparation method according to the second aspect of the present invention, wherein, in the step (2), the length of the pattern is 60 to 150um, preferably 80 to 120um; the width of the pattern is 10-60um, preferably 20-40um; and/or
In the step (3), the conductive adhesive is: carbon tape or copper tape.
The preparation method according to the second aspect of the present invention, wherein, in the step (4), typical parameters of the focused ion beam etching include: etching voltage, etching beam current, etching depth and residence time; wherein, the liquid crystal display device comprises a liquid crystal display device,
the etching voltage is 10-50kV, preferably 10-40kV, more preferably 20-40kV, and most preferably 30kV;
the etching beam current is 5-30nA, preferably 5-25nA, more preferably 5-20nA, and most preferably 10nA;
the etching depth is 100-400nm, preferably 100-300nm, more preferably 100-250nm, and most preferably 200nm; and/or
The residence time is 0.1 to 4. Mu.s, preferably 0.1 to 3. Mu.s, more preferably 0.1 to 2. Mu.s, most preferably 1. Mu.s.
A third aspect of the present invention provides a microscope which is an amplitude modulated atomic force microscope or a scanning near field optical microscope based on an amplitude modulated atomic force microscope, and the mechanical sensing element of the microscope is a low quality factor micro-cantilever probe prepared according to the method of the second aspect or a low quality factor micro-cantilever probe according to the first aspect.
The invention aims at the requirements of improving scanning imaging rate of vacuum AM-AFM and vacuum-low temperature SNOM, and provides a method for preparing a low-quality factor probe by introducing structural defects on a cantilever beam of a micro-cantilever probe through a micro-machining means so as to increase the intrinsic energy dissipation rate of the micro-cantilever probe.
The principle of the invention is that micro-nano structures (through holes, blind holes, surface engraving and/or hollowed-out characters, lines or other arbitrary patterns) are processed on the cantilever beams of the micro-cantilever probe by utilizing micro-processing means such as laser direct writing, focused Ion Beam etching (FIB) and the like, structural defects are introduced, the intrinsic energy dissipation rate of the micro-cantilever probe is increased, and the quality factor Q of the micro-cantilever probe is reduced.
According to a specific embodiment of the present invention, a method for preparing a low quality factor probe by introducing structural defects on a cantilever beam of a micro-cantilever probe by micro-machining means to increase the intrinsic energy dissipation rate of the micro-cantilever probe is provided.
The raw material used in the invention is an AM-AFM or SNOM micro-cantilever probe. Either bulk probes or whole wafers that are not singulated.
In particular, since the response rate of the circuit portion in the feedback loop is much greater than that of the mechanical portion, the dynamic response time of the microcantilever probe becomes a critical factor limiting the AM-AFM and SNOM imaging rates. The response time of the amplitude of the microcantilever probe is given by,
wherein Q is the Quality Factor (Q), ω of the probe 0 Is the natural angular frequency of the probe. As can be seen, the Q of the microcantilever probe determines the imaging rate of the AM-AFM and SNOM. The Q value depends on the dissipation rate of probe vibration energy: the faster the energy dissipation, the smaller the Q.
Specifically, when the micromachining process is a laser direct writing process, the process steps are as follows:
(1) The drawing is designed and processed by CAD, and is transmitted to a laser processing control system, wherein the micro-nano structure of the drawing is a through hole;
(2) Horizontally placing and fixing a probe to be processed in a processing table, and adjusting the horizontal and vertical positions of the probe through a displacement table to enable a cantilever beam to be processed site of the probe to be aligned with a cross wire of a microscope;
(3) After adjusting the parameters of the laser, the processing is started, the wavelength of the laser is 355nm, the repetition frequency is 40kHz, the power is 15W, and the scanning speed is 200mm/s.
When the micromachining process is a focused ion beam etching process, the process steps are as follows:
(1) Designing and etching a layout, wherein the micro-nano structure of the layout is characters;
(2) The layout is imported to a focused ion beam control system, and the length and width of the etching pattern are set in the control system;
(3) Fixing a probe to be processed on a sample stage etched by an ion beam by using conductive adhesive, and adjusting the horizontal position of the probe by using a displacement stage;
(4) Setting working parameters of an ion beam, adjusting the surface of a sample to the focusing surface of the ion beam, starting etching, wherein the etching voltage is 30kV, the etching beam current is 10nA, the etching depth is 200nm, and the residence time is 1 mu s.
The low quality factor microcantilever probes of the present invention may have, but are not limited to, the following benefits:
1. the preparation method of the low-quality factor micro-cantilever probe can effectively reduce the Q value of the micro-cantilever probe.
2. The low-quality factor micro-cantilever probe prepared by the preparation method can effectively improve the imaging rate of AM-AFM and SNOM in a vacuum environment.
Drawings
Embodiments of the present invention are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 shows a schematic diagram of a micro-nano structure of a typical laser direct writing process as a via.
Fig. 2 shows a schematic diagram of a micro-nano structure of a typical focused ion beam lithography process as text.
FIG. 3 shows a low quality factor micro-cantilever probe scanning electron microscope image; FIG. 3A is a view of a low-quality factor micro-cantilever probe Scanning Electron Microscope (SEM) with through holes ablated by a laser direct writing process; fig. 3B shows a low-q micro-cantilever probe scanning electron microscope image of text etched by a focused ion beam etching process.
FIG. 4 shows a graph of Q-value comparison before and after processing of a low quality factor microcantilever probe; wherein, FIG. 4A shows a graph of Q value contrast for a low quality factor microcantilever probe processed by a laser direct write process; fig. 4B shows a graph of Q versus Q for a low quality factor microcantilever probe processed by a focused ion beam etch process.
Detailed Description
The invention is further illustrated by the following specific examples, which are, however, to be understood only for the purpose of more detailed description and are not to be construed as limiting the invention in any way.
This section generally describes the materials used in the test of the present invention and the test method. Although many materials and methods of operation are known in the art for accomplishing the objectives of the present invention, the present invention will be described in as much detail herein. It will be apparent to those skilled in the art that in this context, the materials and methods of operation used in the present invention are well known in the art, if not specifically described.
The reagents and instrumentation used in the following examples were as follows:
materials:
AFM microcantilever probe, model Arrow NCPt, available from Nano World Co., switzerland.
SNOM microcantilever probe, model Arrow NCPt, available from Nano World Co., switzerland.
Conductive adhesive, available from SPI company, usa.
Instrument:
laser processing control system, model FP-D-DZS-001, available from sulzer laser company.
Focused ion beam control system, model Nova200NanoLab, available from sammer electron microscope, inc.
Example 1
The embodiment is used for explaining the preparation method of the laser direct writing process of the low-quality factor micro-cantilever probe.
The method comprises the following specific steps:
(1) And (3) processing the drawing by using CAD design, and transmitting the drawing to a laser processing control system, wherein the micro-nano structure of the drawing is a through hole.
(2) And horizontally placing the probe to be processed into a processing table and fixing, and adjusting the horizontal and vertical positions of the probe through a displacement table to enable the cantilever beam to be processed position to be aligned with the cross hair of the microscope.
(3) And according to typical laser processing parameters of the table 1, adjusting laser processing parameters of the laser and then processing to obtain the low-quality factor micro-cantilever probe.
Table 1 typical parameters for laser processing
| Wavelength of laser | 355nm |
| Repetition frequency | 40kHz |
| Power of | 15W |
| Scanning speed | 200mm/s |
| Number of scans | 1 time |
As shown in fig. 3A, fig. 3A shows a low quality factor micro-cantilever probe scanning electron microscope image of via holes ablated by a laser direct write process.
Example 2
The embodiment is used for explaining a preparation method of the focused ion beam etching process of the low-quality factor micro-cantilever probe.
The method comprises the following specific steps:
(1) And etching the layout by using Photoshop software design, wherein the micro-nano structure of the layout is a word.
(2) The layout is led into a focused ion beam control system, and the size of the etching pattern is set in the control system, wherein the length is 100um, and the width is 30um.
(3) And fixing the probe to be processed on a sample stage etched by the ion beam by using carbon conductive adhesive, and adjusting the horizontal position of the probe by using a displacement stage.
(4) The sample surface was adjusted to the focus plane of the ion beam and etching was started by setting the operating parameters according to the typical parameters of the focused ion beam etching process of table 2.
Table 2 typical parameters for focused ion beam etching process
| Etching voltage | 30kV |
| Etching beam | 10nA |
| Depth of etching | 200nm |
| Residence time | 1μs |
As shown in fig. 3B, fig. 3B shows a low-quality factor micro-cantilever probe scanning electron microscope image of characters etched by a focused ion beam etching process.
Test example 1
The test example is used for testing the quality factor Q value of the micro-cantilever probe of the low quality factor micro-cantilever probe.
The method comprises the following specific steps:
(1) The low-q microcantilever probe of example 1 was placed in a vacuum-low temperature environment (p=2.0×10) before laser direct writing -6 Pa, t=90K) and its Q value is tested; after laser direct writing, the substrate was placed in a vacuum-low temperature environment (p=2.0×10 -6 Pa, t=90K) and its Q value is tested; the test results are shown in fig. 4A.
(2) The low quality factor of example 2 was subjected to microsuspensionArm probe, put under vacuum-low temperature environment (p=2.0×10) before being subjected to focused ion beam etching -6 Pa, t=90K) and its Q value is tested; testing the Q value of the wafer after being etched by the focused ion beam in a vacuum-low temperature environment (P=2.0X10-6 Pa, T=90K); the test results are shown in fig. 4B.
From the measured data and fig. 4A and fig. 4B, it can be seen that the Q value of the micro-cantilever probe can be effectively reduced by the low-quality factor micro-cantilever probe prepared by the two methods of laser processing and focused ion beam etching.
Although the present invention has been described to a certain extent, it is apparent that appropriate changes may be made in the individual conditions without departing from the spirit and scope of the invention. It is to be understood that the invention is not to be limited to the described embodiments, but is to be given the full breadth of the claims, including equivalents of each of the elements described.
Claims (23)
1. A low-quality factor micro-cantilever probe, characterized in that the low-quality factor micro-cantilever probe is an AM-AFM and/or SNOM micro-cantilever probe;
the preparation method of the low-quality factor micro-cantilever probe comprises the following steps: and processing a micro-nano structure on the cantilever beam of the micro-cantilever probe by utilizing a micro-processing technology, introducing structural defects, increasing the dissipation rate of the vibration energy of the micro-cantilever probe, and reducing the quality factor of the micro-cantilever probe, thereby obtaining the low-quality factor micro-cantilever probe.
2. The low quality factor microcantilever probe of claim 1, in which the AM-AFM and/or SNOM is a vacuum AM-AFM and/or vacuum-low temperature SNOM.
3. The low quality factor microcantilever probe of claim 1, in which the raw materials of the microcantilever probe are: bulk probes or whole wafers that are not singulated.
4. The low-quality factor microcantilever probe as in any of claim 1 to 3,
the amplitude response time of the micro-cantilever probe is a key factor limiting the AM-AFM and SNOM imaging rates, and is obtained by the following formula:
wherein Q is the quality factor of the micro-cantilever probe, and ω0 is the natural angular frequency of the probe.
5. The low-Q microcantilever probe of claim 4, in which Q determines AM-AFM and SNOM imaging rates.
6. The low quality factor microcantilever probe of claim 5, in which the quality factor Q of the microcantilever probe is dependent on the dissipation rate of the microcantilever probe vibration energy.
7. The low quality factor microcantilever probe of claim 6, in which the faster the rate of dissipation of the microcantilever probe vibration energy, the smaller the quality factor Q of the microcantilever probe.
8. The method of preparing a low quality factor microcantilever probe as in any of claims 1 to 7, which comprises: and processing a micro-nano structure on the cantilever beam of the micro-cantilever probe by utilizing a micro-processing technology, introducing structural defects, increasing the dissipation rate of the vibration energy of the micro-cantilever probe, and reducing the quality factor Q of the micro-cantilever probe, thereby obtaining the micro-cantilever probe with low quality factor.
9. The method of manufacturing a microcantilever probe as in claim 8, wherein,
the micro-machining process comprises the following steps: laser direct writing or focused ion beam etching; and/or
The micro-nano structure is selected from one or more of the following: through holes, blind holes, surface engraving and/or hollowed-out characters and lines.
10. The method of manufacturing a microcantilever probe as in claim 9, wherein when the micromachining process is laser direct writing, said process comprises the steps of:
(1) Designing a processing drawing, and transmitting the drawing to a laser processing control system;
(2) Horizontally placing and fixing a probe to be processed in a processing table, and adjusting the horizontal and vertical positions of the probe through a displacement table to enable a cantilever beam to be processed site of the probe to be aligned with a cross wire of a microscope;
(3) The laser processing is started after adjusting typical parameters of laser processing of the laser.
11. The method of claim 10, wherein in step (1), the software used in the design and processing drawing is selected from one or more of the following: CAD, soildworks, CAXA.
12. The method of claim 10, wherein in step (3), the laser processing typical parameters include: laser wavelength, repetition frequency, power, scanning speed, and scanning times; wherein, the liquid crystal display device comprises a liquid crystal display device,
the laser wavelength is 355nm;
the repetition frequency is 30-50kHz;
the power is 10-30W;
the scanning speed is 100-400mm/s; and/or
The scanning times are 1-3 times.
13. The method of preparing a microcantilever probe as claimed in claim 12, wherein in the step (3),
the repetition frequency is 30-45kHz;
the power is 10-25W;
the scanning speed is 100-300mm/s; and/or
The scanning times are 1-2 times.
14. The method of claim 13, wherein in the step (3),
the repetition frequency is 35-45kHz;
the power is 10-20W;
the scanning speed is 100-250mm/s; and/or
The number of scans was 1.
15. The method of preparing a microcantilever probe as claimed in claim 14, wherein in the step (3),
the repetition frequency is 40kHz;
the power is 15W; and/or
The scanning speed is 200mm/s.
16. The method of claim 9, wherein when the micromachining process is focused ion beam lithography, the process comprises the steps of:
(1) Designing an etching layout;
(2) The layout is imported to a focused ion beam control system, and the length and width of the etching pattern are set in the control system;
(3) Fixing a probe to be processed on a sample stage etched by an ion beam by using conductive adhesive, and adjusting the horizontal position of the probe by using a displacement stage;
(4) Typical parameters of focused ion beam etching are set, the sample surface is adjusted to the focus plane of the ion beam, and etching is started.
17. The method of manufacturing a microcantilever probe as in claim 16, wherein:
in the step (2), the length of the pattern is 60-150um; the width of the pattern is 10-60um; and/or
In the step (3), the conductive adhesive is: carbon conductive adhesive-or copper adhesive tape.
18. The method of manufacturing a microcantilever probe as in claim 17, wherein: in the step (2), the length of the pattern is 80-120um; the width of the pattern is 20-40um.
19. The method of claim 16, wherein in step (4), typical parameters of the focused ion beam etching include: etching voltage, etching beam current, etching depth and residence time; wherein, the liquid crystal display device comprises a liquid crystal display device,
the etching voltage is 10-50kV;
the etching beam current is 5-30nA;
the etching depth is 100-400nm; and/or
The residence time is 0.1-4. Mu.s.
20. The method of claim 19, wherein in the step (4),
the etching voltage is 10-40kV;
the etching beam current is 5-25nA;
the etching depth is 100-300nm; and/or
The residence time is 0.1-3. Mu.s.
21. The method of claim 20, wherein in the step (4),
the etching voltage is 20-40kV;
the etching beam current is 5-20nA;
the etching depth is 100-250nm; and/or
The residence time is 0.1-2. Mu.s.
22. The method of claim 21, wherein in the step (4),
the etching voltage is 30kV;
the etching beam current is 10nA;
the etching depth is 200nm; and/or
The residence time was 1. Mu.s.
23. A microscope, characterized in that the microscope is an amplitude modulated atomic force microscope or a scanning near field optical microscope based on an amplitude modulated atomic force microscope, and that the mechanical sensing element of the microscope is a micro-cantilever probe prepared according to the method of any one of claims 8 to 22 or a low quality factor micro-cantilever probe according to any one of claims 1 to 7.
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| GB0316577D0 (en) * | 2003-07-15 | 2003-08-20 | Univ Bristol | Atomic force microscope |
| CN1834616A (en) * | 2005-03-17 | 2006-09-20 | 中国科学院化学研究所 | Quality factor controllable shearforce detection controller |
| US8479309B2 (en) * | 2011-04-28 | 2013-07-02 | The Board Of Trustees Of The University Of Illinois | Ultra-low damping imaging mode related to scanning probe microscopy in liquid |
| TWI681193B (en) * | 2014-10-06 | 2020-01-01 | 荷蘭商荷蘭Ｔｎｏ自然科學組織公司 | Scanning probe microscope |
| CN111896776B (en) * | 2020-06-30 | 2021-10-22 | 中山大学 | Atomic force microscope probe and manufacturing method thereof |
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| Control of an Active AFM Cantilever With Differential Sensing Configuration;M. Bulut Coskun 等;《IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY》;第27卷(第5期);第页 * |
| Energy dissipation in tapping-mode scanning force microscopy with low quality factors;Javier Tamayo;《APPLIED PHYSICS LETTERS》;第75卷(第22期);第3569-3571页 * |
| High-speed tapping mode imaging with active Q control for atomic force microscopy;T. Sulchek 等;《APPLIED PHYSICS LETTERS》;第76卷(第11期);第1473页 * |
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