CN113612461A - Chip-level air tightness packaging process of SAW filter - Google Patents
Chip-level air tightness packaging process of SAW filter Download PDFInfo
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- CN113612461A CN113612461A CN202110818713.9A CN202110818713A CN113612461A CN 113612461 A CN113612461 A CN 113612461A CN 202110818713 A CN202110818713 A CN 202110818713A CN 113612461 A CN113612461 A CN 113612461A
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- 238000012858 packaging process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000004806 packaging method and process Methods 0.000 claims abstract description 46
- 229920006254 polymer film Polymers 0.000 claims abstract description 27
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 3
- 239000011241 protective layer Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 241001391944 Commicarpus scandens Species 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 48
- 239000010408 film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a chip-level airtight packaging process of an SAW filter, which comprises the following steps: respectively arranging metal salient points in metal electrode pattern areas of the SAW filter of the wafer to obtain a bonded wafer; cutting and slicing the SAW filter wafer with the metal salient points; the SAW filter chip with the metal salient points is inversely arranged on the packaging substrate, and the positions of the metal salient points correspond to the positions of the metal electrodes of the packaging substrate; welding a metal bump on the packaging substrate; sticking a film on the surface of the SAW filter chip by using a polymer film, and curing after the film is stuck; and cutting to remove the polymer film on the packaging substrate scribe line. And (6) scribing and cutting. The advantages are that: the edge of the chip can be well wrapped; the chip is not easy to break, and can be bonded with the chip and the substrate without falling off; meanwhile, the material can be cured after reaching a certain temperature, the previous deformation is kept, and the cured state is still kept after the room temperature is recovered; has non-conductivity; the cavity between the chip and the substrate can be effectively prevented from external water vapor.
Description
Technical Field
The invention relates to the technical field of SAW filter packaging and manufacturing, in particular to a chip-level air tightness packaging process of an SAW filter.
Background
A Surface Acoustic Wave (SAW) filter is a passive device that uses SAW to process and propagate signals, and has the advantages of light weight, small volume, high reliability, and the like, and is widely applied to the fields of radio communication systems, global positioning systems, and the like. The conventional SAW filter adopts an airtight packaging form of ceramic surface-mounted packaging or metal tube shell packaging after wire bonding, and the minimum size is 3mm multiplied by 3 mm. In order to avoid the cross short circuit of the bonding wire, the height of the wire arc is generally increased, and a certain lead space needs to be reserved above the chip, so that the development requirements of further miniaturization and integration of the whole system are difficult to meet. In order to further reduce the package size, a flip chip based chip scale package technology was proposed in japan first, which does not need to have a plurality of bonding wires, and thus saves the lead space. This has driven the development of SAW filters toward smaller package sizes and lighter weights with further application of chip scale packaging technology.
At present, most of SAW filters for civil chip scale packaging are directly encapsulated by resin materials after flip chips, and the defects are that the internal atmosphere environment cannot be ensured. In the fields of a large number of military communication systems, navigation, telemetering, remote control and other weaponry, the SAW filter with high-reliability packaging is required to be adopted. The research of the patent finds that the existing packaging method can not meet the requirement of air-tight packaging.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a chip-level airtight packaging process for an SAW filter, which effectively overcomes the defects of the prior art.
The technical scheme for solving the technical problems is as follows:
a chip-level airtight packaging process for a SAW filter comprises the following steps:
s1, respectively arranging metal bumps in metal electrode pattern areas of the SAW filters of the wafer to obtain a bonded wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps to obtain SAW filter chips with the metal bumps;
s3, flip-chip placing the SAW filter chip with the metal bumps on the packaging substrate, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal bumps on the packaging substrate to form a cavity structure between the SAW filter chip and the packaging substrate in a surrounding manner, and realizing electrical interconnection between the chip and the packaging substrate;
s5, sticking a film on the surface of the SAW filter chip by adopting a polymer film in the nitrogen atmosphere of the component obtained in the step S4, and curing after sticking the film to obtain a structural component which is formed by completely wrapping the top and the edge of the SAW filter chip by the polymer film;
s6, cutting and removing the polymer film on the packaging substrate scribe line to expose the scribe line area on the packaging substrate;
and S7, scribing and cutting to obtain the independent SAW filter airtight packaging device.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, in S2, the SAW filter wafer having the metal bumps is cut and sliced by a grinding wheel dicing method.
Further, the S5 includes:
s51, placing all the SAW filter chips and the packaging substrates which are subjected to flip chip welding in a vacuum film sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then curing;
and S53, recovering to room temperature after curing to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film.
Further, in S6, the polymer film on the scribe line of the package substrate is removed by a laser cutting method.
Further, in S7, cutting is performed by using a grinding wheel dicing method, so as to obtain an independent SAW filter airtight package device.
Further, after S6, a metal protection layer fixed to the package substrate is coated outside the coverage area of the polymer film.
Further, the metal protection layer comprises a seed layer formed by sputtering titanium tungsten and copper, and a metal layer formed by electroplating copper, nickel and gold.
The invention has the beneficial effects that: the adhesion phenomenon can not occur under the normal temperature state, and the film pasting operation is convenient; the coating has fluidity and can form good coating on the edge of a chip; the adhesive has certain elasticity and certain viscosity at certain temperature, is not easy to break, can be bonded with a chip and a substrate without falling off, and can avoid failure caused by membrane rupture due to external pressure in the subsequent packaging process; meanwhile, the material can be cured after reaching a certain temperature, the previous deformation is kept, and the cured state is still kept after the room temperature is recovered; has non-conductivity and can be used in a device without performance change. The polymer film packaging structure can effectively prevent external water vapor from entering a cavity between the chip and the substrate, and meanwhile, normal work of a device is guaranteed.
Drawings
Fig. 1 is a schematic structural diagram illustrating that metal bumps are respectively disposed in different metal electrode pattern regions of at least one SAW filter on a wafer;
FIG. 2 is a schematic structural diagram of a metal electrode pattern region of a package substrate with a metal bump of a cutting member flipped thereon;
FIG. 3 is a schematic structural diagram of a package substrate with a cavity formed by flip-chip bonding of metal bumps of a cutting member to a metal electrode pattern region of the package substrate;
FIG. 4 is a schematic structural diagram of a cutting member after being cured and vacuum-filmed and packaged by using a polymer film material;
FIG. 5 is a schematic diagram of a structure after polymer thin film material on scribe lines of a package substrate is cut and removed;
FIG. 6 is a schematic structural diagram of a packaged SAW filter without a metal passivation layer
FIG. 7 is a schematic structural diagram after a metal passivation layer is formed;
fig. 8 is a schematic structural diagram of a packaged SAW filter with a metal passivation layer.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
Example (b): as shown in fig. 1 to 6, the chip-level hermetic packaging process of the SAW filter of the present embodiment includes the following steps:
s1, respectively arranging metal bumps in metal electrode pattern areas of the SAW filters of the wafer to obtain a bonded wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps in a grinding wheel scribing mode to obtain SAW filter chips with the metal bumps;
s3, flip-chip placing the SAW filter chip with the metal bumps on the packaging substrate, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal bumps on the packaging substrate to form a cavity structure between the SAW filter chip and the packaging substrate in a surrounding manner, and realizing electrical interconnection between the chip and the packaging substrate;
s5, sticking a film on the surface of the SAW filter chip by using a polymer film in the member obtained in the step S4 in a nitrogen atmosphere, and curing after sticking the film to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film, wherein the method comprises the following specific steps:
s51, placing all the SAW filter chips and the packaging substrates which are subjected to flip chip welding in a vacuum film sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then curing;
s53, after curing, recovering to room temperature to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film;
s6, cutting and removing the polymer film on the packaging substrate scribe line by adopting a laser cutting method to expose the scribe line area on the packaging substrate;
and S7, cutting by adopting a grinding wheel scribing method to obtain the independent SAW filter airtight packaging device.
In the embodiment, a gold wire ball bonding process is adopted to manufacture a metal bump structure in a metal electrode pattern area on the surface of the SAW filter wafer, the diameter range of the used gold wire is 15-38 μm, the diameter range of the metal bump is 50-80 μm, the thickness range is 15-35 μm, the diameter of the metal bump is ensured to be smaller than the size of a metal electrode on the SAW filter, the thickness of the metal bump ensures that a cavity structure can be formed after the SAW filter is inversely welded, the wafer substrate is made of a piezoelectric material, and a metal electrode c on the SAW filter is made of a metal material, such as aluminum, gold, copper or other metal materials capable of replacing the metal material; the metal electrode e on the packaging substrate is a surface gold-plated structure, and the thickness of the gold layer is more than 0.5 mu m; the packaging substrate j is a printed board, an LTCC substrate or an HTCC substrate and is provided with a metal electrode e and a lead structure; the polymer film h is a special organic material, can completely wrap the top and the edge of the SAW filter b after being pasted with a film by a vacuum clamp, has certain elasticity, can effectively prevent external water vapor from entering, and can ensure the normal work of a device.
Compared with the traditional process, the process of the embodiment has the following characteristics that: the adhesion phenomenon can not occur under the normal temperature state, and the film pasting operation is convenient; the coating has fluidity and can form good coating on the edge of a chip; the adhesive has certain elasticity and certain viscosity at certain temperature, is not easy to break, can be bonded with a chip and a substrate without falling off, and can avoid failure caused by membrane rupture due to external pressure in the subsequent packaging process; meanwhile, the material can be cured after reaching a certain temperature, the previous deformation is kept, and the cured state is still kept after the room temperature is recovered; has non-conductivity and can be used in a device without performance change. The polymer film packaging structure can effectively prevent external water vapor from entering a cavity between the chip and the substrate, and meanwhile, normal work of a device is guaranteed. Therefore, the minimum package size of 1.1mm multiplied by 0.9mm can be achieved, and meanwhile, the requirement of the air tightness test in GJB548B-2005 can be met.
As a preferred embodiment, as shown in fig. 7 and 8, after S6, a metal protection layer i fixed to the package substrate is coated outside the covering region of the polymer film.
In this embodiment, the metal protection layer i is titanium tungsten, copper, nickel, gold or other metal material, specifically, the metal protection layer i includes a seed layer formed by sputtering titanium tungsten and copper, and a metal layer formed by electroplating copper, nickel and gold, and the metal protection layer i can prevent moisture from diffusing into the device and can reinforce the structure of the whole product.
The following are specifically mentioned: in the drawing, a denotes a wafer, b denotes a SAW filter, c denotes a metal electrode of the SAW filter, d denotes a metal bump, e denotes a metal electrode of a package substrate, f denotes a cavity formed between the package substrate and the SAW filter, j denotes the package substrate, h denotes a polymer film, and i denotes a metal protection layer.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (7)
1. A chip-level airtight packaging process for a SAW filter is characterized by comprising the following steps:
s1, respectively arranging metal bumps in metal electrode pattern areas of the SAW filters of the wafer to obtain a bonded wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps to obtain SAW filter chips with the metal bumps;
s3, flip-chip placing the SAW filter chip with the metal bumps on the packaging substrate, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal bumps on the packaging substrate to form a cavity structure between the SAW filter chip and the packaging substrate in a surrounding manner, and realizing electrical interconnection between the chip and the packaging substrate;
s5, sticking a film on the surface of the SAW filter chip by adopting a polymer film in the nitrogen atmosphere of the component obtained in the step S4, and curing after sticking the film to obtain a structural component which is formed by completely wrapping the top and the edge of the SAW filter chip by the polymer film;
s6, cutting and removing the polymer film on the packaging substrate scribe line to expose the scribe line area on the packaging substrate;
and S7, scribing and cutting to obtain the independent SAW filter airtight packaging device.
2. The chip-scale hermetic packaging process for the SAW filter as claimed in claim 1, wherein: in S2, the SAW filter wafer with the metal bumps is cut and sliced by a grinding wheel dicing method.
3. The chip-scale hermetic packaging process for the SAW filter as claimed in claim 1, wherein the S5 comprises:
s51, placing all the SAW filter chips and the packaging substrates which are subjected to flip chip welding in a vacuum film sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then curing;
and S53, recovering to room temperature after curing to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film.
4. The chip-scale hermetic packaging process for the SAW filter as claimed in claim 1, wherein: in S6, the polymer film on the scribe line of the package substrate is removed by a laser cutting method.
5. The chip-scale hermetic packaging process for the SAW filter as claimed in claim 1, wherein: and in the step S7, cutting by adopting a grinding wheel scribing method to obtain the independent SAW filter airtight packaging device.
6. A process for chip-scale hermetic packaging of SAW filters, as claimed in any one of claims 1 to 5, wherein: and after the step S6, covering a metal protective layer fixed with the packaging substrate on the outer side of the coverage area of the polymer film.
7. The chip-scale hermetic packaging process for the SAW filter as claimed in claim 6, wherein: the metal protection layer comprises a seed layer formed by sputtering titanium tungsten and copper and a metal layer formed by electroplating copper, nickel and gold.
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| CN202110818713.9A CN113612461B (en) | 2021-07-20 | 2021-07-20 | Chip-level airtight packaging technology of SAW filter |
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| CN202110818713.9A CN113612461B (en) | 2021-07-20 | 2021-07-20 | Chip-level airtight packaging technology of SAW filter |
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| CN112349607A (en) * | 2020-11-11 | 2021-02-09 | 北京航天微电科技有限公司 | Packaging method of air cavity type thin film filter and air cavity type thin film filter |
| CN112583375A (en) * | 2020-12-15 | 2021-03-30 | 北京航天微电科技有限公司 | Method for packaging film bulk acoustic wave filter and packaging device |
| CN112865736A (en) * | 2021-01-20 | 2021-05-28 | 广东省科学院半导体研究所 | SAW filter chip packaging structure, preparation method thereof and electronic equipment |
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