CN113594266A - Protective layer of semiconductor photoelectric chip and preparation process of semiconductor - Google Patents
Protective layer of semiconductor photoelectric chip and preparation process of semiconductor Download PDFInfo
- Publication number
- CN113594266A CN113594266A CN202110802529.5A CN202110802529A CN113594266A CN 113594266 A CN113594266 A CN 113594266A CN 202110802529 A CN202110802529 A CN 202110802529A CN 113594266 A CN113594266 A CN 113594266A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon nitride
- sio
- semiconductor
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000011241 protective layer Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 31
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 31
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 14
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 230000005693 optoelectronics Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 5
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 9
- 239000003292 glue Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a protective layer of a semiconductor photoelectric chip and a preparation process of a semiconductor thereof2O3/SiO2The layer and the second silicon nitride layer present a sandwich structure. The process for preparing the semiconductor device with the protective layer comprises the following steps: processing a chip; cleaning the wafer; depositing a first silicon nitride layer on the surface of the wafer; depositing Al on the first silicon nitride layer2O3/SiO2A layer; in Al2O3/SiO2Depositing a second silicon nitride layer over the layer; then the photoresist is removed by a photoetching process and a dry etching process to prepare the photoresistAnd preparing to obtain the required semiconductor. The protective layer with the sandwich structure fully utilizes the characteristics of different thin film layers to realize long-acting blocking of water vapor, improves the durability of the device, does not influence the electrical property of the semiconductor device, can adjust the reflection property of light by adjusting the structure and the film thickness of the protective layer, has simple preparation process, low cost and good efficiency, and has good application prospect.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a protective layer of a semiconductor photoelectric chip and a preparation process of a semiconductor of the protective layer.
Background
The semiconductor photoelectric chip comprises an LED, a laser, a photodiode and the like, is made of compound semiconductors such as InP, GaAs, GaN and the like, and is easily oxidized when exposed to air. The water vapor has an effect of accelerating oxidation and erosion on electrodes and materials on the surface of the semiconductor laser chip, and finally the photoelectric chip is out of work. To avoid this problem, the common techniques include packaging the tube and applying a sealing glue. The package technology (structure shown in figure 1) of the tube shell is that a photoelectric chip is attached TO a base, a TO tube cap is fixed with the base through a welding or glue adhering method, a large amount of equipment is additionally required TO be added for attaching, aligning, sealing and welding and testing, materials of the base and the tube shell are introduced, the package cost is high, the whole volume is increased by hundreds of times compared with the chip after the package, larger size requirements for subsequent product design are highlighted, and the integration level of a device module is reduced.
In addition, the sealing glue is smeared (the structure is shown in the attached drawing 2) and can be used for chip-on-board packaging (COB packaging for short), the chip is directly attached to a printed circuit board (PCB for short), and the sealing glue is smeared on the chip and the PCB area and can form a certain water vapor isolation effect on the chip. Compared with a tube shell packaging technology, the method has the characteristics of small volume, low cost and easy integration, but the commonly used glue is a long-chain carbon molecule compound, and under the environment of high surface temperature generated by the working of a chip, carbon chain molecules are gradually broken along with the time, so that the glue is aged to form cracks, and the water vapor isolation capability is lost, so that the method cannot be used in the field with certain reliability requirements.
Disclosure of Invention
In order to solve the technical problem, the invention provides a protective layer of a semiconductor photoelectric chip and a preparation process of a semiconductor thereof, wherein the protective layer is made of silicon nitride/Al2O3/SiO2The material composition has a sandwich structure, and utilizes the characteristics of different materials to realize water treatmentLong-acting blocking of steam; in addition, the protective layer is prepared on the wafer-level chip by utilizing a semiconductor process, so that the material consumption is low, the preparation process is simple, the size of the protective layer is small, the realization of higher device integration level is facilitated, and the reliability requirement is met.
The invention provides the following technical scheme:
the invention provides a protective layer of a semiconductor photoelectric chip, which comprises a first silicon nitride layer and Al from bottom to top in sequence2O3/SiO2A layer and a second silicon nitride layer; the first silicon nitride layer is deposited on the surface of the photoelectric chip; the Al is2O3/SiO2A layer deposited on the first silicon nitride layer, the Al2O3/SiO2The layer is a multi-layer film structure formed by circularly superposing an aluminum oxide film and a silicon oxide film; the second silicon nitride layer is deposited on Al2O3/SiO2On the layer.
Al2O3/SiO2The layers are multilayer thin film structures formed by circularly superposing aluminum oxide thin films and silicon oxide thin films, and the number and the thickness of the multilayer thin film structures can be adjusted according to different requirements.
Further, the thickness of the first silicon nitride layer is 30-300 nm.
Further, the refractive index of the first silicon nitride layer at a wavelength of 632nm is 2.0 to 2.2.
Further, the Al2O3/SiO2The thickness of the layer is 40-300 nm; the Al is2O3/SiO2The thickness of the single-layer film in the layer is 20-50 nm.
Further, the Al2O3The refractive index of the film at 632nm wavelength is 1.64-1.66; the SiO2The refractive index of the film at 632nm wavelength is 1.45-1.47.
Further, the thickness of the second silicon nitride layer is 30-300 nm.
Further, the second silicon nitride layer has a refractive index of 2.0 to 2.2 at a wavelength of 632 nm.
In order to ensure the quality of each layer of deposited film, the thickness of each layer of film needs to be controlled in a reasonable interval, if the thickness of the film is too small, the film forming quality is poor, and cavities are easy to exist, but if the thickness of the film is too large, stress and accumulation of defects are easy to form in the film forming process, so that the defects in the film are caused, and in addition, the reflectivity of the film to a specific wavelength can be improved or reduced by adjusting the thickness of each layer of film, so as to meet specific optical requirements.
Further, the protective layer has a sandwich structure.
By successively depositing a silicon nitride layer, Al2O3/SiO2The layer and the silicon nitride layer form a sandwich structure, wherein the silicon nitride has the characteristics of high thermal stability and strong oxidation resistance, the alumina film prepared by atomic layer deposition has good hydrophobicity, and the silicon oxide plays the roles of stress balance and protection, and the sandwich structure makes full use of the chemical characteristics of different films, so that the whole protective layer has good thermal stability and hydrophobic property. In addition, because different layers of films have different physicochemical properties and lattice structures, the continuous growth of defect cracks in the film deposition process can be avoided, so that the mechanical strength of the whole protective layer is improved, and the long-acting blocking of water vapor is realized.
A second aspect of the invention provides a semiconductor optoelectronic chip having the protective layer of the first aspect.
The third aspect of the present invention provides a process for preparing the semiconductor optoelectronic chip of the second aspect, comprising the steps of:
step (1): processing a chip;
step (2): cleaning a wafer;
and (3): depositing a first silicon nitride layer;
and (4): al (Al)2O3/SiO2Depositing a layer;
and (5): depositing a second silicon nitride layer;
and (6): photoetching;
and (7): dry etching;
and (8): and removing the photoresist.
Further, in the step (3), a first silicon nitride layer is deposited on the surface of the photoelectric chip by a plasma enhanced chemical vapor method.
Further, in the step (4), Al is deposited on the first silicon nitride layer by an atomic layer deposition method2O3/SiO2A multilayer film.
Further, in the step (5), Al is formed on the surface of the Al by a plasma enhanced chemical vapor deposition method2O3/SiO2A second silicon nitride layer is deposited over the layer.
The film deposited by the plasma enhanced chemical phase method has high compactness, and in addition, the film deposited by the atomic layer deposition method has the full-coating characteristic, and the wafer is completely coated by the selection of the preparation process.
Further, in step (6), photoresist is coated on the surface of the wafer, and photolithography is performed after the photoresist above the metal electrode is removed.
Further, in the step (7), the silicon nitride-Al above the metal electrode is removed by dry etching2O3/SiO2-a silicon nitride layer.
Through photoetching and etching processes, the coating material at the metal position is accurately and directionally removed, and the photoelectric performance of the photoelectric chip is not influenced by the coating layer.
Further, the semiconductor photoelectric chip is directly used for a silicon photoelectric chip or a PCB, and tube shell packaging and sealing glue coating are not needed.
By the scheme, the invention has the following beneficial effects:
1. the inorganic protective layer with the sandwich structure is manufactured on the surface of the chip by a plasma enhanced chemical phase method and an atomic layer deposition method, the overall thermal stability, hydrophobicity and mechanical strength of the protective layer are improved by fully utilizing the characteristics and structural characteristics of the materials of all the films, the long-acting blocking of water vapor is realized, the durability of the device is improved, and the reflectivity of the film to a specific wavelength is improved or reduced by adjusting the structure of the protective layer and the thickness of each film, so that specific optical requirements are met.
2. The protective layer of the semiconductor photoelectric chip is manufactured in a chip processing link and a semiconductor process, has the advantages of low material consumption, simple preparation process and strong controllability, and does not influence the electrical property of a product while realizing water vapor isolation.
3. The semiconductor photoelectric chip with the protective layer prepared by the invention can be directly used for a silicon photoelectric chip or a PCB (printed Circuit Board), and the package of a tube shell is not needed, so that the space and the cost are saved, the higher integration level of devices can be realized, and the reliability requirement can be met.
Drawings
FIG. 1 is a schematic diagram of a TO packaged die;
FIG. 2 is a schematic diagram of a chip-on-board package;
fig. 3 is a process flow diagram of a semiconductor optoelectronic chip and a protective layer.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The experimental methods used in the following examples are conventional methods unless otherwise specified, and materials, reagents and the like used therein are commercially available without otherwise specified.
Example 1
Using vertical cavity surface emitter as an example, silicon nitride-Al is deposited in the product process2O3/SiO2The multilayer silicon nitride film is used as a protective layer, and the composition and structure of the protective film have the relevant parameters shown in table 1:
TABLE 1 composition and Structure of protective film
| Deposition sequence | Kind of film | Thickness of film | Refractive index |
| 1 | Silicon nitride | 50 | 2.0 |
| 2 | Al2O3 | 50 | 1.65 |
| 3 | SiO2 | 30 | 1.46 |
| 4 | Silicon nitride | 190 | 2.0 |
The prepared protective film can realize that the light reflectivity is less than 1% under the wavelength of 850nm so as to reduce the reflectivity of the cavity surface to the light with the wavelength.
The performance of the same laser without the protective film structure and the performance of the same laser with the protective film structure are tested, and the results show that the laser with the protective film has better optical antireflection effect, and the laser without the protective film and the laser with the protective film have no obvious difference in threshold current median line and slope efficiency, which indicates that the electrical property of the laser is not influenced by the addition of the protective film; in addition, the two lasers are subjected to double 85 storage stability test (85 ℃, 85% humidity), the service life of the laser without the protective structure is less than 500h, the service life of the laser with the protective film structure is prolonged to be more than 3000h, and the reliability is greatly improved.
Example 2
The photodiode is used as a device for converting received light into a current signal and depositing silicon nitride-Al in the product process2O3/SiO2/Al2O3/SiO2The multilayer silicon nitride film is used as a protective layer, and the composition and structure of the protective film are shown in table 2:
TABLE 2 composition and Structure of protective film
| Deposition sequence | Kind of film | Thickness of film | Refractive index |
| 1 | Silicon nitride | 30 | 2.0 |
| 2 | Al2O3 | 50 | 1.65 |
| 3 | SiO2 | 30 | 1.46 |
| 4 | Al2O3 | 50 | 1.65 |
| 5 | SiO2 | 30 | 1.46 |
| 6 | Silicon nitride | 40 | 2.0 |
The prepared protective film can realize that the light reflectivity is less than 1% at the wavelength of 1550nm, the light conversion efficiency of the photodiode is improved, and the dark current, the responsivity and the frequency characteristic of the photodiode without the protective film and after the protective film is added are kept consistent, which indicates that the electrical property of the photodiode is not influenced by the addition of the protective film; in addition, the double 85 storage stability test (85 ℃, 85% humidity) is carried out on the two photodiodes, the reliability of 5000 hours can be achieved by adding the protective film structure, the reliability of the photodiode with a normal structure (without adding the protective film) is only 1500 hours, and the reliability of the photodiode is obviously improved after the protective film is added.
According to the embodiment and the performance comparison result, the protective layer with the sandwich structure is prepared on the surface of the chip, the method is suitable for various semiconductor devices, the duration of the double 85 reliability test of the semiconductor device with the protective layer is greatly prolonged compared with the semiconductor device without the protective layer, the corresponding service life is greatly prolonged, and the reflectivity of the film to a specific wavelength can be improved or reduced by adjusting the structure of the protective layer and the thickness of each layer of film, so that specific optical requirements are met.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. The protective layer of the semiconductor photoelectric chip is characterized in that the protective layer sequentially comprises a first silicon nitride layer and Al from bottom to top2O3/SiO2A layer and a second silicon nitride layer; the first silicon nitride layer is deposited on the surface of the photoelectric chip; the Al is2O3/SiO2A layer deposited on the first silicon nitride layer, the Al2O3/SiO2The layer is a multi-layer film structure formed by circularly superposing an aluminum oxide film and a silicon oxide film; the second silicon nitride layer is deposited on Al2O3/SiO2On the layer.
2. The passivation layer for a semiconductor optoelectronic chip as claimed in claim 1, wherein the thickness of the first silicon nitride layer is 30-300 nm.
3. The protective layer of a semiconductor optoelectronic chip of claim 1, wherein said Al is2O3/SiO2The thickness of the layer is 40-300 nm; the Al is2O3/SiO2The thickness of the single-layer film in the layer is 20-50 nm.
4. The protective layer for a semiconductor optoelectronic chip as claimed in claim 1, wherein the thickness of the second silicon nitride layer is 30-300 nm.
5. A semiconductor optoelectronic chip having the protective layer of any one of claims 1 to 4.
6. The process for manufacturing a semiconductor optoelectronic chip according to claim 5, comprising the steps of:
step (1): processing a chip;
step (2): cleaning a wafer;
and (3): depositing a first silicon nitride layer;
and (4): al (Al)2O3/SiO2Depositing a layer;
and (5): depositing a second silicon nitride layer;
and (6): photoetching;
and (7): dry etching;
and (8): and removing the photoresist.
7. The process according to claim 6, wherein in step (3), the first silicon nitride layer is deposited on the surface of the optoelectronic chip by plasma enhanced chemical vapor deposition.
8. The process according to claim 6, wherein in the step (4), Al is deposited on the first silicon nitride layer by atomic layer deposition2O3/SiO2A multilayer film.
9. The process according to claim 6, wherein in the step (5), Al is formed by plasma enhanced chemical vapor deposition2O3/SiO2A second silicon nitride layer is deposited over the layer.
10. According to claimThe manufacturing process of the semiconductor photoelectric chip, according to claim 6, is characterized in that, in the step (6), the photolithography specifically comprises: coating photoresist on the surface of the wafer, removing the photoresist on the metal electrode, and then carrying out photoetching; in the step (7), the silicon nitride-Al above the metal electrode is removed by dry etching2O3/SiO2-a silicon nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110802529.5A CN113594266B (en) | 2021-07-15 | 2021-07-15 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110802529.5A CN113594266B (en) | 2021-07-15 | 2021-07-15 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113594266A true CN113594266A (en) | 2021-11-02 |
| CN113594266B CN113594266B (en) | 2024-01-02 |
Family
ID=78247623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110802529.5A Active CN113594266B (en) | 2021-07-15 | 2021-07-15 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113594266B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114812843A (en) * | 2022-04-11 | 2022-07-29 | 北京交通大学 | High-temperature sensor based on multilayer film thermal protection and preparation method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121776A (en) * | 1991-10-28 | 1993-05-18 | Sony Corp | Semiconductor device and manufacture thereof |
| US20060046518A1 (en) * | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
| CN104051652A (en) * | 2014-06-19 | 2014-09-17 | 上海和辉光电有限公司 | Flexible thin film transistor |
| CN104183769A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting diode and preparation method thereof |
| CN104979478A (en) * | 2014-04-03 | 2015-10-14 | 海洋王照明科技股份有限公司 | Flexible organic light emission diode and preparation method thereof |
| CN105118805A (en) * | 2015-07-30 | 2015-12-02 | 上海华力微电子有限公司 | Technical method for manufacturing dual contact etch stop layer |
| CN110120343A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of silicon nitride film and semiconductor devices |
| CN110473921A (en) * | 2019-06-25 | 2019-11-19 | 阜宁苏民绿色能源科技有限公司 | A kind of PERC battery back passivating structure and preparation method |
| CN111082304A (en) * | 2018-10-18 | 2020-04-28 | 上海矽安光电科技有限公司 | Semiconductor laser packaged silicon substrate chip and preparation method thereof |
| CN111477549A (en) * | 2020-04-26 | 2020-07-31 | 上海华力集成电路制造有限公司 | Method for manufacturing semiconductor device using stress memorization technology |
| CN112038333A (en) * | 2020-07-16 | 2020-12-04 | 华灿光电（浙江）有限公司 | Micro light-emitting diode display array and manufacturing method thereof |
| CN112909087A (en) * | 2021-03-08 | 2021-06-04 | 滁州惠科光电科技有限公司 | Display panel, thin film transistor and preparation method thereof |
-
2021
- 2021-07-15 CN CN202110802529.5A patent/CN113594266B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121776A (en) * | 1991-10-28 | 1993-05-18 | Sony Corp | Semiconductor device and manufacture thereof |
| US20060046518A1 (en) * | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
| CN104183769A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting diode and preparation method thereof |
| CN104979478A (en) * | 2014-04-03 | 2015-10-14 | 海洋王照明科技股份有限公司 | Flexible organic light emission diode and preparation method thereof |
| CN104051652A (en) * | 2014-06-19 | 2014-09-17 | 上海和辉光电有限公司 | Flexible thin film transistor |
| CN105118805A (en) * | 2015-07-30 | 2015-12-02 | 上海华力微电子有限公司 | Technical method for manufacturing dual contact etch stop layer |
| CN110120343A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of silicon nitride film and semiconductor devices |
| CN111082304A (en) * | 2018-10-18 | 2020-04-28 | 上海矽安光电科技有限公司 | Semiconductor laser packaged silicon substrate chip and preparation method thereof |
| CN110473921A (en) * | 2019-06-25 | 2019-11-19 | 阜宁苏民绿色能源科技有限公司 | A kind of PERC battery back passivating structure and preparation method |
| CN111477549A (en) * | 2020-04-26 | 2020-07-31 | 上海华力集成电路制造有限公司 | Method for manufacturing semiconductor device using stress memorization technology |
| CN112038333A (en) * | 2020-07-16 | 2020-12-04 | 华灿光电（浙江）有限公司 | Micro light-emitting diode display array and manufacturing method thereof |
| CN112909087A (en) * | 2021-03-08 | 2021-06-04 | 滁州惠科光电科技有限公司 | Display panel, thin film transistor and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 杨国波;赵文星;孙泉钦;李端明;郜明浩;: "应用于AMOLED薄膜封装的高应力氮化硅工艺探讨", 电子世界, no. 09 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114812843A (en) * | 2022-04-11 | 2022-07-29 | 北京交通大学 | High-temperature sensor based on multilayer film thermal protection and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113594266B (en) | 2024-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101656275B (en) | Preparation method of chip of flip chip type multijunction compound solar cell | |
| TWI288487B (en) | Optoelectronic semiconductor-chip and method to form a contact-structure for the electrical contact of an optoelectronic semiconductor-chip | |
| WO2005088743A1 (en) | Fabrication of semiconductor devices | |
| CN101421859A (en) | GaN-based semiconductor light-emitting device and method for the fabrication thereof | |
| JPH10173295A (en) | Optical device and integrated circuit | |
| US20110149399A1 (en) | Anti-reflection structure and method for fabricating the same | |
| US20110140081A1 (en) | Method for fabricating semiconductor light-emitting device with double-sided passivation | |
| EP3474333A1 (en) | Solar cell and production method therefor, and solar cell module | |
| CN113594266B (en) | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer | |
| RU2354009C1 (en) | Method for manufacture of photoelectric transducers based on multilayer structure | |
| JP2012119569A (en) | Nitride semiconductor element | |
| RU2570814C2 (en) | Fabrication of solar cell and solar cell thus made | |
| CN100479207C (en) | LED with high light extracting efficiency and preparing method thereof | |
| CN104634767B (en) | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor | |
| CN102117861A (en) | Method for manufacturing amorphous mercury cadmium telluride monolithic integrated focal plane detector | |
| CN108123018A (en) | A kind of GaN-based flip-chip structure light-emitting device and preparation method thereof | |
| US20220020890A1 (en) | Multi-junction laminated laser photovoltaic cell | |
| TW201727929A (en) | Method of manufacturing a germanium-on-insulator substrate | |
| JP4241764B2 (en) | Group III nitride compound semiconductor light emitting device | |
| Ibrahim et al. | Etching, evaporated contacts and antireflection coating on multicrystalline silicon solar cell | |
| US11177407B2 (en) | Method for manufacturing solar cell, solar cell, and solar cell module | |
| US20140138730A1 (en) | Method of Producing a Plurality of Optoelectronic Semiconductor Chips | |
| CN111628022B (en) | GaAs-based photoelectric device and preparation method of array thereof | |
| CN101840975A (en) | Photoelectric element and formation method thereof | |
| US20230215963A1 (en) | Solar cell device and method for producing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |