CN113584572B

CN113584572B - Crystal preparation device

Info

Publication number: CN113584572B
Application number: CN202110870910.5A
Authority: CN
Inventors: 王宇; 官伟明; 梁振兴; 李敏
Original assignee: Meishan Boya New Material Co ltd
Current assignee: Meishan Boya New Material Co ltd
Priority date: 2019-08-21
Filing date: 2020-06-24
Publication date: 2022-05-10
Anticipated expiration: 2040-06-24
Also published as: CN113584572A; CN111575784B; CN111575784A

Abstract

The present specification relates to a crystal manufacturing apparatus. The device includes: a hearth; the temperature field is at least partially positioned in the hearth and is in sealing connection with the vacuum device; a lifting rod, at least a portion of which is located within the thermal field; and the moving device is in transmission connection with the lifting rod to drive the lifting rod to move up and down and/or rotate.

Description

Crystal preparation device

Description of the cases

The application is a divisional application which is provided for Chinese application with the application date of 2020, 6 and 24 and the application number of 202010585048.9.

Priority declaration

The present application claims priority from international application PCT/CN2019/101698 filed on day 8, month 21, 2019 and chinese application 201910772691.X filed on day 21, month 8, 2019, the entire contents of which are incorporated herein by reference.

Technical Field

The present application relates to the field of stimulated emission devices, and more particularly, to a crystal preparation apparatus for preparing a crystal in a stimulated emission device.

Background

A stimulated emission device is a device that is excited by an external condition (e.g., gamma rays, X rays) to cause an energy state transition of an electron, thereby emitting light. With the development of science and technology, stimulated emission devices are widely applied to the fields of industry, medical treatment, scientific research, communication, military and the like. Various crystal materials (e.g., scintillation crystals, laser crystals) are typically used in stimulated emission devices. In order to ensure the quality of the prepared crystal and thus improve the performance of the stimulated emission device, the crystal preparation apparatus needs to meet relatively strict requirements, such as containment, vacuum, and the like. However, the conventional crystal preparation apparatus has a complicated structure and is difficult to control in a vacuum environment, which is not favorable for stable growth of crystals. Therefore, it is necessary to provide a crystal production apparatus which can satisfy the requirement of vacuum degree and produce high quality crystals.

Disclosure of Invention

One embodiment of the present disclosure provides a crystal manufacturing apparatus. The crystal preparation device comprises a hearth; the temperature field is at least partially positioned in the hearth and is in sealing connection with the vacuum device; a lifting rod, at least a portion of which is located within the thermal field; and the moving device is in transmission connection with the lifting rod to drive the lifting rod to move up and down and/or rotate.

In some embodiments, a portion of the thermal field is located inside the furnace and another portion of the thermal field is located outside the furnace.

In some embodiments, the hearth includes a furnace cover, the furnace cover is provided with a first through hole, and the temperature field is placed in the hearth through the first through hole.

In some embodiments, the furnace is an unsealed structure.

In some embodiments, the thermal field comprises a top opening; the top opening is connected with a top sealing element in a sealing mode, the top sealing element comprises a second through hole, and the temperature field is connected with the vacuum device in a sealing mode through the second through hole.

In some embodiments, the thermal field comprises a bottom opening; the bottom opening is in sealing connection with a bottom seal.

In some embodiments, the top seal or the bottom seal is a cooling seal, and a cooling medium is introduced into the cooling seal for cooling.

In some embodiments, the crystal preparation apparatus further comprises a sealing sleeve to keep the lifting rod in a sealed environment, wherein one end of the sealing sleeve is hermetically connected with the thermal field top.

In some embodiments, the other end of the sealing sleeve is in sealing connection with the slider of the movement device.

In some embodiments, the temperature field comprises: a first cartridge; a second cartridge disposed inside the first cartridge; a filling body filled in the second cartridge interior and/or a void between the second cartridge and the first cartridge.

Drawings

The present application will be further explained by way of exemplary embodiments, which will be described in detail by way of the accompanying drawings. These embodiments are not intended to be limiting, and in these embodiments like numerals are used to indicate like structures, wherein:

FIG. 1 is a schematic diagram of the structure of an exemplary crystal production apparatus according to some embodiments of the present application;

FIG. 2 is a right side view of an exemplary crystal preparation apparatus according to some embodiments of the present application;

FIG. 3 is a cross-sectional view of an exemplary crystal production apparatus according to some embodiments of the present application;

FIG. 4 is a cross-sectional schematic view of an exemplary furnace shown in accordance with some embodiments of the present application;

FIG. 5 is a schematic view of an exemplary furnace lid according to some embodiments of the present disclosure;

FIG. 6 is a schematic diagram of an exemplary thermal field according to some embodiments of the present application;

FIG. 7 is a schematic diagram of an exemplary thermal field according to yet other embodiments of the present application;

FIG. 8 is a schematic cross-sectional view of an exemplary thermal field shown in accordance with some embodiments of the present application;

FIG. 9 is a schematic structural view of an exemplary viewing member according to some embodiments of the present application;

FIG. 10 is a schematic diagram of an exemplary exercise device according to some embodiments of the present application;

FIG. 11 is a schematic diagram of a pull assembly in an exemplary exercise device according to some embodiments of the present application;

FIG. 12 is a schematic diagram of a structure of a rotating assembly in an exemplary exercise device according to some embodiments of the present application;

FIG. 13 is a schematic diagram of an exemplary weighing apparatus according to some embodiments of the present application.

In the drawing, 100 is a crystal preparation device, 110 is a furnace chamber, 120 is a lifting rod, 130 is a motion device, 140 is a thermal field, 150 is a heat source, 111 is a furnace body, 112 is a furnace cover, 113 is a cooling structure, 1121 is a first through hole, 114 is a furnace frame, 141 is a cylinder, 142 is a filling body, 143 is a first sealing member, 144 is a second sealing member, 1411 is a first opening, 1412 is a second opening, 1441 is a second through hole, 1442 is a third through hole, 1443 is an observation member, 1444 is a fifth through hole, 145 is a crucible, 141-1 is a first cylinder, 141-2 is a second cylinder, 146 is a cover plate, 1461 is a fourth through hole, 1462 is a sixth through hole, 1443-1 is a first portion, 1443-2 is a second portion, 1443-3 is an observation window, 131 is a lifting assembly, 132 is a rotation assembly, 133 is a weighing device, 1312 is a column 1311 is a lead screw, 1314 is a slide block, 1314 is a first driving unit, 1314 is a lifting motor unit, 1314-2 is a lifting driver, 1314-3 is a speed reducer, 1314-4 is a coupling, 1314-5 is a mounting seat, 1321 is a second driving unit, 1321-1 is a rotating motor, 1321-2 is a rotating driver, 1321-3 is a mounting seat, 1322 is a transmission component, 1322-1 is a belt pulley, 1322-2 is a belt, 1331 is a weighing chamber, 1332 is a weighing sensor, 121 is a middle rod, 122 is a seed rod, and 160 is a sealing sleeve.

Detailed Description

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings used in the description of the embodiments will be briefly introduced below. It is obvious that the drawings in the following description are only examples or embodiments of the application, from which the application can also be applied to other similar scenarios without inventive effort for a person skilled in the art. Unless otherwise apparent from the context, or otherwise indicated, like reference numbers in the figures refer to the same structure or operation.

It should be understood that "system", "device", "unit" and/or "module" as used herein is a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, other words may be substituted by other expressions if they accomplish the same purpose.

As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements.

FIG. 1 is a schematic diagram of an exemplary crystal preparation apparatus according to some embodiments of the present application; FIG. 2 is a right side view of an exemplary crystal preparation apparatus according to some embodiments of the present application; FIG. 3 is a cross-sectional view of an exemplary crystal production apparatus according to some embodiments of the present application; FIG. 4 is a cross-sectional schematic view of an exemplary furnace shown in accordance with some embodiments of the present application; fig. 5 is a schematic view of an exemplary furnace lid according to some embodiments of the present application. The crystal production apparatus 100 according to the embodiment of the present application will be described in detail below with reference to fig. 1 to 5. It should be noted that the following examples are only for explaining the present application and do not constitute a limitation to the present application. In some embodiments, the crystal preparation apparatus 100 can be used to prepare various crystals (e.g., scintillation crystals, laser crystals) used in stimulated emission devices.

As shown in fig. 1-3, the crystal preparation apparatus 100 may include a furnace 110, a vacuum device (not shown), a lifting rod 120, and a movement device 130.

The hearth 110 may be a cylinder, a cube, a polygonal prism (e.g., a triangular prism, a pentagonal prism, a hexagonal prism), etc. For example, as shown in FIG. 4, the hearth 110 may be a cylinder with a diameter of 500-1400mm and a height of 600-1600 mm.

In some embodiments, as shown in FIG. 3, a temperature field 140 and a heat source 150 can be disposed within the furnace 110. The thermal field 140 can be used as a place for crystal growth, and the heat source 150 can be used for heating the thermal field 140 to meet the temperature requirement required by crystal growth. In some embodiments, the heat source 150 may be an induction coil. In some embodiments, the parameters of the induction coil may be: the inner diameter is 200-680mm, the height is 155-420mm and the number of turns is 5-9 turns. In some embodiments, the heat source 150 may be vertically concentric with the thermal field 140 and the furnace 110, and located outside the thermal field 140. In some embodiments, the heat source 150 may be coupled to a medium frequency power supply that may cause the heat source 150 to generate an alternating electromagnetic field, thereby heating the thermal field 140. The power rating of the intermediate frequency power supply may be 30-120kW and the operating frequency may be 2.2-15 kH. Further description of temperature field 140 can be found elsewhere in this application (e.g., fig. 6-8 and their descriptions).

In some embodiments, furnace 110 may include a furnace body 111 and a furnace cover 112. The furnace cover 112 may be disposed on top of the furnace body 111. In some embodiments, as shown in fig. 5, a first through hole 1121 may be formed in the furnace cover 112, and the thermal field 140 may be placed through the first through hole 1121. In some embodiments, the height of thermal field 140 can be higher than the height of furnace cover 112, i.e., a portion of thermal field 140 is inside furnace 110 and another portion is outside furnace 110. In some embodiments, the height of thermal field 140 may not be greater than the height of furnace cover 112 (e.g., the upper end surface of thermal field 140 may be flush with furnace cover 112 or may be lower than furnace cover 112), i.e., thermal field 140 is disposed inside furnace 110. In some embodiments, the furnace 110 may be designed to be non-airtight, that is, after the thermal field 140 is placed through the first through hole 1121 formed in the furnace cover 112, the furnace cover 112 may not be sealed with the outer wall of the thermal field 140. The design can facilitate the placement or removal of the thermal field 140 from the furnace 110 and is beneficial to saving manufacturing and maintenance costs.

In some embodiments, as shown in FIG. 5, crystal growing apparatus 100 may further include a cooling structure 113 for cooling furnace 110. In some embodiments, the cooling structure 113 may be disposed on a side wall of the furnace body 111 or the furnace lid 112. In some embodiments, the cooling structure 113 may include at least one ring of metal tubes. The cross-sectional shape of the metal tube may include a circle, square, oval, or other shape. The diameter or side length of the cross section of the copper pipe can be 8-20 mm. The material of the metal tube may include copper, stainless steel, etc. In some embodiments, a cooling medium may be introduced into the cooling structure 113. The cooling medium may include a cooling gas, a cooling liquid (e.g., cooling water or cooling oil), or the like.

In some embodiments, a furnace frame 114 can be further disposed at the bottom of the furnace 110 for carrying the furnace 110, the thermal field 140, the heat source 150, and other components. In some embodiments, the firebox 110 and the frame 114 may be integrally formed. In some embodiments, the firebox 110 may be fixedly attached (e.g., bolted, welded, hinged) to the frame 114. In some embodiments, the firebox 110 may be placed directly on the frame 114. In some embodiments, the stove rack 114 may be a cubic or cylindrical steel frame structure. For example, the stove rack 114 may be a cubic steel frame structure with a length of 1000-1900mm, a width of 750-1700mm, and a height of 1100-2000 mm. In some embodiments, the legs of the stove rack 114 may be round or square steel tubes. In alternative embodiments, the stove rack 114 may be other reasonable structures known to those skilled in the art, and the present application is not limited thereto.

A vacuum device may be connected to the thermal field 140 for placing the interior of the thermal field 140 in a vacuum environment or a pressure environment below the standard atmospheric pressure. For example, the pressure inside the thermal field 140 in the cooled state may be 5.5 × 10^-4Pa. In some embodiments, the vacuum device may include a vacuum pump and a cylinder of inert gas. In some embodiments, the upper portion of the thermal field 140 may be formed with a through holeSo as to realize the fixed connection (such as bolt connection and welding) and communication between the thermal field 140 and the vacuum device through the through hole and the corresponding pipeline. The particular connection of the vacuum device to the thermal field 140 can be seen elsewhere in this application (e.g., fig. 6-8 and their description).

The lift pins 120 may extend at least partially into the thermal field 140 to allow crystal growth.

The moving device 130 can be in driving connection with the lifting rod 120 to move the lifting rod 120 up and down and/or rotate. Further description of the exercise device 130 can be found elsewhere in this application, for example, in FIGS. 10-12 and their description.

It should be noted that the above description of crystal production apparatus 100 is intended for purposes of illustration and description only and is not intended to limit the scope of applicability of the present application. Various modifications and alterations to crystal preparation apparatus 100 will be apparent to those skilled in the art in light of the present disclosure. However, such modifications and variations are still within the scope of the present application. For example, the crystal preparation apparatus 100 may further include a control system, and the control system may control the movement parameters (e.g., movement direction and/or movement speed) of the movement device 130 according to the requirements of the crystal growth process parameters, so as to realize automatic control of crystal growth, and further reduce the unstable uniformity of crystal growth caused by manual participation.

FIG. 6 is a schematic diagram of an exemplary thermal field according to some embodiments of the present application. As shown in fig. 6, the thermal field 140 may include a barrel 141, a packing body 142, a first sealing member 143, and a second sealing member 144.

The barrel 141 may be a cylinder, a cube, a polygonal prism (e.g., a triangular prism, a pentagonal prism, a hexagonal prism), or the like. In some embodiments, the cartridge 141 may include a first opening 1411 and a second opening 1412, the first opening 1411 may be located at a first end (e.g., a bottom end) of the cartridge 141, and the second opening 1412 may be located at a second end (e.g., a top end) of the cartridge 141. In some embodiments, the cartridge 141 may include a quartz tube, a corundum tube, a zirconium tube, a graphite tube, a carbon fiber tube, a ceramic tube, or a cartridge made of a high temperature resistant material (e.g., borides, carbides, nitrides, silicides, phosphides, sulfides of rare earth metals).

In some embodiments, the inner diameter of the barrel 141 may be 180 and 650 mm. More preferably, the inner diameter of the barrel 141 may be 200 and 630 mm. More preferably, the inner diameter of the cartridge 141 may be 220 and 610 mm. More preferably, the inner diameter of the barrel 141 may be 250 and 580 mm. More preferably, the inner diameter of the barrel 141 may be 270 and 560 mm. More preferably, the inner diameter of the barrel 141 may be 300 and 530 mm. More preferably, the inner diameter of the cartridge 141 may be 310 mm and 520 mm. More preferably, the inner diameter of the cartridge 141 may be 280 and 500 mm. More preferably, the inner diameter of the barrel 141 may be 300 and 480 mm. More preferably, the inner diameter of the cartridge 141 may be 320 and 450 mm. More preferably, the inner diameter of the barrel 141 may be 350 and 430 mm. More preferably, the inner diameter of the barrel 141 may be 370mm and 430 mm. More preferably, the inner diameter of the barrel 141 may be 400 and 420 mm.

In some embodiments, the thickness of the barrel 141 may be 1-15 mm. More preferably, the thickness of the barrel 141 may be 3-12 mm. More preferably, the thickness of the barrel 141 may be 5-10 mm. More preferably, the thickness of the barrel 141 may be 6-9 mm. More preferably, the thickness of the barrel 141 may be 7-8 mm.

In some embodiments, the height of the cartridge 141 may be 600-1800 mm. More preferably, the height of the barrel 141 may be 700 and 1700 mm. More preferably, the height of the barrel 141 may be 800-1600 mm. More preferably, the height of the cartridge 141 may be 900 and 1500 mm. More preferably, the height of the cartridge 141 may be 1000 and 1400 mm. More preferably, the height of the cartridge 141 may be 1100 and 1300 mm. More preferably, the height of the cartridge 141 may be 1150-1250 mm. More preferably, the height of the cartridge 141 may be 1160-1240 mm. More preferably, the height of the cartridge 141 may be 1170-1230 mm. More preferably, the height of the cartridge 141 may be 1180-1220 mm. More preferably, the height of the cartridge 141 may be 1190-1210 mm. More preferably, the height of the cartridge 141 may be 1195 and 1205 mm.

The filling body 142 may be filled in the barrel 141 to keep the thermal field 140 warm. In some embodiments, the filler body 142 may be made of a refractory material, such as silicon oxide, aluminum carbide, zirconium oxide, graphite, carbon fiber, ceramic, borides, carbides, nitrides, silicides, phosphides, sulfides of rare earth metals, and the like. In some embodiments, the filler 142 may be a granular substance, such as zircon sand (a silicate compound of zirconium), zirconia particles, alumina particles, zirconia felt, zirconia bricks, alumina bricks, or other high temperature resistant granular materials.

In some embodiments, the particle size of the filler 142 may be 5-200 mesh. More preferably, the particle size of the filling 142 may be 10-190 mesh. More preferably, the particle size of the packing 142 may be 20-180 mesh. More preferably, the particle size of the packing 142 may be 30-170 mesh. More preferably, the particle size of the packing 142 may be 40-160 mesh. More preferably, the particle size of the packing 142 may be 50-150 mesh. More preferably, the particle size of the packing 142 may be 60-140 mesh. More preferably, the particle size of the packing 142 may be 70-130 mesh. More preferably, the particle size of the packing 142 may be 80-120 mesh. More preferably, the particle size of the packing 142 may be 90-110 mesh. More preferably, the particle size of the packing 142 may be 95-105 mesh.

In some embodiments, the packing 142 may be a felt-like substance, such as zirconia felt. In some embodiments, the filler body 142 may be a brick-like substance, such as zirconia bricks, alumina bricks, and the like. The size of the brick-shaped packing body filled in the inside of the second cylinder may be smaller than the inner diameter of the second cylinder, and the upper surface of the brick-shaped packing body may be made in an arc shape to place the crucible 145. In some embodiments, the filler body 142 may be a mixture of any two or more of particulate matter, bricks, or felts. For example, the filler 142 may be a mixture including one or more of zirconia felt and zircon sand, zirconia particles, alumina particles, zirconia bricks, alumina bricks, and the like, or other high temperature resistant particulate materials.

In some embodiments, the packing 142 can coat a portion of the crucible 145 (which is used to contain the reaction materials), for example, the bottom and sidewalls. To prevent the packing 142 from dropping into the crucible 145 to contaminate the reaction material, the upper edge of the crucible 145 may be higher than the packing height of the packing 142. In some embodiments, parameters associated with the packing 142 (e.g., thickness, height, tightness) can affect the position of the crucible 145, the size of the heat sink space inside the thermal field 140, the temperature gradient required for crystal growth, and the like. Therefore, different crystal growth requirements can be met by changing relevant parameters of the filling body 142. In some embodiments, the crucible 145 may be made of iridium metal (Ir), molybdenum metal (Mo), tungsten metal (W), rhenium metal (Re), graphite (C), tungsten-molybdenum alloy, or the like. Preferably, the crucible 145 can be an iridium crucible. In some embodiments, the crucible 145 and the barrel 141 can be concentrically arranged.

In some embodiments, the diameter of the crucible 145 can be 60 to 400 mm. More preferably, the diameter of the crucible 145 can be 80 to 370 mm. More preferably, the diameter of the crucible 145 can be 100 and 350 mm. More preferably, the diameter of the crucible 145 can be 120-330 mm. More preferably, the diameter of the crucible 145 can be 150-300 mm. More preferably, the diameter of the crucible 145 can be 170 and 270 mm. More preferably, the diameter of the crucible 145 can be 200 and 250 mm. More preferably, the diameter of the crucible 145 can be 210 and 240 mm. More preferably, the diameter of the crucible 145 can be 220-230 mm.

In some embodiments, the thickness of the crucible 145 can be from 2 to 4 mm. More preferably, the thickness of the crucible 145 can be 2.2 to 3.8 mm. More preferably, the thickness of the crucible 145 can be 2.5 to 3.5 mm. More preferably, the thickness of the crucible 145 can be 2.6 to 3.4 mm. More preferably, the thickness of the crucible 145 can be 2.7 to 3.3 mm. More preferably, the thickness of the crucible 145 can be from 2.8 to 3.2 mm. More preferably, the thickness of the crucible 145 can be 2.9 to 3.1 mm.

In some embodiments, the height of the crucible 145 can be 60 to 250 mm. More preferably, the height of the crucible 145 can be 80 to 220 mm. More preferably, the height of the crucible 145 can be 100 and 200 mm. More preferably, the height of the crucible 145 can be 110 and 190 mm. More preferably, the height of the crucible 145 can be 120-180 mm. More preferably, the height of the crucible 145 can be 130-170 mm. More preferably, the height of the crucible 145 can be 140 and 160 mm. More preferably, the height of the crucible 145 can be 145-155 mm.

The first sealing member 143 can be disposed at a first end (e.g., a bottom end) of the barrel 141 and can be sealingly coupled to the first opening 1411 (e.g., glued or snapped together via a sealing ring). The second seal 144 may be disposed at a second end (e.g., a top end) of the barrel 141 and sealingly coupled to the second opening 1412 (e.g., glued or snapped by a sealing ring). In some embodiments, the first seal 143 or the second seal 144 may be a flange. In some embodiments, the first sealing element 143 or the second sealing element 144 may be a cooling flange, and a cooling medium (e.g., cooling gas, cooling water, and cooling oil) may be introduced into the cooling flange for cooling, so as to prevent the sealing performance of the barrel 141 from being affected due to an excessively high temperature of a connecting element (e.g., a silicone sealing ring) where the first sealing element 143 or the second sealing element 144 is connected to the barrel 141.

In some embodiments, a second through hole 1441 may be formed in the second sealing member 144, and the thermal field 140 may be hermetically connected (e.g., bolted or welded) to the vacuum device through the second through hole 1441. In some embodiments, the second sealing member 144 can be provided with a third through hole 1442, and the lifting rod 120 can extend into the barrel 141 through the third through hole 1442 to be placed above the crucible 145 for crystal growth.

In some embodiments, a viewing member 1443 may be further disposed on the second sealing member 144, and the viewing member 1443 may be connected to the second sealing member 144 through a fifth through hole 1444 of the second sealing member 144. In some embodiments, the viewing member 1443 can be a tubular member that is closed at one end (upper end) and open at one end (lower end). As shown in FIG. 9, the viewing member 1443 can include a first portion 1443-1, a second portion 1443-2, and a viewing window 1443-3, wherein the first portion 1443-1 is open at a lower end.

The shape and/or size of the lower end of the first portion 1443-1 matches the shape and/or size of the fifth through hole 1444 to enable a fixed connection, e.g., riveting, screwing, etc., of the viewing member 1443 with the second seal 144. The matching of the shape and/or size of the lower end of the first portion 1443-1 with the shape and/or size of the fifth through hole 1444 may be that the shape of the fifth through hole 1444 is consistent or substantially consistent with the shape of the lower end of the first portion 1443-1, and the size of the fifth through hole 1444 is greater than the size of the lower end of the first portion 1443-1 and the difference between the size of the fifth through hole 1444 and the size of the lower end of the first portion 1443-1 is less than a first preset size threshold (e.g., 3 mm). The first preset size threshold may be a default value or may be adjusted according to different situations.

The second portion 1443-2 protrudes beyond the second seal 144 after the viewing member 1443 is coupled to the second seal 144. The second portion 1443-2 may have a size equal to or greater than the size of the first portion 1443-1.

The viewing window 1443-3 may be disposed on top of the viewing member 1443 and made of a transparent material, such as quartz, Polymethylmethacrylate (PMMA), Polystyrene (PS), Polycarbonate (PC), or the like. A user (e.g., a factory worker) can understand the conditions inside the thermal field 140 through the observation window 1443-3.

FIG. 7 is a schematic illustration of an exemplary thermal field according to yet other embodiments of the present application; FIG. 8 is a schematic cross-sectional view of an exemplary thermal field according to some embodiments of the present application. In some embodiments, temperature field 140 may include two cylinders. As shown in fig. 7, the thermal field 140 may include a first barrel 141-1, a second barrel 141-2, a packing body 142, a first sealing member 143, a second sealing member 144, and a cover plate 146.

The first barrel 141-1 and the barrel 141 may be barrels of the same material, shape, and/or size. In some embodiments, the first cartridge 141-1 may include a first opening 1411 and a second opening 1412, the first opening 1411 may be located at a first end of the first cartridge 141-1 and the second opening 1412 may be located at a second end of the first cartridge 141-1. For more details on the first cartridge 141-1, reference may be made to the above description of the cartridge 141, which is not repeated here.

The second barrel 141-2 may be disposed inside the first barrel 141-1. In some embodiments, the second barrel 141-2 may be made of a material having heat resistance so that the temperature in the thermal field 140 may be maintained stable during the crystal growth process. The second cartridge 141-2 may include a quartz tube, a corundum tube, a zirconium tube, a graphite tube, a carbon fiber tube, a ceramic tube, or a cartridge made of a high temperature resistant material (e.g., boride, carbide, nitride, silicide, phosphide, sulfide). Preferably, the second cylinder 141-2 may be a zirconium tube made of zirconium oxide.

In some embodiments, the second barrel 141-2 may have an inner diameter of 70-300 mm. Preferably, the inner diameter of the second cylinder 141-2 may be 100 and 270 mm. More preferably, the inner diameter of the second barrel 141-2 may be 120 and 250 mm. More preferably, the inner diameter of the second barrel 141-2 may be 150 and 220 mm. More preferably, the inner diameter of the second barrel 141-2 may be 170 and 200 mm. More preferably, the inner diameter of the second barrel 141-2 may be 180 and 270 mm.

In some embodiments, the thickness of the second barrel 141-2 may be 8-30 mm. More preferably, the thickness of the second cylinder 141-2 may be 10-30 mm. More preferably, the thickness of the second cylinder 141-2 may be 15-25 mm. More preferably, the thickness of the second barrel 141-2 may be 16-24 mm. More preferably, the thickness of the second cylinder 141-2 may be 17-23 mm. More preferably, the thickness of the second cylinder 141-2 may be 18-22 mm. More preferably, the thickness of the second cylinder 141-2 may be 19-21 mm.

In some embodiments, the height of the second barrel 141-2 may be less than the height of the first barrel 141-1. In some embodiments, the second barrel 141-2 may have the same height as the first barrel 141-1.

The packing body 142 may be filled in the inside of the second barrel 141-2 and/or a gap between the second barrel 141-2 and the first barrel 141-1. When the filling body 142 is filled in the gap between the second tube 141-2 and the first tube 141-1, if the first tube 141-1 has cracks, the filling body 142 can serve as a heat insulating layer to prevent the inside of the thermal field 140 from being directly communicated with the outside to cause severe changes of temperature gradients, and play a role in buffering temperature jump, thereby reducing the influence on crystal growth caused by the temperature jump.

In some embodiments, the packing 142 can coat a portion of the crucible 145 (which is used to contain the reaction materials), for example, the bottom and sidewalls. In some embodiments, the filling height of the filling body 142 in the gap between the second barrel 141-2 and the first barrel 141-1 may be less than or equal to the height of the second barrel 141-2. In some embodiments, the first cylinder 141-1, the second cylinder 141-2, and the crucible 145 may be concentrically arranged. For example, as shown in FIG. 8, the temperature field 140 comprises a first cylinder 141-1, a packing body 142, a second cylinder 141-2, a packing body 142 and a crucible 145 in sequence from the outside to the inside. For more on the packing 142 and the crucible 145, reference can be made to the foregoing description and will not be repeated here.

The first sealing member 143 can be disposed at a first end (e.g., a bottom end) of the first cartridge 141-1 and can be sealingly coupled (e.g., glued or snapped together via a sealing ring) to the first opening 1411. The second sealing member 144 may be disposed at a second end (e.g., a top end) of the first barrel 141-1 and sealingly coupled to the second opening 1412 (e.g., glued or snapped by a sealing ring). In some embodiments, a second through hole 1441 may be formed in the second sealing member 144, and the thermal field 140 may be hermetically connected (e.g., bolted or welded) to the vacuum device through the second through hole 1441. In some embodiments, the second sealing member 144 can have a third through hole 1442, and the lifting rod 120 can extend into the first barrel 141-1 through the third through hole 1442. For more on the first sealing member 143 and the second sealing member 144, reference may be made to the foregoing description, and the description thereof is omitted.

In some embodiments, a view 1443 may be disposed on the second seal 144. Further details regarding the viewing member 1443 may be found elsewhere in the present application, such as in FIG. 9 and its description.

The cover plate 146 may be disposed on the top of the second barrel 141-2. In some embodiments, the cover plate 146 may be fixedly coupled to the second barrel 141-2, e.g., welded, riveted, bolted, bonded, etc. In some embodiments, the cover plate 146 may be made of a material with good thermal insulation performance to achieve the function of thermal insulation. For example, the cover plate 146 may be an alumina plate, a zirconia plate, a ceramic plate, a metal plate, or other high temperature resistant material (e.g., borides, carbides, nitrides, silicides, phosphides, or sulfides of rare earth metals). The diameter of the cover plate 146 is determined by the inner diameter of the first cartridge 141-1 and the outer diameter of the second cartridge 141-2. In some embodiments, the cover plate 146 may completely conform to the inner wall of the first barrel 141-1, and the diameter of the cover plate 146 may be greater than or equal to the outer diameter of the second barrel 141-2 and less than the inner diameter of the first barrel 141-1. Since the cover plate 146 completely covers the opening at the upper end of the second barrel 141-2, the packing 142 filled in the gap between the first barrel 141-1 and the second barrel 141-2 can be prevented from falling into the second barrel 141-2 to contaminate the reaction material in the crucible 145.

In some embodiments, the cover plate 146 may be provided with a fourth through hole 1461 corresponding to the third through hole 1442, so that the lifting rod 120 can extend into the second cylinder 141-2 through the third through hole 1442 and the fourth through hole 1461 to be placed above the crucible 145 for crystal growth. "the fourth through hole 1461 corresponds to the third through hole 1442" may be that the direction of the center line of the fourth through hole 1461 is consistent or substantially consistent with the direction of the center line of the third through hole 1442, and the distance between the center line of the fourth through hole 1461 and the center line of the third through hole 1442 is smaller than a second preset threshold (e.g., 3 mm). The second preset size threshold may be a default value or may be adjusted according to different situations.

In some embodiments, the cover plate 146 may further have a sixth through hole 1462 corresponding to the fifth through hole 1444, so that the user can observe the inside of the second barrel 141-2 through the observation window 1443. "the sixth through hole 1462 corresponds to the fifth through hole 1444" may be that the direction of the center line of the sixth through hole 1462 is consistent or substantially consistent with the direction of the center line of the fifth through hole 1444 and the distance between the center line of the sixth through hole 1462 and the center line of the fifth through hole 1444 is smaller than a third preset threshold (e.g., 2 mm). The third preset size threshold may be a default value or may be adjusted according to different situations.

FIG. 10 is a schematic diagram of an exemplary exercise device according to some embodiments of the present application; FIG. 11 is a schematic diagram of a pull assembly in an exemplary exercise device according to some embodiments of the present application; FIG. 12 is a schematic diagram of a structure of a rotating assembly in an exemplary exercise device according to some embodiments of the present application; FIG. 13 is a schematic diagram of an exemplary weighing apparatus according to some embodiments of the present application. The exercise apparatus 130 according to the embodiment of the present application will be described in detail below with reference to fig. 10 to 13. It should be noted that the following examples are only for explaining the present application and do not constitute a limitation to the present application.

As shown in fig. 10, the moving device 130 may include a pulling assembly 131 and a rotating assembly 132 for controlling the up-and-down movement and rotation of the pulling rod 120, respectively.

As shown in fig. 11, the pulling assembly 131 may include a column 1311, a lead screw 1312, a slider 1313, and a first driving unit 1314.

The vertical column 1311 may be provided with a slide rail, and the lower end of the vertical column 1311 may be fixedly connected (e.g., bolted, welded, hinged, clamped, etc.) to the furnace frame 114, so that the pulling assembly 131 may be fixed to the furnace frame 114. The lead screw 1312 may be disposed in parallel with the slide rail. In some embodiments, the lead screw 1312 may be a ball screw. In some embodiments, the effective stroke of the lead screw 1312 can be 300-1200mm, the lead can be 5-20mm, and the diameter can be 16-35 mm. In some embodiments, the plumb of the lead screw 1312 may be less than 0.2 °. The sliding block 1313 can be sleeved on the screw rod 1312 and is in threaded fit with the screw rod 1312; at least a part of the sliding block 1313 is located in the sliding rail, and the sliding block 1313 can be driven to move up and down along the sliding rail by the rotation (forward rotation or reverse rotation) of the screw 1312.

The first drive unit 1314 may include a pull motor 1314-1, a pull drive 1314-2, a reducer 1314-3, a coupling 1314-4, and a mount 1314-5. The pull motor 1314-1, pull driver 1314-2, reducer 1314-3, and coupling 1314-4 may be fixedly mounted (e.g., bolted, welded, or hinged) to the top of the mast 1311 via a mount 1314-5. In some embodiments, the first driving unit 1314 may be connected to the lead screw 1312 to drive the lead screw to rotate, so as to further drive the sliding block 1313 to move up and down along the sliding rail. For example, one end of the lead screw 1312 may be fixedly coupled (e.g., bolted, welded, hinged, clamped, etc.) to the reducer 1314-3 via the coupling 1314-4. By controlling the direction and/or speed of rotation of the pull motor 1314-1, the direction and/or speed of rotation of the lead screw 1312 can be controlled. Specifically, the control system may send signals to the pull driver 1314-2 to control the rotational direction and rotational speed of the pull motor 1314-1. After the speed is reduced by the speed reducer 1314-3, the lead screw 1312 is driven to rotate in a proper rotating direction and/or rotating speed through the transmission action of the speed reducer 1314-3 and the coupling 1314-4, so that the slide block 1313 is further driven to move up and down at a proper speed, that is, the rotating position of the lead screw 1312 is converted into the vertical displacement of the slide block 1313. In some embodiments, the pull rate of pull motor 1314-1 may be 0.1-10mm/h, the fast pull rate may be 0.1-3600mm/h, and the precision is > 0.01 mm/h.

In some embodiments, the crystal preparation apparatus 100 may further include a weighing device 133 for detecting the weight of the crystal on the lifting bar 120. As shown in fig. 12, the weighing device 133 may be disposed on a sliding block 1313, and the up-and-down movement of the sliding block 1313 may drive the weighing device 133 to move up and down. In some embodiments, the weighing device 133 may be disposed on the sliding block 1313 by bolting, welding, hinging, clamping, or the like. In some embodiments, the weighing device 133 may be placed on the block 1313 without any form of connection, relying only on the weight of the weighing device 133 to stabilize on the block 1313.

In some embodiments, the control system may have a signal connection with the weighing device 133 for receiving an output signal of the weighing device 133 (e.g., the weight of the crystal on the lifting rod 120). In some embodiments, the output signal of the weighing device 133 may be output through a mercury slip ring. By receiving the output signal of the weighing device 133, the control system can determine the weight of the crystal, the increasing speed of the weight of the crystal, and other information, and further determine the crystallization speed of the crystal. Depending on the crystallization rate of the crystal, the control system may further determine the temperature of the thermal field 140 and send a control signal to the power management portion of the heat source 150 to control the temperature of the thermal field 140.

As shown in fig. 12, the rotating assembly 132 may include a second driving unit 1321 and a transmission assembly 1322. In some embodiments, the transmission assembly 1322 may be connected to the weighing device 133, and the second driving unit 1321 may drive the weighing device 133 to rotate through the transmission assembly 1322 to control the rotation of the lifting rod 120. In some embodiments, the weighing device 133 can rotate at 0.1-88 rpm with an accuracy of 0.1 rpm.

In some embodiments, the second driving unit 1321 may include a rotary motor 1321-1, a rotary driver 1321-2, and a mount 1321-3. The rotary motor 1321-1 and the rotary actuator 1321-2 may be fixedly disposed (e.g., bolted, welded, hinged, etc.) to the block 1313 via a mounting block 1321-3. When the sliding block 1313 moves up and down, the rotating assembly 132 and the weighing device 133 can be driven to move up and down. In some embodiments, drive assembly 1322 may include a pulley 1322-1 and a belt 1322-2. An output rotation shaft of the second driving unit 1321 is connected to a rotation shaft of the pulley 1322-1, and the rotation direction and/or rotation speed of the pulley 1322-1 can be controlled by controlling the rotation direction and/or rotation speed of the rotating motor 1321-1. In some embodiments, one or more belts may be disposed around the pulley 1322-1 and the weighing device 133, and the pulley 1322-1 may rotate the weighing device 133 through the belt connection. Specifically, the control system may send a signal to the rotation driver 1321-2 to control the rotation direction and/or the rotation speed of the rotation motor 1321-1, and further drive the weighing device 133 to rotate in the proper rotation direction and/or rotation speed through the transmission of the pulley 1322-1 and the belt 1322-2. In some alternative embodiments, drive assembly 1322 may be a gear and chain drive assembly, including gears and chains. The output rotation shaft of the second driving unit 1321 may be connected with a gear. The outer wall of the weighing device 133 may be provided with a toothed structure, a chain may be sleeved on the gear and the weighing device 133, and the second driving unit 1321 is connected to drive the weighing device 133 to rotate through the gear chain.

As shown in fig. 13, the weighing apparatus 133 may include a weighing chamber 1331 and a load cell 1332. In some embodiments, a load cell 1332 may be disposed inside the weighing chamber 1331. In some embodiments, load cell 1332 may include an opto-electronic sensor, a hydraulic sensor, an electromagnetic sensor, a capacitive sensor, a pole-deformation sensor, a vibration sensor, a gyroscopic sensor, a resistive strain gauge sensor, or the like. In some embodiments, load cell 1332 may be secured (e.g., bolted, welded, hinged, snapped, etc.) to lifting rod 120 at one end and to the top of weighing chamber 1331 at the other end.

In some embodiments, as shown in fig. 13, the lifting rod 120 may include at least a center rod 121 and a seed rod 122. In some embodiments, one end of the center pole 121 can be fixedly attached (e.g., bolted, welded, hinged, snapped, etc.) to the weighing chamber 1331. As shown in fig. 12, the center bar 121 may pass through a through hole provided on the slider 1313. Bearings may be provided above and below the through-holes to facilitate rotation of the weighing chamber 1331 and thus rotation of the lifting rod 120. In some embodiments, the center rod 121 may have a hollow structure through which the seed rod 122 may pass through the center rod 121. In some embodiments, one end of the seed shaft 122 may be coupled to the load cell 1332 (e.g., bolted, welded, hinged, snapped, etc.), and the other end of the seed shaft 122 may be used to attach a seed crystal to seed the crystal growth. In some embodiments, the seed rod 122 may be made of iridium, molybdenum, ceramic, stainless steel, or other high temperature resistant materials. The seed crystal on the seed rod 122 can be driven to move up and down and/or rotate in a suitable direction and/or speed by the weighing device 133 moving up and down and/or rotating in a suitable direction and/or speed. The seed rod 122 may be positioned within the thermal field 140 and above the crucible 145 so that crystals may be grown along the seed of the seed rod 122. The growth rate of the crystal can be controlled by controlling the rotational direction, rotational speed, and/or up-and-down movement speed of the seed crystal on the seed shaft 122.

In some embodiments, as shown in FIGS. 1-3, the crystal growing apparatus 100 may further include a sealing sleeve 160 to keep the lift pins 120 in a sealed environment. In some embodiments, one end of sealing sleeve 160 may be sealingly connected to the top of thermal field 140. Specifically, one end of the sealing sleeve 160 can be sealingly connected with the third through hole 1442 on the second sealing member 144 to achieve the sealing connection of the sealing sleeve 160 with the thermal field 140. For example, the third through-hole 1442 may be sealingly connected (e.g., welded, threaded, or bolted) to one end of a length of tubing, and the other end of the length of tubing sealingly connected (e.g., welded or bolted) to one end of the sealing sleeve 160. In some embodiments, the other end of the sealing sleeve 160 may be sealingly connected (e.g., welded, glued, or bolted) to the lower end face of the sliding block 1313. In some embodiments, the sealing sleeve 160 may be a telescoping sleeve such that the up and down movement or rotation of the lifting bar 120 is not limited by the size of the sealing sleeve 160.

The upper end and the lower end of the sealing sleeve 160 are respectively connected with the top of the thermal field 140 and the lower end surface of the sliding block 1313 in a sealing manner, so that the lifting rod 120 can be in a completely closed environment. In addition, the thermal field 140 is hermetically connected to the vacuum device, i.e., the vacuum device, the thermal field 140 and the sealing sleeve 160 form a sealed space, so that the lifting rod 120 is located in the sealed space. The interior of the thermal field 140 can be in a vacuum environment or an inert gas pressure environment lower than the standard atmospheric pressure by vacuum pumping or vacuum pumping and supplementing inert gas to replace the air in the thermal field 140, thereby ensuring the uniformity and consistency of crystal growth.

It should be noted that the above description of the motion device 130 and the weighing device 133 is for illustration and explanation only and does not limit the scope of application of the present application. Various modifications and alterations will occur to those skilled in the art in light of the present application. However, such modifications and variations are intended to be within the scope of the present application. For example, the slider 1313 may be provided with a baffle. The baffle can eliminate the influence of hot air flow radiated from the first through hole 1121 of the furnace cover 112 on the weighing device 133, so that the weighing device 133 has smaller weight signal fluctuation and more accurate weighing.

In some embodiments, preparing crystals by crystal preparation apparatus 100 may include the steps of:

(1) installing a furnace frame and a hearth: the furnace frame 114 and the bottom of the hearth 110 are installed and leveled, and the levelness is 0.05 mm/m;

(2) installing a motion device: the movement device 130 is installed, the verticality of the screw rod 1312 is adjusted to be less than 0.2 degree, and meanwhile, the vertical distance between the upper end and the lower end is less than 0.5 mm;

(3) adjusting concentricity: installing a heat source 150 (induction coil) according to the requirements of the crystal growth process;

adjusting the first cylinder 141-1 and the second cylinder 141-2 in the temperature field 140 to make the concentricity of the two cylinders less than 1 mm; the crucible 145 is assembled according to the process requirements, and the concentricity of the heat source 150, the temperature field 140 and the crucible 145 is less than 1 mm; adjusting the movement device 130 to enable the seed rod 122 to be concentric with the temperature field 140, wherein the concentricity is less than 0.5mm, and the vertical distance between the two ends of the seed rod from top to bottom or from bottom to top is less than 0.5 mm; installing a furnace cover 112, and adjusting the furnace cover 112 to be concentric with the temperature field 140, wherein the concentricity is less than 1 mm;

(4) vacuumizing; installing a sealing sleeve 160 and a vacuum system, and when the hearth 110 is cooled, starting a vacuum pump to pump vacuum for 3 hours to a limit vacuum, or starting the vacuum pump to pump vacuum for 3 hours and supplementing inert gas to an inert gas pressure environment lower than or higher than the standard atmospheric pressure so as to detect the tightness of the whole equipment system;

(5) preparing crystal growth: cooling water is introduced, various parameters of crystal growth are set, the seed crystal is slowly lowered in the temperature rising process for preheating, and the distance between the seed crystal and the charge level is kept to be 5-15mm all the time so as to avoid seed crystal cracking; after the materials are completely melted, slowly sinking the seed crystal to contact with the melt; adjusting the temperature and sinking the seed crystal by 0.5-2mm to fully melt the seed crystal and the melted material, wherein the interface of the seed crystal and the melted material is complete; after the temperature is proper, starting a control program to enter a crystal automatic growth mode;

(6) controlling the crystal growth: the seed rod 122 is connected with a seed crystal, the rotating speed of the crystal is controlled by controlling the rotating speed of the rotating motor 1321-1, and the pulling speed of the crystal growth is controlled by controlling the rotating speed of the pulling motor 1314-1, so that the crystal grows uniformly; according to the requirements of the crystal growth process parameters, the rotating speed of the rotating motor 1321-1 and the pulling motor 1314-1 is controlled by the output signals of the control system so as to meet the requirements of the crystal growth process parameters.

The above preparation processes are only examples, and the process parameters involved in the preparation processes may be different in different embodiments, and the sequence of the above steps is not unique, and the sequence between the steps may be adjusted in different embodiments, even if one or more steps are omitted. The above examples should not be construed as limiting the scope of the present application.

The beneficial effects that may be brought by the embodiments of the present application include, but are not limited to: (1) the temperature field is hermetically connected with the vacuum device, and the upper end and the lower end of the sealing sleeve are hermetically connected with the top of the temperature field and the lower end face of the sliding block respectively, so that the crystal growth process can be in a vacuum environment, and the uniformity and consistency of crystal growth are facilitated; (2) the sealing elements are arranged at the upper end and the lower end of the temperature field, so that the sealing property of the temperature field can be further improved; (3) the temperature gradient of the temperature field can be adjusted by setting the temperature field to different structures (for example, adjusting the height of the filling body, and adopting the structure of the cylinder or the first cylinder and the second cylinder), so that different crystal preparation requirements are met; (4) the lifting rod is driven to move up and down and rotate by the transmission connection of the moving device and the lifting rod, so that the automatic control of the crystal growth process can be realized, and the lifting and rotating speed of the moving device can be further adjusted according to the growth condition of the crystal. It is to be noted that different embodiments may produce different advantages, and in different embodiments, any one or combination of the above advantages may be produced, or any other advantages may be obtained.

Having thus described the basic concept, it will be apparent to those skilled in the art that the foregoing detailed disclosure is to be considered merely illustrative and not restrictive of the broad application. Various modifications, improvements and adaptations to the present application may occur to those skilled in the art, although not explicitly described herein. Such modifications, improvements and adaptations are proposed in the present application and thus fall within the spirit and scope of the exemplary embodiments of the present application.

Also, this application uses specific language to describe embodiments of the application. Reference throughout this specification to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic described in connection with at least one embodiment of the present application is included in at least one embodiment of the present application. Therefore, it is emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, some features, structures, or characteristics of one or more embodiments of the present application may be combined as appropriate.

Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.

Numerals describing the number of components, attributes, etc. are used in some embodiments, it being understood that such numerals used in the description of the embodiments are modified in some instances by the use of the modifier "about", "approximately" or "substantially". Unless otherwise indicated, "about", "approximately" or "substantially" indicates that the number allows a variation of ± 20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.

The entire contents of each patent, patent application publication, and other material cited in this application, such as articles, books, specifications, publications, documents, and the like, are hereby incorporated by reference into this application. Except where the application is filed in a manner inconsistent or contrary to the present disclosure, and except where the claim is filed in its broadest scope (whether present or later appended to the application) as well. It is noted that the descriptions, definitions and/or use of terms in this application shall control if they are inconsistent or contrary to the statements and/or uses of the present application in the material attached to this application.

Finally, it should be understood that the embodiments described herein are merely illustrative of the principles of the embodiments of the present application. Other variations are also possible within the scope of the present application. Thus, by way of example, and not limitation, alternative configurations of the embodiments of the present application may be viewed as being consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to only those embodiments explicitly described and depicted herein.

Claims

1. A crystal manufacturing apparatus, characterized by comprising:

a hearth;

one part of the temperature field is positioned in the hearth, the other part of the temperature field is positioned outside the hearth, and the temperature field is hermetically connected with a vacuum device;

a lifting rod, at least a portion of which is located within the thermal field; and

and the moving device is in transmission connection with the lifting rod to drive the lifting rod to move up and down and/or rotate.

2. A crystal manufacturing apparatus, characterized by comprising:

the furnace comprises a furnace cover, and a first through hole is formed in the furnace cover;

the temperature field is arranged in the hearth through the first through hole and is in sealing connection with a vacuum device;

3. The crystal preparation apparatus of claim 1 or 2, wherein the furnace is an unsealed structure.

4. The crystal production apparatus of claim 1 or 2,

the thermal field comprises a top opening;

the top opening is connected with a top sealing element in a sealing mode, the top sealing element comprises a second through hole, and the temperature field is connected with the vacuum device in a sealing mode through the second through hole.

5. The crystal production apparatus of claim 4,

the thermal field comprises a bottom opening;

the bottom opening is in sealing connection with a bottom seal.

6. The crystal preparation apparatus of claim 5, wherein the top seal or the bottom seal is a cooling seal that is cooled by a cooling medium.

7. The crystal preparation apparatus of claim 1 or 2, further comprising a sealing sleeve to place the lifting rod in a sealed environment, wherein one end of the sealing sleeve is sealingly connected to the thermal field top.

8. The crystal preparation apparatus of claim 7, wherein the other end of the sealing sleeve is sealingly connected to a slide of the motion device.

9. The crystal preparation apparatus of claim 1 or 2, wherein the thermal field comprises:

a first cartridge;

a second cartridge disposed inside the first cartridge;

a filler body filled in the second cartridge interior and/or a void between the second cartridge and the first cartridge.