CN113574689A - Semiconductor integrated circuit device with power generating function - Google Patents
Semiconductor integrated circuit device with power generating function Download PDFInfo
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- CN113574689A CN113574689A CN202080020452.XA CN202080020452A CN113574689A CN 113574689 A CN113574689 A CN 113574689A CN 202080020452 A CN202080020452 A CN 202080020452A CN 113574689 A CN113574689 A CN 113574689A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J45/00—Discharge tubes functioning as thermionic generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
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Abstract
Provided is a semiconductor integrated circuit device with a power generation function, which can suppress the enlargement of a circuit board. A semiconductor integrated circuit device (200) with a power generation function has a semiconductor integrated circuit device and a thermoelectric element (1). A semiconductor integrated circuit device includes a package (210) housing a semiconductor integrated circuit chip (230). The semiconductor integrated circuit chip (230) has a lower surface facing the circuit board and an upper surface facing the mounting surface. A thermoelectric element (1) comprises: a housing portion having a receiving portion; a first electrode part arranged in the containing part; a second electrode portion that is provided in the accommodating portion, is separated from and opposed to the first electrode portion in the first direction, and has a work function different from that of the first electrode portion; and an intermediate portion that is provided between the first electrode portion and the second electrode portion within the housing portion, and that contains nanoparticles having a work function between that of the first electrode portion and that of the second electrode portion. The case portion is provided on the upper surface side of the semiconductor integrated circuit chip (230).
Description
Technical Field
The present invention relates to a semiconductor integrated circuit device having a power generation function.
Background
Recently, effective use of heat emitted from artificial heat sources is considered. As one of the artificial heat sources, there is a semiconductor integrated circuit device. The semiconductor integrated circuit device emits high heat during operation. At present, this heat is dissipated to the outside of the semiconductor integrated circuit device via a heat sink or the like.
Prior art documents
Patent document
Patent document 1: japanese patent No. 6147901
Disclosure of Invention
Problems to be solved by the invention
In the thermoelectric element disclosed in patent document 1, the work function of the emitter electrode layer is made smaller than that of the collector electrode layer, and the metal nanoparticle dispersion liquid is filled in the space between the electrodes separated by the spherical nano-beads. Thus, the thermoelectric element can generate power without a mechanism for generating a temperature difference between electrodes of the thermoelectric element, such as a seebeck element.
If the thermoelectric element that does not require a temperature difference between the electrodes can generate electric power by obtaining thermal energy generated by the semiconductor integrated circuit device, it is desirable to use the thermoelectric element as an auxiliary power source for electronic equipment using the semiconductor integrated circuit device.
However, the thermoelectric element needs to be mounted on a circuit board or the like, and the circuit board may be increased in size.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a semiconductor integrated circuit device with a power generation function that can suppress an increase in size of a circuit board.
Means for solving the problems
A semiconductor integrated circuit device with a power generation function according to a first aspect of the present invention includes: a semiconductor integrated circuit device; and a thermoelectric element that converts thermal energy emitted from the semiconductor integrated circuit device into electrical energy, wherein the semiconductor integrated circuit device includes a package that houses a semiconductor integrated circuit chip, the semiconductor integrated circuit chip includes a lower surface that faces a circuit board and an upper surface that faces the lower surface, and the thermoelectric element includes: a housing portion having a receiving portion; a first electrode portion provided in the housing portion; a second electrode portion that is provided in the housing portion, is separated from and opposed to the first electrode portion in a first direction, and has a work function different from that of the first electrode portion; and an intermediate portion that is provided between the first electrode portion and the second electrode portion in the housing portion, and that contains nanoparticles having a work function between the work function of the first electrode portion and the work function of the second electrode portion, and the case portion is provided on the upper surface side of the semiconductor integrated circuit chip.
A semiconductor integrated circuit device with a power generating function according to a second aspect of the present invention is the semiconductor integrated circuit device with a power generating function according to the first aspect of the present invention, wherein the thermoelectric element further includes: a first connection wiring electrically connected to the first electrode portion and leading out the first electrode portion to the outside of the housing portion; a second connection wiring electrically connected to the second electrode portion and leading out the second electrode portion to the outside of the housing portion; and a first electrical contact between the first electrode portion and the first connection wiring, and a second electrical contact between the second electrode portion and the second connection wiring are provided in the housing portion, respectively.
A semiconductor integrated circuit device with a power generating function according to a third aspect of the invention is the semiconductor integrated circuit device according to the second aspect of the invention, wherein the case includes a first substrate having a first main surface and a second main surface facing the first main surface and facing the upper surface of the semiconductor integrated circuit chip, and the thermoelectric element further includes: a first external terminal electrically connected to the first connection wiring; and a second external terminal electrically connected to the second connection wiring, wherein the first external terminal and the second external terminal are provided on the first main surface of the first substrate, respectively.
A semiconductor integrated circuit device with a power generation function according to a fourth aspect of the invention is the semiconductor integrated circuit device according to any 1 of the first to third aspects of the invention, wherein the thermoelectric element includes at least 1 of a parallel plate type thermoelectric element and a comb-tooth type thermoelectric element.
A semiconductor integrated circuit device with a power generation function according to a fifth aspect of the invention is characterized in that in any one of 1 to 1 of the first to fourth aspects of the invention, the semiconductor integrated circuit device further includes a power supply circuit to which external input power supplied from the outside and auxiliary input power supplied from the thermoelectric element are inputted, the power supply circuit converting the external input power and the auxiliary input power into semiconductor integrated circuit device input power, and outputting the semiconductor integrated circuit device input power to the semiconductor integrated circuit device.
Effects of the invention
According to the semiconductor integrated circuit device with a power generating function of the first aspect of the present invention, the housing portion of the case portion of the thermoelectric element includes: a first electrode section; a second electrode portion having a different work function from the first electrode portion; and an intermediate portion comprising nanoparticles having a work function between that of the first electrode portion and that of the second electrode portion. Thus, the thermoelectric element can generate power even if a temperature difference does not occur in the thermoelectric element. Therefore, a low-temperature material and a cooler that cools the low-temperature material are not required. The case portion of the thermoelectric element is provided on the upper surface side of the semiconductor integrated circuit chip. Thus, for example, it is not necessary to newly add a region for mounting the thermoelectric element to the circuit board, and the size of the circuit board can be suppressed.
In the semiconductor integrated circuit device with a power generation function according to the second aspect of the invention, the first and second electrical contacts are provided in the housing portion, respectively. Thus, when the semiconductor integrated circuit device with the power generation function is incorporated into a 2-time product, for example, during processing of the semiconductor integrated circuit device with the power generation function, during mounting work of the semiconductor integrated circuit device with the power generation function, or the like, breakage or damage of the first and second electrical contacts can be suppressed. This can reduce the loss of the semiconductor integrated circuit device with a power generation function which may occur in 2-time product manufacturing.
According to the semiconductor integrated circuit device with a power generating function of the third aspect of the invention, the case portion includes the first substrate having the first main surface and the second main surface opposed to the first main surface and opposed to the upper surface of the semiconductor integrated circuit chip. The first and second external terminals are provided on the first main surface of the first substrate, respectively. The first main surface can provide a larger area for the first and second external terminals than for the side surfaces of the case, for example. Further, the side surface of the housing portion is more easily visible to the operator, and the work point is more easily obtained by the work robot. This can facilitate the electrical connection operation between the thermoelectric element and the 2-time product, for example, and can improve the productivity of the 2-time product, for example. In addition, the reliability of the assembly of a 2-time product including a semiconductor integrated circuit device having a power generation function is also improved.
According to the semiconductor integrated circuit device with a power generating function of the fourth invention, the thermoelectric element includes any 1 of the parallel plate type thermoelectric element and the comb-tooth type thermoelectric element. Thus, one configuration example of the thermoelectric element is embodied.
The semiconductor integrated circuit device with a power generation function according to the fifth aspect of the present invention further includes a power supply circuit. The power supply circuit converts external input power supplied from the outside and auxiliary input power supplied from the thermoelectric element into semiconductor integrated circuit device input power and outputs the input power to the semiconductor integrated circuit device. This reduces power consumption of the semiconductor integrated circuit device with a power generation function.
Drawings
Fig. 1 (a) is a schematic cross-sectional view showing an example of the semiconductor integrated circuit device with a power generation function according to the first embodiment, and fig. 1 (b) is a schematic exploded cross-sectional view showing an example of the semiconductor integrated circuit device with a power generation function according to the first embodiment in an exploded manner.
Fig. 2 is a schematic cross-sectional view showing an example of an electronic device using the semiconductor integrated circuit device with a power generation function of the first embodiment.
Fig. 3 (a) is a schematic cross-sectional view showing an example of the thermoelectric element, and fig. 3 (b) is a schematic plan view taken along line IIIB-IIIB in fig. 3 (a).
Fig. 4 is a schematic cross-sectional view showing an example of joining of thermoelectric elements.
Fig. 5 (a) is a schematic cross-sectional view showing one example of the intermediate portion, and fig. 5 (b) is a schematic cross-sectional view showing another example of the intermediate portion.
Fig. 6 (a) and 6 (b) are schematic cross-sectional views showing an example of the thermoelectric element according to the first modification, and fig. 6 (c) is a schematic plan view taken along the VIC-VIC line of fig. 6 (a).
Fig. 7 is a schematic cross-sectional view showing an example of joining of thermoelectric elements according to the first modification.
Fig. 8 is a schematic cross-sectional view showing an example of the slit.
Fig. 9 (a) and 9 (b) are schematic cross-sectional views showing an example of solvent injection.
Fig. 10 is a schematic block diagram showing an example of a semiconductor integrated circuit device with a power generating function according to a second embodiment.
Fig. 11 is a schematic circuit diagram showing an example of a semiconductor integrated circuit device with a power generating function according to a second embodiment.
Fig. 12 is a schematic circuit diagram showing an example of a semiconductor integrated circuit device with a power generation function according to a first modification of the second embodiment.
Detailed Description
Hereinafter, several embodiments of the present invention will be described with reference to the drawings. In each drawing, the height direction is defined as a first direction Z, one planar direction intersecting with, e.g., orthogonal to, the first direction Z is defined as a second direction X, and the other planar direction intersecting with, e.g., orthogonal to, the first direction Z and the second direction X is defined as a third direction Y. In the drawings, the same reference numerals are given to the same parts, and redundant description is omitted.
(first embodiment)
Semiconductor integrated circuit device with power generating function
Fig. 1 (a) is a schematic cross-sectional view showing an example of a semiconductor integrated circuit device with a power generation function according to the first embodiment. Fig. 1 (b) is a schematic exploded cross-sectional view showing an example of the semiconductor integrated circuit device with a power generation function according to the first embodiment in an exploded manner. Fig. 2 is a schematic cross-sectional view showing an example of an electronic device using the semiconductor integrated circuit device with a power generation function of the first embodiment.
As shown in fig. 1 and 2, a semiconductor integrated circuit device with power generation function (hereinafter simply referred to as a semiconductor integrated circuit device) 200 of the first embodiment includes a package 210 and a thermoelectric element 1.
The package 210 is made of, for example, an insulating resin, and houses a semiconductor integrated circuit chip 230 therein. The package 210 is not limited to an insulating resin. The semiconductor integrated circuit chip 230 has a lower surface facing the circuit board 260 and an upper surface facing the lower surface. A plurality of external terminals 220 are provided on the lower surface side of the semiconductor integrated circuit chip 230. The external terminal 220 electrically connects the semiconductor integrated circuit chip 230 to an electric wiring 270 provided on the circuit substrate 260.
The thermoelectric element 1 converts thermal energy emitted from the semiconductor integrated circuit device 200, particularly the semiconductor integrated circuit chip 230, into electric energy. As will be described in detail later, for example, as shown in fig. 3, the thermoelectric element 1 includes: a housing portion 10 having a housing portion 10 d; a first electrode portion 11 provided in the housing portion 10 d; a second electrode portion 12 provided in the housing portion 10d, facing the first electrode portion 11 while being separated therefrom in the first direction Z, and having a work function different from that of the first electrode portion 11; and an intermediate portion 14 that is provided between the first electrode portion 11 and the second electrode portion 12 in the housing portion 10d, and that contains nanoparticles having a work function between the work function of the first electrode portion 11 and the work function of the second electrode portion 12. The case portion 10 is provided on the package 210 on the upper surface side of the semiconductor integrated circuit chip 230. Further, for example, the case 10 may be at least partially housed in the package 210.
The thermoelectric element 1 further includes: a first connection wiring 15a electrically connected to the first electrode portion 11 and leading the first electrode portion 11 out of the housing portion 10 d; and a second connection wiring 16a electrically connected to the second electrode portion 12 and leading the second electrode portion 12 out of the housing portion 10 d. The first connection wiring 15a is electrically connected to an electric wiring 270a provided on the circuit substrate 260 via a first bonding wire 221 a. The second connection wiring 16a is electrically connected to an electric wiring 270b provided on the circuit board 260 via a second bonding wire 221 b.
The semiconductor integrated circuit device 200 is mounted on a circuit board 260 together with another semiconductor integrated circuit device 200b to form a circuit board for an electronic device such as a personal computer.
< thermoelectric element: 1 >, A
The thermoelectric element 1 is electrically insulated from the package 210 and thermally connected to the package 210. The thermoelectric element 1 is provided with one or more than one package 210.
Fig. 3 (a) and 3 (b) are schematic views showing an example of the thermoelectric element 1. The schematic cross section shown in fig. 3 (a) is taken along the line IIIA-IIIA in fig. 3 (b). The schematic cross section shown in fig. 3 (b) is taken along the line IIIB-IIIB in fig. 3 (a). Fig. 4 is a schematic cross-sectional view showing an example of bonding of the thermoelectric element 1. Fig. 4 corresponds to the schematic cross section shown in fig. 3 (a).
As shown in fig. 3 (a) and 3 (b), the thermoelectric element 1 includes a case 10, a first electrode portion 11, a second electrode portion 12, and an intermediate portion 14. The thermoelectric element 1 is bonded to the surface of the package 210 on the upper surface side of the semiconductor integrated circuit chip 230, for example, by the adhesive member 30 (fig. 1 (a) and 1 (b)). Alternatively, the case portion 10 is fixed to the surface of the package 210 on the upper surface side of the semiconductor integrated circuit chip 230 by solder such as solder. The thickness of the thermoelectric element 1 along the first direction Z is about 20 μm to about 6 mm.
In the thermoelectric element 1, the case portion 10 includes a first substrate 10a and a second substrate 10 b. The thickness of each of the first and second substrates 10a and 10b along the first direction Z is, for example, 10 μm or more and 2mm or less. As the material of each of the first and second substrates 10a and 10b, a plate-like material having insulating properties can be selected. Examples of the insulating material include glass such as silicon, quartz, Pyrex (registered trademark), and insulating resin. The first and second substrates 10a and 10b may be, for example, flexible films, other than thin plates. For example, when the first and second substrates 10a and 10b are formed in a flexible film shape, for example, PET (polyethylene terephthalate), PC (polycarbonate), polyimide, or the like can be used. The first and second substrates 10a and 10b may not be insulating. For example, the surface of the semiconductor substrate or the metal substrate may be covered with an insulating film. Examples of such a substrate with an insulating film include a silicon (Si) substrate having a silicon oxide (e.g., SiO) formed on the surface thereof2) A substrate for the membrane.
The first substrate 10a includes, for example, a first support portion 13 a. The first support portion 13a extends from the first substrate 10a toward the second substrate 10b along the first direction Z. The planar shape of the first support portion 13a is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. The second substrate 10b includes, for example, a second support portion 13 b. The second support portion 13b extends from the second substrate 10b toward the first substrate 10a along the first direction Z. The planar shape of the second support portion 13b is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. The thickness of each of the first and second supporting portions 13a and 13b along the first direction Z is, for example, 10nm or more and 10 μm or less. The second support portion 13b is separated from the first support portion 13a, for example, with 2 slits 17a and 17b therebetween.
The first and second supporting portions 13a and 13b may be provided integrally with the first and second substrates 10a and 10b, respectively, or may be provided separately. In the case of the integral arrangement, the material of each of the first and second support portions 13a and 13b is the same as that of the first and second substrates 10a and 10 b. When the first and second support portions 13a and 13b are provided separately, examples of the material of the first and second support portions include silicon oxide and a polymer. Examples of the polymer include polyimide, PMMA (Polymethyl methacrylate), and polystyrene.
The slits 17a and 17b are sealed by sealing members 31a and 31b, respectively. The sealing members 31a and 31b may be integrated. In this case, the sealing member 31a and the sealing member 31b are 1 sealing member 31, and are provided in a ring shape along the outer side surfaces of the first and second support portions 13a and 13b, respectively. Examples of the material of the sealing members 31a and 31b include an insulating resin. Examples of the insulating resin include a fluorine-based insulating resin.
The first electrode portion 11 is disposed in the housing portion 10 d. In the thermoelectric element 1, the first electrode portion 11 is provided on the first substrate 10 a. The second electrode portion 12 is disposed in the housing portion 10 d. In the thermoelectric element 1, the second electrode portion 12 is provided on the second substrate 10 b. The first electrode portion 11 and the second electrode portion 12 constitute 1 pair of parallel flat plate type electrode pairs. The thermoelectric element 1 is a parallel plate type thermoelectric element.
In the thermoelectric element 1, the first electrode portion 11 contains, for example, platinum (work function: about 5.65 eV). The second electrode portion 12 contains, for example, tungsten (work function: about 4.55 eV). The electrode portion having a large work function functions as an anode a (collector electrode), and the electrode portion having a small work function functions as a cathode K (emitter electrode). In the thermoelectric element 1, the first electrode portion 11 is an anode a, and the second electrode portion 12 is a cathode K. In the thermoelectric element 1, an electron emission phenomenon based on an absolute temperature generated between the first electrode portion 11 and the second electrode portion 12 having a work function difference is utilized. Therefore, the thermoelectric element 1 can convert thermal energy into electric energy even when the temperature difference between the first electrode portion 11 and the second electrode portion 12 is small. Further, the thermoelectric element 1 can convert thermal energy into electric energy even when there is no temperature difference between the first electrode portion 11 and the second electrode portion 12. The first electrode portion 11 may be a cathode K, and the second electrode portion 12 may be an anode a.
The thickness of each of the first and second electrode portions 11 and 12 along the first direction Z is, for example, 1nm to 1 μm. More preferably 1nm or more and 50nm or less. The material of each of the first and second electrode portions 11 and 12 can be selected from, for example, metals described below.
Platinum (Pt)
Tungsten (W)
Aluminum (Al)
Titanium (Ti)
Niobium (Nb)
Molybdenum (Mo)
Tantalum (Ta)
Rhenium (Re)
In the thermoelectric element 1, a work function difference may be generated between the first electrode portion 11 and the second electrode portion 12. Therefore, metals other than the above may be selected as the material of the first electrode portions 11 and 12. The materials of the first and second electrode portions 11 and 12 may be selected from alloys, intermetallic compounds, and metal compounds, in addition to the metals described above. The metal compound is a compound obtained by combining a metal element and a nonmetal element. An example of the metal compound is lanthanum hexaboride (LaB)6)。
As the material of the first and second electrode portions 11 and 12, a non-metallic conductive material may be selected. Examples of the non-metallic conductive material include silicon (Si: for example, p-type Si or n-type Si), and a carbon-based material such as graphene.
If a material other than a refractory metal (refractory metal) is selected as the material of the first and second electrode portions 11 and 12, the advantages described below can be obtained. In the present specification, the refractory metals are, for example, W, Nb, Mo, Ta, and Re. When Pt is used for the first electrode portion (anode a)11, Al, Si, Ti and LaB are preferably used for the second electrode portion (cathode K)126At least 1 kind of (1).
For example, Al and Ti have melting points lower than those of the above-mentioned high-melting-point metals. Therefore, Al and Ti each have an advantage of being easily processed as compared with the above-mentioned high melting point metal.
For example, Si is easier to form than the above-mentioned high melting point metal. Therefore, Si has an advantage that the productivity of the thermoelectric element 1 can be further improved in addition to the ease of the processing.
For example, LaB6Has a melting point higher than that of Ti and Nb. However, LaB6Has a melting point lower than that of W, Mo, Ta and Re. LaB6It is easier to process than W, Mo, Ta and Re. Furthermore, LaB6The work function of (A) is about 2.5-2.7 eV. LaB6It is easy to release electrons in comparison with the above high melting point metal. Thus, LaB6The advantage of further improving the power generation efficiency of the thermoelectric element 1 can be obtained.
The first electrode portion 11 and the second electrode portion 12 may have a single-layer structure including the above-described material, or may have a laminated structure including the above-described material.
The first connection wiring 15a of the thermoelectric element 1 is electrically connected to the first electrode portion 11 in the housing portion 10 d. Thereby, the first electrode portion 11 and the first electrical contact 11a of the first connection wiring 15a are disposed in the housing portion 10 d. On the substrate bonding surface 13aa of the first support portion 13a, the planar shape of the first connecting wiring 15a is L-shaped extending in the second direction X and the third direction Y, respectively, as viewed from the first direction Z. This is substantially the same as the planar shape of the first support portion 13 a. The first connection wiring 15a is bonded to the first bonding metal 18a between the first support portion 13a and the second substrate 10 b. The first bonding metal 18a is provided on the second substrate 10 b. The planar shape of the first bonding metal 18a is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. This is substantially the same as the planar shape of the first connection wiring 15a on the substrate bonding surface 13 aa.
The second connection wiring 16a of the thermoelectric element 1 is electrically connected to the second electrode portion 12 in the housing portion 10 d. Thus, the second electrode portion 12 and the second electrical contact 12a of the second connection wiring 16a are disposed in the housing portion 10 d. On the substrate bonding surface 13ba of the second support portion 13b, the planar shape of the second connecting wiring 16a is an L shape extending in the second direction X and the third direction Y, respectively, as viewed from the first direction Z. This is substantially the same as the planar shape of the second support portion 13 b. The second connecting wire 16a is bonded to the second bonding metal 18b between the second support portion 13b and the first substrate 10 a. The second bonding metal 18b is provided on the first substrate 10 a. The planar shape of the second bonding metal 18b is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. This is substantially the same as the planar shape of the second connecting wiring 16a on the substrate bonding surface 13 ba.
The first and second bonding metals 18a and 18b include, for example, metals that can be bonded to the first and second connection wirings 15a and 16 a. Thus, for example, as shown in fig. 4, the second substrate 10b can be bonded to the first substrate 10a by bonding the first connecting wires 15a to the first bonding metals 18a and bonding the second connecting wires 16a to the second bonding metals 18 b. A housing portion 10d is formed in the case portion 10. In the case where, for example, Au is used for the first and second connection wirings 15a and 16a and the first and second bonding metals 18a and 18b, respectively, the first and second connection wirings 15a and 16a can be bonded to the first and second bonding metals 18a and 18b, respectively, by thermocompression bonding. In addition to gold, any metal or alloy can be used for the first and second connection wirings 15a and 16a and the first and second bonding metals 18a and 18b, for example, as long as it can be thermocompression bonded, eutectic bonded, or the like.
In addition, for example, from the viewpoint of suppressing a decrease in power generation efficiency, it is preferable that the work functions of the metals or alloys used for the first and second connecting wirings 15a and 16a and the first and second bonding metals 18a and 18b be between the work function of the first electrode portion 11 and the work function of the second electrode portion 12. In addition, when an intermetallic compound is generated at a bonding portion by bonding of metals to each other such as eutectic bonding, a work function of the generated intermetallic compound is preferably between a work function of the first electrode portion 11 and a work function of the second electrode portion 12.
The first connection wires 15a are also provided on the inner side surface of the first support part 13a, the substrate bonding surface 13aa, and the outer side surface of the first support part 13a, respectively. The first connection wiring 15a leads the first electrode portion 11 out of the housing portion 10 d. The second connecting wires 16a are also provided on the inner surface of the second support portion 13b and the substrate bonding surface 13aa, respectively. The second connecting wiring 16a leads the second electrode portion 12 out of the housing portion 10 d.
The first substrate 10a has a first main surface 10af and a second main surface 10 ab. The second main surface 10ab is opposed to the first main surface 10af and opposed to the upper surface of the semiconductor integrated circuit chip 230. The second main surface 10ab is bonded to the surface of the package 210 on the upper surface side of the semiconductor integrated circuit chip 230 by the bonding member 30, for example. Alternatively, the second main surface 10ab is fixed to the surface of the package 210 on the upper surface side of the semiconductor integrated circuit chip 230 by, for example, a solder. The first and second external case terminals 101 and 102 are provided on the first main surface 10af of the first substrate 10a, respectively. The first outer case terminal 101 is electrically connected to the first connection wiring 15 a. The second outer case terminal 102 is electrically connected to the second connection wiring 16 a. The first main surface 10af has, for example, portions extending outward from the first support portion 13a and the second support portion 13b, respectively. The first outer case terminal 101 is provided, for example, in a portion where the first main surface 10af projects outward from the first support portion 13 a. The second outer case terminal 102 is provided, for example, in a portion where the first main surface 10af projects outward from the second support portion 13 b. In the thermoelectric element 1, the first outer case terminal 101 is obtained from the same conductive material as the first connection wiring 15a by the pattern of the first connection wiring 15 a. The second outer case terminal 102 is made of the same conductive material as the second bonding metal 18b by using the pattern of the second bonding metal 18 b.
Fig. 5 (a) is a schematic cross-sectional view showing an example of the intermediate portion 14. Fig. 5 (b) is a schematic cross-sectional view showing another example of the intermediate portion 14.
As shown in fig. 5 (a), the intermediate portion 14 is provided between the first electrode portion 11 and the second electrode portion 12 in the housing portion 10 d. The intermediate portion 14 comprises nanoparticles 141 having a work function between that of the first electrode portion 11 and that of the second electrode portion 12. The intermediate portion 14 is, for example, a portion for moving the electrons e released from the second electrode portion (cathode K)12 to the first electrode portion (anode a) 11.
An inter-electrode gap G is set along the first direction Z between the first electrode portion 11 and the second electrode portion 12. In the thermoelectric element 1, the inter-electrode gap G is set according to the thickness of each of the first and second support portions 13a and 13b along the first direction Z. An example of the width of the inter-electrode gap G is a finite value of 10 μm or less. The narrower the width of the inter-electrode gap G, the more efficiently the electrons e can be discharged from the second electrode portion (cathode K)12, and the more efficiently the electrons e can be moved from the second electrode portion 12 to the first electrode portion (anode a) 11. Therefore, the power generation efficiency of the thermoelectric element 1 is improved. The narrower the width of the inter-electrode gap G, the thinner the thickness of the thermoelectric element 1 along the first direction Z can be. Therefore, for example, the width of the inter-electrode gap G is preferably narrow. The width of the inter-electrode gap G is more preferably 10nm or more and 100nm or less, for example. The width of the inter-electrode gap G is substantially equal to the thickness of the first and second support portions 13a and 13b along the first direction Z.
The intermediate portion 14 includes, for example, a plurality of nanoparticles 141 and a solvent 142. A plurality of nanoparticles 141 are dispersed within a solvent 142. The intermediate portion 14 is obtained by filling the slit portion 140 with a solvent 142 in which the nanoparticles 141 are dispersed, for example. The nanoparticles 141 have a smaller particle size than the inter-electrode gap G. The particle diameter of the nanoparticles 141 is, for example, a finite value of 1/10 or less of the gap G between electrodes. If the particle diameter of the nanoparticles 141 is set to 1/10 or less of the inter-electrode gap G, the intermediate portion 14 including the nanoparticles 141 can be easily formed in the gap portion 140. This improves workability in producing the thermoelectric element 1.
The nanoparticles 141 include, for example, a conductive material. The value of the work function of the nanoparticles 141 lies, for example, between the value of the work function of the first electrode portion 11 and the value of the work function of the second electrode portion 12. For example, the work function of the nanoparticles 141 has a value in the range of 3.0eV or more and 5.5eV or less. This allows the electrons e emitted to the intermediate portion 14 to be transferred from the second electrode portion 12 to the first electrode portion 11 via the nanoparticles 141, for example. This can further increase the amount of electric energy generated, compared to the case where the nanoparticles 141 are not present in the intermediate portion 14.
As an example of the material of the nano particles 141, at least 1 of gold and silver may be selected. The value of the work function of the nanoparticles 141 may be a value between the value of the work function of the first electrode portion 11 and the value of the work function of the second electrode portion 12. Therefore, the material of the nanoparticles 141 may be selected from conductive materials other than gold and silver.
The particle diameter of the nanoparticles 141 is, for example, a finite value of 1/10 or less of the gap G between electrodes. Specifically, the particle diameter of the nanoparticles 141 is 2nm or more and 10nm or less. The nanoparticles 141 may have a particle diameter of 3nm to 8nm, for example, as an average particle diameter (e.g., D50). The average particle diameter can be measured, for example, by using a particle size distribution meter. As the particle size distribution measuring instrument, for example, a particle size distribution measuring instrument using a laser diffraction scattering method (for example, Nanotrac waveII-EX150 manufactured by MicrotracBEL) may be used.
The nanoparticles 141 have, for example, an insulating film 141a on their surface. As an example of the material of the insulating film 141a, at least 1 of an insulating metal compound and an insulating organic compound can be selected. Examples of the insulating metal compound include silicon oxide and aluminum oxide. Examples of the insulating organic compound include alkanethiol (e.g., dodecanethiol) and the like. The thickness of the insulating film 141a is, for example, a finite value of 20nm or less. When such an insulating film 141a is provided on the surface of the nanoparticles 141, electrons e can move between the second electrode portion (cathode K)12 and the nanoparticles 141 and between the nanoparticles 141 and the first electrode portion (anode a)11, for example, by tunnel effect. Therefore, for example, improvement in power generation efficiency of the thermoelectric element 1 can be expected.
The solvent 142 may be a liquid having a boiling point of 60 ℃ or higher, for example. Therefore, even when thermoelectric element 1 is used in an environment at room temperature (for example, 15 to 35 ℃) or higher, vaporization of solvent 142 can be suppressed. This can suppress deterioration of thermoelectric element 1 due to vaporization of solvent 142. As an example of the liquid, at least 1 of an organic solvent and water may be selected. Examples of the organic solvent include methanol, ethanol, toluene, xylene, tetradecane, and alkanethiol. The solvent 142 may be an insulating liquid having a high resistance value.
As shown in fig. 5 (b), the intermediate portion 14 may contain only the nanoparticles 141 without containing the solvent 142. By including only the nanoparticles 141 in the intermediate portion 14, for example, even when the thermoelectric element 1 is used in a high-temperature environment, it is not necessary to consider vaporization of the solvent 142. This can suppress deterioration of the thermoelectric element 1 in a high-temperature environment.
< action of thermoelectric element 1 >
When thermal energy is supplied to the thermoelectric element 1, electrons e are released from the second electrode portion (cathode K)12 toward the intermediate portion 14, for example. The released electrons e move from the intermediate portion 14 toward the first electrode portion (anode a) 11. The current flows from the first electrode portion 11 toward the second electrode portion 12. In this way, thermal energy is converted into electrical energy.
In the case of the semiconductor integrated circuit device 200, the thermoelectric element 1 includes, in the housing portion 10d of the case portion 10: a first electrode portion 11; a second electrode portion 12 having a different work function from the first electrode portion 11; and an intermediate portion 14 comprising nanoparticles 141 having a work function between that of the first electrode portion 11 and that of the second electrode portion 12. This allows thermoelectric element 1 to generate electric power even if a temperature difference does not occur in thermoelectric element 1. In the thermoelectric element 1, a low-temperature material such as a seebeck element and a cooler for cooling the low-temperature material are not required. As a result of eliminating the need for a low-temperature material and a cooler for cooling the low-temperature material, an increase in the manufacturing cost of the semiconductor integrated circuit device 200 and an increase in the size of the semiconductor integrated circuit device 200 are suppressed, respectively.
Further, according to the semiconductor integrated circuit device 200, the following advantages can be obtained.
(1) The case portion 10 of the thermoelectric element 1 is provided on the upper surface side of the semiconductor integrated circuit chip 230. This eliminates the need to newly secure a region for mounting the thermoelectric element 1 on the circuit board 260, and thus can suppress an increase in the size of the circuit board 260.
(2) Since the increase in the size of the circuit board 260 can be suppressed, the increase in the size of a 2-time product using the semiconductor integrated circuit device 200, for example, a circuit board for an electronic device can also be suppressed.
(3) The first and second electrical contacts 11a and 12a are respectively provided in the housing portion 10 d. Thus, when the semiconductor integrated circuit device 200 is assembled into a 2-time product, for example, during processing of the semiconductor integrated circuit device 200, during mounting work of the semiconductor integrated circuit device 200, or the like, breakage or damage of the first and second electrical contacts 11a and 12a can be suppressed. This can reduce the loss of the semiconductor integrated circuit device 200 that may occur in 2-time product manufacturing.
(4) The case portion 10 includes a first substrate 10a, and the first substrate 10a has a first main surface 10af and a second main surface 10ab facing the first main surface 10af and facing the upper surface of the semiconductor integrated circuit chip 230. The first and second external case terminals 101 and 102 are provided on the first main surface 10af of the first substrate 10a, respectively. The first main surface 10af can provide a larger area for each of the first and second external case terminals 101 and 102 than for the side surface of the case 10, for example. Further, the side surface of the case 10 is more easily visible to the operator, and the work point is more easily obtained by the work robot. This can facilitate the electrical connection between the thermoelectric element 1 and the 2-time product, for example, and can improve the productivity of the 2-time product, for example. In addition, the reliability of the assembly of the 2-time product including the semiconductor integrated circuit device 200 is also improved.
(first embodiment: first modification)
Next, a first modification of the first embodiment will be described. The first modification relates to a modification of the thermoelectric element.
Fig. 6 (a) to 6 (c) are schematic views showing an example of the thermoelectric element 1 according to the first modification. The schematic cross section shown in fig. 6 (a) is along the VIA-VIA line in fig. 6 (c). The schematic section shown in fig. 6 (b) is along the line VIB-VIB in fig. 6 (c). The schematic cross section shown in fig. 6 (c) is along the VIC-VIC line in fig. 6 (a) and fig. 6 (b). Fig. 7 is a schematic cross-sectional view showing an example of joining. Fig. 7 corresponds to the schematic cross section shown in fig. 6 (b).
As shown in fig. 6 (a) to 6 (c), the thermoelectric element 1b of the first modification differs from the thermoelectric element 1 in that the planar shape of the first electrode portion 11 as viewed from the first direction Z and the planar shape of the second electrode portion 12 as viewed from the first direction Z are each of a comb-tooth shape.
The comb-teeth portions of the first and second electrode portions 11 and 12 extend along the third direction Y. The orientations of the comb teeth are opposite to each other in the first electrode portion 11 and the second electrode portion 12. The comb-teeth portion of the first electrode portion 11 and the comb-teeth portion of the second electrode portion 12 are separated from each other and engaged with each other. Thereby, an inter-electrode gap G is defined between the comb-teeth portion of the first electrode portion 11 and the comb-teeth portion of the second electrode portion 12. In the thermoelectric element 1b, the predetermined direction of the inter-electrode gap G is 2 directions of the second direction X (inter-electrode gap Gx) and the third direction Y (inter-electrode gap Gy) (fig. 6 (c)).
The thermoelectric element 1b having a comb-tooth-shaped electrode can be used in addition to the thermoelectric element 1 having a parallel flat plate-shaped electrode.
In the thermoelectric element 1b, since the first and second electrode portions 11 and 12 are comb-shaped, the variation of the inter-electrode gap G due to the heat of the semiconductor integrated circuit chip 230 is smaller than that of the thermoelectric element 1 of the parallel plate type. Thus, for example, thermoelectric element 1b has an advantage that it is easier to suppress a small variation in power generation efficiency than thermoelectric element 1.
Further, the thermoelectric element 1b is further improved as described below.
The case 10 includes a first substrate 10a and a cover 10 c.
The first electrode portion 11, the second electrode portion 12, the first connection wiring 15a, and the second connection wiring 16a are provided on the first main surface 10af
The thermoelectric element 1b will be described in more detail below.
The cover 10c includes a third support portion 13 c. The third support portion 13c extends from the cover 10c toward the first substrate 10a along the first direction Z. The planar shape of the third support portion 13c is a frame shape as viewed from the first direction Z. The cover 10c may be provided integrally with the third support portion 13c, or may be provided separately.
The first and second electrode portions 11 and 12 are respectively disposed in the housing portion 10 d. The housing 10d is obtained in the housing 10 by surrounding the plane of the housing 10d extending in the second direction X and the third direction Y with the lid 10c and surrounding the housing 10d with the third support portion 13c along the second direction X and the third direction Y, respectively.
The first connection wiring 15a is electrically connected to the first electrode portion 11 in the housing portion 10 d. Thereby, the first electrode portion 11 and the first electrical contact 11a of the first connection wiring 15a are disposed in the housing portion 10 d. The second connection wiring 16a is electrically connected to the second electrode portion 12 in the housing portion 10 d. Thus, the second electrode portion 12 and the second electrical contact 12a of the second connection wiring 16a are disposed in the housing portion 10 d.
On the substrate bonding surface 13ca of the third support portion 13c, the planar shape of the first connecting wiring 15a is an L shape extending in the second direction X and the third direction Y, respectively, as viewed from the first direction Z. The first connection wiring 15a is bonded to the first bonding metal 18a between the third support portion 13c and the first substrate 10 a. The first bonding metal 18a is provided on the substrate bonding surface 13ca of the lid body 10 c. The planar shape of the first bonding metal 18a is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. This is substantially the same as the planar shape of the first connection wiring 15a on the substrate bonding surface 13 ca.
On the substrate bonding surface 13ca of the third support portion 13c, the planar shape of the second connecting wiring 16a is an L shape extending in the second direction X and the third direction Y, respectively, as viewed from the first direction Z. The second connecting wire 16a is bonded to the second bonding metal 18b between the third support portion 13c and the first substrate 10 a. The second bonding metal 18b is provided on the substrate bonding surface 13ca of the lid body 10 c. The planar shape of the second bonding metal 18b is an L shape extending in the second direction X and the third direction Y, respectively, when viewed from the first direction Z. This is substantially the same as the planar shape of the second connecting wiring 16a on the substrate bonding surface 13 ca.
Thus, for example, as shown in fig. 7, the lid 10c can be bonded to the first substrate 10a by bonding the first connecting wire 15a to the first bonding metal 18a and bonding the second connecting wire 16a to the second bonding metal 18 b. Then, the housing 10 is provided with the housing 10 d.
The first connecting wiring 15a and the second connecting wiring 16a are separated from each other on the first main surface 10af with the slits 17a and 17b interposed therebetween and do not contact each other. The first and second bonding metals 18a and 18b may be electrically connected to the first and second connection wirings 15a and 16a, respectively. In this case, as shown in fig. 6 (c), the first bonding metal 18a and the second bonding metal 18b may be separated from each other through the slits 17a and 17b so as not to contact each other. This can suppress a short circuit between the first connecting wire 15a and the second connecting wire 16a via the first and second bonding metals 18a and 18 b.
Fig. 8 is a schematic cross-sectional view showing an example of the slit. The schematic cross section shown in fig. 8 is along line VIII-VIII in (c) of fig. 6. As shown in fig. 8, the slits 17a and 17b generate a minute gap 17c in the thermoelectric element 1 b. Therefore, the solvent 142 injected into the gap 140 may leak from the minute gap. Therefore, as shown in fig. 6 (c), sealing members 31a and 31b may be provided between the first substrate 10a and the lid 10c, and the slits 17a and 17b may be closed by the sealing members 31a and 31b, respectively. Thereby, the leakage of the solvent 142 through the slits 17a and 17b can be suppressed.
In the thermoelectric element 1b, a gap Gel1 extending along the first direction Z is provided between the first electrode portion 11 and the lid 10c, and a gap Gel2 is provided between the second electrode portion 12 and the lid 10 c. By providing the slits Gel1 and Gel2, the first and second electrode portions 11 and 12 can be housed in the housing portion 10d, respectively, without a gap being formed between the lid 10c and the first substrate 10 a. The length of the slit Gel1 and the length of the slit Gel2 may be set to be equal to each other or may be set to be different from each other. In the latter case, for example, it can be observed that the surface of either electrode portion is subjected to surface treatment such as coating or surface modification in order to increase the difference between the work function of the first electrode portion 11 and the work function of the second electrode portion 12. Alternatively, it can be observed that the first electrode portion 11 and the second electrode portion 12, which are made of different materials, are formed simultaneously by 1 etching step. Further, the slits Gel1 and Gel2 are provided, so that the upper surfaces of the first electrode portion 11 and the second electrode portion 12 are in contact with the intermediate portion 14. Therefore, the electrons e can be moved through the upper portion (particularly, the upper surface and the corner portion of the upper surface) of the electrode portions 11 and 12, in addition to the facing surfaces of the electrode portions 11 and 12. This can increase the amount of electric energy generated.
Fig. 9 (a) and 9 (b) are schematic cross-sectional views showing an example of solvent injection. The schematic cross section shown in fig. 9 (a) corresponds to the schematic cross section shown in fig. 6 (a). The schematic cross section shown in fig. 9 (b) corresponds to the schematic cross section shown in fig. 6 (b).
As shown in fig. 9 (a) and 9 (b), the lid 10c may be provided with a first filling hole 71a and a second filling hole 71 b. The first and second filling holes 71a and 71b are used, for example, to inject a solvent 142 into the gap portion 140. When the first and second filling holes 71a and 71b are used for injecting the solvent 142, if the gaps Gel1 and Gel2 are located in the gap portion 140, the solvent 142 goes around between the first electrode portion 11 and the second electrode portion 12 via the gaps Gel1 and Gel 2. This provides an advantage that the solvent 142 can be easily filled between the first electrode portion 11 and the second electrode portion 12.
The solvent 142 is injected into the slit portion 140 from, for example, the first filling hole 71 a. At this time, the other second filling hole 71b is used as a hole for air discharge, for example. The solvent 142 may be injected from the first filling hole 71a while the inside of the gap portion 140 is evacuated through the second filling hole 71 b.
As in the first modification, in addition to the thermoelectric element 1 having the parallel flat plate type electrodes, the thermoelectric element 1b having the comb-tooth type electrodes can be used as the thermoelectric element.
(second embodiment)
The second embodiment relates to an example of a power supply circuit 300 that can be used in the semiconductor integrated circuit device 200 of the first embodiment.
Fig. 10 is a schematic block diagram showing an example of a semiconductor integrated circuit device 200 with a power generating function according to a second embodiment.
As shown in fig. 10, the power supply circuit 300 is provided on, for example, a circuit board 320 (the circuit board 320 may be the same as the circuit board 260). The circuit board 320 is provided with, for example, first to sixth external terminals 331a to 331 f. The first external terminal 331a and the second external terminal 331b are electrically connected to an external power supply, for example, the commercial power supply 310. Thereby, the external input power Pin is input to the power supply circuit 300 via the first and second external terminals 331a and 331 b. The third external terminal 331c and the fourth external terminal 331d are electrically connected to the thermoelectric element 1. Thus, the auxiliary input power Pina is input to the power supply circuit 300 via the third and fourth external terminals 331c and 331 d. The third external terminal 331c is electrically connected to the cathode K of the thermoelectric element 1. The fourth external terminal 331d is electrically connected to the anode a of the thermoelectric element 1. The fifth and sixth external terminals 331e and 331f are electrically connected to the package 210. Thus, the power supply circuit 300 outputs LSI input power Pout (semiconductor integrated circuit device input power) via the fifth and sixth external terminals 331e and 331 f.
Fig. 11 is a schematic circuit diagram showing an example of a semiconductor integrated circuit device 200 with a power generating function according to a second embodiment.
As shown in fig. 11, the power supply circuit 300 includes a converter 332. When the external power supply is commercial power supply 310, converter 332 is an AC-DC converter (rectifier circuit). When the external power source is a battery, the converter 332 becomes a DC-DC converter. When the converter 332 is an AC-DC converter, the AC power is rectified into DC power. The rectified dc power is supplied to the current limiting circuit 333. The current limiting circuit 333 limits the dc current to generate and output LSI input power Pout.
The high-potential-side output node N1 of the converter 332 is electrically coupled with the high-potential-side input node N2 of the current limiting circuit 333 via the first switch 334. The connection node N3 of the first switch 334 and the high potential side input node N2 is electrically coupled via the low potential side wiring 335 of the power supply circuit 300 and the capacitor 336. The capacitor 336 is a smoothing capacitor. In addition, the capacitor 336 is connected in parallel with the resistor 337. The resistor 337 is a discharge resistor. Connection node N3 is electrically coupled to cathode K of te element 1 via second switch 338. The first and second switches 334 and 338 are transistors, for example. The high-potential-side output node N4 of the current limiting circuit 333 is electrically coupled to a high-potential-side power supply terminal (denoted by a for convenience) of the package 210. The low-potential-side terminal (K for convenience) of the package 210 and the anode a of the thermoelectric element 1 are electrically coupled to the low-potential-side wiring 335.
When the semiconductor integrated circuit chip 230 in the package 210 is operated, the first switch 334 is turned on and the second switch 338 is turned off. The high potential side output node N1 is electrically connected to one electrode of the capacitor 336, and the capacitor 336 is charged. After the charging of the capacitor 336 is completed, the high-potential-side output node N1 is electrically connected to the high-potential-side input node N2. The converter 332 supplies the current to the current limiting circuit 333. The current limiting circuit 333 limits the supplied current, generates and outputs LSI input power Pout. Thereby, the semiconductor integrated circuit chip 230 in the package 210 operates.
When the semiconductor integrated circuit chip 230 operates, the semiconductor integrated circuit chip 230 generates heat. The heat is transferred to the thermoelectric element 1. The thermoelectric element 1 is finally in a state capable of generating electric power, for example, in a state capable of generating electric current capable of charging the capacitor 336. After the thermoelectric element 1 is in a state capable of generating electricity, the second switch 338 is turned on. The cathode K of the thermoelectric element 1 is electrically connected to one electrode of the capacitor 336. The thermoelectric element 1 supplies current to the current limiting circuit 333 together with the converter 332. Thereby, the semiconductor integrated circuit chip 230 continues to operate.
Further, it is also possible to select, by the first switch 334 and the second switch 338, whether to couple the high-potential-side output node N1 to one electrode of the capacitor 336 or to couple the cathode K of the thermoelectric element 1 to one electrode of the capacitor 336.
For example, when the semiconductor integrated circuit chip 230 is operated, the first switch 334 is turned on, the second switch 338 is turned off, and the semiconductor integrated circuit chip 230 is operated using the external input power Pin. For convenience, the state of operation using the external input power Pin is referred to as a normal energy mode.
After the operation, for example, when the thermoelectric element 1 is in a state in which it can generate a current capable of charging the capacitor 336, the first switch 334 is turned off and the second switch 338 is turned off. The supply source of the electric power is switched from the external input power Pin to the auxiliary input power Pina. Thereby, the operation mode of the semiconductor integrated circuit chip 230 is switched from the normal energy mode to the energy saving mode using the auxiliary input power Pina from the thermoelectric element 1. The switching from the normal energy mode to the energy saving mode can be performed automatically or manually. The energy saving mode generally refers to reducing the power consumption of a commercial power supply or a battery. However, the energy saving mode in the second embodiment is switching to the auxiliary input power Pina different from the normal energy mode.
In addition, the capacitor 336 can also be a smoothing capacitor provided in the power supply circuit 300. When the smoothing capacitor is used, the thermoelectric element 1 can be connected to the power supply circuit 300 by using the existing circuit element in the power supply circuit 300. This can suppress an increase in circuit elements and electronic components 330 required for the power supply circuit 300.
(second embodiment: first modification)
Fig. 12 is a schematic circuit diagram showing an example of a semiconductor integrated circuit device 200 with a power generation function according to a first modification of the second embodiment.
It is also conceivable that a voltage sufficient to operate the semiconductor integrated circuit chip 230 cannot be secured for the electric power generated by the thermoelectric element 1. In such a case, the thermoelectric element 1 may be connected to the power supply circuit 300 via the booster circuit 350. In fig. 12, a schematic circuit representing one example of the booster circuit 350 is illustrated.
As shown in fig. 12, the booster circuit 350 includes, for example, a diode 351, a coil 352, and a third switch 353. The cathode of the diode 351 is electrically coupled with one electrode of the capacitor 336 via the second switch 338. The anode of the diode 351 is electrically coupled to the cathode K of the thermoelectric element 1 via the coil 352. The coil 352 is a choke coil. A connection node N5 between the anode of the diode 351 and the coil 352 is electrically coupled to the low-potential-side wiring 335 via the third switch 353. The third switch 353 uses a transistor, for example.
The operation of the booster circuit 350 boosts the voltage of the auxiliary input power Pina as described below. First, second switch 338 is turned on, and cathode K of thermoelectric element 1 is electrically coupled to one electrode of capacitor 336. In this state, the third switch 353 is turned on. The current flows from the cathode K of the thermoelectric element 1 to the low potential-side wiring 335 via the coil 352. Next, the third switch 353 is turned off. The current from the coil 352 does not immediately go to zero. Therefore, the current flows directly from the coil 352 to the connection node N3 via the diode 351 and the second switch 338. The diode 351 prevents the reverse flow of current from the connection node N3. By repeating the on and off of third switch 353 in this manner, the voltage of auxiliary input power Pina is boosted.
In this way, the thermoelectric element 1 may be connected to the power supply circuit 300 via the booster circuit 350. The booster circuit is not limited to the booster circuit 350 shown in fig. 12. The booster circuit may be a known booster circuit such as a transformer. In addition, a booster circuit can be provided in the power supply circuit 300.
While several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. For example, these embodiments can be implemented in appropriate combinations. The present invention can be implemented in various new forms in addition to the above-described embodiments. Therefore, various omissions, substitutions, and changes can be made in the above embodiments without departing from the spirit of the invention. Such new forms and modifications are included in the scope and gist of the present invention, and are included in the invention described in the claims and the scope of equivalents of the invention described in the claims.
Description of the reference symbols
1. 1 b: thermoelectric element
10: casing body
10 a: first substrate
10 af: first main surface
10 ab: second main surface
10 b: second substrate
10 c: cover body
10 d: storage part
11: a first electrode part
11 a: first electric contact
12: second electrode part
12 a: second electric contact
13 a: first support part
13 aa: substrate bonding surface
13 b: second support part
13 ba: substrate bonding surface
13 c: third support part
13 ca: substrate bonding surface
14: intermediate section
15 a: first connecting wiring
16 a: second connection wiring
17 a: slit
17 b: slit
18 a: first bonding metal
18 b: second bonding metal
30: adhesive member
31: sealing member
71 a: first filling hole
71 b: second filling hole
101: first external housing terminal
102: second outer housing terminal
140: gap part
141: nanoparticles
141 a: insulating film
142: solvent(s)
200: semiconductor integrated circuit device with power generating function
210: package member
220: external terminal
221 a: first bonding wire
221 b: second bonding wire
230: semiconductor integrated circuit chip
260: circuit board
270: electrical wiring
300: power supply circuit
310: commercial power supply
320: circuit board
330: electronic component
331 a: first external terminal
331 b: second external terminal
331 c: third external terminal
331 d: fourth external terminal
331 e: fifth external terminal
331 f: sixth external terminal
332: converter
333: current limiting circuit
334: first switch
335: low potential side wiring
336: capacitor with a capacitor element
337: resistance (RC)
338: second switch
350: voltage booster circuit
351: diode with a high-voltage source
352: coil
353: third switch
G: gap between electrodes
Gel 1: gap
Gel 2: gap
Gx: gap between electrodes
Gy: gap between electrodes
And (3) Pin: external input power
Pina: auxiliary input power
Pout: LSI input power
Z: a first direction
X: second direction
Y: and a third direction.
Claims (5)
1. A semiconductor integrated circuit device with a power generation function, comprising: a semiconductor integrated circuit device; and a thermoelectric element that converts thermal energy emitted from the semiconductor integrated circuit device into electric energy,
the semiconductor integrated circuit device has a package housing a semiconductor integrated circuit chip,
the semiconductor integrated circuit chip has a lower surface facing the circuit board and an upper surface facing the lower surface,
the thermoelectric element has:
a housing portion having a receiving portion;
a first electrode portion provided in the housing portion;
a second electrode portion that is provided in the housing portion, is separated from and opposed to the first electrode portion in a first direction, and has a work function different from that of the first electrode portion; and
an intermediate portion provided between the first electrode portion and the second electrode portion within the housing portion, and containing nanoparticles having a work function between that of the first electrode portion and that of the second electrode portion,
the housing portion is provided on the upper surface side of the semiconductor integrated circuit chip.
2. The semiconductor integrated circuit device with power generation function according to claim 1,
the thermoelectric element further comprises:
a first connection wiring electrically connected to the first electrode portion and leading out the first electrode portion to the outside of the housing portion;
a second connection wiring electrically connected to the second electrode portion and leading out the second electrode portion to the outside of the housing portion; and
the first electrode portion and the first electrical contact of the first connection wiring, and the second electrode portion and the second electrical contact of the second connection wiring are provided in the housing portion, respectively.
3. The semiconductor integrated circuit device with power generation function according to claim 2,
the case portion includes a first substrate having a first main surface and a second main surface opposed to the first main surface and opposed to the upper surface of the semiconductor integrated circuit chip,
the thermoelectric element further has:
a first external terminal electrically connected to the first connection wiring; and
a second external terminal electrically connected to the second connection wiring,
the first external terminal and the second external terminal are respectively provided on the first main surface of the first substrate.
4. The semiconductor integrated circuit device with power generation function according to any one of claims 1 to 3,
the thermoelectric element includes at least 1 of a parallel plate type thermoelectric element and a comb-tooth type thermoelectric element.
5. The semiconductor integrated circuit device with power generation function according to any one of claims 1 to 4,
the thermoelectric element is provided with a power supply circuit which can be supplied with an external input power supplied from the outside and an auxiliary input power supplied from the thermoelectric element, respectively, convert the external input power and the auxiliary input power into a semiconductor integrated circuit device input power, respectively, and output the semiconductor integrated circuit device input power to the semiconductor integrated circuit device.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-044970 | 2019-03-12 | ||
| JP2019044970 | 2019-03-12 | ||
| PCT/JP2020/008578 WO2020184234A1 (en) | 2019-03-12 | 2020-03-02 | Semiconductor integrated circuit device having power generation function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113574689A true CN113574689A (en) | 2021-10-29 |
Family
ID=72427980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080020452.XA Pending CN113574689A (en) | 2019-03-12 | 2020-03-02 | Semiconductor integrated circuit device with power generating function |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220149259A1 (en) |
| EP (1) | EP3940801A4 (en) |
| JP (1) | JPWO2020184234A1 (en) |
| KR (1) | KR20210136076A (en) |
| CN (1) | CN113574689A (en) |
| CA (1) | CA3131377A1 (en) |
| WO (1) | WO2020184234A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10559864B2 (en) | 2014-02-13 | 2020-02-11 | Birmingham Technologies, Inc. | Nanofluid contact potential difference battery |
| EP3863072A4 (en) * | 2018-10-04 | 2022-06-29 | GCE Institute Inc. | Light-emitting device with power-generation function, lighting device, and display device |
| US11124864B2 (en) | 2019-05-20 | 2021-09-21 | Birmingham Technologies, Inc. | Method of fabricating nano-structures with engineered nano-scale electrospray depositions |
| US11649525B2 (en) | 2020-05-01 | 2023-05-16 | Birmingham Technologies, Inc. | Single electron transistor (SET), circuit containing set and energy harvesting device, and fabrication method |
| US11417506B1 (en) | 2020-10-15 | 2022-08-16 | Birmingham Technologies, Inc. | Apparatus including thermal energy harvesting thermionic device integrated with electronics, and related systems and methods |
| US11616186B1 (en) | 2021-06-28 | 2023-03-28 | Birmingham Technologies, Inc. | Thermal-transfer apparatus including thermionic devices, and related methods |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113833A (en) | 1979-02-21 | 1980-09-02 | Kobe Steel Ltd | Treating method for cast material by hot hydrostatic press |
| JPH06147901A (en) | 1992-11-02 | 1994-05-27 | Murata Mfg Co Ltd | Piezoelectric vibration gyro |
| JP3252902B2 (en) * | 1998-12-21 | 2002-02-04 | 日本電気株式会社 | Temperature control unit |
| JP2001308395A (en) * | 2000-04-21 | 2001-11-02 | Matsushita Electric Ind Co Ltd | Heat energy regenerating system for electronic apparatus |
| US7523617B2 (en) * | 2004-10-22 | 2009-04-28 | Nextreme Thermal Solutions, Inc. | Thin film thermoelectric devices for hot-spot thermal management in microprocessors and other electronics |
| JP2007299922A (en) * | 2006-04-28 | 2007-11-15 | Sharp Corp | Semiconductor device |
| JP5397414B2 (en) * | 2011-05-26 | 2014-01-22 | 株式会社デンソー | Thermoelectric generator |
| US10559864B2 (en) * | 2014-02-13 | 2020-02-11 | Birmingham Technologies, Inc. | Nanofluid contact potential difference battery |
| JP6147901B1 (en) * | 2016-07-29 | 2017-06-14 | 株式会社Ｇｃｅインスティチュート | Thermoelectric element and method for manufacturing thermoelectric element |
| WO2020176344A1 (en) * | 2019-02-25 | 2020-09-03 | Birmingham Technologies, Inc. | Nano-scale energy conversion device |
-
2020
- 2020-03-02 JP JP2021504927A patent/JPWO2020184234A1/ja active Pending
- 2020-03-02 US US17/435,810 patent/US20220149259A1/en active Pending
- 2020-03-02 KR KR1020217032068A patent/KR20210136076A/en not_active Application Discontinuation
- 2020-03-02 WO PCT/JP2020/008578 patent/WO2020184234A1/en unknown
- 2020-03-02 CN CN202080020452.XA patent/CN113574689A/en active Pending
- 2020-03-02 CA CA3131377A patent/CA3131377A1/en not_active Abandoned
- 2020-03-02 EP EP20770218.4A patent/EP3940801A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2020184234A1 (en) | 2020-09-17 |
| US20220149259A1 (en) | 2022-05-12 |
| KR20210136076A (en) | 2021-11-16 |
| WO2020184234A1 (en) | 2020-09-17 |
| EP3940801A4 (en) | 2022-12-21 |
| EP3940801A1 (en) | 2022-01-19 |
| CA3131377A1 (en) | 2020-09-17 |
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