CN113571913A - Active small electric transmitting antenna capable of breaking through Bode-Fano limit - Google Patents
Active small electric transmitting antenna capable of breaking through Bode-Fano limit Download PDFInfo
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- CN113571913A CN113571913A CN202110890267.2A CN202110890267A CN113571913A CN 113571913 A CN113571913 A CN 113571913A CN 202110890267 A CN202110890267 A CN 202110890267A CN 113571913 A CN113571913 A CN 113571913A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/002—Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
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Abstract
The invention provides an active small electric transmitting antenna breaking through the Bode-Fano limit, which comprises a first metal floor, and an electric small near-field resonance parasitic antenna unit and a negative feedback amplifying circuit unit which are arranged on the first metal floor and are vertical to each other, wherein the electric small near-field resonance parasitic antenna unit and the negative feedback amplifying circuit unit are vertical to the first metal floor; the electric small near-field resonance parasitic antenna unit for transmitting and radiating signals is connected with the negative feedback amplifying circuit unit; according to the invention, the small electric antenna is skillfully embedded into the feedback circuit of the operational amplifier, so that the effective gain of the small electric antenna can be obviously increased, the passive Bode-Fano limit of the small electric antenna is broken through, and no extra space is consumed.
Description
Technical Field
The invention relates to an active small electric transmitting antenna, in particular to an active small electric transmitting antenna which breaks through the Bode-Fano limit.
Background
Electrically small antennas are small in size relative to their operating wavelength, which makes them very useful in a variety of wireless applications associated with space-limited platforms. However, there are inherent limitations to the performance of an antenna with respect to its electrical size, such as impedance bandwidth and achievable gain, i.e., Bode-Fano limit. This greatly limits the application of electrically small antennas in space constrained platform wireless communication systems that require high gain.
In order to increase the gain of electrically small antennas, researchers have proposed some preferred methods including: yagi structure, lead-in cover structure, near field resonant parasitic element, and huygens antenna. All of these methods can effectively boost the gain of electrically small antennas, but are still limited by the passive Bode-Fano limit.
Active circuits are widely used to improve the effective gain of wireless systems; one common approach is to directly cascade an active amplification circuit with a passive antenna to significantly increase its effective gain. However, the circuits and transmission lines in a cascaded configuration significantly increase the overall size of the system. Thus, the cascading approach is generally not suitable for achieving an overall electrically small design.
Therefore, it is very important to design a high-gain active small transmitting antenna that can be applied to a wireless communication system in a platform with limited space.
Disclosure of Invention
The invention aims to provide an active small electric transmitting antenna which breaks through the Bode-Fano limit.
The invention aims to realize the technical scheme, which comprises a first metal floor, and an electric small near-field resonance parasitic antenna unit and a negative feedback amplifying circuit unit which are arranged on the first metal floor and are vertical to each other, wherein the electric small near-field resonance parasitic antenna unit and the negative feedback amplifying circuit unit are vertical to the first metal floor;
and the electric small near-field resonance parasitic antenna unit for transmitting and radiating signals is connected with the negative feedback amplifying circuit unit.
Further, the electrically small near-field resonant parasitic antenna unit comprises a first dielectric substrate, and an excitation component and a parasitic radiation component which are arranged on the front surface of the first dielectric substrate, wherein the excitation component and the parasitic radiation component are parallel to each other, and the parasitic radiation component is connected with the negative feedback amplification circuit unit.
Further, the negative feedback amplifying circuit unit comprises a second metal floor, a second dielectric substrate, and an operational amplifier chip, a feedback circuit assembly, a matching circuit assembly, a first bias circuit assembly, a second bias circuit assembly, an input terminal patch and an output terminal patch which are arranged on the front surface of the second dielectric substrate, wherein the second metal floor is attached to the back surface of the second dielectric substrate;
the feedback circuit assembly, the matching circuit assembly, the first bias circuit assembly, the second bias circuit assembly, one end of the input end patch and one end of the output end patch are all connected with the operational amplifier chip;
the other ends of the input end patch and the output end patch are connected with the excitation assembly.
Further, the parasitic radiation assembly comprises a first L-shaped patch and a second L-shaped patch which are symmetrically attached to the first dielectric substrate, and vertical edges of the first L-shaped patch and the second L-shaped patch are perpendicular to the first metal floor;
the free ends of the vertical edges of the first L-shaped patch and the second L-shaped patch are connected with the first metal floor, the transverse edges of the first L-shaped patch and the second L-shaped patch are attached to one end, far away from the first metal floor, of the first medium substrate, the free ends of the transverse edges of the first L-shaped patch and the second L-shaped patch are respectively connected with two ends of a first patch capacitor, and the first patch capacitor is attached to the first medium substrate between the transverse edges of the first L-shaped patch and the second L-shaped patch;
the excitation assembly comprises a first patch and a second patch, the first patch and the second patch are attached to the first dielectric substrate, the first patch comprises a first vertical edge, a first transverse edge and a second vertical edge, and the second patch comprises a third vertical edge, a second transverse edge, a fourth vertical edge and a third transverse edge;
the bottom end of the first vertical edge is connected with an inner conductor of an ohm coaxial feed, an outer conductor of the ohm coaxial feed is connected with a first metal floor, the top end of the first vertical edge is connected with one end of the first transverse edge, the other end of the first transverse edge is connected with the bottom end of the second vertical edge, and the top end of the second vertical edge is connected with an input end patch of the negative feedback amplifying circuit unit;
the bottom on the third vertical side is connected with the first metal floor, the top on the third vertical side is connected with one end of the second transverse side, the other end of the second transverse side is connected with the bottom on the fourth vertical side, the top on the fourth vertical side is connected with one end of the third transverse side, and the other end of the third transverse side is connected with the output patch of the negative feedback amplifying circuit unit.
Further, the feedback circuit assembly comprises a feedback resistor and an adjustable divider resistor, wherein the feedback resistor and the adjustable divider resistor are used for adjusting the output gain of the negative feedback amplifying circuit unit, the feedback resistor and the adjustable divider resistor are connected in parallel, one end of the feedback circuit assembly is connected with the operational amplifier chip, and the other end of the feedback circuit assembly is connected with the feedback circuit assembly;
the matching circuit comprises a matching resistor for matching ohmic impedance of a source end and input impedance of the amplifier;
the first bias circuit component and the second bias circuit component are used for driving the operational amplifier chip to work and are respectively composed of a second patch capacitor, a second patch capacitor and a third patch capacitor which are arranged in parallel, one ends of the first bias circuit component and the second bias circuit component are respectively connected with a direct-current power supply VS + and VS-, and the other ends of the first bias circuit component and the second bias circuit component are respectively connected with the operational amplifier chip;
the other end of the input patch is connected with the top end of the second vertical edge, and the other end of the output patch is connected with one end of the third transverse edge.
Further, the feedback loop assembly comprises a third patch, a fourth patch and a metal through hole;
the third patch is attached to the front surface of the first medium substrate, one end of the fourth patch is attached to the back surface of the second medium substrate, an annular groove for avoiding the fourth patch is formed in the second metal floor, one end of the third patch is connected with the first L-shaped patch, and the other end of the third patch is connected with one end of the fourth patch;
and a metal through hole is formed in the second medium substrate, one end of the metal through hole is connected with the fourth patch, and the other end of the metal through hole is connected with the feedback circuit component.
Furthermore, the lengths of the vertical edges of the first L-shaped patch and the second L-shaped patch are respectively 11-15mm, and the widths W2 are respectively 2-3 mm;
the length of the first vertical side is L5, the length of the first transverse side and the length of the second vertical side are L7, and the length of the first patch is L5+ L7 which is 5-7 mm;
the length of the third vertical side is L4, the length of the second transverse side is W4, the length of the fourth vertical side and the length of the third transverse side are L6, and the length of the second patch is L4+ W4+ L6 and is 16-20 mm;
the width W5 of the first patch is the same as that of the second patch, and W5 is 0.1-0.3 mm;
the first patch capacitor is 5-6 pF;
the third patch has a length L9 of 1.5-2mm, and the fourth patch has a length L10 of 2.5-3 mm.
Further, the thickness h2 of the first metal floor is 1 mm;
the length L1 of the first dielectric substrate is 13.8mm, the width W1 is 22.4mm, the width L8 of the second dielectric substrate is 10mm, and the first dielectric substrate and the second dielectric substrate are both made of Rogers DuroidTM5880, the thickness h1 is 0787mm, the relative dielectric constant is 2.2, and the loss tangent is 0.0009;
the lengths of the vertical edges of the first L-shaped patch and the second L-shaped patch are both 11.69mm, the widths W2 are both 2.4mm, the lengths W2 of the transverse edges of the first L-shaped patch and the second L-shaped patch are both 8.4mm, the widths of the transverse edges of the first L-shaped patch and the second L-shaped patch are both 1.91mm, and the distance g1 between the free ends of the transverse edges of the first L-shaped patch and the free ends of the transverse edges of the second L-shaped patch is 0.4 mm;
the length L5 of the first vertical edge is 3mm, the length sum L7 of the first transverse edge and the second vertical edge is 3.46mm, the length L4 of the third vertical edge is 4mm, the length W4 of the second transverse edge is 7.3mm, the length L6 of the fourth vertical edge and the third transverse edge is 6.39mm, and the width W5 of the first patch and the second patch is 0.2 mm;
the third patch has a length L9 of 1.89mm and the fourth patch has a length L10 of 2.78 mm;
direct current power supplies VS + and VS-at one ends of the first bias circuit component and the second bias circuit component are respectively 2.5V-2.5V;
the amplifier is in an OPA855 model, the input impedance of the amplifier is 2.3M omega, the output impedance of the amplifier is 145 omega, the feedback resistance forming the feedback loop is 499 omega, the adjustable divider resistance is 0-2k omega, and the matching resistance in the matching circuit is 50 omega;
the first patch capacitor is 5.6pF, and the second patch capacitor, the third patch capacitor and the fourth patch capacitor in the first bias circuit and the second bias circuit are respectively 0.01 mu F, 0.22 mu F and 2.2 mu F;
the input patch, the output patch, the first patch and the second patch are copper-clad films with the same width and thickness, the first L-shaped patch and the second L-shaped patch are copper-clad films with the same width and thickness, and the third patch and the fourth patch are copper-clad films with the same width and thickness.
Due to the adoption of the technical scheme, the invention has the following advantages:
1. according to the invention, the small electric antenna is skillfully embedded into the feedback circuit of the operational amplifier, so that the effective gain of the small electric antenna can be obviously increased, the passive Bode-Fano limit of the small electric antenna is broken through, and no extra space is consumed.
2. The antenna designed in the invention has an electrically small size, and the ka of the antenna is only 0.15. And the matching is good at the resonance frequency point of 414MHz, and the method can be well applied to a wireless communication system of a space-limited platform.
3. The antenna designed by the invention has a larger gain bandwidth product, and compared with the passive state, the gain bandwidth product is improved by nearly 15 times.
4. The antenna designed by the invention can change the amplification factor of the amplifying circuit by adjusting the adjustable divider resistor in the feedback circuit, thereby changing the radiation gain of the antenna.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof.
Drawings
The drawings of the present invention are described below.
Fig. 1 is a three-dimensional view of the overall structure of the present invention.
FIG. 2 is a front view of a first dielectric substrate according to the present invention.
FIG. 3 is a front view of a second dielectric substrate according to the present invention.
FIG. 4 is a rear view of a second dielectric substrate according to the present invention.
FIG. 5 is a diagram of a passive simulation | S of the present invention11Sum achievable gain (dashed line) and different resistances RgActive test of11L and effective gain (solid line).
FIG. 6 shows an embodiment of the present invention with adjustable resistance R at 414MHzgE-plane and H-plane patterns at 5 Ω.
FIG. 7 shows an embodiment of the present invention with adjustable resistance R at 414MHzgE-plane and H-plane patterns at 200 Ω.
FIG. 8 shows an embodiment of the present invention with adjustable resistance R at 414MHzgE-plane and H-plane patterns at 400 Ω.
FIG. 9 shows an embodiment of the present invention with adjustable resistance R at 414MHzgE-plane and H-plane patterns at 700 Ω.
FIG. 10 shows that the embodiment of the present invention is applicable at 414MHzResistance adjusting RgE-plane and H-plane patterns at 1200 Ω.
FIG. 11 shows an embodiment of the present invention with adjustable resistance R at 414MHzgE-plane and H-plane patterns at 2000 Ω.
In the figure: 1-a first metal floor; 2-an electrically small near-field resonant parasitic antenna element; 3-a negative feedback amplification circuit unit; 4-a first dielectric substrate; 5-an excitation assembly; 6-parasitic radiating element; 7-a second metal floor; 8-a second dielectric substrate; 9-an operational amplifier chip; 10-a feedback circuit assembly; 11-matching circuit components; 12-a first bias circuit component; 13-a second bias circuit component; 14-input patch; 15-pasting the output end; 16-a first L-shaped patch; 17-a second L-shaped patch; 18-a first patch capacitor; 19-a first patch; 20-a second patch; 21-a first vertical edge; 22-a first transverse edge; 23-a second vertical edge; 24-a third vertical edge; 25-a second transverse edge; 26-a fourth vertical edge; 27-a third transverse edge; 28-ohm coaxial feed; 29-feedback resistance; 30-adjustable divider resistance; 31-a feedback loop component; 32-matching resistance; 33-a second patch capacitor; 34-a second patch capacitor; 35-third chip capacitor; 36-a third patch; 37-a fourth patch; 38-metal vias; 39-annular groove.
Detailed Description
The invention is further illustrated by the following figures and examples.
An active small electric transmitting antenna breaking through the Bode-Fano limit as shown in fig. 1-4 is characterized by comprising a first metal floor 1, and an electric small near-field resonant parasitic antenna unit 2 and a negative feedback amplifying circuit unit 3 which are arranged on the first metal floor 1 and are perpendicular to each other, wherein the electric small near-field resonant parasitic antenna unit 2 and the negative feedback amplifying circuit unit 3 are both perpendicular to the first metal floor 1;
an electrically small near-field resonant parasitic antenna element 2 for transmitting and radiating signals is connected to the negative feedback amplification circuit unit 3.
As an embodiment of the present invention, the electrically small near-field resonant parasitic antenna unit 2 includes a first dielectric substrate 4, and an excitation element 5 and a parasitic radiation element 6 disposed on a front surface of the first dielectric substrate 4, where the excitation element 5 and the parasitic radiation element 6 are parallel to each other, and the parasitic radiation element 6 is connected to the negative feedback amplification circuit unit 3.
As an embodiment of the present invention, the negative feedback amplification circuit unit 3 includes a second metal floor 7, a second dielectric substrate 8, and an operational amplifier chip 9, a feedback circuit component 10, a matching circuit component 11, a first bias circuit component 12, a second bias circuit component 13, an input terminal patch 14, and an output terminal patch 15 disposed on the front surface of the second dielectric substrate 8, where the second metal floor 7 is attached to the back surface of the second dielectric substrate 8;
one end of the feedback circuit assembly 10, one end of the matching circuit assembly 11, one end of the first bias circuit assembly 12, one end of the second bias circuit assembly 13, one end of the input end patch 14 and one end of the output end patch 15 are all connected with the operational amplifier chip 9;
the other ends of the input end patch 14 and the output end patch 15 are connected with the excitation assembly 5.
As an embodiment of the present invention, the parasitic radiation component 6 includes a first L-shaped patch 16 and a second L-shaped patch 17 symmetrically attached to the first dielectric substrate 4, and vertical edges of the first L-shaped patch 16 and the second L-shaped patch 17 are both perpendicular to the first metal floor 1;
the free ends of the vertical edges of the first L-shaped patch 16 and the second L-shaped patch 17 are connected with the first metal floor 1, the transverse edges of the first L-shaped patch 16 and the second L-shaped patch 17 are attached to one end, far away from the first metal floor 1, of the first medium substrate 4, the free ends of the transverse edges of the first L-shaped patch 16 and the second L-shaped patch 17 are connected with two ends of a first patch capacitor 18 respectively, and the first patch capacitor 18 is attached to the first medium substrate 4 between the transverse edges of the first L-shaped patch 16 and the second L-shaped patch 17;
the excitation assembly 5 comprises a first patch 19 and a second patch 20 which are attached to the first dielectric substrate 4, the first patch 19 comprises a first vertical edge 21, a first transverse edge 22 and a second vertical edge 23, and the second patch 20 comprises a third vertical edge 24, a second transverse edge 25, a fourth vertical edge 26 and a third transverse edge 27;
the bottom end of the first vertical edge 21 is connected with the inner conductor of the ohm coaxial feed 28, the outer conductor of the ohm coaxial feed 28 is connected with the first metal floor 1, the top end of the first vertical edge 21 is connected with one end of the first transverse edge 22, the other end of the first transverse edge 22 is connected with the bottom end of the second vertical edge 23, and the top end of the second vertical edge 23 is connected with the input end patch 14 of the negative feedback amplifying circuit unit 3;
the bottom of the third vertical side 24 is connected with the first metal floor 1, the top of the third vertical side 24 is connected with one end of the second transverse side 25, the other end of the second transverse side 25 is connected with the bottom of the fourth vertical side 26, the top of the fourth vertical side 26 is connected with one end of the third transverse side 27, and the other end of the third transverse side 27 is connected with the output patch 15 of the negative feedback amplifying circuit unit 3.
As an embodiment of the present invention, the feedback circuit assembly 10 includes a feedback resistor 29 and an adjustable voltage dividing resistor 30 for adjusting the output gain of the negative feedback amplifying circuit unit 3, the feedback resistor 29 is connected in parallel with the adjustable voltage dividing resistor 30, one end of the feedback circuit assembly 10 is connected to the operational amplifier chip 9, and the other end of the feedback circuit assembly 10 is connected to a feedback circuit assembly 31;
the matching circuit 15 comprises a matching resistor 32 for matching the source-end ohmic impedance and the amplifier input impedance;
the first bias circuit component 12 and the second bias circuit component 13 for driving the operational amplifier chip 9 to work are respectively composed of three second chip capacitors 33, second chip capacitors 34 and third chip capacitors 35 which are arranged in parallel, one ends of the first bias circuit component 12 and the second bias circuit component 13 are respectively connected with a direct current power supply VS +, VS-, and the other ends of the first bias circuit component 12 and the second bias circuit component 13 are both connected with the operational amplifier chip 9;
the other end of the input patch 14 is connected with the top end of the second vertical edge 23, and the other end of the output patch 15 is connected with one end of the third transverse edge 27.
As an embodiment of the present invention, the feedback loop assembly 31 includes a third patch 36, a fourth patch 37, a metal via 38;
the third patch 36 is attached to the front surface of the first dielectric substrate 4, one end of the fourth patch 37 is attached to the back surface of the second dielectric substrate 8, an annular groove 39 for avoiding the fourth patch 37 is formed in the second metal floor 7, one end of the third patch 36 is connected with the first L-shaped patch 16, and the other end of the third patch 36 is connected with one end of the fourth patch 37;
a metal through hole 38 is formed in the second dielectric substrate 8, one end of the metal through hole 38 is connected to the fourth patch 37, and the other end of the metal through hole 38 is connected to the feedback circuit assembly 10.
As an embodiment of the present invention, the thickness h2 of the first metal floor 1 is set to 1 mm;
the length L1 of the first dielectric substrate 4 is 13.8mm, the width W1 is 22.4mm, the width L8 of the second dielectric substrate 8 is 10mm, and the first dielectric substrate 4 and the second dielectric substrate 8 are both made of Rogers DuroidTM5880, the thickness h1 is 0787mm, the relative dielectric constant is 2.2, and the loss tangent is 0.0009;
the lengths of the vertical edges of the first L-shaped patch 16 and the second L-shaped patch 17 are both L3 and 11.69mm, the widths W2 are both 2.4mm, the lengths W2 of the transverse edges of the first L-shaped patch 16 and the second L-shaped patch 17 are both 8.4mm, the widths L2 are both 1.91mm, and the distance g1 between the free end of the transverse edge of the first L-shaped patch 16 and the free end of the transverse edge of the second L-shaped patch 17 is 0.4 mm;
the length L5 of the first vertical side 21 is 3mm, the length sum L7 of the first transverse side 22 and the second vertical side 23 is 3.46mm, the length L4 of the third vertical side 24 is 4mm, the length W4 of the second transverse side 25 is 7.3mm, the length L6 of the fourth vertical side 26 and the third transverse side 27 is 6.39mm, and the widths W5 of the first patch 19 and the second patch 20 are both 0.2 mm;
the third patch 36 has a length L9 of 1.89mm, and the fourth patch 37 has a length L10 of 2.78 mm;
the direct current power sources VS + and VS-at one ends of the first bias circuit component 12 and the second bias circuit component 13 are respectively 2.5V-2.5V;
the amplifier 20 is an OPA855, the input impedance of which is 2.3M Ω, the output impedance of which is 145 Ω, the feedback resistor 29 constituting the feedback loop 21 is 499 Ω, the adjustable divider resistor 30 is 0-2k Ω, and the matching resistor in the matching circuit 22 is 50 Ω;
the first patch capacitor 18 is 5.6pF, and the second patch capacitor 33, the third patch capacitor 32 and the fourth patch capacitor 33 in the first bias circuit 23 and the second bias circuit 24 are respectively 0.01 μ F, 0.22 μ F and 2.2 μ F;
the input-end patch 14, the output-end patch 15, the first patch 19 and the second patch 20 are copper-clad films with the same width and thickness, the first L-shaped patch 16 and the second L-shaped patch 17 are copper-clad films with the same width and thickness, and the third patch 36 and the fourth patch 37 are copper-clad films with the same width and thickness.
According to the parameters, an Agilent N5225A network analyzer and a microwave darkroom are used for designing the reflection coefficient (| S) of the small active electric transmitting antenna which breaks through the Bode-Fano limit11I), effective gain and radiation pattern characteristic parameters are respectively tested and analyzed, and the analysis results are as follows:
FIG. 5 shows a passive simulation | S of an active electrically small transmitting antenna breaking through the Bode-Fano limit11Sum achievable gain (dashed line) and different resistances RgActive test of11I and effective gain (solid line), the i S of the active electrically small antenna is known in both cases compared to the simulation results for the corresponding electrically small antenna11The | curve (solid grey line) is less than-10 dB across the frequency range. This advantageous impedance matching results from the presence of a 50 Ω matching resistance at the positive input of the amplifier circuit, both curves being notably minimum around the operating frequency of the passive electrically small antenna, i.e. around 413.4 MHz.
Further, we can find that by adjusting the resistance of the adjustable resistor Rg from 5 Ω to 2000 Ω, the effective gain of the active antenna is 7.232 and 1.222dBi respectively, and can be dynamically tuned in the range of Δ 1 ═ 6.01 dB. The maximum gain improvement is 9.125dBi compared to a passive electrically small antenna. We also note that the 3-dB gain bandwidth of the tested effective gain curve is extended. This is because the amplification circuit compensates for smaller gain values near the resonant frequency of the passive electrically small antenna, thereby extending the bandwidth.
Further, the peak effective gain of the active small transmitting antenna breaking through the Bode-Fano limit is 7.232 dBi-5.287, and the peak value appears at Rg-5 Ω; corresponding FBW3dB0.00966; this means that the active antenna gain bandwidth product GBWPmax is 5.287 × 0.0097 is 0.0513; thus, GBWPActive source/GBWPPassive15.2, i.e.: the gain-bandwidth product of the measured active electrically small antenna is increased by 15.2 times over the upper limit of the corresponding passive electrically small antenna.
As shown in fig. 6-11, Rg is 5 Ω, 200 Ω, 400 Ω, 700 Ω, 1200 Ω, 2000 Ω, the effective gain plots of main polarization and cross polarization of the tested active electrically small antenna in E-plane (yoz) and H-plane (xoz) at the center frequency of 414MHz of its operating band; the effective gain peak in all cases is in the vertical direction, i.e., the 0 ° direction; the cross polarization tested was 15dB lower than the main polarization, indicating that the active electrically small antenna had a higher polarization purity. Furthermore, the effective gain pattern is uniform and stable in all cases; it can be further demonstrated that negative feedback amplification circuits have a large effect on their peaks, but a small effect on their shape.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (8)
1. An active small electric transmitting antenna breaking through the Bode-Fano limit is characterized by comprising a first metal floor (1), and an electric small near-field resonance parasitic antenna unit (2) and a negative feedback amplifying circuit unit (3) which are arranged on the first metal floor (1) and are perpendicular to each other, wherein the electric small near-field resonance parasitic antenna unit (2) and the negative feedback amplifying circuit unit (3) are perpendicular to the first metal floor (1);
an electrically small near-field resonant parasitic antenna element (2) for transmitting and radiating signals is connected with the negative feedback amplification circuit element (3).
2. An active electrically small transmitting antenna breaking through the Bode-Fano limit as claimed in claim 1, characterized in that said electrically small near-field resonant parasitic antenna element (2) comprises a first dielectric substrate (4), and an exciting element (5), a parasitic radiating element (6) arranged on the front side of said first dielectric substrate (4), said exciting element (5) and said parasitic radiating element (6) being parallel to each other, said parasitic radiating element (6) being connected to said negative feedback amplifying circuit unit (3).
3. The active small electric transmitting antenna breaking through the Bode-Fano limit as claimed in claim 2, wherein the negative feedback amplifying circuit unit (3) comprises a second metal floor (7), a second dielectric substrate (8), and an operational amplifier chip (9), a feedback circuit assembly (10), a matching circuit assembly (11), a first bias circuit assembly (12), a second bias circuit assembly (13), an input terminal patch (14), an output terminal patch (15) disposed on the front surface of the second dielectric substrate (8), the second metal floor (7) is attached to the back surface of the second dielectric substrate (8);
the feedback circuit assembly (10), the matching circuit assembly (11), the first bias circuit assembly (12), the second bias circuit assembly (13), one end of the input end patch (14) and one end of the output end patch (15) are all connected with the operational amplifier chip (9);
the other ends of the input end patch (14) and the output end patch (15) are connected with the excitation assembly (5).
4. An active electrically small transmitting antenna breaking through the Bode-Fano limit as claimed in claim 3, characterized in that the parasitic radiating element (6) comprises a first L-shaped patch (16) and a second L-shaped patch (17) symmetrically attached to the first dielectric substrate (4), the vertical edges of the first L-shaped patch (16) and the second L-shaped patch (17) are both perpendicular to the first metal floor (1);
the free ends of the vertical edges of the first L-shaped patch (16) and the second L-shaped patch (17) are connected with the first metal floor (1), the transverse edges of the first L-shaped patch (16) and the second L-shaped patch (17) are respectively attached to one end, far away from the first metal floor (1), of the first medium substrate (4), the free ends of the transverse edges of the first L-shaped patch (16) and the second L-shaped patch (17) are respectively connected with two ends of a first patch capacitor (18), and the first patch capacitor (18) is attached to the first medium substrate (4) between the transverse edges of the first L-shaped patch (16) and the second L-shaped patch (17);
the excitation assembly (5) comprises a first patch (19) and a second patch (20) which are attached to the first dielectric substrate (4), the first patch (19) comprises a first vertical edge (21), a first transverse edge (22) and a second vertical edge (23), and the second patch (20) comprises a third vertical edge (24), a second transverse edge (25), a fourth vertical edge (26) and a third transverse edge (27);
the bottom end of the first vertical side (21) is connected with an inner conductor of an ohm coaxial feed (28), an outer conductor of the ohm coaxial feed (28) is connected with the first metal floor (1), the top end of the first vertical side (21) is connected with one end of the first transverse side (22), the other end of the first transverse side (22) is connected with the bottom end of the second vertical side (23), and the top end of the second vertical side (23) is connected with an input end patch (14) of the negative feedback amplifying circuit unit (3);
the bottom on third perpendicular limit (24) with first metal floor (1) is connected, the top on third perpendicular limit (24) with the one end on the horizontal limit of second (25) is connected, the other end on the horizontal limit of second (25) with the bottom on fourth perpendicular limit (26) is connected, the top on fourth perpendicular limit (26) with the one end on the horizontal limit of third (27) is connected, the other end on the horizontal limit of third (27) with output paster (15) of negative feedback amplifier circuit unit (3) are connected.
5. The active small transmitting antenna breaking through the Bode-Fano limit as claimed in claim 4, wherein the feedback circuit assembly (10) comprises a feedback resistor (29) and an adjustable voltage dividing resistor (30) for adjusting the output gain of the negative feedback amplifying circuit unit (3), the feedback resistor (29) is connected with the adjustable voltage dividing resistor (30) in parallel, one end of the feedback circuit assembly (10) is connected with the operational amplifier chip (9), and the other end of the feedback circuit assembly (10) is connected with a feedback circuit assembly (31);
the matching circuit (15) comprises a matching resistor (32) for matching source end ohmic impedance and amplifier input impedance;
the first bias circuit component (12) and the second bias circuit component (13) are used for driving the operational amplifier chip (9) to work and are respectively composed of a second patch capacitor (33), a second patch capacitor (34) and a third patch capacitor (35) which are arranged in parallel, one ends of the first bias circuit component (12) and the second bias circuit component (13) are respectively connected with a direct-current power supply VS +, VS-, and the other ends of the first bias circuit component (12) and the second bias circuit component (13) are respectively connected with the operational amplifier chip (9);
the other end of the input end patch (14) is connected with the top end of the second vertical edge (23), and the other end of the output end patch (15) is connected with one end of the third transverse edge (27).
6. An active electrically small transmitting antenna breaching the Bode-Fano limit as claimed in claim 5 wherein said feedback loop assembly (31) comprises a third patch (36), a fourth patch (37), a metal via (38);
the third patch (36) is attached to the front surface of the first dielectric substrate (4), one end of the fourth patch (37) is attached to the back surface of the second dielectric substrate (8), an annular groove (39) used for avoiding the fourth patch (37) is formed in the second metal floor (7), one end of the third patch (36) is connected with the first L-shaped patch (16), and the other end of the third patch (36) is connected with one end of the fourth patch (37);
and a metal through hole (38) is formed in the second dielectric substrate (8), one end of the metal through hole (38) is connected with the fourth patch (37), and the other end of the metal through hole (38) is connected with the feedback circuit assembly (10).
7. An active electrically small transmitting antenna breaching the Bode-Fano limit as claimed in claim 6 wherein said first L-shaped patch (16) and said second L-shaped patch (17) are each 11-15mm in length at L1 and 2-3mm in width at W2;
the length of the first vertical side (21) is L5, the length of the first transverse side (22) and the length of the second vertical side (23) are L7, and the length L5+ L7 of the first patch (19) is 5-7 mm;
the length of the third vertical side (24) is L4, the length of the second transverse side (25) is W4, the length of the fourth vertical side (26) and the third transverse side (27) is L6, and the length of the second patch (20) is L4+ W4+ L6 and is 16-20 mm;
the width W5 of the first patch (19) and the second patch (20) is the same, and W5 is 0.1-0.3 mm;
the first patch capacitor (18) is 5-6 pF;
the third patch (36) has a length L9 of 1.5-2mm and the fourth patch (37) has a length L10 of 2.5-3 mm.
8. An active electrically small transmitting antenna breaking the Bode-Fano limit as claimed in claim 7, characterized in that the thickness h2 of the first metal floor (1) is 1 mm;
the length L1 of the first dielectric substrate (4) is 13.8mm, the width W1 is 22.4mm, the width L8 of the second dielectric substrate (8) is 10mm, and the first dielectric substrate (4) and the second dielectric substrate (8) are both made of Rogers DuroidTM5880, the thickness h1 is 0787mm, the relative dielectric constant is 2.2, and the loss tangent is 0.0009;
the lengths of the vertical edges of the first L-shaped patch (16) and the second L-shaped patch (17) are both 11.69mm, the widths W2 are both 2.4mm, the lengths W2 of the transverse edges of the first L-shaped patch (16) and the second L-shaped patch (17) are both 8.4mm, the widths of the first L-shaped patch and the second L-shaped patch are both 1.91mm, and the distance g1 between the free end of the transverse edge of the first L-shaped patch (16) and the free end of the transverse edge of the second L-shaped patch (17) is 0.4 mm;
the length L5 of the first vertical side (21) is 3mm, the length sum L7 of the first transverse side (22) and the second vertical side (23) is 3.46mm, the length L4 of the third vertical side (24) is 4mm, the length W4 of the second transverse side (25) is 7.3mm, the length L6 of the fourth vertical side (26) and the third transverse side (27) is 6.39mm, and the widths W5 of the first patch (19) and the second patch (20) are both 0.2 mm;
the third patch (36) has a length L9 of 1.89mm and the fourth patch (37) has a length L10 of 2.78 mm;
direct current power supplies VS + and VS-at one ends of the first bias circuit component (12) and the second bias circuit component (13) are respectively 2.5V-2.5V;
the amplifier (20) is in an OPA855 model, the input impedance is 2.3M omega, the output impedance is 145 omega, the feedback resistor (29) forming the feedback loop (21) is 499 omega, the adjustable divider resistor (30) is 0-2k omega, and the matching resistor in the matching circuit (22) is 50 omega;
the first patch capacitor (18) is 5.6pF, and the second patch capacitor (33), the third patch capacitor (32) and the fourth patch capacitor (33) in the first bias circuit (23) and the second bias circuit (24) are respectively 0.01 mu F, 0.22 mu F and 2.2 mu F;
the input-end patch (14), the output-end patch (15), the first patch (19) and the second patch (20) are copper-clad films with the same width and thickness, the first L-shaped patch (16) and the second L-shaped patch (17) are copper-clad films with the same width and thickness, and the third patch (36) and the fourth patch (37) are copper-clad films with the same width and thickness.
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