CN113571405A - Method for cleaning wafer after cutting - Google Patents
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- CN113571405A CN113571405A CN202110707979.6A CN202110707979A CN113571405A CN 113571405 A CN113571405 A CN 113571405A CN 202110707979 A CN202110707979 A CN 202110707979A CN 113571405 A CN113571405 A CN 113571405A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005520 cutting process Methods 0.000 title claims abstract description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002253 acid Substances 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000853 adhesive Substances 0.000 claims abstract description 31
- 230000001070 adhesive effect Effects 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010439 graphite Substances 0.000 claims abstract description 27
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000011259 mixed solution Substances 0.000 claims abstract description 20
- 229960000583 acetic acid Drugs 0.000 claims abstract description 19
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 19
- 238000005406 washing Methods 0.000 claims abstract description 18
- 239000003350 kerosene Substances 0.000 claims description 49
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000243 solution Substances 0.000 claims description 23
- 230000004913 activation Effects 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 16
- 239000004570 mortar (masonry) Substances 0.000 claims description 16
- 230000003213 activating effect Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- 241001122767 Theaceae Species 0.000 claims description 10
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 10
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 10
- 239000001397 quillaja saponaria molina bark Substances 0.000 claims description 10
- 229930182490 saponin Natural products 0.000 claims description 10
- 150000007949 saponins Chemical class 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 10
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical group [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 8
- 125000005227 alkyl sulfonate group Chemical group 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 122
- 230000000052 comparative effect Effects 0.000 description 18
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- 239000013078 crystal Substances 0.000 description 7
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- -1 on one hand Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000028571 Occupational disease Diseases 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for cleaning a wafer after cutting, and relates to the technical field of semiconductor materials. The invention discloses a method for cleaning a cut wafer, which comprises an acid washing degumming step, wherein the acid washing degumming step is to soak the wafer which is cleaned in advance in an acid mixed solution, and after heating, the adhesive and graphite on the surface of the wafer are removed by ultrasonic wave assistance, the acid mixed solution is a mixed solution of glacial acetic acid and water, and the volume ratio of the glacial acetic acid to the water is 1 (8-10). The invention discloses a method for cleaning a wafer after cutting, which can effectively remove adhesive and graphite on the surface of the wafer and avoid the problems of damage and secondary pollution to the wafer caused by manual operation.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a method for cleaning a wafer after cutting.
Background
In the production process of the gallium arsenide wafer, the crystal is cut into pieces by utilizing a linear cutting technology, after the angle processing is carried out on the crystal, the crystal is bonded on a graphite strip by using an epoxy resin adhesive and a curing agent and then bonded with a precision iron plate, and after the bonding and solidification, the crystal is placed into a multi-wire cutting machine for cutting. The multi-line cutting technique usually adopts a mortar cutting method, namely, mortar is sprayed on the surface of a cutting steel wire to form a mortar film, and the steel wire drives the mortar to grind and cut crystals so as to form the crystals into pieces.
After cutting, a large amount of cutting mortar is attached to the wafer, the mortar and impurities on the wafer need to be removed after cutting is finished to keep the surface of the wafer clean, and meanwhile, the adhesive and graphite adhered to the crystal need to be removed. In the current cleaning process, the removal of mortar and impurities on the wafer surface is mostly aimed at, the removal of graphite and adhesive adhered to the wafer surface is less concerned, in the prior art, the removal of graphite and adhesive is mostly treated in a hot water soaking mode and then in a manual operation mode, but because the adhesive has stronger curing capacity, the strength of the adhered and cured graphite is higher, the wafer is easy to crack and damage by adopting the hot water soaking and manual removal mode, secondary pollution is generated on the wafer surface, and the stability of the wafer quality is not beneficial to improvement, so that the cleaning method capable of effectively removing the adhesive and the graphite on the wafer is urgently needed.
Disclosure of Invention
In view of the above problems, an object of the present invention is to disclose a method for cleaning a wafer after dicing, which can effectively remove an adhesive and graphite on the surface of the wafer, and avoid the problems of damage and secondary pollution to the wafer caused by manual operation.
The cleaning method comprises an acid washing degumming step, wherein the acid washing degumming step is to soak the wafer which is cleaned in advance into an acid mixed solution, and after heating, the adhesive and graphite on the surface of the wafer are removed by ultrasonic assistance.
Further, the acidic mixed solution is a mixed solution of glacial acetic acid and water, and the volume ratio of the glacial acetic acid to the water is 1 (8-10).
The inventor finds out that the optimal volume ratio of the glacial acetic acid to the water is obtained, and tests with a large number of different ratios prove that the degumming capacity is reduced when the ratio of the glacial acetic acid to the water is higher or lower, and the production cost is increased when the ratio of the glacial acetic acid is increased.
Further, the heating temperature is 60-70 ℃, and the ultrasonic frequency is 20-30 kHz.
Further, the pre-cleaning comprises kerosene cleaning and activation cleaning, and the kerosene cleaning comprises two kerosene cleaning steps.
Further, the cleaning method specifically comprises the following steps:
cleaning kerosene: immersing a wafer to be washed in kerosene, shaking the wafer up and down, fishing out the wafer after the washing is finished, immersing the wafer in clean kerosene, and shaking the wafer up and down until mortar on the surface of the wafer is washed;
activating and cleaning: respectively weighing tea saponin, fatty alcohol-polyoxyethylene ether, sodium secondary alkyl sulfonate and sodium bicarbonate, adding water to prepare an activation solution, immersing the wafer cleaned by kerosene in the activation solution, and simultaneously carrying out ultrasonic vibration cleaning;
acid pickling and degumming: immersing the activated and cleaned wafer in an acid mixed solution, heating, and removing the adhesive and graphite on the surface of the wafer by ultrasonic assistance;
alcohol washing: washing the degummed wafer with deionized water, immersing the wafer into ethanol, and shaking the wafer up and down;
drying: and heating and drying the wafer washed by the alcohol by hot nitrogen.
Further, the activating solution comprises the following raw materials in percentage by mass: 5-15% of tea saponin, 20-30% of fatty alcohol-polyoxyethylene ether, 30-40% of secondary alkyl sodium sulfonate and 20-30% of sodium bicarbonate.
Further, in the step of activating and cleaning, the ultrasonic frequency is 20-30KHz, and the cleaning time is 15-20 min.
Further, in the drying step, the temperature of hot nitrogen is 80-90 ℃, and the drying time is 5-10 min.
The invention has the beneficial effects that:
1. the invention discloses a method for cleaning a wafer after cutting, which comprises the steps of carrying out acidizing corrosion on an adhesive by using an acidic mixed solution according to the characteristics of the adhesive used by the wafer, softening the adhesive to a certain extent by heating under the conditions of heating and ultrasound, combining the vibration and cavitation effect of ultrasound, combining the three for use, and removing the adhesive and graphite adhered on the wafer under the condition of not using external force, thereby avoiding damage and secondary pollution to the wafer.
2. According to the invention, glacial acetic acid is prepared to obtain an acidic solution, on one hand, glacial acetic acid as a unitary weak acid is only partially ionized in an aqueous solution, and after hydrogen ions generated by ionization corrode and lose the adhesive, the glacial acetic acid can be continuously ionized to supplement and maintain the concentration of the hydrogen ions, so that the reutilization rate of the acidic solution is increased; on the other hand, glacial acetic acid as weak acid can not cause corrosion damage to the surface of the wafer, can effectively remove the residual weakly alkaline activating solution on the surface of the wafer, has small harm to a human body under the condition of long-term use, and is beneficial to reducing the occurrence probability of occupational diseases.
3. The invention cleans the mortar by using the principle that kerosene is similar to and compatible with each other, activates the kerosene remained on the surface of a wafer by using an activating solution, and then plays a role in fully removing the kerosene through ultrasonic vibration, thereby preparing for the subsequent acidification degumming step.
Drawings
FIG. 1 is a diagram of a wafer after cleaning according to an embodiment;
FIG. 2 is a photograph of a cleaned wafer of comparative example one (comparative example is similar thereto and is not shown);
FIG. 3 is a photograph of a wafer cleaned according to comparative example III;
fig. 4 is a photograph of a wafer cleaned in accordance with comparative example four.
Detailed Description
The present invention will be described in detail with reference to specific examples below:
the invention discloses a method for cleaning a wafer after cutting, which comprises the steps of corroding adhesive and graphite on the surface of the wafer by using acid mixed liquor in the process of cleaning the wafer, and then achieving the effect of removing the adhesive and the graphite by combining heating and ultrasonic waves, thereby avoiding the problems of damage and secondary pollution to the wafer caused by manual operation, and specifically comprises the following steps:
example one
Cleaning kerosene: and placing the wafer to be washed after cutting into a clamping plug, placing the wafer and the clamping plug on a tray at the bottom of a kerosene tank, immersing the wafer and the clamping plug in the kerosene, continuously lifting the tray to enable the clamping plug to reciprocate above and below the liquid level of the kerosene, and continuously and slowly shaking the tray, so that the wafer and the clamping plug are shaken up and down for 3-5min, wherein 4min is adopted in the embodiment to remove most of mortar remained on the surface of the wafer, after the cleaning is finished, the wafer and the clamping plug are placed in another kerosene tank, placed on the tray at the bottom of the kerosene tank, immersed in clean kerosene, and the operation of shaking the wafer up and down is repeated for 1-2min, 2min is adopted in the embodiment, and the mortar on the surface of the wafer is cleaned and fished out.
Activating and cleaning: the method comprises the steps of weighing tea saponin, fatty alcohol-polyoxyethylene ether, sodium secondary alkyl sulfonate and sodium bicarbonate, adding water to prepare an activation solution containing 15% of tea saponin, 25% of fatty alcohol-polyoxyethylene ether, 30% of sodium secondary alkyl sulfonate and 25% of sodium bicarbonate, immersing a wafer cleaned by kerosene in the activation solution, simultaneously carrying out ultrasonic vibration, cleaning for 18min under the condition that the ultrasonic frequency is 30KHz, activating the kerosene remained on the surface of the wafer due to kerosene cleaning by the activation solution, and enabling kerosene molecules to fall off the surface of the wafer to enter the activation solution by matching ultrasonic vibration.
Acid pickling and degumming: glacial acetic acid and water are respectively weighed according to the volume ratio of 1:10 and are stirred and uniformly mixed to obtain an acid mixed solution, the wafer after activation and cleaning is immersed in the acid mixed solution, the temperature is raised to 70 ℃, ultrasonic wave with the frequency of 30kHz is used for assisting in immersion for 35min, the adhesive and graphite on the surface of the wafer are removed, the acid solution can not only remove the residual alkalescent active agent on the surface of the wafer, but also can effectively enable the adhesive and graphite on the wafer to fall off under the combined action of heating and ultrasonic.
Alcohol washing: placing the degummed wafer on a tray at the bottom of a pure water tank, opening a deionized water valve, washing the residual acid mixed liquid on the surface of the wafer with deionized water, placing the wafer on the tray at the bottom of an ethanol cleaning tank, immersing the wafer into ethanol, continuously lifting the tray to enable a clamping plug to reciprocate above and below the ethanol liquid level and continuously and slowly shaking the tray, so that the wafer is shaken up and down for 20-30s, wherein 25s is selected in the embodiment.
Drying: and (3) putting the wafer washed with the alcohol into a drying groove, closing a groove cover, and heating and drying for 5min by hot nitrogen at the temperature of 90 ℃ until the ethanol on the surface of the wafer is completely volatilized.
Example two
Cleaning kerosene: the wafer to be washed after being cut is placed in the clamping plug and placed on the tray at the bottom of the kerosene tank, the wafer and the clamping plug are immersed in kerosene, the tray is lifted continuously to enable the clamping plug to reciprocate above and below the liquid level of the kerosene, the tray is shaken slowly and continuously, the wafer is shaken up and down for 3min so as to remove most of mortar remained on the surface of the wafer, the wafer is fished out after being cleaned and placed in another kerosene tank, the wafer and the clamping plug are placed on the tray at the bottom of the kerosene tank, the operation of shaking the wafer up and down is repeated, the operation lasts for 1min, and the mortar on the surface of the wafer is cleaned and fished out.
Activating and cleaning: respectively weighing tea saponin, fatty alcohol-polyoxyethylene ether, sodium secondary alkyl sulfonate and sodium bicarbonate, adding water to prepare an activation solution containing 10% of tea saponin, 20% of fatty alcohol-polyoxyethylene ether, 40% of sodium secondary alkyl sulfonate and 20% of sodium bicarbonate, immersing a wafer cleaned by kerosene in the activation solution, simultaneously carrying out ultrasonic vibration, cleaning for 15min under the condition that the ultrasonic frequency is 25KHz, activating the kerosene remained on the surface of the wafer due to kerosene cleaning by using the activation solution, and matching with ultrasonic vibration to enable kerosene molecules to fall off the surface of the wafer to enter the activation solution.
Acid pickling and degumming: glacial acetic acid and water are respectively weighed according to the volume ratio of 1:8 and are stirred and uniformly mixed to obtain an acid mixed solution, the wafer after activation and cleaning is immersed in the acid mixed solution, the temperature is increased to 65 ℃, ultrasonic wave with the frequency of 25kHz is used for assisting in immersion for 40min, the adhesive and graphite on the surface of the wafer are removed, the acid solution can not only remove the residual alkalescent active agent on the surface of the wafer, but also can effectively enable the adhesive and graphite on the wafer to fall off under the combined action of heating and ultrasonic.
Alcohol washing: and (3) putting the degummed wafer on a tray at the bottom of a pure water tank, opening a deionized water valve, washing the residual acid mixed liquid on the surface of the wafer by using deionized water, putting the wafer on the tray at the bottom of an ethanol cleaning tank, immersing the wafer into ethanol, continuously lifting the tray to enable the clamping plug to reciprocate above and below the ethanol liquid level and continuously and slowly shake the tray, so that the wafer is shaken up and down for 20 s.
Drying: and (3) putting the wafer washed with the alcohol into a drying groove, closing a groove cover, and heating and drying for 8min by hot nitrogen at the temperature of 85 ℃ until the ethanol on the surface of the wafer is completely volatilized.
EXAMPLE III
Cleaning kerosene: the wafer to be washed after being cut is placed in the clamping plug and placed on the tray at the bottom of the kerosene tank, the wafer and the clamping plug are immersed in kerosene, the tray is lifted continuously to enable the clamping plug to reciprocate above and below the liquid level of the kerosene, the tray is shaken slowly and continuously, the wafer is shaken up and down for 5min so as to remove most of mortar remained on the surface of the wafer, the wafer is fished out after being cleaned and placed in another kerosene tank, the wafer and the clamping plug are placed on the tray at the bottom of the kerosene tank, the wafer and the clamping plug are immersed in clean kerosene, the wafer is shaken up and down repeatedly, the operation of shaking the wafer up and down lasts for 2min, and the mortar on the surface of the wafer is cleaned and fished out.
Activating and cleaning: respectively weighing tea saponin, fatty alcohol-polyoxyethylene ether, sodium secondary alkyl sulfonate and sodium bicarbonate, adding water to prepare an activation solution containing 5% of tea saponin, 30% of fatty alcohol-polyoxyethylene ether, 35% of sodium secondary alkyl sulfonate and 30% of sodium bicarbonate, immersing a wafer cleaned by kerosene in the activation solution, simultaneously carrying out ultrasonic vibration, cleaning for 20min under the condition that the ultrasonic frequency is 20KHz, activating the kerosene remained on the surface of the wafer due to kerosene cleaning by using the activation solution, and matching with ultrasonic vibration to enable kerosene molecules to fall off the surface of the wafer to enter the activation solution.
Acid pickling and degumming: respectively weighing glacial acetic acid and water according to the volume ratio of 1:9, stirring and uniformly mixing to obtain an acid mixed solution, immersing the activated and cleaned wafer in the acid mixed solution, heating to 70 ℃, simultaneously carrying out immersion treatment for 30min by using ultrasonic waves with the frequency of 20kHz to remove the adhesive and graphite on the surface of the wafer, wherein the acid solution can not only remove the residual alkalescent active agent on the surface of the wafer, but also can effectively enable the adhesive and graphite on the wafer to fall off under the combined action of heating and ultrasonic waves.
Alcohol washing: and (3) putting the degummed wafer on a tray at the bottom of a pure water tank, opening a deionized water valve, washing the residual acid mixed liquid on the surface of the wafer by using deionized water, putting the wafer on the tray at the bottom of an ethanol cleaning tank, immersing the wafer into ethanol, continuously lifting the tray to enable the clamping plug to reciprocate above and below the ethanol liquid level and continuously and slowly shake the tray, so that the wafer is shaken up and down for 30 s.
Drying: and (3) putting the wafer washed with the alcohol into a drying groove, closing a groove cover, and heating and drying for 10min by hot nitrogen at the temperature of 80 ℃ until the ethanol on the surface of the wafer is completely volatilized.
Comparative example 1
The comparative example is different from the first example in that no heating treatment is performed in the acid pickling and degumming step.
Comparative example No. two
The comparative example is different from the first example in that ultrasonic wave assistance is not performed in the acid pickling degumming step.
Comparative example No. three
The difference between the comparative example and the first example is that the volume ratio of glacial acetic acid to water in the acidic mixed solution used in the comparative example is 1: 12.
Comparative example No. four
The difference between the comparative example and the first example is that the volume ratio of glacial acetic acid to water in the acidic mixed solution used in the comparative example is 1: 7.
By inspecting the cleaned wafer, it can be found that the surface of the wafer cleaned by the method of the present invention is clean and non-damaged, as shown in fig. 1, it can be seen that the graphite and the adhesive on the surface of the wafer have fallen off, and they are separated from the wafer without manual treatment (after the wafer is cleaned, they should fall off and then fall into the tank under normal conditions, and the picture is to show that they are deliberately left above the wafer in order to prove their falling off condition); and partial adhesive and graphite are remained on the surfaces of the wafers cleaned in the first comparative example and the second comparative example, as shown in fig. 2, the graphite and the adhesive are still connected with the wafers and are not separated, so that the acid mixed solution, the heating and the ultrasonic wave assistance are supplemented in the acid cleaning degumming step in the invention, and the defect is not enough, while the comparison of the first embodiment, the third comparative example and the fourth comparative example shows that partial graphite and adhesive are still remained on the surfaces of the wafers in fig. 3 and 4, so that the volume ratio of glacial acetic acid and water in the acid mixed solution is proved to be influential to the falling of the graphite and the adhesive, and the cleaning effect is better under the mixture ratio of the invention.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.
Claims (8)
1. The method for cleaning the wafer after cutting is characterized by comprising an acid washing degumming step, wherein the acid washing degumming step is to soak the wafer which is cleaned in advance into an acid mixed solution, and after heating, the adhesive and graphite on the surface of the wafer are removed by ultrasonic assistance.
2. The method as claimed in claim 1, wherein the acidic mixture is a mixture of glacial acetic acid and water, and the volume ratio of glacial acetic acid to water is 1 (8-10).
3. The method as claimed in claim 2, wherein the heating temperature is 60-70 ℃ and the ultrasonic frequency is 20-30 kHz.
4. A method for cleaning a wafer after dicing as claimed in any one of claims 1 to 3, wherein the pre-cleaning comprises kerosene cleaning and activation cleaning, the kerosene cleaning comprising two kerosene cleaning steps.
5. The method for cleaning the wafer after being diced as claimed in claim 4, wherein the cleaning method is specifically as follows:
cleaning kerosene: immersing a wafer to be washed in kerosene, shaking the wafer up and down, fishing out the wafer after the washing is finished, immersing the wafer in clean kerosene, and shaking the wafer up and down until mortar on the surface of the wafer is washed;
activating and cleaning: respectively weighing tea saponin, fatty alcohol-polyoxyethylene ether, sodium secondary alkyl sulfonate and sodium bicarbonate, adding water to prepare an activation solution, immersing the wafer cleaned by kerosene in the activation solution, and simultaneously carrying out ultrasonic vibration cleaning;
acid pickling and degumming: immersing the activated and cleaned wafer in an acid mixed solution, heating, and removing the adhesive and graphite on the surface of the wafer by ultrasonic assistance;
alcohol washing: washing the degummed wafer with deionized water, immersing the wafer into ethanol, and shaking the wafer up and down;
drying: and heating and drying the wafer washed by the alcohol by hot nitrogen.
6. The method for cleaning the wafer after being cut as claimed in claim 5, wherein the activating solution comprises the following raw materials by mass percent: 5-15% of tea saponin, 20-30% of fatty alcohol-polyoxyethylene ether, 30-40% of secondary alkyl sodium sulfonate and 20-30% of sodium bicarbonate.
7. The method for cleaning the sliced wafer as claimed in claim 6, wherein the ultrasonic frequency in the step of activating and cleaning is 20-30KHz, and the cleaning time is 15-20 min.
8. The method as claimed in claim 7, wherein the temperature of the hot nitrogen gas is 80-90 ℃ and the drying time is 5-10 min.
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| CN202110707979.6A CN113571405A (en) | 2021-06-24 | 2021-06-24 | Method for cleaning wafer after cutting |
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| CN202110707979.6A CN113571405A (en) | 2021-06-24 | 2021-06-24 | Method for cleaning wafer after cutting |
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2021
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