CN113571229B - Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof - Google Patents

Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof Download PDF

Info

Publication number
CN113571229B
CN113571229B CN202110748896.1A CN202110748896A CN113571229B CN 113571229 B CN113571229 B CN 113571229B CN 202110748896 A CN202110748896 A CN 202110748896A CN 113571229 B CN113571229 B CN 113571229B
Authority
CN
China
Prior art keywords
parts
weight
solar cell
junction
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110748896.1A
Other languages
Chinese (zh)
Other versions
CN113571229A (en
Inventor
尹计深
杨磊
赵德平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Jingke New Material Co ltd
Original Assignee
Zhejiang Jingke New Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Jingke New Material Co ltd filed Critical Zhejiang Jingke New Material Co ltd
Priority to CN202110748896.1A priority Critical patent/CN113571229B/en
Publication of CN113571229A publication Critical patent/CN113571229A/en
Application granted granted Critical
Publication of CN113571229B publication Critical patent/CN113571229B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

The invention discloses a mesh-junction-free front silver paste for a crystalline silicon PERC solar cell and a preparation method thereof. The non-mesh front silver paste for the crystalline silicon PERC solar cell comprises the following components in percentage by weight: 86-90% of silver powder, 0.5-3% of glass powder, 4-10% of organic carrier and 0.2-3% of auxiliary agent, wherein the organic carrier comprises the following components in percentage by weight: 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent. By adopting the limiting method, the obtained non-network-junction front conductive silver paste can be matched with the non-network-junction screen plate to be smoothly printed at the line width of 18-20 mu m, the problems that the conventional screen plate fine grid line used by the front electrode uses the conventional screen plate with the network junction, the line width of the fine grid line is limited by the network junction, the improvement of the aspect ratio of the fine grid line is limited and the like in the background technology are solved, the fine grid line with the sintered line width of 28-40 mu m, the height of 12-18 mu m and the aspect ratio of 0.4-0.54 can be obtained, the current derivation capacity of a battery piece is greatly improved, and the photoelectric conversion efficiency is increased.

Description

Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a mesh-junction-free front silver paste for a crystalline silicon PERC solar cell and a preparation method thereof.
Background
Energy is a foundation stone for economic and social development, and when non-renewable energy such as electric power, coal, petroleum and the like is frequently and urgently needed, the energy problem increasingly becomes a bottleneck restricting the development of the international socioeconomic development. Solar energy is the most abundant renewable energy source available to humans, and solar cells are the direct conversion of solar energy into electrical energy. Under the promotion of huge potential of the international photovoltaic market, solar cell manufacturing industries of various countries strive to invest huge capital and expand production to strive for a place. Silicon-based solar cells remain an important item for future development of solar cells in terms of conversion efficiency and material sources.
In recent two years, crystalline silicon PERC cells have gained rapid development. The PERC technology, i.e., the passivation emitter back contact technology, is a technology that a passivation layer is formed on the back of a cell by using SiNx or Al2O3, so that absorption of long-wavelength light is increased, a potential difference between P and N electrodes is maximized, electron recombination is reduced, and thus cell conversion efficiency is improved.
The conventional screen printing plate with the mesh knots is used for the thin grid lines of the screen printing plate used for the front electrode, the line width of the thin grid lines is 24-28 microns, and the existence of the mesh knots limits the line width of the thin grid lines and the improvement of the aspect ratio of the thin grid lines, so that the development of the non-mesh-knot front silver paste which is suitable for narrowing the line width to be 18-20 microns is urgently needed, the width of the thin grid lines is reduced, the height of the thin grid lines is increased, the aspect ratio of the thin grid lines is improved, the current derivation capacity of a battery piece is improved, and the photoelectric conversion efficiency is increased.
Disclosure of Invention
Aiming at the problems in the prior art, the invention mainly solves the technical problem of providing the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell and the preparation method thereof, and the invention reasonably allocates the silver powder, the glass powder, the resin, the organic solvent and the auxiliary agent, so that the front conductive silver paste has good adaptability to the mesh-free screen printing metallization process with narrow line width (18-20 mu m), and compared with the traditional screen printing metallization process, the front conductive silver paste has good ink permeability and simultaneously gives consideration to linear molding, thereby achieving the purposes of reducing the width of a fine grid, increasing the height of the fine grid line and improving the height-width ratio of the fine grid line, further improving the current leading-out capability of a cell and increasing the photoelectric conversion efficiency.
In order to solve the technical problems, the invention adopts a technical scheme that: the non-mesh-junction front silver paste for the crystalline silicon PERC solar cell comprises the following raw materials in percentage by weight: 86-90% of silver powder, 0.5-3% of glass powder, 4-10% of organic carrier and 0.2-3% of auxiliary agent, wherein the organic carrier comprises the following components in percentage by weight: 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent.
Further, the present invention also defines that the silver powder has D50 of 1.0 to 3.0 μm and a specific surface area of 0.2 to 0.9m2(ii) g, tap density of 4.0-6.6g/cm3
Furthermore, the invention also defines that the organic solvent comprises two or more than two mixtures of butyl carbitol, butyl carbitol acetate, diethylene glycol dibutyl ether, alcohol ester dodeca, tributyl citrate, dimethyl adipate, dimethyl phthalate, dioctyl phthalate and DBE.
Further, the invention also defines that the resin comprises one or more of ethyl cellulose, acrylic resin, polyvinyl butyral resin, cellulose acetate butyrate, rosin resin, polyester resin and thermoplastic resin.
Further, the invention also defines that the thixotropic agent comprises one or two of polyamide wax and hydrogenated castor oil.
Furthermore, the invention also defines that the auxiliary agent comprises one or more of a surfactant, a dispersant and organic silicone oil.
Furthermore, the invention also defines a preparation method of the mesh-free front silver paste for the crystalline silicon PERC solar cell, which is characterized by comprising the following steps of:
1) according to the weight ratio of the materials, 3-10% of resin, 3-6% of thixotropic agent and 84-93% of solvent are uniformly mixed by using a dispersing, emulsifying and stirring integrated machine, heated and dissolved uniformly at a constant temperature, and filtered after cooling to obtain an organic carrier, wherein the temperature for heating and dissolving is limited to be 60-70 ℃ at the constant temperature, and is preferably 65 ℃;
2) adding the organic carrier, the auxiliary agent, the glass powder and the silver powder obtained in the step 1) into a centrifugal machine or a planetary mixer according to the feeding proportion, uniformly mixing, and then grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
By adopting the technology, compared with the prior art, the invention has the following beneficial effects:
at present, the width of a screen printing plate for printing the front silver paste of the conventional solar cell is 24-28 microns, the obtained conductive silver paste on the front side of the non-screen knot can be matched with the width of the screen printing plate with the non-screen knot to be smoothly printed at 18-20 microns by adopting the limited components and the preparation method, the problems that the width of a screen printing plate fine grid line used by the conventional front electrode is 24-28 microns by using the conventional screen printing plate with the screen knot, the existence of the screen knot limits the width of the fine grid line, the aspect ratio of the fine grid line is limited and improved and the like in the background technology are solved, the fine grid line with the sintering width of 28-40 microns, the height of 12-18 microns and the aspect ratio of 0.4-0.54 can be obtained, the current derivation capability of a cell is greatly improved, and the photoelectric conversion efficiency is increased.
Detailed Description
The present invention will be described in detail with reference to examples.
Example 1
The preparation method of the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell comprises the following steps:
1) according to parts by weight, 41 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 15 parts of alcohol ester twelve, 10 parts of DBE, 10 parts of dimethyl adipate, 2.5 parts of ethyl cellulose, 2 parts of rosin resin, 1 part of acrylic resin, 3 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare an organic carrier;
2. adding 7.7 parts by weight of organic carrier, 0.3 part by weight of AK500 (organic silicone oil), 0.3 part by weight of TDO (surfactant), 2.4 parts by weight of glass powder and 89.3 parts by weight of silver powder into a planetary mixer in sequence, uniformly mixing, and grinding for 8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
Example 2
The preparation method of the mesh-free front conductive silver paste for the crystalline silicon PERC solar cell comprises the following steps:
1) according to parts by weight, 46 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 10 parts of alcohol ester dodeca, 10 parts of tributyl citrate, 10 parts of dimethyl adipate, 2 parts of ethyl cellulose, 1.5 parts of cellulose acetate butyrate, 1 part of acrylic resin, 4 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare the organic carrier;
2) sequentially according to the weight ratio: adding 7.4 parts of organic carrier, 0.5 part of AK500 (organic silicone oil), 0.3 part of TDO (surfactant), 2.4 parts of glass powder and 89.4 parts of silver powder into a centrifugal machine or a planetary mixer, uniformly mixing, and grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
And (3) testing:
the solar cell piece manufactured by matching the embodiment with the non-mesh junction screen printing with the line width of 20 microns is manufactured by screen printing and sintering, the electrical property and the line type aspect ratio of the solar cell piece are tested, meanwhile, the solar cell piece is compared with the single crystal 163.75-sized crystalline silicon cell piece manufactured by the conventional screen printing with the line width of 26 microns at present, and the test data are shown in tables 1 and 2.
TABLE 1
Slurry material NCell Uoc Isc FF Rs Rsh Irev2
Comparative example 22.89 0.6876 10.787 82.51 0.90 762 0.08
Example 1 22.98 0.6903 10.816 82.32 1.05 1179 0.07
Example 2 22.94 0.6901 10.807 82.29 1.06 1056 0.07
As can be seen from table 1, the mesh-free front conductive silver paste for a solar cell prepared in the embodiment of the present invention is prepared into a crystalline silicon solar cell by matching 20 μm line width mesh-free screen printing and sintering, the open-circuit voltage and the short-circuit current are both significantly improved, and the photoelectric conversion efficiency is improved by 0.05 to 0.09% compared with that of the conventional paste.
TABLE 2
Slurry material Outer width/. mu.m Inner width/mum Height/. mu.m Aspect ratio
Comparative example 36.91 32.45 13.59 0.37
Example 1 34.30 28.34 14.28 0.42
Example 2 34.39 28.41 14.24 0.41
As can be seen from the data in table 2, the non-mesh front conductive silver paste for the solar cell prepared by the embodiment of the invention is prepared on the crystalline silicon solar cell by matching the line width of 20 μm and performing non-mesh screen printing and sintering, so that the width of the thin grid line can be obviously reduced, the height of the thin grid line can be increased, and the aspect ratio of the thin grid line can be increased.
The above description is only for the preferred embodiment of the present invention and should not be taken as limiting the scope of the present invention, and all changes that can be made in the details of the description and the equivalents thereof, whether directly or indirectly applied to other related fields, are intended to be embraced therein.

Claims (2)

1. A preparation method of mesh-junction-free front silver paste for a crystalline silicon PERC solar cell is characterized by comprising the following steps:
1) according to parts by weight, 41 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 15 parts of alcohol ester twelve, 10 parts of DBE, 10 parts of dimethyl adipate, 2.5 parts of ethyl cellulose, 2 parts of rosin resin, 1 part of acrylic resin, 3 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare an organic carrier;
2) adding 7.7 parts by weight of organic carrier, 0.3 part by weight of AK500 organic silicone oil, 0.3 part by weight of TDO surfactant, 2.4 parts by weight of glass powder and 89.3 parts by weight of silver powder into a planetary mixer in sequence, uniformly mixing, and grinding for 8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the mesh-free front conductive silver paste for the solar cell.
2. A preparation method of mesh-junction-free front silver paste for a crystalline silicon PERC solar cell is characterized by comprising the following steps:
1) according to parts by weight, 46 parts of butyl carbitol acetate, 10 parts of diethylene glycol dibutyl ether, 10 parts of alcohol ester dodeca, 10 parts of tributyl citrate, 10 parts of dimethyl adipate, 2 parts of ethyl cellulose, 1.5 parts of cellulose acetate butyrate, 1 part of acrylic resin, 4 parts of polyvinyl butyral resin and 5.5 parts of polyamide wax are mixed and stirred uniformly, heated and stirred for 1 hour at the constant temperature of 65 ℃, cooled and filtered to prepare the organic carrier;
2) sequentially according to the weight ratio: adding 7.4 parts of organic carrier, 0.5 part of AK500 organic silicone oil, 0.3 part of TDO surfactant, 2.4 parts of glass powder and 89.4 parts of silver powder into a centrifugal machine or a planetary mixer, uniformly mixing, and grinding for 6-8 times by a three-roll grinder until the fineness of the slurry is less than 7 mu m to obtain the meshless front conductive silver slurry for the solar cell.
CN202110748896.1A 2021-07-02 2021-07-02 Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof Active CN113571229B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110748896.1A CN113571229B (en) 2021-07-02 2021-07-02 Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110748896.1A CN113571229B (en) 2021-07-02 2021-07-02 Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN113571229A CN113571229A (en) 2021-10-29
CN113571229B true CN113571229B (en) 2022-06-10

Family

ID=78163477

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110748896.1A Active CN113571229B (en) 2021-07-02 2021-07-02 Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113571229B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400634A (en) * 2013-07-22 2013-11-20 上海玻纳电子科技有限公司 Conductive silver paste used for crystalline silicon solar cell front electrode and preparation method thereof
CN106251935A (en) * 2016-09-27 2016-12-21 北京市合众创能光电技术有限公司 Crystal silicon solar batteries front gate line conductive silver paste and preparation method thereof
CN107195354A (en) * 2017-04-20 2017-09-22 广东爱康太阳能科技有限公司 One kind back of the body passivation silicon solar cell positive electrode silver paste and preparation method thereof
CN108039224A (en) * 2017-12-22 2018-05-15 江苏国瓷泓源光电科技有限公司 For silicon wafer cut by diamond wire solar cell front side silver paste material and preparation method thereof
CN109243669A (en) * 2018-09-28 2019-01-18 常州聚和新材料股份有限公司 A kind of conduction positive silver paste and preparation method thereof
CN110111923A (en) * 2019-04-22 2019-08-09 苏州市贝特利高分子材料股份有限公司 Solar battery with hachure high-aspect-ratio electrodes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400634A (en) * 2013-07-22 2013-11-20 上海玻纳电子科技有限公司 Conductive silver paste used for crystalline silicon solar cell front electrode and preparation method thereof
CN106251935A (en) * 2016-09-27 2016-12-21 北京市合众创能光电技术有限公司 Crystal silicon solar batteries front gate line conductive silver paste and preparation method thereof
CN107195354A (en) * 2017-04-20 2017-09-22 广东爱康太阳能科技有限公司 One kind back of the body passivation silicon solar cell positive electrode silver paste and preparation method thereof
CN108039224A (en) * 2017-12-22 2018-05-15 江苏国瓷泓源光电科技有限公司 For silicon wafer cut by diamond wire solar cell front side silver paste material and preparation method thereof
CN109243669A (en) * 2018-09-28 2019-01-18 常州聚和新材料股份有限公司 A kind of conduction positive silver paste and preparation method thereof
CN110111923A (en) * 2019-04-22 2019-08-09 苏州市贝特利高分子材料股份有限公司 Solar battery with hachure high-aspect-ratio electrodes

Also Published As

Publication number Publication date
CN113571229A (en) 2021-10-29

Similar Documents

Publication Publication Date Title
US8906269B2 (en) Paste and solar cell using the same
CN109493992B (en) Aluminum paste for high-adhesion PERC crystalline silicon solar cell and preparation method thereof
KR101497038B1 (en) Ag paste composition for forming electrode and Preparation method thereof
CN110061074B (en) PERC solar cell
CN105118578B (en) The preparation technology of unleaded front electrode silver slurry used for solar batteries
US10497819B2 (en) Efficient back surface field paste for crystalline silicon solar cells and preparation method thereof
CN114315159B (en) Glass powder for TOPCON battery main gate electrode silver paste, and preparation method and application thereof
CN111302638B (en) Glass powder composition, conductive silver paste containing glass powder composition and solar cell
CN110120274B (en) Back electrode slurry of all-aluminum back surface field and preparation method and application thereof
CN113571228A (en) Front conductive silver paste for crystalline silicon solar cell and preparation method thereof
CN102568649B (en) Method for preparing electrode paste for grid buried crystal silicon solar cells
CN106448807A (en) Aluminum paste for passivated emitter and solar cell on back side of passivated emitter and preparation method of aluminum paste
CN113571229B (en) Mesh-junction-free front silver paste for crystalline silicon PERC solar cell and preparation method thereof
CN116543948B (en) Silver-aluminum paste for N-type TOPCON solar cell and preparation method thereof
CN112289481B (en) Solar cell front electrode slurry and preparation method and application thereof
CN105118545B (en) Lead free solar cell front electrode silver slurry
US9640298B2 (en) Silver paste composition for forming an electrode, and silicon solar cell using same
TWI419177B (en) Paste composition and electrode of solar cell using the same
CN111403079B (en) Conductive paste for back electrode of PERC crystalline silicon solar cell and preparation method thereof
KR101587267B1 (en) Aluminium paste complex and solar battery using the same
CN112585765B (en) Conductive paste for semiconductor element, preparation method thereof and PERC solar cell
CN114694878A (en) Low-temperature sintered solar cell front conductive paste and preparation method and application thereof
CN111028979A (en) Graphene solar cell silver paste and preparation method thereof
CN110010302A (en) A method of preparing PERC battery silver paste
CN112824470B (en) Organic binder based on phosphorus-containing polymer resin and preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant