CN113563072B - 一种中介电常数微波介质陶瓷 - Google Patents
一种中介电常数微波介质陶瓷 Download PDFInfo
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Abstract
本发明提供了一种中介电常数微波介质陶瓷,其配方的一般表达式为:xHfO2•yTiO2。其中35.0mol%≤x≤65.0mol%,35.0mol%≤y≤65.0mol%,且x+y=100%。本发明提供的微波介质陶瓷介电常数为30~50,Q值高达5,000~11,000(在10GHz),同时具有近零谐振频率温度系数。利用本发明提供的微波介质陶瓷,可使介质谐振器与滤波器等微波元器件同时适合于分米波与厘米波应用,可望为5G移动通讯等解决关键材料问题。因此,本发明在工业上有着极大的价值。
Description
技术领域
本发明涉及微波通讯领域,具体涉及一种谐振器、滤波器用中介电常数微波介质陶瓷。
背景技术
近年来,随着移动通讯与卫星通讯技术的迅速发展,对介质谐振器与滤波器等微
波元器件用的微波介质陶瓷的需求正在日益增长。而随着5G移动通讯的迅速发展,对中介
电常数超低损耗微波介质陶瓷提出了迫切的要求。其基本性能要求为:介电常数 30≤≤
50, 品质因数 Q≥5,000 (在工作频率),谐振频率温度系数= 0 5 ppm/℃。
目前已有的Ba-基复合钙钛矿陶瓷等虽有中介电常数、超低损耗与近零写真频率温度系数,然其通常含有Ta与Nb等贵金属,同时微波介电性能工艺敏感性过强、难以控制等缺点。而BaTi4O9,Ba2Ti9O20、(Zr, Sn)TiO4陶瓷等则存在Q值偏低等问题,难以适应5G移动通讯向更高频段发展的需求。
发明内容
一种中介电常数微波介质陶瓷,其配方的一般表达式为:xHfO2• yTiO2。其中35.0mol% ≤ x ≤ 65.0mol%,35.0mol% ≤ y ≤65.0mol%,且x+y =100%。
一种以HfTiO4为主晶相的微波介质陶瓷。
一种具有上述配方的微波介质陶瓷,具有中介电常数(30-50)、超低介电损耗(Q=
5,000~11,000 at 10GHz)与近零谐振频率温度系数(-10ppm/℃≤ ≤+10ppm/℃),作为
微波谐振器、滤波器的关键材料,适用于微波通讯领域。
本发明的有益效果
1、已有的(Zr,Sn)TiO4陶瓷等存在Q值偏低等问题,难以适应5G移动通讯向更高频段发展的需求。本发明提供的介质陶瓷具有超低损耗(Q=5,000~11,000 at 10GHz)与良好的温度稳定性的特点,可为5G移动通讯等提供关键基础材料。
2、本发明提供的微波介质陶瓷以氧化铪为栅极材料,与硅等半导体材料有着良好的兼容性。
由于Hf与Zr、Sn不同的电子结构,从而使得以HfTiO4为主晶相的介质陶瓷具有低的非简谐振动项,因而具有更低的介电损耗。
附图说明
图1为不同成分陶瓷的XRD图谱。
具体实施方式
首先,将纯度为99.9%以上的HfO2与TiO2按比例用湿式球磨法混合24小时(溶剂为无水乙醇),添加粘结剂,接着造粒,然后通过单轴压力成形在1000 kg/cm2的压力下制备出直径6 mm、厚度3-6 mm的陶瓷坯体,最后在1375℃ - 1450℃、大气气氛中烧结3小时以制备所需的微波介质陶瓷。
用粉末X线衍射法对烧结后的陶瓷试样进行了物相分析,而用圆柱介质谐振器法在10GHz进行了微波介电性能的评价。
实施例中陶瓷的XRD图谱如图1所示,可获得HfTiO4单相(x=y=50mol%; x=45mol%,
y=55mol%)或以其为主晶相(x=65mol%, y=35mol%)的结构。实施例中材料的微波介电性能
与组成的关系如表1所示。从表1可知,在本发明的陶瓷体系中,随着TiO2含量的增加,材料
的介电常数趋于增加,τ f 由负向正值变化,而Q值先增加,后略微减小。在本实施例所有组分
配方中,HfO2 =50.0 mol%,TiO2 = 50.0mol%的配方具有最佳的微波介电性能: = 38.2, Q =11,000在10GHz,= -4 ppm/℃。
表1 微波介电性能与组成的关系
Claims (2)
1.一种中介电常数微波介质陶瓷,其特征在于,以HfTiO4为主晶相,配方的表达式为:xHfO2• yTiO2;其中35.0mol% ≤ x ≤ 65.0mol%,35.0mol% ≤ y ≤65.0mol%,且x+y =100%;
所述中介电常数微波介质陶瓷的制备方法为:
将纯度为99.9%以上的HfO2与TiO2按比例用湿式球磨法混合24小时,溶剂为无水乙醇,添加粘结剂,接着造粒,然后通过单轴压力成形在1000 kg/cm2的压力下制备出直径6 mm、厚度3-6 mm的陶瓷坯体,最后在1375℃ - 1450℃、大气气氛中烧结3小时以制备所需的微波介质陶瓷。
2.根据权利要求1所述的中介电常数微波介质陶瓷,其特征在于,作为微波谐振器、滤波器的关键材料,用于微波通讯领域。
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Citations (3)
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CN1751415A (zh) * | 2003-02-18 | 2006-03-22 | 大见忠弘 | 移动终端用天线和利用此天线的移动终端 |
JP2008156214A (ja) * | 2006-11-28 | 2008-07-10 | Ngk Insulators Ltd | コーディエライトセラミックス、及びコーディエライトセラミックスの製造方法 |
FR2959505A1 (fr) * | 2010-04-28 | 2011-11-04 | Saint Gobain Ct Recherches | Grains de mullite revetus. |
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US7572695B2 (en) * | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
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Patent Citations (3)
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CN1751415A (zh) * | 2003-02-18 | 2006-03-22 | 大见忠弘 | 移动终端用天线和利用此天线的移动终端 |
JP2008156214A (ja) * | 2006-11-28 | 2008-07-10 | Ngk Insulators Ltd | コーディエライトセラミックス、及びコーディエライトセラミックスの製造方法 |
FR2959505A1 (fr) * | 2010-04-28 | 2011-11-04 | Saint Gobain Ct Recherches | Grains de mullite revetus. |
Non-Patent Citations (3)
Title |
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Effects of Ti Doping on the Dielectric Properties of HfO2 Nanoparticles;S. Pokhriyal et al.;《AIP Conference Proceedings》;20160510;第1728卷(第1期);第020457-1至第020457-6页 * |
HfTiO高k栅介质Ge MOS电容的制备及特性分析;朱秋玲等;《压电与声光》;20071015(第05期);第583-585页 * |
HfxTi(1-x)O2电子结构与光学性质的第一性原理研究;段国玉等;《红外与毫米波学报》;20100815(第04期);第264-267页 * |
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