CN1135564C - 用于高速存储器读操作的总线中点保持电路 - Google Patents
用于高速存储器读操作的总线中点保持电路 Download PDFInfo
- Publication number
- CN1135564C CN1135564C CNB991031067A CN99103106A CN1135564C CN 1135564 C CN1135564 C CN 1135564C CN B991031067 A CNB991031067 A CN B991031067A CN 99103106 A CN99103106 A CN 99103106A CN 1135564 C CN1135564 C CN 1135564C
- Authority
- CN
- China
- Prior art keywords
- driver
- mid point
- bus
- voltage
- pull
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07474898A JP3795665B2 (ja) | 1998-03-23 | 1998-03-23 | バス電位中間電圧セット回路及びその制御方法 |
JP074748/98 | 1998-03-23 | ||
JP074748/1998 | 1998-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1231480A CN1231480A (zh) | 1999-10-13 |
CN1135564C true CN1135564C (zh) | 2004-01-21 |
Family
ID=13556199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991031067A Expired - Fee Related CN1135564C (zh) | 1998-03-23 | 1999-03-23 | 用于高速存储器读操作的总线中点保持电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6097642A (zh) |
JP (1) | JP3795665B2 (zh) |
KR (1) | KR100336150B1 (zh) |
CN (1) | CN1135564C (zh) |
TW (1) | TW413778B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6101145A (en) * | 1998-12-21 | 2000-08-08 | Motorola, Inc. | Sensing circuit and method |
US7071736B2 (en) * | 2003-05-20 | 2006-07-04 | Cray Inc. | Half-swing line precharge method and apparatus |
US9761285B1 (en) * | 2016-02-26 | 2017-09-12 | Globalfoundries Inc. | Sense amplifier and latching scheme |
KR101868320B1 (ko) | 2016-08-17 | 2018-07-19 | (주)디엠타포린 | 디지털 프린팅 기법을 통한 폴리에틸렌 원단 또는 폴리프로필렌 원단의 인쇄방법 및 그 인쇄방법에 의해 프린팅된 폴리에틸렌 원단 또는 폴리프로필렌 원단 |
CN111433852A (zh) * | 2017-12-12 | 2020-07-17 | 索尼半导体解决方案公司 | 半导体电路和半导体电路*** |
CN114442715B (zh) * | 2021-12-29 | 2023-08-18 | 中国航空工业集团公司西安航空计算技术研究所 | 一种28v或开路的离散量输出电路 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153271A (ja) * | 1993-11-29 | 1995-06-16 | Sanyo Electric Co Ltd | 出力回路 |
US5655113A (en) * | 1994-07-05 | 1997-08-05 | Monolithic System Technology, Inc. | Resynchronization circuit for a memory system and method of operating same |
US5751978A (en) * | 1995-11-13 | 1998-05-12 | Motorola, Inc. | Multi-purpose peripheral bus driver apparatus and method |
-
1998
- 1998-03-23 JP JP07474898A patent/JP3795665B2/ja not_active Expired - Fee Related
-
1999
- 1999-03-19 KR KR1019990009374A patent/KR100336150B1/ko not_active IP Right Cessation
- 1999-03-19 TW TW088104441A patent/TW413778B/zh not_active IP Right Cessation
- 1999-03-22 US US09/273,559 patent/US6097642A/en not_active Expired - Lifetime
- 1999-03-23 CN CNB991031067A patent/CN1135564C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1231480A (zh) | 1999-10-13 |
US6097642A (en) | 2000-08-01 |
KR100336150B1 (ko) | 2002-05-09 |
JPH11273356A (ja) | 1999-10-08 |
TW413778B (en) | 2000-12-01 |
KR19990078071A (ko) | 1999-10-25 |
JP3795665B2 (ja) | 2006-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030410 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030410 Address after: Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040121 Termination date: 20140323 |