CN113555461B - Photodiode based on SiC and tungsten diselenide heterojunction and preparation method thereof - Google Patents
Photodiode based on SiC and tungsten diselenide heterojunction and preparation method thereof Download PDFInfo
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- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 title claims abstract description 82
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Abstract
The invention relates to a photodiode based on SiC and tungsten diselenide heterojunction and a preparation method thereof, wherein the photodiode comprises the following components: a SiC substrate layer; the insulating layer is arranged on the SiC substrate layer; a SiC window penetrating the insulating layer to the surface of the SiC substrate layer; a plurality of layers of tungsten diselenide nano sheets are stacked on the SiC window along the width direction of the SiC window, and two ends of the tungsten diselenide nano sheets are carried on the insulating layer; a first metal electrode on the tungsten diselenide nanoplatelets and the insulating layer; and one end of the second metal electrode is carried on the insulating layer, and the other end of the second metal electrode is contacted with the SiC substrate layer along the inner side wall of the SiC window. The photodiode of the invention has faster response time and long-term stability, and is beneficial to improving the detection capability of the device. In addition, the photodiodes of the present invention exhibit broad spectral response characteristics from ultraviolet to near infrared, which can widen the range of use of such detectors.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and relates to a photodiode based on a heterojunction of SiC and tungsten diselenide and a preparation method thereof.
Background
The photoelectric detector has wide application in the fields of optical communication, spectral analysis, safety monitoring, infrared imaging, astronomical detection and the like. With the increasing diversity of application fields, there is an increasing demand for photodetectors capable of achieving efficient detection in a broad spectral range of multiple bands. In the past, when detecting different wave band ranges, it is often necessary to select semiconductor materials with corresponding energy band structures, such as GaN, si and InGaAs, which are respectively used for the preparation of ultraviolet, visible and near infrared wave band detectors due to the difference of forbidden band widths. For mid-infrared and even far-infrared bands, semiconductor materials with smaller forbidden bandwidths are required to be developed. This is often limited by the band characteristics of the material itself, which may need to be selected and switched for different applications and environments, which may lead to complexity in the integration and process of the device. The need for development of broadband-responsive detectors is therefore increasing.
SiC is an indirect bandgap semiconductor material that has received much attention in recent years and is not suitable for use in the manufacture of light emitting devices, but has a good response to ultraviolet radiation. In addition, it has many unique properties such as ultraviolet-visible light absorption, semi-insulating-semiconductor characteristics, wide bandgap (3.3 eV), high breakdown field strength (2.5 MV/cm), high thermal conductivity (2.7W/cm k), etc., and can be used for preparing high-frequency, high-voltage power electronic devices and ultraviolet photodetectors.
In the field of novel two-dimensional materials, transition metal chalcogenides have been found to have unique optical and electrical properties, such as visible-infrared (400-1500 nm), moderate band gap size (0.8-2 eV), high carrier mobility (up to 100 cm) 2 Vs) and thickness, strain-tuned bandgap size, direct-indirect bandgap conversion, etc., have attracted extensive attention for research in electronic and optoelectronic devices. Among them, tungsten diselenide is a very representative two-dimensional layered material, has a stable structure, is one of a small number of bipolar semiconductors, and has excellent electrical and photoelectric properties, which makes it have great potential applications in field effect transistors, photodetectors, piezoelectric sensors, photovoltaic solar cells, and the like.
In the preparation of the traditional heterojunction, due to lattice matching and the requirement for expanding defect control, the problems of lattice mismatch and the like are considered in the process of combining different materials into the heterojunction, and a common solution is to introduce a buffer layer to be compatible with films with different lattice constants, but more uncertain factors are brought, so that different bulk materials are limited in device integration. In recent years, a two-dimensional material and a bulk material are used for assembling and designing a van der Waals heterojunction, and a new direction is provided for integrating a bulk material semiconductor (such as Si, gaN, gaAs and the like) by utilizing advantage complementation among material systems. Because of no limitation of lattice matching, the mixed-dimensional heterojunction formed by the novel two-dimensional material and the third-generation semiconductor material silicon carbide has rapid development on device integration, and a new way is developed for preparing the integrated, high-sensitivity and wide-spectrum detector.
Therefore, how to prepare photodiodes with low noise, high response, broad spectrum and easy integration is a problem to be solved.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a photodiode based on a heterojunction of SiC and tungsten diselenide and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides a photodiode based on a SiC and tungsten diselenide heterojunction, which comprises the following steps:
a SiC substrate layer;
the insulating layer is arranged on the SiC substrate layer;
a SiC window penetrating through the insulating layer to the surface of the SiC substrate layer;
a plurality of layers of tungsten diselenide nano sheets are stacked on the SiC window along the width direction of the SiC window, two ends of the tungsten diselenide nano sheets are carried on the insulating layer, and the tungsten diselenide nano sheets are contacted with the SiC substrate layer in the SiC window along the inner side wall of the SiC window;
a first metal electrode on the tungsten diselenide nanoplatelets and the insulating layer;
and one end of the second metal electrode is carried on the insulating layer, and the other end of the second metal electrode is contacted with the SiC substrate layer along the inner side wall of the SiC window.
In one embodiment of the invention, the SiC substrate layer is n-type and the tungsten diselenide nanoplatelets are p-type.
In one embodiment of the invention, the SiC substrate layer has a thickness of 200 to 400 μm.
In one embodiment of the present invention, the material of the insulating layer is silicon dioxide.
In one embodiment of the present invention, the thickness of the insulating layer is 100 to 300nm.
In one embodiment of the invention, the thickness of the tungsten diselenide nanoplatelets is 20-200 nm.
In one embodiment of the invention, the length of the tungsten diselenide nanoplatelets is greater than the width of the SiC window and less than the length of the SiC window.
In one embodiment of the invention, the SiC window has a length of 20 to 50 μm and a width of 5 to 10 μm.
In one embodiment of the present invention, the material of the first metal electrode and the second metal electrode is one or more of gold, silver, chromium, copper, and titanium.
Another embodiment of the present invention provides a method for preparing a photodiode based on a heterojunction of SiC and tungsten diselenide, for preparing the photodiode according to any one of the above embodiments, the method comprising the following steps:
selecting a SiC substrate layer;
depositing an insulating layer on the SiC substrate layer;
etching a SiC window penetrating through the insulating layer to the surface of the SiC substrate layer on the insulating layer;
a plurality of layers of tungsten diselenide nano sheets are stacked and transferred onto the SiC window along the width direction of the SiC window, two ends of each tungsten diselenide nano sheet are carried on the insulating layer, and each tungsten diselenide nano sheet is contacted with the SiC substrate layer in the SiC window along the inner side wall of the SiC window;
depositing a first metal electrode on the tungsten diselenide nano-sheet and the insulating layer, and depositing a second metal electrode on the insulating layer, wherein one end of the second metal electrode is carried on the insulating layer, and the other end of the second metal electrode is contacted with the SiC substrate layer along the inner side wall of the SiC window;
and annealing the SiC substrate layer, the insulating layer, the SiC window, the tungsten diselenide nano-sheet, the first metal electrode and the second metal electrode to prepare the photodiode.
Compared with the prior art, the invention has the beneficial effects that:
the built-in electric field formed by the overlapping area of the photodiodes of the invention shows obvious rectifying behavior, has quicker response time and long-term stability, and is beneficial to improving the detection capability of devices. In addition, the photodiode of the present invention exhibits a broad spectral response characteristic from ultraviolet to near infrared (350 nm to 900 nm), can widen the range of use of such a detector, and is small in size.
The tungsten diselenide is a novel two-dimensional layered material, the band gap is adjustable, the obtained novel heterojunction photodiode has the characteristics of quick response, high detection sensitivity and high stability, and the photodiode has the characteristic of low noise.
The photodiode of the invention is directly constructed on the SiC substrate, has low cost, good heat dissipation and simple process, is easy to integrate and is suitable for large-scale mass production.
Other aspects and features of the present invention will become apparent from the following detailed description, which refers to the accompanying drawings. It is to be understood that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
Fig. 1 is a schematic structural diagram of a photodiode based on a heterojunction of SiC and tungsten diselenide according to an embodiment of the present invention;
FIG. 2 is a device diagram of a photodiode based on a heterojunction of SiC and tungsten diselenide under an optical microscope according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the photoelectric response of a photodiode based on a heterojunction of SiC and tungsten diselenide at different optical powers of 405nm wavelength according to an embodiment of the present invention;
FIG. 4 is a schematic diagram showing the current change of the light source in the on-state and the off-state based on the change of the time ratio of the heterojunction of SiC and tungsten diselenide according to the embodiment of the invention;
fig. 5 is a schematic flow chart of a preparation method of a photodiode based on a heterojunction of SiC and tungsten diselenide according to an embodiment of the present invention.
Reference numerals:
SiC substrate layer-1; an insulating layer-2; siC window-3; tungsten diselenide nanosheets-4; a first metal electrode-5; a second metal electrode-6.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 1, fig. 1 is a schematic structural diagram of a photodiode based on a heterojunction of SiC and tungsten diselenide according to an embodiment of the present invention. The invention provides a photodiode based on a heterojunction of SiC and tungsten diselenide, which comprises:
a SiC substrate layer 1;
an insulating layer 2 provided on the SiC substrate layer 1;
a SiC window 3 penetrating the insulating layer 2 to the surface of the SiC substrate layer 1;
a plurality of layers of tungsten diselenide nano-sheets 4 are stacked on the SiC window 3 along the width direction of the SiC window 3, two ends of the tungsten diselenide nano-sheets 4 are carried on the insulating layer 2, and the tungsten diselenide nano-sheets 4 are contacted with the SiC substrate layer 1 in the SiC window 3 along the inner side wall of the SiC window 3;
a first metal electrode 5 located on the tungsten diselenide nanoplatelets 4 and the insulating layer 2;
and a second metal electrode 6, one end of the second metal electrode 6 is mounted on the insulating layer 2, and the other end of the second metal electrode 6 is in contact with the SiC substrate layer 1 along the inner side wall of the SiC window 3.
Further, the SiC substrate layer 1 is n-type, and the tungsten diselenide nano-sheet 4 is p-type, so that the p-type tungsten diselenide nano-sheet 4 and the n-type SiC window 3 are contacted to form a pn junction.
Further, the thickness of the SiC substrate layer 1 is 200 to 400 μm.
Further, the material of the insulating layer 2 is silicon dioxide.
Further, the thickness of the insulating layer 2 is 100 to 300nm.
Further, the thickness of the tungsten diselenide nano-sheet 4 is 20-200 nm. If the tungsten diselenide nano-sheet 4 is too thin, the photoelectric response capability of the tungsten diselenide nano-sheet 4 is poor, and if the tungsten diselenide nano-sheet 4 is too thick, the contact between the tungsten diselenide nano-sheet 4 and the SiC substrate layer 1 is poor.
Further, the length of the tungsten diselenide nanoplatelets 4 is greater than the width of the SiC window and less than the length of the SiC window. Thus, the electrode is convenient to contact with the tungsten diselenide nano-sheet 4 only, and the position of a junction area can be prevented from being touched.
Further, the length of the SiC window is 20-50 μm, and the width of the SiC window is 5-10 μm. The purpose of this arrangement is that the etching process is relatively fixed, and the size of the mechanically exfoliated tungsten diselenide nanoplatelets 4 is relatively adapted to the size range of the SiC window.
Further, the materials of the first metal electrode 5 and the second metal electrode 6 are one or more of gold, silver, chromium, copper and titanium, for example, the materials of the first metal electrode 5 and the second metal electrode 6 are titanium/gold (i.e. titanium is located on gold), wherein the thickness of the titanium layer is 4-10 nm, and the thickness of the gold layer is 20-100 nm.
Referring to fig. 2, it can be seen from fig. 3 and 4 that the photodiode of the present invention has better photoelectric performance.
The built-in electric field formed by the overlapping area of the photodiodes of the invention shows obvious rectifying behavior, has quicker response time and long-term stability, and is beneficial to improving the detection capability of devices. In addition, the photodiode of the present invention exhibits a broad spectral response characteristic from ultraviolet to near infrared (350 nm to 900 nm), can widen the range of use of such a detector, and is small in size.
The tungsten diselenide is a novel two-dimensional layered material, the band gap is adjustable, the obtained novel heterojunction photodiode has the characteristics of quick response, high detection sensitivity and high stability, and the photodiode has the characteristic of low noise.
The photodiode of the invention is directly constructed on the SiC substrate, has low cost, good heat dissipation and simple process, is easy to integrate and is suitable for large-scale mass production.
Example two
Referring to fig. 5, fig. 5 is a schematic flow chart of a preparation method of a photodiode based on a heterojunction of SiC and tungsten diselenide according to an embodiment of the present invention. The embodiment provides a preparation method of a photodiode based on a heterojunction of SiC and tungsten diselenide on the basis of the embodiment, which comprises the following steps:
and 1, selecting a SiC substrate layer 1.
Specifically, for example, a 4-inch n-type heavily doped single-throw SiC substrate layer 1 (SiC substrate layer thickness of, for example, 360 μm) is cut to a size of 1cm×1cm, then etched by BOE (Buffered Oxide Etch, buffered oxide etching solution), and then sequentially ultrasonically cleaned for 5 to 10 minutes, such as for 10 minutes, with an acetone solution, an isopropyl alcohol solution and deionized water to remove the surface oxide layer thereof, and dried with high-purity nitrogen.
And 2, depositing an insulating layer 2 on the SiC substrate layer 1.
Specifically, the insulating layer 2 of silicon dioxide is deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition ) techniques, for example 150nm thick.
And 3, etching a SiC window 3 penetrating through the insulating layer 2 to the surface of the SiC substrate layer 1 on the insulating layer 2.
Specifically, a laser direct write lithography process (one lithography) is used to define the pattern of the SiC window, and a BOE solution (e.g., NH) 4 40g of F, 18ml of HF and 60ml of deionized water are taken, and silicon dioxide is removed by wet etching (etching time is 5min, for example) to expose the surface of the SiC substrate layer 1, for example, the length and width of the SiC window 3 are 50 μm and 10 μm respectively.
And 4, transferring a plurality of layers of tungsten diselenide nano sheets 4 to the SiC window 3 in a lamination manner along the width direction of the SiC window 3, wherein the tungsten diselenide nano sheets 4 are contacted with the SiC substrate layer 1 in the SiC window 3 along the inner side wall of the SiC window 3.
Specifically, the tungsten diselenide nano-sheet 4 is prepared by adopting a mechanical stripping method, or the tungsten diselenide nano-sheet 4 is prepared by growing the tungsten diselenide nano-sheet on a substrate, then a tungsten diselenide layer with a required thickness, for example, a thickness of 20nm is selected by an optical microscope and an atomic force microscope, then the tungsten diselenide nano-sheet 4 is directionally transferred onto the SiC window 3 by adopting a dry transfer or wet transfer technology, both ends of the tungsten diselenide nano-sheet are carried on the insulating layer 2, and the tungsten diselenide nano-sheet 4 is contacted with the SiC substrate layer 1 in the SiC window 3 along the inner side wall of the SiC window 3.
And 5, depositing a first metal electrode 5 on the tungsten diselenide nano-sheet 4 and the insulating layer 2, and depositing a second metal electrode 6 on the insulating layer 2, wherein one end of the second metal electrode 6 is carried on the insulating layer 2, and the other end of the second metal electrode is contacted with the SiC substrate layer 1 along the inner side wall of the SiC window 3.
Specifically, an electrode pattern is defined by a laser direct writing lithography process (secondary lithography), then titanium/gold electrodes with the thickness of 4nm/50nm are deposited on the contact position of the upper surface of the silicon dioxide layer and the tungsten diselenide nano-sheet and the SiC window position respectively by adopting an electron beam evaporation method, so as to prepare a first metal electrode 5 and a second metal electrode 6, and then stripping and cleaning processes are carried out.
And 6, annealing the SiC substrate layer 1, the insulating layer 2, the SiC window 3, the tungsten diselenide nano-sheet 4, the first metal electrode 5 and the second metal electrode 6 to prepare the photodiode.
Specifically, the devices prepared in step 1 to step 5 are subjected to a thermal annealing process, so that the photodiode based on the heterojunction of SiC and tungsten diselenide can be obtained, for example, the thermal annealing is performed under the conditions of nitrogen atmosphere, the temperature of 150 ℃ and the annealing time of 20 min.
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic point described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristic data points described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (7)
1. A photodiode based on a heterojunction of SiC and tungsten diselenide, comprising:
a SiC substrate layer; the thickness of the SiC substrate layer is 200-400 mu m;
the insulating layer is arranged on the SiC substrate layer; the thickness of the insulating layer is 100-300 nm;
a SiC window penetrating through the insulating layer to the surface of the SiC substrate layer;
a plurality of layers of tungsten diselenide nano sheets are stacked on the SiC window along the width direction of the SiC window, two ends of each tungsten diselenide nano sheet are carried on the insulating layer, and each tungsten diselenide nano sheet is contacted with the SiC substrate layer in the SiC window along the inner side wall of the SiC window; the thickness of the tungsten diselenide nano-sheet is 200nm;
a first metal electrode on the tungsten diselenide nanoplatelets and the insulating layer;
and one end of the second metal electrode is carried on the insulating layer, and the other end of the second metal electrode is contacted with the SiC substrate layer along the inner side wall of the SiC window.
2. The SiC and tungsten diselenide heterojunction-based photodiode of claim 1, wherein the SiC substrate layer is n-type and the tungsten diselenide nanoplatelets are p-type.
3. The photodiode based on SiC and tungsten diselenide heterojunction as claimed in claim 1, wherein the material of said insulating layer is silicon dioxide.
4. The SiC and tungsten diselenide heterojunction-based photodiode of claim 1, wherein the length of the tungsten diselenide nanoplatelets is greater than the width of the SiC window and less than the length of the SiC window.
5. The photodiode based on SiC and tungsten diselenide heterojunction as claimed in claim 1, wherein the SiC window has a length of 20 to 50 μm and a width of 5 to 10 μm.
6. The SiC and tungsten diselenide heterojunction-based photodiode of claim 1, wherein the material of the first metal electrode and the second metal electrode is one or more of gold, silver, chromium, copper, titanium.
7. A method of manufacturing a photodiode based on a heterojunction of SiC and tungsten diselenide, characterized in that it is used for manufacturing a photodiode according to any one of claims 1 to 6, said method of manufacturing comprising the steps of:
selecting a SiC substrate layer;
depositing an insulating layer on the SiC substrate layer;
etching a SiC window penetrating through the insulating layer to the surface of the SiC substrate layer on the insulating layer;
a plurality of layers of tungsten diselenide nano sheets are stacked and transferred onto the SiC window along the width direction of the SiC window, two ends of each tungsten diselenide nano sheet are carried on the insulating layer, and each tungsten diselenide nano sheet is contacted with the SiC substrate layer in the SiC window along the inner side wall of the SiC window; the thickness of the tungsten diselenide nano-sheet is 200nm;
depositing a first metal electrode on the tungsten diselenide nano-sheet and the insulating layer, and depositing a second metal electrode on the insulating layer, wherein one end of the second metal electrode is carried on the insulating layer, and the other end of the second metal electrode is contacted with the SiC substrate layer along the inner side wall of the SiC window;
and annealing the SiC substrate layer, the insulating layer, the SiC window, the tungsten diselenide nano-sheet, the first metal electrode and the second metal electrode to prepare the photodiode.
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