CN113552735B - Silicon-based electro-optic modulator traveling wave electrode based on double-layer transmission line structure and preparation method thereof - Google Patents
Silicon-based electro-optic modulator traveling wave electrode based on double-layer transmission line structure and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 230000005540 biological transmission Effects 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 172
- 238000000034 method Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000002355 dual-layer Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000007704 transition Effects 0.000 description 21
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a silicon-based electro-optical modulator traveling wave electrode based on a double-layer transmission line structure and a preparation method thereof. The traveling wave electrode comprises a substrate, a silicon dioxide layer, a doped silicon layer, a first covering layer, a first metal layer, a second covering layer and a second metal layer which are sequentially arranged from bottom to top. And window structures penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer are further arranged on two sides of the traveling wave electrode. The substrate is hollowed by forming the through hole, so that the matching degree of the equivalent refractive index of the optical signal and the microwave signal is effectively increased, the loss caused by the base is reduced, and the bandwidth is further improved. And by optimizing the active region to reduce loss, the metal loss reduction can be combined with dielectric loss to further optimize modulator performance.
Description
Technical Field
The invention relates to a silicon-based electro-optical modulator traveling wave electrode based on a double-layer transmission line structure and a preparation method thereof, belonging to the technical field of optical communication devices.
Background
With the advent of the 5G era, the number of fixed networks and mobile networks has gradually increased, the data volume of high-performance computing has sharply increased, and the requirements of people on data have also become higher and higher. The continuing trend in data traffic has been a necessary trend, requiring transmission systems to move toward high rates and high throughput. How to construct a communication network with stronger transmission capability, longer transmission distance and higher transmission efficiency is a focus of attention.
In the whole optical communication network, the electro-optical modulator is a very important device, and is responsible for converting an electric signal into an optical signal convenient to transmit, so that the preparation of the electro-optical modulator with larger bandwidth, lower loss and high integration level is very important. Since silicon materials have a weak electro-optic effect, it is necessary to use the plasma dispersion effect in the preparation of silicon-based modulators. The plasma dispersion effect is to dope different carriers, usually phosphorus and boron, into silicon material, so as to change the concentration of the carriers, thereby causing the change of refractive index and modulating. The skin effect is that when a high frequency current exists in a conductor, the current in the original conductor can only flow near the surface, so that the effective cross-sectional area of the transmission line is reduced, and the resistance of the transmission line is increased. Considering the proximity effect of the high-frequency signal, when the high-frequency current flows in the two conductors in opposite directions to each other, the current concentrates on the near side of the conductors. Therefore, increasing the skin depth and adding a layer of metal on the outer side of the conductor can effectively reduce the resistance and thus the loss.
Mach-Zehnder electro-optic modulators are one of the commonly used modulators. The Mach-Zehnder interferometer consists of a beam splitter, a beam combiner and two modulation arms, wherein the two modulation arms are symmetrically distributed, and the modulation arms are main places for carrying out electro-optical action. The input light is transmitted in the input waveguide and then split into two identical beams by a beam splitter, which are combined into one beam by a beam combiner after passing through the two waveguides, respectively. If the transmission is not lossy, and the light is not modulated, i.e. no voltage is applied across the modulation arm, the output light is identical to the input light. If a voltage is applied to both arms, the refractive index of the modulating arm will change and the wavelength propagating in the waveguide will also change, creating a phase difference. The structure is simple to realize, the allowed working wavelength range is large, and the optical loss is low. Compared with a coplanar strip line structure, the coplanar waveguide structure can shield signals better and avoid crosstalk between signals.
Chinese patent document CN112379538A discloses a coplanar stripline traveling wave electrode and a silicon-based mach-zehnder modulator, having a broadband transition structure of coplanar waveguide-coplanar stripline, where the coplanar stripline traveling wave electrode includes a first ground line, a signal line, and a second ground line; the first earth electrode access end, the signal access end, the second earth electrode access end, the first transition section, the second transition section and the field dissipation transition section form a coplanar waveguide-coplanar strip line transition structure; the coplanar waveguide structure is composed of the first earth electrode access end, the signal access end and the second earth electrode access end. However, the patent still has the problems of larger microwave loss and smaller bandwidth of the traveling wave electrode.
Much research has focused on optimizing the modulation region to reduce losses, but there is less method to further improve bandwidth by reducing traveling wave electrode metal losses as well as dielectric losses. Therefore, it is necessary to emphasize the combination of both to increase the bandwidth. There are many materials for preparing the traveling wave electrode, such as lithium niobate crystal electro-optic modulator and III-V electro-optic modulator, which can obtain larger bandwidth, but have high manufacturing cost and large device volume, so that the integration development is not facilitated. The silicon material has the advantages of rich materials, low manufacturing cost, compatibility with the developed Complementary Metal Oxide Semiconductor (CMOS) process and the like, and is favored by researchers, so that the silicon-based electro-optic modulator with lower research loss, larger bandwidth and high integration degree is imperative, and a solid foundation is laid for the development of 100G and 400G optical communication.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a silicon-based electro-optic modulator traveling wave electrode based on a double-layer transmission line structure and a preparation method thereof. The modulator traveling wave electrode of the invention adopts a method of combining the technology of preparing two layers of metal on the metal electrode and hollowing the substrate to further improve the bandwidth.
Description of the terminology:
the coplanar waveguide, named Coplanar waveguide, CPW for short, consists of three metal wires in the same plane, signal wire in the middle and ground wires in the two sides.
The coplanar strip line is one of Coplanar stripe lines, CPS and transmission line, and consists of two metal lines in the same plane, one signal line and one ground line.
Silicon-based, one type of silicon material, commonly used in the manufacture of modulators is SOI material, which consists of two materials, silicon and silicon dioxide.
The technical scheme of the invention is as follows:
the traveling wave electrode of the silicon-based electro-optic modulator based on the double-layer transmission line structure comprises a substrate, a silicon dioxide layer, a doped silicon layer, a first covering layer, a first metal layer, a second covering layer and a second metal layer which are sequentially arranged from bottom to top;
the doped silicon layer sequentially comprises a left slab region, a left first heavy doped region, a left first middle doped region, a left first light doped region, a left second middle doped region, a second heavy doped region, a right second middle doped region, a right second light doped region, a right first middle doped region, a right first heavy doped region and a right slab region from left to right;
the first covering layer is provided with a first contact electrode, a second contact electrode, a third contact electrode, a fourth contact electrode, a fifth contact electrode and a sixth contact electrode;
the first metal layer is provided with a first signal wire, a first grounding wire, a second signal wire, a third grounding wire and a fourth grounding wire;
the second covering layer is provided with a seventh contact electrode, an eighth contact electrode, a ninth contact electrode and a tenth contact electrode;
the second metal layer is provided with a third signal wire, a fifth grounding wire, a fourth signal wire and a sixth grounding wire;
the two sides of the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure are also provided with window structures penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer.
According to a preferred embodiment of the present invention, the substrate is an SOI substrate.
According to a preferred embodiment of the present invention, the first cover layer, the second cover layer and the first metal layer are made of silicon dioxide.
According to the invention, preferably, the carriers doped in the first heavily doped region, the first middle doped region and the first lightly doped region are P ions;
further preferably, the first heavily doped region has a doping concentration of 2×10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 。
According to the invention, preferably, the carriers doped in the second heavily doped region, the second middle doped region and the second lightly doped region are B ions;
further preferably, the second weightThe doping concentration of the doped region is 2 multiplied by 10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 。
According to a preferred embodiment of the present invention, the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode penetrate through the first cover layer; the first contact electrode is positioned above the left slab region, the second contact electrode is positioned above the left first heavily doped region, the third contact electrode and the fourth contact electrode are both positioned above the second heavily doped region, the fifth contact electrode is positioned above the right first heavily doped region, and the sixth contact electrode is positioned above the right slab layer;
further preferably, the materials of the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode are aluminum.
According to the invention, the first signal line is connected with the second contact electrode, the first grounding line is connected with the first contact electrode, and the second grounding line is connected with the third contact electrode; the second signal wire is connected with the fifth contact electrode, the third grounding wire is connected with the fourth contact electrode, and the fourth grounding wire is connected with the sixth contact electrode to form a coplanar waveguide structure.
Further preferably, the width of the first signal line is 30 μm; the space between the first signal wire and the first grounding wire is 10 mu m; the width of the first grounding wire is 150 mu m; the width of the second grounding wire is 150 mu m; the space between the first signal wire and the second grounding wire is 10 mu m; the width of the second signal line is 30 μm; the width of the third grounding wire is 150 mu m; the interval between the second signal wire and the third grounding wire is 150 mu m; the width of the fourth grounding wire is 150 mu m, and the interval between the second signal wire and the fourth grounding wire is 10 mu m; the signal wire and the grounding wire are made of aluminum.
According to the invention, the seventh contact electrode is connected with the first signal line at the lower part and the third signal line at the upper part; the lower part of the eighth contact electrode is connected with a second grounding wire, and the upper part of the eighth contact electrode is connected with a fifth grounding wire; the lower part of the ninth contact electrode is connected with a third grounding wire, and the upper part of the ninth contact electrode is connected with a fourth signal wire; the lower part of the tenth contact electrode is connected with the second signal wire, and the upper part of the tenth contact electrode is connected with the sixth grounding wire to form a coplanar strip line structure.
Further preferably, the seventh contact electrode, the eighth contact electrode, the ninth contact electrode and the tenth contact electrode are made of aluminum; the width of the third signal line is 28 μm; the width of the fifth grounding wire is 28 μm; the space between the third signal line and the fifth grounding line is 25 mu m; the width of the fourth signal line is 28 μm; the sixth ground line width is 28 μm; the interval between the fourth signal line and the sixth grounding line is 25 μm; the signal wire and the grounding wire are made of aluminum.
According to the invention, the window structures are respectively positioned at the left side of the first contact electrode and the right side of the sixth contact electrode, and comprise a through hole and a hollowed-out part, wherein the through hole is in a cuboid shape, the width is 2-5 μm, the hollowed-out part is in a hemispherical window shape, and the diameter is 10-20 μm.
The preparation method of the silicon-based electro-optic modulator traveling wave electrode based on the double-layer transmission line structure comprises the following steps:
(1) Sequentially depositing a silicon dioxide layer and a doped silicon layer on the surface of the substrate, and etching the doped silicon layer to form a left slab layer, a left first heavy doped region, a left first middle doped region, a left first light doped region, a left second middle doped region, a second heavy doped region, a right second middle doped region, a right second light doped region, a right first middle doped region, a right first heavy doped region and a right slab layer;
(2) Injecting P ions and B ions into the first heavily doped region, the left first middle doped region, the left first lightly doped region, the left second middle doped region, the second heavily doped region, the right second middle doped region, the right second lightly doped region, the right first middle doped region and the right first heavily doped region respectively by adopting an ion injection mode;
(3) Depositing silicon dioxide on the surface of the doped silicon layer, coating photoresist on the surface of the silicon dioxide to form a mask, exposing and developing the photoresist, forming 6 blank areas above the left sleb area, the first heavily doped area, the left side of the second heavily doped area and the right side of the second heavily doped area, the right first heavily doped area and the right sleb layer, etching the 6 blank areas to obtain 6 grooves, and removing redundant masks after the groove etching is completed; preparing a first contact electrode, a second contact electrode, a third contact electrode, a fourth contact electrode, a fifth contact electrode and a sixth contact electrode in the 6 grooves by a sputtering deposition method to form a first covering layer;
(4) Depositing silicon dioxide on the first covering layer, and preparing a first signal wire, a first grounding wire, a second signal wire, a third grounding wire and a fourth grounding wire on the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode according to the method of the step (3) to form a first metal layer;
(5) Depositing silicon dioxide on the first metal layer, preparing seventh contact electrodes, eighth contact electrodes, ninth contact electrodes and tenth contact electrodes on the first signal wire, the second ground wire, the third ground wire and the second signal wire according to the method of the step (3), and forming a second covering layer;
(6) Coating photoresist on the second covering layer to form a mask, exposing and developing the photoresist to remove the seventh contact electrode, the eighth contact electrode, the ninth contact electrode and the photoresist above the tenth contact electrode, preparing an aluminum layer on the second covering layer by a sputtering deposition method, and removing the redundant mask to form a third signal wire, a fifth grounding wire, a fourth signal wire and a sixth grounding wire to obtain a traveling wave electrode of the coarse silicon-based electro-optic modulator;
(7) Adopting dry etching to prepare through holes penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer at two sides of the traveling wave electrode of the crude silicon-based electro-optic modulator obtained in the step (6) by adopting dry etching; and then the substrate is hollowed out through wet etching by the through hole to form two window structures, and the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure is obtained.
According to the present invention, the sputter deposition method of step (3) is preferably: the aluminum atoms with kinetic energy are sputtered, and the energy is controlled to enable the aluminum atoms to be deposited at specific positions, so that an electrode is formed.
The invention has the technical characteristics that:
in the invention, a P++ region is formed by the left first heavily doped region and the right first heavily doped region, and the second heavily doped region is an N++ region; a P++ region and an N++ region, which form ohmic contact with the electrode; the left first middle doping region and the first middle doping region form a P+ region, the left second middle doping region and the right second middle doping region form an N+ region, the P+ region and the N+ region, the doping concentration is properly increased, and the light absorption loss is reduced; the left first lightly doped region and the right first lightly doped region form a P region, the left second lightly doped region and the right second lightly doped region form an N region, and a PN junction is formed at the junction of the P region and the N region; and carrying out phase modulation.
The beneficial effects of the invention are as follows:
1. the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure has a window structure, and the substrate is hollowed by forming the through holes, so that the matching degree of the equivalent refractive index of an optical signal and a microwave signal is effectively increased, the loss caused by a base is reduced, and the bandwidth is further improved. And by optimizing the active region to reduce loss, the metal loss reduction can be combined with dielectric loss to further optimize modulator performance.
2. The traveling wave electrode of the silicon-based electro-optic modulator based on the double-layer transmission line structure is prepared by performing metal sputtering deposition twice in the traditional silicon-based electro-optic modulator to form a doped silicon layer, a first covering layer, a first metal layer, a second covering layer and a second metal layer, so that the widths of a signal line and a grounding line in the second metal layer are smaller than those of the signal line and the grounding line in the second metal layer, the advantages of good shielding performance of a proximity effect, a skin effect and a CPW structure can be better utilized, crosstalk among signals is avoided, a substrate is hollowed out, the overlapping area of an optical mode field on a base can be reduced, the second metal layer is connected on the first metal layer through a via hole, the flow area of current on a metal surface layer can be increased to reduce loss, the bandwidth is improved, and more data are transmitted
3. The preparation method provided by the invention is simple to operate, low in cost and suitable for industrial use and popularization.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a traveling wave electrode of a silicon-based electro-optic modulator of the present invention.
Fig. 2 is a schematic diagram of 6 grooves in embodiment 1 of the present invention.
FIG. 3 is a schematic diagram of a traveling wave electrode top view of a silicon-based electro-optic modulator of the present invention.
1. A substrate, 2, a silicon dioxide layer, 3, a doped silicon layer, 4, a first cladding layer, 5, a first metal layer, 6, a second cladding layer, 7, a second metal layer, 1041, a left window, 1042, a right window, 3008, a left sleb region, 3009, a left first heavily doped region, 3010, a left first middle doped region, 3011, a left first lightly doped region, 3012, a left second lightly doped region, 3013, a left second middle doped region, 3014, a second heavily doped region, 3015, a right second middle doped region, 3016, a right second lightly doped region, 3017, a right first lightly doped region, 3018, a right first middle doped region, 3019, a right first heavily doped region, 3020, a right sleb region, 4021, a first contact electrode, 4022, a second contact electrode, 4023, a third contact electrode, 4024, a fourth contact electrode, 4025, a fifth contact electrode, 4026, a sixth contact electrode, a first ground line, a third ground line, 5028, a fourth ground line, 5029, a fifth ground line, a fourth ground line, 7035, a fourth ground line 7035, a transition electrode, a 7035, a fourth ground line 7035, a third ground line 7040, a transition electrode, a 7035, a signal contact electrode, a 7035, a third ground line 7040, a transition electrode, a 7040; 7047. a fifth transition region, 7048, a sixth transition region, 7049, a seventh transition region, 7050, an eighth transition region, 7051, a first input region, 7052, a second input region, 7053, a third input region, 7054, a fourth input region, 7055, a first output region, 7056, a second output region, 7057, a third output region, 7058, a fourth output region.
Detailed Description
The technical scheme, implementation process and principle of the invention are further explained below with reference to the attached drawings.
Example 1
As shown in fig. 1-2, a traveling wave electrode of a silicon-based electro-optic modulator based on a double-layer transmission line structure, wherein the traveling wave electrode comprises a substrate 1, a silicon dioxide layer 2, a doped silicon layer 3, a first covering layer 4, a first metal layer 5, a second covering layer 6 and a second metal layer 7 which are sequentially arranged from bottom to top; the materials of the first cover layer 4, the second cover layer 6, the first metal layer 5 and the second metal layer 7 are all silicon dioxide.
The doped silicon layer 3 is sequentially a left slab region 3008, a left first heavily doped region 3009, a left first middle doped region 3010, a left first lightly doped region 3011, a left second lightly doped region 3012, a left second middle doped region 3013, a second heavily doped region 3014, a right second middle doped region 3015, a right second lightly doped region 3016, a right first lightly doped region 3017, a right first middle doped region 3018, a right first heavily doped region 3019 and a right slab region 3020 from left to right;
the first cover layer 4 is provided with a first contact electrode 4021, a second contact electrode 4022, a third contact electrode 4023, a fourth contact electrode 4024, a fifth contact electrode 4025, and a sixth contact electrode 4026; the first contact electrode 4021, the second contact electrode 4022, the third contact electrode 4023, the fourth contact electrode 4024, the fifth contact electrode 4025 and the sixth contact electrode 4026 penetrate the first cover layer 4; the first contact electrode 4021 is located above the left slab region 3008, the second contact electrode 4022 is located above the left first heavily doped region 3009, the third contact electrode 4023 and the fourth contact electrode 4024 are both located above the second heavily doped region 3014, the fifth contact electrode 4025 is located above the right first heavily doped region 3019, and the sixth contact electrode 4026 is located above the right slab layer 3020;
the first metal layer 5 is provided with a first signal line 5028, a first ground line 5027, a second ground line 5029, a second signal line 5031, a third ground line 5030 and a fourth ground line 5032; the first signal line 5028 is connected to the second contact electrode 4022, the first ground line 2027 is connected to the first contact electrode 4021, and the second ground line 5029 is connected to the third contact electrode 4023; the second signal line 5031 is connected to the fifth contact electrode 4025, the third ground line 5030 is connected to the fourth contact electrode 4024, and the fourth ground line 5032 is connected to the sixth contact electrode 4026 to form a coplanar waveguide structure; the width of the first signal line 5028 is 30 μm; the width of the first ground line 5027 is 150 μm; the width of the second ground line 5029 is 150 μm; the width of the second signal line 5031 is 30 μm; the width of the third ground line 5030 is 150 μm; the width of the fourth ground line 5032 is 150 μm. The first signal line 5028 and the first ground line 5027 have a pitch of 10 μm; the first signal line 5028 and the second ground line 5029 have a pitch of 10 μm; the spacing between the second signal line 5031 and the third ground line 5030 is 150 μm; the second signal line 5031 and the fourth ground line 5032 have a pitch of 10 μm.
The second cover layer 6 is provided with a seventh contact electrode 6033, an eighth contact electrode 6034, a ninth contact electrode 6035, and a tenth contact electrode 6036; the second metal layer 7 includes a third signal line 7037, a fifth ground line 7038, a fourth signal line 7039, and a sixth ground line 7040.
The seventh contact electrode 6033 is connected to the first signal line 5028 at the lower side and to the third signal line 7097 at the upper side; the lower part of the eighth contact electrode 6034 is connected with a second grounding wire 5029, and the upper part is connected with a fifth grounding wire 7038; the ninth contact electrode 6035 is connected to the third ground line 5030 at the lower side and to the fourth signal line 7039 at the upper side; the tenth contact electrode 6036 is connected to the second signal line 5031 at the lower side and to the sixth ground line 7040 at the upper side, thereby forming a coplanar stripline structure. The width of the third signal line 7037 is 28 μm; the width of the fifth ground line 7038 is 28 μm; the width of the fourth signal line 7039 is 28 μm; the width of the sixth ground line 7040 is 28 μm. The space between the third signal line 7037 and the fifth ground line 7038 is 25 μm; the interval between the fourth signal line 7039 and the sixth ground line 7040 is 25 μm.
The traveling wave electrode of the silicon-based electro-optical modulator based on the dual-layer transmission line structure is further provided with a left window 1041 positioned at the left side of the first contact electrode 4021 and a right window 1042 positioned at the right side of the sixth contact electrode 4026, wherein the windows comprise a through hole and a hollowed-out portion, the through hole is rectangular, the width is 3 μm, the hollowed-out portion is hemispherical, and the diameters of the left window 1041 and the right window 1042 are 15 μm. Through the substrate 1, the silicon dioxide layer 2, the doped silicon layer 3, the first capping layer 4, the first metal layer 5, the second capping layer 6 and the second metal layer 7.
The substrate 1 is an SOI substrate.
The carriers doped in the left first heavily doped region 3009, the left first middle doped region 3010, the left first lightly doped region 3011, the right first lightly doped region 3017, the right first middle doped region 3018 and the right first heavily doped region 3019 are P ions; the doping concentration of the left first heavily doped region 3009 and the right first heavily doped region 3019 is 1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the left first middle doping region 3010 and the right first middle doping region 3018 is 1×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the left first lightly doped region 3011 and the right first lightly doped region 3017 is 5×10 17 Atoms/cm 3 。
The carriers doped in the left second lightly doped region 3012, the left second middle doped region 3013, the second heavily doped region 3014, the right second middle doped region 3015 and the right second lightly doped region 3016 are B ions; the second heavily doped region 3014 has a doping concentration of 1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the left second middle doping region 3013 and the right second middle doping region 3015 is 1×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the left and right second lightly doped regions 3012 and 3016 is 3×10 17 Atoms/cm 3 。
The materials of the first contact electrode 4021, the second contact electrode 4022, the third contact electrode 4023, the fourth contact electrode 4024, the fifth contact electrode 4025, the sixth contact electrode 4026, the seventh contact electrode 6033, the eighth contact electrode 6034, the ninth contact electrode 6035, the tenth contact electrode 6036, the first signal line 5028, the first ground line 5027, the second ground line 5029, the second signal line 5031, the third ground line 5030, the fourth ground line 5032, the third signal line 7037, the fifth ground line 7038, the fourth signal line 7039, and the sixth ground line 7040 are all aluminum.
As shown in fig. 3, in the traveling wave electrode of the silicon-based electro-optical modulator based on the dual-layer transmission line structure of this embodiment, the third signal line 7037 has two ends of a first input region 7051 and a first output region 7055, the fifth ground line 7038 has two ends of a second input region 7052 and a second output region 7056, the fourth signal line 7039 has two ends of a third input region 7053 and a third output region 7057, and the sixth ground line 7040 has two ends of a fourth input region 7054 and a fourth output region 7058. The third signal line 7037 is connected to the first input region 7051 in a first transition region 7043, the fifth ground line 7038 is connected to the second input region 7052 in a second transition region 7044, the fourth signal line 7039 is connected to the third input region 7053 in a third transition region 7045, the sixth ground line 7040 is connected to the fourth input region 7054 in a fourth transition region 7046, the third signal line 7037 is connected to the first output region 7055 in a fifth transition region 7047, the fifth ground line 7038 is connected to the second output region 7056 in a sixth transition region 7048, the fourth signal line 7039 is connected to the third output region 7057 in a seventh transition region 7049, and the sixth ground line 7040 is connected to the fourth output region 7058 in an eighth transition region 7050.
Through the input area, the output area and the transition area, the silicon-based electro-optical modulator traveling wave electrode based on the double-layer transmission line structure has the advantages of large bandwidth, high transmission rate and small loss.
The preparation method of the silicon-based electro-optic modulator traveling wave electrode based on the double-layer transmission line structure comprises the following steps:
(1) Sequentially depositing a silicon dioxide layer and a doped silicon layer on the surface of the substrate, and etching the doped silicon layer into a left slab layer, a left first heavy doped region, a left first middle doped region, a left first light doped region, a left second middle doped region, a second heavy doped region, a right second middle doped region, a right second light doped region, a right first middle doped region, a right first heavy doped region and a right slab layer by a photoetching method;
(2) P ions and B ions are respectively injected into the first heavily doped region, the left first middle doped region, the left first lightly doped region, the left second middle doped region, the second heavily doped region, the right second middle doped region, the right second lightly doped region, the right first middle doped region and the right first heavily doped region by adopting an ion injection mode;
(3) Depositing silicon dioxide on the surface of the doped silicon layer, coating photoresist on the surface of the silicon dioxide to form a mask, exposing and developing the photoresist, forming 6 blank areas above the left sleb area, the first heavily doped area, the left side of the second heavily doped area and the right side of the second heavily doped area, the right first heavily doped area and the right sleb layer, and etching the 6 blank areas to obtain 6 grooves, wherein the redundant mask is removed after the groove etching is finished as shown in figure 2; preparing a first contact electrode, a second contact electrode, a third contact electrode, a fourth contact electrode, a fifth contact electrode and a sixth contact electrode in the 6 grooves by a sputtering deposition method to form a first covering layer;
(4) Depositing silicon dioxide on the first covering layer, coating photoresist on the surface of the silicon dioxide to form a mask, exposing and developing the photoresist, forming 4 blank areas above the first contact electrode, the second contact electrode, the third contact electrode and the fourth contact electrode, etching the 4 blank areas to obtain 4 grooves, and removing redundant masks after the groove etching is completed; preparing a first signal wire, a first grounding wire, a second signal wire, a third grounding wire and a fourth grounding wire in the 4 grooves by a sputtering deposition method to form a first metal layer;
(5) Depositing silicon dioxide on the first metal layer, coating photoresist on the surface of the silicon dioxide to form a mask, exposing and developing the photoresist, forming 4 blank areas above the first signal line, the second grounding line, the third grounding line and the second signal line, etching the 4 blank areas to obtain 4 grooves, and removing redundant masks after the groove etching is completed; preparing a seventh contact electrode, an eighth contact electrode, a ninth contact electrode and a tenth contact electrode in the 4 grooves by a sputtering deposition method, and forming a second cover layer;
(6) Coating photoresist on the second covering layer to form a mask, exposing and developing the photoresist to remove the seventh contact electrode, the eighth contact electrode, the ninth contact electrode and the photoresist above the tenth contact electrode, preparing an aluminum layer on the second covering layer by a sputtering deposition method, and removing the redundant mask to form a third signal wire, a fifth grounding wire, a fourth signal wire and a sixth grounding wire to obtain a traveling wave electrode of the coarse silicon-based electro-optic modulator;
(7) Adopting dry etching to prepare through holes penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer at two sides of the traveling wave electrode of the crude silicon-based electro-optic modulator obtained in the step (6) by adopting dry etching; and then the substrate is hollowed out through wet etching by the through hole to form two window structures, and the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure is obtained.
Example 2
A traveling wave electrode of a silicon-based electro-optic modulator based on a double-layer transmission line structure is disclosed in embodiment 1, wherein the first heavily doped region has a doping concentration of 2×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first middle doped region is 2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first lightly doped region is 6×10 17 Atoms/cm 3 . The doping concentration of the second heavily doped region is 2×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second middle doped region is 2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second lightly doped region is 5×10 17 Atoms/cm 3 。
Example 3
A traveling wave electrode for a silicon-based electro-optical modulator based on a double-layer transmission line structure is as described in embodiment 1, except that the width of the through-hole is 2 μm, and the diameters of the left window 1041 and the right window 1042 are 10 μm.
Example 4
The traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure is as described in embodiment 1, except that the width of the through hole is 5 μm, and the diameters of the left window 1041 and the right window 1042 are 20 μm.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (9)
1. The traveling wave electrode of the silicon-based electro-optic modulator based on the double-layer transmission line structure is characterized by comprising a substrate, a silicon dioxide layer, a doped silicon layer, a first covering layer, a first metal layer, a second covering layer and a second metal layer which are sequentially arranged from bottom to top;
the doped silicon layer sequentially comprises a left slab region, a left first heavy doped region, a left first middle doped region, a left first light doped region, a left second middle doped region, a second heavy doped region, a right second middle doped region, a right second light doped region, a right first middle doped region, a right first heavy doped region and a right slab region from left to right;
the carriers doped in the first heavily doped region, the first middle doped region and the first lightly doped region are P ions; the doping concentration of the first heavily doped region is 2×10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 ；
The carriers doped in the second heavily doped region, the second middle doped region and the second lightly doped region are B ions; the doping concentration of the second heavily doped region is 2×10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 ；
The first covering layer is provided with a first contact electrode, a second contact electrode, a third contact electrode, a fourth contact electrode, a fifth contact electrode and a sixth contact electrode;
the first metal layer is provided with a first signal wire, a first grounding wire, a second signal wire, a third grounding wire and a fourth grounding wire;
the second covering layer is provided with a seventh contact electrode, an eighth contact electrode, a ninth contact electrode and a tenth contact electrode;
the second metal layer is provided with a third signal wire, a fifth grounding wire, a fourth signal wire and a sixth grounding wire;
the two sides of the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure are also provided with window structures penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer.
2. The traveling wave electrode of the silicon-based electro-optic modulator based on the double-layer transmission line structure as claimed in claim 1, wherein the substrate is an SOI substrate; the first cover layer, the second cover layer and the first metal layer are made of silicon dioxide.
3. The traveling wave electrode for a silicon-based electro-optic modulator based on a dual-layer transmission line structure as claimed in claim 1, wherein the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode penetrate through the first cover layer; the first contact electrode is positioned above the left slab region, the second contact electrode is positioned above the left first heavily doped region, the third contact electrode and the fourth contact electrode are both positioned above the second heavily doped region, the fifth contact electrode is positioned above the right first heavily doped region, and the sixth contact electrode is positioned above the right slab layer; the materials of the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode are aluminum.
4. The traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure as claimed in claim 1, wherein the first signal line is connected with the second contact electrode, the first grounding line is connected with the first contact electrode, and the second grounding line is connected with the third contact electrode; the second signal wire is connected with the fifth contact electrode, the third grounding wire is connected with the fourth contact electrode, and the fourth grounding wire is connected with the sixth contact electrode to form a coplanar waveguide structure.
5. The traveling wave electrode for a silicon-based electro-optic modulator based on a dual-layer transmission line structure as claimed in claim 1, wherein the width of the first signal line is 30 μm; the width of the first grounding wire is 150 mu m; the width of the second grounding wire is 150 mu m; the width of the second signal line is 30 μm; the width of the third grounding wire is 150 mu m; the width of the fourth grounding wire is 150 mu m, and the signal wire and the grounding wire are made of aluminum;
the space between the first signal wire and the first grounding wire is 10 mu m; the space between the first signal wire and the second grounding wire is 10 mu m; the interval between the second signal wire and the third grounding wire is 150 mu m; the spacing between the second signal line and the fourth ground line is 10 μm.
6. The traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure as claimed in claim 1, wherein the lower part of the seventh contact electrode is connected with the first signal line, and the upper part is connected with the third signal line; the lower part of the eighth contact electrode is connected with a second grounding wire, and the upper part of the eighth contact electrode is connected with a fifth grounding wire; the lower part of the ninth contact electrode is connected with a third grounding wire, and the upper part of the ninth contact electrode is connected with a fourth signal wire; the lower part of the tenth contact electrode is connected with the second signal wire, and the upper part of the tenth contact electrode is connected with the sixth grounding wire to form a coplanar strip line structure.
7. The traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure as claimed in claim 1, wherein the seventh contact electrode, the eighth contact electrode, the ninth contact electrode and the tenth contact electrode are made of aluminum; the width of the third signal line is 28 μm; the width of the fifth grounding wire is 28 μm; the width of the fourth signal line is 28 μm; the sixth ground line width is 28 μm; the signal wire and the grounding wire are made of aluminum;
the space between the third signal line and the fifth grounding line is 25 mu m, and the space between the fourth signal line and the sixth grounding line is 25 mu m.
8. The traveling wave electrode of a silicon-based electro-optical modulator based on a double-layer transmission line structure as claimed in claim 1, wherein the window structure is respectively positioned at the left side of the first contact electrode and the right side of the sixth contact electrode, and comprises a through hole and a hollowed-out part, the through hole is in a cuboid shape, the width is 2-5 μm, the hollowed-out part is in a hemispherical shape, and the diameter is 10-20 μm.
9. The method for preparing the traveling wave electrode of the silicon-based electro-optic modulator based on the double-layer transmission line structure as claimed in any one of claims 1 to 8, which is characterized by comprising the following steps:
(1) Sequentially depositing a silicon dioxide layer and a doped silicon layer on the surface of the substrate, and etching the doped silicon layer to form a left slab layer, a left first heavy doped region, a left first middle doped region, a left first light doped region, a left second middle doped region, a second heavy doped region, a right second middle doped region, a right second light doped region, a right first middle doped region, a right first heavy doped region and a right slab layer;
(2) Injecting P ions and B ions into the first heavily doped region, the left first middle doped region, the left first lightly doped region, the left second middle doped region, the second heavily doped region, the right second middle doped region, the right second lightly doped region, the right first middle doped region and the right first heavily doped region respectively by adopting an ion injection mode;
the carriers doped in the first heavily doped region, the first middle doped region and the first lightly doped region are P ions; the doping concentration of the first heavily doped region is 2×10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the first lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 ；
The carriers doped in the second heavily doped region, the second middle doped region and the second lightly doped region are B ions; the doping concentration of the second heavily doped region is 2×10 19 ~1×10 20 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second middle doped region is 2×10 17 ~2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the second lightly doped region is 2×10 17 ~1×10 18 Atoms/cm 3 ；
(3) Depositing silicon dioxide on the surface of the doped silicon layer, coating photoresist on the surface of the silicon dioxide to form a mask, exposing and developing the photoresist, forming 6 blank areas above the left sleb area, the first heavily doped area, the left side of the second heavily doped area and the right side of the second heavily doped area, the right first heavily doped area and the right sleb layer, etching the 6 blank areas to obtain 6 grooves, and removing redundant masks after the groove etching is completed; preparing a first contact electrode, a second contact electrode, a third contact electrode, a fourth contact electrode, a fifth contact electrode and a sixth contact electrode in the 6 grooves by a sputtering deposition method to form a first covering layer;
(4) Depositing silicon dioxide on the first covering layer, and preparing a first signal wire, a first grounding wire, a second signal wire, a third grounding wire and a fourth grounding wire on the first contact electrode, the second contact electrode, the third contact electrode, the fourth contact electrode, the fifth contact electrode and the sixth contact electrode according to the method of the step (3) to form a first metal layer;
(5) Depositing silicon dioxide on the first metal layer, preparing seventh contact electrodes, eighth contact electrodes, ninth contact electrodes and tenth contact electrodes on the first signal wire, the second ground wire, the third ground wire and the second signal wire according to the method of the step (3), and forming a second covering layer;
(6) Coating photoresist on the second covering layer to form a mask, exposing and developing the photoresist to remove the seventh contact electrode, the eighth contact electrode, the ninth contact electrode and the photoresist above the tenth contact electrode, preparing an aluminum layer on the second covering layer by a sputtering deposition method, and removing the redundant mask to form a third signal wire, a fifth grounding wire, a fourth signal wire and a sixth grounding wire to obtain a traveling wave electrode of the coarse silicon-based electro-optic modulator;
(7) Adopting dry etching to prepare through holes penetrating through the substrate, the silicon dioxide layer, the doped silicon layer, the first covering layer, the first metal layer, the second covering layer and the second metal layer at two sides of the traveling wave electrode of the crude silicon-based electro-optic modulator obtained in the step (6) by adopting dry etching; and then the substrate is hollowed out through wet etching by the through hole to form two window structures, and the traveling wave electrode of the silicon-based electro-optical modulator based on the double-layer transmission line structure is obtained.
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