CN113551815A - Pressure sensor chip, high-pressure-resistant pressure sensor and manufacturing method thereof - Google Patents
Pressure sensor chip, high-pressure-resistant pressure sensor and manufacturing method thereof Download PDFInfo
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- CN113551815A CN113551815A CN202110686445.XA CN202110686445A CN113551815A CN 113551815 A CN113551815 A CN 113551815A CN 202110686445 A CN202110686445 A CN 202110686445A CN 113551815 A CN113551815 A CN 113551815A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Abstract
The invention discloses a pressure sensor chip, a high-pressure-resistant pressure sensor and a manufacturing method thereof. The pressure sensor chip comprises a glass substrate, a bonding pad assembly and a silicon pressure strain gauge. The pad assembly is disposed on the glass substrate and includes a first pad and a second pad. The two silicon pressure strain gauges are both arranged on the glass substrate and are respectively positioned on two sides of the welding disc component. The silicon pressure strain gauge comprises a silicon strain gauge and a P-type piezoresistive gauge. A plurality of P-type piezoresistance sheets are arranged on the silicon strain sheet side by side. The same ends of two adjacent P-type piezoresistive sheets are electrically connected, so that the P-type piezoresistive sheets are sequentially connected in series. The two silicon pressure strain gauges are connected in series through the first bonding pad, and signal wires are led out through the two second bonding pads respectively. The invention improves the high-voltage resistance of the pressure sensor by utilizing the high-voltage resistance characteristic of the glass and the stability of the glass bonded with silicon.
Description
Technical Field
The invention belongs to pressure detection equipment in a severe environment, and particularly relates to a design and manufacturing method of a pressure sensor which is high-voltage resistant and not easy to break down in a high-voltage working environment.
Background
In recent years, the demand for pressure sensors resistant to high voltage electricity has increased greatly in industrial climate control systems or heating, ventilating and air conditioning systems. Conventional pressure switches in these systems have low accuracy and have been replaced with pressure sensors for safety and monitoring devices such as air filters, fan heaters, cooling circuits, and fire barriers for protecting equipment, however, existing pressure sensors have high breakdown voltages and complicated packaging structures, thereby reducing the sensitivity of the pressure sensors. Therefore, a silicon strain pressure sensor using a high dielectric strength glass substrate as a substrate and a packaging method thereof are provided, and the problem of pressure sensing in a high-voltage environment is solved.
Disclosure of Invention
The invention aims to design a high-sensitivity pressure sensor which stably works in a high-voltage environment, and a packaging method and a manufacturing process thereof.
In a first aspect, the present invention provides a pressure sensor chip comprising a glass substrate, a bond pad assembly, and a silicon pressure strain gauge. The pad assembly is disposed on the glass substrate and includes a first pad and a second pad. The two silicon pressure strain gauges are both arranged on the glass substrate and are respectively positioned on two sides of the welding disc component. The silicon pressure strain gauge comprises a silicon strain gauge and a P-type piezoresistive gauge. A plurality of P-type piezoresistance sheets are arranged on the silicon strain sheet side by side. The same ends of two adjacent P-type piezoresistive sheets are electrically connected, so that the P-type piezoresistive sheets are sequentially connected in series. The two silicon pressure strain gauges are connected in series through the first bonding pad, and signal wires are led out through the two second bonding pads respectively.
Preferably, the glass substrate is rectangular and has a thickness of 50 μm.
Preferably, the first pad is T-shaped and includes a lateral portion and a longitudinal portion. One end of the longitudinal part is connected with the middle position of the transverse part. The second bonding pad is rectangular. The two second pads are respectively arranged on two sides of the longitudinal part.
Preferably, the outer ends of the two silicon strain gauges at the end part are respectively used as a leading-out terminal and a connecting terminal. The connection terminal is adjacent to the first pad. The leading-out ends are close to the corresponding second bonding pads. The connecting ends of the two silicon pressure strain gauges are respectively connected with the two ends of the transverse part of the first bonding pad. The leading-out ends of the two silicon pressure strain gauges are respectively connected with the two second bonding pads.
Preferably, the same ends of two adjacent P-type piezoresistive sheets are connected through an aluminum strip.
In a second aspect, the invention provides a high pressure resistant pressure sensor, which includes the aforementioned pressure sensor chip, a housing, a connecting frame, a spacer, a circuit board, silicone gel, a supporting frame, and a pressure rod. The shell is provided with a pressure hole. The connecting frame is fixed on the shell and is provided with a central through hole aligned with the pressure hole. The spacing block is arranged on the inner side of the connecting frame and is connected with the shell in a sliding mode. And a pressure sensor chip and silica gel are arranged on one side of the spacer block away from the connecting frame. The silicon gel wraps the pressure sensor chip. The support frame is fixed at the end part of the inner cavity of the shell and props against the outer side surface of the silica gel.
The circuit board is fixed in the shell. The two second bonding pads are respectively led out to the circuit board through connecting wires. And a signal output line of the circuit board is connected with an output interface on the shell. The pressure rod passes through the central through hole of the connecting frame and abuts against the spacer block.
Preferably, the high pressure resistant pressure sensor further comprises a PCB fixing case. The cylindrical PCB fixing shell is coaxially fixed in the inner cavity of the shell and sleeved outside the inner end of the connecting frame. The circuit board is clamped between the step of the inner cavity of the shell and the PCB fixing shell.
Preferably, the connection frame is fixed to an inner side of the PCB fixing case. The connecting frame is provided with a boss extending out of the pressure hole.
Preferably, the housing comprises an upper housing and a lower housing which are coaxially plugged together. The lower shell is in a shape of a rotator with steps, one end of the lower shell is provided with a pressure hole, and the other end of the lower shell is arranged in an open manner. The outer side surface of the upper shell is provided with a projecting and flat line hole. The output interface is disposed in the wire hole.
In a third aspect, the present invention provides a method for manufacturing a pressure sensor chip, which comprises the following steps:
step one, synthesizing a silicon/glass anodic bonding wafer by using alkali-free boroaluminosilicate glass as a substrate and a silicon material.
And step two, cleaning the silicon/glass anodic bonding wafer to form a hydrophilic surface. And thinning the top silicon layer of the bonded wafer to a thickness of 4-6 microns by a chemical mechanical polishing process. A glass substrate is formed.
Depositing the buffer oxide to 50 nm by using a plasma enhanced chemical vapor deposition method; then 3X 1015ions/cm2Of fluorine inAn 80keV implant to cause pre-amorphization of the top silicon layer, and then a 5X 1015ions/cm2Boron is implanted at 50 keV. Annealing treatment was performed at 600 ℃ for two hours after implantation.
And step four, etching the top silicon layer by using a deep reactive ion etching method to form the silicon strain gauge.
And fifthly, depositing a Ti/Al metal layer through sputtering, and patterning the metal layer through a stripping process.
And step six, keeping for 1.5min by using a deep reactive ion etching process again to form a silicon layer with the thickness of 5 microns and form the P-type piezoresistive wafer.
Step seven, depositing 50 nm SiO by plasma enhanced chemical vapor deposition at 350 DEG C2And a passivation layer of 200 nm SiN.
And step eight, continuously etching the passivation layer on the metal bonding pad by using a reactive ion corrosion technology method to realize lead bonding contact and form the bonding pad assembly. And grinding and cutting the pressure sensor chip to obtain the pressure sensor chip.
The invention has the beneficial effects that:
1. the invention provides a pressure sensor using glass as a substrate and a method for manufacturing a strain gauge chip in a monocrystalline silicon thin film combined with a glass substrate by utilizing the high-voltage resistance characteristic of the glass and the stability of the glass after being bonded with silicon, and the high-voltage resistance of the pressure sensor is obviously improved.
2. The silicon gel is wrapped on the outer side of the pressure sensor chip in the high-pressure resistant pressure sensor packaged by the invention, so that the stability of the whole high-pressure resistant pressure sensor in a high-voltage environment is obviously improved.
3. The invention provides a novel manufacturing process of a silicon strain pressure sensor chip with glass as a substrate, and the requirements of high sensitivity, reliability and the like of the chip in sensor application are met.
Drawings
FIG. 1 is a diagram of a pressure sensor chip of the present invention;
FIG. 2 is an internal structural view of the high pressure resistant pressure sensor of the present invention;
FIG. 3 is an exploded view of the high pressure resistant pressure sensor of the present invention;
FIG. 4 is a flow chart of a process for fabricating a pressure sensor die according to the present invention.
Detailed Description
As shown in fig. 1, 2 and 3, the high pressure resistant pressure sensor includes a pressure sensor chip 1, a housing 2, a connecting frame 3, a spacer 4, a PCB fixing case 5, a circuit board 6, an electronic component 6-1, a flexible PCB 7, an output interface 8, a silicone gel 9, a support frame 11 and a pressure rod 12.
The housing 2 is hollow, and a pressure hole is formed in one end of the housing. The pressure port communicates the interior of the housing 2 with the environment. A cylindrical PCB fixing case 5 is coaxially fixed in the inner cavity of the housing 2. The circuit board 6 is clamped between the step of the inner cavity of the shell 2 and the PCB fixing shell 5. The connection frame 3 is fixed inside the PCB fixing case 5. The connecting frame 3 is provided with a boss extending out of the pressure hole and is provided with a central through hole. The spacer 4 is arranged on the inner side of the connecting frame 3 and is connected with the PCB fixing shell 5 in a sliding way. The spacer 4 is mounted on the pressure sensor chip 1 and the silicone gel 9 on the side remote from the connection frame. The silicone gel 9 is hemispherical and covers the pressure sensor chip 1. The support frame 11 is fixed at the end of the inner cavity of the shell 2. The support frame 11 is provided with a concave ball support surface. The concave spherical bearing surface abuts against the outer side surface of the silicone gel 9. The pressure bar 12 passes through the central through hole of the connecting frame 3 and abuts against the spacer 4.
The circuit board 6 is provided with an electronic component 6-1 for processing the output signal of the pressure sensor chip 1. The output signal of the electronic component 6-1 is led out to an output interface 8 on the shell 2 through a flexible PCB 7. When the pressure rod 12 is subjected to an axial pressure, the pressure is transmitted to the silicone gel 9 and the pressure sensor chip 1. The pressure sensor chip 1 outputs a pressure signal when pressurized. After calibration, the pressure applied to the pressure rod 12 can be derived according to the pressure signal output by the pressure sensor chip 1.
The pressure sensor chip 1 includes a glass substrate 1-1, a pad assembly 1-5, and a silicon pressure strain gauge 10. The glass substrate 1-1 has a rectangular shape and a thickness of 50 μm, and functions to support the molded silicon strain gauge 1-2 and provide a high dielectric strength between the silicon strain gauge 1-2 and the spacer 4 to prevent an external high voltage breakdown. The pad assembly 1-5 is mounted at a middle position of the front surface of the glass substrate 1-1 and includes a first pad 1-5-1 and a second pad 1-5-2. The first pad 1-5-1 has a T-shape including a lateral portion and a longitudinal portion. One end of the longitudinal part is connected with the middle position of the transverse part. The second pad 1-5-2 is rectangular. Two second pads 1-5-2 are respectively arranged on two sides of the longitudinal part. The first pad 1-5-1 and the two second pads 1-5-2 are used for electrical connection of the pressure sensor chip 1 to an external packaging structure.
Two silicon pressure strain gauges 10 are mounted on the glass substrate 1-1 and are located on both sides of the pad assembly 1-5, respectively. The silicon pressure strain gauge 10 comprises silicon strain gauges 1-2, P-type piezoresistive gauges 1-3 and thin aluminum strips 1-4. Four P-type piezoresistive wafers 1-3 are arranged on the silicon strain gauge 1-2 side by side. The P-type piezoresistor sheet 1-3 is a P-type piezoresistor made of P-type semiconductor material and has a rectangular shape. The length direction of the P-type piezoresistive sheet 1-3 is parallel to the length direction of the glass substrate 1-1. The same ends of two adjacent P-type piezoresistive sheets 1-3 are connected together through aluminum thin strips 1-4, so that the four P-type piezoresistive sheets 1-3 are sequentially connected in series in a snake shape.
The two second pads 1-5-2 correspond to the two silicon pressure strain gauges 10, respectively. The outer ends of the two silicon strain gauges 1-2 at the end part are respectively used as a leading-out end and a connecting end. The connection terminal is adjacent to the first pad. The leading-out end is close to the corresponding second bonding pad 1-5-2. The connection terminals of the two silicon pressure strain gauges 10 are connected at both ends of the first pad transverse portion, respectively, so that the two silicon pressure strain gauges 10 are connected in series. The leading-out ends of the two silicon pressure strain gauges 10 are respectively connected with the two second bonding pads 1-5-2. The two second bonding pads 1-5-2 are respectively connected to an electronic component 6-1 on the circuit board 6 through lead-out wires 1-8, so that the output of pressure signals is realized.
The housing 2 comprises an upper housing 2-2 and a lower housing 2-1 which are coaxially plugged together. The lower shell 2-1 is in a shape of a rotator with steps, one end of the lower shell is provided with a pressure hole, and the other end of the lower shell is opened. A convex and flat line hole is arranged on the outer side surface of the upper shell 2-2. The connecting frame 3 is used for supporting the fixed spacing block 4 and fixedly connecting the PCB fixed shell 5. The spacer 4 is in a shape of a circular cover and is used for placing and fixing the pressure sensor chip 1. The silicone gel 9 has no bubble inside, and is coated on the pressure sensor chip 1 to protect the silicon strain gauge 1-2 and the lead-out wire 1-8 from high voltage breakdown. One end of the support frame 11 is arc-shaped, the curvature radius of a circular ring of the support frame is the same as the semicircular curvature radius of the silicone gel 9 and is fixedly contacted with the silicone gel 9, and the other end of the support frame is connected with the rack. The circuit board 6 is in a shape of a wafer and is fixed with the PCB fixing plate 5, and a rectangular hole is formed in the middle of the circuit board and used for penetrating through the silica gel 9. The pressure rod 12 is a cylindrical long rod and transmits external pressure to the pressure sensor chip 1. The electronic components 6-1 are welded on the circuit board 6.
The working principle of the high-pressure-resistant pressure sensor is as follows
When external pressure excitation is transmitted to the pressure sensor 1 through the connecting frame 3, the sensor chip 1 is limited by the silicone gel and the supporting frame 11, so that the silicon strain gauge 1-2 in the pressure sensor chip 1 is strained. Because the P-type piezoresistive wafer 1-3 is tightly attached to the silicon strain wafer 1-2, the deformation of the silicon strain wafer 1-2 causes the P-type piezoresistive wafer to deform in a microscale manner, and the resistance value of the P-type piezoresistive wafer changes. Thus, the sensor is a piezoresistive pressure sensor. The silicon strain gauge 1-2 generates strain of different degrees through different pressure inputs, and then the resistance value of the P-type piezoresistive sheet changes correspondingly. After calibration, the external circuit can obtain the pressure of the external input by measuring the resistance value.
The method for manufacturing the pressure sensor chip 1 is as follows:
step one, as shown in part a of fig. 4, a silicon/glass anodic bonding wafer is synthesized using alkali-free boroaluminosilicate glass as a substrate and a silicon material.
Step two, as shown in part a of fig. 4, the silicon/glass anodic bonding wafer is cleaned to remove contaminants and form a hydrophilic surface. Because the substrate is alkali-free boroaluminosilicate glass, the cleaned silicon/glass anodically bonded wafer has a relatively high potential of 1750V at 500 ℃, and the top silicon layer of the bonded wafer is thinned to a final thickness of about 5 μm by a chemical mechanical polishing process. A glass substrate 1-1 is formed.
Step three, as shown in part b of FIG. 4, first using at 350 deg.CPlasma enhanced chemical vapor deposition to deposit the buffer oxide to 50 nm; then 3X 1015ions/cm2Fluorine implantation at 80keV induced pre-amorphization of the top silicon layer, which was then followed by a 5X 10 implantation15ions/cm2Boron is implanted at 50 keV. The energy and dose of the implant is determined by the Stop and Range (SRIM) and ATHENA simulations of ions in the species. Annealing treatment was performed at 600 ℃ for two hours after implantation.
And step four, as shown in part c of fig. 4, etching the top silicon layer by using a deep reactive ion etching method to form the silicon strain gauge 1-2.
And fifthly, depositing a Ti/Al (100nm/800nm) metal layer by sputtering, and patterning the metal layer by a stripping process.
And step six, as shown in part d in fig. 4, the silicon layer with the thickness of 5 microns is formed by keeping the deep reactive ion etching process for 1.5min again, and the silicon layer is used as a silicon piezoresistive material, namely the P-type piezoresistive sheet 1-3.
Step seven, as shown in part e of fig. 4, depositing 50 nm of SiO by plasma enhanced chemical vapor deposition at 350 deg.c2And a passivation layer of 200 nm SiN.
And step eight, as shown in parts f, g and h in fig. 4, continuously etching the passivation layer on the metal bonding pad by using a reactive ion etching technology method to realize wire bonding contact, and forming the bonding pad assemblies 1-5. The fabrication of the strain gauge was completed by back glass grinding and cutting, designed to have a total thickness and size of 50 μm, and then the lattice-shaped wafer was cut to complete the fabrication of the pressure sensor chip 1.
Claims (10)
1. A pressure sensor chip, characterized by: comprises a glass substrate (1-1), a welding disc component (1-5) and a silicon pressure strain gauge (10); the pad assembly (1-5) is arranged on the glass substrate (1-1) and comprises a first pad (1-5-1) and a second pad (1-5-2); the two silicon pressure strain gauges (10) are both arranged on the glass substrate (1-1) and are respectively positioned on two sides of the welding disc assembly (1-5); the silicon pressure strain gauge (10) comprises a silicon strain gauge (1-2) and a P-type piezoresistive gauge (1-3); a plurality of P-type piezoresistive sheets (1-3) are arranged on the silicon strain gauge (1-2) side by side; the same ends of two adjacent P-type piezoresistive sheets (1-3) are electrically connected, so that the P-type piezoresistive sheets (1-3) are sequentially connected in series; two silicon pressure strain gauges (10) are connected in series through a first bonding pad, and signal wires are respectively led out through two second bonding pads (1-5-2).
2. A pressure sensor die according to claim 1, wherein: the glass substrate (1-1) is rectangular and 50 μm thick.
3. A pressure sensor die according to claim 1, wherein: the first bonding pad (1-5-1) is T-shaped and comprises a transverse part and a longitudinal part; one end of the longitudinal part is connected with the middle position of the transverse part; the second bonding pad (1-5-2) is rectangular; two second pads (1-5-2) are respectively arranged on two sides of the longitudinal part.
4. A pressure sensor die according to claim 1, wherein: the outer ends of the two silicon strain gauges (1-2) positioned at the end part are respectively used as a leading-out end and a connecting end; the connecting end is close to the first bonding pad; the leading-out end is close to the corresponding second bonding pad (1-5-2); the connecting ends of the two silicon pressure strain gauges (10) are respectively connected with the two ends of the transverse part of the first bonding pad; the leading-out ends of the two silicon pressure strain gauges (10) are respectively connected with the two second bonding pads (1-5-2).
5. A pressure sensor die according to claim 1, wherein: the same ends of two adjacent P-type piezoresistive sheets (1-3) are connected through an aluminum strip.
6. A high-pressure-resistant pressure sensor comprises a shell (2), a connecting frame (3), a spacer block (4), a circuit board (6), a supporting frame (11) and a pressure rod (12); the method is characterized in that: further comprising a silicone gel (9) and a pressure sensor chip (1) according to claim 1; the shell (2) is provided with a pressure hole; the connecting frame (3) is fixed on the shell (2) and is provided with a central through hole aligned with the pressure hole; the spacing block (4) is arranged on the inner side of the connecting frame (3) and is connected with the shell (2) in a sliding way; one side of the spacer block (4) far away from the connecting frame is provided with a pressure sensor chip (1) and silica gel (9); the silicon gel (9) wraps the pressure sensor chip (1); the support frame (11) is fixed at the end part of the inner cavity of the shell (2) and props against the outer side surface of the silica gel (9);
the circuit board (6) is fixed in the shell (2); the two second bonding pads (1-5-2) are respectively led out to the circuit board (6) through connecting wires (1-8); the signal output line of the circuit board (6) is connected with an output interface (8) on the shell (2); the pressure rod (12) passes through the central through hole of the connecting frame (3) and props against the spacing block (4).
7. A high pressure tolerant pressure sensor as claimed in claim 6 wherein: the PCB fixing shell (5) is further included; the cylindrical PCB fixing shell (5) is coaxially fixed in the inner cavity of the shell (2) and sleeved outside the inner end of the connecting frame (3); the circuit board (6) is clamped between the step of the inner cavity of the shell (2) and the PCB fixing shell (5).
8. A high pressure tolerant pressure sensor as claimed in claim 6 wherein: the connecting frame (3) is fixed on the inner side of the PCB fixing shell (5); a lug boss extending out of the pressure hole is arranged on the connecting frame (3).
9. A high pressure tolerant pressure sensor as claimed in claim 6 wherein: the shell (2) comprises an upper shell (2-2) and a lower shell (2-1) which are coaxially spliced together; the lower shell (2-1) is in a shape of a rotator with steps, one end of the lower shell is provided with a pressure hole, and the other end of the lower shell is opened; a convex and flat line hole is formed in the outer side surface of the upper shell (2-2); an output interface (8) is arranged in the wire hole.
10. The method of manufacturing a pressure sensor die of claim 1, wherein: step one, synthesizing a silicon/glass anodic bonding wafer by using alkali-free boroaluminosilicate glass as a substrate and a silicon material;
cleaning the silicon/glass anodic bonding wafer to form a hydrophilic surface; thinning the top silicon layer of the bonded wafer to a thickness of 4-6 μm by a chemical mechanical polishing process; forming a glass substrate (1-1);
depositing the buffer oxide to 50 nm by using a plasma enhanced chemical vapor deposition method; then 3X 1015ions/cm2Fluorine implantation at 80keV induced pre-amorphization of the top silicon layer, which was then followed by a 5X 10 implantation15ions/cm2Boron is implanted at 50 keV; annealing treatment is carried out for two hours at 600 ℃ after injection;
etching the top silicon layer by using a deep reactive ion etching method to form a silicon strain gauge (1-2);
depositing a Ti/Al metal layer by sputtering, and patterning the metal layer by a stripping process;
sixthly, keeping for 1.5min by using a deep reactive ion etching process again to form a silicon layer with the thickness of 5 microns and form a P-type piezoresistive wafer (1-3);
step seven, depositing 50 nm SiO by plasma enhanced chemical vapor deposition at 350 DEG C2And a passivation layer of 200 nm SiN;
step eight, continuously etching the passivation layer on the metal bonding pad by using a reactive ion corrosion technology method to realize lead bonding contact and form a bonding pad assembly (1-5); and grinding and cutting the pressure sensor chip to obtain the pressure sensor chip.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216603A (en) * | 2022-02-21 | 2022-03-22 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN116558704A (en) * | 2023-07-06 | 2023-08-08 | 中汇瑞德传感科技(苏州)有限公司 | Pressure sensor and hydraulic brake system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264075A (en) * | 1992-11-06 | 1993-11-23 | Ford Motor Company | Fabrication methods for silicon/glass capacitive absolute pressure sensors |
| JPH10325772A (en) * | 1997-05-27 | 1998-12-08 | Nissan Motor Co Ltd | Semiconductor pressure sensor and its manufacture |
| US20060213275A1 (en) * | 2005-03-23 | 2006-09-28 | Honeywell International Inc | Micro-machined pressure sensor with polymer diaphragm |
| CN104634487A (en) * | 2015-02-16 | 2015-05-20 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical Systems) pressure sensor and formation method thereof |
| CN106468604A (en) * | 2016-09-29 | 2017-03-01 | 苏州工业园区纳米产业技术研究院有限公司 | High-temp pressure sensor and preparation method thereof |
| CN109738098A (en) * | 2018-12-29 | 2019-05-10 | 菲比蓝科技(深圳)有限公司 | Pressure sensor and forming method thereof |
| KR20190104705A (en) * | 2018-03-02 | 2019-09-11 | 주식회사 오토닉스 | Silicon strain gage with high sensitivity and pressure transducer comprising the same |
| WO2020209397A1 (en) * | 2019-04-08 | 2020-10-15 | 주식회사 오토닉스 | Silicon strain gauge having high sensitivity and pressure transducer comprising same |
-
2021
- 2021-06-21 CN CN202110686445.XA patent/CN113551815B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264075A (en) * | 1992-11-06 | 1993-11-23 | Ford Motor Company | Fabrication methods for silicon/glass capacitive absolute pressure sensors |
| JPH10325772A (en) * | 1997-05-27 | 1998-12-08 | Nissan Motor Co Ltd | Semiconductor pressure sensor and its manufacture |
| US20060213275A1 (en) * | 2005-03-23 | 2006-09-28 | Honeywell International Inc | Micro-machined pressure sensor with polymer diaphragm |
| CN104634487A (en) * | 2015-02-16 | 2015-05-20 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical Systems) pressure sensor and formation method thereof |
| CN106468604A (en) * | 2016-09-29 | 2017-03-01 | 苏州工业园区纳米产业技术研究院有限公司 | High-temp pressure sensor and preparation method thereof |
| KR20190104705A (en) * | 2018-03-02 | 2019-09-11 | 주식회사 오토닉스 | Silicon strain gage with high sensitivity and pressure transducer comprising the same |
| CN109738098A (en) * | 2018-12-29 | 2019-05-10 | 菲比蓝科技(深圳)有限公司 | Pressure sensor and forming method thereof |
| WO2020209397A1 (en) * | 2019-04-08 | 2020-10-15 | 주식회사 오토닉스 | Silicon strain gauge having high sensitivity and pressure transducer comprising same |
Non-Patent Citations (3)
| Title |
|---|
| YEONJU KIMYEPU CUISUNGJOON LIM: "Additively manufactured electromagnetic based planar pressure sensor using substrate integrated waveguide technology", 《ADDITIVE MANUFACTURING》 * |
| 古铖: "新型压力传感器件及基于薄膜晶体管集成的研究", 《全国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 郭成锐等: "压阻式MEMS压力传感器的原理与分析" * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114216603A (en) * | 2022-02-21 | 2022-03-22 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN114216603B (en) * | 2022-02-21 | 2022-05-24 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN116558704A (en) * | 2023-07-06 | 2023-08-08 | 中汇瑞德传感科技(苏州)有限公司 | Pressure sensor and hydraulic brake system |
| CN116558704B (en) * | 2023-07-06 | 2023-10-10 | 中汇瑞德传感科技(苏州)有限公司 | Pressure sensor and hydraulic brake system |
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| CN113551815B (en) | 2023-02-24 |
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