CN113548872A - IWO target material and preparation method and application thereof - Google Patents
IWO target material and preparation method and application thereof Download PDFInfo
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- CN113548872A CN113548872A CN202110805830.1A CN202110805830A CN113548872A CN 113548872 A CN113548872 A CN 113548872A CN 202110805830 A CN202110805830 A CN 202110805830A CN 113548872 A CN113548872 A CN 113548872A
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- iwo
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- indium
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- 239000013077 target material Substances 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 21
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 11
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 64
- 229910052760 oxygen Inorganic materials 0.000 claims description 64
- 239000001301 oxygen Substances 0.000 claims description 64
- 239000000843 powder Substances 0.000 claims description 64
- 238000002156 mixing Methods 0.000 claims description 35
- 238000003825 pressing Methods 0.000 claims description 31
- 239000010936 titanium Substances 0.000 claims description 28
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 25
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 9
- 239000007790 solid phase Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000000975 co-precipitation Methods 0.000 claims description 4
- 238000009694 cold isostatic pressing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000002834 transmittance Methods 0.000 abstract description 35
- 230000001976 improved effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 230000024121 nodulation Effects 0.000 abstract description 4
- 239000007888 film coating Substances 0.000 abstract description 3
- 238000009501 film coating Methods 0.000 abstract description 3
- 231100000572 poisoning Toxicity 0.000 abstract description 3
- 230000000607 poisoning effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 35
- 238000001755 magnetron sputter deposition Methods 0.000 description 30
- 238000005240 physical vapour deposition Methods 0.000 description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 16
- 239000004408 titanium dioxide Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 6
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 6
- 238000000498 ball milling Methods 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 238000004108 freeze drying Methods 0.000 description 5
- -1 indium-tungsten-hafnium oxide Chemical compound 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- UMIFODCKIGRMNI-UHFFFAOYSA-N [O-2].[In+3].[W+4].[Zr+4] Chemical compound [O-2].[In+3].[W+4].[Zr+4] UMIFODCKIGRMNI-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- SBLMSJMKLGAHLV-UHFFFAOYSA-N [O-2].[In+3].[Mo+4].[W+4] Chemical compound [O-2].[In+3].[Mo+4].[W+4] SBLMSJMKLGAHLV-UHFFFAOYSA-N 0.000 description 3
- GVHGBEOPHGZWAG-UHFFFAOYSA-N [O-2].[In+3].[W+4].[Ti+4] Chemical compound [O-2].[In+3].[W+4].[Ti+4] GVHGBEOPHGZWAG-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000008204 material by function Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 150000007529 inorganic bases Chemical group 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ZMCUDHNSHCRDBT-UHFFFAOYSA-M caesium bicarbonate Chemical compound [Cs+].OC([O-])=O ZMCUDHNSHCRDBT-UHFFFAOYSA-M 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 150000005323 carbonate salts Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical compound [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- XTWYEKYJOFSXQB-UHFFFAOYSA-N indium;oxotungsten;titanium Chemical compound [Ti].[In].[W]=O XTWYEKYJOFSXQB-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- CMOAHYOGLLEOGO-UHFFFAOYSA-N oxozirconium;dihydrochloride Chemical compound Cl.Cl.[Zr]=O CMOAHYOGLLEOGO-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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Abstract
The invention discloses an IWO target material and a preparation method and application thereof, wherein the IWO target material comprises indium oxide and tungsten oxide; the content of the tungsten oxide is 0.1-0.15 In terms of the atomic ratio of W/(In + W); the density of the IWO target material is 6.5g/cm3～7.18g/cm3. The IWO target material has good conductivity and high light transmittance; meanwhile, the problem of low production efficiency caused by abnormal discharge due to the poisoning and nodulation generated in the film coating process is solved; the target material is applied to the solar cell, so that the conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the technical field of photoelectric functional materials, in particular to an IWO target material and a preparation method and application thereof.
Background
With the rapid development of society and scientific technology, the demand of human beings for functional materials is increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, touch screens, semiconductors, and solar energy, a new functional material, Transparent Conductive Oxide (TCO) film, is produced and developed.
On the other hand, as a transparent conductive film for a solar cell, the following requirements are imposed on the performance: cut-off wavelength within 1200nm, high light transmittance and good conductivity. In the related technology, a high-conductivity material is prepared by doping tungsten in indium oxide, and by using the conductive material, a conductive thin film material with higher light transmittance in a range of 940-1200 nm can be prepared; thereby improving the conversion efficiency of the solar cell. However, because the indium oxide is doped with tungsten to obtain a high-density target material (the tungsten oxide is difficult to sinter into a target material with higher density), a transparent conductive film is difficult to obtain through magnetron sputtering (PVD), and the transparent conductive film can be obtained through RPD (activated plasma deposition), but the method has high equipment price and low production efficiency, so that the production cost is high, and the method is not favorable for large-scale production in the solar energy industry and the requirement for reducing the cost.
Therefore, there is a need to develop an IWO target having high density and good conductivity.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides the IWO target material which has high density and good conductivity.
The invention also provides a preparation method of the IWO target.
The invention also provides application of the IWO target.
A first aspect of the present invention provides an IWO target comprising indium oxide and tungsten oxide;
the content of the tungsten oxide is 0.1-0.15 In terms of the atomic ratio of W/(In + W);
the density of the IWO target material is 6.5g/cm3～7.18g/cm3。
According to some embodiments of the invention, the IWO target further comprises at least one of a first doping element and a second doping element; the first doping element is at least one of silicon and titanium.
According to some embodiments of the invention, the second doping element M is at least one of molybdenum, zirconium and hafnium; the total content of tungsten and the second doping element M is 0.003-0.05 In terms of atomic number of (W + M)/(In + W + M).
According to some embodiments of the present invention, when the IWO target contains silicon, the total mass ratio of the silicon to the IWO target is 200ppm to 1500 ppm.
According to some embodiments of the present invention, when the IWO target contains silicon, the total mass ratio of the silicon to the IWO target is 1000ppm to 1500 ppm.
According to some embodiments of the present invention, when the IWO target contains titanium, the total mass ratio of the titanium to the IWO target is 0.1% to 0.6%.
According to some embodiments of the present invention, when the IWO target contains titanium, the total mass ratio of the titanium to the IWO target is 0.3% to 0.6%.
The second aspect of the present invention provides a preparation method of the above IWO target, comprising the following steps:
s1, mixing a mixture of indium oxide and tungsten oxide and the oxide of the doping element, and pressing into a block body;
s2, sintering the block after cold isostatic pressing to obtain the IWO target material;
wherein, the preparation method of the mixture of indium oxide and tungsten oxide comprises a chemical coprecipitation method.
According to some embodiments of the invention, the chemical co-precipitation method comprises the steps of:
mixing indium raw material liquid and tungsten raw material liquid, adding a pH regulator, regulating the pH to 7.7-8.6, reacting, performing solid-liquid separation after the reaction is finished, collecting a solid phase, drying the solid phase, and calcining to obtain indium tungsten oxide powder.
According to some embodiments of the invention, the indium raw material liquid includes at least one of indium sulfate, indium nitrate, and indium chloride.
According to some embodiments of the invention, the tungsten feedstock solution comprises at least one of ammonium tungstate, sodium tungstate, and potassium tungstate.
According to some embodiments of the invention, the molar concentration of indium in the indium raw material liquid is 0.05mol/L to 0.3 mol/L.
According to some embodiments of the invention, the molar concentration of tungsten in the tungsten source solution is between 0.006mol/L and 0.04 mol/L.
According to some embodiments of the invention, the pH adjusting agent is an inorganic base or a carbonate.
According to some embodiments of the invention, the inorganic base is at least one of sodium hydroxide, potassium hydroxide, cesium hydroxide and ammonia monohydrate.
According to some embodiments of the invention, the carbonate salt is at least one of sodium carbonate, potassium carbonate, cesium carbonate, sodium bicarbonate, potassium bicarbonate and cesium bicarbonate.
According to some embodiments of the invention, the temperature of the reaction is between 20 ℃ and 45 ℃.
According to some embodiments of the invention, the temperature of the calcination is from 200 ℃ to 900 ℃.
According to some embodiments of the invention, the cold isostatic pressing process has the following process parameters:
the atmosphere is oxygen; the pressure is 0.1MPa to 0.3 MPa.
According to some embodiments of the invention, the temperature of the sintering is 1450 ℃ to 1550 ℃.
The method adopts doped trace silicon and titanium elements and is matched with pressure sintering, so that the density of the target material is obviously improved, nodulation and abnormal discharge are effectively reduced, and the production efficiency is improved.
The third aspect of the invention provides the use of the IWO target as described above for the preparation of a solar cell.
The invention has at least the following beneficial effects:
the IWO target material has good conductivity and high light transmittance; meanwhile, the problem of low production efficiency caused by abnormal discharge due to the poisoning and nodulation generated in the film coating process is solved; the target material is applied to the solar cell, so that the conversion efficiency of the solar cell is improved.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
The preparation method of the indium tungsten oxide powder in the embodiment of the invention comprises the following steps:
mixing an indium chloride solution with the concentration of 0.176mol/L and a sodium tungstate solution with the concentration of 0.024mol/L in equal volume, adjusting the pH value to 8.4 by dripping a sodium hydroxide solution for reaction, controlling the reaction temperature to be about 30 ℃, performing ball-milling circulation on a reaction solution in the reaction process, and performing solid-liquid separation after the reaction is finished; collecting solid phase, washing and freeze-drying; calcining at 900 deg.c for 1 hr to obtain indium-tungsten oxide powder.
Example 1
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours; a density of 4.43g/cm was obtained3Target ofA material is provided.
Example 2
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.05 MPa); the density obtained was 5.87g/cm3The target of (1).
Example 3
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.1 MPa); a density of 6.5g/cm was obtained3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 35.3 omega, and the transmittance under 550nm is 88.10 percent.
Example 4
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.2 MPa); the density obtained was 6.65g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.3 omega, and the transmittance at 550nm is 88.50%.
Example 5
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.25 MPa); a density of 6.71g/cm was obtained3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 32.9 omega, and the transmittance under 550nm is 88.62％。
Example 6
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.75g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 32.3 omega, and the transmittance at 550nm is 88.90%.
Example 7
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 400ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.82g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 32.5 omega, and the transmittance at 550nm is 89.10%.
Example 8
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 600ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 6.91g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.1 omega, and the transmittance at 550nm is 89.30%.
Example 9
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 800ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.95g/cm3Target ofA material is provided. After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.7 omega, and the transmittance at 550nm is 90.40%.
Example 10
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder with silicon dioxide with the total weight content of 1200ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.05g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.9 omega, and the transmittance at 550nm is 90.38%.
Example 11
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and silicon dioxide with the total weight content of 1500ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.08g/cm3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 35.4 omega, and the transmittance under 550nm is 90.47%.
Example 12
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder with silicon dioxide with the total weight content of 1600ppm (calculated by Si) and pressing the mixture into a powder with the density of 3.59g/cm3Sintering the blank body at 1480 ℃ for 5 hours in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 7.11g/cm was obtained3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 42.5 omega, and the transmittance under 550nm is 90.45 percent.
Example 13
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The titanium content in the blank is 0.1%) Sintering at 1480 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.72g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 25.3 omega, and the transmittance at 550nm is 88.49%.
Example 14
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.15 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.84g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 24.7 omega, and the transmittance at 550nm is 89.30%.
Example 15
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.22 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.85g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 27.1 omega, and the transmittance under 550nm is 90.24%.
Example 16
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.3 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.92g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 26.9 omega, and the transmittance at 550nm is 89.70%.
Example 17
The embodiment is a preparation method of an IWO target, which comprises the following steps:
indium tungsten oxide powderThe mixture was pressed to a density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.4 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.98g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.7 omega, and the transmittance at 550nm is 90.40%.
Example 18
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.45 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 7.03g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.9 omega, and the transmittance at 550nm is 90.38%.
Example 19
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.5 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.08g/cm3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material is slightly nodulated, the film resistance is 35.4 omega, and the transmittance under 550nm is 90.47%.
Example 20
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing indium tungsten oxide powder and titanium dioxide, pressing into a mixture with the density of 3.59g/cm3The blank (the weight part of titanium in the blank is 0.6 percent) is sintered for 5 hours at 1480 ℃ under the oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.1g/cm3The target of (1). The target material is seriously nodulated after the target material is coated with a film (magnetron sputtering (PVD)).
Example 21
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing an indium chloride solution with the concentration of 0.176mol/L, a sodium tungstate solution with the concentration of 0.012mol/L and a titanium tetrachloride solution with the concentration of 0.012mol/L in equal volume, adjusting the pH value to 8.4 by dropwise adding a sodium hydroxide solution for reaction, controlling the reaction temperature to be about 30 ℃, performing ball-milling circulation on a reaction solution in the reaction process, and performing solid-liquid separation after the reaction is finished; collecting solid phase, washing and freeze-drying; calcining for 1h at 900 ℃ to obtain the indium oxide tungsten titanium powder.
Mixing indium tungsten titanium oxide powder ((W + Ti)/(W + Ti + In) of 0.12, atomic ratio) with silicon dioxide, and pressing to obtain powder with density of 3.59g/cm3Sintering the blank (1000 ppm calculated by silicon) at 1480 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.05g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.2 omega, and the transmittance at 550nm is 90.26%.
Example 22
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing an indium chloride solution with the concentration of 0.176mol/L, a sodium tungstate solution with the concentration of 0.012mol/L and a hafnium tetrachloride solution with the concentration of 0.012mol/L in equal volume, adjusting the pH value to 8.4 by dropwise adding a sodium hydroxide solution for reaction, controlling the reaction temperature to be about 30 ℃, performing ball milling circulation on a reaction solution in the reaction process, and performing solid-liquid separation after the reaction is finished; collecting solid phase, washing and freeze-drying; calcining at 900 ℃ for 1h to obtain the indium-tungsten-hafnium oxide powder.
Mixing indium tungsten hafnium oxide powder ((W + Hf)/(W + Hf + In) 0.12, atomic ratio) with silicon dioxide, and pressing to obtain a powder with a density of 3.59g/cm3Sintering the blank (1000 ppm calculated by silicon) at 1480 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.01g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.8 omega, and the transmittance at 550nm is 90.38%.
Example 23
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing an indium chloride solution with the concentration of 0.176mol/L, a sodium tungstate solution with the concentration of 0.012mol/L and a zirconium oxychloride solution with the concentration of 0.012mol/L in equal volume, adjusting the pH value to 8.4 by dropwise adding a sodium hydroxide solution for reaction, controlling the reaction temperature to be about 30 ℃, performing ball milling circulation on a reaction solution during the reaction process, and performing solid-liquid separation after the reaction is finished; collecting solid phase, washing and freeze-drying; calcining for 1h at 900 ℃ to obtain the indium oxide tungsten zirconium powder.
Mixing indium tungsten zirconium oxide powder ((W + Zr)/(W + Zr + In) 0.12, atomic ratio) with silicon dioxide, and pressing to obtain powder with density of 3.59g/cm3Sintering the blank (1000 ppm calculated by silicon) at 1480 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.07g/cm3The target of (1). After the target material is coated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.3 omega, and the transmittance under 550nm is 90.28%.
Example 24
The embodiment is a preparation method of an IWO target, which comprises the following steps:
mixing an indium chloride solution with the concentration of 0.176mol/L, a sodium tungstate solution with the concentration of 0.012mol/L and a sodium molybdate solution with the concentration of 0.012mol/L in equal volume, adjusting the pH value to 8.4 by dropwise adding a sodium hydroxide solution for reaction, controlling the reaction temperature to be about 30 ℃, performing ball-milling circulation on a reaction solution during the reaction process, and performing solid-liquid separation after the reaction is finished; collecting solid phase, washing and freeze-drying; calcining for 1h at 900 ℃ to obtain the indium oxide tungsten molybdenum powder.
Mixing indium oxide tungsten molybdenum powder ((W + Mo)/(W + Mo + In) of 0.12, atomic ratio) with silicon dioxide, and pressing to obtain powder with density of 3.59g/cm3Sintering the blank (1000 ppm calculated by silicon) at 1480 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 7.05g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 33.4 omega, and the transmittance at 550nm is 90.30%.
Example 25
The embodiment is a preparation method of an IWO target, which comprises the following steps:
the method for preparing indium tungsten oxide titanium powder of this example was the same as in example 21.
The indium tungsten titanium oxide powder ((W + Ti)/(W + Ti + In) was 0.12, atomic ratio) was pressed to a density of 3.59g/cm3The blank body (the mass fraction of titanium in the blank body is 0.4 percent) is sintered for 5 hours at 1480 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.92g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 26.9 omega, and the transmittance at 550nm is 89.70%.
Example 26
The embodiment is a preparation method of an IWO target, which comprises the following steps:
the preparation method of the indium tungsten hafnium oxide powder of this example is the same as that of example 22.
Mixing indium tungsten hafnium oxide powder ((W + Hf)/(W + Hf + In) 0.12, atomic ratio) with titanium dioxide, and pressing to obtain a powder with a density of 3.59g/cm3The blank body (the mass fraction of titanium in the blank body is 0.4 percent) is sintered for 5 hours at 1480 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 6.9g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 26.2 omega, and the transmittance at 550nm is 89.66%.
Example 27
The embodiment is a preparation method of an IWO target, which comprises the following steps:
the method for preparing indium tungsten zirconium oxide powder in this example was the same as in example 23.
Mixing indium tungsten zirconium oxide powder ((W + Zr)/(W + Zr + In) 0.12, atomic ratio) with silicon dioxide, and pressing to obtain powder with density of 3.59g/cm3The blank body (the mass fraction of titanium in the blank body is 0.4 percent) is sintered for 5 hours at 1480 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.89g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 26.1 omega, and the transmittance at 550nm is 89.66%.
Example 28
The embodiment is a preparation method of an IWO target, which comprises the following steps:
the method for preparing the indium tungsten molybdenum oxide powder of this example is the same as that of example 24.
Mixing indium oxide tungsten molybdenum powder ((W + Mo)/(W + Mo + In) of 0.12, atomic ratio) with silicon dioxide, and pressing to obtain powder with density of 3.59g/cm3The blank body (the mass fraction of titanium in the blank body is 0.4 percent) is sintered for 5 hours at 1480 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); the density obtained was 6.96g/cm3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 26.4 omega, and the transmittance at 550nm is 89.68%.
Example 29
The embodiment is a preparation method of an IWO target, which comprises the following steps:
pressing indium tungsten oxide powder into powder with the density of 3.59g/cm3Sintering the blank body for 5 hours at 1430 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 6.4g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 37 omega, and the transmittance at 550nm is 88.62%.
Example 30
The embodiment is a preparation method of an IWO target, which comprises the following steps:
pressing indium tungsten oxide powder into powder with the density of 3.59g/cm3Sintering the blank body at 1450 ℃ for 5h in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 6.5g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 38.5 omega, and the transmittance at 550nm is 88.90%.
Example 31
The embodiment is a preparation method of an IWO target, which comprises the following steps:
pressing indium tungsten oxide powder into powder with the density of 3.59g/cm3Sintering the blank body for 5 hours at 1560 ℃ in an oxygen atmosphere (the oxygen pressure is 0.3 MPa); a density of 6.6g/cm was obtained3The target of (1). After the target material is plated (magnetron sputtering (PVD)), the target material has no nodules, the film resistance is 39.4 omega, and the transmittance at 550nm is 88.77%.
The detailed formulation and the test results of the targets in examples 1 to 31 of the present invention are summarized in table 1.
Table 1 summary of the formulation and the test results of the targets of examples 1 to 31 of the present invention
As shown in Table 1, the effect of the comparative oxygen pressure on the density in examples 1 to 12 is shown, and it is shown from Table 1 that the density of the finally sintered target material is low (4.43 g/cm) when the oxygen pressure is less than 0.05MPa3～5.87g/cm3)。
Examples 13-20 compare the effect of titanium content on target performance and show from the data in table 1: when the titanium content is too high (the mass fraction of titanium is more than 0.5%), the plating film may have nodules.
In examples 21-28, the effect of different metal dopings on target performance was compared and is shown in Table 1: the target material has stable performance, good conductivity and high light transmittance.
In examples 29 to 31, the effect of temperature on the target properties was compared and the data in Table 1 show that: the density of the target material is limited by simply increasing the sintering temperature, and the film resistance is higher under the condition of keeping the same transmittance.
In conclusion, the IWO target material disclosed by the invention is good in conductivity and high in light transmittance; meanwhile, the problem of low production efficiency caused by abnormal discharge due to the poisoning and nodulation generated in the film coating process is solved; the target material is applied to the solar cell, so that the conversion efficiency of the solar cell is improved, and is improved from 22% to 24.1% at most.
While the embodiments of the present invention have been described in detail with reference to the description, the present invention is not limited to the embodiments, and various changes can be made without departing from the gist of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
1. An IWO target material, which is characterized in that:
comprising indium oxide and tungsten oxide;
the content of the tungsten oxide is 0.1-0.15 In terms of the atomic ratio of W/(In + W);
the density of the IWO target material is 6.5g/cm3～7.18g/cm3。
2. An IWO target according to claim 1, characterized in that: further comprises at least one of a first doping element and a second doping element M; the first doping element is at least one of silicon and titanium; preferably, the second doping element M is at least one of molybdenum, zirconium and hafnium; the total content of tungsten and the second doping element M is 0.003-0.05 In terms of atomic number of (W + M)/(In + W + M).
3. An IWO target according to claim 2, characterized in that: when the IWO target material contains silicon element, the total mass ratio of the silicon element to the IWO target material is 200ppm to 1500 ppm; preferably, the total mass ratio of the silicon element to the IWO target material is 1000ppm to 1500 ppm.
4. An IWO target according to claim 1, characterized in that: when the IWO target material contains titanium, the total mass ratio of the titanium to the IWO target material is 0.1-0.6%; preferably, the total mass ratio of the titanium element to the IWO target material is 0.3-0.6%.
5. A method of preparing the IWO target of claim 2, wherein: the method comprises the following steps:
s1, mixing a mixture of indium oxide and tungsten oxide and the oxide of the doping element, and pressing into a block body;
s2, sintering the block after cold isostatic pressing to obtain the IWO target material;
the preparation method of the mixture of the indium oxide and the tungsten oxide comprises a chemical coprecipitation method.
6. The method of claim 5, wherein: the chemical coprecipitation method comprises the following steps:
mixing indium raw material liquid and tungsten raw material liquid, adding a pH regulator, regulating the pH to 7.7-8.6, reacting, performing solid-liquid separation after the reaction is finished, collecting a solid phase, drying and calcining the solid phase to obtain the indium tungsten oxide powder.
7. The method of claim 6, wherein: the calcining temperature is 200-900 ℃.
8. The method of claim 5, wherein: the technological parameters of the cold isostatic pressing treatment are as follows:
the atmosphere is oxygen; the pressure is 0.1MPa to 0.3 MPa.
9. The method of claim 5, wherein: the sintering temperature is 1450-1550 ℃.
10. Use of the IWO target of claim 7 in the preparation of a solar cell.
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|---|---|---|---|---|
| CN114702304A (en) * | 2022-05-11 | 2022-07-05 | 郑州大学 | Indium-tungsten oxide target material and preparation method thereof |
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