CN113540272B - 光学装置 - Google Patents
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- CN113540272B CN113540272B CN202011310012.6A CN202011310012A CN113540272B CN 113540272 B CN113540272 B CN 113540272B CN 202011310012 A CN202011310012 A CN 202011310012A CN 113540272 B CN113540272 B CN 113540272B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 88
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 claims 6
- 210000002858 crystal cell Anatomy 0.000 claims 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000006185 dispersion Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 14
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
本公开提供一种光学装置。光学装置包括第一导电层、第一接面层、第一光吸收层、第二接面层与第二导电层。第一接面层配置在第一导电层上。第一光吸收层配置在第一接面层上,其中光吸收层包括多个晶元格,每一晶元格包括多个柱状结构,每一晶元格的柱状结构的尺寸不同。第二接面层配置在光吸收层上。第二导电层配置在第二接面层上。
Description
技术领域
本发明涉及一种光学装置,尤其涉及一种具有高空间解析度(high spatialresolution)的光学装置。
背景技术
光学感测器,例如光谱感测器(spectrometer)或是图像感测器,用以检测光线或是取得一物体的图像。光学感测器一般安装于如光谱仪或是相机等电子装置。对于光学感测器来说,空间解析度是重要的。因此,如何有效地增加空间解析度将成为各家厂商的技术改善的重点。
发明内容
本发明的目的在于提供一种光学装置,以解决上述至少一个问题。
本发明提供一种光学装置,包括第一导电层、第一接面层、第一光吸收层、第二接面层与第二导电层。第一接面层配置在第一导电层上。第一光吸收层配置在第一接面层上,其中光吸收层包括多个晶元格,每一晶元格包括多个柱状结构,每一晶元格的柱状结构的尺寸不同。第二接面层配置在光吸收层上。第二导电层配置在第二接面层上。
本发明的有益效果在于,本发明所公开的光学装置,通过光吸收层包括多个晶元格,而每一晶元格包括多个柱状结构,且每一晶元格的柱状结构的尺寸不同。如此一来,可以达到高空间解析度。另外,光学装置可以进一步包括多个滤波层,且每一滤波层配置在每一晶元格的柱状结构的一部分上,或是在柱状结构中注入不同材料,以抑制对应的柱状结构的边带。如此一来,可以增加光学装置的准确性。
附图说明
图1为依据本发明的一实施例的光学装置的剖面示意图。
图2为图1的光学装置的俯视图。
图3为依据本发明的一实施例的光学装置的光吸收层的折射率的示意图。
图4A为依据本发明的一实施例的色散位移腔及其折射率的对应关系示意图。
图4B为图4A的色散的示意图。
图4C为依据本发明的一实施例的色散平面化腔与其折射率的对应关系示意图。
图4D为图4C的色散的示意图。
图5A为依据本发明的一实施例的柱状结构的尺寸的示意图。
图5B为依据本发明的一实施例的将光吸收层所吸收的光转换成电流的波形图。
图6A为依据本发明的另一实施例的光学装置的俯视图。
图6B为图6A的光学装置的剖面示意图。
图7A为依据本发明的另一实施例的光学装置的俯视图。
图7B为图7A的光学装置的剖面示意图。
图8为依据本发明的另一实施例的将光吸收层所吸收的光转换成电流的波形图。
图9A为依据本发明的另一实施例的光学装置的俯视图。
图9B为图9A的光学装置的剖面示意图。
图10A为依据本发明的另一实施例的光学装置的俯视图。
图10B为依据本发明的一实施例的将光吸收层所吸收的光转换成电流的波形图。
附图标记如下:
100,600,700,900,1000:光学装置
110:第一导电层
120:第一接面层
130:第一光吸收层
131_1,131_2,131_3,131_4,131_5,131_6,133_1,133_2,133_3,133_4,133_5,133_6,133_7,133_8,133_9,133_10,133_11,133_12:柱状结构
140:第二接面层
150:第二导电层
160:基板
610:滤波层
a1:柱状结构的尺寸
a2:柱状结构的最大设定范围
D:柱状结构的尺寸的宽度
S11,S12,S13,S14,S15,S16,S21,S22,S2,S24,S25,S26,S27,S28,S29,S30,S31,S32:曲线
Vcc:电压端
X,Z:坐标
具体实施方式
本说明书的技术用语参照本技术领域的习惯用语,如本说明书对部分用语有加以说明或定义,该部分用语的解释以本说明书的说明或定义为准。本公开的各个实施例分别具有一或多个技术特征。在可能实施的前提下,本技术领域技术人员可选择性地实施任一实施例中部分或全部的技术特征,或者选择性地将这些实施例中部分或全部的技术特征加以组合。
在以下所列举的各实施例中,将以相同的标号代表相同或相似的元件或组件。
图1为依据本发明的一实施例的光学装置的剖面示意图。图2为图1的光学装置的俯视图。在本实施例中,光学装置100适用于CMOS图像感测器(COMS image sensor,CIS)、环境光感测器(ambient light sensor,ALS)、光谱仪(spectrometer)等。
请参考图1与图2。光学装置100包括第一导电层110、第一接面层120、第一光吸收层130、第二接面层140、第二导电层150与基板160。
在本实施例中,第一导电层110的材料可以为氧化铟锡(indium tin oxide,ITO)且第一导电层110例如耦接至接地端的一接触电极。第一接面层120配置在第一导电层110上。在本实施例中,第一接面层120可以为p形非晶硅(amorphous silicon,a-Si)。
光吸收层130配置在第一接面层120上。光吸收层130包括多个晶元格(unit cell)131。每一晶元格131包括多个柱状结构132_1、132_2、132_3、132_4、132_5与132_6。在本实施例中,每一晶元格131的柱状结构的数量例如为至少六个。每一晶元格131的格柱状结构132_1、132_2、132_3、132_4、132_5与132_6的尺寸不同。举例来说,柱状结构132_1、132_2、132_3、132_4、132_5与132_6可以依序增加。
例如,柱状结构132_1的尺寸小于柱状结构132_2的尺寸。柱状结构132_2的尺寸小于柱状结构132_3的尺寸。柱状结构132_3的尺寸小于柱状结构132_4的尺寸。柱状结构132_4的尺寸小于柱状结构132_5的尺寸。柱状结构132_5的尺寸小于柱状结构132_6的尺寸。
在本实施例中,柱状结构132_1、132_2、132_3、132_4、132_5与132_6的材料可以为非晶硅(a-Si)与非晶硅杂质(amorphous silicon impurities)。因此,每一晶元格131的相应的折射率(refractive index)可以如图3所示。在图3中,每一晶元格131的折射率例如呈现W形变化。
第二接面层140配置在光吸收层130上。在本实施例中,第二接面层140的材料可以为n型非晶硅。第二导电层150配置在第二接面层140上。在本实施例中,第二导电层150的材料可以为氧化铟锡(ITO),且第二导电层150例如为耦接至电压端Vcc的一接触电极。基板160配置在相对于第一接面层120的第一导电层110的一侧上。在本实施例中,基板160的材料例如为玻璃(glass)。光学装置100通过第一接面层120、光吸收层130与第二接面层140将限制模式波(confinement mode wave)转换成电流,并通过第一导电层10与第二导电层150输出上述电流。
图4A为依据本发明的一实施例的色散位移腔及其折射率的对应关系示意图。图4B为图4A的色散的示意图。一般来说,由于波导腔(waveguide cavity)中的色散,光在光传播中可能会衰减。为了解决波导腔中的色散,可以使用波导腔中的不同折射率(refractiveindex),例如色散位移腔(dispersion-shifted cavity,DSC),如图4A所示。通过色散位移腔,色散可以从原始波长(例如虚线)位移至另一波长(例如实线),如图4B所示。因此,原始波长的色散可以接近0。
图4C为依据本发明的一实施例的色散平面化腔与其折射率的对应关系示意图。图4D为图4C的色散的示意图。为了解决波导腔中的色散,可以使用波导腔中的不同折射率,例如色散平面化腔(dispersion-flattened cavity,DFC),如图4C所示。通过色散平面化腔,色散可以被平面化(例如实线),如图4D所示。因此,色散可以有效地抑制,亦即在特定波长(certain wavelength)中几乎没有色散,使得在波导腔中传播的光不会衰减。
在本实施例中,光学装置100的晶元格131可以使用图4A~图4D的概念。因此,光学装置100可以有效地抑制光传播(light propagation)的色散(dispersion)。
图5为依据本发明的一实施例的柱状结构的尺寸的示意图。在图5A,a1表示柱状结构的尺寸,a2表示柱状结构的最大设定范围,且D为柱状结构的尺寸的宽度。在本实施例中,每一柱状结构的尺寸的宽度例如小于0.5um。
a1与a2的比率(a1/a2)可以决定柱状结构所吸收的光的波长。举例来说,当a1与a2的比率(a1/a2)为小时,柱状结构所吸收的光的波长可以较小。当a1与a2的比率(a1/a2)为大时,柱状结构所吸收的光的波长可以较大。因此,柱状结构可以吸收光,以在该光的对应波长中产生最大的电流。举例来说,a1与a2的比率(a1/a2)为46%,柱状结构可以吸收光,以在该光的对应波长(例如接近550nm)中产生最大的电流。
柱状结构所转换的电流可以由如下公式(1)计算。
Jph=q*Nph~q*(P2–P1),(1)
其中,Jph表示光子电流密度(photon current density),q表示电荷,Nph表示入射光子(incident photon)的感应电荷的数量,P2表示柱状结构的顶面的光功率(opticalpower),P1表示柱状结构的底面的光功率,(P2–P1)表示柱状结构内的现有光能(existinglight power)。
在本实施例中,每一柱状结构所吸收的光的波长会随着柱状结构的尺寸改变而改变。此外,当柱状结构的尺寸为大时,柱状结构所吸收的光的波长为大,且当柱状结构的尺存为小时,柱状结构所吸收的光的波长为小。
举例来说,柱状结构132_1所吸收的光的波长会短于柱状结构132_2所吸收的光的波长。柱状结构132_2所吸收的光的波长会短于柱状结构132_3所吸收的光的波长。柱状结构132_3所吸收的光的波长会短于柱状结构132_4所吸收的光的波长。柱状结构132_4所吸收的光的波长会短于柱状结构132_5所吸收的光的波长。柱状结构132_5所吸收的光的波长会短于柱状结构132_6所吸收的光的波长。
图5B为依据本发明的一实施例的将光吸收层所吸收的光转换成电流的波形图。在本实施例中,光吸收层130所吸收的光的波长范围例如为450~700nm。在图5B中,曲线S11对应于柱状结构132_1,曲线S12对应于柱状结构132_2,曲线S13对应于柱状结构132_3,曲线S14对应于柱状结构132_4,曲线S15对应于柱状结构132_5,曲线S16对应于柱状结构132_6。
柱状结构132_1可以在曲线S11的光的对应波长吸收光以产生较大的电流。柱状结构132_2可以在曲线S12的光的对应波长吸收光以产生较大的电流。柱状结构132_3可以在曲线S13的光的对应波长吸收光以产生较大的电流。
柱状结构132_4可以在曲线S14可以在曲线S12的光的对应波长吸收光以产生较大的电流。柱状结构132_5可以在曲线S15的光的对应波长吸收光以产生较大的电流。柱状结构132_6可以在曲线S16的光的对应波长吸收光以产生较大的电流。
图6A为依据本发明的另一实施例的光学装置的俯视图。图6B为图6A的光学装置的剖面示意图。请参考图6A与图6B,光学装置600与光学装置100相似。也就是说,光学装置600包括图1的第一导电层110、第一接面层120、光吸收层130’第二接面层140、第二导电层150与基板160,且光学装置600进一步包括多个滤波层610。
每一滤波层610配置在每一晶元格131的柱状结构的一部分上。举例来说,滤波层610配置在每一晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6上。
在本实施例中,每一晶元格131的柱状结构的一部分(例如柱状结构132_4、柱状结构132_5与柱状结构132_6)具有多个边带(side bands),而这些边带小于光吸收层130所吸收的光的波长范围的一预设波长。在本实施例中,每一滤波层610可以例如包括多层膜(multi-film)。通过滤波层610,可以有效地抑制柱状结构132_4、柱状结构132_5与柱状结构132_6的边带(side band),以增加光学装置600的准确性。
图7A为依据本发明的另一实施例的光学装置的俯视图。图7B为图7A的光学装置的剖面示意图。请参考图7A与图7B,光学装置700与光学装置600相似。光学装置700与光学装置600之间的差异在于柱状结构的排列。也就是说,在光学装置700中,每两个晶元格的柱状结构的一部分彼此相邻排列。举例来说,每两个晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6彼此相邻排列。
光学装置700也可以包括多个滤波层610.每一滤波层610配置在每一晶元格131的柱状结构的一部分上。举例来说,滤波层610配置在每一晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6上。在本实施例中,每一晶元格131的柱状结构的一部分(例如柱状结构132_4、柱状结构132_5与柱状结构132_6)具有低于光吸收层130所吸收的光的波长范围中的预设波长的边带。在本实施例中,每一滤波层可以例如包括多层膜。光学装置700可以达成与光学装置600的相同效果。另外,可以通过光学装置700的柱状结构的排列来简化形成滤波层610的工艺。
图8为依据本发明的另一实施例的将光吸收层所吸收的光转换成电流的波形图。在本实施例中,光吸收层130所吸收的光的波长范围例如为450~700nm,且预设波长为550。
在图8中,曲线S11对应于柱状结构132_1,曲线S12对应于柱状结构132_2,曲线S13对应于柱状结构132_3,曲线S14对应于柱状结构132_4,曲线S15对应于柱状结构132_5,曲线S16对应于柱状结构132_6。
相较于图5B,由图8的曲线S14’、S15’与S16’,可以看出晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6的边带可以有效地抑制。如此一来,可以增加光学装置(例如光学装置600或光学装置700)的准确性。
图9A为依据本发明的另一实施例的光学装置的俯视图。图9B为图9A的光学装置的剖面示意图。请参考图9A与图9B,光学装置900与光学装置700相似。光学装置900与光学装置700之间的差异在于光学装置900不包括滤波层610。
在本实施例中,每一晶元格的柱状结构的一部分的材料为非晶硅及非晶硅杂质,而每一晶元格的柱状结构的另一部分的材料为锗(Ge)及锗杂质,其中每一晶元格的柱状结构的另一部分具有多个边带,且这些边带小于光吸收层所吸收的光的波长范围的一预设波长。另外,光吸收层所吸收的光的波长范围为450~700nm,且预设波长为550nm。
举例来说,在本实施例中,晶元格131的柱状结构132_1、柱状结构132_2与柱状结构132_3的材料为非晶硅及非晶硅杂质。晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6的材料为锗(Ge)及锗杂质。因此,晶元格131的柱状结构132_4、柱状结构132_5与柱状结构132_6的边带也可有效地抑制,如图8的曲线S14’、S15’与S16’所示。
在如上的实施例中,晶元格131包括六个柱状结构131_1、131_2、131_3、131_4、131_5与131_6,但本公开实施例不限此。使用者可以调整适合于实施例的每一晶元格131的柱状结构的数量。举例来说,柱状结构的数量可以为至少六个。另一实施例将描述如下。
图10A为依据本发明的另一实施例的光学装置的俯视图。请参考图10A,光学装置1000与光学装置100相似。光学装置1000与光学装置100之间的差异在于柱状结构的数量。在光学装置1000中,每一晶元格131包括十二个柱状结构133_1、133_2、133_3、133_4、133_5、133_6、133_7、133_8、133_9、133_10、133_11与133_12。晶元格131的柱状结构133_1、133_2、133_3、133_4、133_5、133_6、133_7、133_8、133_9、133_10、133_11与133_12的尺寸不同。
光学装置1000的柱状结构133_1、133_2、133_3、133_4、133_5、133_6、133_7、133_8、133_9、133_10、133_11和133_12与光学装置100的柱状结构132_1、132_2、132_3、132_4、132_5与132_6。该描述与光学装置100的柱状结构132_1、132_2、132_3、132_4、132_5与132_6的实施例相似,故在此不再赘述。
图10B为依据本发明的一实施例的将光吸收层所吸收的光转换成电流的波形图。在本实施例中,光吸收层130所吸收的光的波长范围例如为450~700nm。在第10B途中,曲线S21对应于柱状结构133_1,曲线S22对应于柱状结构133_2,曲线S23对应于柱状结构133_3,曲线S24对应于柱状结构133_4,曲线S25对应于柱状结构133_5,曲线S26对应于柱状结构133_6,曲线S27对应于柱状结构133_7,曲线S28对应于柱状结构133_8,曲线S29对应于柱状结构133_9,曲线S30对应于柱状结构133_10,曲线S31对应于柱状结构133_11,曲线S32对应于柱状结构133_12。
柱状结构133_1可以在曲线S21的光的对应波长吸收光以产生较大的电流。柱状结构133_2可以在曲线S22的光的对应波长吸收光以产生较大的电流。柱状结构133_3可以在曲线S23的光的对应波长吸收光以产生较大的电流。
柱状结构133_4可以在曲线S24的光的对应波长吸收光以产生较大的电流。柱状结构133_5可以在曲线S25的光的对应波长吸收光以产生较大的电流。柱状结构133_6可以在曲线S26的光的对应波长吸收光以产生较大的电流。
柱状结构133_7可以在曲线S27的光的对应波长吸收光以产生较大的电流。柱状结构133_8可以在曲线S28的光的对应波长吸收光以产生较大的电流。柱状结构133_9可以在曲线S29的光的对应波长吸收光以产生较大的电流。
柱状结构133_10可以在曲线S30的光的对应波长吸收光以产生较大的电流。柱状结构133_11可以在曲线S31的光的对应波长吸收光以产生较大的电流。柱状结构133_12可以在曲线S32的光的对应波长吸收光以产生较大的电流。
另外,光学装置1000也可包括相似于图6A与图6B的滤波层610,以抑制对应的柱状结构的边带。光学装置1000的滤波层610的设定方式可以参考图6A与图6B的实施例,故在此不再赘述。此外,光学装置1000可以在柱状结构中注入不同材料,以抑制对应的柱状结构的边带。注入不同材料的方式可以参考图9A与图9B的实施例,故在此不再赘述。
综上所述,本发明所公开的光学装置,通过光吸收层包括多个晶元格,而每一晶元格包括多个柱状结构,且每一晶元格的柱状结构的尺寸不同。如此一来,可以达到高空间解析度。另外,光学装置可以进一步包括多个滤波层,且每一滤波层配置在每一晶元格的柱状结构的一部分上,或是在柱状结构中注入不同材料,以抑制对应的柱状结构的边带。如此一来,可以增加光学装置的准确性。
本发明虽以实施例公开如上,然其并非用以限定本发明的范围,本领域技术人员在不脱离本发明的精神和范围内,当可做些许的更动与润饰,因此本发明的保护范围当视随附的权利要求所界定为准。
Claims (9)
1.一种光学装置,包括:
一第一导电层;
一第一接面层,配置在该第一导电层上;
一第一光吸收层,配置在该第一接面层上,其中该光吸收层包括多个晶元格,每一所述晶元格包括多个柱状结构,每一所述晶元格的多个所述柱状结构的尺寸不同;
一第二接面层,配置在该光吸收层上;以及
一第二导电层,配置在该第二接面层上;
多个滤波层,每一所述滤波层配置在每一所述晶元格的多个所述柱状结构的一部分上;
其中,每一所述晶元格的多个所述柱状结构的该部分具有多个边带,多个所述边带小于该光吸收层所吸收的一光的一波长范围的一预设波长。
2.如权利要求1所述的光学装置,其中多个所述柱状结构的材料为非晶硅及非晶硅杂质,每一所述晶元格的多个所述柱状结构的数量为至少六个,每一所述柱状结构的尺寸的宽度小于0.5um。
3.如权利要求1所述的光学装置,其中每一所述滤波层包括一多层膜。
4.如权利要求1所述的光学装置,其中每两个所述晶元格的多个所述柱状结构的该部分彼此相邻排列,每一所述晶元格的一折射率呈现一W形变化。
5.如权利要求1所述的光学装置,其中该光吸收层所吸收的该光的该波长范围为450~700nm,且该预设波长为550nm。
6.如权利要求1所述的光学装置,其中每一所述晶元格的多个所述柱状结构的部分的材料为非晶硅及非晶硅杂质,且每一所述晶元格的多个所述柱状结构的另一部分的材料为锗及锗杂质,其中每一所述晶元格的多个所述柱状结构的该另一部分具有多个边带,多个所述边带小于该光吸收层所吸收的一光的一波长范围的一预设波长。
7.如权利要求1所述的光学装置,其中每一所述柱状结构所吸收的一光的一波长随着该柱状结构的尺寸改变而改变,其中当该柱状结构的尺寸为大时,该柱状结构所吸收的该光的该波长较大,且当该柱状结构的尺寸为小时,该柱状结构所吸收的该光的该波长较小。
8.如权利要求1所述的光学装置,其中该第一接面层的材料为一p型非晶硅,且该第二接面层的材料为一n型非晶硅,该第一导电层与该第二导电层的材料为氧化铟锡。
9.如权利要求1所述的光学装置,还包括:
一基板,配置于相对于该第一接面层的该第一导电层的一侧上,其中该基板的材料为一玻璃。
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TW202141770A (zh) | 2021-11-01 |
CN113540272A (zh) | 2021-10-22 |
JP7300428B2 (ja) | 2023-06-29 |
US11355540B2 (en) | 2022-06-07 |
US20210327928A1 (en) | 2021-10-21 |
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