CN113540259A - 简单高效的单结n型单晶硅电池技术 - Google Patents
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Abstract
本发明专利，简单高效的单结N型单晶硅电池技术，是一种工艺简单可靠且产线设备成本极低的单PN结的N型单晶硅光伏电池技术。该工艺简单的单结N型单晶硅太阳能电池，主要由N型单晶硅、正面硼扩散层、正面超薄金属非金属钝化层、正面透明导电减反层和丝网印刷阳极栅层，背面超薄非金属钝化层、背面超薄金属合金层、背面透明导电层和丝网印刷阴极栅层等组成。该电池技术工艺流程主要为：双面制绒清洗、正面硼扩散、刻蚀抛光、正面超薄金属非金属钝化层、背面超薄非金属钝化层、背面超薄金属合金层、中低温退火、正面透明导电减反层、背面透明导电层、正面丝网印刷阳极栅层、背面丝网印刷阴极栅层、低温退火、测试等。其中所有镀膜层以低成本的更环保的磁控溅射等物理镀膜工艺为主。本发明的结构工艺简单的单结N型单晶硅太阳能电池，量产效率≥24%。
Description
技术领域
本发明属新能源、太阳能电池等技术领域，主要涉及一种高效的工艺简单低成本的单结N型晶体硅太阳能电池新产品技术。
背景技术
开发利用太阳能是人类解决能源危机、环境危机的最主要途径。大力开发经济适用的绿色高效的硅基太阳能电池工艺技术，具有重要的现实意义。
当前光伏电池市场，占主导地位的是以P型单晶硅为基础的Perc电池，其应用场景的光电转换效率停滞在23%——23.5%，更高效的是以N型晶体硅为基础的TOPCon电池 和异质结HIT电池，光电转换效率在24%——24.5%水平。但是从实用角度讲，TOPCon电池 和异质结HIT电池技术工艺都存在不少不稳定的因素与工艺过程，技术难点多，同时规模化生产成本较高，1GW的自动化单晶硅电池生产线，TOPCon电池设备成本是Perc电池的2倍以上，异质结HIT电池设备成本是Perc电池的5倍或更高。
本发明以N型单晶硅为基础，借鉴perc电池和pert电池技术工艺的少数突出优点，以单PN结和物理工艺为主，优化整个生产线工艺流程，使本发明的单结N型单晶硅太阳能电池，工艺简单、成本低，且量产效率还可以保持24%或更高，是成本收益比极佳的的单晶硅电池产品。
发明内容
本发明专利，简单高效的单结N型单晶硅电池技术，是一种工艺简单可靠且产线设备成本极低的单PN结的N型单晶硅光伏电池技术，该工艺简单的单结N型单晶硅太阳能电池，主要由N型单晶硅、正面硼扩散层、正面超薄金属非金属钝化层、正面透明导电减反层和丝网印刷阳极栅层，背面超薄非金属钝化层、背面超薄金属合金层、背面透明导电层和丝网印刷阴极栅层等组成。
该电池技术工艺流程主要为：双面制绒清洗、正面硼扩散、刻蚀抛光、正面超薄金属非金属钝化层、背面超薄非金属钝化层、背面超薄金属合金层、中低温退火、正面透明导电减反层、背面透明导电层、正面丝网印刷阳极栅层、背面丝网印刷阴极栅层、低温退火、测试等，其中所有镀膜层以低成本的更环保的磁控溅射等物理镀膜工艺为主。
该电池结构中的正面超薄金属非金属钝化层及背面超薄非金属钝化层、背面超薄金属合金层，均为磁控溅射、电子束蒸镀等物理沉积工艺，厚度0—20nm，并作中低温退火处理。
该电池结构中的正面透明导电减反层、背面透明导电层，由磁控溅射等物理镀膜工艺完成，膜厚度10—200nm。
该电池结构中的正面丝网印刷阳极栅层、背面丝网印刷阴极栅层，均只需低温固化退火处理，其中，正面丝网印刷阳极栅层的阳极栅线浆料为银浆料，背面丝网印刷阴极栅层的阴极栅线浆料可以是银浆料、铝浆料或适度掺杂的银、铝、镍、铜、镁等金属元素的二元或多元合金浆料。
该电池结构中的背面丝网印刷阴极栅层，也可以使用栅形掩膜以磁控溅射合金靶材的物理真空沉积工艺完成。
本发明的单结N型单晶硅太阳能电池，工艺简单、成本低，且量产效率还可以保持24%或更高，是成本收益比极佳的的单晶硅电池产品。
具体实施方法
本发明专利，简单高效的单结N型单晶硅电池技术，是一种工艺简单可靠且产线设备成本极低的单PN结的N型单晶硅光伏电池技术，该工艺简单的单结N型单晶硅太阳能电池，主要由N型单晶硅、正面硼扩散层、正面超薄金属非金属钝化层、正面透明导电减反层和丝网印刷阳极栅层，背面超薄非金属钝化层、背面超薄金属合金层、背面透明导电层和丝网印刷阴极栅层等组成。电池结构中的各子结构层，几乎都是用环保、成熟、低成本的物理工艺完成，其中包括超精细的金属非金属钝化层、超薄金属合金层、透明导电层，都是使用磁控溅射真空镀膜等物理工艺完成，技术工艺简单，产业化成本低工艺相对容易控制与实现。
下面以具体实例进一步说明本发明的实施方法：
以尺寸为186或210的N型单晶硅片为例。先对硅片进行预清洗，然后利用槽式单晶制绒设备进行双面制绒、去离子水清洗、烘干；再用低压扩散炉进行正面硼扩散并退火；紧接着进行表面去BSG刻饰及背面刻蚀抛光；然后用磁控溅射***在10-4Pa真空下依次进行正面6纳米Al2O3钝化层沉积、背面5纳米SiO2薄膜钝化层沉积、背面15纳米厚铝镍镁合金薄膜层沉积、350°C退火处理30min；随后用磁控溅射***在10-3Pa真空下依次进行正面透明导电减反层80纳米厚TCO镀膜、背面透明导电层60纳米厚TCO镀膜；接着依次进行正面用银浆丝网印刷阳极栅层、背面用铝镁铜合金浆料或铝浆料丝网印刷阴极栅层、130°C低温固化退火处理等。
以上所述仅是本发明的具体实施例而已，并非对本发明作任何形式上的限制。本发明的权利要求书及专利说明的所有内容，均属于本发明的保护范围。
Claims (6)
1.一种简单高效的单结N型单晶硅电池技术，其特征是一种工艺简单可靠且产线设备成本极低的单PN结的N型单晶硅光伏电池技术，该工艺简单的单结N型单晶硅太阳能电池，主要由N型单晶硅、正面硼扩散层、正面超薄金属非金属钝化层、正面透明导电减反层和丝网印刷阳极栅层，背面超薄非金属钝化层、背面超薄金属合金层、背面透明导电层和丝网印刷阴极栅层等组成。
2.如权利要求1所述的简单高效的单结N型单晶硅电池技术，其特征在于，该电池技术工艺流程主要为：双面制绒清洗、正面硼扩散、刻蚀抛光、正面超薄金属非金属钝化层、背面超薄非金属钝化层、背面超薄金属合金层、中低温退火、正面透明导电减反层、背面透明导电层、正面丝网印刷阳极栅层、背面丝网印刷阴极栅层、低温退火、测试等，其中所有镀膜层以低成本的更环保的磁控溅射等物理镀膜工艺为主。
3.如权利要求1所述的简单高效的单结N型单晶硅电池技术，其特征在于，该电池结构中的正面超薄金属非金属钝化层及背面超薄非金属钝化层、背面超薄金属合金层，均使用磁控溅射、电子束蒸镀等物理沉积工艺，厚度0—20nm，并作中低温退火处理。
4.如权利要求1所述的工简单高效的单结N型单晶硅电池技术，其特征在于，该电池结构中的正面透明导电减反层、背面透明导电层，由磁控溅射等物理镀膜工艺完成，膜厚度10—200nm。
5.如权利要求1所述的简单高效的单结N型单晶硅电池技术，其特征在于，该电池结构中的正面丝网印刷阳极栅层、背面丝网印刷阴极栅层，均只需低温固化退火处理，其中，正面丝网印刷阳极栅层的阳极栅线浆料为银浆料，背面丝网印刷阴极栅层的阴极栅线浆料可以是银浆料、铝浆料或适度掺杂的银、铝、镍、铜、镁等金属元素的二元或多元合金浆料。
6.如权利要求1所述的简单高效的单结N型单晶硅电池技术，其特征在于，该电池结构中的背面丝网印刷阴极栅层，也可以使用栅形掩膜以磁控溅射合金靶材的物理真空沉积工艺完成。
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