CN113517362B - Integrated photosensitive transistor - Google Patents
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- CN113517362B CN113517362B CN202110773051.8A CN202110773051A CN113517362B CN 113517362 B CN113517362 B CN 113517362B CN 202110773051 A CN202110773051 A CN 202110773051A CN 113517362 B CN113517362 B CN 113517362B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an integrated phototransistor, which integrates a phototransistor, an optical waveguide and a DBR mirror monolithically on a semi-insulating substrate. The optical waveguide has a lower cladding layer formed by a substrate material and an upper cladding layer formed by curing an organic polymer, and the tail end of the optical waveguide is provided with a DBR reflector formed by a semiconductor and an organic polymer insulator, so that the quantum efficiency of the phototransistor is improved, and the basic scientific problem that the bandwidth and the quantum efficiency of the phototransistor are mutually restricted is solved.
Description
Technical Field
The invention relates to the technical field of optical communication and photoelectron, in particular to an integrated phototransistor.
Background
With the continuous increase of wireless communication traffic, mobile communication systems are continuously updated, and 5G communication has become a new trend. The development of wireless communication technology is not separated from the construction of novel infrastructures such as artificial intelligence, industrial Internet, internet of things and the like. An on-board wireless communication system on land and a laser/microwave hybrid satellite communication system on air or at sea are expected to realize high-capacity and high-transmission-rate wireless communication. As a core component in the above two wireless communication systems, a photoelectric conversion device is required to have performances of a broad band (frequency response covering radio frequency to sub-terahertz wave), low power consumption, high quantum efficiency (responsivity), high output power, and the like at the same time. The bandwidth and the output power of the photoelectric conversion device are limited due to the carrier transit time and the space charge effect in the photoelectric conversion device, and the bandwidth and the output power and the bandwidth and the quantum efficiency of the photodetector are mutually limited.
Therefore, how to provide an integrated phototransistor with high compatibility and high performance is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of this, the present invention provides an integrated phototransistor, which is to improve the structure of the existing phototransistor in order to solve the problem of the mutual restriction between the quantum efficiency and the bandwidth of the semiconductor phototransistor in the prior art.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
an integrated phototransistor comprising: a semi-insulating substrate;
an optical waveguide is arranged on the semi-insulating substrate, and a DBR reflector is arranged at the tail end of the optical waveguide; the optical waveguide comprises an optical waveguide upper cladding layer, an optical waveguide core layer and an optical waveguide lower cladding layer from top to bottom in sequence, wherein the optical waveguide lower cladding layer is formed by etching a substrate material, and the optical waveguide lower cladding layer and the optical waveguide core layer have the same structure;
the optical waveguide core layer is also respectively provided with an optical waveguide upper cladding layer and two metal film collecting electrodes, the optical waveguide upper cladding layer is arranged in the middle area, and the two metal film collecting electrodes are respectively arranged at two sides of the tail area of the optical waveguide upper cladding layer;
the width of the optical waveguide upper cladding layer is smaller than that of the optical waveguide core layer, sub-collector layers are arranged on two sides of the optical waveguide upper cladding layer, and a collector layer and a base layer are sequentially arranged above the sub-collector layers from bottom to top, wherein the lengths of the collector layer and the base layer are smaller than that of the sub-collector layers;
the base layer is also respectively provided with an emission layer and two metal film base electrodes, and the two metal film base electrodes are respectively arranged at two sides of the emission layer;
and an emission region contact layer and a metal film emission electrode are sequentially arranged above the emission layer from bottom to top.
Preferably, the optical waveguide upper cladding is formed by curing an organic polymer.
Preferably, the semiconductor device further comprises a buffer layer, wherein the buffer layer is arranged between the semi-insulating substrate and the optical waveguide core layer, the thickness of the buffer layer is 0.05-0.3 μm, and the real part of the refractive index of materials used for all layers between the buffer layer and the base layer is in an increasing trend, so that light is allowed to pass from the optical waveguide to the base layer and then absorbed, and the crystal lattices of all semiconductor materials are matched with the semi-insulating substrate.
Preferably, the thickness of the optical waveguide core layer is 0.5 μm to 3.0 μm, the doping type is donor type, and the doping concentration is 5×10 18 Atoms/cm 3 Up to 2X 10 19 Atoms/cm 3 Between them;
the thickness of the sub-collector layer is 0.2 μm to 0.5 μm, the doping type is donor type, and the doping concentration is 1×10 18 Atoms/cm 3 Up to 3X 10 18 Atoms/cm 3 Between them;
the light incident end of the optical waveguide has a rectangular or tapered geometry in the light incident direction.
Preferably, the collector layer has a thickness of 0.1 μm to1 μm, the doping type is donor type, the doping concentration is 1×10 from one end near the sub-collector 17 Atoms/cm 3 Up to 2X 10 17 Atoms/cm 3 Linearly graded to 1X 10 near one end of the spacer layer (6) 14 Atoms/cm 3 Up to 1X 10 15 Atoms/cm 3 ；
A spacing layer is also arranged between the base layer and the current collecting layer, the spacing layer adopts a component band gap linear or gradient gradual change material which is matched with the semi-insulating substrate in lattice, the corresponding forbidden band width gradually changes from being equal to the collecting layer to being equal to the base layer in linear or gradient, the thickness is 0.03 mu m to 0.05 mu m, and the doping concentration is 1.5 multiplied by 10 in the thickness range of 0.01 mu m to 0.015 mu m near one end of the collecting layer 18 Atoms/cm 3 Is incorporated in a concentration of not higher than 5X 10. Mu.m in a thickness range of about 0.02 μm to 0.035 μm near the base layer 15 Atoms/cm 3 。
Preferably, the material energy gap corresponding to the base layer is smaller than the detected photon energy, the thickness is 0.02 μm to 0.2 μm, the doping type is the acceptor type, and the doping concentration is 1×10 18 Atoms/cm 3 Up to 1X 10 19 Atoms/cm 3 Between them;
the thickness of the emitting layer is 0.1 μm to 1 μm, the doping type is donor type, and the doping concentration is 1×10 from the end near the base layer 16 Atoms/cm 3 Up to 5X 10 17 Atoms/cm 3 Linearly gradually changing to 1×10 near the end of the emitter contact layer 19 Atoms/cm 3 Up to 3X 10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the emitter contact layer is 0.02 μm to 0.06 μm, the doping type is donor type, and the doping concentration is 3×10 or more 19 Atoms/cm 3 。
Preferably, the thickness of the metal film collector is smaller than that of the collector region, and the distance between the metal film collector and the collector region is larger than 0.08 mu m; the thickness of the metal film base electrode is smaller than that of the emitting area, and the distance between the metal film base electrode and the emitting area is larger than 0.05 mu m; the thickness of the metal film emission electrode is more than 0.5 mu m; the sub-collector layer and the collector layer form a collector region, and the emitter layer and the emitter region contact layer form an emitter region.
Preferably, the thickness of the optical waveguide lower cladding layer is 2 μm to 4 μm, and the thickness of the optical waveguide upper cladding layer is 1 μm to 3 μm.
Preferably, the DBR mirror is prepared by photolithography, etching, spin coating of an organic polymer, curing, and the like, thereby realizing monolithic integration; the thickness of the semiconductor constituting the DBR mirror in the incident light direction is equal to nλ/(4n) 1 ) Wherein N is positive odd number, lambda is the wavelength of detected light, N 1 Is the real part of refractive index of the optical waveguide core layer; the thickness of the cured organic polymer constituting the DBR mirror in the direction of incident light is equal to Llambda/(4 n) 2 ) Wherein L is positive odd number, lambda is the wavelength of detected light, n 2 Is the real part of the refractive index of the cured organic polymer; the DBR mirror contains a semiconductor/organic polymer insulator pair number determined by the desired light reflectivity.
According to the technical scheme, compared with the prior art, the invention discloses the phototransistor which is monolithically integrated with the DBR reflector and the waveguide with the lower cladding layer and the organic polymer upper cladding layer. In the designed structure, on one hand, it is proposed to prepare an optical waveguide lower cladding layer by etching with a substrate material and prepare an optical waveguide upper cladding layer by curing with an organic polymer; on the other hand, a DBR mirror composed of a semiconductor and a cured organic polymer insulator was fabricated at the end of the optical waveguide. When the optical fiber is coupled with the designed structure, the optical coupling efficiency and the binding capacity of the optical waveguide to the optical energy can be improved due to the existence of the optical waveguide cladding; after the optical signal is coupled into the optical waveguide, as the real parts of the effective refractive indexes of the optical waveguide core layer, the collector region and the base layer are sequentially increased, a part of the optical signal is absorbed by the base layer, so that the base current is changed, and the change quantity is amplified and output by the transistor. After the part wind-light signal transmitted along the optical waveguide reaches the tail end of the optical waveguide, the part wind-light signal can be reflected by the DBR reflector and passes through the optical waveguide again, so that secondary absorption is realized, and the effective absorption length of the device is improved. Therefore, compared with the common structure under the same condition, the structure provided by the invention can adopt smaller active mesa area to improve the bandwidth and response speed of the device. Therefore, the invention provides a technical scheme for decoupling the mutual restriction relation between the bandwidth and the quantum efficiency of the phototriode, shows a beneficial structure capable of realizing broadband, high quantum efficiency and high output power at the same time, and has great potential for being widely applied to the fields of optical fiber communication, satellite communication, optical signal processing and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an integrated phototransistor according to the present invention;
fig. 2 is a schematic cross-sectional view of an active region in a direction perpendicular to incident light provided by an integrated phototransistor according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention discloses a schematic perspective view of the device shown in fig. 1 and a schematic cross-sectional view of the active region of the device shown in fig. 2 in a direction perpendicular to the light incident direction, and as a specific embodiment, the phototransistor monolithically integrated with the DBR mirror 15 and the waveguide with the lower cladding layer and the organic polymer upper cladding layer of the invention comprises the following epitaxial layers from the bottom layer to the top layer in order: the semi-insulating substrate 1, the buffer layer 2, the collector region contact layer 3, the sub-collector layer 4, the collector layer 5, the spacer layer 6, the base layer 7, the emitting layer 8 and the emitter region contact layer 9, wherein the collector region contact layer 3 is also an optical waveguide core layer, the sub-collector layer 4 is also an optical matching layer, metal film collecting electrodes 12a and 12b are arranged in certain areas on two sides of a collector region on the collector region contact layer, metal film base electrodes 13a and 13b are arranged in certain areas on two sides of an emitter region on the base layer, and a metal film emitting electrode 14 is arranged on the emitter region contact layer. Wherein the sub-collector layer (4), the collector layer (5) and the spacer layer (6) form a collector region.
In addition, the optical waveguide lower cladding 10 formed by etching the substrate material, the optical waveguide upper cladding 11 formed by curing the organic polymer and the optical waveguide core layer 3 form an optical waveguide; at the end of the optical waveguide a DBR mirror 15, consisting of a semiconductor and a cured organic polymer, is monolithically integrated.
The buffer layer in the examples has a thickness of 0.2 μm and the real part of the refractive index of the material used in the epitaxial layer from the buffer layer to the base layer has a tendency to increase in order to allow light to escape from the optical waveguide into the base layer, all of the semiconductor material lattice matching the substrate.
The collector contact layer 3 is also an optical waveguide core layer with a thickness of 1.0 μm, a doping type of donor type and a doping concentration of 1×10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the sub-collector layer 4 was 0.3 μm, the doping type was donor type, and the doping concentration was 2×10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The geometric shape of the light incidence end of the optical waveguide in the light incidence direction is conical; the thickness of the collector layer 5 is 0.3 μm, the doping type is donor type, and the doping concentration is 1×10 from one end near the sub-collector layer 4 17 Atoms/cm 3 Up to 2X 10 17 Atoms/cm 3 Linearly graded to 1X 10 near one end of the spacer layer (6) 14 Atoms/cm 3 Up to 1X 10 15 Atoms/cm 3 。
The spacer layer 6 adopts a component band gap linear or gradient material which is matched with the crystal lattice of the substrate, the corresponding forbidden band width is changed from being equal to the collecting layer 5 to being equal to the base layer 7 in a linear or gradient way, if the linear gradient material is difficult to grow epitaxially, the gradient material is adopted, the thickness is about 0.03 mu m, wherein the doping concentration is 1.5x10 within the thickness range of about 0.01 mu m near one end of the collecting layer 18 Atoms/cm 3 Donor-type impurities of (2)The mass, the concentration of the dopant host type impurity doped in the range of about 0.02 μm thick near the base layer is not higher than 5×10 15 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The material energy gap corresponding to the base layer 7 is smaller than the detected photon energy, the thickness is 0.05 mu m, the doping type is acceptor type, the doping concentration is 2 multiplied by 10 18 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The spacer layer and the base layer are made of materials, layer thickness and doping distribution to smooth conduction band and regulate internal electric field distribution, so that electrons can conveniently transit from the base layer to the collecting layer.
The emissive layer 8 has a thickness of 0.2 μm and a doping type of donor type with a doping concentration of about 1×10 from the end near the base layer 7 17 Atoms/cm 3 The linear taper is about 1 x 10 near the end of emitter contact layer 8 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The emitter contact layer 9 has a thickness of about 0.05 μm and a doping type of donor type with a doping concentration of about 2×10 19 Atoms/cm 3 。
The metal film collectors 12a,12b have a distance of 0.1 μm from the collector region, a thickness of 0.25 μm, a width of 7 μm perpendicular to the direction of incident light, and a length of 6 μm parallel to the direction of incident light; the metal thin film base electrodes 13a,13b were spaced from the emission region by 0.1 μm, the thickness of the metal thin film base electrodes was 0.2 μm, the width perpendicular to the incident light direction was 0.35 μm, and the length parallel to the incident light direction was 6 μm; the thickness of the metal thin film emitter electrode 14 was 1 μm, the width in the direction perpendicular to the incident light was 0.5 μm, and the length in the direction parallel to the incident light was 6 μm.
The thickness of the optical waveguide lower cladding layer 10 is about 3 μm, and the thickness of the optical waveguide upper cladding layer 11 is about 1 μm.
Preparation of semiconductor at the end of optical waveguide with a geometrical width of 7λ/(4n) 1 ) And the geometrical width of the organic insulator is lambda/(4 n) 1 ) The DBR mirror 15 is constructed to contain a semiconductor/organic insulator pair number of 5, where n 1 Is the real part of refractive index, n, of the optical waveguide core layer 2 Is the real part of the refractive index of the cured organic polymer insulator.
The length L2 of the active mesa in the direction of parallel incident light is 6 mu m, and the widths of the emitting region and the collecting region in the direction of normal incident light are 0.5 mu m and 1 mu m respectively; the dimension of the sub-collector in the parallel light incidence direction was 7 μm (L3) longer than that of the collector, and the length of the incidence end of the optical waveguide was 20 μm (L1).
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. An integrated phototransistor comprising: a semi-insulating substrate (1) and a buffer layer (2);
an optical waveguide is arranged on the semi-insulating substrate (1), and a DBR (distributed Bragg reflector) reflecting mirror (15) is arranged at the tail end of the optical waveguide; the optical waveguide comprises an optical waveguide upper cladding layer (11), an optical waveguide core layer (3) and an optical waveguide lower cladding layer (10) from top to bottom in sequence, wherein the optical waveguide upper cladding layer (11) is formed by solidifying an organic polymer, the optical waveguide lower cladding layer (10) is formed by etching a substrate material, and the optical waveguide lower cladding layer (10) and the optical waveguide core layer (3) have the same structure;
the optical waveguide core layer (3) is also respectively provided with an optical waveguide upper cladding layer (11) and two metal film collecting electrodes, the optical waveguide upper cladding layer (11) is arranged in the middle area, and the two metal film collecting electrodes are respectively arranged at two sides of the tail area of the optical waveguide upper cladding layer (11);
the width of the optical waveguide upper cladding layer (11) is smaller than that of the optical waveguide core layer (3), sub-collector layers (4) are arranged on two sides, which are close to the optical waveguide upper cladding layer (11), of the optical waveguide upper cladding layer, a collector layer (5) and a base layer (7) are sequentially arranged above the sub-collector layers (4) from bottom to top, and the lengths of the collector layer (5) and the base layer (7) are smaller than that of the sub-collector layers (4);
the base layer (7) is also respectively provided with an emitting layer (8) and two metal film base electrodes, and the two metal film base electrodes are respectively arranged at two sides of the emitting layer (8);
an emission region contact layer (9) and a metal film emission electrode (14) are sequentially arranged above the emission layer from bottom to top;
the buffer layer (2) is arranged between the semi-insulating substrate (1) and the optical waveguide core layer (3), the thickness of the buffer layer (2) is 0.05-0.3 mu m, the real part of the refractive index of materials used for all layers between the buffer layer (2) and the base layer (7) is in an increasing trend, so that light passes from the optical waveguide to the base layer and is absorbed, and the crystal lattices of all semiconductor materials are matched with the semi-insulating substrate (1);
the thickness of the optical waveguide core layer (3) is 0.5-3.0 μm, the doping type is donor type, and the doping concentration is 5×10 18 Atoms/cm 3 Up to 2X 10 19 Atoms/cm 3 Between them;
the thickness of the sub-collector layer (4) is 0.2-0.5 μm, the doping type is donor type, and the doping concentration is 1×10 18 Atoms/cm 3 Up to 3X 10 18 Atoms/cm 3 Between them; the light incident end of the optical waveguide has a rectangular or tapered geometry in the light incident direction.
2. An integrated phototransistor as claimed in claim 1, characterized in that the collector layer (5) has a thickness of 0.1 μm to 1 μm and is of the donor type and a doping concentration of 1 x 10 from the end adjacent to the sub-collector layer (4) 17 Atoms/cm 3 Up to 2X 10 17 Atoms/cm 3 Linearly graded to 1X 10 near one end of the spacer layer (6) 14 Atoms/cm 3 Up to 1X 10 15 Atoms/cm 3 ；
A spacing layer (6) is further arranged between the base layer (7) and the current collecting layer (5), the spacing layer (6) adopts a component band gap linear or gradient material which is matched with the semi-insulating substrate (1) in a lattice way, the corresponding forbidden band width is gradually changed from being equal to the linear or gradient of the current collecting layer (5) to being equal to the base layer (7), the thickness is 0.03 mu m to 0.05 mu m, wherein the doping concentration is 1.5x10 in the thickness range of 0.01 mu m to 0.015 mu m near one end of the current collecting layer 18 Atoms/cm 3 Is incorporated in a concentration of not higher than 5X 10 in a thickness range of 0.02 μm to 0.035 μm near the base layer 15 Atoms/cm 3 。
3. An integrated phototransistor as claimed in claim 1, wherein the substrate (7) has a material forbidden bandwidth of less than the energy of the detected photons, a thickness of 0.02 μm to 0.2 μm, a doping type of the acceptor type, and a doping concentration of 1 x 10 18 Atoms/cm 3 Up to 1X 10 19 Atoms/cm 3 Between them; the thickness of the emitting layer (8) is 0.1 μm to 1 μm, the doping type is donor type, and the doping concentration is 1×10 from the end near the base layer (7) 16 Atoms/cm 3 Up to 5X 10 17 Atoms/cm 3 Linearly graded to 1 x 10 near the end of the emitter contact layer (9) 19 Atoms/cm 3 Up to 3X 10 19 Atoms/cm 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the emitter contact layer (9) is 0.02 μm to 0.06 μm, the doping type is donor type, and the doping concentration is 3×10 or more 19 Atoms/cm 3 。
4. The integrated phototransistor as recited in claim 1, wherein the metal thin film collector has a thickness less than the collector region thickness and a distance from the collector region greater than 0.08 μm; the thickness of the metal film base electrode is smaller than that of the emitting area, and the distance between the metal film base electrode and the emitting area is larger than 0.05 mu m; the thickness of the metal film emitting electrode (14) is more than 0.5 mu m; wherein the sub-collector layer (4) and the collector layer (5) form a collector region, and the emitter layer (8) and the emitter region contact layer (9) form an emitter region.
5. An integrated phototransistor as claimed in claim 1, wherein the optical waveguide lower cladding layer (10) has a thickness of 2 μm to 4 μm and the optical waveguide upper cladding layer (11) has a thickness of 1 μm to 3 μm.
6. An integrated phototransistor as claimed in claim 1, wherein the DBR mirror (15) is fabricated by photolithography, etching, spin coating of organic polymer, and curing, to achieve monolithic integration; the thickness of the semiconductor constituting the DBR mirror (15) in the direction of incident light is equal to nλ/(4N) 1 ) Wherein N is positive odd number, lambda is the wavelength of detected light, N 1 Is the real part of refractive index of the optical waveguide core layer; the thickness of the cured organic polymer constituting the DBR mirror (15) in the direction of incident light is equal to Llambda/(4 n) 2 ) Wherein L is positive odd number, lambda is the wavelength of detected light, n 2 Is the real part of the refractive index of the cured organic polymer; the DBR mirror (15) contains a semiconductor/organic polymer insulator pair number determined by the desired optical reflectivity.
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| JP2006171157A (en) * | 2004-12-14 | 2006-06-29 | Sony Corp | Optical waveguide device, optical waveguide module, and optoelectric composite device |
| JP2010078882A (en) * | 2008-09-25 | 2010-04-08 | Fuji Xerox Co Ltd | Polymer optical waveguide and method of manufacturing the same |
| CN103754817B (en) * | 2014-01-28 | 2015-10-28 | 华进半导体封装先导技术研发中心有限公司 | Three-dimensional perpendicular interconnection silicon based opto-electronics simultaneous interpretation device and preparation method thereof |
| CN106158998B (en) * | 2016-06-30 | 2017-08-04 | 浙江大学 | A kind of visible ray and near infrared band silicon substrate fiber waveguide integrated photodetector |
| CN110676330B (en) * | 2019-10-14 | 2021-07-13 | 重庆邮电大学 | Low-power-consumption waveguide photodetector with optical isolation between photosensitive table top and N-contact table top |
| CN110931575B (en) * | 2019-10-24 | 2021-05-18 | 重庆邮电大学 | Waveguide photodetector monolithically integrated with DBR cladding and reflector |
| CN111785818B (en) * | 2020-07-10 | 2022-11-01 | 中国科学院半导体研究所 | GaN fundamental waveguide device based on porous lower cladding layer and preparation method and application thereof |
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