CN113506963B - VO 2-based multifunctional filter - Google Patents
VO 2-based multifunctional filter Download PDFInfo
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- CN113506963B CN113506963B CN202110642374.3A CN202110642374A CN113506963B CN 113506963 B CN113506963 B CN 113506963B CN 202110642374 A CN202110642374 A CN 202110642374A CN 113506963 B CN113506963 B CN 113506963B
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- H01P1/203—Strip line filters
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Abstract
The invention belongs to the technical field of microwave frequency band filter design, and particularly provides a VO (voltage-induced volume) based filter 2 The multifunctional filter of (1), comprising: a substrate 1, an input 50 ohm microstrip line 2 and a first-stage impedance matching connected in sequence on the substrateA matching structure to the Nth stage impedance matching structure, an output impedance matching structure 10, and a tunable VO connected to the tail end thereof 2 Branch node pair, adjustable VO 2 The branch node pair comprises adjustable VOs with the same size 2 Upper branch node and adjustable VO 2 And (5) lower branch nodes. All tunable VOs 2 All the adjustable VOs work at the first working temperature 2 The lower branch knot works at a second working temperature; the first working temperature and the second working temperature respectively determine all adjustable VOs 2 Upper branch node and all adjustable VO 2 The conductivity of the lower branch and the change of the conductivity further determine the transmission property of the filter, namely, the multifunctional regulation of the filter is realized: the impedance matching transition structure can be used in a broadband range, and the properties of low-pass filtering and band-stop filtering can be realized.
Description
Technical Field
The invention belongs to the technical field of microwave frequency band filter design, and particularly relates to a VO (voltage of integration) -based filter 2 The multifunctional filter of (1).
Background
In the microwave frequency band, the filter is widely applied to various board-level radio frequency circuits and transceiving components, and has great value in the civil communication field and military application; among them, the microstrip filter is widely used due to its advantages of small size, light weight, wide frequency band, etc. In order to adapt to the communication requirement of multiple frequency bands and reduce the number of filters, the multifunctional filter is an effective solution, and the multifunctional filter can meet the requirements of multiple aspects of a communication system on the premise of not increasing the number of resonators and microstrip branches.
Vanadium dioxide (VO) as phase change material 2 ) Is an oxide with non-metal phase transition characteristic, and has resistance of 0.1-3 × 10 under external stimulation such as heating, light irradiation, and electric stimulation -6 The omega changes and its phase change process is reversible with changes in electrical, optical, magnetic and lattice structures.
Based on this, the invention is based on vanadium dioxide (VO) 2 ) Is/are as followsThe phase change characteristic is designed to obtain a material based on VO 2 The multifunctional filter of (1).
Disclosure of Invention
The invention aims to solve the problems in the prior art and provide a VO-based photovoltaic (VO) 2 The multi-functional filter controls the upper VO and the lower VO respectively 2 The temperature of the branches can be adjusted to enable the device to be in different working states, when the temperatures of the upper branches and the lower branches are lower than the phase change temperature by 68 degrees, the filter is in an impedance matching working state, when one side of the temperatures of the upper branches and the lower branches is lower than the phase change temperature by 68 degrees and one side of the temperatures of the upper branches and the lower branches is higher than the phase change temperature by 68 degrees, the filter is in a band elimination filter working state, and when the temperatures of the upper branches and the lower branches are higher than the phase change temperature by 68 degrees, the filter is in a low-pass filter working state.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
based on VO 2 The multifunctional filter of (1), comprising: substrate 1, input 50-ohm microstrip line 2 and input adjustable VO (voltage VO) arranged on substrate 2 Branch node pair 3, N-level impedance matching structure and N-level adjustable VO 2 A pair of branches and an output impedance matching structure 10; the input 50-ohm microstrip line 2, the first-stage impedance matching structure, the Nth-stage impedance matching structure and the output impedance matching structure 10 are sequentially connected and are positioned on a central line of the substrate; VO with adjustable input 2 Input adjustable VO with same size of branch node pair 2 VO with adjustable upper branch node and input 2 Lower branch node, and input adjustable VO 2 VO with adjustable upper branch node and input 2 The lower branch sections are respectively and vertically connected to the tail end of the input 50 ohm microstrip line; the nth-stage adjustable VO 2 The branch node pairs are composed of n-th-stage adjustable VOs with the same size 2 Upper branch node and nth-level adjustable VO 2 Lower branch node, and nth-stage adjustable VO 2 Upper branch node and nth-stage adjustable VO 2 The lower branch sections are respectively and vertically connected with the tail end of the nth-stage impedance matching structure; n is 1, 2,. and N (N is more than or equal to 4).
Further, the widths of the input 50-ohm microstrip line 2, the first-stage impedance matching structure and the nth-stage impedance matching structure are sequentially increased.
Further, the input is adjustable VO 2 Upper branch node and first-stage adjustable VO 2 Adjustable VO from upper branch node to Nth level 2 The upper branch node works at a first working temperature, and the input is adjustable VO 2 Lower branch node and first-stage adjustable VO 2 Adjustable VO from lower branch node to Nth level 2 The lower branch knot works at a second working temperature; when the first working temperature and the second working temperature are higher than the phase transition temperature, all the VOs are adjustable 2 The branch knot is in a conductor state, and the filter works in a high-low impedance line low-pass filter state; when the first working temperature or the second working temperature is higher than the phase transition temperature, all the VOs can be adjusted 2 Upper branch node or adjustable VO 2 The lower branch is in a conductor state, and the filter works in a band elimination filter state; when the first working temperature and the second working temperature are lower than the phase transition temperature, all the adjustable VOs 2 The branches are in an insulation state, and the filter works in an impedance matching transition structure state.
In terms of working principle:
the invention provides a VO-based 2 In which all tunable VOs 2 All the adjustable VOs work at the first working temperature 2 The lower branch knot works at a second working temperature; VO-based 2 The first working temperature and the second working temperature respectively determine all adjustable VOs 2 Upper branch node and all adjustable VO 2 The conductivity of the lower branch and the change of the conductivity further determine the transmission property of the filter, namely, the multifunctional regulation of the filter is realized: when the first working temperature and the second working temperature are higher than the phase transition temperature (68 ℃), all the adjustable VOs 2 The branch knot is in a conductor state, and the filter works in a high-low impedance line low-pass filter state; when the first working temperature or the second working temperature is higher than the phase transition temperature, all the VOs can be adjusted 2 Upper branch node or adjustable VO 2 The lower branch is in a conductor state, and the filter works in a band elimination filter state; when the first working temperature and the second working temperature are lower than the phase transition temperature, all the adjustable VOs 2 The branches are in an insulation state, and the filter works in an impedance matching transition structure state.
Further, each stage of resistorAnti-matching structure and adjustable VO of each stage 2 The branch pairs are mutually coupled to regulate each VO 2 The length and the width of the branch knot enable the working bandwidth of the filter to be expanded so as to meet the requirement of practical application, and the return loss is better; simultaneously, by controlling adjacent VOs on the same side 2 The distance between the branches enables electromagnetic waves to be coupled with each other, and the in-band flatness and out-of-band rejection capability of the device in a filter state are further improved.
In conclusion, the beneficial effects of the invention are as follows:
the invention is based on metal oxide VO with phase change property 2 The branch knot realizes a multifunctional filter by controlling two working temperatures, can be used as an impedance matching transition structure in a broadband range and can also be used according to VO 2 The temperature control characteristic of the device realizes the properties of low-pass filtering and band-stop filtering through the accurate control of the temperature.
Drawings
Fig. 1 is a top view of the multifunctional filter according to the embodiment of the present invention.
Fig. 2 is a structural side view of the multifunctional filter in the embodiment of the present invention.
FIG. 3 is a diagram illustrating the structure of a multifunctional filter according to an embodiment of the present invention; wherein, 1 is a substrate, 2 is an input 50 ohm microstrip line, and 3 is an input adjustable VO 2 Branch node pair, 4 is first-stage impedance matching structure, and 5 is first-stage adjustable VO 2 Branch node pair, 6 is second-stage impedance matching structure, and 7 is second-stage adjustable VO 2 Branch node pair, 8 is third-stage impedance matching structure, 9 is third-stage adjustable VO 2 And a branch pair 10 is an output impedance matching structure.
Fig. 4 is a simulation curve of the pull-back loss when the multifunctional filter structure is in the low-pass filter state according to the embodiment of the present invention.
Fig. 5 is a simulation curve of insertion loss when the multifunctional filter structure is in a low-pass filter state according to an embodiment of the present invention.
Fig. 6 is a simulation curve of the return loss when the multifunctional filter structure is in the band-stop filter state in the embodiment of the present invention.
Fig. 7 is an insertion loss simulation curve of the multifunctional filter structure in the state of the band-stop filter according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
This embodiment provides a VO-based 2 The multifunctional filter of (1) is configured as shown in fig. 1 to 3, and includes: substrate 1, input 50-ohm microstrip line 2 and input adjustable VO (voltage VO) arranged on substrate 2 Branch node pair 3, first-stage impedance matching structure 4 and first-stage adjustable VO 2 Branch node pair 5, second-stage impedance matching structure 6 and second-stage adjustable VO 2 Branch node pair 7, third-stage impedance matching structure 8 and third-stage adjustable VO 2 A pair of stubs 9 and an output impedance matching structure 10; the input 50-ohm microstrip line 2, the first-stage impedance matching structure 4, the second-stage impedance matching structure 6, the third-stage impedance matching structure 8 and the output impedance matching structure 10 are connected in sequence and are positioned on a central line of the substrate; VO with adjustable input 2 Input-adjustable VO with same size for branch node pair 3 2 VO with adjustable upper branch node and input 2 Lower branch node, and input adjustable VO 2 VO with adjustable upper branch node and input 2 The lower branch sections are respectively and vertically connected with the tail end of the input 50 ohm microstrip line, and the first-stage (or second-stage or third-stage) adjustable VO 2 The branch node pair is a first-stage (or second-stage or third-stage) adjustable VO with the same size 2 Upper branch node and first-stage (or second-stage or third-stage) adjustable VO 2 Lower branch node, and first-stage (or second-stage or third-stage) adjustable VO 2 Upper branch node and first-stage (or second-stage or third-stage) adjustable VO 2 The lower branch nodes are respectively and vertically connected with the tail end of the first-stage (or second-stage or third-stage) impedance matching structure; so that the entire device has a symmetrical structure with respect to the substrate.
In the second stage, it is noted thatFor example, the first end of the impedance matching structure refers to a connection end between the second-stage impedance matching structure and the first-stage impedance matching structure, and the tail end refers to a connection end between the second-stage impedance matching structure and the third-stage impedance matching structure. In addition, according to different working frequency bands required by designers and different requirements on return loss and insertion loss, the impedance matching structure and the corresponding connected adjustable VO 2 The number of levels of the stub pairs, the size (length and width) of the impedance matching structure, and the tunable VO 2 The sizes (length and width) of the middle-upper/lower branches of the branch pairs can be flexibly changed until the requirements are met.
According to the system requirement, the temperature of the device can be changed to make VO 2 The conductive capacity is changed, so that the device is transited from an insulating state to a metal state, and an S parameter transmission matrix is adjustable through accurate temperature control, so that the device is functionally changed from an impedance transition structure to a low-pass filter, a band-stop filter and an equalizer.
Furthermore, in this embodiment, a Rogers RT/duroid 5880(tm) substrate with a thickness of 0.127mm is selected, and the filter structures shown in fig. 1 and 2 are established in a three-dimensional electromagnetic simulation software High Frequency Structure Simulator (HFSS), and the names and characteristics of the structures are shown in the following table. The lengths and the widths of all the branches and the impedance matching structures (micro-strips) can be adjusted according to needs to realize better return loss and lower insertion loss; the final simulation results are shown in fig. 4 to 7.
Table one: VO-based 2 Each structure size of the multifunctional filter
| Name of structure | |
| Substrate | |
| 1 | Length 13.5mm, width 12mm, thickness 0.127 |
| Input | |
| 50 |
Length 2.5mm, width 0.6mm |
| Input-adjustable VO 2 |
Length 3mm, width 0.5mm |
| First stage |
Length 2.8mm, width 0.65mm |
| First-stage adjustable VO 2 |
Length 4mm, width 0.8mm |
| Second stage |
Length 3mm, width 1mm |
| Second-stage adjustable VO 2 |
Length 3.5mm, width 1mm |
| Third stage |
Length 3.2mm, width 1.2mm |
| Third-stage adjustable VO 2 |
Length 3mm, width 1.2mm |
| Output |
Length 2.5mm, width 0.6mm |
VO at the upper and lower sides as shown in FIG. 4 and FIG. 5 2 The simulation return loss curve and the insertion loss curve when all the branches are in the metal state, VO at the moment 2 The bulk conductivity of the branches is 50000siemens/m, and the structure can enable electromagnetic waves of 0-0.5 GHz to pass through without loss at the moment, has good inhibiting effect on high-frequency signals and works in a low-pass filter state; VO at the upper and lower sides as shown in FIG. 6 and FIG. 7 2 The simulated return loss curve and the insertion loss curve of the branch in the insulation state and the metal state respectively, and the VO at the moment 2 The bulk conductivity of the branches is 140siemens/m, and the structure shows band rejection characteristics at the moment, wherein the stopband is 0.5-2.5 GHz; therefore, the VO-based system provided by the invention 2 The multifunctional filter realizes multiple functions in a wide frequency band. VO when the temperature of both sides is 68 ℃ lower than the phase transition temperature 2 The conductivity is 140siemens/m, VO 2 The branch is in an insulation state, and the filter is in an impedance conversion working state at the moment. When the temperature is 68 degrees higher than the phase transition temperature, the filter is in the low-pass filter working state. When the temperature makes one side of the branches at the two sides in a conductor state and one side in an insulation state, the filter is in a working state of the band elimination filter. In conclusion, the multifunctional filter realizes the adjustability of multiple working modes.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. Based on VO 2 The multifunctional filter of (1), comprising: a substrate (1), and an input 50 ohm microstrip line (2) and an input adjustable VO arranged on the substrate 2 Branch node pair (3), N-level impedance matching structure and N-level adjustable VO 2 A pair of stubs, and an output impedance matching structure (10); wherein the input 50 ohm microstrip line (2), the first stage impedance matching structure to the Nth stage impedance matching junctionThe structure and the output impedance matching structure (10) are connected in sequence and are positioned on the central line of the substrate; VO with adjustable input 2 Input adjustable VO with same size of branch node pair 2 VO with adjustable upper branch node and input 2 Lower branch node, and input adjustable VO 2 VO with adjustable upper branch node and input 2 The lower branch sections are respectively and vertically connected to the tail end of the input 50 ohm microstrip line; nth-stage adjustable VO 2 N-th-stage adjustable VO with same branch and knot pair 2 Upper branch node and nth-stage adjustable VO 2 Lower branch node, and nth-stage adjustable VO 2 Upper branch node and nth-stage adjustable VO 2 The lower branch sections are respectively and vertically connected with the tail end of the nth-stage impedance matching structure; n =1, 2,. and N, N is not less than 4;
VO with adjustable input 2 Upper branch node and first-stage adjustable VO 2 Adjustable VO from upper branch node to Nth level 2 The upper branch node works at a first working temperature, and the input is adjustable VO 2 Lower branch node and first-stage adjustable VO 2 Adjustable VO from lower branch node to Nth level 2 The lower branch knot works at a second working temperature; when the first working temperature and the second working temperature are both higher than the phase transition temperature, all the VOs can be adjusted 2 The branches are in a conductor state, and the filter works in a high-low impedance line low-pass filter state; when the first working temperature is higher than the phase transition temperature and the second working temperature is lower than the phase transition temperature, all the adjustable VOs 2 All the tunable VOs with upper branches in conductor state 2 The lower branch is in an insulation state, and the filter works in a band elimination filter state; when the first working temperature is lower than the phase transition temperature and the second working temperature is higher than the phase transition temperature, all the adjustable VOs 2 All the adjustable VOs with the upper branches in an insulating state 2 The lower branch is in a conductor state, and the filter works in a band elimination filter state; when the first working temperature and the second working temperature are both lower than the phase transition temperature, all the VOs can be adjusted 2 The filter is directly in an insulation state and works in an impedance matching transition structure state.
2. VO-based according to claim 1 2 The multifunctional filter is characterized in that the 50 ohm microstrip line (2), the first-stage impedance matching structure and the Nth-stage resistor are inputThe widths of the anti-matching structures increase in sequence.
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