CN113491011A - Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon - Google Patents

Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon Download PDF

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Publication number
CN113491011A
CN113491011A CN202080016808.2A CN202080016808A CN113491011A CN 113491011 A CN113491011 A CN 113491011A CN 202080016808 A CN202080016808 A CN 202080016808A CN 113491011 A CN113491011 A CN 113491011A
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metal
dielectric
image sensor
capacitor
strip
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周雪梅
徐泽
肖�琳
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SZ DJI Technology Co Ltd
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SZ DJI Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

An image sensor (100), comprising: the pixel array comprises a semiconductor substrate (110), a pixel array (120), a metal interconnection area (130) and an optical component (150), wherein the pixel array (120) comprises a photosensitive element (121), and the metal interconnection area (130) comprises a medium (131) and a plurality of metal interconnection layers (132) arranged in parallel in the medium (131); wherein a metal-dielectric-metal capacitor (160) is formed in the metal interconnect region (130) to reflect light towards the light sensitive element (121). The imaging effect can be improved. A method of fabricating the image sensor and an imaging apparatus are also provided.

Description

Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon
Technical Field
The present invention relates to the field of image sensor technology, and in particular, to an image sensor, a method of manufacturing the same, and an imaging device equipped with the same.
Background
Since the rise of back-illuminated (BSI) CMOS image sensors, the development of CMOS image sensors to small size and diversification has been greatly promoted. The back-illuminated technology enables the photosensitive area to be transferred from the front side to the back side of the image sensor, so that metal wiring does not need to avoid the photosensitive area any more, the flexibility of pixel design is improved, the development of the image sensor to smaller and smaller sizes is possible, the filling coefficient of pixels is improved, and the number of metal layers is reduced.
For the back side illumination type image sensor, light needs to be incident to the photosensitive region from the back side, so the silicon substrate needs to be thinned to a certain thickness, which greatly shortens the optical path of the incident light in the silicon substrate, and affects the absorption and conversion efficiency of the photosensitive region to the light, i.e. the quantum efficiency.
Disclosure of Invention
The application provides an image sensor, a manufacturing method thereof and an imaging device with the image sensor.
In a first aspect, the present application provides an image sensor comprising:
a semiconductor substrate;
a pixel array formed within the semiconductor substrate, the pixel array including a photosensitive element capable of receiving light and generating photogenerated carriers;
a metal interconnection region disposed on one side of the semiconductor substrate, the metal interconnection region including a dielectric and a plurality of metal interconnection layers disposed in parallel in the dielectric, the metal interconnection layers being connected to the photosensitive element;
an optical component disposed on the other side of the semiconductor substrate, the optical component being capable of directing light toward the photosensitive element;
wherein a metal-dielectric-metal capacitor is formed in the metal interconnection region to reflect light toward the photosensitive element.
In a second aspect, the present application provides an imaging apparatus carrying any of the above-described image sensors.
In a third aspect, the present application provides a method for fabricating an image sensor, the method comprising:
providing a semiconductor substrate;
forming a pixel array within the semiconductor substrate, the pixel array including a photosensitive element;
forming a metal interconnection area on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection area, wherein the metal interconnection area comprises a dielectric and a plurality of metal interconnection layers arranged in the dielectric in parallel, and the metal interconnection layers are connected to the photosensitive element;
and thinning the other side of the semiconductor substrate and forming an optical component.
The embodiment of the application provides an image sensor, a manufacturing method thereof and an imaging device carrying the image sensor, and the imaging effect can be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure as claimed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an image sensor according to an embodiment of the present application;
FIG. 2 is a schematic diagram of the functional components of an image sensor in one embodiment;
FIG. 3 is a schematic diagram of a pixel in an image sensor in one embodiment;
FIG. 4 is a timing diagram illustrating pixel imaging in an image sensor, according to one embodiment;
FIG. 5 is a schematic diagram of a pixel in an image sensor in another embodiment;
FIG. 6 is a schematic view of the image sensor of FIG. 1 at another angle;
FIG. 7 is a schematic diagram of an image sensor at an angle according to one embodiment;
FIG. 8 is a schematic view of the image sensor of FIG. 7 at another angle;
FIG. 9 is a schematic diagram of a metal-dielectric-metal capacitor according to an embodiment;
FIG. 10 is a schematic diagram of a metal-dielectric-metal capacitor according to another embodiment;
FIG. 11 is a schematic diagram of a metal-dielectric-metal capacitor according to yet another embodiment;
FIG. 12 is a schematic diagram of a metal-dielectric-metal capacitor according to yet another embodiment;
fig. 13 is a schematic flowchart illustrating a method for manufacturing an image sensor according to an embodiment of the present disclosure;
fig. 14 is a schematic structural diagram of an imaging device according to an embodiment of the present application.
Reference numerals: 100. an image sensor; 110. a semiconductor substrate; 120. an array of pixels; 121. a photosensitive element; 1201. a shallow trench isolation region; 130. a metal interconnection region; 1301. a metal line; 131. a medium; 132. a metal interconnection layer; 141. a conveying pipe; 142. a floating diffusion region; 143. a reset tube; 144. a source follower tube; 145. a row gate pipe; 150. an optical component; 151. a color filter; 152. a microlens array; 160. a metal-dielectric-metal capacitor; 161. an electrode; 162. a medium between the electrodes; 1321. a first metal interconnection layer; 1322. a second metal interconnection layer; 1323. a third metal interconnection layer; 1611. a first electrode; 101. a first metal strip; 1612. a second electrode; 102. a second metal strip; 1613. a third electrode; 103. a third metal strip; 104. a switching element;
200. an image sensor; 210. a photosensitive circuit region; 211. a light sensing unit; 201. a photosensitive element; 202. a conveying pipe; 203. a floating diffusion region; 204. a reset tube; 205. a source follower tube; 206. a row gate pipe; 220. a peripheral circuit;
600. an imaging device; 601. an image sensor; 602. a processor; 603. a display screen.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The flow diagrams depicted in the figures are merely illustrative and do not necessarily include all of the elements and operations/steps, nor do they necessarily have to be performed in the order depicted. For example, some operations/steps may be decomposed, combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Fig. 1 is a schematic structural diagram of an image sensor 100. Image sensor 100 includes a semiconductor substrate 110, a pixel array 120, a metal interconnect region 130, and an optical assembly 150.
In some embodiments, as shown in fig. 2, the image sensor 200 may be divided into a photosensitive circuit region 210 and a peripheral circuit 220 according to functional composition, wherein the photosensitive circuit region 210 may include tens of thousands to hundreds of millions of photosensitive units 211, for example, the photosensitive circuit region 210 may be formed by arraying a large number of photosensitive units 211 according to a certain manner. The peripheral circuit 220 is responsible for converting the signal induced by the light sensing unit 211 into a digital signal and reading out the digital signal.
The light sensing units 211 of the image sensor 200 may also be referred to as pixels (pixels). In some embodiments, as shown in fig. 3, the light sensing unit 211 includes a photosensor 201, a transfer Tube (TX)202, a Floating Diffusion (FD)203, a reset tube (RST)204, a source follower tube (SF)205, and a row select tube (SEL) 206.
Wherein the photosensitive elements 201 can also be referred to as photodiodes, the pixel array 120 can be formed by a plurality of photosensitive elements 201 arranged in a certain manner.
In some embodiments, the typical operation timing of the light sensing unit 211 is shown in fig. 4.
Referring to fig. 3 and 4, the photosensitive unit 211 typically operates as follows:
a. a reset stage: the reset tube 204 is opened (i.e., turned on), the row strobe tube 206 is closed (i.e., turned off), the transfer tube 202 is first opened (i.e., turned on), the photo-generated carriers in the photosensitive element 201 are emptied, and then the transfer tube 202 is closed (i.e., turned off);
b. and (3) an exposure stage: the transfer tube 202 is maintained in a closed state (i.e., an off state), and the photosensitive element 201 generates photo-generated carriers under illumination;
c. a signal reading stage: the row gate tube 206 is turned on, then the reset tube 204 is turned off, the floating diffusion region 203 is floated to a high potential, and the reference voltage Vref (i.e., the reference signal) is read at the output terminal (PXD terminal) after stabilization (SHR phase), for example, by setting the read reference voltage enable signal of the peripheral circuit 220 to a high level; next, the transmission tube 202 is opened, the photo-generated carriers in the photosensitive element 201 are poured into the floating diffusion region 203, the potential of the floating diffusion region 203 becomes lower as the photo-generated carriers enter, after the transmission of the photo-generated carriers is finished, the transmission tube 202 is closed, and after stabilization, the sampling hold signal voltage Vsig is read at the output end (SHS stage), for example, the sampling hold signal voltage Vsig can be read by setting the read sampling hold signal voltage enable signal of the peripheral circuit 220 to be at a high level.
Then, the difference Δ V between the reference voltage Vref and the sample-hold signal voltage Vsig is Vref-Vsig, i.e. the voltage difference caused by the incident light signal, and then the difference is converted into a digital signal representing the image information through a subsequent analog-to-digital (AD) conversion circuit. Such as analog-to-digital conversion by peripheral circuit 220.
It should be noted that the voltage output signal includes a sample-and-hold signal and a reference signal. Wherein the sample-and-hold signal is generated from photo-generated carriers.
In some embodiments, the image sensor 200 may include the peripheral circuit 220, and certainly, the peripheral circuit 220 may not be included, for example, functions such as analog-to-digital conversion may be implemented by an additionally mounted peripheral circuit.
As shown in fig. 1, the image sensor 100 includes a semiconductor substrate 110, a pixel array 120, a metal interconnection region 130, and an optical assembly 150.
Illustratively, the semiconductor substrate 110 may include at least one of a silicon substrate, a germanium substrate, and a silicon carbide substrate.
As shown in fig. 1, a pixel array 120 is formed in a semiconductor substrate 110. The pixel array 120 includes a photosensor 121, the photosensor 121 capable of receiving light and generating photogenerated carriers.
Illustratively, several tens of thousands to several hundreds of millions of photosensitive elements 121 are formed on a semiconductor substrate 110, and it will be appreciated that a pixel array 120 is formed on the semiconductor substrate 110.
Illustratively, as shown in fig. 1, adjacent photosensors 121 may be isolated from each other by Shallow Trench Isolation (STI) regions 1201.
In some embodiments, as shown in fig. 1, the metal interconnection region 130 includes a dielectric 131 and a plurality of metal interconnection layers 132 disposed in parallel in the dielectric 131.
Illustratively, the dielectric 131 may include silicon dioxide, silicon nitride, or the like formed by Chemical Vapor Deposition (CVD).
Illustratively, the metal interconnection layer 132 may be formed by exposing and etching a metal layer, such as a copper alloy layer, an aluminum layer, etc., formed by Physical Vapor Deposition (PVD).
Illustratively, the metal interconnection layer 132 may be connected to the photosensor 121 through a metalized via or a tungsten plug filling a contact hole.
Illustratively, as shown in fig. 1 and 5, the metal interconnection layer 132 includes a metal line 1301 connected to the photosensor 121, for example, the metal line 1301 is connected to the photosensor 121 through a tungsten plug filling a contact hole.
In some embodiments, as shown in fig. 1 and 5, the image sensor 100 further includes a floating diffusion region 142 formed in the semiconductor substrate 110, and a transfer tube 141 connecting the photosensitive element 121 and the floating diffusion region 142.
Illustratively, the metal interconnect layer 132 is connected to the photosensor 121 through the floating diffusion region 142 and the transfer tube 141.
Illustratively, the floating diffusion region 142 is located on the semiconductor substrate 110, the floating diffusion region 142 for receiving photo-generated carriers; the transfer tube 141 can controllably connect or disconnect the photosensor 121 and the floating diffusion region 142.
Illustratively, as shown in fig. 5, during the reset phase, the transfer tube 141 is controlled to communicate with the photosensor 121 and the floating diffusion 142. A control signal line such as the transfer transistor 141 receives a high level to turn on the transfer transistor 141 so that the photosensor 121 and the floating diffusion 142 communicate. Illustratively, the metal interconnection layer 132 is further configured to connect the floating diffusion region 142 and the reset tube 143, the floating diffusion region 142 is connected to a reset power source via the turned-on reset tube 143, the photosensitive element 121 and the floating diffusion region 142 are reset by the reset power source, photogenerated carriers in the photosensitive element 121 are cleared, and then the transfer tube 141 is turned off; in the exposure phase, the transmission tube 141 is kept in a closed state, and the photosensitive element 121 generates photon-generated carriers under illumination; in the signal reading stage, the transmission tube 141 may be controlled to communicate the photosensor 121 and the floating diffusion region 142, so that the photogenerated carriers in the photosensor 121 are injected into the floating diffusion region 142, the potential of the floating diffusion region 142 becomes lower as the photogenerated carriers enter, and after the transmission of the photogenerated carriers is completed, the transmission tube 141 is closed.
In some embodiments, the image sensor 100 further includes a source follower transistor 144 and a row strobe transistor 145 for transmitting a voltage signal of the floating diffusion region 142 to peripheral circuits.
Illustratively, the metal interconnect layer 132 is also used to connect the floating diffusion region 142 and the source follower transistor 144, and may also be used to connect the source follower transistor 144 and the row gate transistor 145.
Illustratively, the photosensor 121 is capable of receiving light from the backside of the image sensor 100, and it is understood that the image sensor 100 is a backside illuminated image sensor 100.
Specifically, as shown in fig. 1, the metal interconnection region 130 is disposed on one side of the semiconductor substrate 110, the optical component 150 is disposed on the other side of the semiconductor substrate 110, and the optical component 150 is capable of directing light toward the photosensitive element 121.
Illustratively, the optical assembly 150 is capable of directing light from the back side of the image sensor 100 toward the photosensitive element 121. It is understood that the backside of the image sensor 100 is the side away from the metal interconnect region 130.
Illustratively, as shown in fig. 1, the optical assembly 150 includes a color filter 151 (CF) and/or a micro lens array 152 (ML). The color filter 151 is used to filter light of a specific wavelength, and the microlens array 152 is used to focus the light on the photosensitive element 121.
Illustratively, the optical assembly 150 may further include an anti-reflective coating or the like, wherein the anti-reflective coating can increase the amount of light entering the semiconductor substrate 110.
Specifically, as shown in fig. 1, a metal-dielectric-metal capacitor 160(MOM capacitor) is formed in the metal interconnection region 130 to reflect light toward the photosensor 121.
Illustratively, the metal-dielectric-metal capacitor 160 is used to reflect light impinging on the metal-dielectric-metal capacitor 160 to the photosensor 121.
In some embodiments, the metal-dielectric-metal capacitor 160 is located on a side of the photosensor 121, and the side is a side of the photosensor 121 away from the optical assembly 150.
As shown in fig. 1, light from the back side of the image sensor 100 reaches the photosensitive element 121 through the optical assembly 150, wherein a portion of the light induces photo-generated carriers in the photosensitive element 121, and a portion of the light penetrates through the photosensitive element 121 to reach the metal-dielectric-metal capacitor 160, and the metal-dielectric-metal capacitor 160 can reflect the portion of the light to the photosensitive element 121 to induce photo-generated carriers in the photosensitive element 121.
Illustratively, a portion of the light from the backside of the image sensor 100 may reach the metal-dielectric-metal capacitor 160 via the semiconductor substrate 110, and the metal-dielectric-metal capacitor 160 may reflect the portion of the light toward the light sensitive element 121 to induce photo-generated carriers in the light sensitive element 121.
It can be understood that by forming the metal-dielectric-metal capacitor 160 in the metal interconnection region 130 of the image sensor 100, the optical path length of light from the back side of the image sensor 100 on the semiconductor substrate 110, especially on the photosensitive element 121, is increased, the absorption and conversion efficiency of the photosensitive element 121 on light can be increased, and the quantum efficiency can be improved. On the other hand, due to the addition of the switching element 104 and the metal-dielectric-metal capacitor 160, when the charge of the floating diffusion 142 is too high or too low, the metal-dielectric-metal capacitor 160 can be controlled by the switching element 104 to charge and discharge the floating diffusion 14.
In some embodiments, as shown in fig. 1, the metal-dielectric-metal capacitor 160 includes electrodes 161 formed on the metal interconnect layer 132, and a dielectric 162 between the electrodes 161.
Illustratively, the electrode 161 may be formed by exposing and etching a metal layer formed by physical vapor deposition when forming the metal interconnection layer 132. Therefore, the formation process of the metal-dielectric-metal capacitor 160 is simple and controllable, and mass production is easy to realize.
It can be understood that the electrode 161 of the metal-dielectric-metal capacitor 160 is made of a metal material such as copper alloy, aluminum, etc., and has a good light reflection effect, so as to reflect light toward the photosensitive element 121.
In some embodiments, the metal-dielectric-metal capacitor 160 includes an electrode 161 formed on at least one metal interconnection layer 132, the electrode 161 includes a plurality of metal strips, and a dielectric 131 is filled between different metal strips, i.e., a dielectric 162 between the electrodes 161, wherein one of any two adjacent metal strips may serve as a positive plate and the other may serve as a negative plate. It is understood that the positive and negative electrode plates formed on the respective metal interconnection layers 132 may form a capacitor in a lateral structure in the form of an interdigitated finger (finger).
For example, the metal-dielectric-metal capacitor 160 may be sized according to the size of the photosensitive element 121, for example, the area of the region where the electrode 161 is located on one metal interconnection layer 132 is not smaller than the area of the projection of the photosensitive element 121 on the metal interconnection layer 132, so as to sufficiently reflect light toward the photosensitive element 121.
In some embodiments, as shown in fig. 1, 6-8, the metal-dielectric-metal capacitor 160 includes electrodes 161 respectively formed on at least two metal interconnection layers 132.
Illustratively, as shown in fig. 6 through 8, the metal-dielectric-metal capacitor 160 includes a first electrode 1611 formed on a first metal interconnect layer 1321 and a second electrode 1612 formed on a second metal interconnect layer 1322.
As shown in fig. 6, the first metal interconnection layer 1321 and the second metal interconnection layer 1322 are respectively the second metal interconnection layer 132 and the third metal interconnection layer 132 from top to bottom in the metal interconnection region 130. As shown in fig. 7 and 8, the first metal interconnection layer 1321 and the second metal interconnection layer 1322 are the first metal interconnection layer 132 and the second metal interconnection layer 132 from top to bottom in the metal interconnection region 130, respectively. In some other embodiments, the first metal interconnect layer 1321 and the second metal interconnect layer 1322 are the first metal interconnect layer 132 and the third metal interconnect layer 132 from top to bottom in the metal interconnect region 130, respectively. It is understood that the metal interconnect layer 132 in the metal interconnect region 130 is not limited to four layers, and may be two, three, five or more layers; the electrode 161 of the metal-dielectric-metal capacitor 160 may be formed on the adjacent metal interconnection layer 132, or may be formed on the spaced metal interconnection layer 132; the electrode 161 of the metal-dielectric-metal capacitor 160 may be formed on several metal interconnection layers 132 in the middle of the metal interconnection region 130, or may be formed on the metal interconnection layers 132 at the edge of the metal interconnection region 130.
Illustratively, as shown in fig. 6 to 8, the first electrode 1611 includes a plurality of first metal strips 101 arranged at intervals, and the second electrode 1612 includes a plurality of second metal strips 102 arranged at intervals.
As shown in fig. 1 and 7, a portion of the light irradiates the second electrode 1612 and is reflected by the second metal strip 102 of the second electrode 1612 to the photosensitive element 121. As shown in fig. 6 and 8, a part of the light passes through the space between the second metal strips 102 of the second electrode 1612 to irradiate the first metal strip 101, and is reflected by the first metal strip 101 to the photosensor 121.
In some embodiments, the light reaching the metal-dielectric-metal capacitor 160 may be repeatedly reflected between the metal strips of the multi-level and then directed to the photosensor 121 via the space between the metal strips of a certain level.
For example, the number of layers of the metal interconnection layer 132 forming the electrode 161 may be set and spaced so that the light reaching the metal-dielectric-metal capacitor 160 may be reflected to the photosensor 121 more.
For example, the spacing between the first metal strips 101 and/or the spacing between the second metal strips 102 may be set so that more light reaching the metal-dielectric-metal capacitor 160 may be reflected to the photosensor 121.
It is understood that the capacitance of the vertical structure may also be formed between the metal strips formed in the electrodes 161 of the different metal interconnection layers 132.
Illustratively, as shown in fig. 6 to 9, the first metal strip 101 and the second metal strip 102 have a predetermined angle therebetween. For example, the first metal strip 101 and the second metal strip 102 have an included angle of 60 degrees to 90 degrees therebetween. For example, as shown in fig. 6 to 9, the first metal strip 101 and the second metal strip 102 are perpendicular to each other to form a woven structure. So that more light reaching the metal-dielectric-metal capacitor 160 can be reflected to the light sensitive element 121.
In one embodiment, the discharge rate of the metal-dielectric-metal capacitance 160 formed by the first metal strip 101 and the second metal strip 102 determines the capacitance value. Further, the angle between the first metal strip 101 and the second metal strip 102 is determined according to the capacitance value between the first metal strip 101 and the second metal strip 102. When designing a metal-dielectric-metal capacitor 160 with a larger discharge speed, the capacitance of the metal-dielectric-metal capacitor 160 needs to be larger. In one embodiment, the capacitance value of the metal-dielectric-metal capacitor 160 is increased by increasing the facing area of the capacitor substrate (i.e., the facing area between the first metal strip 101 and the second metal strip 102). It is noted that as the frontal area between the first metal strip 101 and the second metal strip 102 increases, the included angle (i.e., the angle) between the first metal strip 101 and the second metal strip 102 decreases.
In another embodiment, the discharge rate of the metal-dielectric-metal capacitance 160 formed by the first metal strip 101 and the second metal strip 102 determines the capacitance value. The distance between the first metal strip 101 and the second metal strip 102 may be determined in accordance with the capacitance value. When designing a metal-dielectric-metal capacitor 160 with a larger discharge speed, the capacitance of the metal-dielectric-metal capacitor 160 needs to be larger. In one embodiment, the capacitance value of the metal-dielectric-metal capacitor 160 is increased by decreasing the distance of the capacitor substrate (i.e., the distance between the first metal strip 101 and the second metal strip 102). Therefore, in this embodiment, the capacitance value of the metal-dielectric-metal capacitor 160 can be determined by the discharge speed of the metal-dielectric-metal capacitor 160, and the metal interconnection layer where the first metal strip 101 and the second metal strip 102 are located is determined according to the determined capacitance value. In another embodiment, the size and location of the metal-dielectric-metal capacitor 160 is determined according to the size and location of the photosensitive area.
Of course, as shown in fig. 10, the first metal strips 101 and the second metal strips 102 may also be arranged in parallel, and the interval between the second metal strips 102 when the light beam incident at a specific angle passes through the second electrode 1612 may also be irradiated on the first metal strips 101 and reflected by the first metal strips 101 to the photosensitive element 121.
In some embodiments, as shown in fig. 11 and 12, a third metal interconnect layer 1323 is provided between the first metal interconnect layer 1321 and the second metal interconnect layer 1322. For example, the first metal interconnect layer 1321, the second metal interconnect layer 1322, and the third metal interconnect layer 1323 are the first metal interconnect layer, the second metal interconnect layer, and the third metal interconnect layer 132 from top to bottom in the metal interconnect region 130, respectively.
Illustratively, as shown in fig. 11 and 12, the metal-dielectric-metal capacitor 160 further includes a third electrode 1613 formed on the third metal interconnection layer 1323. By providing the triple layer electrode 161, more light reaching the metal-dielectric-metal capacitor 160 can be reflected to the photosensor 121, for example, light passing through the metal-dielectric-metal capacitor 160 can be reduced.
Illustratively, as shown in fig. 11 and 12, when the third metal interconnection layer 1323 is disposed between the first metal interconnection layer 1321 and the second metal interconnection layer 1322, the first electrode 1611 includes a plurality of first metal strips 101 arranged at intervals, the second electrode 1612 includes a plurality of second metal strips 102 arranged at intervals, and the third electrode 1613 includes a plurality of third metal strips 103 arranged at intervals.
Illustratively, the angle between the first metal strip 101 and the third metal strip 103 is 60 degrees to 90 degrees, and the angle between the second metal strip 102 and the third metal strip 103 is 60 degrees to 90 degrees.
For example, as shown in fig. 11 and 12, the first metal strip 101 and the third metal strip 103 are perpendicular to each other, and the first metal strip 101 and the second metal strip 102 are parallel to each other. Forming a three-layer weave structure, light reaching the metal-dielectric-metal capacitor 160 can be reflected more to the photosensor 121.
For example, as shown in fig. 12, the first metal strips 101 and the second metal strips 102 are arranged alternately in the width direction of the first metal strips 101, so that more light reaching the metal-dielectric-metal capacitor 160 is reflected to the photosensor 121.
In some embodiments, as shown in fig. 5, the metal-dielectric-metal capacitor 160 connects the metal line 1301 of the metal interconnection layer 132, so that the capacitance of the image sensor 100 may be improved.
In some embodiments, as shown in fig. 5, one end of the metal-dielectric-metal capacitor 160 is connected to the power source VDD, and the other end is connected to the floating diffusion 142 through a switch element 104. When the switching element 104 is turned on, the metal-dielectric-metal capacitance 160 can be charged by the floating diffusion region 142 or discharged to the floating diffusion region 142.
Illustratively, the switching element 104 may be a DCG (Dual Conversion Gain) transistor, for example, including a polysilicon gate (poly gate) formed on the semiconductor substrate 110.
For example, when the environment of the image sensor 100 is too bright, the floating diffusion region 142 needs to store more photogenerated carriers, the switching element 104 may be controlled to be turned on, so that the metal-dielectric-metal capacitor 160 can store a part of the photogenerated carriers, and the image details in the bright place are prevented from being lost; when the environment of the image sensor 100 is dark, the floating diffusion region 142 needs to store less photo-generated carriers, and the switching element 104 can be controlled to be turned off, so that the photo-generated carriers can be stored in the floating diffusion region 142. So that the dynamic range of the image sensor 100 can be improved.
According to the image sensor provided by the embodiment of the application, the metal-dielectric-metal capacitor is formed in the metal interconnection area of the image sensor, so that the optical path of light from the back surface of the image sensor on the semiconductor substrate, particularly on the photosensitive element, is improved, the absorption and conversion efficiency of the photosensitive element on the light can be improved, and the quantum efficiency is improved.
Referring to fig. 13 in conjunction with the above embodiments, fig. 13 is a schematic flowchart of a method for manufacturing an image sensor according to an embodiment of the present disclosure.
As shown in fig. 13, the manufacturing method includes steps S110 to S140.
Step S110, providing a semiconductor substrate.
For example, a P-type silicon substrate is provided.
Step S120, forming a pixel array in the semiconductor substrate, wherein the pixel array comprises a photosensitive element.
Illustratively, trench isolation is formed on the front side of a silicon substrate; photosensitive elements are then formed between the trench isolations. For example, the photosensitive element is formed between trench isolation regions on the front surface of the silicon substrate by ion implantation, heat treatment, or the like, and a transfer tube, a floating diffusion region, or the like can be formed.
Step S130, forming a metal interconnection area on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection area. The metal interconnection region includes a dielectric and a plurality of metal interconnection layers disposed in parallel in the dielectric, the metal interconnection layers being connected to the photosensitive element.
For example, a metal interconnection region is formed on the photosensitive element, and a metal-dielectric-metal capacitor is formed at the same time, the metal-dielectric-metal capacitor may be formed between different metal interconnection layers of the metal interconnection region, such as the first to third metal interconnection layers, or two to three metal-dielectric-metal capacitors may be disposed in the metal interconnection region according to design requirements, for example, the metal-dielectric-metal capacitor may be simultaneously disposed between the second to third metal interconnection layers, or the first to second metal interconnection layers, or the first to third metal interconnection layers.
And step S140, thinning the other side of the semiconductor substrate and forming an optical assembly.
Illustratively, after the metal interconnection area is formed, the silicon substrate is inverted to make the back surface of the silicon substrate face upwards, corresponding back surface thinning is carried out, and a back surface antireflection coating is grown to manufacture the color filter and the micro-lens array.
For example, the back surface of the silicon substrate can be thinned by corresponding dry and wet processes until the thickness is reduced to two to three microns required by design.
In some embodiments, the metal-dielectric-metal capacitor is formed on a side of the photosensitive element, the side being a side of the photosensitive element away from the optical component, and the metal-dielectric-metal capacitor is configured to reflect light impinging on the metal-dielectric-metal capacitor to the photosensitive element.
In some embodiments, the metal-dielectric-metal capacitor includes an electrode of the metal interconnect layer and the dielectric formed between the electrode.
In some embodiments, the forming a metal interconnection region on one side of the semiconductor substrate and forming a metal-dielectric-metal capacitor in the metal interconnection region includes:
and forming electrodes on at least two metal interconnection layers.
In some embodiments, the forming a metal interconnection region on one side of the semiconductor substrate and forming a metal-dielectric-metal capacitor in the metal interconnection region includes:
forming a first electrode on a first metal interconnection layer when the first metal interconnection layer is formed;
in forming the second metal interconnection layer, a second electrode is formed on the second metal interconnection layer.
In some embodiments, before forming the second metal interconnection layer, further comprising:
and forming a third metal interconnection layer on the side of the first metal interconnection layer far away from the optical component.
In some embodiments, the first electrode comprises a plurality of first metal strips arranged at intervals, and the second electrode comprises a plurality of second metal strips arranged at intervals.
In some embodiments, the first metal strip and the second metal strip have a predetermined angle therebetween.
In some embodiments, the first metal strip and the second metal strip are perpendicular to each other.
In some embodiments, a third electrode is formed at the third metal interconnection layer when the third metal interconnection layer is formed.
In some embodiments, the first electrode comprises a plurality of first metal strips arranged at intervals, the second electrode comprises a plurality of second metal strips arranged at intervals, and the third electrode comprises a plurality of third metal strips arranged at intervals.
In some embodiments, the angle between the first metal strip and the third metal strip is 60 degrees to 90 degrees, and the angle between the second metal strip and the third metal strip is 60 degrees to 90 degrees.
In some embodiments, the first and third metal strips are perpendicular to each other and the first and second metal strips are parallel to each other.
In some embodiments, the first metal strip and the second metal strip are staggered in a width direction of the first metal strip.
In some embodiments, the forming a metal interconnect region on one side of the semiconductor substrate includes:
and forming a metal circuit connected with the photosensitive element on the metal interconnection layer, wherein the metal circuit is connected with the metal-dielectric-metal capacitor.
In some embodiments, the method further comprises:
forming a floating diffusion region in the semiconductor substrate;
forming a transfer tube connecting the photosensitive element and the floating diffusion region on the semiconductor substrate;
forming a switching element connecting the floating diffusion region and the metal-dielectric-metal capacitance.
According to the manufacturing method of the image sensor, the metal-dielectric-metal capacitor is formed in the metal interconnection area of the image sensor, so that the optical path of light from the back of the image sensor on the semiconductor substrate, particularly on the photosensitive element, is improved, the absorption and conversion efficiency of the photosensitive element on the light can be improved, and the quantum efficiency is improved.
Referring to fig. 14 in conjunction with the above embodiments, fig. 14 is a schematic block diagram of an imaging device 600 according to an embodiment of the present application. The imaging device 600 is equipped with the image sensor 601 described above.
In some embodiments, as shown in fig. 14, the imaging device 600 may further include a processor 602, and the processor 602 is configured to process the image data output by the image sensor 601 into a shot that can be presented on the display screen 603.
In some embodiments, as shown in fig. 14, the imaging device 600 may further include a display screen 603, and the processor 602 is configured to process the image data output by the image sensor 601 into a shot that can be presented on the display screen 603.
Illustratively, the imaging device may be a terminal. The terminal may be a terminal device integrating a camera and a display screen, including but not limited to a smart phone, a tablet, a palm computer, a camera, etc. The camera in the terminal can be used for realizing photographing and camera shooting functions, and the display screen can be used for realizing a preview function of a photographed picture, namely, a picture of the current income of the camera is displayed in real time for previewing, so that the effect of a viewfinder is achieved.
For example, the imaging apparatus 600 may be applied to the fields of digital still cameras, cellular phones, monitoring, automobiles, and the like, and may also be applied to the fields of unmanned planes, robots, Virtual Reality (VR), Augmented Reality (AR), and the like.
The specific principle and implementation of the imaging device provided in the embodiment of the present application are similar to those of the image sensor in the foregoing embodiments, and are not described herein again.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It should also be understood that the term "and/or" as used in this application and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
While the invention has been described with reference to specific embodiments, the scope of the invention is not limited thereto, and those skilled in the art can easily conceive various equivalent modifications or substitutions within the technical scope of the invention. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (33)

1. An image sensor, comprising:
a semiconductor substrate;
a pixel array formed within the semiconductor substrate, the pixel array including a photosensitive element capable of receiving light and generating photogenerated carriers;
a metal interconnection region disposed on one side of the semiconductor substrate, the metal interconnection region including a dielectric and a plurality of metal interconnection layers disposed in parallel in the dielectric, the metal interconnection layers being connected to the photosensitive element;
an optical component disposed on the other side of the semiconductor substrate, the optical component being capable of directing light toward the photosensitive element;
wherein a metal-dielectric-metal capacitor is formed in the metal interconnection region to reflect light toward the photosensitive element.
2. The image sensor of claim 1, wherein the metal-dielectric-metal capacitor is located on a side of the photosensitive element away from the optical assembly, and wherein the metal-dielectric-metal capacitor is configured to reflect light impinging on the metal-dielectric-metal capacitor to the photosensitive element.
3. The image sensor of claim 1 or 2, wherein the metal-dielectric-metal capacitance comprises an electrode of the metal interconnect layer and the dielectric formed between the electrode.
4. The image sensor of claim 3, wherein the metal-dielectric-metal capacitor comprises electrodes formed on at least two of the metal interconnect layers, respectively.
5. The image sensor of claim 4, wherein the metal-dielectric-metal capacitance comprises a first electrode formed on a first metal interconnect layer and a second electrode formed on a second metal interconnect layer.
6. The image sensor of claim 5, wherein a third metal interconnect layer is between the first metal interconnect layer and the second metal interconnect layer.
7. The image sensor of claim 5 or 6, wherein the image sensor is configured to detect the image signal
The first electrode comprises a plurality of first metal strips arranged at intervals, and the second electrode comprises a plurality of second metal strips arranged at intervals.
8. The image sensor of claim 7, wherein the first metal strip and the second metal strip have a predetermined angle therebetween.
9. The image sensor of claim 8, wherein the first metal strip and the second metal strip are perpendicular to each other.
10. The image sensor of claim 6, wherein the metal-dielectric-metal capacitor further comprises a third electrode formed on the third metal interconnect layer.
11. The image sensor of claim 10, wherein the first electrode comprises a plurality of first spaced-apart metal strips, the second electrode comprises a plurality of second spaced-apart metal strips, and the third electrode comprises a plurality of third spaced-apart metal strips.
12. The image sensor of claim 11, wherein an angle between the first metal strip and the third metal strip is 60 degrees to 90 degrees, and an angle between the second metal strip and the third metal strip is 60 degrees to 90 degrees.
13. The image sensor of claim 12, wherein the first metal strip and the third metal strip are perpendicular to each other, and the first metal strip and the second metal strip are parallel to each other.
14. The image sensor of claim 13, wherein the first metal strip and the second metal strip are staggered in a width direction of the first metal strip.
15. The image sensor as in any one of claims 1-14, wherein the metal interconnect layer comprises metal lines connecting the photosensitive elements, the metal-dielectric-metal capacitors connecting the metal lines.
16. The image sensor of any one of claims 1-15, further comprising:
a floating diffusion region formed in the semiconductor substrate;
a transfer tube connecting the photosensitive element and the floating diffusion region;
one end of the metal-dielectric-metal capacitor is used for connecting a power supply, the other end of the metal-dielectric-metal capacitor is connected with the floating diffusion region through a switch element, and when the switch element is conducted, the metal-dielectric-metal capacitor can be charged by the floating diffusion region or discharged to the floating diffusion region.
17. An imaging apparatus carrying the image sensor according to any one of claims 1 to 16.
18. A method of fabricating an image sensor, the method comprising:
providing a semiconductor substrate;
forming a pixel array within the semiconductor substrate, the pixel array including a photosensitive element;
forming a metal interconnection area on one side of the semiconductor substrate, and forming a metal-dielectric-metal capacitor in the metal interconnection area, wherein the metal interconnection area comprises a dielectric and a plurality of metal interconnection layers arranged in the dielectric in parallel, and the metal interconnection layers are connected to the photosensitive element;
and thinning the other side of the semiconductor substrate and forming an optical component.
19. The method of claim 18, wherein the metal-dielectric-metal capacitor is formed on a side of the photosensitive element away from the optical assembly, and wherein the metal-dielectric-metal capacitor is configured to reflect light impinging on the metal-dielectric-metal capacitor to the photosensitive element.
20. The method of claim 18 or 19, wherein the metal-dielectric-metal capacitor comprises an electrode of the metal interconnect layer and the dielectric formed between the electrode.
21. The method of claim 20, wherein forming a metal interconnect region on one side of the semiconductor substrate and forming a metal-dielectric-metal capacitor in the metal interconnect region comprises:
and forming electrodes on at least two metal interconnection layers.
22. The method of claim 21, wherein forming a metal interconnect region on one side of the semiconductor substrate and forming a metal-dielectric-metal capacitor in the metal interconnect region comprises:
forming a first electrode on a first metal interconnection layer when the first metal interconnection layer is formed;
in forming the second metal interconnection layer, a second electrode is formed on the second metal interconnection layer.
23. The method of claim 22, further comprising, prior to forming the second metal interconnect layer:
and forming a third metal interconnection layer on the side of the first metal interconnection layer far away from the optical component.
24. The method of claim 22 or 23, wherein the first electrode comprises a plurality of spaced first metal strips and the second electrode comprises a plurality of spaced second metal strips.
25. The method of claim 24, wherein the first metal strip and the second metal strip have a predetermined angle therebetween.
26. The method of claim 25, wherein the first metal strip and the second metal strip are perpendicular to each other.
27. The method of claim 23, wherein a third electrode is formed at the third metal interconnect layer when the third metal interconnect layer is formed.
28. The method of claim 27, wherein the first electrode comprises a plurality of spaced first metal strips, the second electrode comprises a plurality of spaced second metal strips, and the third electrode comprises a plurality of spaced third metal strips.
29. The method of claim 28, wherein the angle between the first metal strip and the third metal strip is 60 degrees to 90 degrees, and the angle between the second metal strip and the third metal strip is 60 degrees to 90 degrees.
30. The method of claim 29, wherein the first metal strip and the third metal strip are perpendicular to each other and the first metal strip and the second metal strip are parallel to each other.
31. The method of claim 30, wherein the first metal strip and the second metal strip are staggered in a width direction of the first metal strip.
32. The method of any of claims 18-31, wherein forming a metal interconnect region on a side of the semiconductor substrate comprises:
and forming a metal circuit connected with the photosensitive element on the metal interconnection layer, wherein the metal circuit is connected with the metal-dielectric-metal capacitor.
33. The method according to any one of claims 18-32, further comprising:
forming a floating diffusion region in the semiconductor substrate;
forming a transfer tube connecting the photosensitive element and the floating diffusion region on the semiconductor substrate;
forming a switching element connecting the floating diffusion region and the metal-dielectric-metal capacitance.
CN202080016808.2A 2020-07-31 2020-07-31 Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon Pending CN113491011A (en)

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