CN113488385B - Gas-ionization type etching process for conductive film - Google Patents
Gas-ionization type etching process for conductive film Download PDFInfo
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- CN113488385B CN113488385B CN202110556165.7A CN202110556165A CN113488385B CN 113488385 B CN113488385 B CN 113488385B CN 202110556165 A CN202110556165 A CN 202110556165A CN 113488385 B CN113488385 B CN 113488385B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
Abstract
The invention discloses a gas-separation type etching process for a conductive film, which belongs to the technical field of etching, and is characterized in that a plurality of gas-separation microspheres are doped into etching ink, a magnetic field is intermittently applied below the conductive film to force the gas-separation microspheres to intermittently extrude the etching ink, so that the etching ink is fully contacted with the conductive film for etching, then the etching ink is heated and dried, and meanwhile, the gas-separation microspheres are triggered to release gas, so that the gas is filled into gaps, the stripping of the etching ink is facilitated, the stripping strength after the etching ink is formed into a film is reduced, magnetic substances can be filled into the gaps of the etching ink along with the release of the gas, then the magnetic field is transferred to the upper part of the conductive film, and under the magnetic attraction effect of a magnetic substance, the uniform multi-point stripping force is generated on the film, the stripping of the film is accelerated, the stripping is simple, the residual phenomenon is not easy to occur, and the damage to the conductive film can be avoided.
Description
Technical Field
The invention relates to the technical field of etching, in particular to a gas-ionization type etching process for a conductive film.
Background
Etching, in english, etch, is a very important step in semiconductor manufacturing processes, microelectronic IC manufacturing processes, and micro-nano manufacturing processes. Is one of the main processes of the patterning (pattern) process associated with photolithography. Etching is actually understood in a narrow sense as photolithographic etching, in which the photoresist is first subjected to a photolithographic exposure process by photolithography and then etched away by other means to remove the portions to be removed. Etching is a process of selectively removing unwanted material from the surface of a silicon wafer by chemical or physical means, with the primary objective being to properly replicate the mask pattern on a gummed silicon wafer. With the development of micro-fabrication technology, etching is a general term for stripping and removing materials by solution, reactive ion or other mechanical means, which is a common name for micro-fabrication.
In the prior art, a method for etching a conductive film by using etching ink to form a conductive circuit appears, and in the method, the etching ink can form a layer of film after etching, so that complicated procedures such as washing and the like can be directly stripped.
However, in the actual operation process, the thickness of the etching ink is only dozens of microns, so that the thickness of the formed film is extremely thin, the phenomenon that the film cannot be completely peeled due to partial breakage is easily caused in the peeling process, a scraper and other means are required to be adopted for mechanical peeling subsequently, the operation difficulty is high, the conductive circuit is easily damaged, and after the thickness of the etching ink is increased, although the breakage phenomenon is not easily caused in the peeling process, the peeling difficulty is increased, and the effective peeling is difficult.
Disclosure of Invention
1. Technical problem to be solved
The invention aims to provide a conducting film gas-separation type etching process, which can be used for doping a plurality of gas-separation microspheres in etching ink, intermittently applying a magnetic field below a conducting film to force the gas-separation microspheres to intermittently extrude the etching ink so that the etching ink is fully contacted with the conducting film for etching, then heating and drying the etching ink, triggering the gas-separation microspheres to release gas, filling the gas into gaps to facilitate the stripping of the etching ink, reducing the stripping strength of the etching ink after film formation, along with the release of the gas, enabling magnetic substances to be fully filled in the gaps of the etching ink, transferring the magnetic field to the upper part of the conducting film, and generating uniform multi-point stripping force on the film under the magnetic attraction effect of magnetic substances so as to accelerate the stripping of the film, so that the stripping is simple, the residual phenomenon is not easy to occur, and the damage to the conducting circuit can be avoided.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A gas-ionization etching process for a conductive film comprises the following steps:
s1, preparing etching ink in advance according to the material of the conductive film, and sequentially dispersing, grinding and filtering the etching ink for later use;
s2, coating etching ink on the conductive film, and then embedding a plurality of gas-ionized microspheres into the etching ink;
s3, intermittently applying a magnetic field on the back of the conductive film to force the gas-ionized microspheres to intermittently extrude the etching ink, so that the etching ink is fully contacted with the conductive film for etching;
s4, removing the pin magnetic field after etching is finished, heating and drying, and triggering the action of releasing gas from the gas-ionized microspheres to fill the gas into the gaps, so that the stripping of the etching ink is facilitated;
and S5, after the etching ink forms a film, transferring the magnetic field to the upper part of the conductive film so as to accelerate the peeling of the film, and completing the manufacturing of the conductive circuit on the conductive film.
Further, the material of the conductive film in the step S1 is an indium tin oxide transparent conductive film.
Further, the etching ink in the step S1 is prepared from the following components in percentage by weight: 20% of organic and inorganic mixed acid liquid, 10% of polyvinyl acetate, 20% of polyvinyl alcohol resin, 13% of inorganic filler, 30% of water and 7% of other auxiliary agents or pigments.
Furthermore, the etching ink in the step S2 is coated by screen printing, the coating thickness is 150-500 μm, although the amount of the etching ink is increased compared with the prior art, the etching ink can not only ensure that the conductive film is fully etched, but also better cooperate with the gas-ionized microspheres to strip the film, and in addition, in the actual etching process, the etching ink on the upper layer can be recycled by a cutter separation method after actually being stripped.
Further, the gas is from microballon including hollow pressure china ink ball, many counter weights must and a plurality of isolation magnetism package, the counter weight must evenly be connected under the hollow pressure china ink ball on the terminal surface, keep apart magnetism package and evenly inlay in hollow pressure china ink ball lower terminal surface, the counter weight must play the effect of counter weight jointly with isolation magnetism package on the one hand, guarantee the gesture of hollow pressure china ink ball, and release gas that can be reasonable, on the other hand can separate hollow pressure china ink ball and avoid direct and conductive film contact, keeps apart magnetism package and plays the shutoff effect to hollow pressure china ink ball, avoids contacting with etching ink in advance.
Furthermore, the counter weight must adopt elastic material to make, and a plurality of counter weights must keep flushing away from a terminal surface of hollow pressure china ink ball, can guarantee that even hollow pressure china ink ball whereabouts and conductive film contact, also can keep original gesture, avoids etching printing ink to the phenomenon of off normal appears in the hollow pressure china ink ball in the process of solidification filming to lead to gaseous release effect not good.
Furthermore, the hollow ink pressing ball is made of a light heat conducting material and is of a hollow structure, powdery sodium bicarbonate is filled in the hollow ink pressing ball, and the sodium bicarbonate can be decomposed after being heated to generate a certain amount of carbon dioxide, so that gaps between the etching ink and the conducting film are filled and expanded, and the membrane is favorably stripped.
Furthermore, keep apart the magnetism package and include invagination membrane, hot melt piece and a plurality of magnetic particle, invagination membrane inlays in hollow pressure ink ball inner, hot melt piece is connected in invagination membrane outer end, magnetic particle inlays in hot melt piece, and hot melt piece can melt after receiving the heating to realize the intercommunication of hollow pressure ink ball internal environment and etching ink, the gaseous of producing in the hollow pressure ink ball can be released to gap department through the invagination membrane, and blows magnetic particle and distribute in step, helps cooperating with subsequent magnetic field, accelerates peeling off of membrane.
Further, the invagination membrane is made of a waterproof and breathable material, the hot melting block is made of a hot melting material, and the melting point of the hot melting block is lower than the heating temperature in the step S4.
Further, hollow pressure china ink ball upside is equipped with and covers the china ink scale, cover the china ink scale and press and be connected with many evenly distributed's elasticity wire drawing between the china ink ball with the hollow, can cover the mode of etching printing ink through covering the china ink scale, utilize the wholeness of covering the china ink scale, be difficult for appearing the phenomenon that the single-point atress is too big and excessively buckle and split when the membrane is peeled off, and when hollow pressure china ink ball reciprocated under the effect in intermittent type nature magnetic field, also can act on and cover the china ink scale and carry out whole extrusion to etching printing ink, etching effect is better, and utilize the cohesion between membrane and the lid china ink scale when peeling off, also can improve the effect of peeling off of membrane.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) This scheme can be through doping a plurality of gas from the microballon in etching printing ink, and apply magnetic field at the conducting film below intermittent type nature, force gas to extrude etching printing ink from microballon intermittent type nature, make etching printing ink and conducting film fully contact and etch, then heat the stoving to etching printing ink, trigger gas simultaneously and leave the action of microballon release gas, make gas filling help the peeling off of etching printing ink in to the gap, reduce the peeling strength behind the etching printing ink film, along with gaseous release, magnetic substance also can be filled in the gap of etching printing ink, shift to the conducting film top again with magnetic field, rely on under the magnetic attraction to magnetic substance, thereby produce even multiple spot peel force to the membrane, the peeling off of accelerating film, not only peel off simply, the difficult residual phenomenon that appears, can avoid causing the damage to the conducting wire simultaneously.
(2) The air-separated microsphere comprises a hollow ink pressing ball, a plurality of balance weights and a plurality of isolation magnetic packages, wherein the balance weights are uniformly connected to the lower end face of the hollow ink pressing ball, the isolation magnetic packages are uniformly embedded in the lower end face of the hollow ink pressing ball, the balance weights are required to play a role of balance weights together with the isolation magnetic packages on the one hand, the posture of the hollow ink pressing ball is guaranteed, gas can be reasonably released, on the other hand, the hollow ink pressing ball can be isolated to avoid direct contact with a conductive film, the isolation magnetic packages play a role in plugging the hollow ink pressing ball, and the contact with etching ink in advance is avoided.
(3) The counter weight must adopt elastic material to make, and a plurality of counter weights must keep flushing away from a terminal surface of hollow pressure china ink ball, can guarantee that the hollow pressure china ink ball even the whereabouts contacts with the conducting film, also can keep original gesture, avoids etching printing ink to press china ink ball to appear the off normal phenomenon in the cavity in the process of solidification filming to lead to gaseous release effect not good.
(4) The hollow ink pressing ball is made of light heat conducting materials and is of a hollow structure, powdery sodium bicarbonate is filled in the hollow ink pressing ball, the sodium bicarbonate can be decomposed after being heated to generate a certain amount of carbon dioxide, and therefore filling expansion is carried out between gaps between etching ink and a conducting film, and stripping of the film is facilitated.
(5) Keep apart the magnetism package including the invagination membrane, hot melt piece and a plurality of magnetic particle, the invagination membrane is inlayed in hollow pressure ink ball inner, the hot melt piece is connected in the invagination membrane outer end, magnetic particle inlays in the hot melt piece, the hot melt piece can melt after receiving the heating, thereby realize the intercommunication of hollow pressure ink ball internal environment and etching printing ink, the gas that produces in the hollow pressure ink ball can be released to gap department through the invagination membrane, and blow magnetic particle and distribute in step, help cooperating with subsequent magnetic field, strip off of membrane with higher speed.
(6) Hollow pressure china ink ball upside is equipped with the lid china ink scale, be connected with many evenly distributed's elasticity wire drawing between lid china ink scale and the hollow pressure china ink ball, can cover the mode of etching printing ink through the lid china ink scale, utilize the wholeness of lid china ink scale, be difficult for appearing the too big phenomenon that excessively buckles and split when the membrane is peeled off, and when the hollow pressure china ink ball reciprocated under the effect of intermittent type nature magnetic field, also can act on the lid china ink scale and carry out the whole extrusion to etching printing ink, etching effect is better, and utilize the cohesion between membrane and the lid china ink scale when peeling off, also can improve the effect of peeling off of membrane.
Drawings
FIG. 1 is a schematic flow diagram of the present invention;
FIG. 2 is a schematic structural diagram of an airborne microsphere of the present invention;
FIG. 3 is a schematic structural view of the hollow ink-pressing ball in a normal state;
FIG. 4 is a schematic view of the structure at A in FIG. 3;
FIG. 5 is a schematic structural view of the hollow ink-pressing ball of the present invention in a heated state;
FIG. 6 is a schematic structural diagram of an aerosol microsphere of the present invention comprising ink flakes.
The reference numbers in the figures illustrate:
1 hollow ink pressing ball, 2 weight whiskers, 3 isolation magnetic bag, 31 invagination film, 32 hot melt block, 33 magnetic particles, 4 ink covering scales and 5 elastic wire drawing.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is to be understood that the embodiments described are merely exemplary embodiments, rather than exemplary embodiments, and that all other embodiments may be devised by those skilled in the art without departing from the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Example 1:
referring to fig. 1, a conductive film gas-ionization type etching process includes the following steps:
s1, preparing etching ink in advance according to the material of a conductive film, and sequentially dispersing, grinding and filtering the etching ink for later use;
s2, coating etching ink on the conductive film, and then embedding a plurality of gas-ionized microspheres into the etching ink;
s3, intermittently applying a magnetic field on the back of the conductive film to force the gas-ionized microspheres to intermittently extrude the etching ink, so that the etching ink is fully contacted with the conductive film for etching;
s4, removing the pin magnetic field after etching is finished, heating and drying, and triggering the action of releasing gas from the gas-ionized microspheres to fill the gas into the gaps, so that the stripping of the etching ink is facilitated;
and S5, after the etching ink forms a film, transferring the magnetic field to the upper part of the conductive film so as to accelerate the peeling of the film, and completing the manufacture of the conductive circuit on the conductive film.
In step S1, the conductive film is made of an indium tin oxide transparent conductive film.
The etching ink in the step S1 is prepared from the following components in percentage by weight: 20% of organic and inorganic mixed acid liquid, 10% of polyvinyl acetate, 20% of polyvinyl alcohol resin, 13% of inorganic filler, 30% of water and 7% of other auxiliary agents or pigments.
In the step S2, the etching ink is coated in a screen printing mode, the coating thickness is 150-500 mu m, although the use amount is increased compared with the prior art, the conductive film can be fully etched, the film can be better stripped by matching with the gas-separation microspheres, and in addition, in the actual etching process, the etching ink on the upper layer can be recycled in a cutter separation mode after being actually stripped.
Please refer to fig. 2, the air-separated microsphere includes a hollow ink pressing ball 1, a plurality of balance weights 2 and a plurality of isolation magnetic packs 3, the balance weights 2 are uniformly connected to the lower end face of the hollow ink pressing ball 1, the isolation magnetic packs 3 are uniformly embedded in the lower end face of the hollow ink pressing ball 1, the balance weights 2 and the isolation magnetic packs 3 jointly play a role of balance weights on one hand, guarantee the posture of the hollow ink pressing ball 1, gas can be reasonably released, on the other hand, the hollow ink pressing ball 1 can be isolated from being directly contacted with a conductive film, the isolation magnetic packs 3 play a role of blocking the hollow ink pressing ball 1, and the contact with etching ink in advance is avoided.
The counter weight must 2 adopts elastic material to make, and a plurality of counter weights must 2 keep flushing away from a terminal surface of hollow pressure china ink ball 1, can guarantee that the hollow pressure china ink ball 1 even the whereabouts contacts with the conducting film, also can keep original gesture, avoids etching printing ink to the eccentric phenomenon appears in the hollow pressure china ink ball 1 of solidification film forming's in-process to lead to gaseous release effect not good.
Referring to fig. 3, the hollow ink-pressing ball 1 is made of a light heat-conducting material and is made into a hollow structure, and the hollow ink-pressing ball 1 is filled with powdered sodium bicarbonate, which is decomposed after being heated to generate a certain amount of carbon dioxide, so that the gap between the etching ink and the conductive film is filled and expanded, which is beneficial to peeling the film.
Referring to fig. 4-5, the isolation magnetic package 3 includes an invagination film 31, a thermal fuse block 32 and a plurality of magnetic particles 33, the invagination film 31 is embedded in the inner end of the hollow ink pressing ball 1, the thermal fuse block 32 is connected to the outer end of the invagination film 31, the magnetic particles 33 are embedded in the thermal fuse block 32, the thermal fuse block 32 is melted after being heated, so as to communicate the environment inside the hollow ink pressing ball 1 with the etching ink, the gas generated inside the hollow ink pressing ball 1 can be released to the gap through the invagination film 31, and the magnetic particles 33 are blown to be distributed synchronously, which is helpful for matching with the subsequent magnetic field and accelerating the peeling of the film.
The invagination film 31 is made of waterproof and breathable material, the hot melting block 32 is made of hot melting material, and the melting point of the hot melting block 32 is lower than the heating temperature in the step S4.
Example 2:
referring to fig. 6, an ink covering scale 4 is disposed on the upper side of the hollow ink pressing ball 1, a plurality of elastic drawn wires 5 which are uniformly distributed are connected between the ink covering scale 4 and the hollow ink pressing ball 1, and the etching ink can be covered by the ink covering scale 4, so that the film is not prone to breaking due to excessive single-point stress when being peeled, and the hollow ink pressing ball 1 can integrally extrude the etching ink by acting on the ink covering scale 4 when moving up and down under the action of an intermittent magnetic field, thereby achieving better etching effect, and improving the peeling effect of the film by using the binding force between the film and the ink covering scale 4 when being peeled.
According to the invention, a plurality of gas-separation microspheres are doped into etching ink, a magnetic field is intermittently applied below a conductive film, the gas-separation microspheres are forced to intermittently extrude the etching ink, so that the etching ink is fully contacted with the conductive film for etching, then the etching ink is heated and dried, and simultaneously the action of releasing gas by the gas-separation microspheres is triggered, so that the gas is filled into gaps to facilitate the stripping of the etching ink, the stripping strength of the etching ink after the etching ink is formed into a film is reduced, along with the release of the gas, magnetic substances can also be filled into the gaps of the etching ink, then the magnetic field is transferred above the conductive film, and under the magnetic attraction effect of the magnetic substances, a uniform multi-point stripping force is generated on the film, the stripping of the film is accelerated, the stripping is simple, the residual phenomenon is not easy to occur, and the damage to the conductive circuit can be avoided.
The above are merely preferred embodiments of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should also be able to cover the technical scope of the present invention by the equivalent or modified embodiments and the modified concepts of the present invention.
Claims (10)
1. A gas-ionization type etching process for a conductive film is characterized in that: the method comprises the following steps:
s1, preparing etching ink in advance according to the material of the conductive film, and sequentially dispersing, grinding and filtering the etching ink for later use;
s2, coating etching ink on the conductive film, and then embedding a plurality of gas-ionized microspheres into the etching ink;
s3, intermittently applying a magnetic field to the back of the conductive film to force the gas ionization microspheres to intermittently extrude the etching ink so that the etching ink is fully contacted with the conductive film for etching;
s4, removing the pin magnetic field after etching is finished, heating and drying, and triggering the action of releasing gas from the gas-ionized microspheres to fill the gas into the gaps, so that the stripping of the etching ink is facilitated;
and S5, after the etching ink forms a film, transferring the magnetic field to the upper part of the conductive film so as to accelerate the peeling of the film, and completing the manufacture of the conductive circuit on the conductive film.
2. The conductive film vapor-ionization etching process according to claim 1, wherein: the conductive film in step S1 is made of an indium tin oxide transparent conductive film.
3. The conductive film gas-ionization type etching process according to claim 1, wherein: the etching ink in the step S1 is prepared from the following components in percentage by weight: 20% of organic and inorganic mixed acid liquid, 10% of polyvinyl acetate, 20% of polyvinyl alcohol resin, 13% of inorganic filler, 30% of water and 7% of other auxiliary agents or pigments.
4. The conductive film gas-ionization type etching process according to claim 1, wherein: and in the step S2, the etching ink is coated in a screen printing mode, and the coating thickness is 150-500 mu m.
5. The conductive film vapor-ionization etching process according to claim 1, wherein: the air-separation microsphere comprises a hollow ink pressing ball (1), a plurality of balance weights (2) and a plurality of isolation magnetic packages (3), wherein the balance weights (2) are uniformly connected to the lower end face of the hollow ink pressing ball (1), and the isolation magnetic packages (3) are uniformly embedded in the lower end face of the hollow ink pressing ball (1).
6. The conductive film gas-ionization etching process according to claim 5, wherein: the counterweight whiskers (2) are made of elastic materials, and one end face, far away from the hollow ink pressing ball (1), of the counterweight whiskers (2) is kept flush.
7. The conductive film gas-ionization type etching process according to claim 5, wherein: the hollow ink pressing ball (1) is made of light heat conduction materials and is of a hollow structure, and powdery sodium bicarbonate is filled in the hollow ink pressing ball (1).
8. The conductive film gas-ionization etching process according to claim 5, wherein: the isolating magnetic bag (3) comprises an invagination film (31), a hot melting block (32) and a plurality of magnetic particles (33), wherein the invagination film (31) is embedded at the inner end of the hollow ink pressing ball (1), the hot melting block (32) is connected with the outer end of the invagination film (31), and the magnetic particles (33) are embedded in the hot melting block (32).
9. The conductive film vapor-ionization etching process according to claim 8, wherein: the invagination membrane (31) is made of a waterproof and breathable material, the hot melting block (32) is made of a hot melting material, and the melting point of the hot melting block (32) is lower than the heating temperature in the step S4.
10. The conductive film gas-ionization type etching process according to claim 5, wherein: the hollow ink pressing ball is characterized in that an ink covering scale (4) is arranged on the upper side of the hollow ink pressing ball (1), and a plurality of elastic drawn wires (5) which are uniformly distributed are connected between the ink covering scale (4) and the hollow ink pressing ball (1).
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