CN113471381B - OLED device and OLED lighting device - Google Patents
OLED device and OLED lighting device Download PDFInfo
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- CN113471381B CN113471381B CN202110675841.2A CN202110675841A CN113471381B CN 113471381 B CN113471381 B CN 113471381B CN 202110675841 A CN202110675841 A CN 202110675841A CN 113471381 B CN113471381 B CN 113471381B
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- 239000010410 layer Substances 0.000 claims abstract description 85
- 230000003405 preventing effect Effects 0.000 claims abstract description 28
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000002346 layers by function Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000002265 prevention Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000002309 gasification Methods 0.000 abstract description 2
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an OLED device and an OLED lighting device, wherein the OLED device comprises a substrate, a first electrode layer, an organic functional layer and a second electrode layer which are sequentially arranged on the substrate, and also comprises a plurality of isolation posts arranged on the first electrode layer, wherein the second electrode layer is partitioned by the isolation posts to form a plurality of conductive areas and a plurality of relatively independent sub-luminous areas positioned between adjacent conductive areas; the isolation column used for limiting the edge of the sub-luminous area is provided with a notch, the notch is covered by the second electrode layer to form a short-circuit preventing connection structure, and the sub-luminous area is connected with the conductive area through the short-circuit preventing connection structure. The OLED device can be applied to an OLED lighting device. According to the invention, the cathode side of the OLED device is provided with the short-circuit prevention structure, the cathode layer is broken through organic gasification, the fusing temperature is low, the influence on the peripheral film layer is small, the short-circuit inhibition effect can be well realized, and the mass production of the OLED lighting device is better realized.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an OLED device and an OLED lighting device.
Background
An OLED is a device for generating electroluminescence by utilizing a multi-layer organic film structure, and the basic structure is that a layer of organic luminescent material with the thickness of tens of nanometers is manufactured on Indium Tin Oxide (ITO) glass to be used as a luminescent layer, and a layer of metal electrode with a low work function is arranged above the luminescent layer to form a sandwich structure. The manufacturing is simple and only requires a low driving voltage. When the OLED is applied to illumination, the OLED has the advantages of light weight, thinness, uniform light source distribution, flexibility, multicolor and the like, and overcomes the defects of large size, rigidity and the like of traditional illumination and LED illumination. Short circuits are a significant cause of affecting the yield of OLED lighting panels. The existing short-circuit prevention structure is often provided with a corresponding structure at the anode side, and a fusing mechanism is adopted to realize the short-circuit prevention of OLED illumination. However, the whole preparation is complex, and at the same time, the fusing of the anode side can damage the whole OLED structure to affect the upper structure due to the high temperature of the anode, so that further short circuit can be caused.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides an OLED device and an OLED lighting device.
The aim of the invention is achieved by the following technical scheme:
the OLED device comprises a substrate, a first electrode layer, an organic functional layer and a second electrode layer which are sequentially arranged on the substrate, and is characterized by further comprising a plurality of isolation columns arranged on the first electrode layer, wherein the second electrode layer is partitioned by the isolation columns to form a plurality of conductive areas and a plurality of relatively independent sub-luminous areas positioned between adjacent conductive areas; the isolation column used for limiting the edge of the sub-luminous area is provided with a notch, the notch is covered by the second electrode layer to form a short-circuit preventing connection structure, and the sub-luminous area is connected with the conductive area through the short-circuit preventing connection structure.
Preferably, an insulating layer is disposed on the first electrode layer corresponding to the isolation column and the short circuit preventing connection structure, and the isolation column is disposed on the insulating layer.
Preferably, the conductive regions are correspondingly disposed on the insulating layer.
Preferably, a metal mesh layer is disposed on the first electrode layer, and the insulating layer coats the metal mesh layer.
Preferably, the plurality of conductive areas are distributed in a strip-shaped parallel interval or grid shape.
Preferably, the first electrode layer is an ITO electrode layer, and the second electrode layer is an Ag electrode layer.
Preferably, the width of the short-circuit prevention connection structure is 10-50 μm.
Preferably, the thickness of the second electrode layer is >400nm.
Preferably, the short circuit preventing connection structure is a straight line structure, a broken line structure or a curve structure.
An OLED lighting device comprising an OLED device as described in any of the above.
The beneficial effects of the invention are as follows: the cathode side of the OLED device is provided with the short-circuit prevention structure, the cathode layer is broken through organic gasification, the fusing temperature is low, the influence on the peripheral film layer is small, the short-circuit inhibition effect can be well realized, and the mass production of the OLED lighting device is better realized.
Drawings
Fig. 1: the invention is a schematic structural diagram.
Fig. 2: the position structure between the conductive area and the sub-luminous area is schematically shown.
Fig. 3: the OLED device of the present invention is shown in cross-section at the anti-shorting structure.
The organic light-emitting diode comprises a first electrode layer 1, an organic functional layer 2, a second electrode layer 3, a 32-sub light-emitting area, a 31 short-circuit prevention connection structure, a 4-conducting area, a 5-isolation column, a 6-insulating layer and a 7-metal grid layer.
Detailed Description
The following embodiments specifically explain the technical solution of the present invention, and the present invention discloses an OLED device, as shown in fig. 1-2, including a substrate (not illustrated in the drawings) for supporting the entire OLED device, where a first electrode layer 1, an organic functional layer 2, and a second electrode layer 3 are sequentially disposed on the substrate. In this embodiment, the first electrode layer 1 is an ITO electrode layer, and the first electrode layer 1 may be another metal layer. The second electrode layer 3 is an Ag electrode layer. In order to improve the light emitting uniformity of the OLED device, the thickness of the second electrode layer 3 is >400nm.
The first electrode layer 1 is provided with a plurality of isolation columns 5, the isolation columns 5 isolate the second electrode layer 3 from the organic functional layer 2, and the second electrode layer 3 is isolated to form a plurality of conductive areas 4 and a plurality of relatively independent sub-light-emitting areas 32 between the adjacent conductive areas 4. The conductive areas 4 are distributed in a strip-shaped parallel interval or grid shape, and the conductive areas 4 are electrically connected with the power supply cathode. The isolation column 5 is generally made of insulating inorganic materials (such as silicon nitride, silicon carbide and silicon oxide), organic polymer materials (such as PI, polytetrafluoroethylene and the like), photoresist and the like.
The isolation pillars 5 defining the edges of the sub-light emitting regions 32 are provided with notches covered by the second electrode layer 3 to form short-circuit preventing connection structures 31, and the sub-light emitting regions 32 are connected with the conductive regions 4 through the short-circuit preventing connection structures 31. The width of the short circuit prevention connection structure 31 is 10-50 μm. The sub-light emitting regions 32 are not limited to a specific shape, and may be polygonal or triangular. In this embodiment, the cross section of the sub-light emitting area 32 is preferably quadrangular, and the specific shape and structure of the short circuit preventing connection structure 31 can be adjusted as required.
An insulating layer 6 is disposed on the first electrode layer 1 corresponding to the isolation column 5 and the short circuit preventing connection structure 31, the isolation column 5 is disposed on the insulating layer 6, and the conductive region 4 is disposed on the insulating layer 6. The section of the isolation column 5 is of a rectangular structure or an inverted trapezoid structure, so that the isolation effect of the isolation column 5 is better exerted, and mass production is better realized.
When the electric power reaches a suitable voltage, the charges in the first electrode layer 1 and the second electrode layer 3 combine in the light emitting layer to generate light. When a local short-circuit point appears in a certain sub-light-emitting area 32 in the OLED device, the current flowing through the point increases rapidly, that is, the current of the short-circuit preventing connection structure 31 correspondingly connected with the sub-light-emitting area 32 increases rapidly, and the temperature of the short-circuit preventing connection structure 31 rises rapidly due to the narrower width and the larger resistance of the short-circuit preventing connection structure 31, so that the organic functional layer in the corresponding area expands and gasifies, thereby breaking the short-circuit preventing connection structure 31 to cause open circuit, and thus inhibiting short circuit. This mode has little influence on the peripheral film layer, and only affects the organic functional layer and the second electrode layer 3. The approach of the present invention is low relative to the temperatures required by fusing at the anode side and does not affect other structures of the OLED device causing further shorting.
In this embodiment, the short-circuit preventing connection structure 31 is a straight line structure, and in other embodiments, the short-circuit preventing connection structure 31 may be a broken line structure or a curved line structure, and when the short-circuit preventing connection structure 31 is a curved line structure or a broken line structure, the current path is longer than that of a straight line structure, the corresponding resistance is increased, the heating capacity is further improved during short-circuit, and the short-circuit preventing capacity is also enhanced.
In particular, after the short-circuit preventing connection structure 31 breaks, the organic functional layer 2 at the corresponding part is gasified, so that the residual part of the short-circuit preventing connection structure 31 may overlap the first electrode layer 1 to cause further short-circuit of the device, and by arranging the insulating layer 6, the short-circuit preventing connection structure 31 breaks and overlaps the insulating layer 6, thereby avoiding further short-circuit of the device and ensuring the short-circuit preventing effect.
Referring to fig. 3, fig. 3 is a cross-sectional view of fig. 1 at the short-circuit preventing structure, in order to further improve the uniformity of light emission of the OLED device, a metal mesh layer 7 is disposed on the first electrode layer 1, and the insulating layer 6 coats the metal mesh layer 7. The metal grid layer 7 can improve the resistance distribution, and further reduce the voltage drop of the first electrode layer 1, so as to achieve the purpose of improving the luminous uniformity of the device.
Any of the above disclosed OLED devices of the present invention may be applied to an OLED lighting device. Other structures and implementation processes of the OLED lighting device are similar to those of the conventional OLED lighting device in the prior art, and thus are not described herein.
There are, of course, many specific embodiments of the invention, not set forth herein. All technical solutions formed by equivalent substitution or equivalent transformation fall within the scope of the invention claimed.
Claims (10)
1. The OLED device comprises a substrate, a first electrode layer, an organic functional layer and a second electrode layer which are sequentially arranged on the substrate, and is characterized by further comprising a plurality of isolation columns arranged on the first electrode layer, wherein the second electrode layer is partitioned by the isolation columns to form a plurality of conductive areas and a plurality of relatively independent sub-luminous areas positioned between adjacent conductive areas; the isolation column used for limiting the edge of the sub-luminous area is provided with a notch, the notch is covered by the second electrode layer to form a short-circuit preventing connection structure, and the sub-luminous area is connected with the conductive area through the short-circuit preventing connection structure.
2. An OLED device as claimed in claim 1, wherein said first electrode layer is provided with an insulating layer corresponding to said isolation pillars and said short circuit preventing connection structure, said isolation pillars being provided on said insulating layer.
3. An OLED device as claimed in claim 2, wherein said conductive regions are correspondingly disposed on said insulating layer.
4. An OLED device as claimed in claim 2, wherein said first electrode layer is provided with a metal mesh layer, said insulating layer coating said metal mesh layer.
5. An OLED device as claimed in claim 1, wherein a plurality of said conductive areas are arranged in a stripe parallel spaced or grid pattern.
6. The OLED device of claim 1, wherein the first electrode layer is an ITO electrode layer and the second electrode layer is an Ag electrode layer.
7. An OLED device as claimed in claim 1, wherein said short circuit preventing connection structure has a width of 10-50 μm.
8. An OLED device as claimed in claim 1 wherein said second electrode layer has a thickness of >400nm.
9. An OLED device as claimed in claim 1, wherein the short circuit preventing connection structure is a straight line structure, a broken line structure or a curved line structure.
10. An OLED lighting device comprising an OLED device as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110675841.2A CN113471381B (en) | 2021-06-18 | 2021-06-18 | OLED device and OLED lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110675841.2A CN113471381B (en) | 2021-06-18 | 2021-06-18 | OLED device and OLED lighting device |
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| Publication Number | Publication Date |
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| CN113471381A CN113471381A (en) | 2021-10-01 |
| CN113471381B true CN113471381B (en) | 2024-04-16 |
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| CN202110675841.2A Active CN113471381B (en) | 2021-06-18 | 2021-06-18 | OLED device and OLED lighting device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956210A (en) * | 2005-10-28 | 2007-05-02 | 三星电子株式会社 | Display device and method of manufacturing the same |
| CN105118924A (en) * | 2015-07-29 | 2015-12-02 | 苏州大学 | Short-circuit-preventing top-emission OLED device and manufacturing method thereof |
| CN109427994A (en) * | 2017-08-29 | 2019-03-05 | 固安翌光科技有限公司 | A kind of organic electro-optic device |
| CN109950273A (en) * | 2017-12-20 | 2019-06-28 | 固安翌光科技有限公司 | A kind of the OLED lighting screen body and preparation method of light-emitting component concatenation |
| CN110098342A (en) * | 2019-05-16 | 2019-08-06 | 江苏集萃有机光电技术研究所有限公司 | A kind of electrode structure, organic electro-optic device and OLED illumination panel |
| CN112864218A (en) * | 2021-04-16 | 2021-05-28 | 京东方科技集团股份有限公司 | Light-emitting substrate and light-emitting device |
-
2021
- 2021-06-18 CN CN202110675841.2A patent/CN113471381B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956210A (en) * | 2005-10-28 | 2007-05-02 | 三星电子株式会社 | Display device and method of manufacturing the same |
| CN105118924A (en) * | 2015-07-29 | 2015-12-02 | 苏州大学 | Short-circuit-preventing top-emission OLED device and manufacturing method thereof |
| CN109427994A (en) * | 2017-08-29 | 2019-03-05 | 固安翌光科技有限公司 | A kind of organic electro-optic device |
| CN109950273A (en) * | 2017-12-20 | 2019-06-28 | 固安翌光科技有限公司 | A kind of the OLED lighting screen body and preparation method of light-emitting component concatenation |
| CN110098342A (en) * | 2019-05-16 | 2019-08-06 | 江苏集萃有机光电技术研究所有限公司 | A kind of electrode structure, organic electro-optic device and OLED illumination panel |
| CN112864218A (en) * | 2021-04-16 | 2021-05-28 | 京东方科技集团股份有限公司 | Light-emitting substrate and light-emitting device |
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| CN113471381A (en) | 2021-10-01 |
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