CN113471345B - LED chip, LED display device and manufacturing method thereof - Google Patents

LED chip, LED display device and manufacturing method thereof Download PDF

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CN113471345B
CN113471345B CN202111032682.0A CN202111032682A CN113471345B CN 113471345 B CN113471345 B CN 113471345B CN 202111032682 A CN202111032682 A CN 202111032682A CN 113471345 B CN113471345 B CN 113471345B
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layer
holes
annular
electrodes
solder
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CN113471345A (en
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罗雪方
陈文娟
罗子杰
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Luohuaxin Display Technology Development Jiangsu Co ltd
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Luohuaxin Display Technology Development Jiangsu Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides an LED chip, an LED display device and a manufacturing method thereof. And the second electrode corresponding to the second metal layer extends from the annular hole of the flat layer, and an annular accommodating groove is formed in the annular hole, and when the second metal layer and the second electrode are jointed through the second solder, the second solder can flow into the annular accommodating groove, so that the solder is prevented from overflowing and generating short circuit.

Description

LED chip, LED display device and manufacturing method thereof
Technical Field
The invention relates to the field of inorganic diode packaging display, in particular to an LED chip, an LED display device and a manufacturing method thereof.
Background
The inorganic light emitting diode has the advantages of small driving current, stable voltage, long service life and the like, and has better stability compared with the organic light emitting diode. In the conventional inorganic LED display structure, a plurality of LED chips are bonded to a driving substrate, and the plurality of LED chips are required to be electrically connected in a one-to-one correspondence to electrode patterns on the driving substrate.
Disclosure of Invention
Based on solving the above problems, the present invention provides an LED chip, which includes a substrate layer, an N-type epitaxial layer, a light emitting layer, and a P-type epitaxial layer sequentially disposed on the substrate layer; the LED chip comprises a substrate layer, an N-type epitaxial layer, a light-emitting layer, an insulating layer and a blind hole, wherein the substrate layer, the N-type epitaxial layer and the light-emitting layer are arranged in the middle area of the LED chip, the blind hole penetrates through the substrate layer, the N-type epitaxial layer and the light-emitting layer, the bottom of the blind hole is exposed out of the P-type epitaxial layer, the caliber of the blind hole is gradually increased from the P-type epitaxial layer to the substrate layer, the insulating layer is arranged on the side wall of the blind hole, a first metal layer is arranged at the bottom of the blind hole, and the thickness of the first metal layer is smaller than the depth of the blind hole; the edge of the substrate layer is provided with an annular gap, and a second metal layer is filled in the gap and is flush with the lower surface of the substrate layer.
The invention also provides an LED display device, which comprises a plurality of the LED chips and a driving substrate;
the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
the first metal layers of the LED chips are jointed with the first electrode through first welding materials, the second metal layers of the LED chips are jointed with the second electrode through second welding materials, and at least one part of the convex parts is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
Preferably, the driving substrate includes a base, and a gate dielectric layer, an interlayer insulating layer and a flat layer on the base in sequence, and an upper surface of the flat layer constitutes the top surface of the driving substrate.
Preferably, the driving substrate further includes a plurality of thin film transistors and a wiring pattern interposed between the interlayer insulating layer and the planarization layer, the wiring pattern including a first pattern and a second pattern, wherein the first pattern is electrically connected to source/drain electrodes of the thin film transistors.
Preferably, the planarization layer has a plurality of through holes and a plurality of annular holes therein, the plurality of annular holes surrounding the plurality of through holes, respectively.
Preferably, the plurality of first electrodes extend from bottoms of the plurality of via holes to top surfaces of the plurality of protrusions, respectively, to be electrically connected to the first pattern; the plurality of second electrodes extend from the plurality of annular holes to an upper surface of the planarization layer, respectively.
Preferably, the second electrodes only cover the bottom and the side wall of the annular hole to form an annular accommodating groove.
Preferably, a part of the second solder is filled in the annular accommodation groove.
The invention also provides a manufacturing method of the LED display device, which is used for manufacturing the LED display device and specifically comprises the following steps:
(1) providing a plurality of LED chips according to claim 1 and a driver substrate; wherein the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
(2) respectively arranging a first solder and a second solder on the first metal layer and the second metal layer;
(3) bonding the first metal layers of the LED chips to the first electrode through first solder, and bonding the second metal layers of the LED chips to the second electrode through second solder and reflowing, wherein at least a part of the plurality of protrusions is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
Wherein the driving substrate further comprises a flat layer at the topmost layer thereof, the flat layer having a plurality of through holes therein and a plurality of annular holes surrounding the plurality of through holes, respectively; wherein the plurality of first electrodes extend from the bottoms of the plurality of through holes to the top surfaces of the plurality of protrusions, respectively; the plurality of second electrodes extend to the upper surface of the flat layer from the plurality of annular holes respectively, only cover the bottoms and the side walls of the annular holes to form an annular accommodating groove, and one part of the second solder is filled in the annular accommodating groove.
The invention has the following advantages:
according to the invention, the first metal layer of the LED chip is formed at the bottom of the blind hole, and the second metal layer is formed into an annular structure surrounding the blind hole, so that the convex part on the driving substrate can be aligned conveniently, alignment and bonding can be easily formed, and the bonding reliability is ensured. And the second electrode corresponding to the second metal layer extends from the annular hole of the flat layer, and an annular accommodating groove is formed in the annular hole, and when the second metal layer and the second electrode are jointed through the second solder, the second solder can flow into the annular accommodating groove, so that the solder is prevented from overflowing and generating short circuit.
Drawings
FIG. 1 is a cross-sectional view of an LED chip of the present invention;
FIGS. 2a-2e are schematic diagrams of a method of fabricating an LED chip according to the present invention;
FIG. 3 is a cross-sectional view of an LED display device of the present invention;
fig. 4a to 4f are schematic views illustrating a method of manufacturing an LED display device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
An LED chip, an LED display device, and a method of manufacturing the same according to the disclosed embodiments of the invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, the present invention firstly provides an LED chip, wherein the LED chip 10 is a single chip and at least has a substrate layer 1, an N-type epitaxial layer 2, a light emitting layer 3 and a P-type epitaxial layer 4. Taking a gallium nitride LED as an example, the base layer 1 may be any suitable substrate such as a silicon substrate, a sapphire substrate, a silicon carbide substrate, or the like, and sapphire is taken as an example here.
Taking the GaN LED as an example, the N-type epitaxial layer may be an N-type GaN layer, the light emitting layer 2 may be an InGaN/GaN stacked structure, and the P-type epitaxial layer may be a P-type GaN layer, so as to form a light emitting epitaxial layer on the front surface of the substrate layer 1. A buffer layer (not shown) may also be first formed on the front side of the base layer 1 before the growth of the N-type epitaxial layer.
The LED chip comprises an LED chip 10 and is characterized in that a blind hole 5 is formed in the middle area of the LED chip 10, the blind hole 5 is formed through an etching process, the blind hole 5 penetrates through the substrate layer 1, the N-type epitaxial layer 2 and the light-emitting layer 3, the bottom of the blind hole is exposed out of the P-type epitaxial layer 4, and the caliber of the blind hole 5 is gradually increased from the P-type epitaxial layer 4 to the substrate layer 1. In the cross-sectional view, the blind holes 5 have an isosceles trapezoid structure, and the trapezoid structure is designed to facilitate alignment during packaging.
The aperture of the blind hole 5 is not easily too large to prevent the light emitting area of each LED chip from being reduced. An insulating layer 6 is provided on the sidewall of the blind hole 5, and the insulating layer 6 may be a material such as alumina or aluminum nitride, which may be a one-layer or multi-layer structure. The bottom of the insulating layer 6 should expose the P-type epitaxial layer 4 for subsequent formation of the N-electrode.
The N electrode is the first metal layer 7 in fig. 1, the first metal layer 7 is deposited at the bottom of the blind via 5, and a metal ohmic contact may be formed between the first metal layer 7 and the N electric type epitaxial layer 4 by thermal annealing. The material of the first metal layer 7 may be a metal material such as copper, gold, silver, etc., and particularly, the thickness of the first metal layer 7 is smaller than the depth of the blind via 5, so that the blind via 5 is at least partially not occupied by the first metal layer 7 to form a receiving space, which is designed for facilitating the alignment of the electrodes.
The edge of the substrate layer 1 is provided with an annular gap 8, the gap 8 is filled with a second metal layer 9, and the second metal layer 9 is a P electrode. Wherein the second metal layer 9 is flush with the lower surface of the substrate layer 1. The second metal layer 9 may be formed by selective deposition of metal together with the first metal layer 7.
The method of manufacturing the LED chip may be seen in fig. 2a-2e, which are formed by a semiconductor device process. Specifically, a P-type epitaxial layer 2, a light emitting layer 3 and an N-type epitaxial layer 4 are formed on a substrate layer 1 by epitaxial growth, respectively, referring to fig. 2a, the epitaxial growth may be formed by MBE process, wherein the substrate layer 1 may be a wafer structure.
Referring to fig. 2b, a plurality of blind holes 5 penetrating through the base layer 1, the P-type epitaxial layer 2 and the light emitting layer 3 are formed, the N-type epitaxial layer 4 is exposed at the bottom of the blind holes 5, and the diameter of the blind holes 5 gradually increases from the P-type epitaxial layer 4 toward the base layer 1. Meanwhile, a plurality of annular gaps 8 surrounding the blind holes 5 respectively are formed in the substrate layer 1, and the P-type epitaxial layer 2 is exposed from the gaps 8.
Referring then to fig. 2c, an insulating layer 6 for isolation is formed on the sidewalls of the plurality of blind vias 5, the insulating layer 6 may have a thickness of 0.1-1 μm, and the bottom thereof should expose the N-type epitaxial layer 4 in order to form an electrode disposed at the bottom of the blind vias 5.
Metal is selectively deposited from the substrate layer 1 side to form a first metal layer 7 at the bottom of the blind hole 5 and a second metal layer 9 in the annular gap 8, see in particular fig. 2 d. The first metal layer 7 and the second metal layer 9 may be selectively deposited through a mask, and specific methods include CVD, PVD, PECVD, or the like.
Grinding the substrate layer 1 such that the second metal layer 9 is flush with the lower surface of the substrate layer 1 also helps to thin the LED chip, see in particular fig. 2 e. Finally, the individual LED chips 10 as shown in fig. 1 can be formed by a singulation technique (e.g., mechanical dicing or laser dicing).
Based on the LED chip 10, the present invention further provides an LED display device, which includes a plurality of LED chips and a driving substrate;
the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
the first metal layers of the LED chips are jointed with the first electrode through first welding materials, the second metal layers of the LED chips are jointed with the second electrode through second welding materials, and at least one part of the convex parts is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
Referring specifically to fig. 3, the LED display device of the present invention includes a plurality of LED chips 10 electrically joined to a driving substrate. The driving substrate comprises a base 20, and a gate dielectric layer 21, an interlayer insulating layer 22 and a flat layer 26 which are sequentially arranged on the base 20, wherein the upper surface of the flat layer 26 is the top surface of the driving substrate.
A plurality of thin film transistors 23 are disposed in the gate dielectric layer 21, the interlayer insulating layer 22, and the planarization layer 26, and a wiring pattern including a first pattern 24 and a plurality of second patterns 25 is provided on the interlayer insulating layer 22. Wherein the plurality of first patterns 24 are electrically connected to the source/drain electrodes of the plurality of thin film transistors 23, respectively, and the first patterns 24 and the second patterns 25 are formed through the same deposition step and are etched.
The first pattern 24 and the second pattern 25 are interposed between the interlayer insulating layer 22 and the planarization layer 26, and have a plurality of through holes 27 and a plurality of ring-shaped holes 28 disposed correspondingly in the planarization layer 26. Wherein the plurality of through holes 27 and the plurality of annular holes 28 have inverted trapezoidal cross sections, and the opening size thereof is such that the wiring therein does not completely fill the plurality of through holes 27 and the plurality of annular holes 28.
The bottoms of the plurality of via holes 27 expose the first patterns 24, respectively, wherein a plurality of first electrodes 30 are provided on the planarization layer 26, and the plurality of first electrodes are electrically connected to the first patterns 24. The plurality of first electrodes 30 may cover the sidewalls of the plurality of through holes 27, that is, the plurality of first electrodes 30 may not completely fill the plurality of through holes 27, or may completely fill the plurality of through holes 27.
A plurality of annular holes 28 respectively surround the plurality of through holes 27, the bottom of the plurality of annular holes 28 respectively expose the second pattern 25, the aperture of each annular hole 28 may be larger than or equal to the size of the LED chip, and the shape of the annular hole 28 is similar to the structure of the LED chip when viewed from above, and both of them may be rectangular, square or circular structures.
There are also a plurality of second electrodes 31 on the planarization layer 26, the plurality of second electrodes 31 being electrically connected to the second patterns 25 through annular holes. Each second electrode 31 is formed to conform to the annular hole 28, and is also formed in an annular structure, and is formed only on the sidewall and the bottom of the annular hole, but does not completely fill the annular hole 28 to form an annular receiving groove.
In particular, a plurality of protrusions 29 are also provided on the planar layer 26, and the protrusions 29 may be formed using an elastic polymer material, such as a modified polystyrene material. The shape of the protruding parts 29 is matched with the shape of the bottom blind hole 5 of the LED chip. The first electrodes 30 extend from the bottoms of the through holes 27 to the top surfaces of the bosses 29, respectively, so that the blind holes 5 of the LED chip can be fitted into the bosses 29.
The plurality of LED chips 10 are flip-chip mounted on the driving substrate, wherein the first metal layer 7 is bonded to the first electrode 30 by a first solder 32, wherein the first solder 32 is disposed between the first metal layer 7 and the first electrode 30, and the first solder 32 is located on top of the convex portion 29. The second metal layer 9 is bonded to the second electrode 31 by a second solder 33, wherein the second solder 33 surrounds the bottom periphery of the LED chip 10.
Further, the second solder 33 also at least partially flows into the annular receiving groove of the annular hole 28, so that the second solder 33 can be prevented from overflowing to cause short circuit.
Finally, a sealing layer is further included on the planarization layer 26, the sealing layer completely covers the plurality of LED chips 10, and the sealing layer further covers the first solder 32 and the second solder 33 and is filled between the LED chips 10 and the planarization layer 26. The sealing layer may be a light-cured or heat-cured material, which may be formed by injection molding, lamination, molding.
In order to form the display device simply and at low cost, the invention also provides a manufacturing method of the LED display device, which specifically comprises the following steps:
(1) providing a plurality of LED chips and a driving substrate; wherein the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
(2) respectively arranging a first solder and a second solder on the first metal layer and the second metal layer;
(3) bonding the first metal layers of the LED chips to the first electrode through first solder, and bonding the second metal layers of the LED chips to the second electrode through second solder and reflowing, wherein at least a part of the plurality of protrusions is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
The method of manufacturing the LED display device of the present invention will be described in detail with reference to fig. 4a to 4 f.
Referring to fig. 4a, a gate dielectric layer 21, an interlayer insulating layer 22, and a plurality of thin film transistors 23 are sequentially formed on a substrate 20, wherein a wiring pattern including a first pattern 24 and a second pattern 25 is formed on the interlayer insulating layer 22 by deposition.
Next, a planarization layer 26 is covered on the interlayer insulating layer 22, and a plurality of through holes 27 and a plurality of annular holes 28 are formed in the planarization layer 26, the plurality of annular holes 28 surrounding the plurality of through holes 27, respectively, see fig. 4 b.
Referring to fig. 4c, a plurality of protrusions 29 are formed on the planarization layer 26, and the protrusions 29 are formed in each of the annular holes 28. The boss 29 has a truncated pyramid shape or a truncated cone shape with a small top and a large bottom to correspond to the shape of the blind hole 5 of the LED chip 10, facilitating mounting alignment.
Referring to fig. 4d, electrode layers, i.e., a first electrode 30 extending from the bottom of the plurality of through holes 27 to the top surface of the plurality of protrusions 29 and a second electrode 31 extending from the bottom of the annular hole 28 to the upper surface of the planarization layer 26, are formed on the planarization layer 26 and the protrusions 29. The first electrode 30 and the second electrode 31 are formed in the same metal deposition step, and an electrode pattern structure is formed by etching.
Then, referring to fig. 4e, a first solder 32 is formed on the first metal layer 7 of each LED chip 10, a second solder 33 in a ring shape is formed on the second metal layer 9 of each LED chip 10, and the LED chips 10 are bonded to the first electrode 30 and the second electrode 31 with the first solder 32 and the second solder 33, and a firm electrical bonding is performed with a reflow, and at the time of the reflow, part of the second solder flows into the ring-shaped accommodation groove of the ring-shaped hole 28.
Finally, referring to fig. 4f, a sealing layer 34 is formed, the sealing layer 34 completely covers the plurality of LED chips 10, and the sealing layer 34 further covers the first solder 32 and the second solder 33 and is filled between the LED chips 10 and the planarization layer 26.
According to the invention, the first metal layer of the LED chip is formed at the bottom of the blind hole, and the second metal layer is formed into an annular structure surrounding the blind hole, so that the convex part on the driving substrate can be aligned conveniently, alignment and bonding can be easily formed, and the bonding reliability is ensured. And the second electrode corresponding to the second metal layer extends from the annular hole of the flat layer, and an annular accommodating groove is formed in the annular hole, and when the second metal layer and the second electrode are jointed through the second solder, the second solder can flow into the annular accommodating groove, so that the solder is prevented from overflowing and generating short circuit.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (10)

1. An LED chip comprises a substrate layer, an N-type epitaxial layer, a light emitting layer and a P-type epitaxial layer, wherein the N-type epitaxial layer, the light emitting layer and the P-type epitaxial layer are sequentially arranged on the substrate layer; the LED chip comprises a substrate layer, an N-type epitaxial layer, a light-emitting layer, an insulating layer and a blind hole, wherein the substrate layer, the N-type epitaxial layer and the light-emitting layer are arranged in the middle area of the LED chip, the blind hole penetrates through the substrate layer, the N-type epitaxial layer and the light-emitting layer, the bottom of the blind hole is exposed out of the P-type epitaxial layer, the caliber of the blind hole is gradually increased from the P-type epitaxial layer to the substrate layer, the insulating layer is arranged on the side wall of the blind hole, a first metal layer is arranged at the bottom of the blind hole, and the thickness of the first metal layer is smaller than the depth of the blind hole; the edge of the substrate layer is provided with an annular gap, and a second metal layer is filled in the gap and is flush with the lower surface of the substrate layer.
2. An LED display device comprising a plurality of the LED chips of claim 1 and a driving substrate;
the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
the first metal layers of the LED chips are jointed with the first electrode through first welding materials, the second metal layers of the LED chips are jointed with the second electrode through second welding materials, and at least one part of the convex parts is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
3. The LED display device of claim 2, wherein: the driving substrate comprises a base, and a gate dielectric layer, an interlayer insulating layer and a flat layer which are sequentially arranged on the base, wherein the upper surface of the flat layer is formed as the top surface of the driving substrate.
4. The LED display device of claim 3, wherein: the driving substrate further includes a plurality of thin film transistors and a wiring pattern interposed between the interlayer insulating layer and the planarization layer, the wiring pattern including a first pattern and a second pattern, wherein the first pattern is electrically connected to source/drain electrodes of the thin film transistors.
5. The LED display device of claim 4, wherein: the flat layer has a plurality of through holes and a plurality of annular holes therein, the plurality of annular holes surrounding the plurality of through holes, respectively.
6. The LED display device of claim 5, wherein: the plurality of first electrodes extend from bottoms of the plurality of via holes to top surfaces of the plurality of protrusions, respectively, to be electrically connected to the first pattern; the plurality of second electrodes extend from the plurality of annular holes to an upper surface of the planarization layer, respectively.
7. The LED display device of claim 6, wherein: the second electrodes only cover the bottom and the side wall of the annular hole to form an annular accommodating groove.
8. The LED display device of claim 7, wherein: and part of the second welding flux is filled in the annular accommodating groove.
9. A method for manufacturing an LED display device according to any one of claims 2 to 8, comprising the steps of:
(1) providing a plurality of LED chips according to claim 1 and a driver substrate; wherein the driving substrate includes a plurality of protrusions, a plurality of first electrodes, and a plurality of second electrodes on a top surface thereof; the plurality of protruding parts are in a frustum shape or a circular truncated cone shape with a small upper part and a large lower part, and the plurality of first electrodes respectively extend to the top surfaces of the plurality of protruding parts;
(2) respectively arranging a first solder and a second solder on the first metal layer and the second metal layer;
(3) bonding the first metal layers of the LED chips to the first electrode through first solder, and bonding the second metal layers of the LED chips to the second electrode through second solder and reflowing, wherein at least a part of the plurality of protrusions is embedded in the blind holes; and the first solder is arranged between the top surface of the convex part and the first metal layer.
10. The method for manufacturing an LED display device according to claim 9, wherein: the driving substrate further comprises a flat layer at the topmost layer thereof, the flat layer having a plurality of through holes therein and a plurality of annular holes surrounding the plurality of through holes, respectively; wherein the plurality of first electrodes extend from the bottoms of the plurality of through holes to the top surfaces of the plurality of protrusions, respectively; the plurality of second electrodes extend to the upper surface of the flat layer from the plurality of annular holes respectively, only cover the bottoms and the side walls of the annular holes to form an annular accommodating groove, and one part of the second solder is filled in the annular accommodating groove.
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