CN113467122A - Display panel, manufacturing method thereof and mobile terminal - Google Patents
Display panel, manufacturing method thereof and mobile terminal Download PDFInfo
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- CN113467122A CN113467122A CN202110738121.6A CN202110738121A CN113467122A CN 113467122 A CN113467122 A CN 113467122A CN 202110738121 A CN202110738121 A CN 202110738121A CN 113467122 A CN113467122 A CN 113467122A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000010410 layer Substances 0.000 claims abstract description 262
- 229910052751 metal Inorganic materials 0.000 claims abstract description 168
- 239000002184 metal Substances 0.000 claims abstract description 168
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000011241 protective layer Substances 0.000 claims abstract description 61
- 230000001681 protective effect Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 72
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133311—Environmental protection, e.g. against dust or humidity
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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Abstract
The application discloses display panel and manufacturing method, mobile terminal, display panel is including the substrate that sets gradually, first metal level, first insulating layer and second metal level, first via hole is seted up to the position that corresponds first metal level on the first insulating layer, first metal level is provided with a protective layer on being located the exposed connecting portion in first via hole, this application is through setting up the protective layer on first metal level, when adopting high temperature resistant low impedance metal preparation LTPS panel metal routing layer, the problem that first metal level is not resistant to hydrofluoric acid corrosion has effectively been solved, the charge rate of the well jumbo size product of LTPS display panel has effectively been promoted.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, a manufacturing method of the display panel and a mobile terminal.
Background
Flat mobile terminals such as Liquid Crystal Displays (LCDs) have the advantages of high image quality, power saving, thin body, and wide application range, and are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, and desktop computers, and become the mainstream of mobile terminals. LCDs have two display technologies, Amorphous Silicon (a-Si)/Low Temperature Polysilicon (LTPS), and LTPS has the advantage of high mobility, and is widely used in high-specification panel technologies.
Some metal wire processes of LTPS products are limited to high temperature processes, the process temperature is as high as 600 ℃, most products in the industry currently use molybdenum metal, and the molybdenum metal has high resistance, which seriously affects the development of middle-sized products with high resolution, high frequency and high charging rate, so a low-resistance and high-temperature-resistant material is needed, but the low-resistance and high-temperature-resistant material is easily corroded by hydrofluoric acid in the process, and thus a display panel with low metal wire resistance, high temperature resistance and hydrofluoric acid corrosion resistance is urgently needed.
Disclosure of Invention
The embodiment of the application provides a display panel, a manufacturing method thereof and a mobile terminal, and can solve the technical problem that the existing high-resolution and high-frequency medium-size product has the requirement on high charging rate.
An embodiment of the present application provides a display panel, including:
a substrate;
a first metal layer disposed on the substrate;
a first insulating layer disposed on the first metal layer, the first insulating layer including a first via hole located above the first metal layer;
the second metal layer is arranged on the first insulating layer;
the first metal layer is provided with a protective layer, the first metal layer comprises exposed connecting parts corresponding to the first via holes, and the orthographic projection of the protective layer on the substrate at least covers the orthographic projection of the exposed connecting parts on the substrate.
In the display panel provided by the application, the display panel includes a display area and a peripheral area, the first via hole is located in the peripheral area, the first metal layer includes a routing sublayer disposed in the peripheral area, the protective layer includes a first protective sublayer disposed on the routing sublayer, the routing sublayer includes the exposed connecting portion, and an orthographic projection of the first protective sublayer on the substrate covers an orthographic projection of the exposed connecting portion on the substrate;
the pattern of the first protective sublayer is the same as the pattern of the wiring sublayer, and the orthographic projection of the wiring sublayer on the substrate at least covers the orthographic projection of the first protective sublayer on the substrate.
In the display panel provided by the present application, the first metal layer includes a gate sublayer disposed in the display region, and the protection layer includes a second protection sublayer disposed between the gate sublayer and the first insulating layer;
the pattern of the second protective sublayer is the same as that of the gate sublayer, and the orthographic projection of the gate sublayer on the substrate at least covers the orthographic projection of the second protective sublayer on the substrate.
In the display panel provided by the application, the protective layer set up in on the first metal layer and be located in the first via, the protective layer is in orthographic projection on the substrate with naked connecting portion is in orthographic projection coincidence on the substrate.
In the display panel provided by the application, the resistivity of the first metal layer is smaller than that of molybdenum metal.
In the display panel provided by the present application, the material of the protection layer includes a doped electronic type semiconductor or indium tin oxide, so that the first metal layer is electrically connected to the second metal layer.
The application also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate;
forming a first metal layer on the substrate, and forming a protective layer on the first metal layer;
forming a first insulating layer on the first metal layer and the protective layer, the first insulating layer including a first via formed over the first metal layer;
forming a second metal layer on the first insulating layer;
the first metal layer comprises a bare connecting part corresponding to the first via hole, and the orthographic projection of the protective layer on the substrate at least covers the orthographic projection of the bare connecting part on the substrate.
In the manufacturing method of the display panel provided by the application, the first metal layer and the protective layer are formed by etching through the same mask.
The application also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate;
forming a first metal layer on the substrate;
forming a first insulating layer on the first metal layer and the protective layer, the first insulating layer including a first via formed over the first metal layer;
forming a protective layer on the first metal layer in the first via hole;
forming a second metal layer on the first insulating layer;
the first metal layer comprises an exposed connecting part corresponding to the first via hole, and the orthographic projection of the protective layer on the substrate is superposed with the orthographic projection of the exposed connecting part on the substrate.
The application also provides a mobile terminal, which comprises the display panel and a terminal main body, wherein the terminal main body and the display panel are combined into a whole.
The beneficial effects of the invention at least comprise:
the protective layer is arranged on the first metal layer, so that the problem that the first metal layer is not resistant to corrosion of hydrofluoric acid when the metal routing layer of the LTPS panel is prepared by adopting high-temperature-resistant low-impedance metal is effectively solved, and the charging rate of medium-size and large-size products of the LTPS display panel is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a display panel in which a protective layer covers a first metal layer in a peripheral region according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a protective layer covering a first metal layer according to an embodiment of the present disclosure;
FIG. 4 is a schematic flow chart illustrating a method for fabricating a display panel according to an embodiment of the present disclosure;
FIGS. 5a-5c are schematic flow charts illustrating a method for fabricating a display panel according to another embodiment of the present application;
FIG. 6 is a schematic flow chart illustrating a method for fabricating a display panel according to another embodiment of the present disclosure;
fig. 7a to 7e are schematic flow charts illustrating a method for manufacturing a display panel according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Currently, LCDs have two display technologies, amorphous silicon/LTPS, and LTPS has the advantage of high mobility, and thus is widely used in high-specification panel technologies. The gate lead of the LTPS product is limited by a high-temperature process, the temperature in the process reaches up to 600 ℃, molybdenum metal is mostly used in the mass production products in the industry at present, and the molybdenum metal has higher resistance, so that the charging rate of high-resolution and high-frequency medium-size products is limited.
An embodiment of the present application provides a display panel, as shown in fig. 1, including:
a substrate 1;
a first metal layer disposed on the substrate 1;
a first insulating layer 4 disposed on the first metal layer, the first insulating layer 4 including a first via P1 located above the first metal layer;
a second metal layer 6 disposed on the first insulating layer 4;
the first metal layer is provided with a protective layer 5, the first metal layer comprises a bare connecting part corresponding to the first via hole P1, and the orthographic projection of the protective layer 5 on the substrate 1 at least covers the orthographic projection of the bare connecting part on the substrate 1.
The protective layer 5 is arranged on the corresponding exposed connecting part of the first metal layer in the first via hole P1 in the manufacturing process, so that when hydrofluoric acid is used for cleaning the oxide layer of the active layer 3 in the via hole in the manufacturing process, the first metal layer can be prevented from contacting with the hydrofluoric acid due to the protection of the protective layer 5, the first metal layer is prevented from being corroded by the hydrofluoric acid, and the high-charging-rate performance of a high-resolution and high-frequency medium-sized product is realized.
Specifically, the substrate 1 includes a glass substrate and a buffer layer on the glass substrate, which are sequentially disposed, and a light shielding layer may be further disposed between the glass substrate and the buffer layer.
Specifically, the first metal layer may include a gate trace of the array substrate, and may also include other signal traces, the first metal layer has high temperature resistance and low impedance, and the resistivity of the first metal material is at least less than 5.78 Ω · cm at 27 ℃, so as to achieve high charge rate performance of a high-resolution, high-frequency, medium-sized product, and whether the first metal material has corrosion resistance is not limited, for example, the first metal material may be an aluminum alloy.
Specifically, the protective layer 5 may be manufactured by using the same mask as the first metal layer, or may be formed after the first insulating layer 4 forms the first via hole P1, the protective layer 5 is at least formed on and covers the exposed connection portion corresponding to the first metal layer in the first via hole P1, and when the cross section of the first via hole P1 is an inverted trapezoid, the protective layer 5 may also cover the inner wall of the first via hole P1 and at least cover the exposed connection portion of the first metal layer, so that the protective layer 5 is formed on the exposed connection portion of the first metal layer in the first via hole P1, so that the display panel can effectively isolate hydrofluoric acid from the first metal layer in a subsequent hydrofluoric acid cleaning process, and prevent the first metal layer from being corroded by hydrofluoric acid, so that the first metal layer with low impedance but no resistance to corrosion by hydrofluoric acid can not be affected by corrosion of hydrofluoric acid in a manufacturing process of the display panel, a high charging rate of the display panel is made possible.
Specifically, the material of the protection layer 5 may include a high-concentration doped electronic type semiconductor conductive material (N + a-Si) or Indium Tin Oxide (ITO) with conductive performance, so that other signal traces connected to the first metal layer may be directly formed above the protection layer 5 after the hydrofluoric acid cleaning, without affecting conduction of the first metal layer, and the manufacturing of the protection layer 5 by using the high-concentration doped electronic type semiconductor conductive material (N + a-Si) or Indium tin oxide material may further improve conduction rate between the first metal layer and other signal traces, maintain good contact between the first metal layer and other signal traces, and improve display effect of the display panel.
It can be understood that part of the metal wire process of the LTPS product is limited to a high temperature process, which is described as a temperature as high as 600 ℃; currently, molybdenum metal is mostly used as a gate material in the industry, and the molybdenum metal has high impedance, which seriously affects the development of medium-sized products with high resolution, high frequency and high charging rate, so that a material with low impedance and high temperature resistance is hopefully adopted, but the material with low impedance and high temperature resistance is easily corroded by hydrofluoric acid in the manufacturing process, and the production of the medium-sized display panel with high charging rate, high resolution and high frequency is severely restricted; in the embodiment, the protective layer 5 is arranged on the first metal layer, so that the problem that the first metal layer is not resistant to corrosion of hydrofluoric acid when a metal routing layer of the LTPS panel is prepared by adopting high-temperature-resistant low-impedance metal is solved, the charging rate of medium and large-size products of the LTPS display panel is effectively improved, wherein the protective layer 5 is made of N + a-Si or ITO, the first metal layer has better conductivity, other signal routing lines connected with the first metal layer are in good contact, the input and output of current are facilitated, and the display effect is further improved.
In an embodiment, as shown in fig. 2, the display panel includes a display area AA and a peripheral area BA, the first via hole P1 is located in the peripheral area BA, the first metal layer includes a trace sublayer 201 disposed in the peripheral area BA, the protective layer 5 includes a first protective sublayer 501 disposed on the trace sublayer 201, the trace sublayer 201 includes the exposed connection portion, and an orthographic projection of the first protective sublayer 501 on the substrate 1 covers an orthographic projection of the exposed connection portion on the substrate 1;
the pattern of the first protective sublayer 501 is the same as the pattern of the trace sublayer 201, and the orthographic projection of the trace sublayer 201 on the substrate 1 at least covers the orthographic projection of the first protective sublayer 501 on the substrate 1;
specifically, the routing sublayer 201 in the peripheral area BA may be a gate routing, and only the first via hole P1 is disposed on the gate routing of the peripheral area BA, so that the layout rate of the array substrate in the display area AA can be improved.
It can be understood that, in this embodiment, the pattern of the first protective sublayer 501 is the same as the pattern of the routing sublayer 201, and the first protective sublayer 501 can be simultaneously manufactured when the first routing sublayer 201 is manufactured, and the routing sublayer 201 and the first protective sublayer 501 can be patterned by using the same mask, so that the number of masks can be reduced, and the production cost can be reduced.
In an embodiment, as shown in fig. 3, the first metal layer includes a gate sub-layer 202 disposed in the display area AA, and the protection layer 5 includes a second protection sub-layer 502 disposed between the gate sub-layer 202 and the first insulating layer 4;
the pattern of the second protective sub-layer 502 is the same as the pattern of the gate sub-layer 202, and the orthographic projection of the gate sub-layer 202 on the substrate 1 at least covers the orthographic projection of the second protective sub-layer 502 on the substrate 1.
It is understood that the first protective sub-layer 501 and the second protective sub-layer 502 may be made of the same material, and may also be formed by the same process; on the substrate 1, the trace sublayer 201 of the peripheral area BA and the gate sublayer 202 of the display area AA are in the same layer and made of the same material; when the first metal layer is manufactured, patterning operation is not performed after the first metal layer is laminated, the patterned protective layer 5 is formed on the unpatterned first metal layer, and then the unpatterned protective layer 5 and the unpatterned first metal layer are patterned by using the same mask.
In an embodiment, the protection layer 5 is disposed on the first metal layer and located in the first via hole P1, and an orthographic projection of the protection layer 5 on the substrate 1 coincides with an orthographic projection of the exposed connecting portion on the substrate 1.
It can be understood that, when the hole wall of the first via hole P1 is perpendicular to the substrate 1, a first via hole P1 may be formed on the first insulating layer 4, and then a protective layer 5 that coincides with an orthographic projection pattern of the first via hole P1 on the substrate 1 is formed in the first via hole P1, so as to solve the problem that when performing a hydrofluoric acid cleaning, a first through hole is opened in the first metal layer due to the first insulating layer 4 above the first metal layer, so that a portion of the first metal layer located in the first via hole P1 is exposed and corroded by hydrofluoric acid.
In an embodiment, the resistivity of the first metal layer is less than the resistivity of molybdenum metal, in particular, the material of the first metal layer comprises a metal having a resistivity of less than 5.78 Ω.
It can be understood that the lower the resistivity of the material of the first metal layer, the higher the charging rate of the resulting display panel, and the charging performance of the display panel can be effectively improved.
In an embodiment, the material of the protection layer 5 includes a doped electronic type semiconductor or indium tin oxide, so that the first metal layer is electrically connected to the second metal layer, it is understood that the doped electronic type semiconductor may be a high-concentration doped electronic type conductive material, that is, N + a-Si, where N + a-Si is a semiconductor material having a conductive property, and an ohmic contact layer can be formed between the first metal layer and the second metal layer 6, so that a good contact is formed between the first metal layer and the second metal layer 6, the display performance of the display panel is improved, and both the doped electronic type semiconductor and the indium tin oxide are resistant to corrosion by hydrofluoric acid, and after being cleaned by hydrofluoric acid, the performance is not changed, and a good conduction can be achieved.
In an embodiment, the material of the protection layer 5 may also be one of silicon nitride or silicon oxide, when silicon nitride or silicon oxide is used as the protection layer 5, the thickness of the protection layer 5 needs to be controlled, because silicon nitride and silicon oxide can be corroded by hydrofluoric acid, and because silicon nitride and silicon oxide are not conductive, in the step of cleaning with hydrofluoric acid, the thickness of the protection layer 5 needs to be designed according to the cleaning concentration and the cleaning amount of hydrofluoric acid, after the cleaning with hydrofluoric acid is completed, the non-conductive protection layer 5 on the first metal layer can be corroded exactly, so that the protection layer 5 can protect the first metal layer from being corroded by hydrofluoric acid, and the conduction between the first metal layer and the second metal layer 6 can not be affected.
The present application further provides a manufacturing method of a display panel, as shown in fig. 4, including the following steps:
s1, providing a substrate 1;
s2, forming a first metal layer on the substrate 1, and forming a protective layer 5 on the first metal layer;
s3, forming a first insulating layer 4 on the first metal layer and the protection layer 5, the first insulating layer 4 including a first via P1 formed over the first metal layer; wherein the first metal layer comprises a bare connection part corresponding to the first via hole P1, and an orthographic projection of the protective layer 5 on the substrate 1 at least covers an orthographic projection of the bare connection part on the substrate 1;
s4, forming a second metal layer 6 on the first insulating layer 4.
In particular, the first metal layer may be a gate.
It is understood that, as shown in fig. 5a to 5c, the display panel includes a substrate 1, an active layer 3 formed on the buffer layer, a gate insulating layer 301 formed over the active layer 3, a first metal layer formed on the gate insulating layer 301; specifically, the substrate 1 may include a glass substrate and a buffer layer, the buffer layer is formed on the glass substrate, and the buffer layer may be made of silicon nitride or silicon oxide; the first metal layer comprises a routing sublayer 201 located in the peripheral area BA and a gate sublayer 202 located in the display area AA, the routing sublayer 201 and the gate sublayer 202 are both made of low-impedance and high-temperature-resistant metal, a protective layer 5 is formed on the first metal layer after the first metal layer is laminated and before patterning, the protective layer 5 comprises a first protective sublayer 501 located on the routing sublayer 201 and a second protective sublayer 502 located on the gate sublayer 202, the first protective sublayer 501 and the second protective sublayer 502 are both made of the same material, and the first metal layer and the protective layer 5 form a patterned structure by using the same mask after the protective layer 5 material is laminated; forming a first insulating layer 4 on the protection layer 5, forming a first via hole P1 on the first insulating layer 4, the first via hole P1 being located above the first metal layer, and further forming a second via hole P2 on the first insulating layer 4, the second via hole P2 being located above the active layer 3; because air is retained in the second via hole P2, the semiconductor material of the active layer 3 forms a natural oxide layer, and therefore, the cleaning is performed by using hydrofluoric acid, and meanwhile, the hydrofluoric acid also treats the position of the first via hole P1, and because the protective layer 5 is formed on the first metal layer, the contact between the first metal layer and the hydrofluoric acid is avoided, and the problem that the first metal layer is corroded by the hydrofluoric acid is effectively prevented; after the hydrofluoric acid cleaning is finished, a second metal layer 6 is formed on the first insulating layer 4, so that the second metal layer 6 is connected with the first metal layer and the active layer 3.
In the manufacturing method of the display panel provided by the application, the first metal layer and the protective layer 5 are formed by etching through the same mask, and it can be understood that the protective layer 5 is set to be the same as the first metal layer, when the protective layer 5 is formed, the mask which is the same as the first metal layer can be used for manufacturing, so that the first metal layer can be protected from being corroded by hydrofluoric acid, the manufacturing steps are effectively reduced, and the production cost is effectively reduced.
The present application further provides a manufacturing method of a display panel, as shown in fig. 6, including the following steps:
s1, providing a substrate 1;
s2, forming a first metal layer on the substrate 1;
s3, forming a first insulating layer 4 on the first metal layer and the protection layer 5, the first insulating layer 4 including a first via P1 formed over the first metal layer;
s4, forming a protective layer 5 on the first metal layer in the first via hole P1; the first metal layer comprises a bare connecting part corresponding to the first via hole P1, and the orthographic projection of the protective layer 5 on the substrate 1 is superposed with the orthographic projection of the bare connecting part on the substrate 1;
s5, forming a second metal layer 6 on the first insulating layer 4.
It can be understood that, as shown in fig. 7a to 7e, the display panel includes a substrate 1, a semiconductor layer formed on the substrate 1, an active layer 3 formed on the semiconductor layer, a gate insulating layer 301 formed above the active layer 3, a first metal layer formed on the gate insulating layer 301, the first metal layer including a routing sublayer 201 in the peripheral area BA and a gate sublayer 202 in the display area AA, the routing sublayer 201 and the gate sublayer 202 are both made of low-resistance and high-temperature-resistant metal, after the first metal layer is formed, a first insulating layer 4 is formed on the first metal layer, a first via hole P1 is formed on the first insulating layer 4, the first via hole P1 is located above the first metal layer, a second via hole P2 is formed on the first insulating layer 4 and the gate insulating layer 301, the second via hole P2 is located above the active layer 3 and is disposed corresponding to the active layer 3, so that the second metal layer 6 is connected to the active layer 3; forming a protective layer 5 in the first via hole P1, wherein the protective layer 5 at least covers the exposed connection part of the first metal layer in the first via hole P1; since the second via hole P2 is left with air, the semiconductor material of the active layer 3 forms a natural oxide layer, and therefore, the first via hole P1 is cleaned with hydrofluoric acid, and the first metal layer is also treated with hydrofluoric acid, and the protective layer 5 is formed on the first metal layer, so that the first metal layer is prevented from contacting with hydrofluoric acid, and the first metal layer is effectively prevented from being corroded by hydrofluoric acid; after the hydrofluoric acid cleaning is finished, a second metal layer 6 is formed on the first insulating layer 4, so that the second metal layer 6 is connected with the first metal layer and the active layer 3.
The application also provides a mobile terminal, which comprises the display panel and a terminal main body, wherein the terminal main body and the display panel are combined into a whole.
To sum up, this application has effectively solved when adopting high temperature resistant low-impedance metal preparation LTPS panel metal routing layer through set up 5 structures of protective layer on first metal layer, and first metal layer is not able to bear or endure hydrofluoric acid corrosion's problem, has effectively promoted the rate of charge of the well jumbo size product of LTPS display panel.
The display panel, the manufacturing method thereof, and the mobile terminal provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principle and the embodiments of the present application, and the description of the embodiments above is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A display panel, comprising:
a substrate;
a first metal layer disposed on the substrate;
a first insulating layer disposed on the first metal layer, the first insulating layer including a first via hole located above the first metal layer;
the second metal layer is arranged on the first insulating layer;
the first metal layer is provided with a protective layer, the first metal layer comprises exposed connecting parts corresponding to the first via holes, and the orthographic projection of the protective layer on the substrate at least covers the orthographic projection of the exposed connecting parts on the substrate.
2. The display panel according to claim 1, wherein the display panel comprises a display area and a peripheral area, the first via hole is located in the peripheral area, the first metal layer comprises a trace sub-layer disposed in the peripheral area, the protective layer comprises a first protective sub-layer disposed on the trace sub-layer, the trace sub-layer comprises the exposed connection portion, and an orthographic projection of the first protective sub-layer on the substrate covers an orthographic projection of the exposed connection portion on the substrate;
the pattern of the first protective sublayer is the same as the pattern of the wiring sublayer, and the orthographic projection of the wiring sublayer on the substrate at least covers the orthographic projection of the first protective sublayer on the substrate.
3. The display panel of claim 2, wherein the first metal layer comprises a gate sub-layer disposed within the display region, the protective layer comprising a second protective sub-layer disposed between the gate sub-layer and the first insulating layer;
the pattern of the second protective sublayer is the same as that of the gate sublayer, and the orthographic projection of the gate sublayer on the substrate at least covers the orthographic projection of the second protective sublayer on the substrate.
4. The display panel of claim 1, wherein the protective layer is disposed on the first metal layer and within the first via, and an orthographic projection of the protective layer on the substrate coincides with an orthographic projection of the exposed connecting portion on the substrate.
5. The display panel of claim 1, wherein a resistivity of the first metal layer is less than a resistivity of molybdenum metal.
6. The display panel of claim 1, wherein the material of the protective layer comprises a doped electronic type semiconductor or indium tin oxide, such that the first metal layer is electrically connected to the second metal layer.
7. A manufacturing method of a display panel is characterized by comprising the following steps:
providing a substrate;
forming a first metal layer on the substrate, and forming a protective layer on the first metal layer;
forming a first insulating layer on the first metal layer and the protective layer, the first insulating layer including a first via formed over the first metal layer;
forming a second metal layer on the first insulating layer;
the first metal layer comprises a bare connecting part corresponding to the first via hole, and the orthographic projection of the protective layer on the substrate at least covers the orthographic projection of the bare connecting part on the substrate.
8. The method for manufacturing a display panel according to claim 7, wherein the first metal layer and the protective layer are formed by etching using the same mask.
9. A manufacturing method of a display panel is characterized by comprising the following steps:
providing a substrate;
forming a first metal layer on the substrate;
forming a first insulating layer on the first metal layer and the protective layer, the first insulating layer including a first via formed over the first metal layer;
forming a protective layer on the first metal layer in the first via hole;
forming a second metal layer on the first insulating layer;
the first metal layer comprises an exposed connecting part corresponding to the first via hole, and the orthographic projection of the protective layer on the substrate is superposed with the orthographic projection of the exposed connecting part on the substrate.
10. A mobile terminal comprising the display panel according to any one of claims 1 to 6 and a terminal body, wherein the terminal body is integrated with the display panel.
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Cited By (1)
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| CN114167654A (en) * | 2021-12-08 | 2022-03-11 | 武汉华星光电技术有限公司 | Array substrate and liquid crystal display panel |
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