CN113437097A - Photoelectric device with capacitor structure - Google Patents
Photoelectric device with capacitor structure Download PDFInfo
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- CN113437097A CN113437097A CN202110653927.5A CN202110653927A CN113437097A CN 113437097 A CN113437097 A CN 113437097A CN 202110653927 A CN202110653927 A CN 202110653927A CN 113437097 A CN113437097 A CN 113437097A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000005693 optoelectronics Effects 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoelectric device with a capacitor structure, which comprises a substrate layer, an epitaxial layer, a photoelectric conversion unit, a first electrode, a second electrode and a third electrode. The epitaxial layer is disposed on the substrate layer. The photoelectric conversion unit is arranged in the epitaxial layer and can receive the optical signal to generate an electric signal or modulate the optical signal according to the received electric signal. The first electrode, the second electrode and the third electrode are all arranged in the epitaxial layer. The first electrode and the second electrode are connected to both poles of the photoelectric conversion unit, respectively. A third electrode parallel to the second electrode to construct a parallel plate capacitor; the first electrode is also grounded. And applying a direct current bias voltage to the first electrode and the second electrode. A high-frequency electric signal is generated between the first electrode and the second electrode by incident light, or applied through the first electrode and the third electrode. Due to the effect of high frequency passing and low frequency blocking of the parallel plate capacitor, low-frequency-band electric signals can be reduced, high-frequency-band electric signals can be kept, and therefore the frequency bandwidth is improved.
Description
Technical Field
The invention relates to the technical field of photoelectric processing devices in photoelectric information, in particular to a photoelectric device with a capacitor structure.
Background
In recent years, with the rapid development of the internet of things, the optical fiber communication system is used as an important support for the internet of things, and the development of the optical fiber communication system is more emphasized. In the field of long-distance backbone networks, with the development and maturity of optical transmission technologies, the construction of trunk transmission networks has been hot in the world, and the transmission bandwidth and the transmission capacity are rapidly developed.
With the development of optical fiber communication systems, the development of optical devices also faces opportunities and challenges, and how to develop optical devices with excellent performance and low price has become a primary problem. Optoelectronic devices have the advantages of easy integration, low process cost, etc., and have attracted extensive attention of researchers in recent years. Silicon (Si) material is used as a traditional material in the field of microelectronics, has incomparable advantages of other materials in processing technology and manufacturing cost, and the silicon-based photoelectron integration technology is produced at the same time.
For example, a photodetector, which is one of the important representative elements in optoelectronic integration technology, functions to convert an incident optical signal into an electrical signal for analysis by a subsequent signal processing circuit.
For another example, an electro-optical modulator, which is one of the other important representative elements in silicon-based optoelectronic integration technology, functions to convert an electrical signal into an optical signal for transmission.
Disclosure of Invention
The photoelectric device is continuously optimized in structure and further improved in performance after the development of over ten years, but the problem that the bandwidth is lower, so that the working speed is influenced still exists. To this end, the invention proposes an optoelectronic device with a capacitive structure comprising
A substrate layer;
the epitaxial layer is arranged on the substrate layer;
the photoelectric conversion unit is arranged in the epitaxial layer and can receive an optical signal to generate an electric signal or modulate the optical signal according to the received electric signal;
the first electrode, the second electrode and the third electrode are all arranged in the epitaxial layer; the first electrode and the second electrode are respectively connected to two poles of the photoelectric conversion unit; the third electrode is parallel to the second electrode to configure a parallel plate capacitor; the first electrode is also grounded.
Preferably, the photoelectric conversion unit is a PIN structure, an MSM structure, or an avalanche structure.
Preferably, the photoelectric conversion unit is of a PIN structure and comprises a first p-type semiconductor layer, an intrinsic layer and a first n-type semiconductor layer which are sequentially stacked; the first electrode is connected to the first n-type semiconductor layer, and the second electrode is connected to the first p-type semiconductor layer.
Preferably, the first p-type semiconductor layer is a p-type germanium layer, the intrinsic layer is an intrinsic germanium layer, and the first n-type semiconductor layer is an n-type silicon layer.
Preferably, the photoelectric conversion unit is an MSM structure, and includes a first metal layer, a semiconductor layer, and a second metal layer stacked in sequence, the first electrode is connected to the first metal layer, and the second electrode is connected to the second metal layer.
Preferably, the photoelectric conversion unit has an avalanche structure, two poles of the avalanche structure are a second p-type semiconductor layer and a second n-type semiconductor layer, respectively, the first electrode is connected to the second n-type semiconductor layer, and the second electrode is connected to the second p-type semiconductor layer.
Preferably, the substrate layer is made of silicon, and the epitaxial layer is made of silicon dioxide.
Preferably, the photoelectric device is a photodetector, and the photoelectric conversion unit is a light absorption unit.
Preferably, the photoelectric device is an electro-optical modulator, and the photoelectric conversion unit is an optical modulation unit.
Preferably, the second electrode and the third electrode have the same shape, and are both circular or square; the second electrode and the third electrode are made of the same material and are both aluminum.
The invention forms a parallel plate capacitor in the photoelectric device through the second electrode and the third electrode, and applies direct current bias voltage to the first electrode and the second electrode, which is the working voltage of the photoelectric device.
When the photoelectric conversion unit is a light absorption unit, when an optical signal enters the photoelectric device, two ports of the first electrode and the second electrode generate a high-frequency current signal, and the high-frequency current signal can be transmitted to the third electrode to be led out through a parallel plate capacitor formed between the second electrode and the third electrode. The parallel plate capacitor formed between the second electrode and the third electrode has the functions of passing high-frequency and low-frequency, can reduce the current of the low-frequency band and keep the current of the high-frequency band, and has the opposite effect with the pn junction capacitance. According to the definition of the bandwidth, the frequency corresponding to the signal power which is reduced to 1/2 of the maximum value is the bandwidth, so that the bandwidth of the photoelectric device can be effectively improved by reducing the current value of the low frequency band under the condition that the current of the high frequency band is almost unchanged, and the working rate of the photoelectric device is improved.
When the photoelectric conversion unit is an optical modulation unit, a direct current bias voltage is applied to the active region of the photoelectric device through the first electrode and the second electrode, a high-frequency voltage signal is applied to the active region of the photoelectric device through the first electrode and the third electrode, and the high-frequency voltage signal is applied to the active region of the photoelectric device through a parallel plate capacitor formed between the second electrode and the third electrode. The parallel plate capacitor formed between the second electrode and the third electrode has the function of passing high frequency and blocking low frequency, so that the low frequency voltage signal can be suppressed, and the high frequency voltage signal can be maintained. According to the definition of the passband, the frequency corresponding to 1/2 when the signal power is reduced to the maximum value is the passband, so that under the condition that the high-frequency-band voltage signal is almost unchanged, the bandwidth can be expanded to the high-frequency band by reducing the low-frequency-band voltage signal, the bandwidth of the photoelectric device is effectively improved, and the working speed of the photoelectric device is improved.
Drawings
Fig. 1 is a schematic structural view of an optoelectronic device having a capacitor structure in an embodiment.
Fig. 2 is a schematic structural diagram of an optoelectronic device having a capacitor structure in a PIN structure.
Fig. 3 is a schematic structural diagram of a photoelectric device having a capacitor structure in an MSM structure.
Fig. 4 is a schematic view of a photoelectric device having a capacitor structure in an avalanche structure.
Reference numerals: the photoelectric conversion device comprises a substrate layer 1, an epitaxial layer 2, a photoelectric conversion unit 3, a first electrode 4, a second electrode 5, a third electrode 6, a first p-type semiconductor layer 31, an intrinsic layer 32, a first n-type semiconductor layer 33, a first metal layer 34, a semiconductor layer 35, a second metal layer 36, a second p-type semiconductor layer 37 and a second n-type semiconductor layer 38.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more fully described below with reference to the accompanying drawings of the embodiments of the present invention, it is to be understood that the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but is merely representative of selected embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Fig. 1 is a schematic cross-sectional view of an optoelectronic device with a capacitor structure according to the present invention, which includes a substrate layer 1, an epitaxial layer 2, a photoelectric conversion unit 3, a first electrode 4, a second electrode 5, and a third electrode 6.
Wherein, epitaxial layer 2 is arranged on the substrate layer 1.
The photoelectric conversion unit 3 is disposed in the epitaxial layer 2, and is capable of receiving an optical signal to generate an electrical signal, or modulating the optical signal according to the received electrical signal.
A first electrode 4, a second electrode 5 and a third electrode 6 are all arranged in the epitaxial layer 2. The first electrode 4 and the second electrode 5 are connected to both poles of the photoelectric conversion unit 3, respectively. The third electrode 6 is parallel to the second electrode 5 to constitute a parallel plate capacitor. The first electrode 4 is also connected to ground.
The photoelectric device can be a photoelectric detector, and the photoelectric conversion unit 3 is a light absorption unit, and can receive a light signal to generate an electric signal. The photoelectric detector forms a parallel plate capacitor in the photoelectric detector through a second electrode 5 and a third electrode 6, wherein a first electrode 4 is grounded, and direct current bias voltage is applied to the ends of the first electrode 4 and the second electrode 5 to serve as working voltage of the detector. When an optical signal is incident on the photoelectric detector, the two ports of the first electrode 4 and the second electrode 5 generate a high-frequency current signal, and the high-frequency current signal can be transmitted to the third electrode 6 and led out through a parallel plate capacitor formed between the second electrode 5 and the third electrode 6. The parallel plate capacitor formed between the second electrode 5 and the third electrode 6 has the functions of passing high-frequency and low-frequency, can reduce the current of the low-frequency band, keeps the current of the high-frequency band, and has the opposite effect with the pn junction capacitance. According to the definition of the bandwidth, the frequency corresponding to 1/2 when the signal power is reduced to the maximum value is the bandwidth, so that the bandwidth can be effectively increased by reducing the current value of the low frequency band under the condition that the current of the high frequency band is almost unchanged, and the working rate of the photoelectric detector can be increased.
The photoelectric device can also be an electro-optical modulator, and the photoelectric conversion unit 3 is an optical modulation unit and can modulate an optical signal according to a received electric signal. A dc bias voltage is applied to the active area of the electro-optical modulator through the first electrode 4 and the second electrode 5, a high frequency voltage signal is applied to the active area of the electro-optical modulator through the first electrode 4 and the third electrode 6, and the high frequency voltage signal is applied to the active area of the electro-optical modulator through a parallel plate capacitor formed between the second electrode 5 and the third electrode 6. Since the parallel plate capacitor formed between the second electrode 5 and the third electrode 6 has the function of passing high-frequency and low-frequency, it can suppress low-frequency voltage signals and maintain high-frequency voltage signals. According to the definition of the passband, the frequency corresponding to 1/2 when the signal power is reduced to the maximum value is the passband, so that under the condition that the high-frequency-band voltage signal is almost unchanged, the bandwidth can be expanded to the high frequency band by reducing the low-frequency-band voltage signal, the frequency bandwidth of the electro-optical modulator is effectively improved, and the working speed of the electro-optical modulator is improved.
The photoelectric conversion unit 3 can be a PIN structure, an MSM structure or an avalanche structure, and can be used to manufacture a photoelectric device with a capacitor structure, and the purpose of increasing the bandwidth of the photoelectric device and thus increasing the working rate of the photoelectric device can be achieved.
Referring to fig. 2, when the photoelectric conversion unit 3 has a PIN structure, the photoelectric conversion unit 3 includes a first p-type semiconductor layer 31, an intrinsic layer 32, and a first n-type semiconductor layer 33, which are sequentially stacked. The first electrode 4 is connected to the first n-type semiconductor layer 33, and the second electrode 5 is connected to the first p-type semiconductor layer 31. Alternatively, the first p-type semiconductor layer 31 may be a p-type germanium layer, the intrinsic layer 32 may be an intrinsic germanium layer, and the first n-type semiconductor layer 33 may be an n-type silicon layer, which is not limited in this embodiment. Alternatively, the first p-type semiconductor layer 31 may be a p-type silicon layer, the intrinsic layer 32 may be an intrinsic silicon layer, and the first n-type semiconductor layer 33 may be an n-type silicon layer, which is not particularly limited in this embodiment.
Referring to fig. 3, when the photoelectric conversion unit 3 is an MSM structure, the photoelectric conversion unit 3 includes a first metal layer 34, a semiconductor layer 35 and a second metal layer 36 which are sequentially stacked, the first electrode 4 is connected to the first metal layer 34, and the second electrode 5 is connected to the second metal layer 36.
Referring to fig. 4, the photoelectric conversion unit 3 is an avalanche structure, two poles of the avalanche structure are a second p-type semiconductor layer 37 and a second n-type semiconductor layer 38, respectively, the first electrode 4 is connected to the second n-type semiconductor layer 38, and the second electrode 5 is connected to the second p-type semiconductor layer 37.
In any of the above-mentioned PIN structure, MSM structure, or avalanche structure photoelectric devices, the substrate layer 1 may be made of silicon, and the epitaxial layer 2 may be made of silicon dioxide. The silicon has stable property and easy purification, and is suitable for being used as a substrate of a photoelectric device.
One end of each of the first electrode 4, the second electrode 5 and the third electrode 6 may be designed to expose a side of the epitaxial layer 2 away from the substrate layer 1, so as to conduct current and voltage signals.
Optionally, the second electrode 5 and the third electrode 6 have the same shape, are both circular or square, and are symmetrically opposite to each other, so that the area of the opposite surfaces is increased, and the capacitance is increased. The second electrode 5 and the third electrode 6 are made of the same material and are made of aluminum, and the aluminum sheet can be made thinner so as to reduce the volume of the parallel plate capacitor and increase the capacitance.
The electro-optical bandwidth of the photoelectric device is reduced because leakage loss is generated by the potential barrier capacitance and the diffusion capacitance between the pn junctions at high frequency, thereby reducing the output current. In the photoelectric device designed in the above embodiment, by designing the second electrode 5 and the third electrode 6 in parallel, the parallel plate capacitor formed between the second electrode 5 and the third electrode 6 has the function of passing high-frequency and low-frequency, so that the current or voltage signal in the low-frequency band can be reduced, the current or voltage signal in the high-frequency band can be maintained, and the function opposite to the pn junction capacitance can be achieved. The current or voltage signal of the high frequency band is kept by reducing the current or voltage signal of the low frequency band, so that the bandwidth is improved, and the working speed of the photoelectric device is further improved.
While the above is directed to some, but not all embodiments of the invention, the detailed description of the embodiments of the invention is not intended to limit the scope of the invention, which is claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. An optoelectronic device having a capacitive structure, characterized by: comprises that
A substrate layer;
the epitaxial layer is arranged on the substrate layer;
the photoelectric conversion unit is arranged in the epitaxial layer and can receive an optical signal to generate an electric signal or modulate the optical signal according to the received electric signal;
the first electrode, the second electrode and the third electrode are all arranged in the epitaxial layer; the first electrode and the second electrode are respectively connected to two poles of the photoelectric conversion unit; the third electrode is parallel to the second electrode to configure a parallel plate capacitor; the first electrode is also grounded.
2. The optoelectronic device with a capacitive structure according to claim 1, wherein: the photoelectric conversion unit is in a PIN structure, an MSM structure or an avalanche structure.
3. The optoelectronic device with a capacitive structure according to claim 2, wherein: the photoelectric conversion unit is of a PIN structure and comprises a first p-type semiconductor layer, an intrinsic layer and a first n-type semiconductor layer which are sequentially stacked; the first electrode is connected to the first n-type semiconductor layer, and the second electrode is connected to the first p-type semiconductor layer.
4. The optoelectronic device with a capacitive structure according to claim 3, wherein: the first p-type semiconductor layer is a p-type germanium layer, the intrinsic layer is an intrinsic germanium layer, and the first n-type semiconductor layer is an n-type silicon layer.
5. The optoelectronic device with a capacitive structure according to claim 2, wherein: the photoelectric conversion unit is of an MSM structure and comprises a first metal layer, a semiconductor layer and a second metal layer which are sequentially overlapped, the first electrode is connected to the first metal layer, and the second electrode is connected to the second metal layer.
6. The optoelectronic device with a capacitive structure according to claim 2, wherein: the photoelectric conversion unit is of an avalanche structure, two poles of the avalanche structure are a second p-type semiconductor layer and a second n-type semiconductor layer respectively, the first electrode is connected to the second n-type semiconductor layer, and the second electrode is connected to the second p-type semiconductor layer.
7. The photovoltaic device with the capacitor structure as claimed in any one of claims 1 to 6, wherein: the substrate layer is made of silicon, and the epitaxial layer is made of silicon dioxide.
8. The photovoltaic device with the capacitor structure as claimed in any one of claims 1 to 6, wherein: the photoelectric device is a photoelectric detector, and the photoelectric conversion unit is a light absorption unit.
9. The photovoltaic device with the capacitor structure as claimed in any one of claims 1 to 6, wherein: the photoelectric device is an electro-optical modulator, and the photoelectric conversion unit is an optical modulation unit.
10. The optoelectronic device with a capacitive structure according to claim 1, wherein: the second electrode and the third electrode are the same in shape and are both circular or square; the second electrode and the third electrode are made of the same material and are both aluminum.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110653927.5A CN113437097A (en) | 2021-06-11 | 2021-06-11 | Photoelectric device with capacitor structure |
| CN202210549849.9A CN114843289A (en) | 2021-06-11 | 2022-05-20 | Photoelectric device with capacitor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110653927.5A CN113437097A (en) | 2021-06-11 | 2021-06-11 | Photoelectric device with capacitor structure |
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| Publication Number | Publication Date |
|---|---|
| CN113437097A true CN113437097A (en) | 2021-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110653927.5A Withdrawn CN113437097A (en) | 2021-06-11 | 2021-06-11 | Photoelectric device with capacitor structure |
| CN202210549849.9A Pending CN114843289A (en) | 2021-06-11 | 2022-05-20 | Photoelectric device with capacitor structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210549849.9A Pending CN114843289A (en) | 2021-06-11 | 2022-05-20 | Photoelectric device with capacitor structure |
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| CN (2) | CN113437097A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114566490A (en) * | 2022-04-15 | 2022-05-31 | 中国电子科技集团公司第十研究所 | MSM capacitor structure with vertical layout and manufacturing method thereof |
-
2021
- 2021-06-11 CN CN202110653927.5A patent/CN113437097A/en not_active Withdrawn
-
2022
- 2022-05-20 CN CN202210549849.9A patent/CN114843289A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114566490A (en) * | 2022-04-15 | 2022-05-31 | 中国电子科技集团公司第十研究所 | MSM capacitor structure with vertical layout and manufacturing method thereof |
| CN114566490B (en) * | 2022-04-15 | 2023-06-27 | 中国电子科技集团公司第十研究所 | Vertical layout MSM capacitor structure and manufacturing method thereof |
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| Publication number | Publication date |
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| CN114843289A (en) | 2022-08-02 |
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