CN113422296A - Beam combining device, laser processing equipment and laser annealing method - Google Patents

Beam combining device, laser processing equipment and laser annealing method Download PDF

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Publication number
CN113422296A
CN113422296A CN202110552574.XA CN202110552574A CN113422296A CN 113422296 A CN113422296 A CN 113422296A CN 202110552574 A CN202110552574 A CN 202110552574A CN 113422296 A CN113422296 A CN 113422296A
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China
Prior art keywords
semi
light
annular
light beam
combining device
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Chinese (zh)
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刘金彪
罗军
李俊峰
贺晓彬
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to CN202110552574.XA priority Critical patent/CN113422296A/en
Publication of CN113422296A publication Critical patent/CN113422296A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
    • H01S3/2391—Parallel arrangements emitting at different wavelengths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0057—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for temporal shaping, e.g. pulse compression, frequency chirping

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention discloses a beam combining device, laser processing equipment and a laser annealing method, relates to the technical field of laser annealing, and is used for reducing the thermal budget difference between a process area and a non-process area during laser annealing. The beam combining device is used for combining the preheating beams and the process beams with different wavelengths and comprises a beam shaping element and a semi-transmitting and semi-reflecting optical element; the beam shaping element is used for converting the preheating beam into an annular beam and providing the annular beam for the semi-transmitting and semi-reflecting optical element; the semi-transmitting and semi-reflecting optical element is used for reflecting the annular light beam and transmitting the process light beam, so that the annular light beam is sleeved on the process light beam.

Description

Beam combining device, laser processing equipment and laser annealing method
Technical Field
The invention relates to the technical field of laser annealing, in particular to a beam combining device, laser processing equipment and a laser annealing method.
Background
In the laser annealing process, the surface temperature of the laser irradiation area exceeds 1000 ℃, the non-irradiation area is close to the room temperature, and a large temperature gradient exists, namely, the thermal budget difference between the process area and the non-process area is large. Therefore, on one hand, the risk of chipping is easily caused, and on the other hand, the roughness of the boundary between the irradiated area and the unirradiated area is easily increased, and the characteristics of the device are easily influenced.
In the prior art, to solve this problem, a method of mixing two or more laser beams is generally used, in which the beams for process heating are mixed in a uniform preheated beam. Thus, the heating and preheating beams overlap, but this approach does not reduce the thermal budget difference between the process and non-process zones.
Disclosure of Invention
The invention aims to provide a beam combining device, laser processing equipment and a laser annealing method, which are used for reducing the thermal budget difference between a process area and a non-process area during laser annealing.
In a first aspect, the present invention provides a beam combining device. The beam combining device comprises a beam shaping element and a semi-transmitting and semi-reflecting optical element; the beam shaping element is used for converting the preheating beam into an annular beam and providing the annular beam for the semi-transmitting and semi-reflecting optical element; the semi-transmitting and semi-reflecting optical element is used for reflecting the annular light beam and transmitting the heating light beam, so that the annular light beam is sleeved on the process light beam.
According to the technical scheme, the preheating light beam can be converted into the annular light beam by the light beam shaping element, then the annular light beam and the process light beam can be sleeved on the process light beam through the semi-transmitting and semi-reflecting element, namely, the annular light beam surrounds the process light beam without gaps, so that the preheating light beam and the annular light beam are not overlapped, the annular light beam is used for preheating a non-process area, the process light beam is used for processing the process area, and therefore the thermal budget difference between the process area and the non-process area can be reduced.
In a second aspect, the present invention provides a laser processing apparatus comprising at least one beam combining device as described in all possible implementations above.
The advantageous effects of the second aspect and its various implementations in the present invention are the same as those of the first aspect or any possible implementation of the first aspect, and are not described herein again.
In a third aspect, the present invention provides a laser annealing method, which may be applied to at least one beam combining device described in all the above possible implementations, or to at least one laser processing apparatus described in all the above possible implementations, and the laser annealing method includes:
converting the preheating beam into an annular beam by using a beam shaping element, and providing the annular beam to the semi-transmitting and semi-reflecting optical element;
providing a process beam to the transflective optical element;
the semi-transmitting and semi-reflecting optical element is used for reflecting the annular light beam and transmitting the process light beam, so that the annular light beam is sleeved on the process light beam to form a mixed light beam;
and annealing the object to be annealed by using the mixed light beam.
The beneficial effects of the third aspect and its various implementations in the present invention are the same as those of the first aspect or any possible implementation of the first aspect, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic view of a laser annealing apparatus according to an embodiment of the present application;
fig. 2 is a schematic diagram of a beam shaping element according to an embodiment of the present disclosure.
Reference numerals:
1-annealing light source, 2-preheating light source, 3-beam shaping element, 31-light blocking part, 4-semi-transparent semi-reflecting optical element and 5-bearing table.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Because the temperature during laser annealing is higher, the temperature difference between the process area and the non-process area is larger, the risk of fragment is easily caused, and the roughness of the boundary between the irradiation area and the non-irradiation area is easily increased, thereby affecting the characteristics of the device. Thus, in the prior art, the above-mentioned problem is solved by mixing the preheating beam with the process beam, but the preheating beam and the process beam are overlapped, so that the thermal budget difference between the process area and the non-process area is not reduced. The application provides a beam combining device, which is used for combining a preheating beam and a process beam with different wavelengths and can reduce the thermal budget difference between a process area and a non-process area.
Referring to fig. 1, a beam combining apparatus provided in an embodiment of the present invention includes a beam shaping element 3 and a transflective optical element 4. The beam shaping element 3 is used for converting the preheating beam into an annular beam and providing the annular beam to the half-transmitting and half-reflecting optical element 4; the semi-transmitting and semi-reflecting optical element 4 is used for reflecting the annular light beam and transmitting the heating light beam, so that the annular light beam is sleeved on the process light beam.
Through the technical scheme, the beam shaping element 3 can convert the preheating beam into the annular beam, then the annular beam and the process beam can be sleeved on the process beam through the semi-transmitting and semi-reflecting element, namely, the annular beam surrounds the process beam without a gap, so that the preheating beam and the annular beam are not overlapped, the annular beam is used for preheating a non-process area, the process beam is used for processing the process area, and thus the thermal budget difference between the process area and the non-process area can be reduced.
The transflective optical element 4 may be a conventional transflective optical element, or may be a transparent carrier covered with films on two opposite surfaces thereof, for example, the transflective optical element 4 has a first surface and a second surface opposite to each other. The two surfaces can be covered with corresponding films, the annular light beam irradiates on the first surface, the film on the first surface prevents the annular light beam from passing through and reflects the annular light beam, the process light beam irradiates on the second surface, the films on the first surface and the second surface allow the process light beam to pass through, so that the process light beam transmits the semi-transparent and semi-reflective optical element 4, the annular light beam reflected by the first surface can be sleeved outside the process light beam passing through the first surface, and the two light beams are nested together without gaps to form a mixed light beam. In addition, the process beam may be used for laser annealing, and may also be used for etching, which is not limited in this disclosure.
In a possible implementation, the beam-shaping element 3 may be a cut-off filter having a cut-off region having the same shape as the cross-sectional shape of the process beam and capable of preventing the passage of the intermediate portion of the preheating beam, and a pass-band region surrounding the cut-off region and allowing the passage of the preheating beam. In this way, the preheating beam can be converted into an annular beam. Wherein, the cut-off filter is selected according to the wavelength range of the preheating beam, so that the cut-off region can prevent the corresponding part of the preheating beam from passing through, and the pass-band region can allow the corresponding part of the preheating beam to pass through, finally forming the annular beam. Of course, the beam shaping element 3 may be not only a cut-off filter, but also other structures, as long as it can form an annular beam, and the disclosure is not limited thereto.
In another possible implementation, referring to fig. 2, the beam shaping element 3 may have a light-transmitting body and a light blocking portion 31 formed on the light-transmitting body, so that the light-transmitting body may allow the edge portion of the preheated beam to pass through and then continue to propagate, and the light blocking portion 31 may block the middle portion of the preheated beam from continuing to propagate, thereby forming an annular beam. When the preheating beam is rectangular, the light blocking portion 31 is correspondingly rectangular.
In one example, the geometric center of the light blocking portion 31 may be coaxial with the central optical axis of the preheating beam. Therefore, when the preheating light beam is circular, the annular light beam can be formed, so that the preheating light distributed around the process light beam is uniform, and after the preheating light beam finally irradiates on a product, the preheating zone uniformly surrounds the process zone, and the preheating effect is favorably improved. Of course, the geometric center of the light blocking portion 31 may be different from the central optical axis of the preheating beam as long as an annular beam is formed. The light-transmitting body can be made of a high-transmittance quartz material, and has good light transmittance and heat resistance.
In one example, the shape of the light blocking part 31 is the same as the cross-sectional shape of the process beam, the outer diameter of the process beam is d1, the outer diameter of the light blocking part 31 is d2, k is d1-d2, and k ranges from 0 μm to 100 μm. Thus, when K is 0, the hollow part of the annular light beam can be sleeved outside the process light beam, and the annular light beam and the process light beam do not have overlapped parts, so that the thermal budget difference between the process area and the non-process area can be well reduced. However, due to the error, a small area of coincidence of the annular beam and the process beam is allowed, i.e. a coincidence range of 0 to 100 μm in the radial direction is allowed for the annular beam and the process beam when k is greater than 0 to less than 100 μm. It should be noted here that there is no gap between the ring beam and the process beam, regardless of the value of k. In addition, the value of k can be determined according to the cross section size of the process beam, namely, when the cross section size of the process beam is larger, the value of k can be slightly larger; when the cross-sectional dimension of the process beam is small, the value of K may be slightly smaller.
In one example, the central optical axis of the reflected annular beam coincides with the central optical axis of the process beam. Thus, when k is equal to 0, the hollow part of the annular light beam can be just sleeved on the outer side of the process light beam, and no overlapped part exists between the hollow part of the annular light beam and the process light beam; when k is larger than 0 and smaller than 100 mu m, the overlapped part of the two is uniformly distributed on one side of the process light beam, so that the phenomenon that the temperature of the corresponding area on the product is too high due to the overlarge overlapped part on one side is avoided, and the reduction of the thermal budget difference between the process area and the non-process area is not facilitated.
In one example, the light blocking portion 31 is a light blocking film covering the surface of the light transmissive body. The shape of the light-blocking film can be determined according to the shape of the process light beam, so that the preheating light beam can be converted into an annular light beam sleeved on the outer side of the process light beam. For example: the light-blocking film may be a semiconductor thin film. The semiconductor film facilitates sufficient absorption of the preheated light to form an annular beam. For example, the semiconductor thin film may be formed of Si, Ge, Ga, AS, or the like, and the disclosure is not limited thereto.
In one possible implementation, the annular beam may be a beam with a wavelength greater than 532 nm; the process beam may be a beam having a wavelength of less than 132 nm. The mixing of the light beams is performed by the half-mirror 4 by utilizing the difference in the wavelengths of the two light beams.
An embodiment of the present invention provides a laser processing apparatus, which includes at least one beam combining device described in all the above possible implementation manners.
The laser processing equipment can be used for annealing by utilizing laser or etching by utilizing laser. Any apparatus that requires beam mixing to reduce the thermal budget difference between the process and non-process zones may include the beam combining means described above.
When the laser processing equipment is laser annealing equipment, the laser processing equipment comprises a preheating light source 2, an annealing light source 1 and a bearing platform 5. The preheating light source 2 provides preheating light beams to the light beam shaping element 3, the annealing light source 1 provides annealing laser to the semi-transparent and semi-reflective optical element 44, a product to be annealed is placed on the bearing table 5, and the semi-transparent and semi-reflective optical element 44 is arranged opposite to the bearing table 5 and provides mixed light beams to the product to be annealed. The laser annealing equipment can reduce the thermal budget difference between the process area and the non-process area during laser annealing.
An embodiment of the present invention provides a laser annealing method, where the laser annealing method may be applied to at least one beam combining device described in all the above possible implementation manners, or applied to at least one laser processing apparatus described in all the above possible implementation manners, and the laser annealing method includes:
the preheating beam is converted into an annular beam by using the beam shaping element 3, and the annular beam is provided for the semi-transmitting and semi-reflecting optical element 4;
providing a process beam to the transflective optical element 4;
the semi-transmitting and semi-reflecting optical element 4 is used for reflecting the annular light beam and transmitting the process light beam, so that the annular light beam is sleeved on the process light beam to form a mixed light beam;
and annealing the object to be annealed by using the mixed light beam.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The order of providing the process beam and the annular beam to the transflective optical element 4 is not limited, and may be the same or in tandem.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A beam combining device is characterized by being used for combining a preheating beam and a process beam with different wavelengths, and the beam combining device comprises a beam shaping element and a semi-transmitting and semi-reflecting optical element;
the beam shaping element is used for converting the preheating beam into an annular beam and providing the annular beam for the semi-transmitting and semi-reflecting optical element;
the semi-transmitting and semi-reflecting optical element is used for reflecting the annular light beam and transmitting the process light beam, so that the annular light beam is sleeved on the process light beam.
2. The beam combining device of claim 1, wherein the beam shaping element has a light transmissive body and a light blocking portion formed on the light transmissive body.
3. The beam combining device according to claim 2, wherein the shape of the light blocking part is the same as the cross-sectional shape of the process beam, the outer diameter of the process beam is d1, the outer diameter of the light blocking part is d2, k-d 1-d2, and k is in the range of 0-100 μm.
4. The beam combining device of claim 3, wherein the central optical axis of the reflected annular beam coincides with the central optical axis of the process beam.
5. The beam combining device according to claim 2, wherein the light blocking portion is a light blocking film covering a surface of the light transmissive body.
6. The beam combining device according to claim 5, wherein the light blocking film is a semiconductor thin film.
7. The beam combining device of claim 1, wherein the beam shaping element is a cut-off filter having a cut-off region having a shape that is the same as a cross-sectional shape of the process beam and a pass-band region surrounding the cut-off region.
8. The beam combining device according to any one of claims 1 to 7, wherein the ring-shaped light beam is a light beam with a wavelength of more than 532 nm; the process light beam is a light beam with the wavelength less than 132 nm.
9. A laser machining apparatus comprising the beam combining device of any one of claims 1 to 8.
10. A laser annealing method, characterized by being applied to the beam combining device of any one of claims 1 to 8, or to the laser processing equipment of claim 9; the laser annealing method comprises the following steps:
converting the preheating beam into the annular beam by using the beam shaping element, and providing the process beam for the semi-transparent semi-reflective optical element;
the semi-transmitting and semi-reflecting optical element is used for reflecting the annular light beam and transmitting the process light beam, so that the annular light beam is sleeved on the process light beam to form a mixed light beam;
and annealing the object to be annealed by using the mixed light beam.
CN202110552574.XA 2021-05-20 2021-05-20 Beam combining device, laser processing equipment and laser annealing method Pending CN113422296A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103918142A (en) * 2011-10-31 2014-07-09 欧司朗光电半导体有限公司 Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor laser
CN209282608U (en) * 2018-12-06 2019-08-20 西安炬光科技股份有限公司 A kind of light beam closes beam lens, device and Optical Maser System
CN110412769A (en) * 2019-07-12 2019-11-05 武汉锐科光纤激光技术股份有限公司 A kind of fiber laser combiner
CN111856890A (en) * 2020-07-20 2020-10-30 中国科学院长春光学精密机械与物理研究所 Focusing optical system and extreme ultraviolet light generating system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103918142A (en) * 2011-10-31 2014-07-09 欧司朗光电半导体有限公司 Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor laser
CN209282608U (en) * 2018-12-06 2019-08-20 西安炬光科技股份有限公司 A kind of light beam closes beam lens, device and Optical Maser System
CN110412769A (en) * 2019-07-12 2019-11-05 武汉锐科光纤激光技术股份有限公司 A kind of fiber laser combiner
CN111856890A (en) * 2020-07-20 2020-10-30 中国科学院长春光学精密机械与物理研究所 Focusing optical system and extreme ultraviolet light generating system

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